JPH0622197B2 - Drawing method and device - Google Patents
Drawing method and deviceInfo
- Publication number
- JPH0622197B2 JPH0622197B2 JP58082615A JP8261583A JPH0622197B2 JP H0622197 B2 JPH0622197 B2 JP H0622197B2 JP 58082615 A JP58082615 A JP 58082615A JP 8261583 A JP8261583 A JP 8261583A JP H0622197 B2 JPH0622197 B2 JP H0622197B2
- Authority
- JP
- Japan
- Prior art keywords
- irradiation amount
- internal
- data
- circuit
- contour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. program control
- H01J37/3023—Program control
- H01J37/3026—Patterning strategy
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明は粒子線を用いて微細図形を描画する技術、特に
可変成形ビームを用いる描画技術において、高い描画精
度を実現するために好適な技術に関する。Description: TECHNICAL FIELD The present invention relates to a technique for drawing a fine figure by using a particle beam, and particularly to a technique suitable for realizing a high drawing precision in a drawing technique using a variable shaped beam.
電子またはイオンなどの荷電粒子を用いて微細図形を描
画する装置において、2枚のアパーチャーの中間に変更
機を配置し、試料に照射するビームの大きさを任意に変
更する可変成形ビームを用いたものが考えられる。In a device for drawing a fine figure using charged particles such as electrons or ions, a changer is arranged in the middle of two apertures, and a variable shaped beam for arbitrarily changing the size of the beam irradiating a sample is used. Things can be considered.
しかしながらこの描画装置において、描画に要する時間
を大巾に短縮出来るもののビームの大きさに比例してビ
ーム電流が増加し、ビーム内の各粒子の電荷の反発(ク
ーロン効果)によるぼけが生じ描画制度を制限するとい
う問題点が本発明者によりあきらかにされた。However, in this drawing device, the time required for drawing can be greatly shortened, but the beam current increases in proportion to the size of the beam, and blurring occurs due to the repulsion of the charge of each particle in the beam (Coulomb effect). Has been clarified by the present inventor.
この問題点を解決する手段として、図形の周辺部を小さ
いビームで描画する方法、クーロン効果およびレジスト
内部における散乱の小さくなる高電圧加速のビームを用
いる方法などが提案され得る。As means for solving this problem, there can be proposed a method of drawing a peripheral portion of a figure with a small beam, a method of using a high-voltage accelerating beam in which Coulomb effect and scattering inside the resist are small.
しかし、このような方法にあっては、試料の内部に深く
進入した粒子の後方散乱、およびビーム照射によるレジ
スト温度の上昇による特性変化が精度劣化の大きい原因
となることが、本発明者によって明らかにされた。特に
前述の高電加速ビームを用いる場合には散乱、温度上昇
の両者共が大となり問題である。However, it is clear by the present inventors that in such a method, the backscattering of particles deeply penetrating the inside of the sample and the characteristic change due to the rise in the resist temperature due to the beam irradiation cause a large accuracy deterioration. I was killed. In particular, when the above-mentioned high-electron accelerating beam is used, both scattering and temperature rise are large, which is a problem.
以下にこの問題点を図を用いて詳細に説明する。可変成
形ビームを用いた描画装置においては、第1図に示すよ
うに、その装置でショット可能な寸法より小さい寸法に
図形を分割して描画する。この場合、描画は図形の隅か
ら第1図のイロハニ・・・に示すような順序によって行
なわれ、また図形内におけるショット時間は一定であ
る。Hereinafter, this problem will be described in detail with reference to the drawings. In a drawing apparatus using a variable shaped beam, as shown in FIG. 1, a figure is divided and drawn into a size smaller than a size that can be shot by the apparatus. In this case, drawing is performed from the corner of the figure in the order as shown by Irohani in FIG. 1, and the shot time in the figure is constant.
クーロン効果を考慮した場合においても、第2図に示す
ように、周辺のショット面積を小さく制限することを除
いて、ショット順序およびショット時間に関しては本質
的に同じであり、前述の散乱および温度上昇の影響は免
れえない。Even when the Coulomb effect is taken into consideration, as shown in FIG. 2, the shot order and shot time are essentially the same except that the peripheral shot area is limited to a small value. Is unavoidable.
