JPH06105801B2 - Thick film semiconductor device - Google Patents
Thick film semiconductor deviceInfo
- Publication number
- JPH06105801B2 JPH06105801B2 JP59052824A JP5282484A JPH06105801B2 JP H06105801 B2 JPH06105801 B2 JP H06105801B2 JP 59052824 A JP59052824 A JP 59052824A JP 5282484 A JP5282484 A JP 5282484A JP H06105801 B2 JPH06105801 B2 JP H06105801B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- semiconductor
- thick film
- hall
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000000843 powder Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】 本発明は、ホール素子などの磁電変換素子として利用し
得る、InSbを用いた厚膜半導体デバイスに関する。The present invention relates to a thick film semiconductor device using InSb that can be used as a magnetoelectric conversion element such as a Hall element.
一般に、ホール素子などの磁電変換素子は、InSb,GaAs
などのIII−Ｖ族化合物半導体、あるいはSi,Geなどの元
素半導体を用いて構成されているが、電子移動度μが大
きいという理由で、III−Ｖ族化合物半導体が多く用い
られている。このIII−Ｖ族化合物半導体の中では、InS
bが、磁電変換素子としての感度がGaAsなどに比較して
大きいため、最も広く利用されている。このInSbを用い
た磁電変換素子は、通常、次のいずれかの方法で作製さ
れている。In general, magnetoelectric conversion elements such as Hall elements are InSb, GaAs
And the like, or element semiconductors such as Si and Ge. However, III-V group compound semiconductors are often used because of their high electron mobility μ. Among the III-V group compound semiconductors, InS
b is most widely used because its sensitivity as a magnetoelectric conversion element is higher than that of GaAs. The magnetoelectric conversion element using InSb is usually manufactured by any of the following methods.
単結晶半導体を数ミクロン程度の厚さにまで研磨し、
フオトリソグラフイ技術などを用いてパターニングして
素子化する。Polish a single crystal semiconductor to a thickness of a few microns,
A device is formed by patterning using photolithography technology or the like.
真空蒸着などによつて絶縁基板上に半導体薄膜を形成
し、さらに熱処理を施し、電子移動度の比較的大きな多
結晶膜にして素子化する。A semiconductor thin film is formed on an insulating substrate by vacuum vapor deposition or the like, and further heat-treated to form a polycrystalline film having a relatively high electron mobility into a device.
ところが、の方法では、半導体素材の大部分が切断あ
るいは研磨などで失なわれ、素材利用効率が極端に低
く、また、基板への半導体素子の接着など自動化が困難
である工程が含まれている。さらに、数ミクロン程度の
薄層の素子に対して機械的な加工を加えているため、破
損が生じやすく、良品率が極端に低いという欠点もあ
る。However, in the method (1), most of the semiconductor material is lost by cutting or polishing, so that the material utilization efficiency is extremely low, and there is a step that is difficult to automate, such as bonding a semiconductor element to a substrate. . Further, since mechanical processing is applied to a thin layer element having a thickness of about several microns, there is a drawback that breakage easily occurs and the yield rate is extremely low.
の方法では、蒸着過程およびその後に続く熱処理時
に、蒸気圧の高いＶ族元素のSbが抜けて組成変動が生じ
やすく、感度の高い素子を特性のバラツキなしに得るの
が極めて困難である。In the above method, during the vapor deposition process and the subsequent heat treatment, Sb of the V-group element having a high vapor pressure is likely to escape to cause compositional variation, and it is extremely difficult to obtain a highly sensitive element without variation in characteristics.
上述した欠点を除去し、製法の簡単化とコストダウンを
実現する一手段として、印刷厚膜技術によるホール素子
形成法も提案されているが、基板と半導体素子層の間に
補助層を介在させなければ鳴らないなど実用上の問題が
あり、いまだ実用化されていない。As a means for eliminating the above-mentioned drawbacks and simplifying the manufacturing method and realizing cost reduction, a Hall element forming method using a printed thick film technology has been proposed, but an auxiliary layer is interposed between the substrate and the semiconductor element layer. If it does not sound, there is a problem in practical use, and it has not been put to practical use.
