JPH0616495B2 - Silicon vapor phase epitaxial growth method - Google Patents
Silicon vapor phase epitaxial growth methodInfo
- Publication number
- JPH0616495B2 JPH0616495B2 JP16720986A JP16720986A JPH0616495B2 JP H0616495 B2 JPH0616495 B2 JP H0616495B2 JP 16720986 A JP16720986 A JP 16720986A JP 16720986 A JP16720986 A JP 16720986A JP H0616495 B2 JPH0616495 B2 JP H0616495B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- epitaxial growth
- vapor phase
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 26
- 239000012808 vapor phase Substances 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 title claims description 12
- 239000010703 silicon Substances 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 44
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000011148 porous material Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000010419 fine particle Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、Ｓｉエピタキシャル成長方法に関するもので
ある。TECHNICAL FIELD The present invention relates to a Si epitaxial growth method.
従来、Ｓｉの気相エピタキシャル成長方法としては、高
周波加熱あるいは赤外線ランプ加熱により、サセプタ及
びＳｉ単結晶基板（以下基板と記す）のみを加熱する。
言わゆるコールドウォール方式のものが広く実用化され
ている。この方法は、赤外線ランプ加熱あるいは高周波
加熱により、基板とサセプタのみを加熱し、反応管内
に、シラン系反応ガス(ＳｉＨ4，ＳｉＨ2Ｃｌ2，ＳｉＨ
Ｃｌ3，ＳｉＣｌ4)と水素(Ｈ2)及び必要に応じてドーパ
ントガス（シボランＢ2Ｈ6，アルシンＡｓＨ3，ホスフ
ィンＰＨ3）を導入して所望のＳｉエピタキシャル膜を
成長させるものである。この様な方法としては、第４図
に示した様に、台形サセプタ３６を用い、スループット
（基板の処理能力）と、膜質（膜厚、電気抵抗）の均一
性を改善したものがある。(M.Ogirima ctal.,J.Electro
chem.Soc.vol.125.No.11(1978)P.1879“A Multiwafer G
rowth System for Low Pressure Silicon Epitaxy“)ま
た、同様な方法としては、第５図に示した様に、基板を
積み重ねる様に保持するサセプタ42と反応ガス導入ノズ
ル４３を用い、スループットと膜質の均一性向上を計っ
たものがある。（V ladimir S.Ban etal.,Proceeding o
f Internatioral Conference on Chemical Vapor Depos
ition,The Electrochemical Inc.,1979 P.102“A NEW R
EACTOR FOR SILICON EPITAXY“）しかしながら、基板の
大口径化が進むに伴い、上述の様なコールドウォール方
式のＳi気相エピタキシャル成長方法では、装置の運転
コスト（消費電力、反応ガスの消費量、保守の困難
さ）、スループット、装置価格、等の問題が深刻化して
来ている。Conventionally, as a vapor phase epitaxial growth method of Si, only a susceptor and a Si single crystal substrate (hereinafter referred to as a substrate) are heated by high frequency heating or infrared lamp heating.
The so-called cold wall type is widely used. In this method, only the substrate and the susceptor are heated by infrared lamp heating or high frequency heating, and silane-based reaction gas (SiH 4 , SiH 2 Cl 2 , SiH
Cl 3 , SiCl 4 ) and hydrogen (H 2 ) and, if necessary, a dopant gas (ciborane B 2 H 6 , arsine AsH 3 , phosphine PH 3 ) are introduced to grow a desired Si epitaxial film. As such a method, as shown in FIG. 4, there is a method in which a trapezoidal susceptor 36 is used to improve the throughput (substrate processing capacity) and the uniformity of film quality (film thickness, electrical resistance). (M.Ogirima ctal., J. Electro
chem.Soc.vol.125.No.11 (1978) P.1879 “A Multiwafer G
rowth System for Low Pressure Silicon Epitaxy “) As a similar method, as shown in FIG. 5, using a susceptor 42 and a reaction gas introduction nozzle 43 that hold the substrates in a stack, the throughput and the film quality are uniform. Some improvements have been made (V ladimir S. Ban etal., Proceeding o
f Internatioral Conference on Chemical Vapor Depos
ition, The Electrochemical Inc., 1979 P.102 “A NEW R
EACTOR FOR SILICON EPITAXY ") However, with the increase in the diameter of the substrate, the operating cost of the equipment (power consumption, reaction gas consumption, maintenance is difficult) with the cold wall type Si vapor phase epitaxial growth method as described above. However, problems such as throughput and device price are becoming more serious.
これらの問題を改善するため、オギリマらは、抵抗加熱
によるホットウォール方式のSi気相エピタキシャル成長
方法を報告している。（M.Ogirima etal.,The Electroc
hemical Society Extended Abstracts.Abstract No.404
(1981)p981“LOW-PRESSURE HOT-WALL SILICON EPITAX
Y”）この方法は、拡散炉に用いられている抵抗加熱炉
内に反応管を設置し、減圧下で、SiH2Cl2，H2，PH3を同
時に同一の流路で基板に対し垂直に流し、所望のＳｉエ
ピタキシャル成長膜を成長させるものとなっている。In order to improve these problems, Ogirima et al. Have reported a hot wall type Si vapor phase epitaxial growth method by resistance heating. (M.Ogirima et al., The Electroc
hemical Society Extended Abstracts.Abstract No.404
(1981) p981 “LOW-PRESSURE HOT-WALL SILICON EPITAX
Y ”) In this method, a reaction tube is installed in a resistance heating furnace used in a diffusion furnace, and under reduced pressure, SiH 2 Cl 2 , H 2 and PH 3 are simultaneously applied to the substrate in the same channel at the same time. To grow a desired Si epitaxial growth film.
上述した従来のホットウォール方式によるＳｉ気相エピ
タキシャル成長方法は、反応に関与する全てのガスを同
一のガス流として、９００℃〜１２００℃の高温に維持
された反応管内に導入するため、Ｓｉをエピタキシャル
成長しようとする基板表面以外においても、シラン系ガ
スの熱分解反応及びSiH4以外のシラン系ガスを使用した
場合はＨ２による還元反応が生じ、Ｓｉエピタキシャル
成長の原料となるシラン系ガスが著しく消費される。こ
のため、反応ガス流路の上流側と下流側とでは、成長し
たエピタキシャル膜の膜厚は著しく異なったものとなっ
てしまう問題がある。また、これら熱分解反応や、還元
反応は、不要の微粒子を多数発生させるため、基板を汚
染し、エピタキシャル膜の欠陥発生原因となる。In the conventional Si vapor phase epitaxial growth method using the hot wall method, all gases involved in the reaction are introduced into the reaction tube maintained at a high temperature of 900 ° C. to 1200 ° C. in the same gas flow, so that Si is epitaxially grown. Even on the surface of the substrate to be tried, a thermal decomposition reaction of the silane-based gas and a reduction reaction by H 2 occur when a silane-based gas other than SiH 4 is used, and the silane-based gas as a raw material for Si epitaxial growth is significantly consumed. It Therefore, there is a problem that the grown epitaxial film has a significantly different film thickness between the upstream side and the downstream side of the reaction gas flow path. Further, these thermal decomposition reactions and reduction reactions generate a large number of unnecessary fine particles, which contaminates the substrate and causes defects in the epitaxial film.
本発明のＳｉ気相エピタキシャル成長方法は、シラン系
ガスにＨClあるいはＣｌ２を混合したガスと水素ガスと
を基板近傍までそれぞれ別々に分離して供給するもので
ある。According to the Si vapor phase epitaxial growth method of the present invention, a gas in which HCl or Cl 2 is mixed with a silane-based gas and a hydrogen gas are separately separated and supplied to the vicinity of the substrate.
シラン系ガスにＨＣｌあるいはＣｌ２を混合したガスと
水素ガスとを基板近傍まで、それぞれ別々に分離して供
給することにより、基板近傍以外の領域におけるシラン
系ガスの熱分解反応を抑制し、Ｈ２によるシラン系ガス
の還元反応を防止できる。By supplying the gas in which HCl or Cl 2 is mixed with the silane-based gas and the hydrogen gas separately and separately to the vicinity of the substrate, the thermal decomposition reaction of the silane-based gas in the region other than the vicinity of the substrate is suppressed, and H The reduction reaction of the silane-based gas due to 2 can be prevented.
