JPH061219B2 - Light receiving device - Google Patents
Light receiving deviceInfo
- Publication number
- JPH061219B2 JPH061219B2 JP60059867A JP5986785A JPH061219B2 JP H061219 B2 JPH061219 B2 JP H061219B2 JP 60059867 A JP60059867 A JP 60059867A JP 5986785 A JP5986785 A JP 5986785A JP H061219 B2 JPH061219 B2 JP H061219B2
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- receiving device
- light receiving
- photodiodes
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/18—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors using comparison with a reference electric value
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
- H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J2003/507—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors the detectors being physically selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Spectrometry And Color Measurement (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、入射光の波長検知を行う受光装置に関する。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a light receiving device for detecting the wavelength of incident light.
単結晶シリンコや非晶質シリコンを用いた色センサは従
来より知られている。入射光の波長を検知する従来の色
センサの構成例を第８図に示す。感光波長領域が異なる
二個の光起電力セル８１１，８１２はカソード端子を共
通に接地し、アノード端子はそれぞれ、光電流値を対数
圧縮する処理回路８２１，８２２に接続され、これら処
理回路８２１，８２２の出力が演算回路８３に入力され
るようになっている。演算回路８３では入力信号の加
算，減算あるいは割算等の処理が行われ、この出力によ
り入射光の波長検知が行われる。A color sensor using single crystal silinco or amorphous silicon has been conventionally known. FIG. 8 shows a configuration example of a conventional color sensor that detects the wavelength of incident light. The two photovoltaic cells 81 1 , 81 2 having different photosensitive wavelength regions have their cathode terminals commonly grounded, and their anode terminals are connected to processing circuits 82 1 , 82 2 for logarithmically compressing the photocurrent value. The outputs of the processing circuits 82 1 and 82 2 are input to the arithmetic circuit 83. The arithmetic circuit 83 performs processing such as addition, subtraction or division of the input signal, and the wavelength of the incident light is detected by this output.
このような従来装置は、波長検知のために複雑な回路を
必要とする、ということが大きい欠点であった。A major drawback of such a conventional device is that it requires a complicated circuit for wavelength detection.
本発明は上記の点に鑑みなされたもので、極めて簡単な
構成で入射光の波長検知を行ない得る受光装置を提供す
ることを目的とする。The present invention has been made in view of the above points, and an object of the present invention is to provide a light receiving device capable of detecting the wavelength of incident light with an extremely simple configuration.
本発明にかかる受光装置は、感光波長領域が一部重なる
二個の光起電力セルを同極性に直列接続し、各光起電力
セルの両端間にそれぞれ固定抵抗を接続すると共に、二
個の光起電力セル群の両端間に可変抵抗を接続して構成
される。このような構成として、ある入射光に対して、
二個の光起電力セルのいずれか一方の端子間電圧が零と
なるように可変抵抗の抵抗値を制御し、その抵抗値によ
り入射光の波長検知を行う。The light receiving device according to the present invention, two photovoltaic cells whose photosensitive wavelength regions partially overlap each other are connected in series in the same polarity, and fixed resistors are connected between both ends of each photovoltaic cell. A variable resistor is connected between both ends of the photovoltaic cell group. With such a configuration, for a certain incident light,
The resistance value of the variable resistor is controlled so that the voltage between the terminals of either one of the two photovoltaic cells becomes zero, and the wavelength of the incident light is detected by the resistance value.
本発明によれば、対数圧縮や演算等の複雑な処理を行う
回路を用いることなく、可変抵抗を制御して電圧検知を
行うという極めて簡単な構成で入射光の波長検知を行う
ことのできる受光装置が実現する。しかも本発明の受光
装置は、入射光強度によらず入射光波長を高い制度をも
って検知することができる。According to the present invention, it is possible to detect the wavelength of incident light with an extremely simple configuration in which the voltage is detected by controlling the variable resistance without using a circuit that performs complicated processing such as logarithmic compression or calculation. The device is realized. Moreover, the light receiving device of the present invention can detect the wavelength of incident light with high accuracy regardless of the intensity of incident light.
〔発明の実施例〕 具体的な実施例の説明に先立ち、本発明の受光装置の原
理的構成を説明する。[Embodiment of the Invention] Prior to the description of a specific embodiment, the basic configuration of the light-receiving device of the present invention will be described.
