JPH0619860B2 - Magneto-optical record carrier - Google Patents
Magneto-optical record carrierInfo
- Publication number
- JPH0619860B2 JPH0619860B2 JP2221785A JP2221785A JPH0619860B2 JP H0619860 B2 JPH0619860 B2 JP H0619860B2 JP 2221785 A JP2221785 A JP 2221785A JP 2221785 A JP2221785 A JP 2221785A JP H0619860 B2 JPH0619860 B2 JP H0619860B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- magneto
- record carrier
- optical record
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052723 transition metal Inorganic materials 0.000 claims description 6
- -1 rare earth transition metal Chemical class 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 39
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Description
【発明の詳細な説明】 産業上の利用分野 本発明は情報の記録に用いられる光磁気メモリの記録担
体の改良に関するものである。Description: FIELD OF THE INVENTION The present invention relates to an improvement of a record carrier of a magneto-optical memory used for recording information.
従来の技術 近年、情報化社会の進展と共に書き換え可能な大容量光
ディスクの実用化が強く望まれている。その中で特に注
目を集めている光磁気メモリは、ディジタル・メモリと
してのすぐれた特性を有していることが最近になって確
かめられて来た。2. Description of the Related Art In recent years, it has been strongly desired to put a rewritable large-capacity optical disc into practical use as the information-oriented society advances. It has recently been confirmed that the magneto-optical memory, which has been attracting particular attention among them, has excellent characteristics as a digital memory.
ところで、光磁気記録担体は、記録感度を決定する主要
因であるキュリー温度、再生信号の品質を決定するカー
回転角、及び低温での膜作製等の制約から、希土類遷移
金属非晶質磁性体が用いられる。この希土類遷移金属
は、Fe,Co,Niのいずれか1種以上と、Gd,Tb,Dyを中
心とする希土類元素のいずれか1種以上に合金で構成さ
れる。具体的には、TbFe,GdTbFe,TbFeCoなどである。By the way, the magneto-optical record carrier is a rare-earth transition metal amorphous magnetic substance because of the Curie temperature, which is the main factor that determines the recording sensitivity, the Kerr rotation angle that determines the quality of the reproduction signal, and the constraints such as film formation at low temperature. Is used. This rare earth transition metal is composed of an alloy of at least one of Fe, Co and Ni and at least one of rare earth elements centered on Gd, Tb and Dy. Specifically, they are TbFe, GdTbFe, TbFeCo, and the like.
しかしながら、TbFeをはじめとするこれら希土類遷移金
属磁性体は、一般に耐食性が悪いという欠点を有してい
る。すなわち、希土類が極めて酸化しやすいため、大気
あるいは水蒸気に触れると磁気特性が変化し、さらに
は、膜面に対し垂直な磁化容易軸が損われ、最終的には
遷移金属も酸化されて透明になる。However, these rare earth-transition metal magnetic materials including TbFe generally have the drawback of poor corrosion resistance. That is, since rare earths are extremely susceptible to oxidation, their magnetic properties change when exposed to the atmosphere or water vapor, and the easy axis of magnetization perpendicular to the film surface is impaired, and eventually the transition metal is also oxidized and becomes transparent. Become.
このような欠点を除くために、従来から、光磁気記録担
体の構成に於いて、磁性体層の上に、例えば透明誘電体
であるSiOx,SiNx,Al2O3,AlN等の保護膜を設けたり、
あるいは不活性ガスにより封じ込めたディスク構造が提
案されている(例えば、特開昭59−140652号公
報)。In order to eliminate such a defect, conventionally, in the structure of a magneto-optical record carrier, a protective film such as SiOx, SiNx, Al 2 O 3 , AlN which is a transparent dielectric is provided on the magnetic layer. Set up,
Alternatively, a disk structure in which an inert gas is contained has been proposed (for example, JP-A-59-140652).
発明が解決しようとする問題点 しかしながら、酸化物あるいは窒化物から成る誘電体
膜、膜厚が薄いと耐食性に十分な効果が得られず、膜厚
が厚いとクラックが生じるなどの欠点を有し、十分な効
果は得られていない。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, a dielectric film made of an oxide or a nitride has a drawback that a thin film does not have a sufficient effect on corrosion resistance and a thick film causes cracks. , Not enough effect has been obtained.
また、不活性ガスを封じ込める構造に於いても、希土類
の酸化力が極めて強いため、不活性ガス中に含まれる微
量な酸素あるいは水蒸気のために、十分な効果は得られ
ていない。Further, even in the structure in which the inert gas is confined, the oxidizing effect of the rare earth is extremely strong, so that the sufficient effect cannot be obtained due to the small amount of oxygen or water vapor contained in the inert gas.
本発明は上記問題点に鑑み、適切な保護層により、従来
のものよりも耐食性の優れた光磁気記録担体を提供する
ものである。In view of the above-mentioned problems, the present invention provides a magneto-optical record carrier having a corrosion resistance superior to that of a conventional one by using an appropriate protective layer.
問題点を解決するための手段 この目的を達成するため本発明の光磁気記録担体は、基
板上に磁性膜を形成し、さらに誘電体膜とジルコニウム
膜を積層する構成となっている。誘電体膜及びジルコニ
ウム膜は、真空蒸着、またはスパッタリングなどの公知
の方法により、希土類遷移金属磁性層上に形成される。Means for Solving the Problems To achieve this object, the magneto-optical record carrier of the present invention has a structure in which a magnetic film is formed on a substrate and a dielectric film and a zirconium film are further laminated. The dielectric film and the zirconium film are formed on the rare earth transition metal magnetic layer by a known method such as vacuum deposition or sputtering.
これら一連の薄膜作製は、界面に於ける酸素、水蒸気の
吸着を避けるため、同一真空槽内にて行うことが望まし
い。It is desirable to carry out the series of thin film production in the same vacuum chamber in order to avoid adsorption of oxygen and water vapor at the interface.
作 用 誘電体膜は、磁性膜上に直接ジルコニウム膜を形成した
時に生ずる記録感度の低下を回避する役割を果たし、熱
伝導率の小さい酸化膜、窒化膜で構成される。この誘電
体膜の厚さは、1000Å〜5000Åが好ましい。こ
の下限よりも薄ければ断熱効果が不十分となり、記録感
度の低下が避けられない。またこの上限よりも厚ければ
クラックが生じ易くなり、逆に耐食性を悪化させる。一
方ジルコニウム膜の厚みは2000Å〜10000Åが
好ましい。この下限よりも薄ければ耐食効果は薄れ、保
護層として満足した機能を有することができない。また
この上限よりも厚ければ内部応力の増大により保護層の
はくりが生じる恐れがある。The working dielectric film plays a role of avoiding a decrease in recording sensitivity that occurs when the zirconium film is directly formed on the magnetic film, and is composed of an oxide film and a nitride film having a small thermal conductivity. The thickness of this dielectric film is preferably 1000Å to 5000Å. If the thickness is less than this lower limit, the heat insulation effect becomes insufficient, and a decrease in recording sensitivity cannot be avoided. If it is thicker than the upper limit, cracks are likely to occur, and on the contrary, corrosion resistance is deteriorated. On the other hand, the thickness of the zirconium film is preferably 2000Å to 10000Å. If it is less than this lower limit, the corrosion resistance effect is weakened and the protective layer cannot have a satisfactory function. On the other hand, if the thickness is more than the upper limit, peeling of the protective layer may occur due to an increase in internal stress.
この構成により、従来の光磁気記録担体と比較し、記録
感度の低下を招くことなく、従来に増して耐食性を向上
できる。With this configuration, as compared with the conventional magneto-optical record carrier, the corrosion resistance can be improved more than before without causing a decrease in recording sensitivity.
実施例 実施例1 以下本発明の一実施例について詳述する。Examples Example 1 An example of the present invention will be described in detail below.