第3図はこれをグラフにより示したもので、(a)は照射
ビームの強度分布、(b)はレジストの内部に生じる潜像
の分布をそれぞれ示し、現像により、第3図(b)におけ
る直線D上の部分が図形として生じる。この場合、前記
の散乱および温度の効果により、図形のエッジ部の潜像
分布は第3図(b)の曲線Eに示すようにゆるやかな傾斜
を生じ、照射量および現象条件のわずかな差異により寸
法変化を生じ、また図形の隅の部分が円くなり、第3図
(c)の曲線に示すような不正確な図形となる。FIG. 3 is a graph showing this, in which (a) shows the intensity distribution of the irradiation beam, (b) shows the distribution of the latent image generated inside the resist, and FIG. The portion on the straight line D occurs as a figure. In this case, due to the effect of the above-mentioned scattering and temperature, the latent image distribution at the edge portion of the figure has a gentle inclination as shown by the curve E in Fig. 3 (b), and due to a slight difference in the irradiation amount and the phenomenon condition. Dimensional changes occur, and the corners of the figure are rounded.
The figure becomes inaccurate as shown by the curve in (c).
〔発明の目的〕 本発明の目的は、レジストの内部への電子散乱および温
度上昇に起因する図形の寸法精度低下を防ぎ、かつ描画
時間をも短縮できる描画技術を提供することにある。[Object of the Invention] An object of the present invention is to provide a drawing technique capable of preventing a decrease in dimensional accuracy of a figure due to electron scattering inside the resist and a temperature rise, and shortening a drawing time.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろ
う。The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。The outline of a typical invention among the inventions disclosed in the present application will be briefly described as follows.
すなわち、描画図形の内部図形を描画する照射量を周辺
部図形を描画する照射量よりも小さくし、輪郭部を描画
する照射量を内部図形を描画する照射量よりも、照射量
をゼロとする場合を含めて小さくすることにより、ビー
ムの散乱および温度上昇を抑えて、正確な描画図形が得
られる。That is, the irradiation amount for drawing the internal figure of the drawing figure is made smaller than the irradiation amount for drawing the peripheral figure, and the irradiation amount for drawing the contour part is made zero than the irradiation amount for drawing the internal figure. By reducing the size including the case, it is possible to suppress the scattering of the beam and the temperature rise and obtain an accurate drawing figure.
次に、本発明の実施例の説明に先立って、その前提とな
る技術について第4図〜第7図を参照して説明する。Next, prior to the description of the embodiments of the present invention, a technology as a premise thereof will be described with reference to FIGS. 4 to 7.
第4図は本発明の前提技術の描画装置を示すブロック図
である。第4図において、1は所望の描画図形に関する
データを記憶するメモリー、2はメモリー1に接続され
た分割判定回路、3は分割判定回路2に接続された分割
実行回路、4は分割実行回路3と前記分割判定回路2と
に接続されたショット分解回路、5はショット分解回路
4に接続された制御回路であり、この制御回路5は図示
しない描画動作部(鏡筒部)に制御信号を送出して所定
の描画動作を行わせるようになっている。FIG. 4 is a block diagram showing a drawing device according to the base technology of the present invention. In FIG. 4, 1 is a memory for storing data relating to a desired drawing figure, 2 is a division determination circuit connected to the memory 1, 3 is a division execution circuit connected to the division determination circuit 2, and 4 is a division execution circuit 3. And a shot decomposition circuit 5 connected to the division determination circuit 2 are control circuits connected to the shot decomposition circuit 4, and the control circuit 5 sends a control signal to a drawing operation unit (lens barrel unit) not shown. Then, a predetermined drawing operation is performed.
描画データを一時記憶したメモリー1は制御計算機(図
示せず)の指令にしたがってデータを順次分割判定回路
2に転送する。分割判定回路2はデータの短辺寸法を基
準と比較し、基準値に満たないものは分割不要としてシ
ョット分割回路4に、基準値を越えるものは分割実行回
路3にそれぞれデータを送出する。分割実行回路3は受
取ったデータを、第5図に示すように、あらかじめ定め
られた一定巾の複数の周辺部図形M1、M2…Mnと、
複数の内部図形N1,N2…Nnとに分割し、分割され
た周辺部図形M1〜Mnのデータを先にショット分解回
路4に送出し、後に内部図形N1〜Nnのデータを送出
する。この際、内部図形N1〜Nnのデータは露光ショ
ット時間を指定する部分を周辺部図形M1〜Mnのデー
タのショット時間よりも短く変更して送出する。The memory 1 in which the drawing data is temporarily stored transfers the data to the division determination circuit 2 in sequence according to a command from a control computer (not shown). The division determination circuit 2 compares the short-side dimension of the data with the reference, and if the reference value is less than the reference value, the data is sent to the shot division circuit 4, and if it exceeds the reference value, the data is sent to the division execution circuit 3. The division execution circuit 3 converts the received data into a plurality of peripheral figure M 1 , M 2 ... M n having a predetermined constant width, as shown in FIG.
N n is divided into a plurality of internal figures N 1 , N 2 ... N n , the data of the divided peripheral figures M 1 to M n are sent to the shot decomposition circuit 4 first, and later the internal figures N 1 to N n are divided. Send data. At this time, in the data of the internal figures N 1 to N n , the portion designating the exposure shot time is changed to be shorter than the shot time of the data of the peripheral figure M 1 to M n and is sent.
ショット分解回路4は受取ったデータをショット可能の
寸法に区切ってショット制御回路5に送り、制御回路5
はデータに従ってビーム寸法、ショット時間を制御し所
望の図形Lについての描画を行なう。The shot decomposition circuit 4 divides the received data into shot-capable dimensions and sends it to the shot control circuit 5.
Draws a desired figure L by controlling the beam size and shot time according to the data.
このようにして、所望の描画図形Lを周辺部図形N1〜
Nnと内部図形M1〜Mnとに分割し、内部図形を描画
する照射時間を周辺部図形を描画する照射時間よりも短
くして描画させると、所望の描画図形における内部図形
のビーム照射量が減少されることにより、荷電粒子の散
乱とレジスト内部の温度上昇が抑制されるため、照射ビ
ームの強度分布が第6図(a)に示されるような状態の場
合、レジスト内部の潜像分布は、第6図(b)に示される
ように、その潜像分布の端部における傾斜が急になり、
したがって、第6図(c)に示されるような正確な所望の
描画図形Lが得られる。In this way, the desired drawing figure L is converted into the peripheral figure N 1-
When N n and internal figures M 1 to M n are divided and the irradiation time for drawing the internal figure is made shorter than the irradiation time for drawing the peripheral figure, the beam irradiation of the internal figure in the desired drawing figure is performed. By reducing the amount, the scattering of charged particles and the temperature rise inside the resist are suppressed. Therefore, when the intensity distribution of the irradiation beam is as shown in Fig. 6 (a), the latent image inside the resist is reduced. The distribution has a steep slope at the end of the latent image distribution, as shown in FIG. 6 (b),
Therefore, an accurate desired drawing figure L as shown in FIG. 6 (c) can be obtained.
ところで、レジストの特性、ビーム加速電圧および描画
図形の大きさ等の各描画条件の要求に応じて、散乱およ
び温度上昇を十分に抑制するべく内部図形の照射時間を
短くして行くと、内部図形の露光量が小さくなりすぎ、
第7図に示すように、図形の中央部に欠陥が発生する危
険性がある。By the way, if the irradiation time of the internal figure is shortened in order to sufficiently suppress the scattering and the temperature rise in accordance with the requirements of each drawing condition such as the characteristics of the resist, the beam acceleration voltage and the size of the drawn figure, the internal figure is reduced. Exposure amount of too small,
As shown in FIG. 7, there is a risk that a defect will occur at the center of the figure.
これを防止するようにしたのが本発明の描画方法および
装置であって、その実施例が第8図〜第11図に示され
ている。This is prevented by the drawing method and apparatus of the present invention, the embodiment of which is shown in FIGS.
第8図に示すように、内部図形N1〜Nnの外縁輪郭を
二重にして輪郭部Pを形成し、この輪郭部Pの照射時間
を最も短く設定するとよい。As shown in FIG. 8, it is advisable to double the outer edge contours of the internal figures N 1 to N n to form the contour portion P and set the irradiation time of the contour portion P to the shortest.