その結果微粒子の発生が抑制され、この微粒子に起因す
るエピタキシャル膜の欠陥発生が抑えられる。また原料
ガスの消費も抑制することができ、低コストでエピタキ
シャル膜を製造できる。As a result, the generation of fine particles is suppressed, and the generation of defects in the epitaxial film due to the fine particles is suppressed. In addition, consumption of raw material gas can be suppressed, and an epitaxial film can be manufactured at low cost.
次に本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
〔実施例１〕 第１図は本発明の第１の実施例に使用した成長装置の縦
断面図である。反応管は外管１及び内管２から成る２重
管であり、内管２にはガス導入のための複数の細孔３が
内管２の壁面に均一に分布する様設けられている。また
外管１にはガス導入口４，５が設けられている。内管２
の内部には、基板６を水平に保持する回転可能な基板ホ
ルダー７及び基板６の枚数と同等の数で基板６と同等の
高さに基板に向って開口している細孔を有するノズル８
が設置されており、ノズル８及びガス導入口４，５より
反応に関与するガスを導入する（図中矢印はガス流路を
示している）。外管１は真空気密を保つ様架台９に固定
され、架台９には真空排気口１０が設けられている。基
板６の加熱は、縦型の抵抗加熱炉１１を用いて行なわれ
る。[Embodiment 1] FIG. 1 is a vertical sectional view of a growth apparatus used in a first embodiment of the present invention. The reaction tube is a double tube consisting of an outer tube 1 and an inner tube 2, and the inner tube 2 is provided with a plurality of pores 3 for introducing gas so as to be uniformly distributed on the wall surface of the inner tube 2. Further, the outer tube 1 is provided with gas introduction ports 4 and 5. Inner tube 2
A rotatable substrate holder 7 for holding the substrate 6 horizontally and a nozzle 8 having pores opened toward the substrate at the same height as the substrate 6 by the same number as the number of the substrates 6 inside.
Is installed, and the gas involved in the reaction is introduced from the nozzle 8 and the gas introduction ports 4 and 5 (the arrow in the figure indicates the gas flow path). The outer tube 1 is fixed to a pedestal 9 so as to keep vacuum tightness, and the pedestal 9 is provided with a vacuum exhaust port 10. The heating of the substrate 6 is performed using a vertical resistance heating furnace 11.
以下に、第１の実施例のＳｉ気相エピタキシャル成長方
法におけるＳｉエピタキシャル成長例を示す。An example of Si epitaxial growth in the Si vapor phase epitaxial growth method of the first embodiment will be shown below.
基板ホルダー７に直径１５０mmの基板６を１０mm間隔で
５０枚取り付け、１０rpmで回転させながら、ガス導入
口４，５よりＨ２を３０／minで流し反応管内温度を
１１００℃とした。次にガス導入口４，５よりＨ２を１
５／minで流し真空排気口１０より真空排気する事で
反応管内部を２torrとした。その後ノズル８よりSiH2Cl
２０．８／minHCl０．８／min，ＰH３0.003ml／min
を流し、反応管内部を２torrに維持しＳｉのエピタキシ
ャル成長を行なった。その結果、成長速度は0.5μｍ／m
inであり、５０枚全ての基板におけるＳｉエピタキシャ
ル膜の膜厚分布は±４％以内、電気抵抗分布は±６％以
内であり、かつ微粒子の発生に起因する欠陥は認められ
なかった。50 substrates 6 having a diameter of 150 mm were attached to the substrate holder 7 at intervals of 10 mm, and H 2 was flown at 30 / min from the gas inlets 4 and 5 while rotating at 10 rpm, and the temperature inside the reaction tube was set to 1100 ° C. Next, add 1 H 2 from the gas inlets 4 and 5.
The inside of the reaction tube was set to 2 torr by evacuating from the vacuum exhaust port 10 at 5 / min. After that, SiH 2 Cl from nozzle 8
2 0.8 / min HCl 0.8 / min, PH 3 0.003 ml / min
Was flowed, and the inside of the reaction tube was maintained at 2 torr to grow Si epitaxially. As a result, the growth rate is 0.5 μm / m
In all, the film thickness distribution of the Si epitaxial film on all the 50 substrates was within ± 4%, the electrical resistance distribution was within ± 6%, and no defect due to the generation of fine particles was observed.