第１図はその原理的構成を示す等価回路である。第１図
において、１１１，１１２は光起電力セルとしてのフォ
トダイオードである。これら二個のフォトダイオード１
１１，１１２は感光波長領域が一部重なるものであり、
同極性に直列接続されている。１２１，１２２は各フォ
トダイオード１１１，１１２の固有の内部抵抗を示す。
これらのフォトダイオード１１１，１１２に対してそれ
ぞれの両端間に固定抵抗１３１，１３２が接続されてい
る。これらの固定抵抗１３１，１３２は内部抵抗１
２１，１２２に対して十分に小さい抵抗値を有するもの
とする。またこれらの二個のフォトダイオード１１１，
１１２群の両端間には可変抵抗１４が接続されている。FIG. 1 is an equivalent circuit showing its basic configuration. In FIG. 1, 11 1 and 11 2 are photodiodes as photovoltaic cells. These two photodiodes 1
1 1 and 11 2 are those in which the photosensitive wavelength regions partially overlap,
They are connected in series with the same polarity. Reference numerals 12 1 and 12 2 denote internal resistances of the photodiodes 11 1 and 11 2 , respectively.
Fixed resistors 13 1 and 13 2 are connected between both ends of these photodiodes 11 1 and 11 2 , respectively. These fixed resistors 13 1 and 13 2 are internal resistors 1
It has a sufficiently small resistance value with respect to 2 1 and 12 2 . In addition, these two photodiodes 11 1 ,
Variable resistor 14 is connected between the 11 two groups at both ends.
このようなフォトダイオード群に光が入射すると、各フ
ォトダイオード１１１，１１２にはそれぞれ光電流Δｉ
１，Δｉ２が発生する。この際、入射光波長と固定抵抗
１３１，１３２の抵抗値Ｒ１，Ｒ２及び可変抵抗１４の
抵抗値Ｒ３に応じて、各フォトダイオード１１１，１１
２の両端間にそれぞれ電圧ΔＶ１，ΔＶ２が発生する。
この電圧ΔＶ１，ΔＶ２は下式のように記述できる。When light is incident on such a photodiode group, a photocurrent Δi is applied to each of the photodiodes 11 1 and 11 2.
1 and Δi 2 are generated. At this time, in accordance with the resistance value R 3 of the resistance value R 1, R 2 and the variable resistor 14 of the incident light wavelength fixed resistors 13 1, 13 2, each photodiode 11 1, 11
Voltages ΔV 1 and ΔV 2 are generated across the two ends, respectively.
The voltages ΔV 1 and ΔV 2 can be described by the following equation.
（１），（２）式は、ｑΔＶｍ《ｎｍｋＴ（ｍ＝１，
２）なる条件が成立すれば、近似的に成立する式であ
る。ここでｑは電子電荷、ｎ１，ｎ２は各フォトダイオ
ードのｎ値、ｋはボルツマン定数、Ｔは絶対温度であ
る。 Equations (1) and (2) are expressed as qΔVm << nmkT (m = 1,
If the condition 2) is satisfied, the formula is approximately satisfied. Here, q is an electronic charge, n 1 and n 2 are n values of the respective photodiodes, k is a Boltzmann constant, and T is an absolute temperature.
（１），（２）式中のＷ１，Ｗ２及びＷ３はそれぞれ下
式で表わされる。W 1 , W 2 and W 3 in the equations (1) and (2) are respectively represented by the following equations.
ここで、ＩＯ１，ＩＯ２は各フォトダイオード１１１，
１１２の飽和電流値、ＲＳ１，ＲＳ２は各フォトダイオ
ードの内部抵抗１２１，１２２の抵抗値であり、Ｒ１，
Ｒ２及びＲ３はそれぞれ固定抵抗１３１，１３２及び可
変抵抗１４の抵抗値である。 Here, I O1 and I O2 are photodiodes 11 1 ,
11 second saturation current value, R S1, R S2 is the internal resistance 12 1, 12 2 of the resistance value of each of the photodiodes, R 1,
R 2 and R 3 are resistance values of the fixed resistors 13 1 and 13 2 and the variable resistor 14, respectively.
Ｒ１，Ｒ２がそれぞれＲＳ１，ＲＳ２に比べて十分に小
さいとすると、（３），（４），（５）式は通常の場合
近似的に下式で表わされる。Assuming that R 1 and R 2 are sufficiently smaller than R S1 and R S2 , respectively, the formulas (3), (4), and (5) are normally represented by the following formulas.