すなわち、このように輪郭部Pの照射時間を最も短くす
ると、照射ビームの照射強度分布は第9図(a)に示すよ
うな状態になり、この場合におけるレジスト内部の潜像
分布は第9図(b)に示すような状態になり、第7図(b)に
おける欠陥は解消される。That is, when the irradiation time of the contour portion P is shortened as described above, the irradiation intensity distribution of the irradiation beam becomes as shown in FIG. 9 (a), and the latent image distribution inside the resist in this case is shown in FIG. The state shown in (b) is reached, and the defect in FIG. 7 (b) is resolved.
さらに、前記輪郭部Pにおける照射量を零、すなわちシ
ョットしないようにしてもよい。この場合、ビームの照
射強度分布は第10図(a)に示すような状態になり、そ
のレジスト内部の潜像分布は第10図(b)に示すような
状態になり、前記と同様、第7図(b)に示すように欠陥
は解消される。Further, the irradiation amount in the contour portion P may be zero, that is, the shot may not be shot. In this case, the irradiation intensity distribution of the beam is as shown in FIG. 10 (a), and the latent image distribution inside the resist is as shown in FIG. 10 (b). The defect is eliminated as shown in FIG. 7 (b).
このように輪郭部のショットを行わない場合、描画ショ
ット数を減少することができ、描画時間は短縮される。When the contour portion is not shot in this way, the number of drawing shots can be reduced and the drawing time can be shortened.
第11図は本発明による描画装置の一実施例を示すブロ
ック図であり、前記輪郭部Pを作り出す場合に使用する
のに好適なものを示している。FIG. 11 is a block diagram showing an embodiment of the drawing apparatus according to the present invention, which is suitable for use in creating the contour portion P.
第4図の場合と異なる点は、輪郭二重分割の要否を判定
する二重分割判定回路6と、輪郭分割を実行する輪郭分
割実行回路7と、データ修正回路8とを備えている点に
ある。The difference from the case of FIG. 4 is that a double division determination circuit 6 for determining the necessity of contour double division, a contour division execution circuit 7 for executing contour division, and a data correction circuit 8 are provided. It is in.
輪郭二重分割判定回路6はデータの短辺寸法を分割判定
回路2で用いた基準値よりも大きい別の基準値と比較
し、小さいものにはデータに否定コードを、大きいもの
には肯定コードをそれぞれ付加して輪郭分割実行回路7
に送出する。この回路7は前記実施例の分割実行回路3
と同様分割した周辺部図形M1〜Mnのデータをショッ
ト分解回路4に送出する。その後、先に付加されたコー
ドにより、否定コードの場合は内部図形N1〜Nnのデ
ータをショット時間データを書換えてショット分解回路
4へ、肯定コードの場合は内部図形のデータをデータ修
正回路8にそれぞれ送出する。データ修正回路8はデー
タの寸法をXY共一定量小さくし、ショット時間を短く
または零に書き換えてショット分解回路4に送出する。
ショット分解回路4は入力データをショット可能寸法に
区切つてショット制御回路5に送出する。制御回路5は
入力データにしたがってビーム寸法およびショット時間
を制御し、第8図に示すような輪郭部Pを有する図形を
描画させる。これにより、第9図または第10図に示す
ようなレジスト内部潜像が得られる。The contour double division determination circuit 6 compares the short side dimension of the data with another reference value that is larger than the reference value used in the division determination circuit 2, and a small code gives a negative code to the data and a large one gives an affirmative code. Contour division execution circuit 7
Send to. This circuit 7 is the division execution circuit 3 of the above embodiment.
Similarly, the data of the peripheral figure M 1 to M n divided is sent to the shot decomposition circuit 4. After that, in the case of a negative code, the data of the internal figures N 1 to N n is rewritten with the shot time data by the previously added code to the shot disassembling circuit 4. 8 respectively. The data correction circuit 8 reduces the data size by a fixed amount for both XY, shortens the shot time or rewrites it to zero, and sends it to the shot decomposition circuit 4.
The shot decomposition circuit 4 divides the input data into shotable dimensions and sends the shot data to the shot control circuit 5. The control circuit 5 controls the beam size and the shot time according to the input data, and draws the figure having the contour portion P as shown in FIG. As a result, a latent image inside the resist as shown in FIG. 9 or 10 is obtained.