なお、第１の実施例において、Ｈ２流路を変更し真空排
気口１０をガス導入口としてＨ２を導入し、ガス導入口
４，５から真空排気を行なう成長実験も試みた結果、同
等の膜厚、電気抵抗の分布を有するＳｉエピタキシャル
膜が得られ、微粒子による欠陥も認められなかった。In addition, in the first embodiment, the growth experiment in which the H 2 flow path is changed, H 2 is introduced using the vacuum exhaust port 10 as a gas inlet, and vacuum exhaust is performed from the gas inlets 4 and 5 is the same. A Si epitaxial film having a film thickness and a distribution of electric resistance was obtained, and no defect due to fine particles was observed.
〔実施例２〕 第２図は、本発明の第２の実施例において、使用した成
長装置の縦断面図である。[Embodiment 2] FIG. 2 is a vertical cross-sectional view of a growth apparatus used in the second embodiment of the present invention.
本実施例は内管１３内部に設置されたノズル１９の細孔
が、内管１３の内壁面に向って開口している点で第１の
実施例と異なる。この時ノズル１９の細孔と、内管１３
の壁面に開口している細孔14とは位置が一致しない様配
置する事が望ましい。この実施例では、ノズル１９より
導入されるガス流が一度内管１３の内壁面にあたり、内
管１３内部に広く分散されるため多数枚の基板にエピタ
キシャル成長を行なう場合、膜厚及び電気抵抗の均一性
を向上できるという利点がある。This embodiment is different from the first embodiment in that the pores of the nozzle 19 installed inside the inner pipe 13 are open toward the inner wall surface of the inner pipe 13. At this time, the pores of the nozzle 19 and the inner tube 13
It is desirable to arrange them so that their positions do not match the positions of the pores 14 opening on the wall surface of the. In this embodiment, the gas flow introduced from the nozzle 19 once hits the inner wall surface of the inner tube 13 and is widely dispersed inside the inner tube 13. Therefore, when performing epitaxial growth on a large number of substrates, the film thickness and the electrical resistance are uniform. There is an advantage that the property can be improved.
第２の実施例のＳｉ気相エピタキシャル成長方法を用
い、７５枚の基板に実施例１と同等の条件でエピタキシ
ャル成長を行なった結果、成長速度は０．５μｍ／min
であり膜厚分布は±３％以内、電気抵抗分布は±５％以
内であった。また微粒子発生に起因する欠陥は認められ
なかった。Using the Si vapor phase epitaxial growth method of the second embodiment, epitaxial growth was performed on 75 substrates under the same conditions as in the first embodiment, and as a result, the growth rate was 0.5 μm / min.
The film thickness distribution was within ± 3%, and the electrical resistance distribution was within ± 5%. No defects due to the generation of fine particles were observed.
なお、第２の実施例においてもＨ２流路を変更し、真空
排気口２１側からＨ２を導入し、ガス導入口１５，１６
側から真空排気を行なう成長実験を試みたところ同等の
膜厚及び電気抵抗分布のＳｉエピタキシャル膜が得ら
れ、微粒子による欠陥は認められなかった。In addition, also in the second embodiment, the H 2 flow path is changed, H 2 is introduced from the vacuum exhaust port 21 side, and the gas introduction ports 15 and 16 are provided.
When a growth experiment was performed by vacuum evacuation from the side, a Si epitaxial film having an equivalent film thickness and electric resistance distribution was obtained, and no defect due to fine particles was observed.
〔実施例３〕 第３図は本発明の第３の実施例において使用した成長装
置の縦断面図である。[Embodiment 3] FIG. 3 is a longitudinal sectional view of a growth apparatus used in a third embodiment of the present invention.