Ｗm＝１／Ｒm …（６） （ｍ＝１，２，３） 一方、単位時間当りＦ（λ）個のフォトンの単色光（波
長λ）が入射し、各フォトダイオード１１１，１１２の
収集効率がη１（λ），η２（λ）であるとすると、発
生する光電流Δｉ１，Δｉ２は、 Δｉ１＝ｑＦ（λ）η１（λ）…（７） Δｉ２＝ｑＦ（λ）η２（λ）…（８） で表わされる。Wm = 1 / Rm (6) (m = 1, 2, 3) On the other hand, monochromatic light (wavelength λ) of F (λ) photons is incident per unit time, and each of the photodiodes 11 1 and 11 2 receives Assuming that the collection efficiency is η 1 (λ) and η 2 (λ), the generated photocurrents Δi 1 and Δi 2 are Δi 1 = qF (λ) η 1 (λ) ... (7) Δi 2 = qF (Λ) η 2 (λ) ... (8)
（６），（７），（８）式を（１），（２）式に代入す
ると、ΔＶ１，ΔＶ２はそれぞれ下式で表わされる。Substituting the equations (6), (7) and (8) into the equations (1) and (2), ΔV 1 and ΔV 2 are represented by the following equations.
上式から明らかなように、例えばＲ１，Ｒ２を一定と
し、Ｒ３を可変すると、入射光波長λに応じてΔＶ１を
零にするＲ３、ΔＶ２を零にするＲ３がそれぞれ一意に
決まる。従ってこのような抵抗値Ｒ３を求めることによ
り、入射光の波長を検知することができることになる。 As apparent from the above equation, for example, the R 1, R 2 is constant, when the R 3 variable, to zero [Delta] V 1 in accordance with the incident light wavelength lambda R 3, R 3 to [Delta] V 2 zero each Uniquely determined. Therefore, the wavelength of the incident light can be detected by obtaining such a resistance value R 3 .
簡単のため、Ｒ１＝Ｒ２＝Ｒ０とし、Ｒ３を可変する場
合を考えると、ΔＶ１を零とする抵抗値Ｒ３は、 Ｒ３＝Ｒ０｛（η２（λ）／η１（λ））−１｝ ……（１１） となり、ΔＶ２を零にする抵抗値Ｒ３は、 Ｒ３＝Ｒ０｛（η１（λ）／η２（λ））−１｝ ……（１２） となる。つまりフォトダイオード１１１，１１２の互い
に重なる感光波長領域のうち、η２（λ）≧η１（λ）
である波長域にある波長はΔＶ１を零にする抵抗値Ｒ３
により検知され、η２（λ）≦η１（λ）である波長域
にある波長はΔＶ２を零にする抵抗値Ｒ３により検知さ
れる。For the sake of simplicity, considering the case where R 1 = R 2 = R 0 and R 3 is varied, the resistance value R 3 where ΔV 1 is zero is R 3 = R 0 {(η 2 (λ) / η 1 (λ) -1} (11), and the resistance value R 3 that makes ΔV 2 zero is R 3 = R 0 {(η 1 (λ) / η 2 (λ))-1}. … (12) That is, η 2 (λ) ≧ η 1 (λ) in the photosensitive wavelength regions where the photodiodes 11 1 and 11 2 overlap each other.
Is a resistance value R 3 that makes ΔV 1 zero.
The wavelength in the wavelength range of η 2 (λ) ≦ η 1 (λ) is detected by the resistance value R 3 that makes ΔV 2 zero.
以下に本発明の具体的な実施例を説明する。Specific examples of the present invention will be described below.
第２図はその受光装置の構造断面図である。Ａｌ等の裏
面電極２０を有するｐ型多結晶シリコン基板２２上にｎ
型微結晶シリコン膜を１０〜３０ｎｍ形成して第１のフ
ォトダイオード２１１を構成している。そして、この上
にＩＴＯ膜またはＳｎＯ２膜等の透明導電膜２４を介し
てｐ型非晶質シリコン膜２２を１０〜１００ｎｍ、ｉ型
非晶質シリコン膜２６を１０〜１００ｎｍ、ｎ型非晶質
シリコン膜２７を１０〜１００ｎｍ順次積層してＰＩＮ
型の第２のフォトダイオード２１２を構成している。こ
のように第１，第２のフォトダイオード２１１，２１２
は同極性に直列接続された状態で積層形成されている。
第２のダイオード２１２の上面（受光面）には反射防止
膜を兼ねたＩＴＯ膜２８を８０ｎｍ程度形成している。
２９，３０は金属端子電極である。電極２０と２９の間
には固定抵抗３１１、電極２９と３０の間には固定抵抗
３１１を接続し、また電極２０と３０の間には可変抵抗
３２を接続している。FIG. 2 is a structural sectional view of the light receiving device. N on a p-type polycrystalline silicon substrate 22 having a back electrode 20 such as Al.
A type microcrystalline silicon film is formed in a thickness of 10 to 30 nm to form the first photodiode 21 1 . Then, on this, a p-type amorphous silicon film 22 is 10 to 100 nm, an i-type amorphous silicon film 26 is 10 to 100 nm, and an n-type amorphous film through a transparent conductive film 24 such as an ITO film or a SnO 2 film. A silicon film 27 of 10 to 100 nm in this order
Constitute a second photodiode 21 2 types. In this way, the first and second photodiodes 21 1 and 21 2
Are laminated and connected in series with the same polarity.
On the upper surface (light receiving surface) of the second diode 212, an ITO film 28 that also serves as an antireflection film is formed to a thickness of about 80 nm.
29 and 30 are metal terminal electrodes. Fixed resistors 31 1 between the electrodes 20 and 29, between electrodes 29 and 30 connect the fixed resistor 31 1, also between the electrodes 20 and 30 are connected to the variable resistor 32.
なお非晶質シリコン膜及び微結晶質シリコン膜の形成
は、原料ガスを１３．５６ＭHzの高周波電力の印加によ
りグロー放電分解する周知の方法で行われる。ｐ型非晶
質シリコン膜を形成する時にはシラン（ＳｉＨ４）ガス
とジボラン（Ｂ２Ｈ６）ガスを、ｉ型非晶質シリコン膜
を形成する時にはシランガスのみを、またｎ型非晶質シ
リコン膜を形成するときにはシランガスとホスフィン
（ＰＨ３）ガスをそれぞれプラズマ反応炉中に導入すれ
ばよい。基板温度は１５０〜２５０℃の範囲に、またガ
ス圧は１〜２torrの範囲に設定すればよい。The amorphous silicon film and the microcrystalline silicon film are formed by a well-known method in which a raw material gas is decomposed by glow discharge by applying high frequency power of 13.56 MHz. Silane (SiH 4 ) gas and diborane (B 2 H 6 ) gas are used for forming the p-type amorphous silicon film, only silane gas is used for forming the i-type amorphous silicon film, and n-type amorphous silicon is used. When forming a film, silane gas and phosphine (PH 3 ) gas may be introduced into the plasma reactor. The substrate temperature may be set in the range of 150 to 250 ° C., and the gas pressure may be set in the range of 1 to 2 torr.
この様な構成として、可変抵抗３２の抵抗値を変化させ
て各フォトダイオード２１１，２１２の端子間電圧ΔＶ
１，ΔＶ２が零になるような波長を各抵抗値において求
めた結果を次に説明する。With such a configuration, the resistance value of the variable resistor 32 is changed to change the inter-terminal voltage ΔV of each of the photodiodes 21 1 and 21 2.
The result of obtaining the wavelength at which 1 and ΔV 2 become zero at each resistance value will be described below.
第３図は各フォトダイオード２１１，２１２の収集ス
ペクトルη１（λ），η２（λ）を示す。先に（１
１），（１２）式で説明したように本実施例では、第３
図の斜線を施した感光波長領域の波長を検知することが
できる。FIG. 3 shows the collected spectra η 1 (λ) and η 2 (λ) of the photodiodes 21 1 and 21 2 . First (1
As described in the equations (1) and (12), the third embodiment
It is possible to detect the wavelength in the photosensitive wavelength region shaded in the figure.
第４図は、（１１），（１２）式に従って第３図のη１
（λ），η２（λ）の値を用い、可変抵抗３２の抵抗値
Ｒ３とΔＶ１，ΔＶ２を零にする波長の関係を理論的に
計算して求めた結果である。第４図において、上側の曲
線はΔＶ１＝０となる場合の抵抗値Ｒ３と波長の関係、
下側の曲線はΔＶ２＝０となる場合の抵抗値Ｒ３と波長
の関係を示している。第４図の黒丸印は実測値である。
実測値は理論値とよく一致した。FIG. 4 shows η 1 of FIG. 3 according to the equations (11) and (12).
This is a result obtained by theoretically calculating the relationship between the resistance value R 3 of the variable resistor 32 and the wavelength that makes ΔV 1 and ΔV 2 zero by using the values of (λ) and η 2 (λ). In FIG. 4, the upper curve shows the relationship between the resistance value R 3 and the wavelength when ΔV 1 = 0.
The lower curve shows the relationship between the resistance value R 3 and the wavelength when ΔV 2 = 0. The black circles in FIG. 4 are actually measured values.
The measured value was in good agreement with the theoretical value.
