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JPH0615426B2 - Bonded body of SiC or Si (bottom 3) N (bottom 4) base material and Mo or W base material - Google Patents
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JPH0615426B2 - Bonded body of SiC or Si (bottom 3) N (bottom 4) base material and Mo or W base material - Google Patents

Bonded body of SiC or Si (bottom 3) N (bottom 4) base material and Mo or W base material

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Publication number
JPH0615426B2
JPH0615426B2 JP19608485A JP19608485A JPH0615426B2 JP H0615426 B2 JPH0615426 B2 JP H0615426B2 JP 19608485 A JP19608485 A JP 19608485A JP 19608485 A JP19608485 A JP 19608485A JP H0615426 B2 JPH0615426 B2 JP H0615426B2
Authority
JP
Japan
Prior art keywords
sic
coating layer
plating
base material
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP19608485A
Other languages
Japanese (ja)
Other versions
JPS6259577A (en
Inventor
保博 深谷
章三 平井
利和 新川
敬三 塚越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
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Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP19608485A priority Critical patent/JPH0615426B2/en
Publication of JPS6259577A publication Critical patent/JPS6259577A/en
Publication of JPH0615426B2 publication Critical patent/JPH0615426B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、セラミツクスと金属、特にSi又はSi3N
Mo又はWの接合方法に関する。
TECHNICAL FIELD The present invention relates to a method for joining ceramics and metal, particularly Si or Si 3 N 4 and Mo or W.

〔従来の技術〕[Conventional technology]

Mo又はW基材とSiC又はSi3N基材とは、直接接合す
ることによつては勿論Cu+Co合金ろうを介しての接
合によつても高強度継手は得られない。これはSiC又はS
i3NとMo又はWとの接合反応性、SiC又はSi3NとC
u+Co合金ろうとの接合反応性が不十分なためであ
る。
A high-strength joint cannot be obtained by directly joining the Mo or W base material and the SiC or Si 3 N 4 base material, as well as by joining through the Cu + Co alloy brazing material. This is SiC or S
Bonding reactivity between i 3 N 4 and Mo or W, SiC or Si 3 N 4 and C
This is because the bonding reactivity with the u + Co alloy brazing is insufficient.

Mo又はWとSiC又はSi3Nの継手は、SiC又はSi3N
すぐれた耐熱性に律則されて、高温で使用されることが
多い。且つ、その場合、酸化雰囲気のケースが多く、そ
うした環境下では、Mo又はWは、激しい酸化を起こ
し、使用に耐えられない。従来法では、こういつた問題
点には一切考慮が払われておらず、高温酸化雰囲気下で
は、得られた継手が使用に耐え得ず、実用には達しない
のが現状である。
The joint of Mo or W and SiC or Si 3 N 4 is often used at high temperature because of the excellent heat resistance of SiC or Si 3 N 4 . In that case, in many cases, an oxidizing atmosphere is used, and in such an environment, Mo or W causes severe oxidation and cannot be used. In the conventional method, no consideration has been given to such problems, and in the high temperature oxidizing atmosphere, the obtained joint cannot withstand use and is not in practical use at present.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

本発明の目的は、Mo又はWとSiC又はSi3Nを適正な
インサート材を用いることにより、強固に接合する方法
及び副次的にMo,Wの耐酸化性を付与する方法を提供
するものである。
An object of the present invention is to provide a method for firmly joining Mo or W and SiC or Si 3 N 4 by using an appropriate insert material, and a method for secondarily providing oxidation resistance of Mo and W. It is a thing.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の第1発明は、Mo又はW基材、該基材に被
着される、第1のCr被覆層、該Cr被覆層に被着さ
れるCr,Ni及びCuのうちの少くとも1種の第2の
金属被覆層、及び該第2の金属被覆層に接して固着さ
れるSiC又はSi3N基材よりなることを特徴とするSiC又
はSi3N基材とMo又はW基材との接合体であり、第1
のCr被覆層及び第2の金属被覆層がMo又はW基材の
全表面に被覆され、かつ第2の金属被覆層の最外層がC
r拡散メツキ層であることを好ましい実施態様とするも
のである。
A first invention of the present invention is a Mo or W substrate, a first Cr coating layer deposited on the substrate, and at least one of Cr, Ni and Cu deposited on the Cr coating layer. Second metal coating layer, and a SiC or Si 3 N 4 base material fixed in contact with the second metal coating layer, and a SiC or Si 3 N 4 base material and Mo or W It is a bonded body with a base material, and
Cr coating layer and the second metal coating layer are coated on the entire surface of the Mo or W substrate, and the outermost layer of the second metal coating layer is C
A preferred embodiment is an r-diffused plating layer.

又、本発明の第2発明は、Mo又はW基材、該基材
に被着される第1のCr被覆層、該Cr被覆層に被着
されるCr,Ni及びCuのうちの少くとも1種の第2
の金属被覆層、該第2の金属被覆層に被着されるNi
ろう、Cuろう及びAgろう材のうちの少くとも1種の
ろう材被覆層及び該ろう材被覆層に接して固着される
SiC又はSi3N基材よりなるなることを特徴とするSiC又
はSi3N基材とMo又はW基材との接合体であり、第1
のCr被覆層及び第2の金属被覆層がMo又はW基材の
全評面に被覆され、かつ第2の金属被覆層の最外層がC
r拡散メツキ層であることを好ましい実施態様とするも
のである。
A second invention of the present invention is a Mo or W substrate, a first Cr coating layer deposited on the substrate, and at least one of Cr, Ni and Cu deposited on the Cr coating layer. One kind of second
Metal coating layer, Ni deposited on the second metal coating layer
At least one brazing material, a brazing material, a Cu brazing material, and an Ag brazing material, and a layer to be fixed in contact with the brazing material coating layer
A conjugate of the SiC or Si 3 N 4 SiC or Si 3 N 4 base material and Mo or W substrate characterized by comprising consisting substrate, first
Cr coating layer and the second metal coating layer are coated on the entire evaluation surface of the Mo or W substrate, and the outermost layer of the second metal coating layer is C.
A preferred embodiment is an r-diffused plating layer.

