JPH06112369A - Method for manufacturing resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To provide the manufacture of an ultrathin semiconductor device sealed with resin very high in mechanical strength, thermal shock resistance, crack resistance, and moisture resistance by reducing the deformation of a lead wire and reducing the occurrence of edge touch at the time of sealing with resin using a resin sheet for sealing. CONSTITUTION:In the manufacture of a semiconductor device sealed with resin, which arranges the resin sheets 1 and 2 for sealing consisting of unhardened resin above and below the semiconductor chip connected to an outer lead constituent and hardens the resin sheet for sealing consisting of unhardened resin while pressing it against a semiconductor chip with a press mold, the thickness of the resin sheet 2 for sealing on the rear side of a chip is thickened more than that of the resin sheet 1 for sealing on the side of the active face of the chip, and they are hardened by pressing.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-encapsulated semiconductor device, and more particularly to a method of manufacturing a resin-encapsulated semiconductor device using a resin sheet for encapsulation.

[0002]

2. Description of the Related Art Conventionally, resin-sealed semiconductor devices have been sealed by a transfer molding method. In this method, uncured resin such as epoxy molding material mainly composed of epoxy resin and filler is heated and melted, and then transferred.
This is a method in which a semiconductor chip mounted on, for example, a lead frame is sealed by injecting into a mold using a molding machine, molding in a high temperature and high pressure state, and curing. The resin-encapsulated semiconductor device manufactured by this method is excellent in reliability because the semiconductor chip is completely covered with the epoxy resin composition, and the package appearance is good because it is densely molded with a mold. Therefore, most resin-encapsulated semiconductor devices are currently manufactured by this method.

However, as the size of a semiconductor chip has increased in recent years due to the higher integration of semiconductor devices, the package size of resin-encapsulated semiconductor devices has increased. Is becoming stronger,
This tendency is expected to become stronger and stronger in the future. In addition, it is expected that the types of packages will become more and more diverse in the future, and the conventional transfer molding method will not be able to adequately support them. Under such circumstances, there is a demand for development of a flexible production mode capable of high-mix low-volume production. Further, there is a problem of in-line manufacturing process. That is, in the manufacturing process of semiconductor devices, full automation is in progress, and some of them are automated by one line and unmanned. However, it is difficult to inline the encapsulation process of semiconductor devices by conventional transfer molding, and the production is performed in batch processing by removing the line, and there is a new production mode that allows the encapsulation process to be inline. It has been demanded.

[0004]

From this point of view,
A method for manufacturing a resin-encapsulated semiconductor device using a resin sheet for encapsulation, which is called a prepreg, in which glass fiber is impregnated with a resin, has been proposed (Japanese Patent Laid-Open No. 2-257662).
6 (a) and 6 (b) are sectional views showing a semiconductor chip sealing step in this manufacturing method. As shown in the figure, this method is performed, for example, by sandwiching a semiconductor chip 5 connected to a lead 3S of a film carrier via a bump 4 with sealing resin sheets 1 and 2 and applying pressure using a mold having a recess. This method is performed by heating and molding. This method can cope with larger and thinner packages than the conventional transfer molding method, and is suitable for high-mix low-volume production of resin-sealed semiconductor devices. However, as shown in FIG. 6 (a), if the sealing resin sheet on the chip active surface side and the sealing resin sheet on the back surface side have the same thickness, as shown in FIG. 6 (b), The resin on the active surface side flows into the back surface side at the time of molding, and at that time the lead 3S is washed away and deformed, and if the deformation is large, contact between the lead 3S and the corner of the semiconductor chip S, that is, an edge touch occurs. there were.

The present invention has been made in view of the above circumstances, and suppresses the deformation of leads and the occurrence of edge touch at the time of resin encapsulation using a resin sheet for encapsulation, mechanical strength, thermal shock resistance, An object of the present invention is to provide a method of manufacturing an ultrathin resin-sealed semiconductor device having extremely high crack resistance and moisture resistance.