以上のようにこの実施例によれば、各フォトダイオード
端子間電圧ΔＶ１あるいはΔＶ２を零にする可変抵抗の
抵抗値Ｒ３と入射光波長は対応するため、このような抵
抗値Ｒ３を求めることによって、従来のように複雑な処
理回路を構成することなく簡便に入射光波長を検知する
ことができる。As described above, according to this embodiment, since the resistance value R 3 of the variable resistor that makes the voltage ΔV 1 or ΔV 2 between the photodiode terminals zero corresponds to the incident light wavelength, such a resistance value R 3 is set. By determining, the incident light wavelength can be easily detected without constructing a complicated processing circuit as in the conventional case.
上記実施例では、役４００〜７００ｎｍの可視光の波長
を検知する場合を説明したが、感光波長領域が一部異な
るフォトダイオードの組合わせを種々変えることによ
り、波長の検知範囲を任意に設定することができる。例
えばフォトダイオードの半導体材料として、Ｓｉ，Ｇ
ｅ，ＡｌＡｓ，ＡｌＳｂ，ＧａＰ，ＧａＡｓ，ＧａＡｌ
Ａｓ，ＧａＳｂ，ＩｎＰ，ＩｎＳｂ，ＺｎＳ，ＺｎＳ
ｅ，ＺｎＴｅ，ＣｄＳ，ＣｄＴｅ，ＳｉＣ，ＰｂＴｅ，
Ｃｎ２Ｓ，ＣｄＳｅ等を適当に組合わせれば、それぞれ
の禁制帯幅に応じた任意の波長に感応するフォトダイオ
ード対が得られる。In the above embodiment, the case of detecting the wavelength of visible light of 400 to 700 nm has been described, but the detection range of the wavelength is arbitrarily set by changing various combinations of the photodiodes having different photosensitive wavelength regions. be able to. For example, as a semiconductor material of a photodiode, Si, G
e, AlAs, AlSb, GaP, GaAs, GaAl
As, GaSb, InP, InSb, ZnS, ZnS
e, ZnTe, CdS, CdTe, SiC, PbTe,
By appropriately combining Cn 2 S, CdSe, etc., a photodiode pair sensitive to an arbitrary wavelength corresponding to each forbidden band width can be obtained.
また上記実施例では二個のフォトダイオードを積層構造
としたが、二個のフォトダイオードを所定の基板上に平
面的に配列形成して直列接続して同様の受光装置を構成
することもできる。Further, in the above-mentioned embodiment, the two photodiodes have a laminated structure, but the two photodiodes may be arranged in a plane on a predetermined substrate and connected in series to form a similar light receiving device.
次に本発明の応用例を説明する。第１図において可変抵
抗１４の抵抗値が十分におきい場合を考える。このとき
フォトダイオード１１１の光電流Δｉ１は固定抵抗１３
１にのみ流れ、フォトダイオード１１２の光電流Δｉ２
は固定抵抗１３２にのみ流れる。即ち各フォトダイオー
ドの起電力は互いに他方のフォトダイオードの端子間電
圧に影響を与えることがなく、それぞれの光電流路は互
いに独立の閉回路と見なすことができる。そうすると、
各フォトダイオード１１１，１１２の波長感度領域を異
ならせておくことにより、これに光を入射して各フォト
ダイオードの端子電圧ΔＶ１，ΔＶ２を測定すれば、入
射光が単色光でない場合にその波長成分を検知すること
ができる。Next, an application example of the present invention will be described. Consider the case where the resistance value of the variable resistor 14 is sufficiently large in FIG. Photocurrent .DELTA.i 1 of the photodiode 11 1 this time fixed resistor 13
It flows only in 1, photodiode 11 and second optical current .DELTA.i 2
Flows only the fixed resistor 13 2. That is, the electromotive force of each photodiode does not affect the voltage between the terminals of the other photodiode, and the photoelectric channels can be regarded as independent closed circuits. Then,
When the wavelength sensitivity regions of the photodiodes 11 1 and 11 2 are made different, light is incident on the photodiodes and the terminal voltages ΔV 1 and ΔV 2 of the photodiodes are measured. When the incident light is not monochromatic light, That wavelength component can be detected.