なお上記第1,第2発明において、第2の金属被覆層が
Crである場合には、第1のCr被覆層と第2のCr被
覆層を合せたCr単層被覆層であつてもよい。
In addition, in the said 1st, 2nd invention, when the 2nd metal coating layer is Cr, you may be a Cr single-layer coating layer which combined the 1st Cr coating layer and the 2nd Cr coating layer. .

かかる本発明は、セラミツクスガスタービン静翼のセラ
ミツクスと金属の接合法等に適用できる。
The present invention can be applied to, for example, a method of joining ceramics and a metal of a ceramic gas turbine vane.

〔作用〕[Action]

第1発明 Mo又はWとSiC又はSi3Nの接合において、Mo又は
W面に脆い金属間化合物を生成せず、互いに固落して強
固な冶金的接合の得られるCrを、そして接合性の極め
て悪いSiC又はSi3N面にはSiC又はSi3N中に存在する
遊離Siに着目して、このSiとすぐれた接合を成就す
るNi,CuおよびCrとのいずれか1つをインサート材とし
て配設して、真空中あるいはArガス中などの非酸化性
雰囲気中で加熱、加圧して固相接合することで、高強度
の継手強度を得ることができる。なお、上記インサート
材を用いると、インサート材組合せで、CrとNi、C
rとCu、及びCr-Crの接合組合せがでてくるが、これ
らは互いに固溶しあい、すぐれた冶金的接合ができる組
合せであり、良好な継手を得ることができる。
First invention In the bonding of Mo or W and SiC or Si 3 N 4 , Cr that does not form a brittle intermetallic compound on the Mo or W surface and solidifies to obtain a strong metallurgical bond, and insert the very poor SiC or Si 3 N 4 surfaces by focusing on free Si present in SiC or Si 3 N 4, Ni to fulfill the bonding excellent this Si, any one of Cu and Cr As a material, a high-strength joint strength can be obtained by heating and pressurizing in a non-oxidizing atmosphere such as vacuum or Ar gas to perform solid-phase joining. When the above-mentioned insert materials are used, the combination of insert materials is Cr, Ni, C
A joint combination of r, Cu, and Cr-Cr appears, but these are solid-solved with each other and are capable of excellent metallurgical joining, and a good joint can be obtained.

第1発明の一実施態様を第1図によつて詳述する。One embodiment of the first invention will be described in detail with reference to FIG.

先ず、Mo又はW基材1にCr被覆層3を配設する。
{工程A−(a);Cr単層被覆層の場合)その方法は、
Crメツキ、Cr蒸着、Cr溶射等による。
First, the Cr coating layer 3 is provided on the Mo or W base material 1.
{Step A- (a); In the case of Cr single layer coating layer)
By Cr plating, Cr vapor deposition, Cr thermal spraying, etc.

あるいは、更にCr被覆層3の上に、Ni被覆層4また
はCu被覆層5を配設する。(工程Aの(b))その方法
は、NiまたはCuメツキ、NiまたはCu蒸着、Niま
たはCu溶射、NiまたはCu箔の配設等による。
Alternatively, the Ni coating layer 4 or the Cu coating layer 5 is further disposed on the Cr coating layer 3. (Step A (b)) The method is by Ni or Cu plating, Ni or Cu vapor deposition, Ni or Cu thermal spraying, disposition of Ni or Cu foil, or the like.

Mo又はW基材1上に上記インサート材を配設した後、
これにSiC又はSi3N基材2を重ね合せ、真空中あるい
はAr中で、Mo又はW、SiC又はSi3Nおよびインサ
ート材のいずれの融点よりも低い温度に加熱し、加圧し
て固相接合する。(工程B) 第2発明 Mo又はWとSiC又はSi3Nの接合において、Mo又は
W面に脆い金属間化合物を生成せず、互いに固溶して強
固な冶金的接合の得られるCr、及び使用するろう材
(Niろう、Cuろう、Agろう)とろう付性にすぐれ
るNi又はCuをこのCrの上に積層して結合したあ
と、SiC又はSi3N中に存在する遊離Siと良好なろう
付が行いうるNiろう、CuろうまたはAgろうを用い
てSiC又はSi3Nとをろう付することで、高強度の継手
強度を得ることができる。
After disposing the insert material on the Mo or W base material 1,
The SiC or Si 3 N 4 base material 2 is superposed on this, heated in vacuum or Ar to a temperature lower than the melting point of any of Mo or W, SiC or Si 3 N 4 and the insert material, and pressurized. Solid phase bonding. (Step B) Second Invention In joining Mo or W and SiC or Si 3 N 4 , Cr that does not form a brittle intermetallic compound on the Mo or W surface and forms a solid solution with each other to obtain a strong metallurgical bond, And a brazing filler metal (Ni brazing, Cu brazing, Ag brazing) to be used and Ni or Cu excellent in brazing property laminated on this Cr and bonded, and then free Si existing in SiC or Si 3 N 4. By brazing SiC or Si 3 N 4 with Ni braze, Cu braze, or Ag braze, which enables good brazing, high joint strength can be obtained.