[0006]

Therefore, in the present invention, a sealing resin sheet made of an uncured resin is arranged above and below a semiconductor chip connected to an external lead structure, and the sealing resin sheet made of the uncured resin is arranged. In the method of manufacturing a resin-encapsulated semiconductor device in which a resin sheet is cured while being pressed onto the semiconductor chip, the thickness of the encapsulating resin sheet on the back surface of the chip is smaller than the thickness of the encapsulating resin sheet on the chip active surface side. It is made thick and pressure-cured.

Desirably, the thickness of the sealing resin sheet on the back surface of the chip is 1.1 to 20 times, and further 3 to 8 times the thickness of the sealing resin sheet on the active surface side of the chip. There is. The reason for this is that if the ratio of the sheet thickness on the active surface side and the back surface side of the semiconductor chip is less than 1.1 times, the effect of suppressing the deformation of the leads and the occurrence of edge touch is small, and If the thickness ratio exceeds 20 times, the thermal shock resistance of the obtained resin-encapsulated semiconductor device may decrease. Also, the size of the sealing resin sheet needs to be smaller than the size of the cavity of the mold that is normally used for pressurization.

The thickness ratio of the upper and lower sealing resin sheets is
Thickness and size of semiconductor chip, semiconductor chip and external leads
The form of connection with the connection structure depends on the type of connection. After sealing,
As shown in FIG. 5, the resin is applied to a portion A above the semiconductor chip 5 and the leads 3S, a portion B between the leads 3S and the back surface of the semiconductor chip 5, and a portion C below the back surface of the semiconductor chip 5. Is filled. Of these, the portion A is the resin supplied by the encapsulating resin sheet on the active surface side, and this volume needs to be substantially the same as the volume of the encapsulating resin sheet on the active surface side. If the volume of the sealing resin sheet on the active surface side is larger than that of the portion A, the resin flows into the portion B at the time of thermocompression bonding, and at that time, the leads 3S are deformed,
When the deformation is large, edge touch may occur. The portions B and C are supplied by the resin sheet for sealing on the back surface side, and the volume of the portion C substantially matches the volume of the portion A. Therefore, by making the sealing resin sheet on the back surface side thicker by the volume of the portion B, the resin of the sealing resin sheet on the active surface side flows into the portion B at the time of thermocompression bonding, and the lead 3S is deformed. Can be prevented.
The volume of the portion B depends on the area and thickness of the semiconductor chip 5. That is, since the volume of the portion B becomes smaller as the area of the semiconductor chip 5 becomes larger, the ratio of the upper and lower sheet thicknesses may be small. Further, since the volume of the portion B becomes larger as the semiconductor chip 5 becomes thicker, it is necessary to increase the ratio of the upper and lower sheet thicknesses.

The electrical connection between the external lead structure and the semiconductor chip may be made by wire bonding,
Although wireless bonding such as TAB or flip chip may be used, wireless bonding is more advantageous for thinning the package and is suitable for manufacturing a surface-mounting resin-sealed semiconductor device.

In the present invention, the types of the external lead structure and the semiconductor chip are not particularly limited.
In the present invention, the external lead structure includes a lead frame, a film carrier, and the like, and the material of the uncured resin forming the sealing resin sheet is a thermosetting resin, a photocurable resin, Although engineering plastics and the like can be mentioned, it is preferable to use an uncured thermosetting resin because the lower the resin viscosity at the time of integral molding is, the more precise sealing can be performed. As a specific method of curing such an uncured resin, in the case of a thermosetting resin,
Examples thereof include a method of heating a mold used for integral molding, and a method of selectively heating only the uncured resin by induction heating. Further, in the case of a photo-curable resin, a method in which the mold is made of a translucent member such as glass and the light is irradiated through the mold can be adopted.

The thermosetting resin used in the present invention includes epoxy resin, polyimide resin, maleimide resin,
Silicone resin, phenol resin, polyurethane resin,
Acrylic resin etc. are mentioned. These resins may be used alone or in combination, and in these resins, a curing agent, a catalyst, a plasticizer, a colorant, a flame retardant, a filler,
It may contain various other additives.

Preferably, among the epoxy resins,
The semiconductor chip is sealed with a sealing resin sheet containing a biphenyl type epoxy resin as represented by the following formula (I).

