JPH0622196B2 - Method of controlling development of resist pattern - Google Patents
Method of controlling development of resist patternInfo
- Publication number
- JPH0622196B2 JPH0622196B2 JP59073462A JP7346284A JPH0622196B2 JP H0622196 B2 JPH0622196 B2 JP H0622196B2 JP 59073462 A JP59073462 A JP 59073462A JP 7346284 A JP7346284 A JP 7346284A JP H0622196 B2 JPH0622196 B2 JP H0622196B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- development
- resist pattern
- monitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、荷電子線ポジ型レジストの現像制御方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for controlling development of a valence electron positive resist.
従来例の構成とその問題点 半導体素子の微細化・高集積化が進むにつれて、高精度
微細レジストパターンの形成が重要になっている。荷電
子線ポジ型レジストの場合、パターン幅は現像によって
制御される。現像の制御方法として、現像時間を一定に
する方法とパターン幅を測定する方法がある。前者の方
法とは、あらかじめ電子顕微鏡などを用いて現像時間と
現像状態の関係を調べ、適正現像時間を決め、一定時間
現像する方法である。荷電子線ポジ型レジストの場合、
現像液に、主として有機溶剤を用いるため、現像温度の
ばらつきに伴なう現像状態のばらつきが大きく、更に、
レジスト膜厚のばらつきによる現像状態のばらつきもあ
り、したがって、この方法では、高精度なレジストパタ
ーンは期待できず、実用的とは言えない。一方、後者の
方法とは、光学的に拡大したレジストパターンの幅を測
定することにより現像制御する方法で、これによると、
寸法測微計による測定精度が不充分であり、とりわけ、
サブミクロンのパターンによると、ほとんど、測定でき
なくなる。Configuration of Conventional Example and Problems Thereof With the progress of miniaturization and high integration of semiconductor elements, formation of a highly precise fine resist pattern has become important. In the case of a valence electron beam positive resist, the pattern width is controlled by development. As a method of controlling development, there are a method of keeping the developing time constant and a method of measuring the pattern width. The former method is a method in which the relationship between the development time and the development state is examined in advance using an electron microscope or the like, an appropriate development time is determined, and development is performed for a certain period of time. In the case of positive electron beam resist,
Since an organic solvent is mainly used for the developing solution, there is a large variation in the developing state due to the variation in the developing temperature.
There is also a variation in the development state due to a variation in the resist film thickness. Therefore, with this method, a highly accurate resist pattern cannot be expected, which is not practical. On the other hand, the latter method is a method of controlling development by measuring the width of an optically enlarged resist pattern.
Insufficient measurement accuracy by dimensional micrometer,
Submicron patterns make it almost impossible to measure.
発明の目的 本発明は、これらの問題点を解決し、微細な荷電子ポジ
型レジストパターンを高精度に、しかも容易に形成する
ためのレジストパターンの現像制御方法を提供するもの
である。SUMMARY OF THE INVENTION The present invention solves these problems and provides a resist pattern development control method for forming a fine valence electron positive resist pattern with high accuracy and easily.
発明の構成 本発明は、基板上に形成した荷電子線ポジ型レジスト
に、荷電子線を用いて、所定パターンを形成する際に、
照射量の異なる複数個のパターンを試料の一部にモニタ
ーパターンとして形成し、モニタパターンの膜減りを観
察することにより、所定パターンのパターン幅を制御す
る方法であり、モニタパターンとして、等比級数的に変
化する照射量のパターンを持ち、その比ｒが ０＜ｒ≦１０0.01−１ で定められることを特徴とするレジストパターンの現像
制御方法であって、本発明を用いることによって、微細
な荷電子線ポジ型レジストパターンを精度よく、しかも
廉価・簡便に形成することが可能となる。Structure of the Invention The present invention, when using a valence electron beam to form a predetermined pattern on a valence electron beam positive resist formed on a substrate,
This is a method of controlling the pattern width of a predetermined pattern by forming a plurality of patterns with different irradiation amounts on a part of the sample as a monitor pattern and observing the film loss of the monitor pattern. A method for controlling development of a resist pattern, which has a pattern of an irradiation amount that varies with time and a ratio r thereof is defined by 0 <r ≦ 10 0.01 −1. It is possible to form a positive charge electron beam resist pattern with high accuracy and at low cost and easily.