反応管は外管２３と内管２４から成る２重反応管であ
り、内管２４には排気のための複数の細孔２５が、内管
２４の壁面に均一に分布する様設けられている。また外
管２３には真空排気口２６が設けられている。内管２４
の内部には、基板２７を水平に保持する回転可能な基板
ホルダー２８が設けられている。また基板２７の枚数と
同等の数で、基板２７と同等の高さに細孔を有するノズ
ル２９及び３０が設けられている（図中矢印はガス流路
を示している）、外管２３は真空気密を保つよの架台３
１に固定されている。基板２７の加熱は抵抗加熱炉３２
を用いて行なわれる。The reaction tube is a double reaction tube composed of an outer tube 23 and an inner tube 24. The inner tube 24 is provided with a plurality of pores 25 for exhaust so as to be uniformly distributed on the wall surface of the inner tube 24. . Further, the outer tube 23 is provided with a vacuum exhaust port 26. Inner pipe 24
A rotatable substrate holder 28 that holds the substrate 27 horizontally is provided inside the. Further, nozzles 29 and 30 having pores are provided at the same height as the number of the substrates 27 and at the same height as the substrates 27 (the arrow in the drawing indicates a gas flow path), and the outer tube 23 is A pedestal 3 for keeping vacuum tightness
It is fixed at 1. The substrate 27 is heated by the resistance heating furnace 32.
Is performed using.
この実施例では、反応に関与するガスが全てノズルによ
って導入される事から膜厚、電気抵抗の均一性向上に有
利であり、微粒子発生の抑制もより効果的に行なわれ
る。In this embodiment, all the gas involved in the reaction is introduced by the nozzle, which is advantageous for improving the uniformity of the film thickness and electric resistance, and the generation of fine particles can be suppressed more effectively.
次に、第３の実施例のＳｉ気相エピタキシャル成長方法
におけるＳｉエピタキシャル成長例を示す。Next, an example of Si epitaxial growth in the Si vapor phase epitaxial growth method of the third embodiment will be shown.
基板ホルダー２８に直径１５０mmの基板２７を７５枚、
８mm間隔で取り付け、１０rpmで回転させ、ノズル２９
よりＨ２を４０／minで流し、反応管内温度を１１０
０℃とした。続いて、Ｈ２流量を２０／minまで減
じ、真空排気口２６より真空排気することで反応管内部
を２torrとした。その後ノズル３０よりＳｉH2Cl2１
／min，HCl１／min，B2H60.01ml／minを流し、反応管
内部を２torrに維持しながらＳｉのエピタキシャル成長
を行なった。その結果、成長速度は０．６μｍ／minで
あり７５枚全ての基板での膜厚分布は±３％以内、電気
抵抗分布は±５％以内であった。また、微粒子起因の欠
陥も認められなかった。75 pieces of boards 27 having a diameter of 150 mm are provided in the board holder 28,
Installed at 8 mm intervals, rotated at 10 rpm, nozzle 29
H 2 at a flow rate of 40 / min, and the temperature inside the reaction tube is 110
It was set to 0 ° C. Subsequently, the H 2 flow rate was reduced to 20 / min, and the inside of the reaction tube was set to 2 torr by evacuating from the vacuum exhaust port 26. Then SiH 2 Cl 2 1 from nozzle 30
/ Min, HCl 1 / min, and B 2 H 6 0.01 ml / min were flown to maintain the inside of the reaction tube at 2 torr for epitaxial growth of Si. As a result, the growth rate was 0.6 μm / min, the film thickness distribution on all 75 substrates was within ± 3%, and the electrical resistance distribution was within ± 5%. In addition, no defect due to fine particles was observed.
なお、第１〜第３の実施例ではＳｉＨ２Ｃｌ2と混合す
るガスとしてＨＣｌを用いたが、Ｃｌ２を用いても全く
同様の結果を得た。さらに、SiH2Cl2の代わりに、Si
Ｈ4，SiHCl3，SiCl4を用いても同様の結果が得られた。Although HCl was used as the gas mixed with SiH 2 Cl 2 in the first to third examples, exactly the same result was obtained by using Cl 2 . Furthermore, instead of SiH 2 Cl 2 , SiH 2
Similar results were obtained using H 4 , SiHCl 3 , and SiCl 4 .
以上説明したように、本発明において、シラン糸ガスに
HClあるいはCl２を混合したガスと水素ガスとを基板近
傍まで、それぞれ別々に分離して供給することにより、
同時に複数枚の基板を使用した場合においても、基板間
に膜厚や電気抵抗のバラツキのない状態で、微粒子の発
生に起因する欠陥のないＳｉエピタキシャル膜を低コス
トかつ量産性良く製造できる効果がある。As described above, in the present invention, the silane thread gas is
By separately supplying the gas mixed with HCl or Cl 2 and the hydrogen gas to the vicinity of the substrate separately,
Even when a plurality of substrates are used at the same time, there is an effect that a Si epitaxial film having no defects caused by the generation of fine particles can be manufactured at low cost and with good mass productivity in a state where there is no variation in film thickness or electric resistance between the substrates. is there.
近年、ＬＳＩの高集積化、微細化が進むに伴い、ＭＯＳ
型素子にもＳｉエピタキシャル基板が用いられようとし
ており、通常の引き上げ技術で製造されるバルク基板と
比較して高品質であるエピタキシャル基板を低コスト、
高スルーブットで製造できる本発明の工業的価値は甚大
である。In recent years, with higher integration and miniaturization of LSI, MOS
Si epitaxial substrates are about to be used for mold elements, and compared with bulk substrates manufactured by ordinary pulling technology, high-quality epitaxial substrates can be manufactured at low cost.
The industrial value of the present invention that can be produced with a high through-bottom is enormous.
第１図は本発明の第１の実施例に用いるＳｉ気相エピタ
キシャル成長装置の縦断面図、第２図は本発明の第２の
実施例において使用する成長装置の縦断面図、第３図は
本発明の第３の実施例において使用する成長装置の縦断
面図である。第４図及び第５図はそれぞれ従来のＳｉ気
相エピタキシャル成長装置の縦断面図である。 １……外管、２……内管、３……細孔、４……ガス導入
口、５……ガス導入口、６……基板、７……基板ホルダ
ー、８……ノズル、９……架台、１０……真空排気口、
１１……抵抗加熱炉、１２……外管、１３……内管、１
４……細孔、１５……ガス導入口、１６……ガス導入
口、１７……基板、１８……基板ホルダー、１９……ノ
ズル、２０……架台、２１……真空排気口、２２……抵
抗加熱炉、２３……外管、２４……内管、２５……細
孔、２６……真空排気口、２７……基板、２８……基板
ホルダー、２９……ノズル、３０……ノズル、３１……
架台、３２……抵抗加熱炉、３３……反応管、３４……
赤外線加熱炉、３５……基板、３６……サセプタ、３７
……排気口、３８……ノズル、39……熱電対、４０……
ガス導入口、４１……反応管、４２……サセプタ、４３
……ノズル、４４……排気口、４５……基板、４６……
高周波加熱炉。1 is a vertical sectional view of a Si vapor phase epitaxial growth apparatus used in the first embodiment of the present invention, FIG. 2 is a vertical sectional view of a growth apparatus used in the second embodiment of the present invention, and FIG. It is a longitudinal cross-sectional view of the growth apparatus used in the 3rd Example of this invention. 4 and 5 are vertical sectional views of a conventional Si vapor phase epitaxial growth apparatus. 1 ... Outer tube, 2 ... Inner tube, 3 ... Pore, 4 ... Gas inlet, 5 ... Gas inlet, 6 ... Substrate, 7 ... Substrate holder, 8 ... Nozzle, 9 ... … Cradle, 10 …… Vacuum exhaust port,
11 ... Resistance heating furnace, 12 ... Outer tube, 13 ... Inner tube, 1
4 ... Pore, 15 ... Gas inlet, 16 ... Gas inlet, 17 ... Substrate, 18 ... Substrate holder, 19 ... Nozzle, 20 ... Stand, 21 ... Vacuum exhaust port, 22 ... ... Resistance heating furnace, 23 ... Outer tube, 24 ... Inner tube, 25 ... Pores, 26 ... Vacuum exhaust port, 27 ... Substrate, 28 ... Substrate holder, 29 ... Nozzle, 30 ... Nozzle , 31 ……
Frame, 32 ... Resistance heating furnace, 33 ... Reaction tube, 34 ...
Infrared heating furnace, 35 ... Substrate, 36 ... Susceptor, 37
...... Exhaust port, 38 ...... Nozzle, 39 ...... Thermocouple, 40 ......