第５図はこの原理を利用して、広い波長域で波長分布の
測定ができるように構成した受光装置の等価回路であ
る。即ち、感応波長域がそれぞれ異なる複数のフォトダ
イオード５１１，５１２，…，５１ｎを同極性に直列接
続し、それぞれに抵抗５２１，５２２，…，５２ｎを接
続している。このように構成して各フォトダイオードの
端子電圧ΔＶ１，ΔＶ２，…，ΔＶｎを測定すれば、入
射光の波長分布を測定することができる。FIG. 5 is an equivalent circuit of a light receiving device configured to measure the wavelength distribution in a wide wavelength range by utilizing this principle. That is, a plurality of photodiodes 51 1 , 51 2 , ..., 51n having different sensitive wavelength regions are connected in series with the same polarity, and resistors 52 1 , 52 2 ,. If the terminal voltages ΔV 1 , ΔV 2 , ..., ΔVn of the respective photodiodes are measured in this configuration, the wavelength distribution of incident light can be measured.
第５図の原理を用い、各種の波長成分を含む光から、３
原色である赤（Ｒ），緑（Ｇ），青（Ｂ）の各成分を分
割するようにした受光装置の具体的な構成例を第６図に
示す。６０はステンレスなどの導電性基板であり、この
上にそれぞれ青，緑，赤に感応するフォトダイオード６
１Ｒ，６１Ｇ，６１Ｂが積層形成されている。６２Ｒ，
６２Ｇ，６２Ｂは透明導電膜であり、各フォトダイオー
ドを接続する役割と入射光を下方に透過させる役割を果
たす。６３は入射光量を調節するためのフィルタであ
り、例えばニュートラル・デンシティ・フィルタであ
る。入射光量が強くなり、光電流が大きくなった場合、
フォトダイオードの両端にダイオード電流が無視できな
くなる程度の順方向電圧が発生するため、これを防ぐよ
うに必要に応じてこのようなフィルタ６３を設ける。６
４Ｒ，６４Ｇ，６４Ｂはそれぞれ端子電極であり、これ
らの各電極を用いて図示のように各フォトダイオードの
両端間に抵抗６５Ｒ，６５Ｇ，６５Ｂを接続している。From the light containing various wavelength components, the principle of FIG.
FIG. 6 shows a specific configuration example of a light receiving device in which each of the primary colors red (R), green (G), and blue (B) is divided. Reference numeral 60 is a conductive substrate such as stainless steel, on which the photodiodes 6 sensitive to blue, green and red are provided.
1R, 61G, and 61B are laminated. 62R,
Reference numerals 62G and 62B denote transparent conductive films which serve to connect the photodiodes and to transmit incident light downward. Reference numeral 63 is a filter for adjusting the amount of incident light, for example, a neutral density filter. When the amount of incident light becomes strong and the photocurrent becomes large,
Since a forward voltage to the extent that the diode current cannot be ignored is generated at both ends of the photodiode, such a filter 63 is provided as necessary to prevent this. 6
Reference numerals 4R, 64G, and 64B are terminal electrodes, and resistors 65R, 65G, and 65B are connected between both ends of each photodiode as shown in the figure by using these electrodes.
各フォトダイオード６１Ｒ，６１Ｇ，６１Ｂは、この実
施例ではグロー放電分解による非晶質シリコン膜を用い
たＰＩＮダイオードとして構成している。この場合各フ
ォトダイオードにそれぞれ、青，緑，赤に感応する収集
効率スペクトルを持たせるために、ｉ型層の光学的バン
ドギャップと厚みを調節する。例えばフォトダイオード
６１Ｒにおいては、ｉ層の光学的バンドギャップＥｇを
２．１ｅＶ以上、厚みｄを１５０ｎｍ以下とし、フォト
ダイオード６１Ｇにおいてはｉ層の光学的バンドギャッ
プＥｇを２．１〜１．８ｅＶ、厚みｄを５００ｎｍ以下
とし、フォトダイオード６１Ｂにおいてはｉ層の光学的
バンドギャップＥｇを１．８〜１．６ｅＶ、厚みｄを１
０００ｎｍ以下とする。光学的バンドギャップの調節
は、主原料であるシランガスにゲルマン（ＧｅＨ４）ガ
ス、メタン（ＣＨ４）ガス、アンモニア（ＮＨ３）ガ
ス、水素（Ｈ２）ガスなどを混合してグロー放電分解を
行うことにより可能である。更に各フォトダイオードの
ｐ型層、ｎ型層の光学的バンドギャップ及び膜厚を調節
することにより、下方に位置するフォトダイオードの収
集効率スペクトルの形状、特に短波長側形状を所望の形
状に修正することができる。Each of the photodiodes 61R, 61G, 61B is configured as a PIN diode using an amorphous silicon film by glow discharge decomposition in this embodiment. In this case, the optical bandgap and thickness of the i-type layer are adjusted so that each photodiode has a collection efficiency spectrum sensitive to blue, green, and red. For example, in the photodiode 61R, the optical bandgap Eg of the i layer is 2.1 eV or more and the thickness d is 150 nm or less, and in the photodiode 61G, the optical bandgap Eg of the i layer is 2.1 to 1.8 eV. In the photodiode 61B, the thickness d is set to 500 nm or less, the optical band gap Eg of the i layer is 1.8 to 1.6 eV, and the thickness d is 1
000 nm or less. The optical band gap is adjusted by glow discharge decomposition by mixing germane (GeH 4 ) gas, methane (CH 4 ) gas, ammonia (NH 3 ) gas, hydrogen (H 2 ) gas, etc. with silane gas which is the main raw material. It is possible by doing. Furthermore, by adjusting the optical bandgap and film thickness of the p-type layer and n-type layer of each photodiode, the shape of the collection efficiency spectrum of the photodiodes located below, especially the shape on the short wavelength side, is corrected to the desired shape. can do.
