JPH0616497B2 - <III>-<V> Group compound semiconductor vapor phase growth method - Google Patents
<III>-<V> Group compound semiconductor vapor phase growth methodInfo
- Publication number
- JPH0616497B2 JPH0616497B2 JP23652286A JP23652286A JPH0616497B2 JP H0616497 B2 JPH0616497 B2 JP H0616497B2 JP 23652286 A JP23652286 A JP 23652286A JP 23652286 A JP23652286 A JP 23652286A JP H0616497 B2 JPH0616497 B2 JP H0616497B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- iii
- compound semiconductor
- phase growth
- group compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 25
- 238000001947 vapour-phase growth Methods 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 title claims description 16
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 30
- 239000007789 gas Substances 0.000 description 14
- 229910052742 iron Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- -1 iron halide Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半絶縁性のIII−Ｖ族化合物半導体をエピタ
キシャル成長する気相成長方法に関するものである。TECHNICAL FIELD The present invention relates to a vapor phase growth method for epitaxially growing a semi-insulating III-V compound semiconductor.
半絶縁性のエピタキシャル成長層は、光デバイス，特に
埋め込み型半導体レーザの電流阻止層、高速動作する電
界効果トランジスタのバッファ層、さらに光一電子複合
集積デバイスの電気的分離層等として有望視され、用い
られつつある。The semi-insulating epitaxial growth layer is expected and used as an optical device, particularly a current blocking layer of a buried semiconductor laser, a buffer layer of a high-speed field-effect transistor, and an electrical isolation layer of an optoelectronic composite integrated device. It's starting.
この半絶縁性半導体層を成長する方法としての気相成長
方法は、制御性や量産性に優れるという特徴を有してい
る。The vapor phase growth method as a method for growing the semi-insulating semiconductor layer is characterized by excellent controllability and mass productivity.
従来の半絶縁性III−Ｖ族化合物半導体の成長方法は、
第３図に示すような気相成長装置を用いて行われてきた
（ジャーナル・エレクトロケミカル・ソサエティ（Ｊ．
Ｅｌｅｃｔｒｏｃｈｅｍ．Ｓｏｃ．）１２４巻，１９７
７年，１６３５〜１６４０頁）。The conventional method for growing a semi-insulating III-V compound semiconductor is
It has been carried out using a vapor phase growth apparatus as shown in FIG. 3 (Journal Electrochemical Society (J.
Electrochem. Soc. ) 124, 197
7 years, 1635-1640).
第３図の従来例では、ハライド輸送法の中でＶ族元素を
クロライドガスとして供給するクロライド気相成長方法
を用いており、それによってＦｅ（鉄）ドープ半絶縁性
ＧａＡｓ層を成長させている。加熱炉３６により反応管
３７内に設置されたIII族原料金属のＧａ３４および基
板３５のＧａＡｓをそれぞれ８５０℃および６７０℃に
加熱する。他方、導入管３８の上流側に設けられた鉄反
応室３３に半絶縁性半導体層を得るための不純物元素と
なるＦｅ３２を入れ、専用の加熱炉３１で加熱し、３７
０〜５５０℃の範囲内に温度制御する。鉄反応室３３に
Ｈｃｌを導入するとＦｅとＨｃｌが反応し固体のＦｅｃ
ｌ２が生成される。生成されたＦｅＣｌ２は、その温度
における蒸気圧により一部がＦｅＣｌ２ガスとなり、導
入管３８を通じて反応管３７に導かれる。一方、供給管
３９には、Ａｓｃｌ３を供給する。Ａｓｃｌ３は高温に
加熱されたＧａ３４と反応し、ＧａＡｓの成長ガス雰囲
気が形成され、反応管３７内に導入される。このように
して、基板３５上にＦｅドープ半絶縁性ＧａＡｓが成長
する。この例では抵抗率として１０５Ωcm台の値が得ら
れた。In the conventional example of FIG. 3, a chloride vapor phase growth method of supplying a Group V element as chloride gas is used in the halide transport method, and thereby a Fe (iron) -doped semi-insulating GaAs layer is grown. . A heating furnace 36 heats Ga34, which is a group III source metal, and GaAs, which is the substrate 35, installed in the reaction tube 37 to 850 ° C. and 670 ° C., respectively. On the other hand, Fe32, which is an impurity element for obtaining the semi-insulating semiconductor layer, is placed in the iron reaction chamber 33 provided on the upstream side of the introduction pipe 38, and heated in a dedicated heating furnace 31,
The temperature is controlled within the range of 0 to 550 ° C. When Hcl is introduced into the iron reaction chamber 33, Fe and Hcl react with each other to form solid Fec.
l 2 is generated. The generated FeCl 2 is part by the vapor pressure at that temperature becomes FeCl 2 gas is led into the reaction tube 37 through the introduction pipe 38. On the other hand, Ascl 3 is supplied to the supply pipe 39. Ascl 3 reacts with Ga 34 heated to a high temperature to form a growth gas atmosphere of GaAs and is introduced into the reaction tube 37. In this way, the Fe-doped semi-insulating GaAs is grown on the substrate 35. In this example, a resistivity on the order of 10 5 Ωcm was obtained.
従来の半絶縁性III−Ｖ族化合物半導体の気相成長方法
では、鉄の表面が生成された固体のＦｅＣｌ２でいった
ん被われ始めると、鉄反応室３３に供給された全てのＨ
ｃｌがＦｅと反応することはできなくなり、一部が未反
応のまま反応管３７内へ導入されることになる。その結
果、特にＨｃｌに対して反応性が高い、例えばＩｎＰの
ような半導体を成長させようとすると、結晶性が低下し
てしまうという問題が生じた。In the conventional vapor phase growth method for semi-insulating III-V compound semiconductor, once the surface of iron begins to be covered with the solid FeCl 2 produced, all the H supplied to the iron reaction chamber 33 is removed.
Cl cannot react with Fe, and a part of the cl is introduced into the reaction tube 37 in an unreacted state. As a result, there is a problem that the crystallinity is lowered when a semiconductor having a high reactivity with Hcl, for example, InP is grown.
又、ＦｅＣｌ２ガスの輸送量を設定した温度で決まるＦ
ｅＣｌ２の蒸気圧を用いて制御しようとしても成長毎の
鉄反応室３３の温度は微妙に変化してしまうので輸送量
も大きく変化してしまい、成長した半導体層の抵抗率の
制御性，再現性が悪いという問題があった。さらに、従
来の装置では不純物元素を加熱するための専用の加熱炉
３１が必要であった。In addition, F determined by the set temperature of the FeCl 2 gas transport amount
Even if the vapor pressure of eCl 2 is used to control the temperature, the temperature of the iron reaction chamber 33 slightly changes for each growth, so that the transport amount also largely changes, and the controllability and reproduction of the resistivity of the grown semiconductor layer There was a problem of poor sex. Further, the conventional apparatus requires a dedicated heating furnace 31 for heating the impurity element.
以上の問題点は、鉄ハライドガスの発生及び輸送方法に
おける問題があるため、III−Ｖ族化合物半導体の成長
雰囲気を形成する方法とは関係がない。従って、これら
の問題点は、従来例で挙げたクロライド気相成長装置特
有の問題ではない。The above problems are not related to the method for forming the growth atmosphere of the III-V group compound semiconductor because of the problems in the method of generating and transporting the iron halide gas. Therefore, these problems are not the problems peculiar to the chloride vapor phase growth apparatus described in the conventional example.
本発明の目的は、高品質の半絶縁性III−Ｖ族化合物半
導体層を成長するための制御性・再現性に優れた気相成
長方法を提供することにある。An object of the present invention is to provide a vapor phase growth method with excellent controllability and reproducibility for growing a high quality semi-insulating III-V group compound semiconductor layer.
本発明のIII−Ｖ族化合物半導体の気相成長方法は、成
長ガスおよびドーパントガスを反応管の反応領域に導き
該領域に設置された基板上に半絶縁性のIII−Ｖ族化合
物半導体を気相成長させるIII−Ｖ族化合物半導体の気
相成長方法において、前記ドーパントガスの原料として
四塩化チタニウムを用いることを特徴として構成され
る。The III-V compound semiconductor vapor phase growth method of the present invention introduces a semi-insulating III-V compound semiconductor onto a substrate placed in a reaction region of a reaction tube by introducing a growth gas and a dopant gas into the reaction region. The vapor phase growth method of III-V group compound semiconductor for phase growth is characterized by using titanium tetrachloride as a raw material of the dopant gas.
四塩化チタニウム（Ｔｉｃｌ４）は、室温では液体であ
るが、蒸気圧は、約１０Ｔｏｒｒと高い。従って、この
四塩化チタニウムのガスを流量制御することが可能であ
り、ドーピング量の制御性や再現性は極めて高い。又、
四塩化チタニウムは、III−Ｖ族化合物半導体自身の成
長を阻害することなく結晶性に優れた成長層が得られ
る。Titanium tetrachloride (Ticl 4 ) is a liquid at room temperature, but has a high vapor pressure of about 10 Torr. Therefore, the flow rate of this titanium tetrachloride gas can be controlled, and the controllability and reproducibility of the doping amount are extremely high. or,
With titanium tetrachloride, a growth layer having excellent crystallinity can be obtained without inhibiting the growth of the III-V group compound semiconductor itself.
III−Ｖ族化合物半導体例えばＩｎＰにＴｉがドーピン
グされると、鉄がドーピグされたときと同様にＩｎＰの
伝導帯下の深い位置（Ｔｉでは０．６３ｅＶ）に不純物
準位が形成される。この不純物準位がＩｎＰのキャリア
を捕獲して、キャリア濃度が激減し、ＩｎＰが高抵抗化
する。When a III-V group compound semiconductor such as InP is doped with Ti, an impurity level is formed at a deep position (0.63 eV for Ti) under the conduction band of InP, similar to when iron is doped. This impurity level captures InP carriers, the carrier concentration is drastically reduced, and InP has a high resistance.
半絶縁性半導体を得るためのドーパント用原料として
は、有機金属化合物，例えばビスシクロペンタディエニ
ル鉄（Ｆｅ（Ｃ５Ｈ５）２）や鉄ペンタカルボニル（Ｆ
ｅ（ＣＯ）５）がある。しかし、これら有機金属化合物
を用いると、鉄の他に炭素原子や酸素原子が半導体層に
混入しやすく、高純度結晶が得られにくい。一方、四塩
化チタニウムはチタニウム（Ｔｉ）のみがドーピングさ
れ高純度結晶が得られる。As a raw material for a dopant for obtaining a semi-insulating semiconductor, an organic metal compound such as biscyclopentadienyl iron (Fe (C 5 H 5 ) 2 ) or iron pentacarbonyl (F) is used.
e (CO) 5 ). However, when these organometallic compounds are used, carbon atoms and oxygen atoms are easily mixed into the semiconductor layer in addition to iron, and it is difficult to obtain high-purity crystals. On the other hand, titanium tetrachloride is doped with only titanium (Ti) to obtain a high-purity crystal.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は、本発明の第１の実施例を説明するためのＴｉ
ドープ半絶縁性ＩｎＰ層を成長させる気相成長装置の概
略図である。成長法としてはＶ族元素を水素化ガスとし
て供給するハイドライド気相成長法を用いた。Ｔｉドー
プＩｎＰ成長を行うため、Ｈｃｌ１０ｃｃ／ｍｉｎを含
むＨ２を供給管１２に導入し、ＰＨ３１５ｃｃ／ｍｉｎ
および四塩化チタニウム１×１０−５ｃｃ／ｍｉｎを含
むＨ２を導入管１１を流した。反応管１５に流れるガス
の流量は全体で３／ｍｉｎとした。この時、反応管１
５を加熱する加熱炉１６により、Ｉｎ１３の温度は８３
０℃，基板（ＩｎＰ）１４の温度は６００℃に加熱し
た。この条件で得られたＴｉドープＩｎＰの抵抗率は１
０６Ωｃｍ以上であった。得られた膜に対し、４Ｋにお
けるホトルミネッセンス特性を調べたところ、アンドー
プ時のＩｎＰと比較して炭素等の不純物の混入はみられ
ず、高純度であることが分かった。FIG. 1 shows Ti for explaining the first embodiment of the present invention.
FIG. 3 is a schematic view of a vapor phase growth apparatus for growing a doped semi-insulating InP layer. As the growth method, a hydride vapor phase epitaxy method in which a Group V element is supplied as a hydrogenated gas was used. In order to carry out Ti-doped InP growth, H 2 containing Hcl of 10 cc / min was introduced into the supply pipe 12, and PH 3 of 15 cc / min.