薄膜形成には、電子ビーム蒸発源を2台装備した2元同
時蒸着装置を用いている。2×10−7Torrまで排気し
た後、直径120mmφのガラス基板を60rpmにて回転
させながらTbFe膜を約1000Å形成させる。それぞれ
の蒸着速度はTb4Å/sec,Fe6Å/secである。その後
直ちにSiOを10Å/secの蒸着速度で2000Å形成さ
せ、さらにジルコニウム膜を10Å/secの蒸着速度で
3000Å形成させる。このディスクをさらに紫外線硬
化樹脂にて別のガラス基板と貼り合わせる。このように
して作製された光磁気記録担体を用い、記録磁場300
oe、ディスク回転数600rpmにて記録した結果、直径
80mmの位置では、記録パワー3mW以下で記録すること
ができた。For the thin film formation, a binary simultaneous vapor deposition apparatus equipped with two electron beam evaporation sources is used. After evacuation to 2 × 10 −7 Torr, a glass substrate having a diameter of 120 mmφ is rotated at 60 rpm to form a TbFe film of about 1000 Å. The vapor deposition rates are Tb4Å / sec and Fe6Å / sec, respectively. Immediately thereafter, 2000 liters of SiO is formed at a vapor deposition rate of 10 liters / sec, and a zirconium film is further formed at 3000 liters at a vapor deposition rate of 10 liters / sec. This disk is further bonded to another glass substrate with an ultraviolet curable resin. Using the magneto-optical record carrier manufactured in this way, a recording magnetic field 300
As a result of recording at oe and disk rotation speed of 600 rpm, it was possible to record at a recording power of 3 mW or less at a position with a diameter of 80 mm.
比較のために、保護層を有しないもの、SiO2000Å
の保護層のみを有するもの、誘電体膜を介さず、磁性体
上ジルコニウム膜3000Åを直接形成させたものにつ
いての同様の条件で記録に必要なレーザパワーを下表に
示す。For comparison, those without a protective layer, SiO2000Å
The following table shows the laser power required for recording under the same conditions for those having only the protective layer, and those having the zirconium film 3000Å on the magnetic body directly formed without the dielectric film.
さらにこれら4種の記録担体について、温度60℃、相
対湿度90%の恒温恒湿槽に入れて耐食性試験を行っ
た。その結果を第1図に示す。耐食性を評価するパラメ
ータとして、希土類の選択酸化によって生じる保磁力の
変化量を、初期値を1として示した。保磁力変化の大き
いものほど、腐食の進行が激しいことを示している。ジ
ルコニウム膜により、耐食性が向上することがわかる。 Furthermore, these four types of record carriers were put in a constant temperature and constant humidity chamber at a temperature of 60 ° C. and a relative humidity of 90% to perform a corrosion resistance test. The results are shown in FIG. As a parameter for evaluating the corrosion resistance, the amount of change in coercive force caused by selective oxidation of rare earth is shown with an initial value of 1. The larger the change in coercive force, the more severe the corrosion is. It can be seen that the zirconium film improves the corrosion resistance.
実施例2 実施例1と同様にしてSiOの膜厚のみを変化させたディ
スクを作製し、そのときの記録に必要なレーザパワーに
ついて、実施例1と同様にして求めた結果を第2図にに
示す。膜厚1000Å以上で顕著な断熱効果を示し、低
いレーザパワーで記録することができる。Example 2 A disk was produced in the same manner as in Example 1 except that only the SiO film thickness was changed, and the laser power required for recording was determined in the same manner as in Example 1 and the results are shown in FIG. Shown in. When the film thickness is 1000 Å or more, a remarkable heat insulating effect is exhibited, and recording can be performed with low laser power.
実施例3 実施例1と同様にしてジルコニウムの薄膜のみを変化さ
せたディスクを作製し、温度60℃,相対湿度90%の
恒温恒湿槽に入れて、1000時間後の保磁力変化を測
定した。その結果を第3図に示す。膜厚2000Å以上
で顕著な耐食効果を示すことがわかる。Example 3 A disk in which only the zirconium thin film was changed was prepared in the same manner as in Example 1, placed in a constant temperature and humidity chamber at a temperature of 60 ° C. and a relative humidity of 90%, and the change in coercive force after 1000 hours was measured. . The results are shown in FIG. It can be seen that a remarkable corrosion resistance effect is exhibited at a film thickness of 2000 Å or more.
実施例4 記録用磁性膜であるTbFeをGdTbFeに変えたことを除いて
実施例1と同様のディスクを作製し、実施例1と同様の
耐食試験を行った結果、第1図に示したと同様の結果が
得られた。Example 4 A disk similar to that of Example 1 was prepared except that the recording magnetic film TbFe was changed to GdTbFe, and the same corrosion resistance test as in Example 1 was performed. As a result, the same as shown in FIG. The result was obtained.
なお、本実施例では、誘電体膜としてSiOを用いたが、
誘電体膜としてSi3N4,AlN,BN,GaN等の窒素化合物を
用いても本発明は有効である。In this example, SiO was used as the dielectric film,
The present invention is also effective when a nitrogen compound such as Si 3 N 4 , AlN, BN, or GaN is used as the dielectric film.
なお、本実施例では、貼合わせディスクを用いたが、単
板構造ディスクにおいても本発明は有効である。In this embodiment, the laminated disc is used, but the present invention is also effective for a single plate structure disc.
発明の効果 本発明は、光磁気記録膜上にジルコニウム膜を設けるこ
とにより従来に比べ著しく耐食性を向上することがで
き、さらに記録膜としてジルコニウム膜との境界面に熱
伝導率の小さい誘電体膜を形成させることにより、記録
感度の低下という問題を回避させるという効果を得るこ
とができる優れた光磁気記録担体を実現できるものであ
る。EFFECTS OF THE INVENTION According to the present invention, by providing a zirconium film on the magneto-optical recording film, the corrosion resistance can be remarkably improved as compared with the conventional one, and a dielectric film having a small thermal conductivity is formed at the interface with the zirconium film as a recording film. By forming the above, it is possible to realize an excellent magneto-optical record carrier that can obtain the effect of avoiding the problem of the decrease in recording sensitivity.
第1図は本発明による光磁気記録担体の保護層を有しな
いもの、SiO膜の保護層のみのもの及びジルコニウム膜
の保護層のみのものの特性図、第2図は本発明による光
磁気記録担体の記録感度を示す誘電体膜の膜厚依存特性
図、第3図は本発明による光磁気記録担体のジルコニウ
ム膜の膜厚移存特性図である。FIG. 1 is a characteristic diagram of a magneto-optical record carrier according to the present invention which does not have a protective layer, only a protective layer of SiO film and only a protective layer of zirconium film, and FIG. 2 is a magneto-optical record carrier according to the present invention. FIG. 3 is a film thickness-dependent characteristic diagram of the dielectric film showing the recording sensitivity, and FIG. 3 is a film thickness variation characteristic diagram of the zirconium film of the magneto-optical record carrier according to the present invention.
Claims (1)
明誘電体層を介して積層された希土類遷移金属磁性薄膜
に、さらに誘電体層を介してジルコニウム薄膜の保護層
を積層したことを特徴とする光磁気記録担体。1. A rare earth transition metal magnetic thin film laminated directly or via a transparent dielectric layer on an optically transparent substrate, and a zirconium thin film protective layer further laminated via a dielectric layer. A characteristic magneto-optical record carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2221785A JPH0619860B2 (en) | 1985-02-07 | 1985-02-07 | Magneto-optical record carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2221785A JPH0619860B2 (en) | 1985-02-07 | 1985-02-07 | Magneto-optical record carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61182649A JPS61182649A (en) | 1986-08-15 |
| JPH0619860B2 true JPH0619860B2 (en) | 1994-03-16 |
Family
ID=12076633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2221785A Expired - Lifetime JPH0619860B2 (en) | 1985-02-07 | 1985-02-07 | Magneto-optical record carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0619860B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2660569B2 (en) * | 1989-02-10 | 1997-10-08 | 三菱電機株式会社 | Magneto-optical recording medium |
-
1985
- 1985-02-07 JP JP2221785A patent/JPH0619860B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61182649A (en) | 1986-08-15 |
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