なお、上記インサート材を用いると、インサート組合せ
でCrとNi、CrとCu、Crと上記ろう材、Niと
上記ろう材、Cuと上記ろう材の接合組合せがでてくる
が、これらは互いに固溶しあうか、脆い金属間化合物を
生成しないですぐれた冶金的接合ができる組合せであ
り、良好な継手を得ることができる。
When the above-mentioned insert material is used, a combination of Cr and Ni, Cr and Cu, Cr and the above brazing material, Ni and the above brazing material, and Cu and the above brazing material can be obtained by the combination of the inserts. It is a combination that enables excellent metallurgical bonding without melting or forming a brittle intermetallic compound, and a good joint can be obtained.

第2発明の一実施態様を第2図によつて詳述する。One embodiment of the second invention will be described in detail with reference to FIG.

先ず、Mo又はW基材1にCr被覆層3を配設する。
{工程A−(a);Cr単層被覆層の場合}その方法は、
Crメツキ、Cr蒸着、Cr溶射等による。
First, the Cr coating layer 3 is provided on the Mo or W base material 1.
{Step A- (a); In the case of Cr single-layer coating layer}
By Cr plating, Cr vapor deposition, Cr thermal spraying, etc.

あるいは、更にCr被覆層3の上に、Ni被覆層4また
はCu被覆層5を配設する。(工程Aの(b))その方法
は、NiまたはCuメツキ、NiまたはCu蒸着、Niま
たはCu溶射、NiまたはCu箔の配設等による。
Alternatively, the Ni coating layer 4 or the Cu coating layer 5 is further disposed on the Cr coating layer 3. (Step A (b)) The method is by Ni or Cu plating, Ni or Cu vapor deposition, Ni or Cu thermal spraying, disposition of Ni or Cu foil, or the like.

Mo又はW基材1上に上記インサート材を配設したもの
を、真空中あるいはAr中で、Mo又はWおよびインサ
ート材のいずれの融点よりも低い温度に加熱、加圧して
インサート材とMo又はW基材1を固相接合する。
The Mo or W base material 1 on which the above-mentioned insert material is arranged is heated in a vacuum or Ar to a temperature lower than the melting point of either Mo or W and the insert material, and pressurized to insert material and Mo or The W base material 1 is solid-phase bonded.

次いで、上記インサート材が接合したMo又はW基材と
SiC又はSi3N基材2とをNiろう、Cuろう又はAg
ろう6を用いて、真空中あるいはAr中でろう付する。
(工程B) 第1発明の好ましい態様 Mo又はWとSiC又はSi3Nの接合において、Mo又は
Wと接合面を含む全表面に、前述したMo又はWと良好
な冶金的接合の得られるCrをコーテイングしたあと、
その上にCrと固溶し合つてすぐれた接合性を示すNi
を全面コーテイングし、次いで、Niコーテイング層全
面にCr拡散メツキ処理したあと、SiC又はSi3Nとを
真空中あるいはAr中で加熱、加圧して固相接合するこ
とで、高強度の継手強度を得ることができる。
Then, with the Mo or W base material to which the insert material is joined
Ni or Cu braze or Ag with SiC or Si 3 N 4 substrate 2
Brazing is performed using a braze 6 in vacuum or in Ar.
(Step B) Preferred Embodiment of First Invention In joining Mo or W with SiC or Si 3 N 4 , good metallurgical joining with Mo or W can be obtained on the entire surface including Mo or W and the joining surface. After coating Cr,
Ni, which forms a solid solution with Cr and has excellent bondability,
On the whole surface of the Ni coating layer and then Cr diffusion plating treatment on the entire surface of the Ni coating layer. Then, SiC or Si 3 N 4 is heated or pressurized in vacuum or Ar to perform solid-phase bonding to achieve high joint strength. Can be obtained.

この方法の特徴は、Mo又はWの最表面にNi・Cr合金層
(Niコーテイング層にCr拡散メツキ処理することで
得られる)が生成し、耐酸化性はもちろん、各種の高温
耐食性にすぐれ、Mo又はWとSiC又はSi3N継手の適
用範囲を大きく拡大することにある。
The characteristic of this method is that a Ni / Cr alloy layer (obtained by subjecting the Ni coating layer to Cr diffusion plating treatment) is formed on the outermost surface of Mo or W, and it has excellent oxidation resistance as well as various high temperature corrosion resistance, It is to greatly expand the range of application of Mo or W and SiC or Si 3 N 4 joints.

上記方法の一実施態様を第3図によつて詳述する。One embodiment of the above method will be described in detail with reference to FIG.

先ず、Mo又はW基材1の全表面にCr被覆層3を配設
する。その方法は、Crメツキ、Cr蒸着、Cr溶射等
による。続いて、Cr被覆層3の全表面にNi被覆層4
を配設する。その方法は、Niメツキ、Ni蒸着、Ni
溶射等による。次いで、Ni被覆層4の全表面にCr拡
散メツキ7処理を行う。
First, the Cr coating layer 3 is provided on the entire surface of the Mo or W base material 1. The method is Cr plating, Cr vapor deposition, Cr thermal spraying, or the like. Then, the Ni coating layer 4 is formed on the entire surface of the Cr coating layer 3.
To arrange. The method is Ni plating, Ni deposition, Ni
Due to thermal spraying, etc. Then, Cr diffusion plating 7 treatment is performed on the entire surface of the Ni coating layer 4.

しかる後、上記処理を行つたMo又はW基材1とSiC又
はSi3N基材2とを重ね合せ、真空中あるいはAr中
で、Mo又はW、SiC又はSi3Nおよびインサート材の
いずれの融点よりも低い温度に加熱し、加圧して固相接
合する。
Then, the Mo or W base material 1 and the SiC or Si 3 N 4 base material 2 which have been subjected to the above treatment are superposed on each other, and the Mo or W, SiC or Si 3 N 4 and insert materials are placed in vacuum or in Ar. It is heated to a temperature lower than either melting point and pressurized to perform solid phase bonding.

第2発明の好ましい態様 Mo又はWとSiC又はSi3Nの接合において、Mo又は
Wと接合面を含む全表面に、上記第1発明の好ましい態
様で説明したコーテイング並びにCr拡散メツキ処理し
た後、SiC又はSi3Nとを前記第2発明で説明したろう
付により、高強度の継手強度を得ることができる。
Preferred embodiment of the second invention In the bonding of Mo or W and SiC or Si 3 N 4 , after applying the coating and Cr diffusion plating treatment explained in the preferred embodiment of the first invention to the entire surface including the bonding surface of Mo or W. , SiC or Si 3 N 4 can be used to obtain high strength joint strength by brazing described in the second invention.

この方法の特徴は、上記第1発明の好ましい態様で説明
したと同様に、Mo又はWの最表面に、耐酸化性、各種
高温耐食性にすぐれたNi・Cr合金層が生成し、Mo又
はWとSiC又はSi3N継手の適用範囲を大きく拡大する
ことにある。
The feature of this method is that, as described in the preferred embodiment of the first invention, a Ni / Cr alloy layer excellent in oxidation resistance and various high temperature corrosion resistance is formed on the outermost surface of Mo or W, and Mo or W And to greatly expand the application range of SiC or Si 3 N 4 joints.

上記方法の一実施態様を第4図によつて詳述する。One embodiment of the above method will be described in detail with reference to FIG.

先ず、Mo又はW基材1の全表面に、Cr被覆層3を配
設する。その方法は、Crメツキ、Cr蒸着、Cr溶射
等による。続いて、Cr被覆層3の全表面にNi被覆層
4を配設する。その方法は、Niメツキ、Ni蒸着、N
i溶射等による。次いで、Ni被覆層4の全表面にCr
拡散メツキ7処理を行う。
First, the Cr coating layer 3 is provided on the entire surface of the Mo or W base material 1. The method is Cr plating, Cr vapor deposition, Cr thermal spraying, or the like. Then, the Ni coating layer 4 is provided on the entire surface of the Cr coating layer 3. The method is Ni plating, Ni vapor deposition, N
i By thermal spraying, etc. Then, Cr is formed on the entire surface of the Ni coating layer 4.
Diffusion plating 7 processing is performed.

しかる後、上記処理を行つたMo又はW基材1とSiC又
はSi3N基材2とをNiろう、CuろうまたはAgろう6を
用いて、真空中あるいはAr中でろう付する。
Thereafter, the Mo or W base material 1 and the SiC or Si 3 N 4 base material 2 which have been subjected to the above treatment are brazed in vacuum or in Ar using Ni solder, Cu solder or Ag solder 6.

なお、上記第1及び第2発明の好ましい態様において、
Mo又はWの接合面を含む全表面に、インサート材のC
r、CrとNi、あるいはCrとCuをコーテイング
し、高強度継手を得ると共に、Mo又はWより耐酸化性
にすぐれるこのコーテイング層の存在で、Mo又はWと
SiC又はSi3N継手の適用範囲を拡大することもでき
る。
In the preferred embodiments of the first and second inventions,
C of the insert material on the entire surface including the joint surface of Mo or W
r, Cr and Ni, or Cr and Cu are coated to obtain a high-strength joint, and the presence of this coating layer, which is superior in oxidation resistance to Mo or W,
The application range of SiC or Si 3 N 4 joints can also be expanded.

〔発明の効果〕〔The invention's effect〕

(1) Mo又はWとSiC又はSi3Nを適正なインサート材
を用いることで、強固に接合することができる。
(1) Mo or W and SiC or Si 3 N 4 can be firmly bonded by using an appropriate insert material.

(2) Mo又はWとSiC又はSi3Nの継手は、SiC又はSi3
Nのすぐれた耐熱性に律則されて、高温で使用される
ことが多い。且つ、その場合、酸化雰囲気のケースが多
く、そうした環境下では、Mo又はWは激しい酸化を起
こし、使用に耐えられない。これに対し、本発明の接合
用インサート材は、耐酸化性はもちろん、耐食性にもす
ぐれ、これをMo又はWの全表面にコーテイングするこ
とで、Mo又はWとSiC又はSi3N継手の適用範囲を拡
大することができる。
(2) The joint of Mo or W and SiC or Si 3 N 4 is SiC or Si 3
Due to the excellent heat resistance of N 4 , it is often used at high temperatures. Moreover, in that case, there are many cases of an oxidizing atmosphere, and in such an environment, Mo or W causes severe oxidation and cannot be used. On the other hand, the bonding insert material of the present invention has excellent corrosion resistance as well as oxidation resistance, and by coating this on the entire surface of Mo or W, Mo or W and SiC or Si 3 N 4 joint of The range of application can be expanded.

〔実施例〕〔Example〕

(実施例1) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Moの接合面にCrメツキ20μ
を施こしたあと、SiCを重ね合せ、10-4 Torr下で、1
100℃×0.5kg/mm2×30分の拡散溶接を行つ
た。その結果、SiCに割れ等の発生もなく、強固な接合
継手が得られた。
(Example 1) Mo of 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
When bonding SiC plates, Cr plating is 20μ on the Mo bonding surface.
And then overlaying with SiC, under 10 -4 Torr, 1
Diffusion welding was performed at 100 ° C. × 0.5 kg / mm 2 × 30 minutes. As a result, a strong joint was obtained without cracking of SiC.

(実施例2) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Moの接合面にCr蒸着10μを
行い、続いて、Ni溶射30μを施したあと、SiCを重ね
合せ、Ar雰囲気中で、850℃×100kg/mm2×1時
間の拡散溶接を行つた。その結果、SiCに割れ等の発生
もなく、強固な接合継手が得られた。
(Example 2) Mo of 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
In the joining of SiC plates, Cr vapor deposition of 10μ was performed on the Mo joining surface, followed by Ni thermal spraying of 30μ, and then SiC was overlaid and diffused in an Ar atmosphere at 850 ° C. × 100 kg / mm 2 × 1 hour. Welded. As a result, a strong joint was obtained without cracking of SiC.

(実施例3) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Mo接合面にCr溶射30μを行
い、続いてCuメツキ40μを施こしたあと、SiCを重
ね合せ、10-4 Torr下で、1050℃×0.5kg/mm2
×30分の拡散溶接を行つた。その結果、SiCに割れ等
の発生もなく、強固な接合継手が得られた。
(Example 3) 5 mm (plate thickness) x 50 mm (width) x 100 mm (length) Mo
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
In the joining of SiC plates, Cr is sprayed on the Mo joining surface by 30μ, then Cu plating is done by 40μ, and then SiC is overlaid at 1050 ° C × 0.5kg / mm 2 under 10 -4 Torr.
Diffusion welding was performed for 30 minutes. As a result, a strong joint was obtained without cracking of SiC.

(実施例4) 3mm(板厚)×25mm(幅)×25mm(長さ)のW板と
3mm(板厚)×25mm(幅)×25mm(長さ)のSiC板
の接合において、Wの接合面にCrメツキ30μを行つ
たあと、Cu箔50μを挿入してSiCを重ね合せ、10
-4 Torr下で、1050℃×0.5kg/mm2×30分の拡
散溶接を行つた。その結果、Si3Nに割れ等の発生もな
く、強固な接合継手が得られた。
(Example 4) In joining a 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) W plate and a 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) SiC plate, After making 30μ of Cr plating on the joint surface, insert 50μ of Cu foil and superimpose SiC on it.
Diffusion welding was performed under -4 Torr at 1050 ° C x 0.5 kg / mm 2 x 30 minutes. As a result, a strong bonded joint was obtained without cracking of Si 3 N 4 .

(実施例5) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
Si3N板の接合において、Moの接合面にCrメツキ2
0μを施こしたあと、Si3Nを重ね合せ、10-4 Torr
下で、1200℃×0.5kg/mm2×30分の拡散溶接
を行つた。その結果、Si3Nに割れ等の発生もなく、強
固な接合継手が得られた。
(Example 5) Mo of 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
When bonding Si 3 N 4 plates, Cr plating 2 on the Mo bonding surface.
After applying 0μ, overlay Si 3 N 4 and 10 -4 Torr
Diffusion welding was performed below at 1200 ° C. × 0.5 kg / mm 2 × 30 minutes. As a result, a strong bonded joint was obtained without cracking of Si 3 N 4 .

(実施例6) 3mm(板厚)×25mm(幅)×25mm(長さ)のW板と
3mm(板厚)×25mm(幅)×25mm(長さ)のSi3W
板の接合において、Wの接合面にCrメツキ20μを行
い、続いてNiメツキ20μを施こしたあと、Si3N
重ね合せ、10-4 Torr下で、1200℃×0.5kg/m
m2×1Hの拡散溶接を行つた。その結果、Si3Nに割れ
等の発生もなく、強固な接合継手が得られた。
(Example 6) 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) W plate and 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) Si 3 W 4
In the joining of the plates, Cr plating 20μ is performed on the W joining surface, Ni plating 20μ is subsequently applied, and then Si 3 N 4 is superposed and 1200 ° C. × 0.5 kg / m under 10 −4 Torr.
Diffusion welding of m 2 × 1H was performed. As a result, a strong bonded joint was obtained without cracking of Si 3 N 4 .

(実施例7) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Moの接合面にCrメツキ30μ
を施こしたあと、10-4 Torr下で、1000℃×0.
01kg/mm2×2時間の拡散溶接を行い、次いで、真空
中で、Niろう(BNi−2)を用いて、SiCと1050℃×1
0分でろう付を行つた。その結果、SiCに割れ等の発生
もなく、強固な接合継手が得られた。
(Example 7) 5 mm (plate thickness) x 50 mm (width) x 100 mm (length) Mo
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
When joining SiC plates, Cr plating is 30μ on the joining surface of Mo.
After being subjected to 1000 ° C. under 10 −4 Torr.
01kg / mm 2 × 2 hours of diffusion welding, then using Ni solder (BNi-2) in vacuum, SiC and 1050 ℃ × 1
I brazed in 0 minutes. As a result, a strong joint was obtained without cracking of SiC.

