JPH0620036B2 - Exposure method and apparatus - Google Patents
Exposure method and apparatusInfo
- Publication number
- JPH0620036B2 JPH0620036B2 JP60084586A JP8458685A JPH0620036B2 JP H0620036 B2 JPH0620036 B2 JP H0620036B2 JP 60084586 A JP60084586 A JP 60084586A JP 8458685 A JP8458685 A JP 8458685A JP H0620036 B2 JPH0620036 B2 JP H0620036B2
- Authority
- JP
- Japan
- Prior art keywords
- light source
- lamp
- secondary light
- mask surface
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Light Sources And Details Of Projection-Printing Devices (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】 ［発明の属する分野］ 本発明は露光方法および露光装置に関し、特に照明用光
源の位置調整等の為に使用される監視機能を用いた露光
方法およびそのような監視機構を備えた露光装置に関す
る ［従来の技術］ 従来、半導体露光装置のランプの位置合せは、第４図に
示すように、ランプの陰極または陽極の像をピンホール
板13とアークモニタ板14を用いて目視しながら所定の位
置に合せる方法をとっていた。すなわち、同図におい
て、ランプ９からの光束の一部はハーフミラー（または
コールドミラー）11を透過して取り出され、ミラー12で
反射された後、ピンホール板13のピンホールを通過し、
アークモニター板14上に像を作る。そこで、作業者は、
ランプの陰極または陽極の像がこのアークモニター板14
上の所定の位置に来る様にランプ位置を調整していた。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method and an exposure apparatus, and more particularly to an exposure method and a monitoring mechanism using a monitoring function used for adjusting the position of a light source for illumination. [Prior Art] Concerning the Positioning of the Lamp of the Semiconductor Exposure Apparatus, Conventionally, as shown in FIG. 4, the image of the cathode or the anode of the lamp is determined by using the pinhole plate 13 and the arc monitor plate 14. The method of adjusting to a predetermined position while taking a visual check was adopted. That is, in the figure, a part of the light flux from the lamp 9 passes through the half mirror (or cold mirror) 11, is extracted, is reflected by the mirror 12, and then passes through the pinhole of the pinhole plate 13.
Make an image on the arc monitor plate 14. Therefore, the worker
An image of the cathode or anode of the lamp is displayed on this arc monitor plate 14
The lamp position was adjusted so that it would come to the predetermined position above.
ところが、この方法ではオプティカル・インテグレータ
１が形成する２次光源の強度分布を直接モニターしてい
ないので、ランプ９がアークモニター板14上で正規の位
置にあったとしても２次光源の強度分布が対称となら
ず、マスク４を介してパターン像をウエハ上に投影する
際の像質が劣化する場合が起こり得るという欠点があっ
た。これは楕円ミラー10の焦点位置からオプティカル・
インテグレータ１の中心までの光軸と、ミラー12、ピン
ホール板13およびアークモニター板14の軸とがずれてい
る場合に起こり得る。However, in this method, since the intensity distribution of the secondary light source formed by the optical integrator 1 is not directly monitored, the intensity distribution of the secondary light source is maintained even if the lamp 9 is at the regular position on the arc monitor plate 14. There is a drawback in that the image quality may not be symmetrical and the image quality may deteriorate when the pattern image is projected on the wafer through the mask 4. This is the optical position from the focus position of the elliptical mirror 10.
This may occur when the optical axis to the center of the integrator 1 and the axes of the mirror 12, pinhole plate 13 and arc monitor plate 14 are deviated.
また、アークモニター板14上での像は鮮明でないので、
これを目視で正確な位置に合せることはきわめて困難で
あった。Also, since the image on the arc monitor plate 14 is not clear,
It was extremely difficult to visually align this with the correct position.
また、ランプが正規の位置にないとマスク４面での照度
のむらが大きくなるので、従来は、先ずアークモニター
板14上で大凡の位置合せを行なった後、マスク４面の照
度分布を測定しながらランプ位置の微調整を行なってい
た。このため、ランプの位置合せはかなり面倒であっ
た。Further, if the lamp is not in the proper position, the unevenness of the illuminance on the mask 4 surface becomes large. Therefore, conventionally, after roughly aligning the position on the arc monitor plate 14, the illuminance distribution on the mask 4 surface is measured. However, the lamp position was finely adjusted. For this reason, the alignment of the lamp was quite troublesome.