[0013] However, in the formula, R represents a hydrogen atom or a methyl group. R2 R3 R5 R6 R2'R3'R5'R6 'are each a hydrogen atom, a methyl group, an ethyl group, an isopropyl group, a butyl group,
It represents one selected from the group consisting of a phenyl group, a chlorine atom, and a bromine atom, and may be the same or different. n
Represents an integer of 0 to 5.

For example, 4,4'-bis (2,3-epoxypropoxy) biphenyl, 4,4'-bis (2,3-)
Epoxypropoxy) -3,3'5,5'-tetrabiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3'5,5'-tetramethyl-2-chlorobiphenyl, 4, 4'-bis (2,3-epoxypropoxy) -3,3'5,5'-tetramethyl-2-bromobiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3'5 , 5'-tetraethylbiphenyl,
4,4'-bis (2,3-epoxypropoxy) -3,
3'5,5'-tetrabutylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3'5,5 '
-Tetraphenyl biphenyl and the like. This epoxy resin has a function of improving the thermal shock resistance of the cured product, and thus of the obtained resin-sealed semiconductor device.

Further, a trifunctional epoxy resin represented by the following general formula (II) can also be preferably used. General formula (II)
Specific examples of the epoxy resin represented by are EPPN-
502 (Nippon Kayaku: softening point 70 ° C., epoxy equivalent 17
0), YL-932H (made by Yuka Shell, softening point 85 ° C.,
Epoxy equivalent 210) and the like can be mentioned.

[0016] However, R1 and R2 are each hydrogen atom or 1 to 20 carbon atoms.
Represents an alkyl group, and n represents 0 or a positive integer.

Further, in the present invention, the uncured resin may be reinforced with various woven fabrics. As the material of the woven fabric, there are glass, quartz, carbon fiber, silicon carbide, silicon nitride, aluminum nitride, alumina, zirconia, potassium titanate fiber, etc. for the inorganic type, and nylon type, acrylic type, vinylon type, poly type for the organic type. Vinyl chloride type, polyester type,
There are aramid, phenol, rayon, acetate, cotton, hemp, silk and wool. These may be used alone or in combination.

Further, in the present invention, a sealing resin sheet formed by laminating a metal material, preferably a metal foil having a thickness of 1000 μm or less, on the uncured resin as described above may be used. In this case, the sealing resin sheet is arranged so that the uncured resin side of the sealing resin sheet and the active surface side of the semiconductor chip face each other. As the material of the metal material, for example, iron,
Copper, aluminum, nickel, chrome, zinc, tin, silver,
In addition to metals such as gold, lead, magnesium, titanium, zirconia, tungsten, molybdenum, and cobalt, alloys such as stainless steel, 42 nickel-iron alloy, brass, and duralumin can be given. However, when aiming to make the package thinner, it is desirable to use a material that can be processed particularly thin and is lightweight.

Further, it is desirable that the maximum particle diameter of the filler and the low stress additive used in the present invention is 90% or less of the resin thickness on the chip active surface side after the semiconductor chip is sealed.
If a resin having a maximum particle size exceeding 90% of the resin thickness is used, a force is applied to the active surface of the chip, and the wiring may be cut. Similarly, the maximum particle size of the resin sheet for sealing on the back surface of the chip is preferably 90% or less of the resin thickness.

The sealing resin sheet used in the present invention
For example, epoxy resin, curing agent, catalyst, filler,
Low stress additive and other materials are crushed, mixed and melted
It can be produced by applying a filter. The resulting sheet is very brittle and can be cut by first heating it on release paper and pressing a cold blade to cut it into a predetermined size. The heating temperature of the sheet or blade is preferably 70 to 130 ° C. This is because the resin melts sufficiently at this temperature but the hardening does not proceed.

When a prepreg reinforced with a woven fabric such as glass fiber is used, a resin, a curing agent, a catalyst, a filler and other materials are dissolved in a solvent such as acetone to prepare a solution having an appropriate concentration. And then apply this solution to a woven cloth, or
The solvent may be volatilized by a method of impregnating the woven cloth in the solution, leaving it standing, heating it, or placing it under reduced pressure.