(1) 内部図形を描画する照射量を周辺図形を描画する
照射量よりも小さくし、輪郭部を描画する照射量をゼロ
とする場合を含めて内部図形を描画する照射量よりも小
さくしたことから、ビーム増加が抑制されるとともに、
ビームの散乱およびレジスト内部の温度上昇が抑えられ
て、ビーム内粒子の反発によるぼけの発生が抑制され、
描画精度が向上される。(1) The irradiation dose for drawing the internal figure is smaller than the irradiation dose for drawing the peripheral figure, and it is smaller than the irradiation dose for drawing the internal figure, including the case where the irradiation dose for drawing the outline is zero. Therefore, while the beam increase is suppressed,
The scattering of the beam and the temperature rise inside the resist are suppressed, and the occurrence of blurring due to the repulsion of particles in the beam is suppressed,
The drawing accuracy is improved.
(2) また、潜在分布の端部における傾斜を急にするこ
とが可能となることからも、正確な描画図形が得られ
る。(2) In addition, since it is possible to make the slope at the end of the latent distribution steep, an accurate drawing figure can be obtained.
(3) 内部図形のショット時間を外部形のショットより
も短くし、さらに輪郭部のショット時間を内部図形のシ
ョットよりも短くするか、ショットを行なわないように
することにより、全体の描画時間が短縮化することがで
きる。(3) Make the shot time of the internal figure shorter than the shot of the external figure, and further make the shot time of the contour section shorter than the shot of the internal figure, or do not perform the shot. It can be shortened.
(4) 分割判定回路、分割実行回路を設けることによ
り、所望の描画図形データを入力すれば、複雑な操作お
よびソフトウエアを必要とすることなく、所定の分割描
画を実行させることができる。(4) By providing the division determination circuit and the division execution circuit, if desired drawing figure data is input, predetermined division drawing can be executed without requiring complicated operations and software.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Nor.
たとえば、前記描画装置を用いずに所望の描画データを
あらかじめ周辺部図形と内部図形とに分割しておき、こ
のデータを所定の描画装置に入力させて前記描画方法を
実行させることも可能である。但し、描画装置への入力
データ量が大巾に増加してしまう危惧がある。For example, it is possible to divide desired drawing data into a peripheral figure and an internal figure in advance without using the drawing apparatus and input the data to a predetermined drawing apparatus to execute the drawing method. . However, there is a risk that the amount of input data to the drawing device will significantly increase.
また、ビームの照射量の減少手段は、照射時間の短縮化
に限らず、エネルギの減少によってもよい。Further, the means for reducing the irradiation amount of the beam is not limited to the shortening of the irradiation time, and may be the reduction of energy.
なお、描画する図形の寸法(短辺寸法)が充分小さい時
には周辺部図形と内部図形とを区別することは不要であ
る。When the size (short side size) of the figure to be drawn is sufficiently small, it is not necessary to distinguish the peripheral figure from the internal figure.
また周辺部図形を切り出した場合、内部図形をショット
するビームはクーロン効果によるぼけの影響があって
も、描画図形の精度には影響しないので、描画装置で作
り得る最大寸法のビームを用いることはもちろんであ
る。In addition, when the peripheral figure is cut out, the beam for shooting the internal figure does not affect the accuracy of the drawn figure even if it is affected by blurring due to the Coulomb effect. Of course.
第1図は描画方法の一例を示す説明図、 第2図は分割図形描画方法を示す説明図、 第3図(a)は照射ビームの強度分布を示す線図、 同図(b)はレジストの潜像分布を示す線図、 同図(c)は描画図形を示す説明図、 第4図は本発明の前提としての描画装置を示すブロック
図、 第5図は本発明の前提としての描画方法を示す説明図、 第6図(a)は照射ビームの強度分布を示す線図、 同図(b)はレジストの潜像分布を示す線図、 同図(c)は描画図形を示す説明図、 第7図(a)は照射ビームの強度分布を示す線図、 同図(b)はレジストの潜像分布を示す線図、 第8図は本発明による描画方法の一実施例を示す説明
図、 第9図(a)は照射ビームの強度分布を示す線図、 同図(b)はレジストの潜像分布を示す線図、 第10図(a)は照射ビームの強度分布を示す線図、 同図(b)はレジストの潜像分布を示す線図、 第11図は本発明による描画装置の一実施例を示すブロ
ック図である。 1……メモリー、2……分割判定回路、3……分割実行
回路、4……ショット分解回路、5……制御回路、6…
…輪郭二重分割判定回路、7……二重分割実行回路、8
……データ修正回路。FIG. 1 is an explanatory view showing an example of a drawing method, FIG. 2 is an explanatory view showing a divided figure drawing method, FIG. 3 (a) is a diagram showing the intensity distribution of an irradiation beam, and FIG. Of the latent image distribution, FIG. 4C is an explanatory diagram showing a drawing figure, FIG. 4 is a block diagram showing a drawing device as a premise of the present invention, and FIG. 5 is a drawing as a premise of the present invention. FIG. 6 (a) is a diagram showing the intensity distribution of the irradiation beam, FIG. 6 (b) is a diagram showing the latent image distribution of the resist, and FIG. 6 (c) is a diagram showing a drawing figure. FIG. 7 (a) is a diagram showing the intensity distribution of the irradiation beam, FIG. 7 (b) is a diagram showing the latent image distribution of the resist, and FIG. 8 is an embodiment of the drawing method according to the present invention. Explanatory drawing, FIG. 9 (a) is a diagram showing the intensity distribution of the irradiation beam, FIG. 9 (b) is a diagram showing the latent image distribution of the resist, and FIG. 10 (a) is the intensity distribution of the irradiation beam. Diagram, same FIG. 11B is a diagram showing the latent image distribution of the resist, and FIG. 11 is a block diagram showing an embodiment of the drawing apparatus according to the present invention. 1 ... Memory, 2 ... Division determination circuit, 3 ... Division execution circuit, 4 ... Shot decomposition circuit, 5 ... Control circuit, 6 ...
... Contour double division determination circuit, 7 ... Double division execution circuit, 8
...... Data correction circuit.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松岡 玄也 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 松坂 尚 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭55−118633(JP,A) 特開 昭53−120276(JP,A) 特開 昭52−117578(JP,A) 実開 昭59−140436(JP,U) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Genya Matsuoka, 1-280, Higashi Koikekubo, Kokubunji City, Tokyo Metropolitan Research Laboratory, Hitachi, Ltd. (72) Takashi Matsuzaka, 1-280 Higashi Koikekubo, Kokubunji City, Tokyo Hitachi, Ltd. (56) References JP 55-118633 (JP, A) JP 53-120276 (JP, A) JP 52-117578 (JP, A) Actual development 59-140436 (JP , U)
Claims (4)
照射して所望の図形を描画する描画方法において、前記
所望の描画図形を周辺部図形と内部図形とに分割すると
ともに、前記内部図形の輪郭を二重に分解し、前記内部
図形を描画する照射量を前記周辺部図形を描画する照射
量よりも小さくし、前記二重の輪郭により形成される輪
郭部を描画する照射量を前記内部図形を描画する照射量
よりも小さくして、前記輪郭部を描画する照射量を最小
にしたことを特徴とする描画方法。1. A drawing method for drawing a desired figure by irradiating a sample with a shape-changeable charged particle beam, wherein the desired figure is divided into a peripheral figure and an internal figure, and the internal figure is divided. Is divided into two parts, the irradiation amount for drawing the internal figure is made smaller than the irradiation amount for drawing the peripheral figure, and the irradiation amount for drawing the contour part formed by the double outline is A drawing method characterized in that the irradiation amount for drawing the contour is minimized by making the irradiation amount smaller than that for drawing the internal figure.
ことを特徴とする特許請求に範囲第1項記載の描画方
法。2. The drawing method according to claim 1, wherein the irradiation amount for drawing the contour portion is set to zero.
照射して所望の図形を描画する描画装置において、所望
の描画図形のデータを記憶するメモリーと、このメモリ
ーからの図形データの短辺寸法を基準値と比較して基準
値を超えるデータの図形を周辺部図形と内部図形とに分
割すべきと判断する分割判定回路と、前記基準値よりも
大きい輪郭用基準値と比較してその輪郭用基準値を超え
るデータの図形については内部図形の輪郭を二重にすべ
きと判断する二重分割判定回路と、前記内部図形を描画
する照射量を前記周辺部図形を描画する照射量よりも小
さく設定し、かつ前記輪郭部を描画する照射量を前記内
部図形を描画する照射量よりも小さくして、前記輪郭部
を描画する照射量を最小に設定する分割実行回路と、こ
の分割実行回路からのデータをショット可能寸法に分解
するショット分解回路と、このショット分解回路からの
データにより描画動作を制御する制御回路とを備えたこ
とを特徴とする描画装置。3. A drawing device for irradiating a sample with a shape-changeable charged particle beam to draw a desired figure, and a memory for storing data of a desired figure and a short side of the figure data from this memory. A division determination circuit for comparing a dimension with a reference value to determine that a figure having data exceeding the reference value should be divided into a peripheral figure and an internal figure, and comparing with a contour reference value larger than the reference value. For a figure of data that exceeds the contour reference value, a double division determination circuit that determines that the contour of the internal figure should be doubled, and the irradiation amount for drawing the internal figure is determined from the irradiation amount for drawing the peripheral figure. And a division execution circuit for setting the irradiation amount for drawing the contour portion to be smaller than the irradiation amount for drawing the internal figure so as to set the irradiation amount for drawing the contour portion to the minimum. Circuit Decomposing shot separation circuit shot possible dimension data of the drawing apparatus characterized by comprising a control circuit for controlling the writing operation by the data from this shot decomposition circuit.
照射量をゼロに設定するようにしたことを特徴とする特
許請求の範囲第3項記載の描画装置。4. The drawing apparatus according to claim 3, wherein the division execution circuit sets an irradiation amount for drawing the contour portion to zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58082615A JPH0622197B2 (en) | 1983-05-13 | 1983-05-13 | Drawing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58082615A JPH0622197B2 (en) | 1983-05-13 | 1983-05-13 | Drawing method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208720A JPS59208720A (en) | 1984-11-27 |
| JPH0622197B2 true JPH0622197B2 (en) | 1994-03-23 |
Family
ID=13779369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58082615A Expired - Lifetime JPH0622197B2 (en) | 1983-05-13 | 1983-05-13 | Drawing method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622197B2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6159827A (en) * | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | Electron beam exposure system |
| JPS63155145A (en) * | 1986-12-19 | 1988-06-28 | Seiko Instr & Electronics Ltd | Correcting method for white spot defect of mask |
| JP2690911B2 (en) * | 1987-10-26 | 1997-12-17 | 株式会社日立製作所 | Electron beam drawing method |
| JPH02210814A (en) * | 1989-02-10 | 1990-08-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH05175105A (en) * | 1991-12-20 | 1993-07-13 | Fujitsu Ltd | Drawing method |
| KR20070086766A (en) * | 2004-12-01 | 2007-08-27 | 몰레큘러 임프린츠 인코퍼레이티드 | Exposure Methods for Thermal Management for Imprint Lithography Processes |
| JP2007043078A (en) | 2005-07-04 | 2007-02-15 | Nuflare Technology Inc | Drawing apparatus and drawing method |
| EP1788445A1 (en) | 2005-11-18 | 2007-05-23 | Advanced Mask Technology Center GmbH & Co. KG | A method of determining an exposure dose and exposure apparatus |
| JP5182641B2 (en) * | 2008-12-01 | 2013-04-17 | 凸版印刷株式会社 | Photomask pattern data generation method, photomask pattern data generation apparatus, and program |
| DE102010004939A1 (en) * | 2010-01-18 | 2011-07-21 | EQUIcon Software GmbH Jena, 07745 | Method for controlling the electron beam exposure of wafers and masks with proximity correction |
| JP5616674B2 (en) * | 2010-04-20 | 2014-10-29 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing apparatus and charged particle beam drawing method |
| JP5987381B2 (en) * | 2012-03-19 | 2016-09-07 | 大日本印刷株式会社 | Determination method of electron beam dose |
| JP6815192B2 (en) * | 2016-12-22 | 2021-01-20 | 株式会社ニューフレアテクノロジー | Multi-charged particle beam drawing device and multi-charged particle beam drawing method |
| JP7430094B2 (en) * | 2020-03-27 | 2024-02-09 | 日本電子株式会社 | Charged particle beam lithography device and lithography method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117578A (en) * | 1976-03-30 | 1977-10-03 | Fujitsu Ltd | Electron beam exposing method |
| JPS53120276A (en) * | 1977-03-29 | 1978-10-20 | Nec Corp | Electron beam exposure method |
| JPS55118633A (en) * | 1979-03-05 | 1980-09-11 | Fujitsu Ltd | Exposing method for electron beam |
-
1983
- 1983-05-13 JP JP58082615A patent/JPH0622197B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59208720A (en) | 1984-11-27 |
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