JPH0620645B2 - Diamond coated cemented carbide and method for producing the same - Google Patents
Diamond coated cemented carbide and method for producing the sameInfo
- Publication number
- JPH0620645B2 JPH0620645B2 JP19618085A JP19618085A JPH0620645B2 JP H0620645 B2 JPH0620645 B2 JP H0620645B2 JP 19618085 A JP19618085 A JP 19618085A JP 19618085 A JP19618085 A JP 19618085A JP H0620645 B2 JPH0620645 B2 JP H0620645B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- cemented carbide
- thin film
- base material
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 title claims description 75
- 239000010432 diamond Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000002245 particle Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 29
- 239000006061 abrasive grain Substances 0.000 claims description 8
- 238000001308 synthesis method Methods 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 description 17
- 238000010899 nucleation Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000006748 scratching Methods 0.000 description 5
- 230000002393 scratching effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- -1 Al and Cu Chemical class 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910001234 light alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、ダイヤモンド薄膜を超硬合金基材に被覆し
てなるダイヤモンド被覆超硬合金に関し、特に、Ａｌ−
Ｓｉ合金のような軽合金の高速切削に適したダイヤモン
ド被覆超硬合金に関する。TECHNICAL FIELD The present invention relates to a diamond-coated cemented carbide obtained by coating a diamond thin film on a cemented carbide substrate, and particularly to Al--
The present invention relates to a diamond-coated cemented carbide suitable for high speed cutting of light alloys such as Si alloys.
［従来の技術］ ダイヤモンドは、極めて硬く、またＡｌ，Ｃｕなどの軟
質金属に対し化学的に安定であり、ほとんど反応しな
い。したがって、単結晶または焼結体の形態で、Ａｌ，
Ｃｕなどの金属の高速切削材料として広く使用されてい
る。[Prior Art] Diamond is extremely hard, is chemically stable to soft metals such as Al and Cu, and hardly reacts. Therefore, in the form of a single crystal or a sintered body, Al,
It is widely used as a high-speed cutting material for metals such as Cu.
［発明が解決しようとする問題点］ ところで、Ａｌ，Ｃｕなどの軟質金属またはこれらの金
属の合金を切削する場合には、被削材と、切削材たるダ
イヤモンドとの硬度差が非常に大きく、また工具の刃先
温度はあまり高くならないので被削材との反応もほとん
ど生じない。したがって、単結晶または焼結体の形態の
ダイヤモンドを利用するまでもなく、より安価な材料、
たとえば超硬合金基材の表面にダイヤモンドを被覆して
なる材料で十分であると考えられる。[Problems to be Solved by the Invention] By the way, when a soft metal such as Al or Cu or an alloy of these metals is cut, the hardness difference between the work material and the diamond as the cutting material is very large. Further, since the cutting edge temperature of the tool does not rise so much, the reaction with the work material hardly occurs. Therefore, a cheaper material, even without the use of diamond in the form of single crystals or sintered bodies,
For example, a material obtained by coating the surface of a cemented carbide substrate with diamond is considered to be sufficient.
他方、ダイヤモンドを被覆する技術としては、近年、水
素と炭素の混合気流をプラズマ中で分解・励起・活性化
し、基板上にダイヤモンドを被覆する技術、すなわちプ
ラズマＣＶＤ法が開発されている。On the other hand, as a technique for coating diamond, in recent years, a technique for decomposing / exciting / activating a mixed gas flow of hydrogen and carbon in plasma to coat diamond on a substrate, that is, a plasma CVD method has been developed.
そこで、本願発明者達は、上記した気相合成法により、
実際に超硬合金基材の表面にダイヤモンドを被覆し、Ａ
ｌ−Ｓｉ合金の高速切削に使用した。しかしながら、被
覆されたダイヤモンド薄膜は切削初期に剥離してしま
い、ほとんどその効果が認められなかった。Therefore, the inventors of the present application, by the above-described gas phase synthesis method,
Actually, the surface of the cemented carbide substrate is coated with diamond, and A
Used for high speed cutting of 1-Si alloy. However, the coated diamond thin film was peeled off at the initial stage of cutting, and the effect was hardly recognized.
よって、ダイヤモンド薄膜と超硬合金基材との間の接着
強度を高めるために、種々の方法を試みた。たとえば、
超硬合金基材とダイヤモンド被覆膜との間に、Ｔｉ，Ｍ
ｏ，Ｗ，Ｓｉなどの各種金属や、ＴｉＣ，ＴｉＮ，Ｗ
Ｃ，Ａｌ２Ｏ３などの各種化合物を下地被覆し、しかる
後ダイヤモンド薄膜を被覆する方法を試みた。しかしな
がら、いずれの方法においても、ダイヤモンド薄膜は容
易に剥離し、ほとんどその効果が認められなかった。Therefore, various methods have been tried in order to enhance the adhesive strength between the diamond thin film and the cemented carbide substrate. For example,
Ti, M between the cemented carbide substrate and the diamond coating
Various metals such as o, W, Si, TiC, TiN, W
An attempt was made to undercoat various compounds such as C and Al 2 O 3 and then to coat a diamond thin film. However, in any of the methods, the diamond thin film was easily peeled off, and the effect was hardly recognized.
それゆえに、この発明の目的は、ダイヤモンド薄膜の剥
離が起こり難く、軟質合金の高速切削用材料として十分
実用に耐え得る、ダイヤモンド被覆超硬合金を提供する
ことにある。Therefore, an object of the present invention is to provide a diamond-coated cemented carbide that is unlikely to peel off a diamond thin film and that can be sufficiently practically used as a material for high-speed cutting of soft alloys.
［問題点を解決するための手段］ この発明は、平均粒度０．５μｍ以下のＷＣ粒子および
５重量％以下のＣｏを含む超硬合金基材と、この前記超
硬合金基材の表面に、気相合成法により被覆されてなる
ダイヤモンド薄膜とを備える、ダイヤモンド被覆超硬合
金であり、 この発明の製造方法は、平均粒度０．５μｍ以下のＷＣ
粒子および５重量％以下のＣｏを含む超硬合金基材を用
い、気相合成法によりダイヤモンド薄膜を被覆するにあ
たり、予め、超硬合金基材の表面を＃３０００より細か
いダイヤモンド砥粒にてラッピング作業により鏡面と
し、しかる後ダイヤモンド薄膜を被覆することを特徴と
するものである。[Means for Solving Problems] The present invention provides a cemented carbide base material containing WC particles having an average particle size of 0.5 μm or less and Co of 5 wt% or less, and a surface of the cemented carbide base material. A diamond-coated cemented carbide, comprising a diamond thin film coated by a vapor phase synthesis method. The production method according to the present invention is a WC having an average particle size of 0.5 μm or less.
When coating a diamond thin film by vapor phase synthesis method using a cemented carbide base material containing particles and 5 wt% or less of Co, the surface of the cemented carbide base material is previously lapped with diamond abrasive grains finer than # 3000. It is characterized in that it is mirror-finished by work and then coated with a diamond thin film.
次に、本願発明者達が、上記発明に至った経緯につき説
明する。Next, the process by which the inventors of the present invention have reached the above invention will be described.
本願発明者等は、ダイヤモンド薄膜の超硬合金基材に対
する接着強度の改善を図るべく、種々の観点から鋭意検
討を行なった。その結果、第１に、被覆されたダイヤモ
ンド薄膜の組織が微細であればあるほど、基材との密着
力が優れる傾向にあることを見い出した。また、第２
に、超硬合金基材の表面が平滑であればあるほど、ダイ
ヤモンド薄膜の接着強度が高くなることを知得した。The inventors of the present application have made earnest studies from various viewpoints in order to improve the adhesive strength of a diamond thin film to a cemented carbide substrate. As a result, it was first found that the finer the structure of the coated diamond thin film, the more excellent the adhesion to the substrate. Also, the second
It was also found that the smoother the surface of the cemented carbide substrate, the higher the adhesive strength of the diamond thin film.
ところで、被覆膜の組織を微細にするには、一般に、被
覆処理温度を低温にすることが望ましい。しかしなが
ら、ダイヤモンド薄膜を、たとえばμ波プラズマＣＶＤ
法や、タングステン・フィラメントによるＣＶＤ法によ
り形成する場合には、処理温度は７００℃程度が下限と
されている。したがって、温度を下げるにも限界があ
り、単に温度を下げることにより微細な組織を有するダ
イヤモンド薄膜を得ることはできない。By the way, in order to make the structure of the coating film fine, it is generally desirable to lower the coating treatment temperature. However, a diamond thin film, for example, μ wave plasma CVD
Method or the CVD method using a tungsten filament, the lower limit of the processing temperature is about 700 ° C. Therefore, there is a limit to lowering the temperature, and it is impossible to obtain a diamond thin film having a fine structure simply by lowering the temperature.
そこで、本願発明者達は、微細な組織を有するダイヤモ
ンド薄膜を得るために、さらに、ダイヤモンド薄膜の成
膜過程につき詳細な検討を行なった。その結果、ダイヤ
モンドの析出は、初期段階では均一な膜厚を持った極薄
の薄膜とならず、ダイヤモンド粒子がまず島状に核生成
して析出し、該核が粒成長を続け、或る程度成長したと
ころで粒子同士が合体し、基材表面全面をダイヤモンド
薄膜が覆うことを見い出した。この成膜過程から、初期
の核生成密度が小さい場合、島状に発生したダイヤモン
ド粒子が成長し、ダイヤモンド薄膜を形成するに至るま
でにはかなりの厚みのダイヤモンド膜となり、粒子の粗
大化をもたらし、必然的にその組織が粗いものとなって
しまうことがわかる。また、極端に初期の核生成密度が
低い場合には、ダイヤモンド粒子が成長するだけであ
り、完全に成膜を成し遂げることは事実上不可能であっ
た。Therefore, the inventors of the present application conducted further detailed studies on the diamond thin film forming process in order to obtain a diamond thin film having a fine structure. As a result, the diamond precipitation does not form an ultrathin film having a uniform film thickness in the initial stage, and the diamond particles first nucleate and precipitate in an island shape, and the nuclei continue to grow, It was found that the particles were united with each other after being grown to a certain extent and the entire surface of the base material was covered with the diamond thin film. From this film formation process, when the initial nucleation density is low, island-shaped diamond particles grow and become a diamond film of considerable thickness until the diamond thin film is formed, resulting in coarsening of the particles. , It turns out that the organization inevitably becomes coarse. Further, when the initial nucleation density is extremely low, diamond particles only grow, and it is virtually impossible to achieve complete film formation.
以上の事実より、ダイヤモンド薄膜の組織を微細化する
には、成膜初期のダイヤモンドの核発生の段階におい
て、その核生成密度をできる限り高くしなければならな
いことがわかる。From the above facts, it is understood that in order to make the structure of the diamond thin film finer, the nucleation density of diamond should be as high as possible at the stage of nucleation of diamond at the initial stage of film formation.
ところで、ダイヤモンドの核生成密度は、たとえばプラ
ズマＣＶＤ法による場合には、ＣＨ４とＨ２の組成、流
量、流速、圧力、基材の表面温度、基材表面におけるプ
ラズマ強度、あるいは基材表面の表面性状などに大きく
左右される。この中でも、基材の表面性状、すなわち表
面の仕上り状態の影響は極めて大きい。By the way, the diamond nucleation density is, for example, in the case of the plasma CVD method, the composition of CH 4 and H 2 , the flow rate, the flow rate, the pressure, the surface temperature of the base material, the plasma intensity on the base material surface, or the base material surface. It greatly depends on the surface texture. Among these, the influence of the surface properties of the base material, that is, the finished state of the surface is extremely large.
ダイヤモンドの成膜を容易とし得る表面処理技術として
は、基材の表面をダイヤモンド砥石あるいは砥粒で研磨
し、細かな傷を基材表面に形成する、いわゆる傷入れ作
業がよく知られている。この作業により導入された鋭利
な傷の存在する位置で、ダイヤモンドの核が容易に生成
する。よって、傷入れ作業により、多数の傷を均一に形
成することにより、核生成密度を高めることができ、成
膜を容易とすることができる。As a surface treatment technique capable of facilitating diamond film formation, a so-called scratching operation is well known in which the surface of a base material is polished with a diamond grindstone or abrasive grains to form fine scratches on the surface of the base material. Diamond nuclei are easily formed at positions where sharp scratches introduced by this operation are present. Therefore, by forming many scratches uniformly by the scratching operation, the nucleation density can be increased and the film formation can be facilitated.
本願発明者達は、上記傷入れ作業に従い、ダイヤモンド
砥粒の粒度をより小さなものに変え、種々の実験を行な
った。しかしながら、＃１５００より細かいダイヤモン
ド砥粒を用いたとしても、組織の微細化には効果なく、
自ずと限界があることがわかった。The inventors of the present application changed the grain size of the diamond abrasive grains to a smaller grain size and conducted various experiments according to the above-described scratching work. However, even if finer diamond abrasive grains than # 1500 are used, there is no effect on the refinement of the structure,
It turned out that there were limits.
そこで、本願発明者達は、ダイヤモンドの核発生サイト
に関し、さらに詳細に精査したところ、ダイヤモンドの
核生成は傷入れ作業により基材表面に導入された傷のみ
ならず、ＷＣ粒子のエッジにおいても生成することを見
い出した。そして、このＷＣ粒子のエッジにおける核生
成を容易とするには、基材表面におけるＷＣ粒子間の個
々の境界、ならびにＷＣ粒子とバインダであるＣｏとの
境界を明確にしなければならないことがわかった。言い
換えれば、従来、傷入れ作業により表面に敢えて傷を導
入していたものを、逆に、表面の傷を極力除去し鏡面に
した方が好ましいことがわかった。この鏡面仕上げは、
微細なダイヤモンド砥粒を用いたラッピング作業により
行ない得る。Therefore, the inventors of the present application have made a closer examination on the nucleation site of diamond, and found that the nucleation of diamond is generated not only on the scratch introduced on the surface of the substrate by the scratching operation but also on the edge of the WC particle. I found out what to do. Then, in order to facilitate the nucleation at the edges of the WC particles, it was found that the individual boundaries between the WC particles on the surface of the base material and the boundaries between the WC particles and Co that is the binder must be clarified. . In other words, it was found that it is preferable to remove the scratches on the surface as much as possible and to make them mirror-finished, whereas the scratches on the surface were conventionally intentionally introduced. This mirror finish is
It can be performed by a lapping operation using fine diamond abrasive grains.
他方、ダイヤモンド薄膜の密着力と、超硬合金基材表面
の平滑度との関係については、前述したとおり、超硬合
金基材の表面が平滑であるほど、密着力の高いことがわ
かっていた。よって、この点からも、超硬合金基材の表
面を鏡面とすることが好ましいものである。On the other hand, regarding the relationship between the adhesion of the diamond thin film and the smoothness of the surface of the cemented carbide base material, as described above, it was known that the smoother the surface of the cemented carbide base material, the higher the adhesion strength. . Therefore, also from this point, it is preferable to make the surface of the cemented carbide base material a mirror surface.
もっとも、傷入れ作業による表面処理法によらないで核
生成密度を上げるには、核生成サイトとなるＷＣ粒子の
エッジの密度を極力高める必要がある。そこで、本願発
明者等は、ＷＣ粒子のサイズを極力小さくし、ＷＣ粒子
のエッジの数を増大させ、かつバインダであるＣｏの量
を低減させるべきであると判断した。However, in order to increase the nucleation density without using the surface treatment method by the scratching work, it is necessary to increase the density of the edges of the WC particles, which are nucleation sites, as much as possible. Therefore, the inventors of the present application determined that the size of WC particles should be made as small as possible, the number of edges of WC particles should be increased, and the amount of Co as a binder should be decreased.
上記の判断に基づき、実際に、Ｃｏの量を抑制した超微
粒超硬合金の表面を鏡面とした後、気相合成法によりダ
イヤモンド薄膜を被覆し、得られたダイヤモンド被覆超
硬合金を用いてＡｌ合金を切削した。その結果、ダイヤ
モンド薄膜はほとんど剥離せず、したがってダイヤモン
ド被覆による耐摩耗性改善効果が認められた。Based on the above judgment, actually, after the surface of the ultrafine grained cemented carbide with the amount of Co suppressed to be a mirror surface, the diamond thin film was coated by the vapor phase synthesis method, and the obtained diamond-coated cemented carbide was used. The Al alloy was cut. As a result, the diamond thin film was hardly peeled off, and therefore, the effect of improving the wear resistance by the diamond coating was recognized.
この発明は、上記した種々の実験および考察の下になさ
れたものである。The present invention has been made under the various experiments and considerations described above.
次に、この発明における種々の数値限定の根拠につき説
明する。Next, the grounds for limiting various numerical values in the present invention will be described.
（ａ） 超硬合金基材を構成するＷＣ粒子の平均粒度を
０．５μｍ以下としたのは、、０．５μｍを越えると核
生成サイトとなるＷＣ粒子のエッジの数が不足し、核生
成密度を高くすることができず、したがって微細な組織
を有するダイヤモンド薄膜を得ることができないからで
ある。(A) The average particle size of the WC particles constituting the cemented carbide base material is set to 0.5 μm or less because the number of edges of the WC particles serving as nucleation sites is insufficient when the particle size exceeds 0.5 μm and nucleation occurs. This is because the density cannot be increased and therefore a diamond thin film having a fine structure cannot be obtained.
（ｂ） 超硬合金のＣｏ含有量を５重量％以下としたの
は、５重量％を越えると、ＷＣ粒子のエッジ数が相対的
に減少し、しかもＣｏ上にはダイヤモンドの核生成が生
じず、核生成密度が減少し、したがって微細な組織を有
するダイヤモンド薄膜を得ることができないからであ
る。(B) The Co content of the cemented carbide is set to 5% by weight or less because when it exceeds 5% by weight, the number of edges of WC particles is relatively reduced and diamond nucleation occurs on Co. This is because the nucleation density is reduced, and therefore a diamond thin film having a fine structure cannot be obtained.
（ｃ） 鏡面仕上げを行なうのに用いるダイヤモンド砥
粒を＃３０００（粒度で２〜６μｍ）より細かいものを
用いるのは、これよりも粗い砥粒を用いた場合には仕上
げられた面においてＷＣ粒子同士、あるいはＷＣ粒子と
Ｃｏとの境界が明確に分離され得ないからである。すな
わち、核生成サイトとなる脱利なＷＣ粒子のエッジを確
実に得ることができないからである。(C) The diamond abrasive grains used for mirror-finishing are finer than # 3000 (grain size is 2 to 6 μm) because the WC particles on the finished surface are larger when coarser abrasive grains are used. This is because the boundaries between the WC particles and Co cannot be clearly separated from each other. That is, it is not possible to reliably obtain the edge of the detrimental WC particle that becomes the nucleation site.
［実施例］ 第１表に示す、種々のサイズのＷＣ粒子および種々のＣ
ｏ含有量を有する超硬合金（ＳＰＧ４２１）を作成し、
同じく第１表に示す表面処理を行なった後、プラズマＣ
ＶＤ法により約２μｍの厚みのダイヤモンド薄膜を超硬
合金基材表面に被覆した。この際、基材表面の温度は、
プラズマにより約７５０℃の温度に加熱されていた。Examples WC particles of various sizes and various C shown in Table 1
a cemented carbide (SPG421) having an o content is prepared,
Similarly, after performing the surface treatment shown in Table 1, plasma C
A diamond thin film having a thickness of about 2 μm was coated on the surface of the cemented carbide substrate by the VD method. At this time, the temperature of the substrate surface is
It was heated to a temperature of about 750 ° C. by the plasma.
得られたダイヤモンド被覆超硬合金を用いて第２表の条
件により切削試験を行なった。結果を、第３表に示す。
また、併せて、得られたダイヤモンド被覆膜の組織も第
３表に示す。A cutting test was conducted using the obtained diamond-coated cemented carbide under the conditions shown in Table 2. The results are shown in Table 3.
In addition, the structure of the obtained diamond coating film is also shown in Table 3.
なお、比較のために、ＩＳＯ−Ｋ１０超硬合金（第１表
〜第３表においてＡで示す）についても、同様にダイヤ
モンド被覆を施し、切削試験を行なった。For comparison, an ISO-K10 cemented carbide (denoted by A in Tables 1 to 3) was similarly diamond-coated and subjected to a cutting test.