実施例の説明 本発明の実施例を第１図ａ〜ｃ及び第２図に基づいて説
明する。はじめに、第１図ａのように、基板１上に、Ｐ
ＭＭＡ（ポリ・メチル・メタ・アクリレート）２を形成
する。つぎに、第１図ｂのように、２０ＫｅＶの電子線
を用いて、６４μc/cm2の露光量で所定パターン３をＰ
ＭＭＡ２の上に形成するとともに、ＰＭＭＡ２の一部
に、露光量が、１０μc/cm2から１００μc/cm2またとえ
ば、０＜ｒ≦１０0.01−１で表わされる等比級数ｒにし
たがって、等比級数的に異なる１００個の５０μｍ□の
パターン４をモニタとして形成する。次に、あらかじ
め、電子顕微鏡の断面観察により求めたレジストパター
ン幅とモニタパターンの膜減りの関係を基に、第１図ｃ
のように、モニタパターン４のうち所定露光量以上のパ
ターン５の残膜がなくなるまで現像し、レジストパター
ン６を形成する。なお、第１図ｄおよび同ｅは、第１図
ｂおよび同ｃの各対応物の平面パターン図である。Description of Embodiments An embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG. 1a, on the substrate 1, P
MMA (polymethylmethacrylate) 2 is formed. Next, as shown in FIG. 1b, the predetermined pattern 3 is printed with an exposure amount of 64 μc / cm 2 using an electron beam of 20 KeV.
While being formed on the MMA2, a part of the PMMA2 has an exposure dose of 10 μc / cm 2 to 100 μc / cm 2, for example, a geometrical ratio r represented by 0 <r ≦ 10 0.01 −1. 100 50 μm square patterns 4 different in series are formed as monitors. Next, based on the relationship between the resist pattern width and the film loss of the monitor pattern, which is obtained by observing the cross section of the electron microscope in advance, FIG.
As described above, the resist pattern 6 is formed by developing the monitor pattern 4 until the residual film of the pattern 5 having a predetermined exposure amount or more is eliminated. 1d and 1e are plan pattern diagrams of the corresponding parts in FIGS. 1b and 1c.
この方法では、比較的低倍率の光学顕微鏡で観察でき、
モニタパターンの残膜の状態も容易に判定可能であるか
ら、簡便・安価で個人差のない現像制御ができる。ま
た、第２図ａの特性図にみられるように、電子顕微鏡の
断面観察より求めたレジスト寸法とモニタパターンの膜
減り状態の関係より実施例で用いたモニタパターンの現
像制御分解能は0.03μｍと充分に高い。更に第２図ｂの
特性図のように、現像温度ばらつきによる精度の低下は
ほとんどなく高精度なレジストパターンを形成できる。With this method, you can observe with a relatively low magnification optical microscope,
Since the state of the residual film of the monitor pattern can be easily determined, the development control can be performed easily and inexpensively without individual differences. Further, as seen in the characteristic diagram of FIG. 2a, the development control resolution of the monitor pattern used in the example is 0.03 μm from the relationship between the resist dimension obtained by the cross-sectional observation of the electron microscope and the film reduction state of the monitor pattern. High enough. Further, as shown in the characteristic diagram of FIG. 2B, there is almost no decrease in accuracy due to variations in developing temperature, and a highly accurate resist pattern can be formed.
なお、本発明の現像制御法を用いれば、試料間のレジス
ト膜厚ばらつきや露光電流密度のばらつきがある場合に
も、パターン寸法精度の低下は少なく、サブミクロンパ
ターンも簡便・高精度に現像することが可能である。By using the development control method of the present invention, even if there is a variation in resist film thickness between samples or a variation in exposure current density, the pattern dimension accuracy does not decrease, and submicron patterns can be developed easily and with high accuracy. It is possible.