H 2 containing 1 × 10 −5 cc / min of titanium tetrachloride was introduced into the introduction pipe 11. The flow rate of gas flowing through the reaction tube 15 was 3 / min in total. At this time, the reaction tube 1
The temperature of In13 is 83 by the heating furnace 16 for heating
The temperature of the substrate (InP) 14 was 0 ° C. and 600 ° C. The resistivity of Ti-doped InP obtained under these conditions is 1
It was 0 6 Ωcm or more. When the photoluminescence characteristics of the obtained film at 4K were examined, it was found that impurities such as carbon were not mixed in compared with InP when undoped, and the film had a high purity.
本実施例では、Ｈ２で希釈された四塩化チタニウムのボ
ンベを使用しており、流量制御が容易で再現性も良好で
あった。In this example, a cylinder of titanium tetrachloride diluted with H 2 was used, and the flow rate control was easy and the reproducibility was good.
第２図は、本発明の第２の実施例を説明するための縦型
反応管の有機金属気相成長装置の概略図である。第２の
実施例では、この装置を用いてＴｉドープＧａＡｓの成
長を行った。四塩化チタニウムは第１の実施例と同様、
Ｈ２で希釈されたボンベづめである。カーボンサセプタ
２３は高周波誘導加熱により加熱され、同時に基板（Ｇ
ａＡｓ）２２も加熱される。成長ガスとしてトリメチル
ガリウム（Ｇａ（ＣＨ３）３）１ｃｃ／ｍｉｎ，ＡｓＨ
３３０ｃｃ／ｍｉｎおよびドーパンドガスとし四塩化チ
タニウム１×１０−５ｃｃ／ｍｉｎをＨ２とともに導入
管２１に流した。反応管２４に流れるガスの全流量は、
３．５／ｍｉｎ，基板温度は６５０℃とした。この条
件で得られたＴｉドープＧａＡｓの抵抗率は１０５Ωｃ
ｍ以上であり、本発明では、有機金属気相成長方法を用
いても、ハライド輸送法による気相成長方法を用いても
半絶縁性半導体層が得られた。FIG. 2 is a schematic view of a vertical reaction tube metal-organic vapor phase epitaxy apparatus for explaining a second embodiment of the present invention. In the second embodiment, Ti-doped GaAs was grown using this apparatus. Titanium tetrachloride is the same as in the first embodiment.
It is a cylinder filled with H 2 . The carbon susceptor 23 is heated by high frequency induction heating, and at the same time, the substrate (G
aAs) 22 is also heated. Trimethylgallium (Ga (CH 3 ) 3 ) 1 cc / min, AsH as a growth gas
3 × 30 cc / min and 1 × 10 −5 cc / min of titanium tetrachloride used as a dopant gas were flown into the introducing pipe 21 together with H 2 . The total flow rate of the gas flowing through the reaction tube 24 is
The temperature was 3.5 / min and the substrate temperature was 650 ° C. The resistivity of Ti-doped GaAs obtained under these conditions is 10 5 Ωc
m or more, and in the present invention, a semi-insulating semiconductor layer was obtained using either the metal organic vapor phase epitaxy method or the vapor phase epitaxy method by the halide transport method.
上記実施例ではハイドライド気相成長方法および有機金
属気相成長方法を用いたが、クロライド気相成長方法に
も適用できる。Although the hydride vapor phase epitaxy method and the metalorganic vapor phase epitaxy method are used in the above-mentioned examples, the present invention can also be applied to the chloride vapor phase epitaxy method.
上記実施例では四塩化チタニウムの輸送にＨ２希釈ボン
ベを用いたが、本発明はこの方法に限定されず、キャリ
アガスのバブリングによる輸送でも良い。Although the H 2 diluted cylinder was used to transport titanium tetrachloride in the above examples, the present invention is not limited to this method, and carrier gas may be transported by bubbling.
又、上記実施例では半絶縁性成長層をＩｎＰやＧａＡｓ
としたが、本発明はこれらに限定されず、ＩｎＧａＡｓ
Ｐ系多元混晶やＡｌＧａＡｓにも適用できる。Further, in the above embodiment, the semi-insulating growth layer is made of InP or GaAs.
However, the present invention is not limited to these, and InGaAs
It can also be applied to P-based multi-element mixed crystals and AlGaAs.
本発明の気相成長方法を用いれば、従来技術で必要とさ
れた鉄反応室やその加熱炉が不要で、結晶性に優れた半
絶縁性III−Ｖ族化合物半導体が、制御性，再現性良く
得られる。この方法で得られる半絶縁性III−Ｖ族化合
物半導体を従来のＰ型，ｎ型半導体層を用いる代わりに
電流阻止用の埋め込み層として用いれば、寄生容量が低
減されて高速変調可能な半導体レーザが実現できる。ま
た光一電子複合集積素子の素子分離層としての応用も可
能である。By using the vapor phase growth method of the present invention, a semi-insulating III-V group compound semiconductor excellent in crystallinity can be obtained with controllability and reproducibility without the iron reaction chamber and its heating furnace required in the prior art. Well obtained. If the semi-insulating III-V compound semiconductor obtained by this method is used as a buried layer for blocking current instead of using the conventional P-type and n-type semiconductor layers, a semiconductor laser with reduced parasitic capacitance and capable of high-speed modulation Can be realized. Further, it can be applied as an element separation layer of an optoelectronic composite integrated element.
第１図は本発明の第１の実施例を説明するための気相成
長装置の概略図，第２図は本発明の第２の実施例を説明
するための気相成長装置の概略図，第３図は従来例を説
明するための従来の気相成長装置の概略図である。 １１，２１，３８……導入管、１２，３９……供給管，
１３……Ｉｎ、１４，２２，３５……基板、１５，２
４，３７……反応管、１６，３１，３６……加熱炉、２
３……カーボンサセプタ、３２……Ｆｅ、３３……鉄加
熱炉、３４……Ｇａ。FIG. 1 is a schematic view of a vapor phase growth apparatus for explaining the first embodiment of the present invention, and FIG. 2 is a schematic view of a vapor phase growth apparatus for explaining the second embodiment of the present invention. FIG. 3 is a schematic view of a conventional vapor phase growth apparatus for explaining a conventional example. 11,21,38 ... Introduction pipe, 12,39 ... Supply pipe,
13 ... In, 14, 22, 35 ... Substrate, 15, 2
4, 37 ... Reaction tube, 16, 31, 36 ... Heating furnace, 2
3 ... Carbon susceptor, 32 ... Fe, 33 ... Iron heating furnace, 34 ... Ga.
Claims (1)
反応領域に導き該領域に設置された基板上に半絶縁性の
III−Ｖ族化合物半導体を気相成長させるIII−Ｖ族化合
物半導体の気相成長方法において、前記ドーパントガス
の原料として四塩化チタニウムを用いることを特徴とす
るIII−Ｖ族化合物半導体の気相成長方法。1. A growth gas and a dopant gas are introduced into a reaction region of a reaction tube, and a semi-insulating material is provided on a substrate placed in the reaction region.
In the vapor phase growth method of a III-V group compound semiconductor for vapor-phase growing a III-V group compound semiconductor, titanium tetrachloride is used as a raw material of the dopant gas, and the vapor phase growth of a III-V group compound semiconductor is performed. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23652286A JPH0616497B2 (en) | 1986-10-03 | 1986-10-03 | <III>-<V> Group compound semiconductor vapor phase growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23652286A JPH0616497B2 (en) | 1986-10-03 | 1986-10-03 | <III>-<V> Group compound semiconductor vapor phase growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6390820A JPS6390820A (en) | 1988-04-21 |
| JPH0616497B2 true JPH0616497B2 (en) | 1994-03-02 |
Family
ID=17001943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23652286A Expired - Fee Related JPH0616497B2 (en) | 1986-10-03 | 1986-10-03 | <III>-<V> Group compound semiconductor vapor phase growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0616497B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2781209B2 (en) * | 1989-06-20 | 1998-07-30 | 富士通株式会社 | Method for producing compound semiconductor mixed crystal |
-
1986
- 1986-10-03 JP JP23652286A patent/JPH0616497B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6390820A (en) | 1988-04-21 |
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