このようにしてこの実施例では、各フォトダイオード６
１Ｒ，６１Ｇ，６１Ｂは、それぞれ青色（λ〜４５０ｎ
ｍ），緑色（λ〜５５０ｎｍ），赤色（λ〜６５０ｎ
ｍ）の領域内に収集効率スペクトルの大部分が限定さ
れ、かつそのスペクトルのピーク値がほぼ等しくなるよ
うに設定される。Thus, in this embodiment, each photodiode 6
1R, 61G and 61B are each blue (λ to 450n
m), green (λ to 550 nm), red (λ to 650 n)
Most of the collection efficiency spectrum is limited within the region m), and the peak values of the spectrum are set to be substantially equal.
第７図は、この実施例の受光装置の各フォトダイオード
６１Ｒ，６１Ｇ，６１Ｂの収集効率スペクトルη
Ｒ（λ），ηＧ（λ），ηＢ（λ）と、この受光装置に
光を照射したときの各フォトダイオードの端子電圧スペ
クトルΔＶＲ，ΔＶＧ，ΔＶＢである。実験は、各フォ
トダイオードの端子間に接続する抵抗６５Ｒ，６５Ｇ，
６５Ｂの抵抗値をＲＲ＝ＲＧ＝ＲＢ＝５０Ωとし、全波
長領域で単位時間当り一定フォトン数Ｆ＝１×１０１３
（／sec ）の単色光を照射して行った。また実験では
入射光量を調節するフィルタ６３は設けていない。FIG. 7 shows the collection efficiency spectrum η of each photodiode 61R, 61G, 61B of the light receiving device of this embodiment.
R (λ), η G (λ), η B (λ) and the terminal voltage spectra ΔV R , ΔV G , and ΔV B of each photodiode when the light receiving device is irradiated with light. In the experiment, resistors 65R, 65G, connected between the terminals of each photodiode,
The resistance value of 65B is R R = R G = R B = 50Ω, and the constant photon number F = 1 × 10 13 per unit time in all wavelength regions.
(/ Sec) monochromatic light was irradiated. Further, in the experiment, the filter 63 for adjusting the amount of incident light is not provided.
このようにこの受光装置を用いれば、任意の入射光から
３原色信号を取出すことができる。勿論、入射光強度と
発生電圧は比例するので、発生電圧の大きさにより各色
成分信号の強度を決定することができる。そしてこの実
施例によれば、青，緑，赤の各色フィルタを組合わせて
３原色信号を得る従来の装置の比べて、１単位受光素子
の面積を小さくした色センサを実現することができる。Thus, by using this light receiving device, the three primary color signals can be extracted from arbitrary incident light. Of course, since the incident light intensity is proportional to the generated voltage, the intensity of each color component signal can be determined by the magnitude of the generated voltage. In addition, according to this embodiment, it is possible to realize a color sensor in which the area of one unit light receiving element is smaller than that of a conventional device that obtains three primary color signals by combining filters of blue, green and red.