［発明の目的］ 本発明は、オプティカル・インテグレータ等が形成する
２次光源の強度分布を正確に監視できる露光方法および
装置を提供することを目的とする。[Object of the Invention] It is an object of the present invention to provide an exposure method and apparatus capable of accurately monitoring the intensity distribution of a secondary light source formed by an optical integrator or the like.
［実施例］ 以下、図面を用いて本発明の実施例を説明する。Embodiments Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明を用いた光源位置監視装置の構成例を
示す。同図において、１は２次光源を形成せしめるオプ
ティカル・インテグレータ、２は透過率１〜２％のハー
フミラーである。ハーフミラー２で反射された光はコン
デンサレンズ３でマスク４面に集光される。また、ハー
フミラー２を透過した光束８ａ，８ｂはコンデンサレン
ズ５で集光されてマスク４の面の中心と共役な点にピン
ホールを持つピンホール板６を通過し、受光素子７に入
射する。ランプ位置を合せる場合には、受光素子７の出
力をモニターしながら光軸に対して対称となる光束８
ａ，８ｂが同じ強度となる様にランプ位置を調整すれば
よい。FIG. 1 shows a configuration example of a light source position monitoring device using the present invention. In the figure, 1 is an optical integrator for forming a secondary light source, and 2 is a half mirror having a transmittance of 1 to 2%. The light reflected by the half mirror 2 is condensed on the mask 4 surface by the condenser lens 3. The light beams 8 a and 8 b that have passed through the half mirror 2 are condensed by the condenser lens 5, pass through the pinhole plate 6 having a pinhole at a point conjugate with the center of the surface of the mask 4, and enter the light receiving element 7. . When aligning the lamp positions, while monitoring the output of the light receiving element 7, the luminous flux 8 which is symmetrical with respect to the optical axis
The lamp position may be adjusted so that a and 8b have the same intensity.
第２図に受光素子7 の使用例を示す。ここでは受光素子
として４分割のフォトディテクタを用いる例を示す。２
次光源の強度分布が対称となるには４分割されたフォト
ディテクタの分割面ＡとＣ、ＢとＤに入射する光の強度
が等しくなればよい。すなわちランプ位置の合せ方は、
具体的には、フォトディテクタ出力のＡ−ＣとＢ−Ｄと
Ａ＋Ｂ＋Ｃ＋Ｄをモニターして、光軸に垂直な平面内で
の直交する軸方向の位置をＡ−ＣとＢ−Ｄが０となる様
に調整し、光軸方向はＡ＋Ｂ＋Ｃ＋Ｄが最大になるよう
に調整する。FIG. 2 shows an example of using the light receiving element 7. Here, an example in which a four-divided photodetector is used as a light receiving element is shown. Two
In order for the intensity distribution of the next light source to be symmetrical, it is sufficient that the intensities of the lights incident on the division planes A and C, and B and D of the four-divided photodetector become equal. In other words, how to match the lamp position is
Specifically, by monitoring A-C, B-D, and A + B + C + D of the photodetector output, A-C and B-D are set to 0 at the positions of the orthogonal axial directions in the plane perpendicular to the optical axis. The optical axis direction is adjusted so that A + B + C + D is maximized.
なお、この他に受光素子を中心部分とその周辺４部分と
に分割し、中心部分と周辺部分の出力の比がある値にな
る様に光軸方向を調整するようにしてもよい。受光素子
についてはこの他にＣＣＤエリアセンサーを用いるよう
にしてもよい。Alternatively, the light receiving element may be divided into a central portion and four peripheral portions, and the optical axis direction may be adjusted so that the ratio of the outputs of the central portion and the peripheral portion becomes a certain value. In addition to this, a CCD area sensor may be used for the light receiving element.