Gas inlet, 41 ... Reaction tube, 42 ... Susceptor, 43
...... Nozzle, 44 ...... Exhaust port, 45 ...... Substrate, 46 ......
High frequency heating furnace.
Claims (4)
ガスを混合したガスと、水素ガスとをシリコンを成長さ
すべき基板の近傍まで、それぞれ別々に分離して供給す
ることを特徴とするシリコン気相エピタキシャル成長方
法。1. A silicon gas characterized by separately supplying a gas obtained by mixing hydrogen chloride gas or chlorine gas with a silane-based gas and hydrogen gas to the vicinity of a substrate on which silicon is to be grown separately. Phase epitaxial growth method.
記基板の近傍まで、それぞれ別々に分離して供給する方
法は、縦型抵抗加熱炉内に設置された反応管内に、複数
枚のシリコン単結晶基板を任意の間隔をもたせて積み重
ねるように水平に保持するシリコンの気相エピタキシャ
ル成長装置を用いて、前記混合ガスを前記基板近傍に開
口部を有するノズルにより供給し、前記水素ガスを別の
流路より前記反応管内に導入する方法である特許請求の
範囲第１項記載のシリコン気相エピタキシャル成長方
法。2. A method of separately supplying the mixed gas and the hydrogen gas up to the vicinity of the substrate by separately supplying a plurality of sheets in a reaction tube installed in a vertical resistance heating furnace. Using a silicon vapor phase epitaxial growth apparatus that horizontally holds silicon single crystal substrates so that they are stacked at arbitrary intervals, the mixed gas is supplied by a nozzle having an opening near the substrate, and the hydrogen gas is separated. 2. The silicon vapor phase epitaxial growth method according to claim 1, which is a method of introducing the silicon gas into the reaction tube from the flow path.
る方法は、縦型抵抗加熱炉内に設置された反応管が、外
管及び壁面に均一に分布する細孔を有する内管とから成
る２重管構成であるエピタキシャル成長装置を用いて、
該装置の前記外管と前記内管との間隙及び前記内管の細
孔を通して前記水素ガスを前記基板の表面に供給する方
法である特許請求の範囲第(1)項記載のシリコン気相エ
ピタキシャル成長方法。3. A method for supplying the hydrogen gas to the vicinity of the substrate is characterized in that a reaction tube installed in a vertical resistance heating furnace comprises an outer tube and an inner tube having pores uniformly distributed on a wall surface. Using an epitaxial growth system with a double tube structure
The silicon vapor phase epitaxial growth according to claim (1), which is a method of supplying the hydrogen gas to the surface of the substrate through a gap between the outer tube and the inner tube and pores of the inner tube of the apparatus. Method.
前記基板の近傍まで、それぞれ別々に分離して供給する
方法は、縦型抵抗加熱炉内に設置された反応管内へ前記
混合したガスを前記基板の近傍に開口部を有するノズル
で供給し、前記水素ガスを前記基板の近傍に開口部を有
する別のノズルを用いて供給する方法である特許請求の
範囲第(1)項記載のシリコン気相エピタキシャル成長方
法。4. The mixed gas and the hydrogen gas,
The method of separately supplying the mixed gas up to the vicinity of the substrate is performed by supplying the mixed gas into a reaction tube installed in a vertical resistance heating furnace with a nozzle having an opening near the substrate, The silicon vapor phase epitaxial growth method according to claim (1), which is a method of supplying hydrogen gas using another nozzle having an opening near the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16720986A JPH0616495B2 (en) | 1986-07-15 | 1986-07-15 | Silicon vapor phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16720986A JPH0616495B2 (en) | 1986-07-15 | 1986-07-15 | Silicon vapor phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6321822A JPS6321822A (en) | 1988-01-29 |
| JPH0616495B2 true JPH0616495B2 (en) | 1994-03-02 |
Family
ID=15845443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16720986A Expired - Lifetime JPH0616495B2 (en) | 1986-07-15 | 1986-07-15 | Silicon vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0616495B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5245380B2 (en) | 2007-06-21 | 2013-07-24 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
-
1986
- 1986-07-15 JP JP16720986A patent/JPH0616495B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6321822A (en) | 1988-01-29 |
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