JPH0610612B2 - Deformation measurement method - Google Patents
Deformation measurement methodInfo
- Publication number
- JPH0610612B2 JPH0610612B2 JP63262680A JP26268088A JPH0610612B2 JP H0610612 B2 JPH0610612 B2 JP H0610612B2 JP 63262680 A JP63262680 A JP 63262680A JP 26268088 A JP26268088 A JP 26268088A JP H0610612 B2 JPH0610612 B2 JP H0610612B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- amount
- deformation
- pattern
- moire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000691 measurement method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims description 32
- 239000002245 particle Substances 0.000 claims description 22
- 150000002500 ions Chemical group 0.000 claims description 20
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、構造材料の変形を測定するのに用いられるモ
アレ法を応用集中部等の局所的な微小変形測定に応用し
得るように、電子線等の粒子線照射でモアレ情報を得る
ようにした新規な変形測定法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention can apply the moire method used for measuring the deformation of a structural material to local micro-deformation measurement such as an application concentration part, The present invention relates to a novel deformation measuring method for obtaining moire information by irradiating a particle beam such as an electron beam.
構造材料は穴、切欠き、溶接部、介在物等があると、そ
れらの周辺に応力集中を生じ、それらの周辺に局所的な
不均一変形を生ずる。このような変形及び応力集中は亀
裂を発生・伝播させるため、構造材料の破壊防止及び寿
命予測の上から、この変形の度合を知ることが必要であ
る。If the structural material has holes, notches, welded parts, inclusions, etc., stress concentration occurs around them and local non-uniform deformation occurs around them. Since such deformation and stress concentration cause cracks to propagate and propagate, it is necessary to know the degree of this deformation from the viewpoint of preventing the structural material from breaking and predicting its life.
従来、このような変形を測定する方法としてモアレ法が
ある。モアレ法は、試料表面に等間隔の平行線または格
子あるいは一定のパターンを形成し、試料を変形させた
後、その試料表面に変形のない同様の平行線または格子
あるいは一定のパターンを重ね合わせることで生ずるモ
アレ模様から各部の変形量を求める方法である。このモ
アレ法には、大別して 試料表面に平行線、格子あるいは一定のパターンを
形成し、試料を変形させた後、その試料表面に透明な樹
脂フイルムあるいはガラスに描いた同様の平行線、格子
あるいは一定のパターンの基準パターンを重ねてモアレ
模様を得る方法、 と同様の変形させた試料を光学的に拡大し、その
拡大画面に透明な樹脂フイルムあるいはガラスに描いた
基準パターンを重ね合わせてモアレ模様を得る方法、 と同様の変形させた試料をテレビカメラで撮影
し、テレビ画面の走査線と試料表面の変形した平行線、
格子あるいは一定のパターンとの間でモアレ模様を生じ
させる方法、 変形前後の試料をテレビカメラで撮影し、変形前後
の試料表面のパターンをコンピユータに記憶させて、コ
ンピユータの演算により両記憶情報からモアレ情報を得
る方法 がある。Conventionally, there is a moire method as a method for measuring such deformation. The moire method is to form parallel lines or a grid or a constant pattern on the sample surface at regular intervals, deform the sample, and then superimpose similar parallel lines or a grid or a constant pattern on the sample surface without deformation. This is a method of obtaining the amount of deformation of each part from the moire pattern that occurs in. This moire method is roughly divided into parallel lines, a grid or a certain pattern on the surface of the sample, and after deforming the sample, a similar parallel line, grid or grid drawn on a transparent resin film or glass is formed on the surface of the sample. A method of obtaining a moire pattern by superimposing a reference pattern of a fixed pattern, optically magnifying a deformed sample, and superimposing a reference pattern drawn on a transparent resin film or glass on the enlarged screen The method of obtaining the same as above, the deformed sample is photographed with a TV camera, and the scanning lines of the TV screen and the deformed parallel lines of the sample surface,
A method to generate a moire pattern between a lattice or a fixed pattern, take a sample of a sample before and after deformation with a TV camera, store the pattern of the sample surface before and after deformation in a computer, and calculate the moire from both stored information by the computer. There are ways to get information.
しかしながら、の方法は、基準パターンの細かさおよ
び正確さに限界があり、の方法は、光学的に拡大する
ため、走査型電子顕微鏡を用いて観察するような微小部
分の変形測定は不可能である。またの方法は、テレビ
画面の走査線の数が一定のため基準パターンが一種類に
限られ、広範囲あるいは逆に微小部分の変形測定は不可
能である。そしての方法は、コンピュータ及び画像処
理装置などの高価な装置を必要とする。さらに
のすべての方法において、走査型電子顕微鏡あるいは走
査型イオン顕微鏡を用いての観察と変形測定を同時に行
うことは不可能である。However, the method of (1) has a limitation in the fineness and accuracy of the reference pattern, and the method of (2) is optically magnified, so that it is impossible to measure the deformation of a minute portion as observed with a scanning electron microscope. is there. In the other method, since the number of scanning lines on the television screen is constant, the number of reference patterns is limited to one, and it is impossible to measure the deformation of a minute portion over a wide range. And that method requires expensive equipment such as a computer and an image processing apparatus. In all of the above methods, it is impossible to simultaneously perform observation and deformation measurement using a scanning electron microscope or a scanning ion microscope.
本発明は、従来のモアレ法の上述の欠点を解消するため
になされたものであり、試料に形成するパターンを細か
くしてそのパターンを正確に検出することができ、した
がって微小部分の微小変形を測定することができて、画
像処理装置を必要とせず、走査型電子顕微鏡あるいは走
査型イオン顕微鏡を用いての観察と変形測定を同時に行
うことも可能である変形測定法の提供を目的とする。The present invention has been made in order to solve the above-mentioned drawbacks of the conventional moire method, and it is possible to make a pattern formed on a sample fine and to accurately detect the pattern, and thus to make a microdeformation of a minute portion small. It is an object of the present invention to provide a deformation measuring method which can perform measurement and does not require an image processing device and can simultaneously perform observation and deformation measurement using a scanning electron microscope or a scanning ion microscope.
本発明者らは、前記目的を達成すべく鋭意研究の結果、
試料表面に従来のモアレ法におけるのと同様の平行線、
格子あるいは一定のパターンを電子線等の粒子線が照射
したときの反射電子量、二次電子発生量あるいは二次イ
オン発生量が他の部分とは異なるように形成して、その
表面に電子線等の粒子線を試料の平行線、格子あるいは
一定のパターンと平行あるいは略平行に照射すると、照
射位置とその位置の反射電子量、二次電子発生量あるい
は二次イオン発生量によってモアレ模様が得られ、した
がって試料の変形を測定し得ることを見出した。The present inventors, as a result of earnest research to achieve the above objects,
Parallel lines similar to those in the conventional moire method on the sample surface,
A lattice or a certain pattern is formed so that the amount of reflected electrons, the amount of secondary electrons generated, or the amount of secondary ions generated when a particle beam such as an electron beam irradiates is different from that of other parts, and the surface of the electron beam is When a particle beam such as is irradiated in parallel or substantially parallel to the parallel line of the sample, the lattice or a certain pattern, a moire pattern can be obtained by the irradiation position and the amount of backscattered electrons, secondary electron generation or secondary ion generation at that position. It was found that the deformation of the sample could therefore be measured.
本発明は、この知見に基いてなされたものであり、試料
表面に電子線等の粒子線が照射したときの反射電子量、
二次電子発生量あるいは二次イオン発生量が他の部分と
は異なる平行線または格子あるいは一定のパターンを形
成し、その試料表面に電子線等の粒子線を平行線状また
は格子状あるいは一定のパターン状に照射して、その照
射位置情報と照射位置における反射電子量、二次電子発
生量あるいは二次イオン発生量情報とからモアレ情報を
得て試料の変形量を求めることを特徴とする変形測定法
にある。The present invention has been made based on this finding, the amount of reflected electrons when the sample surface is irradiated with a particle beam such as an electron beam,
A secondary electron generation amount or secondary ion generation amount forms a parallel line or a lattice or a fixed pattern different from other parts, and a particle beam such as an electron beam is formed on the sample surface in a parallel line shape or a lattice shape or a fixed pattern. Deformation characterized by irradiating in a pattern and obtaining the deformation amount of the sample by obtaining moire information from the irradiation position information and the reflected electron amount, secondary electron generation amount or secondary ion generation amount information at the irradiation position. It is in the measuring method.
すなわち、本発明の変形測定法は、走査型電子顕微鏡や
走査型イオン顕微鏡による観察と同様に電子線等の粒子
線の照射位置情報と照射位置における反射電子量、二次
電子発生量あるいは二次イオン発生量によってモアレ情
報を得ているから、走査型電子顕微鏡や走査型イオン顕
微鏡による試料観察と同時に変形測定を行うことが可能
であり、また、試料に形成する平行線や格子あるいは一
定のパターンを間隔の細かいものにして微小部分の微小
変形を正確に測定することができる。That is, the deformation measuring method of the present invention includes irradiation position information of a particle beam such as an electron beam and the amount of backscattered electrons at the irradiation position, secondary electron generation amount or secondary electron as in the case of observation with a scanning electron microscope or a scanning ion microscope. Since moire information is obtained from the amount of generated ions, it is possible to perform deformation measurement at the same time as observing the sample with a scanning electron microscope or scanning ion microscope. With a small interval, it is possible to accurately measure a minute deformation of a minute portion.
本発明において、試料表面に粒子線が照射したときの反
射電子量、二次電子発生量あるいは二次イオン発生量が
他の部分とは異なる平行線や格子あるいは一定のパター
ンを形成するのは、 電子線レジスト等の粒子線レジストを試料表面に塗
り、その上に平行線状、格子状または一定のパターン状
に粒子線を当て、その粒子線が当たった部分のレジスト
溶剤で除く方法、 粒子線レジストを試料表面に塗り、その上に平行線
状、格子状または一定のパターン状に粒子線を当て、そ
の粒子線が当たらなかった部分のレジストを溶剤で除く
方法、 好ましくは、またはにより露出した試料部分を
イオン研磨あるいは化学研磨し、その後溶剤で残ってい
るレジストを除去する方法、 また好ましくは、またはにより露出した試料部
分に試料とは異なる物質（例えば試料がステンレス鋼の
場合は金、白金、ニッケル、クロム等）を蒸着等の手段
により付着させ、その後溶剤で残っているレジストを除
去する方法、 試料表面にフォトレジストを塗り、その上に平行
線、格子あるいは一定のパターンが描いてあるマスクを
置き、マスクの上から光を当て、光の当たった部分のレ
ジストを溶剤で除く方法、 試料表面にフォトレジストを塗り、その上に平行
線、格子あるいは一定のパターンが描いてあるマスクを
置き、マスクの上から光を当て、光の当たらなかった部
分のレジストを溶剤で除く方法、 好ましくは、またはにより露出した試料部分を
イオン研磨あるいは化学研磨し、その後溶剤で残ってい
るレジストを除去する方法、 また好ましくは、またはにより露出した試料部
分に試料とは異なる物質を蒸着等の手段により付着さ
せ、その後溶剤で残っているレジストを除去する方法、 試料表面に蒸着等により試料とは異なる物質の被膜
を設け、、、または、、、の方法を利用し
て部分的に被膜を除去する方法、 あるいはまたはあるいはにおける溶剤によ
るレジストの除去をその部分にもなお薄くなったレジス
ト被膜が残っているように行い、その後レジスト膜を設
けた表面に、金属薄膜を蒸着等により形成する方法、 等によって行うことができる。〜のホトレジストを
使用する方法でもレーザビームで露出するようにすれば
マスクを用いなくて済む。なお、あるいはまたは
あるいはのような表面にレジストが残る方法では、導
電性のレジストを用いるのが好ましい。また、および
の方法は試料が非導電性の場合に好ましく用いられる
方法である。試料に平行線や格子あるいは一定のパター
ンと共に、スケールも形成するようにすれば、スケール
を利用して粒子線照射間隔の設定が容易になり、歪解析
も容易になる。In the present invention, the amount of reflected electrons when the sample surface is irradiated with a particle beam, the amount of secondary electrons generated or the amount of secondary ions generated to form parallel lines or a lattice or a constant pattern different from other portions, A method in which a particle beam resist such as an electron beam resist is applied to the surface of the sample, and the particle beam is applied to the sample in parallel lines, in a lattice pattern, or in a certain pattern, and the part where the particle beam hits is removed with a resist solvent. A method in which a resist is applied to the surface of a sample, a particle beam is applied on the sample in a parallel line shape, a lattice shape, or a certain pattern, and the portion of the resist not hit by the particle beam is removed with a solvent, preferably, or exposed by A method of ion-polishing or chemical-polishing the sample portion, and then removing the remaining resist with a solvent, and preferably, a substance different from the sample in the sample portion exposed by or. (For example, if the sample is stainless steel, gold, platinum, nickel, chrome, etc.) is attached by means such as vapor deposition, and then the remaining resist is removed with a solvent. Place a mask on which parallel lines, grids or a certain pattern is drawn, irradiate light from the top of the mask, remove the resist in the exposed area with a solvent, apply photoresist to the sample surface, and then apply parallel lines on it. , A method of placing a mask on which a grid or a certain pattern is drawn, irradiating light from the top of the mask, and removing the resist of the part not exposed to light with a solvent, preferably, the sample part exposed by or is ion-polished or chemically A method of polishing and then removing the remaining resist with a solvent, and preferably, a substance different from the sample in the sample portion exposed by or. Is deposited by a method such as vapor deposition, and then the remaining resist is removed with a solvent, a film of a substance different from that of the sample is provided on the sample surface by vapor deposition, or Method of removing the coating film, or / or removing the resist with a solvent so that the thinned resist coating film still remains at that portion, and then a metal thin film is vapor-deposited on the surface where the resist film is provided. And the like. Even in the method of using the photoresists 1 to 3, it is not necessary to use a mask if the exposure is performed with a laser beam. In the method of leaving the resist on the surface as described above, or or alternatively, it is preferable to use a conductive resist. Further, the methods of and are preferably used when the sample is non-conductive. If a scale is formed on the sample along with parallel lines, a lattice, or a certain pattern, the particle beam irradiation interval can be easily set using the scale, and strain analysis can be facilitated.
平行線等を形成した試料表面に電子線を平行線状、格子
状あるいは一定のパターン状に照射し、さらに照射位置
情報と照射位置における反射電子量や二次電子発生量か
らモアレ情報を得るのは、走査型電子顕微鏡を用いて容
易になし得る。走査型電子顕微鏡を用いれば、ブラウン
管に試料表面の像と共に試料の変形によるモアレ模様が
現われるようになるから、そのモアレ模様から変形量を
求めることができる。The electron beam is irradiated on the sample surface on which parallel lines are formed in a parallel line shape, a grid shape or a fixed pattern, and moire information is obtained from the irradiation position information and the amount of backscattered electrons and the amount of secondary electrons generated at the irradiation position. Can be easily done using a scanning electron microscope. If a scanning electron microscope is used, a moire pattern due to the deformation of the sample will appear on the CRT along with an image of the sample surface, and the amount of deformation can be obtained from the moire pattern.
試料表面に粒子線を照射する場合は、走査型イオン顕微
鏡を用いればよい。それによって走査型電子顕微鏡と同
様、ブラウン管で試料表面やモアレ模様を見ることがで
きる。When irradiating the particle surface with the particle beam, a scanning ion microscope may be used. As a result, similar to the scanning electron microscope, the sample surface and the moire pattern can be seen on the cathode ray tube.
また、モアレ模様をブラウン管に表示する以外に、電子
線等の粒子線の照射位置情報と照射位置の反射電子量、
二次電子発生量あるいは二次イオン発生量の情報をコン
ピュータに入力して、コンピュータでそれら情報からモ
アレ情報を得て、各位置における変形量を求めるように
することもできる。それによれば、モアレ模様を計測す
る等の手間が省略される。In addition to displaying a moire pattern on a cathode ray tube, irradiation position information of a particle beam such as an electron beam and the amount of reflected electrons at the irradiation position,
It is also possible to input the information of the secondary electron generation amount or the secondary ion generation amount to the computer, obtain the moire information from the information by the computer, and obtain the deformation amount at each position. This saves the trouble of measuring the moire pattern.
以下、さらに本発明の具体的実施例を示す。Hereinafter, specific examples of the present invention will be shown.
実施例1. 試料としてリン青銅を使用し、その表面を平滑に磨き、
これを毎分１５００回転で回転させながら、ポリメチル
メタアクリレートからなるレジストを滴下させて、リン
青銅の表面にレジストを均一に塗布した。レジストを塗
布した試料を走査型電子顕微鏡の試料台にセットし、走
査型電子顕微鏡の電子線を１０μｍの間隔の平行線状に
レジストにあてた。その後、試料台より外し、メチルイ
ソブチルケトンとエソプロピルアルコールの混合液中に
浸し、電子線が当たった部分のレジストを取り去りリン
青銅表面を露出させた。Example 1. Phosphor bronze was used as a sample, and its surface was polished smoothly,
While rotating this at 1500 rpm, a resist made of polymethylmethacrylate was dropped to uniformly apply the resist on the surface of phosphor bronze. The resist-coated sample was set on the sample stand of the scanning electron microscope, and the electron beam of the scanning electron microscope was applied to the resist in parallel lines at intervals of 10 μm. After that, it was removed from the sample table and immersed in a mixed solution of methyl isobutyl ketone and esopropyl alcohol, and the resist in the portion exposed to the electron beam was removed to expose the phosphor bronze surface.
次に、イオンスパッタリング装置を用いて露出部分に白
金を蒸着させた後、残りのレジストをアセトンで取り除
き、白金からなる１０μｍの間隔の平行線群を試料表面
上に形成させた。Next, platinum was vapor-deposited on the exposed portion using an ion sputtering device, and the remaining resist was removed with acetone to form parallel lines made of platinum at intervals of 10 μm on the sample surface.
得られた試料を走査型電子顕微鏡の試料台にセットし、
走査型電子顕微鏡の電子線を１０μｍの間隔の平行線状
に試料に試料の平行線群と平行にあてた。この場合は、
走査型電子顕微鏡のブラウン管上にモアレ縞は現れな
い。Set the obtained sample on the sample stage of the scanning electron microscope,
An electron beam of a scanning electron microscope was applied to the sample in parallel lines at intervals of 10 μm in parallel with the parallel line group of the sample. in this case,
No moire fringes appear on the cathode ray tube of the scanning electron microscope.
さらに、この試料を、室温において２０kg/ｍｍ2の応力
をかけ、変形させ、再び走査型電子顕微鏡の試料台にセ
ットし、走査型電子顕微鏡の電子線を１０μｍの間隔の
平行線状に試料にあてると、ブラウン管上にモアレ縞が
現れる。例えば、モアレ縞の間隔が１００μｍになって
いた部分は、約１１％のひずみが生じていることにな
る。Further, this sample was deformed by applying a stress of 20 kg / mm 2 at room temperature and set again on the sample stand of the scanning electron microscope, and the electron beam of the scanning electron microscope was converted into parallel lines at intervals of 10 μm. When applied, moire fringes appear on the CRT. For example, in a portion where the distance between the moire fringes was 100 μm, a strain of about 11% was generated.
実施例 2. 実施例 １ における走査型電気顕微鏡の電子線を走査
する偏向電圧情報と反射電子おび二次電子の検出器から
の情報をA/D変換し、コンピュータで演算して各位置の
歪が求められるようにした。Example 2. The deflection voltage information for scanning the electron beam of the scanning electron microscope in Example 1 and the information from the detectors of backscattered electrons and secondary electrons are A / D converted and calculated by a computer to distort each position. Was requested.
実施例 3. 実施例 １ の２０kg/ｍｍ2の応力をかけた試料を走査
型イオン顕微鏡の中にいれ、３０ＫＶで加速したＧａイ
オンの粒子線を１０μｍの間隔の平行線状に試料にあて
ると、ブラウン管上にモアレ縞が現れる。例えば、モア
レ縞の間隔が１００μｍになっていた部分は、約１１％
のひずみが生じていることになる。Example 3 The sample of Example 1 to which a stress of 20 kg / mm 2 was applied was placed in a scanning ion microscope, and a Ga ion particle beam accelerated at 30 KV was applied to the sample in parallel lines at intervals of 10 μm. , Moire fringes appear on the CRT. For example, the area where the moire fringe spacing was 100 μm was about 11%.
It means that the distortion is occurring.
実施例 4. 実施例 ３ における走査型イオン顕微鏡の粒子線を走
査する偏向電圧情報と二次電子および二次イオンの検出
器からの情報をA/D変換し、コンピュータで演算して各
位置の歪が求められるようにした。Example 4. The deflection voltage information for scanning the particle beam of the scanning ion microscope in Example 3 and the information from the detectors of secondary electrons and secondary ions are A / D converted and calculated by a computer to calculate each position. The distortion is required.
本発明の変形測定法は、１ｎｍ程度の粒子精度でコント
ロールできる電子線等の粒子線を用いて試料の変形によ
るモアレ情報を得るようにしているから、モアレを生じ
させる平行線や格子あるいは一定のパターンを間隔の極
めて細かいものにすることができ、したがって従来のモ
アレ法では求められなかった微小部の微小変形までも精
度よく測定することができて、走査型電子顕微鏡や走査
型イオン顕微鏡による観察と変形の測定を同時に行うこ
とができ、画像処理装置を必要とすることなくコンピュ
ータで直接各部の変形量を求めることもできるという多
くの優れた効果を奏する。Since the deformation measuring method of the present invention obtains moire information due to the deformation of a sample by using a particle beam such as an electron beam which can be controlled with a particle accuracy of about 1 nm, a parallel line or a grid that causes moire or a constant value. Patterns can be made with extremely fine intervals, and therefore even minute deformations of minute parts that were not required by the conventional moire method can be accurately measured, and observation with a scanning electron microscope or scanning ion microscope is possible. And deformation can be measured at the same time, and many excellent effects can be obtained in that the amount of deformation of each part can be directly calculated by a computer without the need for an image processing device.
Claims (1)
子量、二次電子発生量あるいは二次イオン発生量が他の
部分とは異なる平行線または格子あるいは一定のパター
ンを試料表面に形成し、その試料表面に電子線等の粒子
線を平行線状または格子状あるいは一定のパターン状に
照射して、その照射位置情報と照射位置における反射電
子量、二次電子発生量あるいは二次イオン発生量情報と
からモアレ情報を得て試料の変形量を求めることを特徴
とする変形測定法。1. A parallel line, a lattice, or a certain pattern having a reflected electron amount, a secondary electron generation amount, or a secondary ion generation amount when irradiated with a particle beam such as an electron beam is different from other portions on the sample surface. The sample surface is irradiated with a particle beam such as an electron beam in a parallel line shape, a grid shape, or a fixed pattern, and the irradiation position information and the amount of reflected electrons at the irradiation position, the amount of secondary electrons generated, or the secondary electron A deformation measuring method characterized in that the amount of deformation of a sample is obtained by obtaining moire information from the amount of generated ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63262680A JPH0610612B2 (en) | 1988-10-20 | 1988-10-20 | Deformation measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63262680A JPH0610612B2 (en) | 1988-10-20 | 1988-10-20 | Deformation measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02110308A JPH02110308A (en) | 1990-04-23 |
| JPH0610612B2 true JPH0610612B2 (en) | 1994-02-09 |
Family
ID=17379097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63262680A Expired - Lifetime JPH0610612B2 (en) | 1988-10-20 | 1988-10-20 | Deformation measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0610612B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003076888A1 (en) * | 2002-03-14 | 2003-09-18 | Horiba,Ltd. | Stress measuring method and stress measuring deviced |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5152615B2 (en) * | 2006-05-25 | 2013-02-27 | 独立行政法人物質・材料研究機構 | Disturbance detection measurement method for arrangement of minute regular patterns |
| JP4985280B2 (en) * | 2007-09-27 | 2012-07-25 | 住友電気工業株式会社 | Diffraction grating shape evaluation method |
-
1988
- 1988-10-20 JP JP63262680A patent/JPH0610612B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003076888A1 (en) * | 2002-03-14 | 2003-09-18 | Horiba,Ltd. | Stress measuring method and stress measuring deviced |
| JPWO2003076888A1 (en) * | 2002-03-14 | 2005-07-07 | 株式会社堀場製作所 | Stress measuring method and stress measuring apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02110308A (en) | 1990-04-23 |
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