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JPH06103697B2 - Compact IC wire bonding structure - Google Patents
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JPH06103697B2 - Compact IC wire bonding structure - Google Patents

Compact IC wire bonding structure

Info

Publication number
JPH06103697B2
JPH06103697B2 JP63157400A JP15740088A JPH06103697B2 JP H06103697 B2 JPH06103697 B2 JP H06103697B2 JP 63157400 A JP63157400 A JP 63157400A JP 15740088 A JP15740088 A JP 15740088A JP H06103697 B2 JPH06103697 B2 JP H06103697B2
Authority
JP
Japan
Prior art keywords
bonding
pad
wire
connection point
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63157400A
Other languages
Japanese (ja)
Other versions
JPH027446A (en
Inventor
章 秋沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63157400A priority Critical patent/JPH06103697B2/en
Publication of JPH027446A publication Critical patent/JPH027446A/en
Publication of JPH06103697B2 publication Critical patent/JPH06103697B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明はコンパクトICのワイヤボンディング構造体に関
し、特に、配線基板と外部リードとを２ワイヤを使用し
てネールヘッド金ワイヤボンディングで接続するのに好
適のワイヤボンディング構造体に関する。Description: FIELD OF THE INVENTION The present invention relates to a wire bonding structure for a compact IC, and more particularly, to connecting a wiring board and external leads by two wires using nail head gold wire bonding. The present invention relates to a wire bonding structure suitable for.

［従来の技術］ 従来、ネールヘッド金ワイヤボンディングにより、配線
基板の同一ボンディングパッドから２ワイヤを使用して
外部リードの同一ボンディングパッドへボンディング接
続する場合は、第４図に示すように２ワイヤ４のいずれ
も配線基板１側のボンディングパッド２にボールボンデ
ィング接続点4aを設け、外部リード側のボンディングパ
ット３にステッチボンディング接続点4bを設けている。[Prior Art] Conventionally, in the case of performing the bonding connection from the same bonding pad of the wiring board to the same bonding pad of the external lead by the nail head gold wire bonding, as shown in FIG. In both cases, a ball bonding connection point 4a is provided on the bonding pad 2 on the wiring board 1 side, and a stitch bonding connection point 4b is provided on the bonding pad 3 on the external lead side.

［発明が解決しようとする課題］ しかしながら、上述した従来のワイヤボンディング構造
体の場合は、配線基板と外部リードとを接続する２ワイ
ヤ４のいずれも配線基板側にボールボンディング接続点
4aを設け、外部リード側にステッチボンディング接続点
4bを設けたボンディングワイヤ構造となっているため、
ボンディング接続されたワイヤ４の張り形状及び接続点
の構造が２ワイヤ４について同一である。このため、ワ
イヤ４が半導体装置の製造工程中等において、熱的及び
機械的ストレスを受けた場合に、これらのストレスに対
する耐力は２ワイヤ４とも同等である。従って、断線す
る場合は、２ワイヤ４が同時に切断されるという問題点
がある。[Problems to be Solved by the Invention] However, in the case of the above-described conventional wire bonding structure, both of the two wires 4 connecting the wiring board and the external leads are connected to the wiring board by ball bonding connection points.
4a is provided, and the stitch bonding connection point is on the external lead side.
Because it has a bonding wire structure with 4b,
The tension shape of the wire 4 connected by bonding and the structure of the connection point are the same for the two wires 4. Therefore, when the wire 4 is subjected to thermal and mechanical stress during the manufacturing process of the semiconductor device or the like, the proof stress against these stresses is the same as that of the two wires 4. Therefore, in the case of disconnection, there is a problem that the two wires 4 are simultaneously disconnected.

本発明はかかる問題点に鑑みてなされたものであって、
熱的及び機械的ストレスを分散させることができ、半導
体装置製造工程におけるワイヤ断線を低減することがで
きるコンパクトICのワイヤボンディング構造体に関す
る。The present invention has been made in view of such problems,
The present invention relates to a wire bonding structure for a compact IC capable of dispersing thermal and mechanical stress and reducing wire breakage in a semiconductor device manufacturing process.

［課題を解決するための手段］ 本発明に係るコンパクトICのワイヤボンディング構造体
は、コンパクトICの配線基板側ボンディングパッドと外
部リード側ボンディングパッドとを２ワイヤにより接続
するコンパクトICのワイヤボンディング構造体におい
て、前記ワイヤの一方は配線基板側ボンディングパッド
及び外部リード側ボンディングパッドに夫々ボールボン
ディング接続点及びステッチボンディング接続点を有
し、他方の前記ワイヤは前記配線基板側ボンディングパ
ッド及び前記外部リード側ボンディングパッドに夫々ス
テッチボンディング接続点及びボールボンディング接続
点を有することを特徴とする。[Means for Solving the Problems] A wire bonding structure for a compact IC according to the present invention is a wire bonding structure for a compact IC in which a wiring board side bonding pad and an external lead side bonding pad of the compact IC are connected by two wires. , One of the wires has a ball bonding connection point and a stitch bonding connection point on a wiring board side bonding pad and an external lead side bonding pad, respectively, and the other wire has the wiring board side bonding pad and the external lead side bonding point. The pad is characterized by having a stitch bonding connection point and a ball bonding connection point, respectively.

［作用］ 本発明においては、配線基板側のパッドにボールボンデ
ィング接続点とステッチボンディング接続点とを設け、
外部リード側のパッドにも同様にボールボンディング接
続点とステッチボンディング接続点とを設けてある。そ
して、一方のパッドのボール及びステッチボンディング
接続点と他方のパッドの夫々ステッチ及びボールボンデ
ィング接続点とを夫々ワイヤにより接続してある。[Operation] In the present invention, the ball bonding connection point and the stitch bonding connection point are provided on the pad on the wiring board side,
Similarly, the pads on the external lead side are also provided with ball bonding connection points and stitch bonding connection points. The ball and stitch bonding connection points on one pad and the stitch and ball bonding connection points on the other pad are connected by wires.

このように、配線基板側及び外部リード側の双方にボー
ル及びステッチボンディング接続点を設けた２ワイヤで
接続することにより、製造工程で熱的及び機械的ストレ
スが印加されても、このストレスはボンディング接続構
造が異なる２ワイヤに分散される。これにより、ワイヤ
断線不良の発生を低減できる。In this way, by connecting with the two wires having the ball and the stitch bonding connection points on both the wiring board side and the external lead side, even if thermal and mechanical stress is applied in the manufacturing process, this stress is bonded. It is distributed over two wires with different connection structures. This can reduce the occurrence of wire disconnection defects.

［実施例］ 次に、本発明の実施例について添付の図面を参照して説
明する。第１図は本発明の第１の実施例を示す平面図、
第２図は同じくそのII−II線による縦断面図である。配
線基板１側のボンディングパッド２と、外部リード側の
ボンディングパッド３との間に、２本のワイヤ6,7が配
設されている。ボンディングワイヤ６は配線基板側ボン
ディングパッド２にボールボンディング接続点6aにより
接続され、外部リード側ボンディングパッド３にステッ
チボンディング接続点6bにより接続されている。一方、
ボンディングワイヤ７は配線基板側ボンディングパッド
２にステッチボンディング接続点7bにより接続され、外
部リード側ボンディングパッド３にボールボンディング
接続点7aにより接続されている。[Embodiment] Next, an embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a plan view showing a first embodiment of the present invention,
FIG. 2 is a vertical sectional view taken along the line II-II of FIG. Two wires 6 and 7 are arranged between the bonding pad 2 on the wiring board 1 side and the bonding pad 3 on the external lead side. The bonding wire 6 is connected to the wiring board side bonding pad 2 by a ball bonding connection point 6a and connected to the external lead side bonding pad 3 by a stitch bonding connection point 6b. on the other hand,
The bonding wire 7 is connected to the wiring board side bonding pad 2 by the stitch bonding connection point 7b and connected to the external lead side bonding pad 3 by the ball bonding connection point 7a.

このようなワイヤボンディング構造を有するため、半導
体装置の製造工程で熱的・機械的ストレスを受けた場合
に、ボンディング接続構造が異なる２ワイヤ6,7にこれ
らのストレスを分散させることができ、製造工程中のワ
イヤ断線等の発生を低減することができる。With such a wire bonding structure, when the semiconductor device manufacturing process is subjected to thermal and mechanical stress, these stresses can be distributed to the two wires 6 and 7 having different bonding connection structures. It is possible to reduce the occurrence of wire breakage during the process.

第３図は本発明の第２の実施例を示す平面図である。第
３図において、第１図と同一物には同一符号を付して説
明を省略する。この実施例は第１の実施例に対し、配線
基板１側のボンディングパッド２と、外部リード側ボン
ディングパッド３との相対的配置関係及びそのパッド内
のボンディング接続点の位置を変更した点が異なる。FIG. 3 is a plan view showing a second embodiment of the present invention. In FIG. 3, the same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. This embodiment is different from the first embodiment in that the relative arrangement relationship between the bonding pad 2 on the wiring substrate 1 side and the external lead side bonding pad 3 and the position of the bonding connection point in the pad are changed. .

これにより、ボールボンディング接続点6a,7a及びステ
ッチボンディング接続点6b,7bにより接続されたボンデ
ィングワイヤ16,17はその長さが相互に異なる。As a result, the bonding wires 16 and 17 connected by the ball bonding connection points 6a and 7a and the stitch bonding connection points 6b and 7b have different lengths.

また、各ボンディングパッド2,3内において、ボンディ
ング接続点の位置がワイヤ16のボンディング接続点6a,6
bと夫々ワイヤ17のボンディング接続点7b,7aとで異な
る。In each of the bonding pads 2 and 3, the position of the bonding connection point is the bonding connection point 6a, 6a of the wire 16.
b and the bonding connection points 7b and 7a of the wire 17 are different.

このような構造により、各ワイヤ16,17に印加される熱
的及び機械的ストレスを更に一層分散させることができ
る。With such a structure, the thermal and mechanical stress applied to the wires 16 and 17 can be further dispersed.

［発明の効果］ 以上説明したように、本発明は配線基板側の１個のボン
ディングパッドと外部リード側の１個のボンディングパ
ッドとの間を、一方のパッドにボールボンディング接続
し、他方のパッドにステッチボンディング接続した構造
のワイヤと、逆に一方のパッドにステッチボンディング
接続し、他方のパッドにボールボンディング接続した構
造のワイヤとで接続することにより、半導体装置製造工
程で受ける熱的・機械的ストレスをボンディング接続構
造が異なる２ワイヤに分散させることでき、製造工程中
のワイヤ断線不良を低減できるという効果を奏する。EFFECTS OF THE INVENTION As described above, according to the present invention, one bonding pad on the wiring board side and one bonding pad on the external lead side are ball-bonded to one pad and the other pad. By connecting the wire with the structure that is stitch-bonded to and the wire with the structure that is stitch-bonded to one pad and ball-bonded to the other pad, the thermal / mechanical process It is possible to disperse the stress to two wires having different bonding connection structures, and it is possible to reduce wire disconnection defects during the manufacturing process.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明の第１の実施例を示す平面図、第２図は
第１図のII−II線による断面図、第３図は本発明の第２
の実施例を示す平面図、第４図は従来のコンパクトICの
ワイヤボンディング構造を示す平面図である。 1;配線基板、2;配線基板側ボンディングパッド、3;外部
リード側ボンディングパッド、4,6,7;ワイヤ、4a,6a,7
a;ボールボンディング接続点、4b,6b,7b;ステッチボン
ディング接続点1 is a plan view showing a first embodiment of the present invention, FIG. 2 is a sectional view taken along line II-II of FIG. 1, and FIG. 3 is a second view of the present invention.
And FIG. 4 is a plan view showing a wire bonding structure of a conventional compact IC. 1; wiring board, 2; wiring board side bonding pad, 3; external lead side bonding pad, 4, 6, 7; wire, 4a, 6a, 7
a; Ball bonding connection point, 4b, 6b, 7b; Stitch bonding connection point

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】コンパクトICの配線基板側ボンディングパ
ッドと外部リード側ボンディングパッドとを２ワイヤに
より接続するコンパクトICのワイヤボンディング構造体
において、前記ワイヤの一方は配線基板側ボンディング
パッド及び外部リード側ボンディングパッドに夫々ボー
ルボンディング接続点及びステッチボンディング接続点
を有し、他方の前記ワイヤは前記配線基板側ボンディン
グパッド及び前記外部リード側ボンディングパッドに夫
々ステッチボンディング接続点及びボールボンディング
接続点を有することを特徴とするコンパクトICのワイヤ
ボンディング構造体。1. A wire bonding structure for a compact IC in which a wiring board side bonding pad of a compact IC and an external lead side bonding pad are connected by two wires, one of the wires being a wiring board side bonding pad and an external lead side bonding. The pad has a ball bonding connection point and a stitch bonding connection point, respectively, and the other wire has a stitch bonding connection point and a ball bonding connection point on the wiring board side bonding pad and the external lead side bonding pad, respectively. Wire bonding structure for compact ICs.
JP63157400A 1988-06-25 1988-06-25 Compact IC wire bonding structure Expired - Lifetime JPH06103697B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63157400A JPH06103697B2 (en) 1988-06-25 1988-06-25 Compact IC wire bonding structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63157400A JPH06103697B2 (en) 1988-06-25 1988-06-25 Compact IC wire bonding structure

Publications (2)

Publication Number Publication Date
JPH027446A JPH027446A (en) 1990-01-11
JPH06103697B2 true JPH06103697B2 (en) 1994-12-14

Family

ID=15648806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63157400A Expired - Lifetime JPH06103697B2 (en) 1988-06-25 1988-06-25 Compact IC wire bonding structure

Country Status (1)

Country Link
JP (1) JPH06103697B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5683403B2 (en) * 2011-08-01 2015-03-11 日立オートモティブシステムズ株式会社 Semiconductor device
JP6196092B2 (en) * 2013-07-30 2017-09-13 ルネサスエレクトロニクス株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPH027446A (en) 1990-01-11

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