(実施例8) 3mm(板厚)×25mm(幅)×25mm(長さ)のW板と
3mm(板厚)×25mm(幅)×25mm(長さ)のSiC板
の接合において、Wの接合面にCrメツキ30μを施こ
したあと、50μのNi箔を10-4 Torr下で、900
℃×2kg/mm2×1時間の拡散溶接を行い、次いで、真空
中で、Agろう(BAg−8)を用いて、SiCと800℃×
10分でろう付を行つた。その結果、SiCに割れ等の発
生もなく、強固な接合継手が得られた。
(Example 8) In joining a 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) W plate and a 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) SiC plate, After applying 30μ of Cr plating on the joint surface, apply Ni foil of 50μ under 900 −10 Torr.
℃ × 2kg / mm 2 × 1 hour diffusion welding, then in vacuum, using Ag brazing (BAg-8), SiC and 800 ℃ ×
I brazed in 10 minutes. As a result, a strong joint was obtained without cracking of SiC.

(実施例9) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Mo接合面にCr蒸着10μを施
こしたあと、50μのCu箔をAr中で、900℃×2kg
/mm2×1時間の拡散溶接を行い、次いで、Ar中でCuろ
う(BCuP−3)を用いて、SiCと800℃×15分でろ
う付を行つた。その結果、SiCに割れ等の発生もなく、
強固な接合継手が得られた。
(Example 9) Mo of 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
In joining SiC plates, after depositing 10μ of Cr on the joining face of Mo, Cu foil of 50μ is placed in Ar at 900 ° C × 2kg.
/ mm 2 × 1 hour diffusion welding was performed, and then Cu brazing (BCuP-3) was used in Ar for brazing at 800 ° C. for 15 minutes with SiC. As a result, there is no crack in the SiC,
A strong joint was obtained.

(実施例10) 3mm(板厚)×25mm(幅)×25mm(長さ)のW板と
3mm(板厚)×25mm(幅)×25mm(長さ)のSi3N
板の接合において、Wの接合面にCrメツキ20μを施
こしたあと、10-4 Torr下で、1000℃×0.01k
g/mm2×2時間の拡散溶接を行い、次いで、真空中で、
Niろう(BNi−2)を用いて、Si3Nと1100℃×
10美でろう付を行つた。その結果、Si3Nに割れ等の
発生もなく、強固な接合継手が得られた。
(Example 10) 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) W plate and 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) Si 3 N 4
In joining the plates, after applying 20μ of Cr plating to the joining surface of W, 1000 ° C × 0.01k under 10 -4 Torr
g / mm 2 × 2 hours of diffusion welding, then in vacuum
Using Ni solder (BNi-2), Si 3 N 4 and 1100 ° C ×
I brazed with 10 beauty. As a result, a strong bonded joint was obtained without cracking of Si 3 N 4 .

(実施例11) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
Si3N板の接合において、Moの接合面にCrメツキ2
0μを行い、続いて、Cuメツキ20μmを施こしたあ
と、10-4 Torr下で、1000℃×0.01kg/mm2×
2時間の拡散溶接を行い、次いで、Ar中で、Cuろう
(BCuP−3)を用いて、Si3Nと1100℃×10分で
ろう付を行つた。その結果、SiCに割れ等の発生もな
く、強固な接合継手が得られた。
(Example 11) Mo of 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
When bonding Si 3 N 4 plates, Cr plating 2 on the Mo bonding surface.
0μ, followed by Cu plating 20μm, then at 10 -4 Torr, 1000 ° C. × 0.01 kg / mm 2 ×
Diffusion welding was performed for 2 hours, and then brazing was performed with Cu braze (BCuP-3) in Si at 1100 ° C. for 10 minutes with Si 3 N 4 . As a result, a strong joint was obtained without cracking of SiC.

(実施例12) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Mo板の全表面にCrメツキ20
μを行つたあと、その上にNiメツキ50μを全面に行
い、次いで、Niメツキ層全面にCr拡散メツキ(金属
Cr+Al2O3+NH4Cl中で、1100℃×5時間の拡散メ
ツキ処理)を行つたあと、SiCを重ね合せ、10-4 Torr
下で、900℃×2kg/mm2×1時間の拡散溶接を行つ
た。その結果、SiCに割れ等の発生もなく、強固な接合
継手が得られた。
(Example 12) 5 mm (plate thickness) x 50 mm (width) x 100 mm (length) Mo
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
When bonding SiC plates, Cr plating 20 is applied to the entire surface of Mo plates.
After performing μ, Ni plating 50μ is performed on the entire surface, and then Cr diffusion plating (in metal Cr + Al 2 O 3 + NH 4 Cl, 1100 ° C. × 5 hours diffusion plating treatment) is performed on the entire surface of the Ni plating layer. After completing the process, overlay SiC and -10 Torr
Diffusion welding was carried out at 900 ° C. × 2 kg / mm 2 × 1 hour. As a result, a strong joint was obtained without cracking of SiC.

(実施例13) 3mm(板厚)×25mm(幅)×25mm(長さ)のW板と
3mm(板厚)×25mm(幅)×25mm(長さ)のSi3N
板の接合において、W板の全表面にCrメツキ20μを
行つたあと、その上にNi蒸着20μを全面に行い、次
いで、Ni蒸着層全面にCr拡散メツキ(金属Cr+Al
2O3+NH4Cl中で1100℃×5時間の拡散メツキ処理)
を行つたあと、Si3Nを重ね合せ、10-4 Torr下で、
1200℃×0.5kg/mm2×1時間の拡散溶接を行つ
た。その結果、Si3Nに割れ等の発生もなく、強固な接
合継手が得られた。
(Example 13) 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) W plate and 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) Si 3 N 4
In the joining of the plates, Cr plating 20 μ is performed on the entire surface of the W plate, Ni deposition 20 μ is performed on the entire surface, and then Cr diffusion plating (metal Cr + Al) is formed on the entire surface of the Ni deposition layer.
Diffusion plating treatment in 2 O 3 + NH 4 Cl for 5 hours at 1100 ° C)
And then Si 3 N 4 on top of each other under 10 −4 Torr,
Diffusion welding was performed at 1200 ° C. × 0.5 kg / mm 2 × 1 hour. As a result, a strong bonded joint was obtained without cracking of Si 3 N 4 .

(実施例14) 3mm(板厚)×25mm(幅)×25mm(長さ)のW板と
3mm(板厚)×25mm(幅)×25mm(長さ)のSiC板
の接合において、W板の全表面にCrメツキ20μを行
つたあと、その上にNiメツキ50μmを全面に行い、
次いで、Niメツキ全面にCr拡散メツキ(金属Cr+
Al2O3+NH4Cl中で、1100℃×5時間の拡散メツキ処
理)を行つたあと、真空中で、Niろう(BNi−2)を
用いて、SiCと1050℃×10分でろう付を行つた。
その結果、SiCに割れ等の発生もなく、強固な接合継手
が得られた。なお、Agろう(BAg−8)を用いて、SiC
と800℃×10分、Cuろう(BCuP−3)を用いて、
SiCと800℃×15分でろう付を行つた場合も、同様
の良好な接合結果が得られた。
(Example 14) In joining a 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) W plate and a 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) SiC plate, a W plate Cr plating 20μ on the entire surface of, then Ni plating 50μm on the whole surface,
Next, a Cr diffusion plating (metal Cr +
Diffusion plating treatment at 1100 ° C for 5 hours in Al 2 O 3 + NH 4 Cl), and then brazing with Ni braze (BNi-2) in vacuum at 1050 ° C for 10 minutes with SiC. I went.
As a result, a strong joint was obtained without cracking of SiC. In addition, using Ag wax (BAg-8), SiC
And 800 ° C x 10 minutes, using Cu wax (BCuP-3),
The same good joining result was obtained when brazing was performed with SiC at 800 ° C. for 15 minutes.

(実施例15) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
Si3N板の接合において、Mo板の全表面にCrメツキ
20μを行つたあと、その上にNi溶射50μを全面に
行い、次いでNi溶射面全面にCr拡散メツキ(金属C
r+Al2O3+NH4Cl中で、1100℃×5時間の拡散メツ
キ処理)を行つたあと、真空中で、Niろう(BNi−
2)を用いて、Si3Nと1100℃×10分でろう付を
行つた。その結果、Si3Nに割れ等の発生もなく、強固
な接合継手が得られた。なお、Cuろう(BCuP−3)を
用いて、Si3Nと1100℃×10分、Agろう(BAg
−8)を用いて、Si3Nと800℃×10分でろう付を
行つた場合も、同様に良好な接合結果が得られた。
(Example 15) Mo of 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
In joining Si 3 N 4 plates, after Cr plating of 20μ is performed on the entire surface of Mo plate, Ni spraying of 50μ is performed on the entire surface, and then Cr diffusion plating (metal C
After performing diffusion plating treatment at 1100 ° C. for 5 hours in r + Al 2 O 3 + NH 4 Cl, Ni braze (BNi−
Using 2), brazing was performed with Si 3 N 4 at 1100 ° C. for 10 minutes. As a result, a strong bonded joint was obtained without cracking of Si 3 N 4 . In addition, using Cu brazing (BCuP-3), Si 3 N 4 and 1100 ° C. for 10 minutes, Ag brazing (BAg
-8) with, even if the brazing having conducted in Si 3 N 4 and 800 ° C. × 10 minutes, similarly good bonding results.

(実施例16) 5mm(板厚)×50mm(幅)×100mm(長さ)のMo
板と5mm(板厚)×50mm(幅)×100mm(長さ)の
SiC板の接合において、Mo板の全表面にCrメツキ20
μを行つたあと、その上にNi合金(Ni50%+Cr
50%)溶射200μを全面に行い、次いで、Ni合金
溶射面全面にCr拡散メツキ(金属Cr+Al2O3+NH4Cl
中で1100℃×5時間の拡散メツキ処理)を行つたあ
と、真空中で、Niろう(BNi−2)を用いて、SiCと1
100℃×10分でろう付を行つた。その結果、SiCに
割れ等の発生もなく、強固な接合継手が得られた。な
お、Cuろう(BCuP−3)を用いて、SiCと1100℃
×10分、Agろう(BAg−8)を用いて、SiCと800
℃×10分でろう付を行つた場合も、同様に良好な接合
結果が得られた。
(Example 16) 5 mm (plate thickness) x 50 mm (width) x 100 mm (length) Mo
Plate and 5 mm (plate thickness) x 50 mm (width) x 100 mm (length)
When bonding SiC plates, Cr plating 20 is applied to the entire surface of Mo plates.
After performing μ, Ni alloy (Ni50% + Cr
50%) Spraying 200μ on the entire surface, and then Cr diffusion plating (metal Cr + Al 2 O 3 + NH 4 Cl) on the entire surface of the Ni alloy sprayed surface.
(1100 ° C x 5 hours diffusion plating treatment) in a vacuum, and then, in a vacuum, using Ni solder (BNi-2), SiC and 1
Brazing was performed at 100 ° C. for 10 minutes. As a result, a strong joint was obtained without cracking of SiC. In addition, using Cu solder (BCuP-3), SiC and 1100 ℃
× 10 minutes, using Ag wax (BAg-8), SiC and 800
Even when brazing was performed at 10 ° C. for 10 minutes, similarly good joining results were obtained.

(実施例17) 3mm(板厚)×25mm(幅)×25mm(長さ)のMo板
と3mm(板厚)×25mm(幅)×25mm(長さ)のSiC
板の接合において、Moの全表面にCrメツキ20μを
行い、続いて、Cu合金(Cu70%+Ni30%)溶
射200μを全面に行つたあと、SiCを重ね合せ、10
-4 Torr下で、1000℃×0.5kg/mm2×30分の拡
散溶接を行つた。その結果、SiCに割れ等の発生もな
く、強固な接合継手が得られた。
(Example 17) 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) Mo plate and 3 mm (plate thickness) x 25 mm (width) x 25 mm (length) SiC
In the joining of the plates, Cr plating 20μ is performed on the entire surface of Mo, then 200μ of Cu alloy (Cu70% + Ni30%) is sprayed on the entire surface, and then SiC is superposed.
Diffusion welding was carried out at 1000 ° C. × 0.5 kg / mm 2 × 30 minutes under −4 Torr. As a result, a strong joint was obtained without cracking of SiC.

【図面の簡単な説明】[Brief description of drawings]

第1図乃至第4図は、本発明によるMo又はWとSiC又
はSi3N4の接合方法の工程を示す説明図である。
1 to 4 are explanatory views showing the steps of the method for joining Mo or W and SiC or Si 3 N 4 according to the present invention.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】Mo又はW基材、該基材に被着される
第1のCr被覆層、該Cr被覆層に被着されるCr,
Ni及びCuのうちの少くとも1種の第2の金属被覆
層、及び該第2の金属被覆層に接して固着されるSiC
又はSi3N基材よりなることを特徴とするSiC又はSi3N
基材とMo又はW基材との接合体。
1. A Mo or W substrate, a first Cr coating layer deposited on the substrate, Cr deposited on the Cr coating layer,
A second metal coating layer of at least one of Ni and Cu, and SiC fixed in contact with the second metal coating layer
Or SiC or Si 3 N characterized by comprising a Si 3 N 4 base material
A joined body of 4 base materials and Mo or W base material.
【請求項2】第1のCr被覆層及び第2の金属被覆層が
Mo又はW基材の全表面に被覆され、かつ第2の金属被
覆層の最外層がCr拡散メツキ層であることを特徴とす
る特許請求の範囲第1項の接合体。
2. The first Cr coating layer and the second metal coating layer are coated on the entire surface of the Mo or W substrate, and the outermost layer of the second metal coating layer is a Cr diffusion plating layer. The joined body according to claim 1, which is characterized by the above.
【請求項3】Mo又はW基材、該基材に被着される
第1のCr被覆層、該Cr被覆層に被着されるCr,
Ni及びCuのうちの少くとも1種の第2の金属被覆
層、該第2の金属被覆層に被着されるNiろう、Cu
ろう及びAgろう材のうちの少くとも1種のろう材被覆
層及び該ろう材被覆層に接して固着されるSiC又はSi3
N基材よりなることを特徴とするSiC又はSi3N基材と
Mo又はW基材との接合体。
3. A Mo or W substrate, a first Cr coating layer deposited on the substrate, Cr deposited on the Cr coating layer,
A second metal coating layer of at least one of Ni and Cu, Ni braze deposited on the second metal coating layer, Cu
At least one brazing material coating layer of brazing material and Ag brazing material and SiC or Si 3 adhered to the brazing material coating layer in contact therewith
SiC or Si 3 N 4 base material and Mo or W conjugate with the substrate, characterized by comprising from N 4 substrate.
【請求項4】第1のCr被覆層及び第2の金属被覆層が
Mo又はW基材の全表面に被覆され、かつ第2の金属被
覆層の最外層がCr拡散メツキ層であることを特徴とす
る特許請求の範囲第3項の接合体。
4. The first Cr coating layer and the second metal coating layer are coated on the entire surface of the Mo or W substrate, and the outermost layer of the second metal coating layer is a Cr diffusion plating layer. The joined body according to claim 3, which is characterized.
JP19608485A 1985-09-06 1985-09-06 Bonded body of SiC or Si (bottom 3) N (bottom 4) base material and Mo or W base material Expired - Lifetime JPH0615426B2 (en)

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JPS6259577A JPS6259577A (en) 1987-03-16
JPH0615426B2 true JPH0615426B2 (en) 1994-03-02

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US7338081B2 (en) 2002-11-28 2008-03-04 Hitachi, Construction Machinery Co., Ltd. Truck frame for a construction machine
JP4617096B2 (en) 2003-05-20 2011-01-19 株式会社小松製作所 Construction machinery
JP4526852B2 (en) 2003-05-20 2010-08-18 株式会社小松製作所 Construction machinery
JP4394503B2 (en) 2003-05-20 2010-01-06 株式会社小松製作所 Construction machinery
JP2016141572A (en) * 2015-01-29 2016-08-08 京セラ株式会社 Junction between ceramic and metal, and method for joining ceramic to metal

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