JPH0620057B2 - Liquid phase epitaxial growth system - Google Patents
Liquid phase epitaxial growth systemInfo
- Publication number
- JPH0620057B2 JPH0620057B2 JP17457381A JP17457381A JPH0620057B2 JP H0620057 B2 JPH0620057 B2 JP H0620057B2 JP 17457381 A JP17457381 A JP 17457381A JP 17457381 A JP17457381 A JP 17457381A JP H0620057 B2 JPH0620057 B2 JP H0620057B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- growth
- gate
- preliminary
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】 本発明は液相エピタキシャル成長装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid phase epitaxial growth apparatus.
半導体装置、特に発光素子、半導体レーザー等の製造に
おけるエピタキシャル層の形成において、液相エピタキ
シャル成長装置が使用されている。すなわち、従来のエ
ピタキシャル成長装置では、たとえば、化合物半導体か
らなる発光素子基板を成長ソースの入った支持体（ボー
ト）に固定し、常温で水素置換されている成長室にボー
トを挿入する。次に、１時間ほどこの状態でボートを水
素置換させた後、成長室をベーク温度に上昇させ定時間
放置後、プレヒート温度に上昇させて定時間放置する。
その後、０．１〜０．５℃／分で降温させながら反応液
を入れたボートを移動させながら基板上に不純物を成長
させる。成長終了でボートを取り出すための成長室温度
を常温まで降温させる。このサイクル運転中、成長室に
は水素が流されている。A liquid phase epitaxial growth apparatus is used for forming an epitaxial layer in the production of semiconductor devices, particularly light emitting devices, semiconductor lasers and the like. That is, in a conventional epitaxial growth apparatus, for example, a light emitting element substrate made of a compound semiconductor is fixed to a support (boat) containing a growth source, and the boat is inserted into a growth chamber where hydrogen is replaced at room temperature. Next, after the boat is replaced with hydrogen in this state for about 1 hour, the growth chamber is heated to the bake temperature and left for a fixed time, and then raised to the preheat temperature and left for a fixed time.
After that, while lowering the temperature at 0.1 to 0.5 ° C./minute, the boat containing the reaction solution is moved to grow impurities on the substrate. At the end of growth, the growth chamber temperature for taking out the boat is lowered to room temperature. During this cycle operation, hydrogen is flown into the growth chamber.
この方法における問題点は、成長に必要な正味の処理工
程部分は、ベーク工程、プリヒート工程および成長工程
であり、他の常温からベーク温度への昇温工程とボート
を取り出すための常温への降温工程は、成長には不用で
あるが成長室が水素雰囲気のため（３００℃以上の高温
でボートを取り出そうとすれば爆発する。）従来方式で
は、省略できなかった。そのため、１サイクルに８時間
もかかってしまう。The problem with this method is that the net process steps required for growth are the baking step, the preheating step, and the growth step, and the other temperature rising steps from normal temperature to the bake temperature and cooling to room temperature for taking out the boat. The process is not necessary for growth, but the growth chamber has a hydrogen atmosphere (explosion occurs if the boat is taken out at a high temperature of 300 ° C. or higher). It cannot be omitted in the conventional method. Therefore, one cycle takes 8 hours.
したがって、本発明の目的は、生産性の高い液相エピタ
キシャル成長装置を提供することにある。Therefore, an object of the present invention is to provide a liquid phase epitaxial growth apparatus with high productivity.
また、本発明の他の目的は成長室内に半導体にとって好
ましくない異物、すなわちパーティクル(Particle)を巻
き込むことのないようにした液相エピタキシャル成長装
置を提供することにある。Another object of the present invention is to provide a liquid phase epitaxial growth apparatus in which foreign matter which is not preferable for semiconductors, that is, particles, is prevented from being trapped in the growth chamber.