第３表より、この発明の範囲内となる試料Ｎｏ．３のダ
イヤモンド被覆超硬合金は、他の試料に比較して、ダイ
ヤモンド薄膜の組織が微細であり、かつ切削作業中にお
いてもダイヤモンド被覆膜の剥離が生じにくく、したが
って耐摩耗性が大きく改善されていることがわかる。 From Table 3, sample No. within the scope of the present invention. The diamond-coated cemented carbide of No. 3 has a finer diamond thin film structure than other samples, and the diamond-coated film is less likely to peel off even during the cutting work, and therefore wear resistance is greatly improved. You can see that
［発明の効果］ 以上のように、この発明では、ＷＣ粒子の平均粒度が
０．５μｍ以下であり、かつＣｏ含有量が５重量％以下
の超硬合金基材を用いるため、ダイヤモンド核生成サイ
トとなるＷＣ粒子のエッジの密度が高められ、その結果
微細な組織を有するダイヤモンド薄膜が超硬合金基材表
面に被覆され得る。よって、ダイヤモンド薄膜の剥離の
生じにくいダイヤモンド被覆超硬合金を得ることができ
る。その結果、たとえばＡｌ−Ｓｉ合金のような軟質合
金、あるいはＡｌ，Ｃｕのような軟質金属の高速切削に
適した安価な工具を得ることができる。[Advantages of the Invention] As described above, in the present invention, since the cemented carbide base material in which the average particle size of the WC particles is 0.5 μm or less and the Co content is 5% by weight or less is used, the diamond nucleation site The edge density of WC particles is increased, and as a result, a diamond thin film having a fine structure can be coated on the surface of the cemented carbide substrate. Therefore, it is possible to obtain a diamond-coated cemented carbide that does not easily peel off the diamond thin film. As a result, it is possible to obtain an inexpensive tool suitable for high-speed cutting of soft alloys such as Al-Si alloys or soft metals such as Al and Cu.
Claims (2)
５重量％以下のＣｏを含む超硬合金基材と、 前記超硬合金基材の表面に、気相合成法により被覆され
たダイヤモンド薄膜とを備える、ダイヤモンド被覆超硬
合金。1. A cemented carbide base material containing WC particles having an average particle size of 0.5 μm or less and 5 wt% or less of Co, and a diamond thin film coated on the surface of the cemented carbide base material by a vapor phase synthesis method. And a diamond-coated cemented carbide.
５重量％以下のＣｏを含む超硬合金基材を用い、該基材
表面に気相合成法によりダイヤモンド薄膜を被覆するに
あたり、 予め、超硬合金基材の表面を＃３０００より細かいダイ
ヤモンド砥粒にてラッピング作業により鏡面とし、しか
る後ダイヤモンド薄膜を被覆することを特徴とする、ダ
イヤモンド被覆超硬合金の製造方法。2. A cemented carbide base material containing WC particles having an average particle size of 0.5 μm or less and 5 wt% or less of Co is used, and the surface of the base material is coated with a diamond thin film by a vapor phase synthesis method. A method for producing a diamond-coated cemented carbide, characterized in that the surface of the cemented carbide base material is made into a mirror surface by lapping work with diamond abrasive grains finer than # 3000 and then coated with a diamond thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19618085A JPH0620645B2 (en) | 1985-09-05 | 1985-09-05 | Diamond coated cemented carbide and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19618085A JPH0620645B2 (en) | 1985-09-05 | 1985-09-05 | Diamond coated cemented carbide and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6257804A JPS6257804A (en) | 1987-03-13 |
| JPH0620645B2 true JPH0620645B2 (en) | 1994-03-23 |
Family
ID=16353528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19618085A Expired - Lifetime JPH0620645B2 (en) | 1985-09-05 | 1985-09-05 | Diamond coated cemented carbide and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620645B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0667026U (en) * | 1993-03-10 | 1994-09-20 | 東レ株式会社 | Plate cylinder of rotary printing press |
-
1985
- 1985-09-05 JP JP19618085A patent/JPH0620645B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6257804A (en) | 1987-03-13 |
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