JPH0622207B2 - Manufacturing method of heating furnace for semiconductor manufacturing - Google Patents
Manufacturing method of heating furnace for semiconductor manufacturingInfo
- Publication number
- JPH0622207B2 JPH0622207B2 JP60131265A JP13126585A JPH0622207B2 JP H0622207 B2 JPH0622207 B2 JP H0622207B2 JP 60131265 A JP60131265 A JP 60131265A JP 13126585 A JP13126585 A JP 13126585A JP H0622207 B2 JPH0622207 B2 JP H0622207B2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- heating
- core tube
- manufacturing
- soaking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 title claims description 46
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000002791 soaking Methods 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 description 15
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910008048 Si-S Inorganic materials 0.000 description 1
- 229910006336 Si—S Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体ウェハを加熱するための半導体製造用加
熱炉の改良に関する。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to improvement of a heating furnace for semiconductor production for heating a semiconductor wafer.
半導体装置の製造において、デポジション、拡散等の加
熱工程は非常に重要な工程である。従来、こうした加熱
工程には第２図に示すような加熱炉が用いられるのが一
般的である。In manufacturing semiconductor devices, heating processes such as deposition and diffusion are very important processes. Conventionally, a heating furnace as shown in FIG. 2 is generally used for such heating process.
第２図において、円筒状の発熱体１の外周は断熱材２で
覆われ、発熱体１の中空部には均熱管３が配置されてい
る。この均熱管３はアルミナ、ムライト、炭化珪素、Ｓ
ｉ−ＳｉＣ等から形成される。更に、均熱管３の中空部
には石英ガラス製炉芯管４が配置されている。前記均熱
管３と炉芯管４との間には間隙が設けられている。In FIG. 2, the outer circumference of a cylindrical heating element 1 is covered with a heat insulating material 2, and a soaking tube 3 is arranged in the hollow portion of the heating element 1. The soaking tube 3 is made of alumina, mullite, silicon carbide, S
It is formed of i-SiC or the like. Further, a quartz glass furnace core tube 4 is arranged in the hollow portion of the soaking tube 3. A gap is provided between the soaking tube 3 and the furnace core tube 4.
上記加熱炉を用いた半導体ウェハの加熱工程は以下のよ
うにして行なわれる。すなわち、炉芯管４内に半導体ウ
ェハを装着したウェハボート（図示せず）を装入し、発
熱体１に通電することにより発生する熱を均熱管３から
炉芯管４へ均一に放射し、内部の半導体ウェハを均一に
加熱する。The heating process of the semiconductor wafer using the heating furnace is performed as follows. That is, a wafer boat (not shown) having semiconductor wafers mounted therein is loaded into the furnace core tube 4, and heat generated by energizing the heating element 1 is uniformly radiated from the soaking tube 3 to the furnace core tube 4. , Uniformly heat the semiconductor wafer inside.
しかしながら、拡散工程のように加熱温度が高く、処理
時間が長いと、石英ガラスの粘性が大幅に低下するた
め、石英ガラス製炉芯管４を高温均熱部と断面が楕円形
状に変形する。このような変形が生じると、ウェハボー
トの出し入れが困難となるうえ、炉芯管４内でガスの流
れや温度分布が不均一となり、半導体ウェハ表面での不
純物濃度にバラツキが生じる。However, when the heating temperature is high and the treatment time is long as in the diffusion step, the viscosity of the quartz glass is significantly reduced, so that the quartz glass furnace core tube 4 is deformed into an elliptical cross section with the high temperature soaking portion. When such deformation occurs, it becomes difficult to take the wafer boat in and out, and the gas flow and the temperature distribution in the furnace core tube 4 become non-uniform, which causes variations in the impurity concentration on the surface of the semiconductor wafer.
こうしたことから、最近、均熱管と炉芯管とを兼ねた高
純度のＳｉ−ＳｉＣ系プロセスチューブが使用される場
合もある。しかし、Ｓｉ−ＳｉＣ系プロセスチューブは
石英ガラス製炉芯管と比較して高価であり、しかも高純
度といわれるものでも汚染源となる不純物の含有量が多
く、半導体ウェハに影響を与えやすい。また、Ｓｉ−Ｓ
ｉＣ系プロセスチューブは高温でＣｌ２、ＨＣｌ等のガ
ス又は酸の液を流すことによって高純度処理が行なわれ
るが、長時間にわたって高純度処理を行なっても表層部
が純化されるだけであり、内部の不純物を完全に除去す
ることができない。このため、加熱処理時にプロセスチ
ューブ内部に残存している微量不純物が半導体ウェハを
汚染し、歩留りを低下させる原因となる。For this reason, recently, a high-purity Si-SiC-based process tube that doubles as a soaking tube and a furnace core tube may be used. However, the Si-SiC-based process tube is more expensive than the quartz glass furnace core tube, and even if it is said to be of high purity, it contains a large amount of impurities that become a pollution source, and is likely to affect the semiconductor wafer. In addition, Si-S
The iC-based process tube is subjected to a high-purity treatment by flowing a gas such as Cl 2 , HCl or the like or an acid solution at a high temperature. Impurities inside cannot be completely removed. For this reason, the trace impurities remaining inside the process tube during the heat treatment contaminate the semiconductor wafer and cause a reduction in yield.
本発明は上記事情を考慮してなされたものであり、安価
で長寿命であり、かつ半導体装置の歩留りを低下させる
ことのない半導体製造用加熱炉を提供しようとするもの
である。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heating furnace for semiconductor manufacturing, which is inexpensive, has a long life, and does not reduce the yield of semiconductor devices.
本発明の半導体製造用加熱炉の製造方法は、円筒状の発
熱体と、該発熱体の中空部に配置された均熱管と、該均
熱管内に配置された石英ガラス製炉芯管とを備えた半導
体製造用加熱炉を製造するにあたり、前記均熱管および
前記石英ガラス製炉芯管の少なくともいずれか一方を加
熱することにより両者を密着させることを特徴とするも
のである。The method for manufacturing a heating furnace for semiconductor production of the present invention includes a cylindrical heating element, a soaking tube arranged in the hollow portion of the heating element, and a quartz glass furnace core tube arranged in the soaking tube. In manufacturing the provided heating furnace for semiconductor production, at least one of the soaking tube and the quartz glass furnace core tube is heated to bring them into close contact with each other.
このような半導体製造用加熱炉によれば、加熱時にも石
英ガラス製炉芯管が均熱管によって外周から支持されて
いるので、炉芯管の変形が生じることがない。この結
果、ウェハボートの出し入れに影響がなく、ガスの流れ
や温度分布が不近一となることもない。したがって、安
価な石英ガラス製炉芯管の寿命を向上するとともに、半
導体装置の歩留りを向上することができる。According to such a heating furnace for semiconductor manufacturing, since the quartz glass furnace core tube is supported from the outer periphery by the soaking tube even during heating, the furnace core tube is not deformed. As a result, there is no effect on the loading and unloading of the wafer boat, and the gas flow and temperature distribution do not become intimate. Therefore, the life of an inexpensive quartz glass furnace core tube can be improved and the yield of semiconductor devices can be improved.
以下、本発明の実施例を第１図を参照して説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図において、円筒状の発熱体１１の外周は断熱材１
２で覆われている。前記発熱体１１の中空部には外径２
２５mm、内径２０５mm、長さ１９００mmのＳｉ−ＳｉＣ
質均熱管１３が配置されており、その内面には膜厚１mm
のＳｉ３Ｎ４層が形成されている。更に、均熱管１３の
中空部には外径２０３mm、内径１９６mm、長さ２９７５
mmの石英ガラス製炉芯管１４が前記均熱管１３と密着し
て装着されている。In FIG. 1, the outer circumference of the cylindrical heating element 11 is a heat insulating material 1.
It is covered with 2. The hollow portion of the heating element 11 has an outer diameter of 2
25mm, inner diameter 205mm, length 1900mm Si-SiC
A soaking tube 13 is placed, and the inner surface has a film thickness of 1 mm.
Si 3 N 4 layer is formed. Furthermore, the hollow portion of the soaking tube 13 has an outer diameter of 203 mm, an inner diameter of 196 mm, and a length of 2975.
A quartz core tube 14 made of quartz glass is attached in close contact with the soaking tube 13.
なお、第１図に示すような石英ガラス製炉芯管を均熱管
に密着させて装着した加熱炉は、従来の均熱管と石英ガ
ラス製炉芯管を用い、両者を回転させながら炉芯管の内
部からバーナーにより加熱し、遠心力を利用する方法、
あるいは炉芯管の内部を加圧しながら均熱管を加熱する
方法等により容易に得ることができる。A heating furnace in which a quartz glass furnace core tube as shown in FIG. 1 is attached in close contact with a soaking tube uses a conventional soaking tube and a quartz glass furnace core tube, and the furnace core tube is rotated while rotating both. The method of heating from the inside of the machine with a burner and using centrifugal force,
Alternatively, it can be easily obtained by a method of heating the soaking tube while pressurizing the inside of the furnace core tube.
第１図に示すような半導体製造用加熱炉によれば、半導
体ウェハの加熱時に石英ガラス製炉芯管１４が高温とな
ってその粘性が大幅に低下しても、炉芯管１４が均熱管
１３によって外周から支持されているので、炉芯管１４
の変形が生じることがない。この結果、ウェハボードの
出し入れに影響がなく、ガスの流れや温度分布が不均一
となることもない。したがって、安価で汚染源となる不
純物含有量の少ない石英ガラス製炉芯管１４の寿命を向
上するとともに、半導体装置の歩留りを向上することが
できる。According to the heating furnace for semiconductor production as shown in FIG. 1, even if the quartz glass furnace core tube 14 becomes high in temperature when the semiconductor wafer is heated and the viscosity thereof is significantly reduced, the furnace core tube 14 becomes a soaking tube. Since it is supported from the outer periphery by 13, the furnace core tube 14
Deformation does not occur. As a result, there is no effect on the loading and unloading of the wafer board, and the gas flow and temperature distribution do not become non-uniform. Therefore, it is possible to improve the life of the quartz glass furnace core tube 14 that is inexpensive and has a low content of impurities that become a pollution source, and improve the yield of semiconductor devices.
実際に上記実施例の加熱炉及び従来の加熱炉を用い、５
インチＰ型シリコンウェハを１２８０℃で加熱処理した
場合の評価試験の結果を下記表に示す。Actually, the heating furnace of the above-mentioned embodiment and the conventional heating furnace were used, and
The following table shows the results of the evaluation test when the inch P-type silicon wafer was heat-treated at 1280 ° C.
なお、下記表中比較例１は外径２３０mm、内径２０５m
m、長さ１９００mmのＳｉ−ＳｉＣ質均熱管に外径１９
０mm、内径１８３mm、長さ２９７５mmの石英ガラス炉芯
管を装着した従来の加熱炉、比較例２は外径２０５mm、
内径１９０mm、長さ２９７５mmの高純度Ｓｉ−ＳｉＣ質
プロセスチューブを用いた従来の加熱炉である。In the table below, Comparative Example 1 has an outer diameter of 230 mm and an inner diameter of 205 m.
m, 1900 mm long Si-SiC uniform heat pipe with outer diameter 19
A conventional heating furnace equipped with a 0 mm, inner diameter 183 mm, and length 2975 mm silica glass furnace core tube, Comparative Example 2 has an outer diameter of 205 mm,
It is a conventional heating furnace using a high-purity Si-SiC quality process tube having an inner diameter of 190 mm and a length of 2975 mm.
また、下記表中のＳｉＯ２膜中の可動イオン濃度（Init
ial ＮFB及び＋ＢＴΔＮFB）はシリコンウェハの不純
物による汚染度合を示すものである。ここで、Initial
ＮFBはＢＴ処理を行なう前のＮFB値、＋ＢＴΔＮFBは
正の電圧を印加してＢＴ処理を行なった場合のＮFBの変
化量をそれぞれ表わす。これらの値は膜厚５００ÅのＳ
ｉＯ２膜について測定されたものである。前記＋ＢＴ処
理は約２００℃において、５Ｖの電圧を３分間印加して
行なった。また、ライフはそれぞれ１０サンプルの平均
値である。The movable ion concentration (Init in the SiO 2 film in the following Table
ial N FB and + BTΔN FB ) indicate the degree of contamination of the silicon wafer with impurities. Where Initial
N FB represents the N FB value before the BT process, and + BTΔN FB represents the amount of change in the N FB when the positive voltage is applied and the BT process is performed. These values are S for film thickness 500Å
It was measured for an iO 2 film. The + BT treatment was performed at about 200 ° C. by applying a voltage of 5 V for 3 minutes. Further, each life is an average value of 10 samples.
上記表において、実施例及び比較例２の加熱炉を用いた
場合のＳｉＯ２膜中の可動イオン濃度を比較して明らか
なように、石英ガラス製炉芯管を備えた加熱炉ではＳｉ
−ＳｉＣ質プロレスチューブを備えた加熱炉よりもシリ
コンウェハが不純物による汚染を受けにくいことがわか
る。 As is clear from the comparison of the movable ion concentration in the SiO 2 film when the heating furnaces of Example and Comparative Example 2 are used in the above table, Si is not found in the heating furnace equipped with the quartz glass furnace core tube.
-It can be seen that the silicon wafer is less likely to be contaminated by impurities than the heating furnace equipped with the SiC quality wrestling tube.
また、実施例の加熱炉は比較例１の加熱炉よりもライフ
が長いことから、実施例の加熱炉では石英ガラス製炉芯
管の変形が抑制されていることがわかる。In addition, since the heating furnace of the example has a longer life than the heating furnace of the comparative example 1, it can be seen that the heating furnace of the example suppresses the deformation of the quartz glass furnace core tube.
なお、本発明の加熱炉において、均熱管１３の肉厚は石
英ガラス製炉芯管１４の肉厚よりも厚いことが望まし
い。これは、均熱管１３の肉厚が石英ガラス製炉芯管１
４の肉厚よりも薄い場合、加熱・放冷のサイクルを繰り
返すと両者の熱膨張係数の相違により均熱間１３にクラ
ックが発生しやすいためである。In the heating furnace of the present invention, the soaking tube 13 is preferably thicker than the quartz glass furnace core tube 14. This is because the soaking tube 13 has a thickness of the quartz glass core tube 1
This is because when the thickness is thinner than 4, the cracks are likely to occur in the soaking zone 13 due to the difference in thermal expansion coefficient between the two when the heating / cooling cycle is repeated.
また、上記実施例では均熱管１３と石英ガラス製炉芯管
１４との間にＳｉ３Ｎ４層からなる緩衝層を介在させた
が、このような緩衝層を設けることにより均熱管１３と
石英ガラス製炉芯管１４との熱による溶着及び熱膨張差
による破損を防止することができる。こうした緩衝層と
しては上記実施例におけるＳｉ３Ｎ４層のほかにＡｌ２
Ｏ３、ＢＮ、ＳｉＺｒＯ４等を用いることができる。Further, in the above embodiment, the buffer layer made of Si 3 N 4 layer is interposed between the soaking tube 13 and the quartz glass furnace core tube 14. However, by providing such a buffer layer, the soaking tube 13 and the quartz tube are provided. It is possible to prevent welding due to heat from the glass furnace core tube 14 and damage due to a difference in thermal expansion. As such a buffer layer, in addition to the Si 3 N 4 layer in the above embodiment, Al 2
O 3 , BN, SiZrO 4 or the like can be used.
更に、均熱管１３としては炭化珪素質、Ｓｉ−ＳｉＣ
質、窒化珪素質、アルミナ質等の材質のものが用いられ
るが、これらをそのまま用いる場合でも上記のように緩
衝層を設ける場合でも、石英ガラス製炉芯管１４の失透
を防止するために均熱管１３の内面の表層部を純化処理
することが望ましい。Further, the soaking tube 13 is made of silicon carbide or Si-SiC.
In order to prevent devitrification of the quartz glass furnace core tube 14, even if these materials are used as they are or when the buffer layer is provided as described above, It is desirable to purify the surface layer of the inner surface of the soaking tube 13.
以上詳述した如く本発明によれば、安価かつ長寿命であ
り、しかも半導体装置の特性を劣化させることのない半
導体製造用加熱炉を提供できるものである。As described in detail above, according to the present invention, it is possible to provide a heating furnace for semiconductor manufacturing which is inexpensive, has a long life, and does not deteriorate the characteristics of the semiconductor device.
第１図は本発明の実施例における半導体製造用加熱炉の
断面図、第２図は従来の半導体製造用加熱炉の断面図で
ある。 １１……発熱体、１２……断熱材、１３……均熱管、１
４……石英ガラス製炉芯管。FIG. 1 is a cross-sectional view of a semiconductor manufacturing heating furnace in an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a conventional semiconductor manufacturing heating furnace. 11 ... Heating element, 12 ... Insulating material, 13 ... Soaking tube, 1
4 ... Quartz glass core tube.
Claims (1)
置された均熱管と、該均熱管内に配置された石英ガラス
製炉芯管とを備えた半導体製造用加熱炉を製造するにあ
たり、前記均熱管および前記石英ガラス製炉芯管の少な
くともいずれか一方を加熱することにより両者を密着さ
せることを特徴とする半導体製造用加熱炉の製造方法。1. A heating furnace for semiconductor production, comprising a cylindrical heating element, a soaking tube arranged in a hollow portion of the heating element, and a quartz glass furnace core tube arranged in the soaking tube. In manufacturing, a method for manufacturing a heating furnace for manufacturing a semiconductor, characterized in that at least one of the soaking tube and the quartz glass furnace core tube is heated to bring them into close contact with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60131265A JPH0622207B2 (en) | 1985-06-17 | 1985-06-17 | Manufacturing method of heating furnace for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60131265A JPH0622207B2 (en) | 1985-06-17 | 1985-06-17 | Manufacturing method of heating furnace for semiconductor manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61288417A JPS61288417A (en) | 1986-12-18 |
| JPH0622207B2 true JPH0622207B2 (en) | 1994-03-23 |
Family
ID=15053882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60131265A Expired - Lifetime JPH0622207B2 (en) | 1985-06-17 | 1985-06-17 | Manufacturing method of heating furnace for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622207B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS644018A (en) * | 1987-06-26 | 1989-01-09 | Toshiba Ceramics Co | Vertical-type diffusion furnace |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143760A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Quartz tube in heat treatment furnace |
| JPS5313354A (en) * | 1976-07-22 | 1978-02-06 | Toshiba Corp | Heat treatment unit of semiconductor element |
-
1985
- 1985-06-17 JP JP60131265A patent/JPH0622207B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61288417A (en) | 1986-12-18 |
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