そこで本発明は、製造が容易で、しかも、ホール素子な
どの磁電変換素子として用いた場合、感度ならびに他の
諸特性がすぐれた厚膜半導体デバイスを提供することを
目的とし、その要旨は、InとSbからなる化合物半導体ま
たはIn Sbを主成分とする化合物半導体の粉末に、III族
金属の粉末を混合して形成される半導体ペーストを、基
板上に所定形状で直接印刷したことにある。Therefore, the present invention has an object to provide a thick film semiconductor device which is easy to manufacture and has excellent sensitivity and various other characteristics when used as a magnetoelectric conversion element such as a Hall element. That is, a semiconductor paste formed by mixing a powder of a Group III metal with a powder of a compound semiconductor containing Sb or Sb or a compound semiconductor containing In Sb as a main component is directly printed in a predetermined shape on a substrate.
以下、本発明の実施例をホール素子を例にとつて詳述す
る。Hereinafter, an embodiment of the present invention will be described in detail by taking a Hall element as an example.
高純度のIn Sb片をメノウ乳鉢に入れ、ライカイ機で粒
径５μｍ以下に粉砕し、さらに、後述する所定比率でも
つてIn粉末を加えて粉砕、混合した。この混合粉末に有
機バインダ（プロピレングリコール，α−テルピネオー
ルなど）を混合、混練してペースト状にした。これを印
刷ペーストとしてアルミナ基板上にホール素子の形状で
直接印刷した。素子寸法は、長さ（電流端子間距離）15
mm、幅（ホール電圧端子間距離）3mmとした。この後、
還元雰囲気（窒素ガス80％と水素ガス20％の混合気）中
で乾燥後、同一雰囲気中で昇温し、490〜510℃で10分間
〜１時間焼結を行ない、室温まで冷却した。この後、In
を蒸着して電極を形成し、厚膜ホール素子を得た。High-purity In Sb pieces were placed in an agate mortar, crushed to a particle size of 5 μm or less with a liquor machine, and further, In powder was added at a predetermined ratio described below and crushed and mixed. An organic binder (propylene glycol, α-terpineol, etc.) was mixed with this mixed powder and kneaded to form a paste. This was used as a printing paste and directly printed in the shape of a Hall element on an alumina substrate. Element dimensions are length (distance between current terminals) 15
mm, width (distance between hall voltage terminals) 3 mm. After this,
After drying in a reducing atmosphere (a mixture of nitrogen gas 80% and hydrogen gas 20%), the temperature was raised in the same atmosphere, sintering was performed at 490 to 510 ° C. for 10 minutes to 1 hour, and then cooled to room temperature. After this, In
Was evaporated to form an electrode, and a thick film Hall element was obtained.
In Sb粉末とIn粉末の配合比を種々変えてホール素子の
諸特性を測定したところ、第１表のような結果が得られ
た。ホール電圧の測定は、磁束密度1KG、制御電流10mA
の定電流法で行なつた。なお、焼結後の半導体層の厚さ
はいずれも20μｍで均一になるように設定した。When the characteristics of the Hall element were measured by changing the compounding ratio of the In Sb powder and the In powder, the results shown in Table 1 were obtained. Hall voltage is measured by magnetic flux density 1KG, control current 10mA
The constant current method was used. The thickness of the semiconductor layer after sintering was set to be 20 μm and uniform.
なお、Inの添加量を0.5重量％未満にすると、半導体焼
結膜の基板に対する付着強度が極端に弱くなり、実用的
な強度が得られなかつた。また、Inを20重量％を越えて
多量に添加すると、ホール係数RH,電子移動度μＨとも
に極端に小さくなり、実用的なホール電圧VHが得られな
かつた。 When the amount of In added was less than 0.5% by weight, the adhesive strength of the semiconductor sintered film to the substrate was extremely weak, and practical strength could not be obtained. Further, when In was added in a large amount exceeding 20% by weight, both the Hall coefficient RH and the electron mobility μH became extremely small, and a practical Hall voltage VH could not be obtained.
したがつて、In SbとInの好ましい配合比率はIn Sbが8
0.0〜99.5重量％、Inが0.5〜20.0重量％である。Therefore, the preferred mixing ratio of In Sb and In is 8 for In Sb.
0.0-99.5% by weight, In is 0.5-20.0% by weight.
〔実施例２〕 高純度のIn Sb片をメノウ乳鉢に入れ、ライカイ機で粒
径５μｍ以下に粉砕し、さらに、後述する所定比率でも
つてGa粉末を加えて粉砕、混合した。この混合粉末に有
機バインダを混合、混練してペースト状にし、これを印
刷ペーストとして実施例１と同様の方法でホール素子を
得た。[Example 2] High-purity In Sb pieces were placed in an agate mortar, crushed to a particle size of 5 µm or less by a liquor machine, and further Ga powder was added at a predetermined ratio described later and crushed and mixed. An organic binder was mixed with this mixed powder and kneaded to form a paste, which was used as a printing paste to obtain a Hall element in the same manner as in Example 1.
In Sb粉末とGa粉末の配合比を種々変え、実施例１と同
様の測定方法でホール素子の諸特性を測定したところ第
２表のような結果が得られた。Various characteristics of the Hall element were measured by the same measuring method as in Example 1 while changing the compounding ratio of the In Sb powder and the Ga powder variously, and the results shown in Table 2 were obtained.
なお、Gaの添加量を0.5重量％未満にすると、半導体焼
結膜の基板に対する付着強度が極端に弱くなり、実用的
な強度が得られなかつた。また、Gaを15重量％を越えて
多量に添加すると、ホール係数RH、電子移動度μＨとも
に極端に小さくなり、実用的なホール電圧が得られなか
つた。 When the amount of Ga added was less than 0.5% by weight, the adhesive strength of the semiconductor sintered film to the substrate was extremely weak, and practical strength could not be obtained. Further, when Ga was added in a large amount exceeding 15% by weight, both the Hall coefficient RH and the electron mobility μH became extremely small, and a practical Hall voltage could not be obtained.
したがつて、In SbとGaの好ましい配合比率は、In Sbが
85.0〜99.5重量％、Gaが0.5〜15.0重量％である。Therefore, the preferred compounding ratio of In Sb and Ga is In Sb
It is 85.0-99.5% by weight and Ga is 0.5-15.0% by weight.
〔実施例３〕 高純度のInxGa1-xSb片をメノウ乳鉢に入れ、ライカイ機
で粒径５μｍ以下に粉砕し、さらに、InxGa1-xSbが95.0
重量％、Inが5.0重量％の配合比率でもつてIn粉末を加
えて粉砕、混合した。この混合粉末に有機バインダを混
合、混練してペースト状にし、これを印刷ペーストとし
て実施例１と同様の方法でホール素子を得た。[Example 3] High-purity In x Ga 1-x Sb pieces were placed in an agate mortar and crushed to a particle size of 5 µm or less with a raikai machine, and further, In x Ga 1-x Sb 95.0 was added.
In powder was added with a blending ratio of wt% and In of 5.0 wt%, pulverized and mixed. An organic binder was mixed with this mixed powder and kneaded to form a paste, which was used as a printing paste to obtain a Hall element in the same manner as in Example 1.
InxGa1-xSbにおけるｘの値を種々変え、実施例１と同様
の測定方法でホール素子の諸特性を測定したところ第３
表のような結果が得られた。Various values of x in In x Ga 1-x Sb were changed, and various characteristics of the Hall element were measured by the same measurement method as in Example 1.
The results shown in the table were obtained.
〔実施例４〕 高純度のInxGa1-xSb片をメノウ乳鉢に入れ、ライカイ機
で粒径５μｍ以下に粉砕し、さらに、InxGa1-xSbが95.0
重量％、Gaが5.0重量％の配合比率でもつてGa粉末を加
えて粉砕、混合した。この混合粉末に有機バインダを混
合、混練してペースト状にし、これを印刷ペーストとし
て実施例１と同様の方法でホール素子を得た。 The Example 4 High-purity In x Ga 1-x Sb piece placed in an agate mortar, and ground to less particle size 5μm in a chaser mill, and further, In x Ga 1-x Sb 95.0
The Ga powder was added and pulverized and mixed at a compounding ratio of wt% and Ga of 5.0 wt%. An organic binder was mixed with this mixed powder and kneaded to form a paste, which was used as a printing paste to obtain a Hall element in the same manner as in Example 1.
InxGa1-xSbにおけるｘの値を種々変え、実施例１と同様
の測定方法でホール素子の諸特定を測定したところ第４
表のような結果が得られた。When various values of x in In x Ga 1-x Sb were variously changed and various kinds of Hall elements were measured by the same measurement method as in Example 1, the result was No. 4.
The results shown in the table were obtained.
本発明は、以上説明したように、In Sb化合物半導体ま
たはIn Sbを主成分とする化合物半導体の粉末に、In,Ga
などのIII族金属の粉末を混合して形成される半導体ペ
ーストを、基板上に所定形状で印刷してなるので、次の
ような効果が同時に得られる。 As described above, the present invention provides a powder of In Sb compound semiconductor or a compound semiconductor containing In Sb as a main component with In, Ga
Since the semiconductor paste formed by mixing the powder of the group III metal as described above is printed in a predetermined shape on the substrate, the following effects can be obtained at the same time.
スクリーン印刷法を用いて半導体ペーストを直接基板
に印刷することができるので、従来のホール素子製造法
に比べて工程が簡単となり、生産性が向上し、コストダ
ウンが実現できる。Since the semiconductor paste can be directly printed on the substrate using the screen printing method, the process is simpler than the conventional Hall element manufacturing method, the productivity is improved, and the cost can be reduced.
従来提案されていたスクリーン印刷法による厚膜のホ
ール素子製造法では焼成温度をIn Sbの融点（525℃）あ
るいはそれ以上の温度に設定しなければならなかつたた
め、焼成時に半導体厚膜層が溶けてしまい、基板に対す
る濡れ不良、表面張力による凝集、凝固時の粒状結晶の
発生などが不可避的に起こり、平坦で均一な膜を得るこ
とが極めて困難であつた。これに対し本発明によれば、
混入したIn,Gaなどのバインダ効果により融点下の低温
で焼結が行なえるので、膜の平坦性、均一性を維持した
まま強度の大きい膜を得ることができる。すなわち、II
I族金属の融点は、例えば、Gaの場合、29.8℃、Inの場
合156.4℃と、焼成温度より十分に低いため、混合（添
加）されたIII族金属の粉末が焼成工程で溶融してバイ
ンダ（焼結助剤）として機能する。したがって、膜の平
坦性や均一性を損うことなく、基板に対する付着強度の
大きい、実用性に優れた半導体焼結膜を得ることができ
る。In the thick film Hall element manufacturing method that has been proposed by the screen printing method, the firing temperature must be set to the melting point of In Sb (525 ° C) or higher, so that the semiconductor thick film layer is melted during firing. Therefore, poor wetting of the substrate, aggregation due to surface tension, generation of granular crystals during solidification, etc. inevitably occur, making it extremely difficult to obtain a flat and uniform film. On the other hand, according to the present invention,
Sintering can be performed at a low temperature below the melting point due to the binder effect of mixed In, Ga, etc., so that a film having high strength can be obtained while maintaining the flatness and uniformity of the film. Ie II
The melting point of the group I metal is, for example, 29.8 ° C. for Ga and 156.4 ° C. for In, which is sufficiently lower than the firing temperature. Therefore, the mixed (added) Group III metal powder is melted in the firing step and the binder is added. Functions as (sintering aid). Therefore, it is possible to obtain a highly practical semiconductor sintered film having a large adhesion strength to the substrate without impairing the flatness and uniformity of the film.
In,GaなどのIII族金属を混入した本発明によれば、従
来実用化されている単結晶In Sbのホール係数（約78,00
0）と比較しうる大きさのホール係数が得られており、
積感度の高い素子が形成できる。また、蒸着法による従
来素子と比較した場合には、著しく高感度化できる。According to the present invention in which a group III metal such as In and Ga is mixed, the Hall coefficient (about 78,00
Hall coefficient of a size comparable to 0) is obtained,
An element with high product sensitivity can be formed. In addition, the sensitivity can be remarkably increased as compared with the conventional device by the vapor deposition method.
In Sb単結晶の電気抵抗率ρは約0.003Ωcmとかなり低
いため、従来法による単結晶In Sbホール素子では、実
用素子として具備すべき入力抵抗の値（数（100〜1.5K
Ω程度）を得るために電流端子間の素子寸法を極端に長
くして高抵抗化をはかる必要があつた。これに対し本発
明によれば、第１〜４表に示されるように、電気抵抗率
が単結晶の場合に比べて２桁程大きくできるため、高抵
抗化が容易に実現でき、素子の小形化が可能になる。Since the electrical resistivity ρ of In Sb single crystal is considerably low at about 0.003 Ωcm, the value of input resistance (several (100 to 1.5K
In order to obtain (.OMEGA.), It is necessary to make the element size between the current terminals extremely long to achieve high resistance. On the other hand, according to the present invention, as shown in Tables 1 to 4, the electric resistivity can be increased by about two orders of magnitude as compared with the case of a single crystal, so that high resistance can be easily realized and the size of the element can be reduced. Becomes possible.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 福田 進 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (72)発明者 谷 広次 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (72)発明者 増田 昇 東京都大田区西六郷３丁目26番11号 電気 音響株式会社内 (72)発明者 戸蒔 健治 東京都大田区西六郷３丁目26番11号 電気 音響株式会社内 (72)発明者 大沢 哲夫 東京都大田区西六郷３丁目26番11号 電気 音響株式会社内 (56)参考文献 特開 昭57−152175（ＪＰ，Ａ) 特開 昭56−58291（ＪＰ，Ａ) 特開 昭48−77776（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Susumu Fukuda 2 26-10 Tenjin, Nagaokakyo City, Kyoto Prefecture Murata Manufacturing Co., Ltd. (72) Inventor Koji Tani 2 26-10 Tenjin, Nagaokakyo, Kyoto Stock Company Murata Manufacturing (72) Inventor Noboru Masuda No. 3 26-11 Nishirokugo, Ota-ku, Tokyo Electric Acoustic Co., Ltd. (72) Kenji Tomaki No. 3 26-11 Nishirokugo, Ota-ku, Tokyo Electric Acoustic Co., Ltd. In-house (72) Inventor Tetsuo Osawa 3-26-11 Nishirokugo, Ota-ku, Tokyo Electro-acoustic Co., Ltd. (56) Reference JP-A-57-152175 (JP, A) JP-A-56-58291 (JP) , A) JP-A-48-77776 (JP, A)
Claims (1)
を主成分とする化合物半導体の粉末に、III族金属の粉
末を混合して形成される半導体ペーストを、基板上に所
定形状で直接印刷してなることを特徴とする厚膜半導体
デバイス。1. A compound semiconductor comprising In and Sb or InSb
A thick film semiconductor device, characterized in that a semiconductor paste formed by mixing a powder of a group III metal with a powder of a compound semiconductor containing as a main component is directly printed in a predetermined shape on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59052824A JPH06105801B2 (en) | 1984-03-19 | 1984-03-19 | Thick film semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59052824A JPH06105801B2 (en) | 1984-03-19 | 1984-03-19 | Thick film semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60196984A JPS60196984A (en) | 1985-10-05 |
| JPH06105801B2 true JPH06105801B2 (en) | 1994-12-21 |
Family
ID=12925597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59052824A Expired - Lifetime JPH06105801B2 (en) | 1984-03-19 | 1984-03-19 | Thick film semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06105801B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4877776A (en) * | 1972-01-19 | 1973-10-19 | ||
| JPS57152175A (en) * | 1981-03-16 | 1982-09-20 | Yoshio Sakai | Semiconductor magneto-electric effect device |
-
1984
- 1984-03-19 JP JP59052824A patent/JPH06105801B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60196984A (en) | 1985-10-05 |
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