Further, in the present invention, when the semiconductor chip and the sealing resin sheet are compression-molded, it is desirable to reduce the pressure in the mold in order to prevent the generation of voids. Furthermore, after-curing is desirable to improve various characteristics of the package after molding.

In the present invention, the external lead structure such as a film carrier on which the semiconductor chip is mounted and the sealing resin sheet can be supplied by a reel system. For example, by supplying with a reel so as to correspond to each other, and combining and sealing, the semiconductor device assembly to sealing can be performed in a continuous process. However, in order to frame the resin-sealed portion of the external lead structure with a frame-shaped die with good adhesion, it is desirable that the resin sheet for sealing is supplied by a cut method rather than a reel method.

[0024]

According to the present invention, with the above-described configuration, the uncured resin melts in a state in which the external lead structure is framed with good adhesion according to the shape of the semiconductor chip and the external lead structure. As a result, the deformation rate of the lead is significantly reduced. That is, here, there is no problem that the resin flows from the chip active surface side to the chip back surface side that deforms the leads, and there is no problem that the leads come into contact with the corners of the semiconductor chip. Further, as described above, since the encapsulating resin sheet is sealed in a state of being brought into contact with the semiconductor chip and the leads in advance, the viscosity of the uncured resin at the time of melting is higher than that of the transfer molding method. However, good sealing can be performed. Therefore, it is possible to seal the semiconductor chip by melting and curing the uncured resin by supplying a small amount of heat or light.

Further, since the uncured resin is melted and cured in a good state in this way, the mechanical strength of the obtained package is high, and when the package is smaller than the semiconductor chip or in the case of an ultra-thin package. The semiconductor chip can be satisfactorily sealed without cracks.

The method of manufacturing a resin-encapsulated semiconductor device according to the present invention enables automatic manufacturing due to the in-line encapsulation process, and is sufficiently adaptable to high-mix low-volume production.

As described above, according to the present invention, it is possible to simplify the manufacturing process, and it is possible to manufacture the resin-sealed semiconductor device having good reliability for a long period of time.

Further, among the epoxy resins, the use of the biphenyl type epoxy resin represented by the formula (I) makes it easy to form a very thin encapsulating resin sheet because it is flexible and not brittle, and the adhesive Since the resin-sealed semiconductor device has good properties, it is possible to obtain a more reliable resin-encapsulated semiconductor device having excellent thermal shock resistance and the like.

[0029]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 shows a manufacturing process diagram of the resin-sealed semiconductor device of the first embodiment of the present invention. This example is characterized by the resin component of the encapsulating resin sheet. For example, the thickness of the encapsulating resin sheet on the active surface side is 0.1 mm, and the thickness of the encapsulating resin sheet on the back surface side is 0. Depending on the thickness and size of the semiconductor chip such as 5 mm, the ratio of the thickness of the back surface side encapsulating resin sheet to the thickness of the active surface side encapsulating resin sheet becomes a desired value of 1 or more. It is characterized by having done.

First, the raw materials used in the examples of the present invention will be described in detail.

First epoxy resin: YX-4000H
(4,4'-bis (2,3-epoxypropoxy)-
3,3'5,5'-tetramethylbiphenyl: made of oiled shell epoxy, epoxy equivalent 193, melting point 100 ° C) Second epoxy resin: ESX-221 (Sumitomo Chemical,
Epoxy equivalent 220, softening point 85 ° C.) Third epoxy resin: ESCN-195XL (orthocresol novolac type epoxy resin, Sumitomo Chemical, epoxy equivalent 197) First phenol resin: BRG-556 (Showa Polymer, phenol) Novolac resin, hydroxyl equivalent 10
4) Second phenol resin: XL-225L (Mitsui Toatsu Chemicals, phenol aralkyl resin, softening point 84 ° C, hydroxyl equivalent 180) Silane coupling agent: A-187 (UCC) carbon black: CB-30 (manufactured by Mitsubishi Kasei) Curing accelerator: C17Z (manufactured by Shikoku Kasei, heptadecyl imidazole) Silicone gel: Heat curing type addition type silicone corn gel MBS: Average particle size 30 μm Release agent: Ester wax Flame retardant aid: Antimony trioxide First fused silica: GR-80AK (maximum particle size 100 μm or more) Second fused silica: PK451 (maximum particle size 40 μm or less) These components were blended in the blending ratio (% by weight) shown in Table 1. . Here, the silicone gel and MBS were used by being dispersed in a phenol resin as a curing agent in advance.