発明の効果 以上詳述したように、本発明は、基板上に形成した荷電
子線ポジ型レジストに荷電子線を用いて、所定パターン
を形成する際に、照射量の異なる複数個のパターンを試
料の一部にモニタパターンとして形成し、モニタパター
ンの膜減りを観察することにより、所定パターンのパタ
ーン幅を制御する方法であり、モニタパターンとして、
等比級数的に変化する照射量のパターンを持ち、その比
ｒが、 ０＜ｒ≦１０0.01−１ で定められることを特徴とするレジストパターンの現像
制御方法であって、本発明を用いることにより、荷電子
線ポジ型レジストパターンを高精度に、再現性よく、廉
価・簡便に形成することが可能となる。Effects of the Invention As described in detail above, the present invention uses a valence electron beam for a valence electron beam positive resist formed on a substrate to form a plurality of patterns having different irradiation doses when forming a predetermined pattern. It is a method of controlling the pattern width of a predetermined pattern by forming a monitor pattern on a part of the sample and observing the film loss of the monitor pattern.
A method for controlling development of a resist pattern, which has a pattern of a dose that changes in geometric progression and a ratio r thereof is defined as 0 <r ≦ 10 0.01 −1, and uses the present invention. This makes it possible to form a positive charge electron beam resist pattern with high accuracy, good reproducibility, and at low cost and in a simple manner.
第１図ａ〜ｃは本発明によるＰＭＭＡレジストパターン
形成工程の断面図、同ｄ，ｅはそれぞれ同ｂ，ｃの平面
図、第２図ａ，ｂは現像によるレジストパターン幅とモ
ニタパターンの膜減りの関係を示す特性図である。 １……基板、２……ＰＭＭＡ、３……パターン、４……
モニタパターン、５……残膜のない現像後のモニタパタ
ーン、６……現像後のレジストパターン。1A to 1C are cross-sectional views of the PMMA resist pattern forming process according to the present invention, FIGS. 1A to 1D are plan views of the same b and c, and FIGS. 2A and 2B are resist pattern width and monitor pattern film by development. It is a characteristic view which shows the relationship of decrease. 1 ... Substrate, 2 ... PMMA, 3 ... Pattern, 4 ...
Monitor pattern, 5 ... Monitor pattern after development without residual film, 6 ... Resist pattern after development.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−4018（ＪＰ，Ａ) 特開 昭56−162834（ＪＰ，Ａ) 特開 昭55−148427（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-59-4018 (JP, A) JP-A-56-162834 (JP, A) JP-A-55-148427 (JP, A)
Claims (2)
に荷電子線を用いて、所定パターンを形成する際に、照
射量の異なる複数個のパターンを試料の一部にモニタパ
ターンとして形成し、該モニタパターンのうち所定露光
量以上のパターンの残膜がなくなるまで現像することに
より、前記所定パターンのパターン幅を制御することを
特徴とするレジストパターンの現像制御方法。1. When a predetermined pattern is formed by using a valence electron beam on a positive valence electron beam resist formed on a substrate, a plurality of patterns having different irradiation doses are formed as monitor patterns on a part of a sample. Then, the resist pattern development control method is characterized in that the pattern width of the predetermined pattern is controlled by developing until the residual film of the pattern of the predetermined exposure amount or more of the monitor pattern disappears.
する照射量のパターンを持ち、その比ｒが ０＜ｒ≦１０0.01−１ で定められることを特徴とする特許請求の範囲第１項記
載のレジストパターンの現像制御方法。2. A monitor pattern having a pattern of a dose that changes in geometric progression, and the ratio r thereof is defined as 0 <r ≦ 10 0.01 −1. A method for controlling development of a resist pattern as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59073462A JPH0622196B2 (en) | 1984-04-12 | 1984-04-12 | Method of controlling development of resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59073462A JPH0622196B2 (en) | 1984-04-12 | 1984-04-12 | Method of controlling development of resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60217626A JPS60217626A (en) | 1985-10-31 |
| JPH0622196B2 true JPH0622196B2 (en) | 1994-03-23 |
Family
ID=13518945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59073462A Expired - Lifetime JPH0622196B2 (en) | 1984-04-12 | 1984-04-12 | Method of controlling development of resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622196B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1788445A1 (en) * | 2005-11-18 | 2007-05-23 | Advanced Mask Technology Center GmbH & Co. KG | A method of determining an exposure dose and exposure apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842229A (en) * | 1981-09-07 | 1983-03-11 | Fujitsu Ltd | Resist pattern formation |
| JPS58114429A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Electron beam exposure method |
-
1984
- 1984-04-12 JP JP59073462A patent/JPH0622196B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60217626A (en) | 1985-10-31 |
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