第１図は本発明の受光装置の原理構成を説明するための
等価回路図、第２図は本発明の一実施例の受光装置の構
成を示す図、第３図はその受光装置における各フォトダ
イオードの収集効率スペクトルを示す図、第４図はその
受光装置による各フォトダイオードの端子間電圧を零に
する可変抵抗の抵抗値と波長の関係を示す図、第５図は
本発明の応用した受光装置の原理構成を説明するための
図、第６図はその具体的な構成例を示す図、第７図は同
じくその特性を示す図、第８図は従来の受光装置の構成
例を示す図である。 １１１，１１２…フォトダイオード、１２１，１２２…
内部抵抗、１３１，１３２…固定抵抗、１４…可変抵
抗、２０…裏面電極、２１１，２１２…フォトダイオー
ド、２２…ｐ型多結晶シリコン基板、２３…ｎ型微結晶
シリコン膜、２４…透明導電膜、２５…ｐ型非晶質シリ
コン膜、２６…ｉ型非晶質シリコン膜、２７…ｎ型非晶
質シリコン膜、２８…透明導電膜、２９，３０…端子電
極、３１１，３１２…固定抵抗、３２…可変抵抗。FIG. 1 is an equivalent circuit diagram for explaining the principle configuration of the light receiving device of the present invention, FIG. 2 is a diagram showing the configuration of the light receiving device of one embodiment of the present invention, and FIG. 3 is each photo in the light receiving device. FIG. 4 is a diagram showing a collection efficiency spectrum of a diode, FIG. 4 is a diagram showing a relation between a resistance value of a variable resistor for making the voltage between terminals of each photodiode by the light receiving device zero and wavelength, and FIG. FIG. 6 is a diagram for explaining the principle configuration of a light receiving device, FIG. 6 is a diagram showing a specific configuration example thereof, FIG. 7 is a diagram showing its characteristics, and FIG. 8 is a configuration example of a conventional light receiving device. It is a figure. 11 1 , 11 2 ... Photodiode, 12 1 , 12 2 ...
Internal resistance, 13 1 , 13 2 ... Fixed resistance, 14 ... Variable resistance, 20 ... Back electrode, 21 1 , 21 2 ... Photodiode, 22 ... P-type polycrystalline silicon substrate, 23 ... N-type microcrystalline silicon film, 24 ... transparent conductive film, 25 ... p-type amorphous silicon film, 26 ... i-type amorphous silicon film, 27 ... n-type amorphous silicon film, 28 ... transparent conductive film, 29, 30 ... terminal electrode, 31 1 , 31 2 ... Fixed resistance, 32 ... Variable resistance.
Claims (3)
一部重なる二個の光起電力セルと、各光起電力セルの両
端間にそれぞれ接続された固定抵抗と、二個の光起電力
セル群の両端間に接続された可変抵抗とを備え、入射光
に対して、前記可変抵抗の抵抗値を前記二個の光起電力
セルのうち一方の両端間電圧が零となるように制御し
て、その時の可変抵抗の抵抗値から入射光の波長を求め
るようにしたことを特徴とする受光装置。1. Photovoltaic cells connected in series with the same polarity and having photosensitive wavelength regions partially overlapping, fixed resistors respectively connected between both ends of each photovoltaic cell, and two light cells. A variable resistor connected between both ends of the electromotive force cell group so that the resistance value of the variable resistor with respect to incident light is such that the voltage across one of the two photovoltaic cells becomes zero. And a wavelength of incident light is obtained from the resistance value of the variable resistance at that time.
形成されている特許請求の範囲第１項記載の受光装置。2. The light receiving device according to claim 1, wherein the two photovoltaic cells are laminated on a predetermined substrate.
的に配列形成されている特許請求の範囲第１項記載の受
光装置。3. The light receiving device according to claim 1, wherein the two photovoltaic cells are arranged in a plane on a predetermined substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60059867A JPH061219B2 (en) | 1985-03-25 | 1985-03-25 | Light receiving device |
| US06/794,794 US4677289A (en) | 1984-11-12 | 1985-11-04 | Color sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60059867A JPH061219B2 (en) | 1985-03-25 | 1985-03-25 | Light receiving device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61217727A JPS61217727A (en) | 1986-09-27 |
| JPH061219B2 true JPH061219B2 (en) | 1994-01-05 |
Family
ID=13125546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60059867A Expired - Lifetime JPH061219B2 (en) | 1984-11-12 | 1985-03-25 | Light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH061219B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
| ATE408961T1 (en) * | 2003-10-13 | 2008-10-15 | Noble Peak Vision Corp | IMAGE SENSOR COMPRISING A SILICON SUBSTRATE AND A SILICON CIRCUIT INTEGRATED ISOLATED GERMANIUM PHOTODETECTORS |
| EP1643565B1 (en) * | 2004-09-30 | 2020-03-04 | OSRAM Opto Semiconductors GmbH | Radiation detector |
| JP6299238B2 (en) * | 2014-01-30 | 2018-03-28 | 富士通株式会社 | Image sensor |
-
1985
- 1985-03-25 JP JP60059867A patent/JPH061219B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61217727A (en) | 1986-09-27 |
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