JPH0624192B2 - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH0624192B2 JPH0624192B2 JP6925486A JP6925486A JPH0624192B2 JP H0624192 B2 JPH0624192 B2 JP H0624192B2 JP 6925486 A JP6925486 A JP 6925486A JP 6925486 A JP6925486 A JP 6925486A JP H0624192 B2 JPH0624192 B2 JP H0624192B2
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- insulating film
- interlayer insulating
- etching method
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 6
- 238000001312 dry etching Methods 0.000 title claims 5
- 229920001721 polyimide Polymers 0.000 claims description 11
- 239000009719 polyimide resin Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体基板上に多層配線を実現した半導体装
置の製造方法に関し、特に層間膜にＳi 含有ポリイミド
樹脂を使用した場合のスルーホール形成方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor device in which multilayer wiring is realized on a semiconductor substrate, and in particular, formation of a through hole when an Si-containing polyimide resin is used for an interlayer film. Regarding the method.
従来、この種のＳi 含有ポリイシド樹脂の異方性エッチ
ングを行った例はなく、Ｓi を含まない通常のポリイミ
ド樹脂のエッチングは、Ｏ２ガスのみで行われている。Heretofore, there has been no example of anisotropic etching of this type of Si-containing polyside resin, and etching of a normal polyimide resin containing no Si is performed only with O 2 gas.
上述した従来のＯ２ガスのみでのポリイミド樹脂のエッ
チング方法で、Ｓi 含有ポリイミド樹脂をエッチングす
るとＳi 残渣が残る。When the Si-containing polyimide resin is etched by the above-described conventional method for etching a polyimide resin using only O 2 gas, an Si residue remains.
また、Ｏ２にＣを含んだフッ素ガスを混合したガスを用
いた場合、反応生成物のスルーホール側壁への再付着、
デポジションなどが起る。Further, when a gas in which fluorine gas containing C is mixed with O 2 is used, the reaction product is reattached to the side wall of the through hole,
Deposition etc. occurs.
本発明のエッチング条件は、Ｓi 残渣を除去するため、
フッ素ガスを混合し、また、再付着やデポジションをな
くすために、該フッ素系ガスをＣを含まないものを選択
し、かつパワー密度を０．６Ｗ／cm2以下で行うことを
有している。The etching condition of the present invention is to remove Si residue,
In order to mix the fluorine gas and to eliminate redeposition and deposition, the fluorine-based gas not containing C is selected, and the power density is set to 0.6 W / cm 2 or less. There is.
次に本発明について、図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図(a)に示す様に、半導体基板上に形成された酸化
膜２上のＡl 配線１の上に未硬化のＳi 含有ポリイミド
系樹脂液を塗布し、同図(b)のように、高温熱処理をし
てＳi 含有ポリイミドからなる層間絶縁膜３を形成す
る。その後、同図(c)で示すごとく、Ｔi を３０００Å
スパッタし、中間層４を形成する。その後、同図(d)の
ように、上層レジスト５をパターニングし、中間層を、
エッチングする。その後、中間層４とレジスト５をマス
クにO2+SF6 ガス６を用いて、Ｓi 入りポリイミド膜を
エッチングする。この結果、第１図(e)となる。As shown in FIG. 1 (a), an uncured Si-containing polyimide resin solution is applied on the Al wiring 1 on the oxide film 2 formed on the semiconductor substrate, and as shown in FIG. 1 (b). Then, high temperature heat treatment is performed to form an interlayer insulating film 3 made of Si-containing polyimide. After that, as shown in FIG.
Sputtering is performed to form the intermediate layer 4. After that, as shown in FIG. 3D, the upper layer resist 5 is patterned, and the intermediate layer is
Etching. Then, the Si-containing polyimide film is etched by using O 2 + SF 6 gas 6 with the intermediate layer 4 and the resist 5 as a mask. As a result, FIG. 1 (e) is obtained.
以上説明した様に、本発明は、Ｓi 含有ポリイミド樹脂
膜のリアクティブイオンエッチングを、Ｏ２とＣを含ま
ないフッ素ガスを用いて、パワー密度０．６Ｗ／cm2以
下で行うことで、Ｓi 残渣，再付着，デボジションのな
いエッチングできるという効果がある。As described above, according to the present invention, the reactive ion etching of the Si-containing polyimide resin film is performed with the fluorine gas containing no O 2 and C at the power density of 0.6 W / cm 2 or less. The effect is that etching can be performed without residue, redeposition, and devolution.
第１図(a)乃至(e)は本発明の実施例の縦断面図である。 １……Ａl 配線、２……酸化膜、３……Ｓi 含有ポリイ
ミド樹脂、４……Ｔi 膜、５……上層レジスト、６……
Ｏ2＋ＳＦ６ガス。1 (a) to 1 (e) are vertical sectional views of an embodiment of the present invention. 1 ... Al wiring, 2 ... oxide film, 3 ... Si-containing polyimide resin, 4 ... Ti film, 5 ... upper layer resist, 6 ...
O 2 + SF 6 gas.
Claims (2)
硬化のＳi 含有ポリイミド系樹脂液を塗布し、高温加熱
処理してポリイミドからなる層間絶縁膜を形成し、この
絶縁膜を選択的にドライエッチングする際に、該層間絶
縁膜上に薄い金属膜（例えばＡl,Ｔi ）を形成し、これ
をマスクに該層間絶縁膜を炭素(Ｃ)を含まないフッ素系
ガスとＯ２を混合したガスを用いて、エッチングするこ
とを特徴とするドライエッチング方法。1. An uncured Si-containing polyimide resin solution is applied onto a semiconductor substrate on which a wiring conductive layer is formed and heat-treated at high temperature to form an interlayer insulating film made of polyimide, and this insulating film is selectively formed. During dry etching, a thin metal film (eg, Al, Ti) is formed on the interlayer insulating film, and the interlayer insulating film is mixed with a fluorine-based gas containing no carbon (C) and O 2 using this as a mask. A dry etching method, characterized in that etching is performed by using the above-mentioned gas.
チング方法において、該層間絶縁膜のリアクティブイオ
ンエッチングをする際に、１３，５６ＭＨz の高周波を
０．６Ｗ／cm2以下のパワー密度で、カソード側に印加
することを特徴とするドライエッチング方法。2. The dry etching method according to claim 1, wherein a reactive ion etching of the interlayer insulating film is performed by applying a high frequency of 13,56 MHz to a power of 0.6 W / cm 2 or less. A dry etching method characterized in that the density is applied to the cathode side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6925486A JPH0624192B2 (en) | 1986-03-26 | 1986-03-26 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6925486A JPH0624192B2 (en) | 1986-03-26 | 1986-03-26 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62224027A JPS62224027A (en) | 1987-10-02 |
| JPH0624192B2 true JPH0624192B2 (en) | 1994-03-30 |
Family
ID=13397407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6925486A Expired - Fee Related JPH0624192B2 (en) | 1986-03-26 | 1986-03-26 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0624192B2 (en) |
-
1986
- 1986-03-26 JP JP6925486A patent/JPH0624192B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62224027A (en) | 1987-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |