JPH0611024B2 - Development method - Google Patents

Description

Description: [Object of the Invention] (Field of Industrial Application) The present invention relates to a developing method for developing a substrate to be processed such as a semiconductor wafer.

(Prior Art) Generally, in a developing device for developing a substrate to be processed such as a semiconductor wafer, a processing chamber in which a substrate having a photosensitive film such as a photoresist formed thereon is arranged, and a processing chamber in which the substrate is processed. And means for bringing the substrate to be processed into contact with the developing solution for a predetermined development time to cause a predetermined chemical change in the photosensitive film to perform development.

Then, a substrate to be processed such as a semiconductor wafer is placed on a mounting table arranged in the processing chamber, and a developing solution and a rinse liquid such as pure water are sequentially supplied to the substrate to be processed from a spray nozzle or the like to perform development. .

(Problems to be Solved by the Invention) However, in the developing method using the above-described conventional developing device, a large amount of developing solution is required, so that there is a problem that the developing cost becomes high.

In order to solve such a problem, the present inventors have developed a dip-type developing device that performs development by immersing a substrate to be processed in a developing solution. In the dip type developing device, for example, when the development speed is improved by improving the developing solution for shortening the development time, the size of the substrate to be processed is increased, the developing state becomes uneven in the surface of the substrate to be processed, For example, when a fine pattern is formed on a semiconductor wafer by using a precision photographic technique, it has been found that there arises a problem that the line width formed on the surface of the semiconductor wafer becomes nonuniform.

The present invention has been made to solve the above problems, and can perform development processing with a small amount of developing solution, which can reduce development cost and improve efficiency, and, for example, to provide a high-speed developing solution. Even when a large substrate to be processed is developed, the development process can be performed so that the in-plane development state is uniform, and the line width and the like formed on the semiconductor wafer surface can be uniformized. An attempt is made to provide a developing method.

[Structure of the Invention] (Means for Solving Problems) That is, according to the developing method of the present invention, a substrate to be processed having a photosensitive film formed thereon is arranged in a container surrounding the substrate to be processed. Then, in a state where the exhaust of the processing chamber is stopped, a developing solution is supplied into the container, the substrate to be processed is brought into contact with the developing solution to develop, and the processing chamber is exhausted at a predetermined exhaust amount. , Discharging the developer in the container, holding the substrate to be processed on a rotary mounting table, and supplying the rinse liquid to the surface of the substrate to be processed while rotating the rotary mounting table at a first rotation speed. Steps and while exhausting the inside of the processing chamber, the rotary mounting table is rotated at a second rotation speed higher than the first rotation speed to remove liquid adhering to the substrate to be processed by centrifugal force and dry. And the rotation of the rotary mounting table is stopped. Is not characterized by a step of unloading from the processing chamber to the substrate to be treated by the discharge mechanism.

(Operation) In the developing method of the present invention, after the substrate to be processed is brought into contact with the developing solution supplied into the container to be developed, the rinsing solution is supplied and dried at a speed corresponding to the rotation speed of the rotary mounting table. Is going on. Further, the processing chamber is evacuated according to each process. Therefore, it is possible to efficiently perform development processing with a small amount of developing solution, and to ensure that the in-plane development state is uniform even when developing a large substrate to be processed using, for example, a high-speed developing solution. Development processing can be performed.

(Examples) Examples of the developing method of the present invention will be described below with reference to the drawings.

FIG. 1 shows the structure of a developing device 1 of an embodiment to which the developing method of the present invention is applied. In the developing device 1 according to this embodiment, in the processing chamber 2, a mounting table 4 including a vacuum chuck for sucking and holding a substrate 3 to be processed such as a semiconductor wafer and a rotating mechanism 4a is arranged.

In addition, as shown in FIG. 2, the processing chamber 2 is vertically movable, holds the substrate 3 to be processed by suction with a vacuum chuck or the like, and forms an annular weir surrounding the substrate 3 to be processed. The annular member 5a is arranged. The annular member 5a is arranged so as to surround the mounting table 4, and is provided with a plurality of developing solution supply ports 5b for forming a developing solution flow substantially parallel to the substrate 3 to be processed. . A ring-shaped member 5d is formed on the annular member 5a so as to face the developing solution supply port 5b with a gap and to direct the developing solution flow downward. Thus, a developing solution supply section is formed. Has been done.

A rinse nozzle 6 for supplying a rinse liquid such as pure water to the substrate 3 to be processed is arranged above the mounting table 4.

A waste liquid discharge opening 7 and an exhaust opening 9 connected to an exhaust device 8 are arranged in the lower part of the processing chamber 2, and an exhaust passage is provided between the exhaust device 8 and the exhaust opening 9. A shutter 10 that opens and closes is inserted.

In the developing device of this embodiment having the above-mentioned configuration, the developing process is performed by being controlled by, for example, a controller (not shown) such as a microcomputer as follows.

That is, first, the substrate 3 to be processed is placed on the mounting table 4 by a transfer device (not shown), the vacuum chuck of the mounting table 4 is operated, and the substrate 3 to be processed is suction-held on the mounting table 4.

Next, the annular member 5a is lifted to move the substrate 3 to be processed from the mounting table 4 to the annular member 5a, and the developing solution supply port 5b causes a developing solution flow that is substantially parallel to the processing substrate 3 in the direction of the processing substrate 3. The developing solution is supplied downward by the facing portion 5c by the facing portion 5c, the developing solution is stored in the annular member 5a, and the development is performed for a predetermined developing time such as 30 seconds set in advance. The liquid is brought into contact with the substrate 3 to be processed, and the photosensitive film such as a photoresist formed on the surface of the substrate 3 to be processed is developed. During this development time, the shutter 11 is closed and the exhaust from the processing chamber 2 is stopped.

After that, the annular member 5a is moved down to move the substrate 3 to be processed from the annular member 5a to the mounting table 4, and the developing solution is discharged.
It is rotated at a first rotation speed of about pm to 2000 rpm, and a rinse liquid such as pure water is supplied from the rinse nozzle 6 to the surface of the substrate 3 to be processed. At this time, the shutter 10 is opened and 10 to 20 mmH ₂
Exhaust from the processing chamber 2 is performed with an exhaust amount of about O.

After the rinse operation is performed for a predetermined time of, for example, 10 seconds to 20 seconds, the supply of the rinse liquid from the rinse nozzle 6 is stopped, and the substrate 3 to be processed is rotated, for example, 3000 rpm to 5000 rpm.
The liquid having adhered to the surface of the substrate 3 to be processed is removed by a centrifugal force by increasing the second rotation speed to a degree, and the substrate 3 to be processed is dried. During this time, the shutter 11 is still open and 10 to 20 mm
The exhaust from the processing chamber 2 is performed with an exhaust amount of about H ₂ O.

When the drying of the substrate 3 to be processed is completed, the rotation mechanism 4a is stopped, and the substrate 3 to be processed is unloaded from the processing chamber 2 by a transfer device (not shown).

That is, according to the developing method of this embodiment, the substrate 3 to be processed is
Is brought into contact with the developing solution supplied into the container formed by the annular member 5a and the substrate 3 to be processed, and then the rotation speed of the mounting table 4 is switched to supply and dry the rinse solution. Further, it is possible to perform the developing treatment efficiently and uniformly with a small amount of developing solution.

Further, a developing solution flow is formed from the developing solution supply port 5b in a direction substantially parallel to the substrate to be processed 3 and the developing solution flow is directed downward by the facing portion 5c of the ring-shaped member 5d. Supply and store the developer in the annular member 5a,
The developing solution is brought into contact with the substrate 3 to be processed for a predetermined developing time,
The photosensitive film such as a photoresist formed on the surface of the substrate to be processed is developed. Therefore, the developer can be supplied at high speed and uniformly over the entire surface of the substrate to be processed,
The development processing can be performed so that the development state within the surface of the target substrate 3 is uniform.

[Advantages of the Invention] As described above, in the developing method of the present invention, the developing process can be efficiently performed with a small amount of the developing solution, and the developing cost can be reduced. Even when a large substrate to be processed is developed, the development process can be performed so that the in-plane development state is uniform, and the line width and the like formed on the semiconductor wafer surface can be uniformized. .

[Brief description of drawings]

FIG. 1 is a diagram showing the structure of a developing device according to an embodiment to which the method of the present invention is applied, and FIG. 2 is an enlarged vertical sectional view showing a main part of the developing device shown in FIG. 1 ... Developing device, 3 ... Substrate to be processed, 5a ... Annular member, 5b ... Developer supply port, 5c.
Ring-shaped member.

Claims (1)

[Claims] 1. A substrate to be processed having a photosensitive film formed on its surface is placed in a container surrounding the substrate to be processed, and a developing solution is placed in the container while the exhaust of the processing chamber is stopped. Supplying and contacting the substrate to be developed with the developing solution, and developing the processing chamber by evacuating the processing chamber with a predetermined exhaust amount, discharging the developing solution in the container, and rotating the processing substrate. A step of supplying a rinsing liquid to the surface of the substrate to be processed while holding it on a table and rotating the rotary table at a first rotation speed; Rotate at a second rotation speed faster than 1 rotation speed,
And a step of removing the liquid adhering to the substrate to be processed by centrifugal force to dry the substrate, and a step of stopping the rotation of the rotary mounting table and carrying out the substrate to be processed from the processing chamber by a carry-out mechanism. Characteristic development method.