JPH0618186B2 - Semiconductor substrate inclined edge surface formation method - Google Patents
Semiconductor substrate inclined edge surface formation methodInfo
- Publication number
- JPH0618186B2 JPH0618186B2 JP17510687A JP17510687A JPH0618186B2 JP H0618186 B2 JPH0618186 B2 JP H0618186B2 JP 17510687 A JP17510687 A JP 17510687A JP 17510687 A JP17510687 A JP 17510687A JP H0618186 B2 JPH0618186 B2 JP H0618186B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- substrate
- face
- formation method
- edge surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、光電子集積回路装置等の傾斜端面形成法に関
するものである。Description: TECHNICAL FIELD The present invention relates to a method for forming an inclined end face of an optoelectronic integrated circuit device or the like.
（従来の技術） 近年、半導体レーザー装置を同一基板内に多数集積した
光・電子集積回路が開発され、このための垂直端面ミラ
ー形成技術として、ドライエッチングによる微細加工技
術が注目されて来た。更に最近では、前記共振器垂直端
面ミラーの外部に、これと近接せしめて所望の角度を有
する傾斜ミラーを形成し、レーザーの出射光を、該傾斜
ミラーで反射せしめ基盤に垂直な方向に取り出すという
面出射型半導体レーザーが提案されている。(Prior Art) In recent years, an optical / electronic integrated circuit in which a large number of semiconductor laser devices are integrated in the same substrate has been developed, and a fine processing technique by dry etching has attracted attention as a vertical end face mirror forming technique therefor. More recently, a tilted mirror having a desired angle is formed outside the resonator vertical end face mirror so as to be close to the mirror, and the emitted light of the laser is reflected by the tilted mirror and taken out in a direction perpendicular to the substrate. Surface emitting semiconductor lasers have been proposed.
このような構造を実現するために所望の角度を有する傾
斜ミラーをドライエッチングにより加工する必要があ
る。このような加工をするために、従来知られた方法を
第２図に示す。図において21は半導体レーザ基板、22は
レジストマスク、23は反応性プラズマシャワーである。
この反応性プラズマシャワー23は基板と角度24を有する
25で示す方向に照射する。この様な配置でエッチングを
行うと同図(b)に示されるように傾斜端面28が得られ
る。In order to realize such a structure, it is necessary to process a tilted mirror having a desired angle by dry etching. A conventionally known method for performing such processing is shown in FIG. In the figure, 21 is a semiconductor laser substrate, 22 is a resist mask, and 23 is a reactive plasma shower.
This reactive plasma shower 23 has an angle 24 with the substrate
Irradiate in the direction indicated by 25. When the etching is performed in such an arrangement, an inclined end face 28 is obtained as shown in FIG.
（従来技術の問題点） 従来知られている方法では、ポジ型レジスト（例えばＭ
Ｐ1300-31）を一般的なポストベイク温度100〜115℃程
度でポストベイクを行うと前記レジストマスク端面は、
現像によりパターンを形成した時と同じく、基板表面に
ほぼ垂直に近い断面形状が保たれる。このようなレジス
トパターンをマスク材として反応性プラズマシャワーに
よる斜めエッチングを行うと第２図(b)に示すようにレ
ジストマスク端部の角26がイオン衝撃により損耗を受け
て後退する。これにより傾斜端面上部に凹凸27が発生
し、傾斜面の平坦性が損われる。以上、従来の方法では
全面にわたって平坦なミラー面の傾斜端面を得ることが
むずかしく、特に長時間のエッチングが必要な場合には
レジストの後退が大きく多大の困難が伴う。(Problems of Prior Art) In the conventionally known method, a positive resist (for example, M
P1300-31) is post-baked at a general post-baking temperature of 100 to 115 ° C., the end surface of the resist mask is
Similar to the case where the pattern is formed by the development, the cross-sectional shape which is almost vertical to the substrate surface is maintained. When diagonal etching is performed by a reactive plasma shower using such a resist pattern as a mask material, as shown in FIG. 2 (b), the corner 26 at the end of the resist mask is damaged by ion impact and recedes. As a result, unevenness 27 is generated on the upper part of the inclined end surface, and the flatness of the inclined surface is impaired. As described above, according to the conventional method, it is difficult to obtain a slanted end face of a flat mirror surface over the entire surface, and particularly when etching for a long time is required, the resist recedes and the difficulty is great.
（問題点を解決するための手段） 本発明は、上述の如き従来の問題点に着目してなされた
ものであって、その構成では、半導体基板表面上に予め
マスクパターンを形成した後ドライエッチング法を用い
て前記基板表面と傾斜角をなす傾斜端面を形成する方法
において、前記半導体基板表面上に設けたレジストマス
ク開口部の端面を前記基板表面に傾斜させた後イオンビ
ームを前記半導体基板表面に斜めに傾斜してドライエッ
チングを行うことを特徴とする傾斜端面形成法にある。(Means for Solving Problems) The present invention has been made by paying attention to the conventional problems as described above, and in the configuration thereof, a mask pattern is previously formed on the surface of a semiconductor substrate and then dry etching is performed. In the method of forming an inclined end face forming an inclination angle with the substrate surface using a method, an end face of a resist mask opening provided on the semiconductor substrate surface is inclined to the substrate surface, and then an ion beam is applied to the semiconductor substrate surface. There is a method of forming an inclined end surface, which is characterized in that the dry etching is performed with an oblique inclination.
（作用） 本発明によればレジストマスク開口部の端面の基板表面
との傾斜角を半導体基板に形成しようとする傾斜端面の
所望の傾斜角とほぼ同じにすることにより、レジストマ
スクのエッヂ部の後退がなく、全面にわたって平坦なミ
ラー面を有する傾斜端面を形成することができる。(Function) According to the present invention, the inclination angle of the end face of the resist mask opening with respect to the substrate surface is made substantially the same as the desired inclination angle of the inclined end face to be formed on the semiconductor substrate, whereby the edge portion of the resist mask is formed. It is possible to form an inclined end face having a flat mirror surface over the entire surface without receding.
（実施例） 以下、本発明の実施例を工程ごとの断面図により第１図
に示す。同図(a)においてAlGaAs系レーザー基板11の表
面にポジ型レジスト12を厚さ1.5μｍに塗布して露光、
現像を行って所望のパターンを形成する。次にポストベ
イクの温度を通常のよりも高い135℃として、同図(b)に
示すようにレジストマスク開口部の端面14が基板表面に
対して約45゜の傾斜角を持つようにする。次にこのよう
なレジストパターンをマスクとして斜めエッチングが行
なわれ、傾斜面15が形成される。この時の斜めエッチン
グには、純塩素(Cl2)ガスの放電プラズマを利用した反
応性イオンビームエッチングを用い、基板11を反応性プ
ラズマシャワー13に対して45゜の感度をなすように配置
する。エッチング条件をCl2ガス圧８×10-4Torr、イオ
ン引出電圧400Ｖ、エッチング時間３５分間とすること
により、基板表面からの深さが３μｍの傾斜溝が得られ
る。(Example) Hereinafter, an example of the present invention will be shown in FIG. 1 by a sectional view of each step. In the same figure (a), the positive type resist 12 is applied to the surface of the AlGaAs laser substrate 11 to a thickness of 1.5 μm and exposed.
Development is performed to form the desired pattern. Next, the temperature of the post bake is set to 135 ° C. which is higher than usual, so that the end face 14 of the resist mask opening has an inclination angle of about 45 ° with respect to the substrate surface as shown in FIG. Next, diagonal etching is performed using such a resist pattern as a mask to form the inclined surface 15. For the oblique etching at this time, reactive ion beam etching using discharge plasma of pure chlorine (Cl 2 ) gas is used, and the substrate 11 is arranged so as to have a sensitivity of 45 ° with respect to the reactive plasma shower 13. . By setting the etching conditions as Cl 2 gas pressure of 8 × 10 −4 Torr, ion extraction voltage of 400 V, and etching time of 35 minutes, an inclined groove having a depth of 3 μm from the substrate surface can be obtained.
本実施例では、基板表面に対して45゜の傾斜面を形成す
る場合を説明したが、その他の角度の傾斜面を形成する
場合でも、レジストマスクのポストベイク温度を調整す
ることにより、レジストマスク開口部の端面の傾斜角を
所望の角度に設定できるため、本発明は実施可能であ
る。In this embodiment, the case where the inclined surface of 45 ° is formed with respect to the substrate surface has been described. However, even when the inclined surface of other angles is formed, the resist bake temperature is adjusted by adjusting the post bake temperature of the resist mask. The present invention can be implemented because the inclination angle of the end surface of the portion can be set to a desired angle.
（発明の効果） 本発明では、レジストマスク開口部の端面を反応性プラ
ズマシャワーの入射方向と平行とすることにより斜めエ
ッチング中にレジスト端部の後退による傾斜面上部の凹
凸発生がなく、全面にわたって平坦な傾斜面を得ること
ができる。(Effect of the Invention) In the present invention, by making the end surface of the resist mask opening parallel to the incident direction of the reactive plasma shower, there is no unevenness on the upper part of the inclined surface due to the receding of the resist end during oblique etching, and the entire surface is covered. A flat inclined surface can be obtained.
第１図は、本発明の実施例を示す工程図、第２図は、従
来例の工程図である。 また、11，12……レーザー基板、12，22……レジストマ
スク、13，23……反応性プラズマシャワー、14……レジ
スト端面、15，28……傾斜面、24……基板との角度、25
……反応性プラズマシャワーの方向、26……レジストマ
スク端部の角、27……傾斜面の凹凸である。FIG. 1 is a process drawing showing an embodiment of the present invention, and FIG. 2 is a process drawing of a conventional example. Also, 11,12 ... laser substrate, 12,22 ... resist mask, 13,23 ... reactive plasma shower, 14 ... resist end face, 15,28 ... tilted surface, 24 ... angle with substrate, twenty five
... direction of reactive plasma shower, 26 ... corner of resist mask edge, 27 ... unevenness of inclined surface.
Claims (1)
形成した後ドライエッチング法を用いて前記基板表面と
傾斜角をなす傾斜端面を形成する方法において、前記半
導体基板表面上に設けたレジストマスク開口部の端面側
壁を前記基板表面に傾斜せしめて形成した後前記側壁の
１つの傾斜角と同じ方向からイオンビームを前記半導体
基板表面に照射してドライエッチングを行うことを特徴
とする半導体基板の傾斜端面形成法。1. A method of forming a mask pattern in advance on the surface of a semiconductor substrate and then forming an inclined end face forming an inclination angle with the surface of the substrate by using a dry etching method, wherein a resist mask opening provided on the surface of the semiconductor substrate. Of the end surface of the semiconductor substrate is formed by inclining it to the surface of the substrate, and then the surface of the semiconductor substrate is irradiated with an ion beam from the same direction as one inclination angle of the side wall to perform dry etching. End face forming method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17510687A JPH0618186B2 (en) | 1987-07-13 | 1987-07-13 | Semiconductor substrate inclined edge surface formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17510687A JPH0618186B2 (en) | 1987-07-13 | 1987-07-13 | Semiconductor substrate inclined edge surface formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6418227A JPS6418227A (en) | 1989-01-23 |
| JPH0618186B2 true JPH0618186B2 (en) | 1994-03-09 |
Family
ID=15990365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17510687A Expired - Lifetime JPH0618186B2 (en) | 1987-07-13 | 1987-07-13 | Semiconductor substrate inclined edge surface formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0618186B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11119405B2 (en) * | 2018-10-12 | 2021-09-14 | Applied Materials, Inc. | Techniques for forming angled structures |
-
1987
- 1987-07-13 JP JP17510687A patent/JPH0618186B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6418227A (en) | 1989-01-23 |
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