[0033] That is, the phenol resin was heated above the softening point in a universal mixer, the silicone gel and the MBS powder were added, and the mixture was stirred and mixed, further kneaded with a three-roll mill, and uniformly dispersed to reduce the maximum particle diameter. . Then, each component was kneaded with two rolls to form a sheet, and in a heated state, a cold blade was pressed against the sheet to cut it into a size of 14 mm × 14 mm.

Then, each was processed into a size and a thickness as shown in Table 2 to form upper and lower sealing resin sheets.

[0035] In carrying out resin encapsulation using the encapsulating resin sheet thus formed, first, as shown in FIG. 1, the semiconductor chip 5 connected to the external lead structure 3 via the bump 4 is connected.
The sealing resin sheets 1 and 2 made of uncured resin were arranged on the active surface side and the back surface side, respectively. Next, a frame-shaped die 8 having an inner peripheral portion surrounding the outer peripheral portions of the sealing resin sheets 1 and 2, and a press die fitted to the frame-shaped die 8 and provided with grooves on the outer peripheral portion as air vents. A mold device including a mold 9 is prepared, and the frame-shaped mold 8 is brought into contact with the external lead portion of the external lead structure 3, and the press mold 9 is fitted with the frame-shaped mold 8. The encapsulating resin sheets 1 and 2 made of the uncured resin were cured while being pressed against the semiconductor chip 5.

Specifically, after the resin sheet for sealing is formed by the above-mentioned method, subsequently, as the external lead constituent body 3,
By a normal method, a copper foil is attached to a film 6 made of a polyimide resin and patterned to form leads 3
S was formed and a film carrier was prepared.

This film carrier is moved between the supply reel 100 and the take-up reel 500 by using a semiconductor encapsulation device as shown in FIG. 2, while mounting the semiconductor chip 5 to resin encapsulation inline. It was It should be noted that this device includes a supply reel 100 and a semiconductor chip mounting portion 200.
A sheet attaching section 300 for supplying and attaching the sealing resin sheets 1 and 2, a compression molding section 400, and a take-up reel 500.
And an after cure section (not shown). The compression molding portion 400 is, as shown in the enlarged view of the main part of FIG. 3, vertically movable frame-shaped dies 8a and 8b, and a press die formed so as to be fitted to the frame-shaped dies 8a and 8b. The press molds 9a and 9b are composed of the molds 9a and 9b, and are formed in accordance with the thickness of the sealing resin sheets 1 and 2 used.
The position of can be adjusted. That is, for example, when the active surface side sealing resin sheet 1 is thinner than the back surface side sealing resin sheet 2, the lower press die 9b has the same thickness of the sealing resin sheet 1, It is located lower than the case where 2 is arranged, and is formed so that pressurization is possible.

First, the semiconductor chips 5 having the chip sizes shown in Table 2 are connected face-down to the leads 3S of the film carrier 7 via the bumps 4 while the chip mounting portion 200 is aligned.

Thereafter, at the sheet adhering section 300, the sealing resin sheets 1 and 2 housed in the encapsulating resin sheet container 10 as shown in the enlarged view of FIG. 4 are mounted on the film carrier. It is attached to both sides of the semiconductor chip 5. Reference numeral 14 is a chip position detector, which detects a position of the semiconductor chip 5 by reading an alignment mark (not shown) previously formed on the film carrier 7 by the chip position detector.