第３図は、本発明を半導体露光装置に実施した例を示
す。９は光源であるところの水銀ランプで、ランプ９の
アーク中心は楕円ミラー10の第１焦点に位置する。ま
た、楕円ミラー10の第２焦点にはオプティカル・インテ
グレータ１を配置する。11はミラーである。１のオプテ
ィカル・インテグレータ以下は先に述べたとおりであ
る。FIG. 3 shows an example in which the present invention is applied to a semiconductor exposure apparatus. A mercury lamp 9 is a light source, and the arc center of the lamp 9 is located at the first focal point of the elliptical mirror 10. Further, the optical integrator 1 is arranged at the second focal point of the elliptical mirror 10. 11 is a mirror. The optical integrator of No. 1 and below are as described above.
［発明の効果］ 以上説明したように、本発明によると、２次光源からの
直接光を受光素子で受け、この受光素子の出力により２
次光源の強度分布を監視するようにしているため、例え
ば光源としてのランプを被照射面例えばマスク面の照度
分布が対称でむらのない位置に正確かつ容易に位置合せ
することができる。[Effects of the Invention] As described above, according to the present invention, the direct light from the secondary light source is received by the light receiving element.
Since the intensity distribution of the next light source is monitored, for example, the lamp as the light source can be accurately and easily aligned to a position where the illuminance distribution on the surface to be illuminated, for example, the mask surface is symmetrical and uniform.
第１図は本発明を適用した実施例の概略図、第２図は受
光素子の平面図、第３図は本発明を適用した半導体露光
装置の実施例、第４図は従来のランプ位置監視装置の実
施例である。 １：オプティカル・インテグレータ、２：ハーフミラ
ー、３，５：コンデンサレンズ、４：マスク、６：ピン
ホール板、７：受光素子、８ａ，８ｂ：透過光、９：水
銀ランプ、10：楕円ミラー、11：ミラー。FIG. 1 is a schematic view of an embodiment to which the present invention is applied, FIG. 2 is a plan view of a light receiving element, FIG. 3 is an embodiment of a semiconductor exposure apparatus to which the present invention is applied, and FIG. 4 is a conventional lamp position monitoring. It is an example of an apparatus. 1: optical integrator, 2: half mirror, 3, 5: condenser lens, 4: mask, 6: pinhole plate, 7: light receiving element, 8a, 8b: transmitted light, 9: mercury lamp, 10: elliptical mirror, 11: Mirror.
Claims (2)
光源からの光でマスク面を照明する露光方法において、
前記マスク面及び前記マスク面と共役な平面とは異なる
位置で前記２次光源からの光束を受光し、前記２次光源
の強度分布を検出する段階を有することを特徴とする露
光方法。1. An exposure method of forming a secondary light source with light from a light source and illuminating a mask surface with light from the secondary light source,
An exposure method comprising: receiving a light beam from the secondary light source at a position different from the mask surface and a plane conjugate with the mask surface, and detecting an intensity distribution of the secondary light source.
光源からの光でマスク面を照明する露光装置において、
前記２次光源からの光束を受光して前記２次光源の２次
元的な強度分布を検出する手段を、前記マスク面及び前
記マスク面と共役な平面とは異なる位置に設けたことを
特徴とする露光装置。2. An exposure apparatus which forms a secondary light source with light from a light source and illuminates a mask surface with light from the secondary light source,
A means for receiving a light beam from the secondary light source and detecting a two-dimensional intensity distribution of the secondary light source is provided at a position different from the mask surface and a plane conjugate with the mask surface. Exposure equipment.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084586A JPH0620036B2 (en) | 1985-04-22 | 1985-04-22 | Exposure method and apparatus |
| US07/684,496 US5153419A (en) | 1985-04-22 | 1991-04-15 | Device for detecting position of a light source with source position adjusting means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084586A JPH0620036B2 (en) | 1985-04-22 | 1985-04-22 | Exposure method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61244028A JPS61244028A (en) | 1986-10-30 |
| JPH0620036B2 true JPH0620036B2 (en) | 1994-03-16 |
Family
ID=13834775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60084586A Expired - Lifetime JPH0620036B2 (en) | 1985-04-22 | 1985-04-22 | Exposure method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620036B2 (en) |
-
1985
- 1985-04-22 JP JP60084586A patent/JPH0620036B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61244028A (en) | 1986-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |