JPH06103589B2 - Method for forming magnetic bubble gate film - Google Patents
Method for forming magnetic bubble gate filmInfo
- Publication number
- JPH06103589B2 JPH06103589B2 JP59038570A JP3857084A JPH06103589B2 JP H06103589 B2 JPH06103589 B2 JP H06103589B2 JP 59038570 A JP59038570 A JP 59038570A JP 3857084 A JP3857084 A JP 3857084A JP H06103589 B2 JPH06103589 B2 JP H06103589B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- garnet
- magnetic bubble
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は磁気バブルガーネツト膜の形成方法に係わり、
特にエピタキシヤル成長法により形成する成膜方法に関
するものである。Description: FIELD OF THE INVENTION The present invention relates to a method for forming a magnetic bubble garnet film,
In particular, the present invention relates to a film forming method for forming by an epitaxial growth method.
一般に磁気バブルメモリ素子において、磁気バブルの媒
体となる磁性膜には、液相エピタキシヤル成長法により
形成されるガーネツト膜が使用される。通常、このエピ
タキシヤル成長法によるガーネツト膜の形成は次のよう
にして行なわれる。すなわち、第１図に示すように縦形
電気炉内に円筒状のヒータ１を設置し、所定の条件に保
持された白金るつぼ２内にガーネツトを構成する元素の
酸化物とフラツクスとを充填し、約1200℃で均質化を行
ない融液３を作製する。この場合、この融液３中のガー
ネツト酸化物の割合は約0.23モルである。次にこの融液
３を約920℃前後の一定温度に保持してガーネツトを過
飽和状態にした後、この融液３中にGd3Ga5O2基板４を浸
漬し、約100r.p.m程度の一定速度で回転し、エピタキシ
ヤル成長を行なう。そして、ガーネツト膜育成終了後、
基板４を融液３が滑らかに流れ落ちるように水平状態か
ら傾けて融液３から引き上げてガーネツト膜を形成して
いた。この場合、この基板４の傾斜角度は経験的に決め
て行なつていた。Generally, in a magnetic bubble memory device, a garnet film formed by a liquid phase epitaxial growth method is used as a magnetic film serving as a medium of a magnetic bubble. Usually, the formation of the garnet film by the epitaxial growth method is performed as follows. That is, as shown in FIG. 1, a cylindrical heater 1 is installed in a vertical electric furnace, and a platinum crucible 2 held under predetermined conditions is filled with oxides and fluxes of elements constituting a garnet, Homogenization is performed at about 1200 ° C. to prepare a melt 3. In this case, the ratio of garnet oxide in the melt 3 is about 0.23 mol. Next, the melt 3 is kept at a constant temperature of about 920 ° C. to make the garnet supersaturated, and then the Gd 3 Ga 5 O 2 substrate 4 is dipped in the melt 3 for about 100 rpm. Rotate at a constant speed to perform epitaxial growth. And after the growth of the garnet film,
The substrate 4 was tilted from the horizontal state so that the melt 3 could flow down smoothly and pulled up from the melt 3 to form a garnet film. In this case, the inclination angle of the substrate 4 has been empirically determined.
しかしながら、このような基板４の引き上げ方法による
と、成膜されたガーネツト膜に融液残留による膜欠陥が
生じ、膜均一性が得られないという問題があつた。However, according to such a method of pulling up the substrate 4, there is a problem that a film defect occurs due to the melt remaining in the formed garnet film, and film uniformity cannot be obtained.
したがつて本発明は、融液残留による膜欠陥の発生を低
減させ、膜均一性の高いガーネツト膜が得られる磁気バ
ブルガーネツト膜の形成方法を提供することを目的とし
ている。Therefore, it is an object of the present invention to provide a method for forming a magnetic bubble garnet film, which can reduce the occurrence of film defects due to residual melt and obtain a garnet film with high film uniformity.
このような目的を達成するために本発明は、ガーネツト
膜育成後、基板の融液からの引き上げ傾斜角度を低角度
に設定するものである。In order to achieve such an object, the present invention sets the inclination angle of pulling up the substrate from the melt after growing the garnet film to a low angle.
次に、第１図を用いて本発明を実施例を詳細に説明す
る。Next, an embodiment of the present invention will be described in detail with reference to FIG.
まず、発明者等らは、基板４上にガーネツト膜育成終了
後、融液３から基板４を引き上げる際、基板４の水平面
からの傾斜角度を０度から25度までの範囲で種々変化さ
せて融液残留欠陥数および膜特性のばらつきをそれぞれ
調べた結果、第２図にそれぞれ示すように特性Ｉおよび
特性IIで示すようなデータが得られた。すなわち、同図
において、特性Ｉで示すように基板４水平面からの傾斜
角度を約６度以上とすることにより、融液残留欠陥の少
ないガーネツト膜が得られた。また、特性IIに示すよう
にその傾斜角度を約15度以下とすることにより、膜均一
性の良好なガーネツト膜が得られた。したがつて、本発
明は基板４の水平面からの引き上げ傾斜角度を６度から
15度の範囲に設定して液相エピタキシヤル成長を行なう
ことにより、融液残留欠陥の少ない均一性の良好なガー
ネツト膜を形成することができる。First, the inventors of the present invention, after pulling up the substrate 4 from the melt 3 after the growth of the garnet film on the substrate 4, variously change the inclination angle of the substrate 4 from the horizontal plane within the range of 0 degree to 25 degrees. As a result of investigating the variations in the number of residual defects in the melt and the film characteristics, the data shown by the characteristics I and II as shown in FIG. 2 were obtained. That is, in the same figure, as shown by the characteristic I, the garnet film with few melt residual defects was obtained by setting the inclination angle from the horizontal plane of the substrate 4 to about 6 degrees or more. Further, as shown in Characteristic II, by setting the inclination angle to about 15 degrees or less, a garnet film having good film uniformity was obtained. Therefore, according to the present invention, the inclination angle of pulling up the substrate 4 from the horizontal plane is from 6 degrees.
By performing liquid phase epitaxial growth in the range of 15 degrees, it is possible to form a garnet film with few melt residual defects and good uniformity.
以上説明したように本発明によれば、融液残留欠陥の少
ない均一性の高い磁性膜が得られるので、品質，信頼性
の高い磁気バブルメモリ素子が得られるなどの極めて優
れた効果を有する。As described above, according to the present invention, since a highly uniform magnetic film with few melt residual defects can be obtained, there is an extremely excellent effect such that a magnetic bubble memory device with high quality and reliability can be obtained.
第１図は液相エピタキシヤル成長法によるガーネツト膜
の育成方法を説明する図、第２図は本発明による磁気バ
ブルガーネツト膜の形成方法に係わる液相エピタキシヤ
ル時の基板の水平面からの引き上げ傾斜角度に対する融
液残留欠陥ならびに膜特性のばらつきの関係を示す特性
図である。 １……ヒータ、２……るつぼ、３……融液、４……基
板。FIG. 1 is a diagram for explaining a method for growing a garnet film by a liquid phase epitaxial growth method, and FIG. 2 is a method for pulling up a substrate from a horizontal plane at the time of liquid phase epitaxy according to a method for forming a magnetic bubble garnet film according to the present invention. It is a characteristic view which shows the relationship of the melt residual defect and the dispersion | variation of a film characteristic with respect to an inclination angle. 1 ... Heater, 2 ... Crucible, 3 ... Melt, 4 ... Substrate.
フロントページの続き (72)発明者 中山 晃 千葉県茂原市早野3300番地 株式会社日立 製作所茂原工場内 (72)発明者 野沢 悠夫 千葉県茂原市早野3300番地 株式会社日立 製作所茂原工場内 (72)発明者 西田 秀来 千葉県茂原市早野3300番地 株式会社日立 製作所茂原工場内 (56)参考文献 特開 昭55−33087（ＪＰ，Ａ) 特開 昭50−104398（ＪＰ，Ａ)Front page continued (72) Inventor Akira Nakayama 3300 Hayano, Mobara-shi, Chiba Hitachi Mobara factory (72) Inventor Yuo Nozawa 3300 Haya, Mobara-shi, Chiba Hitachi Ltd. Mobara factory (72) Invention Hideda Nishida 3300 Hayano, Mobara-shi, Chiba Inside the Mobara factory, Hitachi Ltd. (56) References JP-A-55-33087 (JP, A) JP-A-50-104398 (JP, A)
Claims (1)
を浸漬し液相エピタキシヤル成長法により該基板上にガ
ーネット膜を育成させる磁気バブルガーネット膜の形成
方法において、前記基板が水平な状態でガーネット膜を
育成し、前記ガーネット膜育成後、前記基板を水平状態
から、水平面に対して６度ないし15度の範囲に傾斜させ
た後、前記基板を水平面に対して６度ないし15度の範囲
の傾斜角度を保持して引き上げることを特徴とした磁気
バブルガーネット膜の形成方法。1. A method for forming a magnetic bubble garnet film in which a substrate is immersed in a melt containing at least garnet and a garnet film is grown on the substrate by a liquid phase epitaxial growth method, wherein the garnet is in a horizontal state. After growing a film and growing the garnet film, the substrate is tilted from a horizontal state to a range of 6 to 15 degrees with respect to the horizontal plane, and then the substrate is tilted to a range of 6 to 15 degrees with respect to the horizontal plane. A method for forming a magnetic bubble garnet film, which comprises pulling up while maintaining an inclination angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59038570A JPH06103589B2 (en) | 1984-03-02 | 1984-03-02 | Method for forming magnetic bubble gate film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59038570A JPH06103589B2 (en) | 1984-03-02 | 1984-03-02 | Method for forming magnetic bubble gate film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60185287A JPS60185287A (en) | 1985-09-20 |
| JPH06103589B2 true JPH06103589B2 (en) | 1994-12-14 |
Family
ID=12528949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59038570A Expired - Lifetime JPH06103589B2 (en) | 1984-03-02 | 1984-03-02 | Method for forming magnetic bubble gate film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06103589B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333157B2 (en) * | 1974-01-25 | 1978-09-12 | ||
| US4190683A (en) * | 1978-08-28 | 1980-02-26 | International Business Machines Corporation | Method for forming a liquid phase epitaxial film on a wafer |
-
1984
- 1984-03-02 JP JP59038570A patent/JPH06103589B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60185287A (en) | 1985-09-20 |
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