かかる目的を達成するための本発明の基本的構成は、半
導体基板を成長ソースを有する支持体にセットし、その
支持体を成長室内に収容して前記半導体基板にエピタキ
シャル成長を行う液相エピタキシャル成長装置であっ
て、前記支持体の出入口を有し、前記半導体基板を所望
の予備温度雰囲気状態に保持する予備室と、当該予備室
に連接したところに前記支持体の出入口が形成され、前
記支持体にセットされた半導体基板に対し液相エピタキ
シャル成長を行う成長室と、前記予備室と前記成長室と
を区画するゲートと、前記支持体を前記予備室から前記
成長室に移動させる手段とを有し、前記成長室に所望の
ガスを供給するガス供給管を前記ゲートに対して反対側
に位置させて前記成長室に接続する一方、前記成長室内
のガスを排出する排気管を前記ゲートに近接させて前記
成長室に接続し、前記予備室にパージガスを供給するパ
ージガス供給管を前記ゲートに近接させて前記予備室下
方に接続する一方、前記予備室内のパージガスを排出す
るパージガス排出管を前記予備室の前記出入口の近傍に
接続し、前記予備室内に前記ゲート側から前記予備室の
出入口側に向かうパージガスの流れを形成し、前記成長
室内に前記ゲートに対して反対側から前記ゲートに向か
うガスの流れを形成するようにしたものである。The basic configuration of the present invention for achieving such an object is a liquid phase epitaxial growth apparatus in which a semiconductor substrate is set on a support having a growth source, the support is housed in a growth chamber and epitaxial growth is performed on the semiconductor substrate. There is an inlet / outlet of the support, a preliminary chamber for holding the semiconductor substrate in a desired preliminary temperature atmosphere state, and an inlet / outlet of the support is formed at a place connected to the preliminary chamber, A growth chamber for performing liquid phase epitaxial growth on the set semiconductor substrate, a gate partitioning the preliminary chamber and the growth chamber, and means for moving the support from the preliminary chamber to the growth chamber, A gas supply pipe for supplying a desired gas to the growth chamber is located on the opposite side of the gate and connected to the growth chamber, while an exhaust gas for discharging the gas in the growth chamber A pipe is connected to the growth chamber close to the gate, and a purge gas supply pipe for supplying purge gas to the preliminary chamber is connected close to the gate below the preliminary chamber, while the purge gas in the preliminary chamber is discharged. A purge gas discharge pipe is connected in the vicinity of the inlet / outlet port of the spare chamber to form a flow of purge gas from the gate side toward the inlet / outlet side of the spare chamber in the spare chamber, and the opposite side to the gate in the growth chamber. To form a gas flow from the gate to the gate.
以下、本発明の実施例を図面に基づいて詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例による液相エピタキシャル成
長装置を示す概略図であり、第２図は同じく処理時の温
度経緯を示すグラフである。FIG. 1 is a schematic diagram showing a liquid phase epitaxial growth apparatus according to an embodiment of the present invention, and FIG. 2 is a graph showing temperature history during the same processing.
第１図において、１は被処理物である半導体基板を収容
してエピタキシャル成長を行う石英管によって形成され
る成長室である。成長室１の外側には、温度制御用のヒ
ータ２が配設されている。成長室１の一端は出入口を形
作り、この出入口からはボート５が成長室１内に進退移
動する。また、ボート５およびボート５上に取り付けら
れる基板およびソースを入れた溶液溜は、第１スライド
８および第２スライド７等のスライド群で制御される。In FIG. 1, reference numeral 1 is a growth chamber formed by a quartz tube that accommodates a semiconductor substrate as an object to be processed and performs epitaxial growth. A heater 2 for temperature control is arranged outside the growth chamber 1. One end of the growth chamber 1 forms an entrance / exit through which the boat 5 moves back and forth into the growth chamber 1. Further, the boat 5 and the solution reservoir containing the substrate and the source mounted on the boat 5 are controlled by a slide group such as the first slide 8 and the second slide 7.
また、成長室１の出入口はキャップ６で気密的に取り付
けられる。また、成長室１の出入口側にはゲート３を隔
てて予備室４が配設されている。この予備室４はゲート
３を閉じた後、キャップ６を取り外した際には、水素爆
発が生じない３００℃前後以下の温度となるように制御
され、この状態下でボート５は予備室４と大気中との間
のロード、アンロードがなされる。Further, the inlet and outlet of the growth chamber 1 are attached airtightly with a cap 6. Further, a preliminary chamber 4 is arranged on the inlet / outlet side of the growth chamber 1 with a gate 3 therebetween. When the cap 6 is removed after the gate 3 is closed, the preliminary chamber 4 is controlled so as to have a temperature of about 300 ° C. or lower at which hydrogen explosion does not occur. Loading and unloading with the atmosphere is performed.
さらに、成長室１および予備室４にはそれぞれガス供給
管９，１０および排気管１１，１２が配設され、成長室
１および予備室４を所定のガス雰囲気とするようになっ
ている。Further, gas supply pipes 9 and 10 and exhaust pipes 11 and 12 are provided in the growth chamber 1 and the preliminary chamber 4, respectively, so that the growth chamber 1 and the preliminary chamber 4 are set to have a predetermined gas atmosphere.
このような装置においては、エピタキシャル成長する際
には、先ず、ソースと半導体基板をセットしたボート５
を水素あるいはチッ素でパージされている予備室４に入
れ、第２図に示すｔ１時間だけ水素置換する。In such an apparatus, when epitaxially growing, first, the boat 5 in which the source and the semiconductor substrate are set is used.
Is placed in the preliminary chamber 4 purged with hydrogen or nitrogen, and is replaced with hydrogen for t 1 hour shown in FIG.
次に、ゲートを開き、温度Ｔ１に管理され、かつ水素雰
囲気となっている成長室１に第１スライド８によってボ
ート５を移動させる。そして、ゲート３を開いた状態で
成長室１の温度を第２図に示すように、Ｔ１のベークか
らＴ２のプリヒートに移行させ、ｔ２時間までの間に半
導体基板上に所望のエピタキシャル層を成長させる。Next, the gate is opened, and the boat 5 is moved by the first slide 8 to the growth chamber 1 controlled to the temperature T 1 and in the hydrogen atmosphere. Then, as shown in FIG. 2, with the gate 3 opened, the temperature of the growth chamber 1 is changed from the baking of T 1 to the preheating of T 2 , and the desired epitaxial film is formed on the semiconductor substrate by t 2 hours. Grow layers.
エピタキシャル層の形成が終了すると、ボート５を予備
室４に移し、ゲート３を閉じる。この際、予備室４と成
長室１の降温化（ガス、冷却水等による強制冷却）を図
る。成長室１はベーク温度まで降下させ、予備室４は３
００℃前後以下に降下させる。予備室４が３００℃前後
以下に達すると、キャップ６を外して処理した基板およ
び溶液溜等を取り出し（アンロード）、新たな基板およ
び溶液溜を入れ（ロード）、次の作業を開始する。When the formation of the epitaxial layer is completed, the boat 5 is moved to the preliminary chamber 4 and the gate 3 is closed. At this time, the temperature of the preliminary chamber 4 and the growth chamber 1 is lowered (forced cooling with gas, cooling water, etc.). The growth chamber 1 is lowered to the bake temperature, and the preliminary chamber 4 is set to 3
Lower the temperature to around 00 ° C or lower. When the temperature in the preliminary chamber 4 reaches around 300 ° C. or lower, the cap 6 is removed, the processed substrate and solution reservoir are taken out (unloaded), a new substrate and solution reservoir are introduced (loaded), and the next work is started.