Further, as shown in FIGS. 1 (a) to 1 (c), a compression molding section 400 equipped with a heater 402 is compression molded for 1 minute in a mold apparatus heated to 170.degree. . First, as shown in FIG. 1 (a), both the press die 9 and the frame die 8 are opened and the sealing resin sheets 1 and 2 are interposed therebetween.
The semiconductor chip 5 to which is attached is transferred to the frame-shaped mold 8 first.
A and 8b are closed and the film carrier is sandwiched and fixed (Fig. 1 (b)). After that, the resin sheets 1 and 2 for sealing are cured and molded while pressing the pressure from both sides while adjusting the positions of the upper and lower press dies 9a and 9b (FIG. 1 (c)). It should be noted that such a mold device is equipped with a vacuum system (not shown) for reducing the pressure inside the mold. Also, the package molded here
Table 2 also shows the size and thickness of the surface. After removing the molded package from the mold device and winding it using the winding reel 500, after-curing is performed at 180 ° C. for 4 hours in the after-curing section. Finally, by dividing the semiconductor device into individual semiconductor devices, a thin resin-sealed semiconductor device is completed.

According to such a method, when pressure molding is performed, pressure is applied in a well-balanced manner in the upper and lower directions, and the film carrier is favorably fixed by the frame-shaped mold. Therefore, the lead is deformed and the semiconductor in the package is deformed. The resin can be satisfactorily encapsulated without tilting of the chip or occurrence of burrs.

The resin sealing device is not limited to the one used in the above embodiment, and the sealing resin sheet may be attached and pressure-molded in the same device (location). . Here, a sealing resin sheet supply machine is provided close to the compression molding machine, and when the semiconductor chip mounted on the film carrier and conveyed reaches the position of the mold device, the sealing resin sheet supply machine is supplied. A resin sheet for sealing is attached to both sides of the semiconductor chip by a machine, and subsequently, while being heated by a heater at that position, it is pressure-molded by a mold device to perform resin sealing.

Further, the encapsulating resin sheet is placed on the tape and continuously supplied, and the encapsulating resin sheet is attached to both sides of the semiconductor chip mounted on the film carrier with the attaching portions. You may make it pressure-mold in a compression molding part. At this time, the tape after supplying the sealing resin sheet is wound up by the winding reel.

Also, this mold apparatus can be used as it is even when the thickness of the sealing resin sheet is changed or when three or more semiconductor chips are resin-sealed. Ideal for high-mix low-volume production.

Next, the deformation of the leads was measured using the resin-sealed semiconductor device thus obtained. The results are also shown in Table 2. The measurement was carried out by cutting a package in which the thickness of the sealing resin sheets above and below the semiconductor chip was changed in accordance with each chip size, and cutting the package vertically to the semiconductor chip. The measured points are the distance at which the lead has changed from a predetermined position and the distance between the lead and the edge (corner of the semiconductor chip). Here, both the examples and the comparative examples use the same resin composition shown in Table 1, and the comparative example 1 has the same ratio of the sheet thicknesses of the active side and the back side of Examples 1 and 2. In Comparative Example 2, the ratio of the sheet thicknesses of the active surface side and the back surface side of Example 3 was made equal, and in Comparative Example 3, the ratio of the sheet thicknesses of the active surface side and the back surface side of Example 4 was made equal. Equivalent to. When the thickness ratio of the encapsulating resin sheet is appropriate as in Examples 1 to 4 in Table 2, the deformation of the leads is very small, but as shown in Comparative Examples 1 to 3, the active surface side of the semiconductor chip is When the thickness of the sealing resin sheet used on the back side is the same, the deformation of the leads is considerably large.
Furthermore, in Examples 1 to 4, the distance between the lead and the edge was sufficiently large and there was no problem of edge touch, but in Comparative Examples 1 to 3, it was confirmed that edge touch occurred.

Next, the thermal shock resistance and the moisture resistance reliability of this example were measured. Here, the thermal shock resistance is obtained by repeating 50 to 500 cycles of cooling and heating cycles, each cycle of which is -65 ° C (30 minutes) to room temperature (5 minutes) to 150 ° C (30 minutes), for each of the created packages. The defect occurrence rate was measured by checking. Also,
Regarding the moisture resistance reliability, the produced package was left in a pressure cooker at 2.5 atmospheric pressure for 100 to 1000 hours, and then the defect occurrence rate was examined. As a result, Examples 1 to 4
In both cases, the defect occurrence rate was 0.

Next, in order to compare the difference in material composition of the encapsulating resin sheet for reference, thermal shock resistance and moisture resistance reliability were measured. As the samples, in addition to the sample 1 having the composition shown in Table 1 used in the above-mentioned examples, samples 2 to 7 shown in Table 3 were prepared.

[0048] The semiconductor chip, the package, and the resin sheet for sealing were the same as those shown in the column of Example 1 in Table 2 and pressure-molded in the same manner as in the above-mentioned example. The results are shown in Table 4. Again, regarding the thermal shock resistance, each created package is -6
A cooling / heating cycle in which 5 ° C. (30 minutes) to room temperature (5 minutes) to 150 ° C. (30 minutes) was set as one cycle was repeated 50 to 500 cycles, and the defect occurrence rate was measured by checking the operation characteristics of the device. Also, regarding the moisture resistance reliability, the prepared package is placed in a pressure cooker of 2.5 atm for 10
After standing for 0 to 1000 hours, the defect occurrence rate was examined.

[0049] As is clear from Table 4, the samples 1 and 2 using the biphenyl type epoxy and the samples 3 and 4 using the trifunctional type epoxy have excellent thermal shock resistance and moisture resistance reliability as compared with the samples 5 and 6. Is presenting. Further, in sample 7 using fused silica having a large maximum particle diameter, sufficient characteristics in thermal shock resistance and moisture resistance could not be obtained as compared with sample 1.

[0050]

As described above, according to the present invention, problems such as lead deformation and edge touch can be solved, and a highly reliable resin encapsulation having excellent thermal shock resistance and moisture resistance. A method of manufacturing a static semiconductor device can be provided.

[Brief description of drawings]

FIG. 1 is a sectional view showing a manufacturing process of a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 2 is a schematic view showing a semiconductor sealing device used in an embodiment of the present invention.

FIG. 3 is a sectional view showing a mold device used in an embodiment of the present invention.

FIG. 4 is a sectional view showing a sealing resin sheet container used in the present invention.

FIG. 5 is an explanatory diagram of the principle of the present invention.

FIG. 6 is a cross-sectional view showing a manufacturing process of a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 1 Sealing Resin Sheet 2 Sealing Resin Sheet 3 External Lead Structure 3S Lead 4 Bump 5 Semiconductor Chip 6 Film 7 Carrier 8 Frame-shaped Mold 9 Press Mold 14 Chip One Detector 100 Supply Reel 200 Semiconductor Chip Loading part 300 Sheet sticking part 400 Compression molding part 500 Winding reel

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akira Zenzumi 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Toshiba Research Institute Ltd.

Claims (2)

[Claims] 1. A first sealing resin sheet made of uncured resin is disposed on the active surface side of a semiconductor chip connected to an external lead structure, and a second sealing resin made of uncured resin is disposed on the back surface side. In a method for manufacturing a resin-sealed semiconductor device, in which a sealing resin sheet is arranged, and a sealing resin sheet made of the uncured resin is cured while being pressed onto the semiconductor chip, the method comprising: A method for manufacturing a resin-encapsulated semiconductor device, wherein the thickness of the second encapsulating resin sheet is made thicker than the thickness of the first encapsulating resin sheet on the active surface side of the semiconductor chip. 2. The first and second encapsulating resin sheets are encapsulating resin sheets containing a biphenyl type epoxy resin represented by the following formula (I):
7. A method for manufacturing a resin-encapsulated semiconductor device according to. (In the formula, R represents a hydrogen atom or a methyl group. Further, R2 R3 R5 R6 R2'R3'R5'R6 'are a hydrogen atom, a methyl group, an ethyl group, an isopropyl group, a butyl group, a phenyl group, and a chlorine group, respectively. And one kind selected from the group consisting of atoms and bromine atoms, which may be the same or different, and n represents an integer of 0 to 5.)