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JPH0621931B2 - Optical recording material - Google Patents
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JPH0621931B2 - Optical recording material - Google Patents

Optical recording material

Info

Publication number
JPH0621931B2
JPH0621931B2 JP61008316A JP831686A JPH0621931B2 JP H0621931 B2 JPH0621931 B2 JP H0621931B2 JP 61008316 A JP61008316 A JP 61008316A JP 831686 A JP831686 A JP 831686A JP H0621931 B2 JPH0621931 B2 JP H0621931B2
Authority
JP
Japan
Prior art keywords
optical recording
recording material
electron
substituent
property
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61008316A
Other languages
Japanese (ja)
Other versions
JPS62165646A (en
Inventor
求 吉村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61008316A priority Critical patent/JPH0621931B2/en
Priority to PCT/JP1987/000373 priority patent/WO1988009958A1/en
Priority to DE3790966A priority patent/DE3790966C2/en
Priority to DE873790966T priority patent/DE3790966T1/en
Publication of JPS62165646A publication Critical patent/JPS62165646A/en
Publication of JPH0621931B2 publication Critical patent/JPH0621931B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only

Landscapes

  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、光を用いた情報の記録に関したものであ
り、かつ、ホールバーニング反応(PHB)を用いて波長
次元で情報を多重記録する光記録材料に関する。
TECHNICAL FIELD The present invention relates to recording of information using light, and multiple recording of information in the wavelength dimension using a hole burning reaction (PHB). The present invention relates to an optical recording material.

〔従来の技術〕[Conventional technology]

第1図は例えば特開昭58-51355号公報に示された従来の
PHB反応を用いた光記録装置であり、図において、(1)は
レーザ、(2)はレーザ光、(3)は光記録材料、(4)は検出
器である。
FIG. 1 shows a conventional structure disclosed in Japanese Patent Laid-Open No. 58-51355.
An optical recording apparatus using a PHB reaction is shown. In the figure, (1) is a laser, (2) is a laser beam, (3) is an optical recording material, and (4) is a detector.

次に動作について説明する。光記録材料(3)は、第2図
に示すA1…Anの固有な光吸収帯を有しており、これに、
レーザ(1)より光記録材料(3)の固有な光吸収帯幅An以下
の波長分布を持ち波長域がA1…Anのうちにあるレーザ光
(2)を、光記録材料(3)に照射すると、光記録材料中の固
有な吸収帯のうち、照射されたレーザ光の波長域の吸収
帯が欠除せられる。この固有な光吸収帯の有無を、0,
1のバイナリーコードとして用いることにより、第3図
のような波長次元での信号が得られる。
Next, the operation will be described. The optical recording material (3) has a peculiar light absorption band of A 1 ... An shown in FIG.
Laser light from the laser (1) that has a wavelength distribution less than the specific light absorption band width An of the optical recording material (3) and has a wavelength range within A 1 ... An
When the optical recording material (3) is irradiated with (2), the absorption band in the wavelength range of the irradiated laser light is eliminated from the absorption bands peculiar to the optical recording material. The presence or absence of this unique light absorption band is 0,
By using it as a binary code of 1, a signal in the wavelength dimension as shown in FIG. 3 can be obtained.

一般に、PHB反応を用いた光記録材料中の固有な光吸収
帯としては103個程度まで分解が可能であり、その結
果、単位面積当りの光記録密度は、従来の光記録方式の
103倍、即ち、1011bit/cm2の高密度化が可能とな
る。
Generally, about 10 3 unique light absorption bands can be decomposed in an optical recording material using the PHB reaction, and as a result, the optical recording density per unit area is 10 3 of the conventional optical recording system. Double, that is, a high density of 10 11 bit / cm 2 is possible.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

PHB反応を用いた光記録装置では光記録材料の光吸収域
が、半導体レーザの発光帯域と一致することが好ましい
が、比較的長波長域の半導体レーザ波長域と一致した吸
収帯域を有する効率の良いPHB反応材料は、これまでの
ところ見い出されていない。
In the optical recording device using the PHB reaction, the light absorption region of the optical recording material preferably coincides with the emission band of the semiconductor laser, but the efficiency of having an absorption band coincident with the semiconductor laser wavelength region of a relatively long wavelength region No good PHB reactive material has been found so far.

この発明は上記のような問題点を解消するためになされ
たもので、光記録材料の光吸収波長域を長波長化して半
導体レーザ光でPHB反応を起こす光記録材料を得ること
を目的とする。
The present invention has been made to solve the above problems, and an object thereof is to obtain an optical recording material that causes a PHB reaction with a semiconductor laser light by lengthening the light absorption wavelength range of the optical recording material. .

〔問題点を解決するための手段〕[Means for solving problems]

この発明の光記録材料は固有の光吸収波長域を有し、当
該吸収波長域の光を吸収することにより、光の吸収の前
後でホールバーニング反応を起こして光吸収スペクトル
特性が変化して情報を記録する性質を有する記録体の分
子の置換基として、π電子系を有したもの、電子供与性
を有したもの、電子受容性を有したものを少なくとも1
種用い光記録体の光吸収スペクトルの波長域を長波長化
したものである。
The optical recording material of the present invention has a peculiar light absorption wavelength range, and by absorbing light in the absorption wavelength range, a hole burning reaction occurs before and after absorption of light to change the light absorption spectrum characteristics, and At least one of those having a π-electron system, those having an electron-donating property, and those having an electron-accepting property is used as a substituent of the molecule of the recording material having the property of recording
The wavelength range of the light absorption spectrum of the optical recording material using seeds is made longer.

具体的には、記録媒体として、PHB反応を効率よく起こ
すキニザリンが属するナフトキノン系色素誘導体の吸収
帯域を半導体レーザの発振域にまで長波長化し、それを
PHB反応を用いた光記録材料に用いることにより、光記
録の光源として半導体レーザを使えるようにしたもので
ある。
Specifically, as a recording medium, the absorption band of the naphthoquinone dye derivative to which quinizarin, which efficiently causes the PHB reaction, is extended to the oscillation range of the semiconductor laser, and
By using it as an optical recording material using the PHB reaction, a semiconductor laser can be used as a light source for optical recording.

〔作用〕 この発明における記録媒体の光吸収帯域の長波長化は、
記録媒体中の例えば色素のナフトキノン型の基本骨格
に、π電子系の共役性を増す構造をもつ置換基または、
電子を供与したり、あるいは受容する性質を有する置換
基を付与することにより行われる。即ち、ナフトキノン
基本骨格は、芳香族性のπ電子系よりなつており、置換
基として、ナフトキノン基本骨格中のπ電子系と共役し
うるπ電子系を有するものを選べば、キフトキノン基本
骨格中のπ電子系は、置換基のπ電子系とも共役するこ
とになり、色素の吸収スペクトルは、長波長側にシフト
する。さらに、電子を供与する性質あるいは、電子を受
容する性質を有する置換基を付与してやれば、色素分子
自身に分子内電荷移動が起こり、色素分子の吸収スペク
トルは、長波長側にシフトする。
[Operation] The wavelength of the light absorption band of the recording medium in the present invention is increased to
In the naphthoquinone type basic skeleton of the dye in the recording medium, a substituent having a structure that increases the π-electron system conjugation property, or
It is carried out by donating an electron or imparting a substituent having a property of accepting an electron. That is, the naphthoquinone basic skeleton is composed of an aromatic π-electron system, and if a substituent having a π-electron system that can be conjugated with the π-electron system in the naphthoquinone basic skeleton is selected, The π-electron system is also conjugated with the π-electron system of the substituent, and the absorption spectrum of the dye shifts to the long wavelength side. Furthermore, if a substituent having an electron-donating property or an electron-accepting property is added, intramolecular charge transfer occurs in the dye molecule itself, and the absorption spectrum of the dye molecule shifts to the long wavelength side.

このように、π電子系を有する置換基と、電子供与性の
置換基および電子受容性の置換基は、色素分子の吸収ス
ペクトルを長波長側に有効にシフとさせる効果をもつが
その効果は、互いに相乗的でもあるため、π電子系の置
換基と電子供与性の置換基または電子受容性の置換基と
を同時に付与することにより色素の吸収スペクトルの長
波長化はより提進される。
Thus, a substituent having a π-electron system, and an electron-donating substituent and an electron-accepting substituent have an effect of effectively shifting the absorption spectrum of the dye molecule to the long wavelength side, but the effect is Since they are also synergistic with each other, it is possible to further promote the wavelength extension of the absorption spectrum of the dye by simultaneously providing the π electron system substituent and the electron donating substituent or the electron accepting substituent.

また、具体的に、色素がPHB反応を起こすには、下記の
分子構造(I)の置換基のうち、X1とX4の組合せ、ある
いは、X5とX8の組合せのうち、少なくとも1つの組合
せの置換基が、-NH結合および-OH結合のどちらか一方を
含んでいなければならないが、好ましくは、少なくとも
どちらか1方の組合せの2つの置換基が共に、-NH結合
および-OH結合のどちらか1方を含んでいるのが好まし
い。
Further, specifically, in order to cause the PHB reaction of the dye, at least one of the combinations of X 1 and X 4 or the combination of X 5 and X 8 among the substituents of the following molecular structure (I) is required. The substituents of one combination must contain either an —NH bond or an —OH bond, but preferably two substituents of at least one combination are together —NH bond and —OH. It preferably contains either one of the OH bonds.

分子構造(I) ここでXは置換基である。Molecular structure (I) Here, X is a substituent.

〔実施例〕〔Example〕

以下、この発明の実施例を示す。 Examples of the present invention will be shown below.

実施例1 分子構造(I)の置換基としてX4とX8に電子供与性の強
い-NH2基(アミノ基)を付与し、かつX1とX5に-OH基
(ヒドロキシ基)を用いて、PHB反応を起こす能力を持
たせるととも、X2としてπ電子系を有すると共に電子
供与性のアルキル基(-CH3)とアルコキシ基(-OC2H4OC
6H13)を有するフエニル誘導体基を付与したナフトキノ
ン誘導体(N1)を得たところ、そのものの吸収スペク
トルのピークは645nm以上にまで長波長化した。
Example 1 As a substituent of the molecular structure (I), X 4 and X 8 are provided with —NH 2 group (amino group) having a strong electron donating property, and X 1 and X 5 are provided with —OH group (hydroxy group). It has the ability to cause a PHB reaction, and has an electron donating alkyl group (-CH 3 ) and an alkoxy group (-OC 2 H 4 OC) as well as having a π electron system as X 2.
When a naphthoquinone derivative (N1) having a phenyl derivative group having 6 H 13 ) was obtained, the peak of the absorption spectrum of the naphthoquinone derivative itself became longer than 645 nm.

なお次の骨格だけのキニザリン(従来)の吸収スペクト
ルのピークは510nm程度である。
The peak of the absorption spectrum of quinizarin (conventional) having only the following skeleton is about 510 nm.

実施例2 分子構造(I)の置換基として、X1とX4に電子供与性の
強い-NH2基を付与し、かつ、PHB反応を起こす能力を持
たせるとともに、X2とX3に電子受容性の強い (カルボニル基)を共に用い、さらには2つのカルボニ
ル基を電子供与性であるイミド結合にしたナフトキノン
誘導体(N2)を得たところ、そのものの吸収スペクト
ルのピークは、680nm以上にまで長波長化した。
Example 2 As a substituent of the molecular structure (I), X 1 and X 4 are provided with —NH 2 group having a strong electron donating property, and the ability to cause PHB reaction is imparted, and X 2 and X 3 are added. Strong electron accepting property When a naphthoquinone derivative (N2) in which (carbonyl group) was used together and two carbonyl groups were electron-donating imide bonds was obtained, the absorption spectrum peak of the naphthoquinone derivative itself became longer than 680 nm. .

(R2はアルキル基あるいはアルコキシ基) 実施例3 分子構造(I)の置換基として、X1とX4に、電子供与性
の強い-NH2基を付与し、かつ、PHB反応を起こす能力を
持たせるとともに、X2とX3に電子受容性の強い (チオカルボニル基)とをそれぞれ用い、そらには、そ
れらを電子供与性であるイミド類似結合にしたナフトキ
ノン誘導体(N3)を得たところ、そのものの吸収スペ
クトルのピークは、760nm以上にまで長波長化した。
(R 2 is an alkyl group or an alkoxy group) Example 3 Ability to give a strong electron-donating —NH 2 group to X 1 and X 4 as a substituent of the molecular structure (I) and cause a PHB reaction And has a strong electron accepting property for X 2 and X 3. (Thiocarbonyl group) and naphthoquinone derivative (N3) in which they are formed into an electron-donating imide-like bond, respectively, and the absorption spectrum peak of the naphthoquinone derivative was 760 nm or longer. Turned into

(R3はアルキル基あるいはアルコキシ基) 実施例4 分子構造(I)の置換基として、X1とX4に電子供与性の
強い-NH2基を付与し、かつ、PHB反応を起こす能力を持
たせるとともに、X2には電子受容性の強い を、X3にはナフトキノン骨格のπ電子系と共役しうる (イミノ類似基)を有する置換基を用い、かつ、それら
を電子供与性であるイミド類似結合にしたナフトキノン
誘導体(N4)を得たところそのものの吸収スペクトル
のピークは670nm以上にまで長波長化した。
(R 3 is an alkyl group or an alkoxy group) Example 4 As a substituent of the molecular structure (I), the ability to give —NH 2 group having a strong electron donating property to X 1 and X 4 and to cause PHB reaction. X 2 has a strong electron accepting property Can be conjugated to X 3 with the π-electron system of the naphthoquinone skeleton When a naphthoquinone derivative (N4) in which a substituent having (imino-like group) is used and which is an electron-donating imide-like bond is obtained, the peak of the absorption spectrum of the naphthoquinone derivative itself becomes longer than 670 nm .

(R4とR5はアルキル基あるいはアルコキシ基) 実施例5 分子構造(I)の置換基としてX1とX4に電子供与性の強
い-NH2基を付与し、かつ、PHB反応を起こす能力を持た
せるとともに、XX3とX4に電子受容性の強い を用い、かつそれらを電子供与性であるイミドにし、か
つX8に電子供与性の強いアミノ基を用いた、ナフトキ
ノン誘導体(N5)を得たところそのものの吸収スペク
トルのピークは600nm以上にまで長波長化した。
(R 4 and R 5 are alkyl groups or alkoxy groups) Example 5 A —NH 2 group having a strong electron donating property is added to X 1 and X 4 as a substituent of the molecular structure (I), and a PHB reaction is caused. It has the ability and has a strong electron accepting property to X X3 and X 4. And using them as electron-donating imides and using an electron-donating amino group for X 8 to obtain a naphthoquinone derivative (N5), the peak of its absorption spectrum is as long as 600 nm or more. Wavelength changed.

(R6とR7はアルキル基あるいはアルコキシ基) なおX1〜X8に用いる置換基は、実施例1〜5に示され
たものに限るものではなく、発明の詳細な説明中に示し
た性質をもつ他のものをも用いることが出来る。
(R 6 and R 7 are alkyl groups or alkoxy groups) The substituents used for X 1 to X 8 are not limited to those shown in Examples 1 to 5, and are shown in the detailed description of the invention. Others with properties can also be used.

〔発明の効果〕〔The invention's effect〕

以上のようにこの発明の光記録材料は固有の光吸収波長
域を有し、当該吸収波長域の光を吸収することにより、
光の吸収の前後でホールバーニング反応を起こして光吸
収スペクトル特性が変化して情報を記録する性質を有す
る記録体の分子の置換基として、π電子系を有したも
の、電子供与性を有したもの、電子受容性を有したもの
を少なくとも1種用い光記録体の光吸収スペクトルの波
長域を長波長化したので、半導体レーザの発振波長域に
近づけることができ、半導体レーザを書込み用レーザに
用い得るPHB光記録材料を得ることができる。
As described above, the optical recording material of the present invention has a unique light absorption wavelength range, and by absorbing light in the absorption wavelength range,
It had a π-electron system as a substituent of the molecule of the recording material, which had the property of recording information by causing a hole-burning reaction before and after absorption of light and changing the optical absorption spectrum characteristics, and had an electron donating property. Since the wavelength range of the optical absorption spectrum of the optical recording material is made longer by using at least one type of material having an electron accepting property, it is possible to approach the oscillation wavelength range of the semiconductor laser, and the semiconductor laser becomes a writing laser. A usable PHB optical recording material can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図は、この発明と同種類の光記録材料を用いた一般
的な光記録装置を示す構成図、第2図は、この発明と同
種類の光記録材料の光吸収スペクトル特性を示す図、第
3図は、この発明と同種類の光記録材料によるPHB光記
録を行つた後の光吸収スペクトル特性を示す図である。
図において、(1)はレーザ光源、(2)はレーザ光、(3)は
光記録材料、(4)は検知器である。
FIG. 1 is a block diagram showing a general optical recording device using an optical recording material of the same kind as this invention, and FIG. 2 is a diagram showing optical absorption spectrum characteristics of an optical recording material of the same kind as this invention. FIG. 3 is a diagram showing optical absorption spectrum characteristics after performing PHB optical recording with an optical recording material of the same kind as the present invention.
In the figure, (1) is a laser light source, (2) is a laser beam, (3) is an optical recording material, and (4) is a detector.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−200546(JP,A) 特開 昭62−275244(JP,A) 特開 昭61−32051(JP,A) 特開 昭58−51355(JP,A) 特公 平4−23256(JP,B2) 国際公開W088/09958(WO,A) 日本写真学会誌、第49巻、第5号、5 月、1986 清水直樹「レーザ高密度記録材 料」 P.383−387 日本色彩学会編「新編色彩科学ハンドブ ック」25、2月、1980(25.02.80)東京 大学出版会 P.654−655 ─────────────────────────────────────────────────── --Continued from the front page (56) References JP 62-200546 (JP, A) JP 62-275244 (JP, A) JP 61-32051 (JP, A) JP 58- 51355 (JP, A) Japanese Patent Publication 4-23256 (JP, B2) International Publication W088 / 09958 (WO, A) Journal of the Photographic Society of Japan, Volume 49, No. 5, May, 1986 Naoki Shimizu "Laser High Density" Recording material fee "P. 383-387 "New Color Science Handbook," edited by the Japan Society for Color Science, 25, February, 1980 (25.02.80), University of Tokyo Press, P. 654-655

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】固有の光吸収波長域を有し、当該吸収波長
域の光を吸収することにより、光の吸収の前後でホール
バーニング反応を起こして光吸収スペクトル特性が変化
して情報を記録する性質を有する記録体の分子の置換基
として、π電子系を有したもの、電子供与性を有したも
の、電子受容性を有したものを少なくとも1種用い光記
録体の光吸収スペクトルの波長域を長波長化したことを
特徴とする光記録材料。
1. Having a unique light absorption wavelength range, by absorbing light in the absorption wavelength range, a hole burning reaction occurs before and after absorption of light to change the light absorption spectrum characteristics and record information. The wavelength of the optical absorption spectrum of the optical recording material is at least one of those having a π-electron system, those having an electron-donating property, and those having an electron-accepting property as a substituent of the molecule of the recording material having the property of An optical recording material having a longer wavelength region.
【請求項2】光記録体として、キノン骨格を有する以下
の分子構造で示される分子を用いることを特徴とする特
許請求の範囲第1項記載の光記録材料。 ここでXは置換基である。
2. The optical recording material according to claim 1, wherein a molecule having a quinone skeleton and having the following molecular structure is used as the optical recording material. Here, X is a substituent.
【請求項3】光記録の置換基X1とX4の組合せ及びX5
とX3の組合せの少なくとも一方の組合せの2つの置換
基が共に、−NH結合および−OH結合のうちのいずれ
かであることを特徴とする特許請求の範囲第1項又は第
2項記載の光記録材料。
3. A combination of optical recording substituents X 1 and X 4 and X 5.
The two substituents in at least one of the combination of X and X 3 are both —NH bond and —OH bond. Optical recording material.
JP61008316A 1986-01-17 1986-01-17 Optical recording material Expired - Fee Related JPH0621931B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61008316A JPH0621931B2 (en) 1986-01-17 1986-01-17 Optical recording material
PCT/JP1987/000373 WO1988009958A1 (en) 1986-01-17 1987-06-10 Optical recording material
DE3790966A DE3790966C2 (en) 1986-01-17 1987-06-10 Optical recording material
DE873790966T DE3790966T1 (en) 1986-01-17 1987-06-10 OPTICAL RECORDING MATERIAL

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61008316A JPH0621931B2 (en) 1986-01-17 1986-01-17 Optical recording material
PCT/JP1987/000373 WO1988009958A1 (en) 1986-01-17 1987-06-10 Optical recording material

Publications (2)

Publication Number Publication Date
JPS62165646A JPS62165646A (en) 1987-07-22
JPH0621931B2 true JPH0621931B2 (en) 1994-03-23

Family

ID=574690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61008316A Expired - Fee Related JPH0621931B2 (en) 1986-01-17 1986-01-17 Optical recording material

Country Status (3)

Country Link
JP (1) JPH0621931B2 (en)
DE (2) DE3790966T1 (en)
WO (1) WO1988009958A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109313297A (en) * 2016-06-15 2019-02-05 日本化药株式会社 Infrared shielding sheet, interlayer film for infrared shielding laminated glass, infrared shielding laminated glass and manufacturing method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2614040B2 (en) * 1986-10-20 1997-05-28 キヤノン株式会社 Optical recording medium
DE19732065A1 (en) * 1997-07-25 1999-01-28 Harm Drecoll Information storage on a storage medium

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132051A (en) * 1984-07-23 1986-02-14 Nippon Telegr & Teleph Corp <Ntt> Wavelength selecting optical storage material
US4666819A (en) * 1985-03-11 1987-05-19 Minnesota Mining And Manufacturing Company Optical information storage based on polymeric dyes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
日本写真学会誌、第49巻、第5号、5月、1986清水直樹「レーザ高密度記録材料」P.383−387
日本色彩学会編「新編色彩科学ハンドブック」25、2月、1980(25.02.80)東京大学出版会P.654−655

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109313297A (en) * 2016-06-15 2019-02-05 日本化药株式会社 Infrared shielding sheet, interlayer film for infrared shielding laminated glass, infrared shielding laminated glass and manufacturing method thereof

Also Published As

Publication number Publication date
JPS62165646A (en) 1987-07-22
WO1988009958A1 (en) 1988-12-15
DE3790966T1 (en) 1989-05-24
DE3790966C2 (en) 1995-06-08

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