このような実施例によれば、予備室を設け、この予備室
では従来の成長室と同様の温度差の激しい降温、昇温を
行うが、エピタキシャル成長を行う成長室は高い温度
（Ｔ１以上）に維持管理される。この結果、昇温、降温
時間が短縮できるため、１サイクルの作業時間が従来の
８時間から４時間と半分に短縮でき、生産性を２倍に高
めることができる。According to such an embodiment, a preliminary chamber is provided, and in this preliminary chamber, the temperature drop and the temperature increase with the same temperature difference as in the conventional growth chamber are performed, but the growth chamber for epitaxial growth has a high temperature (T 1 or higher). Will be maintained. As a result, the time for raising and lowering the temperature can be shortened, so that the work time for one cycle can be shortened from the conventional 8 hours to 4 hours, and the productivity can be doubled.
また、第１図を見て明らかなように、本発明によれば、
半導体基板の表面にエピタキシャル成長させるための加
熱処理室（成長室１）は、半導体基板の出入口側とは反
対方向において所望のガスを供給するためのガス供給管
９が配設され、一方、特にその成長室１の半導体基板の
出入口（ゲート３）近傍に成長室１内を排気するための
排気手段である排気管１１が配設されているために、ゲ
ート３を開放にして半導体基板を予備室４から成長室１
内に移動させる際に、その成長室１内に半導体にとって
好ましくない異物、すなわちパーティクル(Particle)を
巻き込むことがなくなるという効果をもたらす。Further, as apparent from FIG. 1, according to the present invention,
The heat treatment chamber (growth chamber 1) for epitaxially growing the surface of the semiconductor substrate is provided with a gas supply pipe 9 for supplying a desired gas in a direction opposite to the inlet / outlet side of the semiconductor substrate, and Since the exhaust pipe 11 which is an exhaust means for exhausting the inside of the growth chamber 1 is arranged in the vicinity of the inlet / outlet (gate 3) of the semiconductor substrate of the growth chamber 1, the gate 3 is opened and the semiconductor substrate is kept in the preliminary chamber. Growth room 1 from 4
This brings about an effect that foreign matter which is not preferable for the semiconductor, that is, particles, is not caught in the growth chamber 1 when it is moved inward.
同様に、予備室４においてもパージガス供給管１０はゲ
ート３に近接して設けられ、そしてパージガスは半導体
基板の出入口のキャップ６に近接して設けられたパージ
ガス排出管１２を通して排出させているため、パーティ
クルは勿論、大気の巻き込みも防止できる。Similarly, in the spare chamber 4, the purge gas supply pipe 10 is provided close to the gate 3, and the purge gas is discharged through the purge gas discharge pipe 12 provided close to the cap 6 at the entrance and exit of the semiconductor substrate. Not only particles, but also the inclusion of the atmosphere can be prevented.
なお、本発明は前記実施例に限定されるものではなく、
本発明の技術思想に基づいて変形が可能である。The present invention is not limited to the above embodiment,
Modifications are possible based on the technical idea of the present invention.
以上のように、本発明によれば処理時間が短い生産性の
高い液相エピタキシャル成長装置を提供することができ
る。As described above, according to the present invention, it is possible to provide a liquid phase epitaxial growth apparatus having a short processing time and high productivity.
第１図は本発明の一実施例である液相エピタキシャル成
長装置の概略図、第２図は同じく温度経緯を示すグラフ
である。 符号の説明 １……成長室、２……ヒータ、３……ゲート、４……予
備室、５……ボート、６……キャップ、７……第２スラ
イド、８……第１スライド。FIG. 1 is a schematic view of a liquid phase epitaxial growth apparatus which is an embodiment of the present invention, and FIG. 2 is a graph showing temperature history. DESCRIPTION OF SYMBOLS 1 ... Growth chamber, 2 ... Heater, 3 ... Gate, 4 ... Reserve chamber, 5 ... Boat, 6 ... Cap, 7 ... Second slide, 8 ... First slide.
Claims (1)
セットし、その支持体を成長室内に収容して前記半導体
基板にエピタキシャル成長を行う液相エピタキシャル成
長装置であって、 前記支持体の出入口を有し、前記半導体基板を所望の予
備温度雰囲気状態に保持する予備室と、 当該予備室に連接したところに前記支持体の出入口が形
成され、前記支持体にセットされた半導体基板に対し液
相エピタキシャル成長を行う成長室と、 前記予備室と前記成長室とを区画するゲートと、 前記支持体を前記予備室から前記成長室に移動させる手
段とを有し、 前記成長室に所望のガスを供給するガス供給管を前記ゲ
ートに対して反対側に位置させて前記成長室に接続する
一方、前記成長室内のガスを排出する排気管を前記ゲー
トに近接させて前記成長室に接続し、 前記予備室にパージガスを供給するパージガス供給管を
前記ゲートに近接させて前記予備室下方に接続する一
方、前記予備室内のパージガスを排出するパージガス排
出管を前記予備室の前記出入口の近傍に接続し、 前記予備室内に前記ゲート側から前記予備室の出入口側
に向かうパージガスの流れを形成し、前記成長室内に前
記ゲートに対して反対側から前記ゲートに向かうガスの
流れを形成するようにしたことを特徴とする液相エピタ
キシャル成長装置。1. A liquid-phase epitaxial growth apparatus in which a semiconductor substrate is set on a support having a growth source, and the support is housed in a growth chamber to perform epitaxial growth on the semiconductor substrate. Then, a preliminary chamber for holding the semiconductor substrate in a desired preliminary temperature atmosphere state, and an inlet / outlet port for the support are formed in a place connected to the preliminary chamber, and liquid phase epitaxial growth is performed on the semiconductor substrate set on the support. And a gate for partitioning the preliminary chamber and the growth chamber, and a means for moving the support from the preliminary chamber to the growth chamber, and supplying a desired gas to the growth chamber. The gas supply pipe is located on the opposite side of the gate and connected to the growth chamber, while the exhaust pipe for discharging the gas in the growth chamber is brought close to the gate and A purge gas supply pipe connected to the long chamber and supplying a purge gas to the spare chamber is connected to the lower part of the spare chamber in close proximity to the gate, and a purge gas discharge pipe for discharging the purge gas in the spare chamber is connected to the spare chamber. Connected in the vicinity of the inlet / outlet, forming a flow of purge gas from the gate side toward the inlet / outlet side of the auxiliary chamber in the preliminary chamber, and forming a gas flow from the opposite side to the gate toward the gate in the growth chamber. A liquid phase epitaxial growth apparatus characterized by being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17457381A JPH0620057B2 (en) | 1981-11-02 | 1981-11-02 | Liquid phase epitaxial growth system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17457381A JPH0620057B2 (en) | 1981-11-02 | 1981-11-02 | Liquid phase epitaxial growth system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5877226A JPS5877226A (en) | 1983-05-10 |
| JPH0620057B2 true JPH0620057B2 (en) | 1994-03-16 |
Family
ID=15980916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17457381A Expired - Lifetime JPH0620057B2 (en) | 1981-11-02 | 1981-11-02 | Liquid phase epitaxial growth system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620057B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60127457A (en) * | 1983-12-14 | 1985-07-08 | Fujitsu Ltd | Ultrasonic medium characteristic value measuring apparatus |
| US4648276A (en) * | 1984-01-27 | 1987-03-10 | Klepper John R | Apparatus for measuring the characteristics of an ultrasonic wave medium |
| US4755364A (en) * | 1986-05-29 | 1988-07-05 | Rockwell International Corporation | Liquid phase epitaxy apparatus and method |
| JPS6332917A (en) * | 1986-07-28 | 1988-02-12 | Hitachi Ltd | Liquid phase epitaxial growth method and growth apparatus |
-
1981
- 1981-11-02 JP JP17457381A patent/JPH0620057B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5877226A (en) | 1983-05-10 |
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