JPH0626188B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPH0626188B2 JPH0626188B2 JP24001587A JP24001587A JPH0626188B2 JP H0626188 B2 JPH0626188 B2 JP H0626188B2 JP 24001587 A JP24001587 A JP 24001587A JP 24001587 A JP24001587 A JP 24001587A JP H0626188 B2 JPH0626188 B2 JP H0626188B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- phase growth
- nozzle tubes
- wafer
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、気相成長装置に関し、特に、縦型の反応管内
に多数枚のウェーハを成長面をほぼ水平にして、一定の
間隔をもたせて設置する気相成長装置に関する。Description: FIELD OF THE INVENTION The present invention relates to a vapor phase growth apparatus, and more particularly, to forming a large number of wafers in a vertical reaction tube with their growth surfaces substantially horizontal and at regular intervals. Vapor deposition apparatus to be installed.
従来、この種の気相成長装置は第３図(a),(b)に示すよ
うに、ウェーハ３近傍に垂直にたてられたノズル管１
４，１５のガス放出細孔１６はいずれもウェーハ３方向
を向いている。ガスはこの細孔１６より放出されてウェ
ーハ３に到達するまでに相互に混合されて、ウェーハ３
面上で、成膜反応が起るようになっている。Conventionally, as shown in FIGS. 3 (a) and 3 (b), this type of vapor phase growth apparatus has a nozzle tube 1 vertically erected near the wafer 3.
The gas release pores 16 of 4 and 15 are all directed toward the wafer 3. The gas is discharged from the pores 16 and mixed with each other before reaching the wafer 3,
The film-forming reaction occurs on the surface.
上述した従来の気相成長装置はノズル管１４とウェーハ
３との距離が短いために、ノズル管１４の細孔１６から
放出されるガスが十分に混合されずにウェーハ３の表面
に到達するため、膜厚や種々と特性が不均一になる欠点
がある。In the conventional vapor phase growth apparatus described above, since the distance between the nozzle tube 14 and the wafer 3 is short, the gas emitted from the pores 16 of the nozzle tube 14 reaches the surface of the wafer 3 without being sufficiently mixed. However, there is a drawback that the characteristics such as the film thickness and various other factors become uneven.
〔問題点を解決するための手段〕 本発明の気相成長装置は、縦型の反応管内に複数枚の被
成長基板を任意の間隔でほぼ水平に積み重ねるように設
置し、被成長基板近傍にほぼ垂直に立てて設置した複数
本のノズル管を有し、複数のノズル管が被成長基板より
近い位置と遠い位置とに設置された２群のノズル管より
なる気相成長装置において、２群のノズル管のうち一群
のノズル管にあけられたガス放出用の複数個の細孔と他
の群のノズル管にあけられたガス放出用の複数個の細孔
が相互に対向している。[Means for Solving the Problems] The vapor phase growth apparatus of the present invention is installed in a vertical reaction tube so that a plurality of growth substrates are stacked substantially horizontally at arbitrary intervals, and the growth substrates are placed near the growth substrate. In a vapor phase growth apparatus having a plurality of nozzle tubes installed upright substantially vertically, the plurality of nozzle tubes being installed at a position closer to and farther from the substrate to be grown, Of the nozzle tubes, a plurality of gas discharging holes formed in one group of nozzle tubes and a plurality of gas discharging holes formed in another group of nozzle tubes face each other.
このように、縦型の反応管内に任意の間隔でウェーハを
ほぼ水平に積み重ねて設置する方式によるもので、ウェ
ーハ近傍に複数本のノズル管を垂直に立てて設置し、当
該ノズル管がウェーハから近い距離に位置する一群と、
遠い距離に位置する一群からなり、そして、近い群のノ
ズル管のガス放出細孔からガスがウェーハとは反対方向
に吐出し遠い群のノズル管の細孔からのガスがウェーハ
方向に吐出するように、それぞれの群のノズル管のガス
放出細孔が相互に対向してあけられている構造になって
いる。In this way, by vertically stacking the wafers in the vertical reaction tube at an arbitrary interval and stacking them almost horizontally, a plurality of nozzle tubes are installed vertically in the vicinity of the wafer, and the nozzle tubes A group located at a close distance,
It consists of a group located at a distant distance, and gas is discharged from the gas discharge pores of the nozzle tube of the near group in the direction opposite to the wafer, and gas from the pores of the nozzle tube of the distant group is discharged toward the wafer. In addition, the gas discharge pores of the nozzle tubes of each group are formed so as to face each other.
このような構造により、ウェーハの近くに位置したノズ
ル管の細孔から吐出したガスとウェーハから遠くに位置
したノズル管の細孔から吐出したガスは相互に衝突する
ことになりガスの混合は十分に行なうことができる。ま
た、混合後のガス流方向を遠い位置のノズル管からのガ
ス流量を多くすることによって、ウェーハ成長面にほぼ
平行にすることができ、ウェーハ間にガスを十分に挿入
することができ、成長速度を大きく保持して均質な成長
膜を得ることができる。With this structure, the gas discharged from the pores of the nozzle tube located near the wafer and the gas discharged from the pores of the nozzle tube located far from the wafer collide with each other, and the gas mixing is sufficient. Can be done In addition, by increasing the gas flow rate from the nozzle tube at a distant position in the gas flow direction after mixing, the gas flow direction can be made substantially parallel to the wafer growth surface, and the gas can be sufficiently inserted between the wafers to grow. A large growth film can be obtained by keeping the speed large.
次に、本発明について、図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図(a),(b)はそれぞれ本発明の一実施例の気相成長
装置の縦断面図及び横断面図てあり、シリコンエピタキ
シャル成長を実施するためのものである。反応管は外管
１と内管２の２重管構造になっている。直径１５０mmの
ウェーハ３はウェーハボート４に表面がほぼ水平になる
ように約５mmの間隔で５０枚セットされた。FIGS. 1 (a) and 1 (b) are a longitudinal sectional view and a lateral sectional view, respectively, of a vapor phase growth apparatus according to an embodiment of the present invention for carrying out silicon epitaxial growth. The reaction tube has a double tube structure of an outer tube 1 and an inner tube 2. Fifty wafers 3 having a diameter of 150 mm were set on the wafer boat 4 at intervals of about 5 mm so that the surface thereof was substantially horizontal.
本実施例に係るノズル管については、多数の細孔１６を
側面に有するノズル管５を同様に細孔１６を有するノズ
ル管６よりもウェーハ３に近い位置に設置し、第１図
(b)の横断面図に示すようにノズル管５と６が反応管の
中心線上に並ぶようにして、ノズル管５と６の細孔は対
向するようにあけられそれぞれの細孔から吐出したガス
の方向が正反対で相互に衝突するようになっている。With respect to the nozzle tube according to the present embodiment, the nozzle tube 5 having a large number of pores 16 on its side surface is similarly installed at a position closer to the wafer 3 than the nozzle tube 6 having the pores 16 is,
As shown in the cross-sectional view of (b), the nozzle tubes 5 and 6 are aligned on the center line of the reaction tube, and the pores of the nozzle tubes 5 and 6 are opened so as to face each other and discharged from the respective pores. The gas directions are opposite to each other and collide with each other.
なお、ガスの排気は排気口７を通して真空ポンプによっ
て減圧状態で出来るようになっている。The gas can be exhausted through the exhaust port 7 by a vacuum pump in a reduced pressure state.
以下にこの気相成長装置を用いたシリコンエピタキシャ
ル成長実験の一例を示す。電気炉加熱によって、反応管
内のウェーハ３を１１００℃とした。次にノズル管５よ
り反応ガスのＳｉＨ２Ｃｌ２を０．５／min、Ｈ２を
５／min、ｐＨ３を０．０５／min、流し、一方、ノ
ズル管６より、Ｈ２を５０／minの流量で流した。こ
の結果、ノズル管５の細孔から吐出したＨ２，ＳｉＨ２
Ｃｌ２、ｐＨ３の混合ガスはノズル管６の細孔から出た
Ｈ２ガスと正面衝突して嵌合され、ウェーハ３間に均一
に混合され、拡大したガス流として供給され均一性の良
いエピタキシャル成長が起った。本実施例の実験におい
て５０枚すべてのウェーハに対して、ウェーハ間及びウ
ェーハ内の膜厚分布を±３％以内に抑えることができ、
また電気抵抗分布も±３％以内であった。An example of a silicon epitaxial growth experiment using this vapor phase growth apparatus is shown below. The wafer 3 in the reaction tube was heated to 1100 ° C. by heating in an electric furnace. Next, the reaction gas SiH 2 Cl 2 of 0.5 / min, H 2 of 5 / min, and pH 3 of 0.05 / min were flown from the nozzle tube 5, while H 2 of 50 / min was flown from the nozzle tube 6. Flowed at a flow rate of min. As a result, H 2 , SiH 2 discharged from the pores of the nozzle tube 5
The mixed gas of Cl 2 and pH 3 is fitted into the H 2 gas discharged from the pores of the nozzle tube 6 by head-on collision, is uniformly mixed between the wafers 3, and is supplied as an expanded gas flow with good uniformity. Epitaxial growth has occurred. In the experiment of this example, the film thickness distribution between wafers and within the wafer can be suppressed within ± 3% for all 50 wafers,
The electric resistance distribution was also within ± 3%.
第２図は本発明の他の実施例の気相成長装置の横断面図
を示したものであり、その縦断面図は第１図(a)と同じ
である。本実施例は同心円の中心に配置されたウェーハ
３に近いノズル管として、８，９，１０の３本、ウェー
ハより遠いノズル管として１１，１２，１３の３本を異
なる２本の同心円上に配置し、細孔は８と１１，９と１
２，１０と１３がそれぞれ対向しており、ガスは吐出後
相互に衝突する。FIG. 2 is a transverse sectional view of a vapor phase growth apparatus according to another embodiment of the present invention, the longitudinal sectional view of which is the same as FIG. 1 (a). In this embodiment, the nozzle tubes near the wafer 3 arranged in the center of the concentric circle are 3, 8, 9 and 10, and the nozzle tubes farther from the wafer are 11, 12, 13 on the two different concentric circles. The pores are 8 and 11, 9 and 1
Nos. 2, 10 and 13 face each other, and the gases collide with each other after being discharged.
多数本のノズル管による広い範囲でのガスの供給と混合
がなされるため、極めて均一な成膜が可能になった。Since gas is supplied and mixed in a wide range by a large number of nozzle tubes, extremely uniform film formation is possible.
前述した実施例と同様にシリコンエピタキシャル成長に
ついて実施した例を示す。ノズル管８乃至１３はぞれぞ
れ独立したマスフローコントローラで流量が制御できる
ようになっている。ノズル管８，９，１０のそれぞれに
ＳｉＨ２Ｃｌ２０．２／min、ｐＨ３０．０５／mi
n、Ｈ２２／minを流した。またノズル管１１，１２，
１３よりそれぞれＨ２を２０／minを流して成長温度
１１００℃で成長した。ウェハ３内及びウェハ３間の膜
厚分布及び電気抵抗分布を±２％以内に抑えることがで
きた。An example in which the silicon epitaxial growth is carried out in the same manner as the above-mentioned embodiment will be shown. The flow rate of each of the nozzle tubes 8 to 13 can be controlled by an independent mass flow controller. SiH 2 Cl 2 0.2 / min, pH 3 0.05 / mi in each of the nozzle tubes 8, 9 and 10.
n, it was flushed with H 2 2 / min. Also, the nozzle tubes 11, 12,
From H.13, H 2 was flowed at 20 / min to grow at a growth temperature of 1100 ° C. The film thickness distribution and the electrical resistance distribution within the wafer 3 and between the wafers 3 could be suppressed within ± 2%.
以上２つの実施例を示したが、同様の実験を第３図に示
したような従来装置で実験した結果、膜厚分布、電気抵
抗分布がいずれも±５％以上と悪く、本発明による効果
は顕著である。Two examples have been shown above. As a result of conducting the same experiment with the conventional apparatus as shown in FIG. 3, both the film thickness distribution and the electric resistance distribution are poor at ± 5% or more, and the effect of the present invention is obtained. Is remarkable.
以上説明したように、本発明は多数枚のウェーハを成長
面がほぼ水平に積み重ねられるように設置し、ウェーハ
近傍にほぼ垂直に設置されたガス供給用の複数本のノズ
ル管を有する縦型気相成長装置において、ノズル管をウ
ェーハから近い位置と遠い位置に配置し、それぞれのノ
ズル管の細孔が向い合ってつけられ、放出ガスが相互に
衝突するようにしたものである。このようにすることに
よって、各ガス流の混合が均一になり、かつまたガス流
が広い範囲に拡大してウェーハ間に入るようにすること
ができ、ウェーハ間及びウェーハ内で成膜の均一性を著
しく上げる効果がある。As described above, according to the present invention, a large number of wafers are installed so that their growth surfaces are stacked substantially horizontally, and a vertical gas type having a plurality of nozzle tubes for gas supply is installed almost vertically near the wafers. In the phase growth apparatus, the nozzle tubes are arranged at positions near and far from the wafer, and the pores of the nozzle tubes are attached facing each other so that the emitted gases collide with each other. By doing so, the mixing of each gas flow can be made uniform, and the gas flow can be expanded to a wide range so as to enter between the wafers. Has the effect of significantly increasing
また、以上はシリコンエピタキシャル成長を例に説明し
てきたが、各種の酸化膜、窒化膜、ポリシリコン膜、ア
モルファスシリコン膜などの成膜にも適用できるもので
あり、その応用価値はきわめて大きい。Further, although silicon epitaxial growth has been described above as an example, it can be applied to the formation of various oxide films, nitride films, polysilicon films, amorphous silicon films, etc., and its application value is extremely large.
【図面の簡単な説明】 第１図(a)は本発明の一実施例の気相成長装置の縦断面
図、第１図(b)は第１図(a)の横断面図、第２図は本発明
による他の実施例の気相成長装置の横断面図、第３図
(a)は従来の気相成長装置の縦断面図、第３図(b)は第３
図(a)の横断面図である。 １……反応管（外管）、２……反応管（内管）、３……
ウェーハ、４……ウェーハボート、５，６，８，９，１
０，１１，１２，１３，１４，１５……ガス供給用ノズ
ル管、７……排気口、１６……ガス放出細孔。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 (a) is a vertical sectional view of a vapor phase growth apparatus according to an embodiment of the present invention, FIG. 1 (b) is a horizontal sectional view of FIG. 1 (a), and FIG. FIG. 3 is a cross-sectional view of a vapor phase growth apparatus according to another embodiment of the present invention, FIG.
(a) is a vertical cross-sectional view of a conventional vapor phase growth apparatus, and FIG.
It is a cross-sectional view of FIG. 1 ... Reaction tube (outer tube), 2 ... Reaction tube (inner tube), 3 ...
Wafer, 4 ... Wafer boat, 5, 6, 8, 9, 1
0, 11, 12, 13, 14, 15 ... Nozzle tube for gas supply, 7 ... Exhaust port, 16 ... Gas discharge pores.
Claims (1)
意の間隔でほぼ水平に積み重ねるように設置し、前記被
成長基板近傍にほぼ垂直に立てて設置した複数本のノズ
ル管を有し、該複数のノズル管が前記被成長基板により
近い位置と遠い位置とに設置された２群のノズル管より
なる気相成長装置において、該２群のノズル管のうち一
群のノズル管にあけられたガス放出用の複数個の細孔と
他の群のノズル管にあけられたガス放出用の複数個の細
孔が相互に対向していることを特徴とする気相成長装
置。1. A vertical reaction tube is provided with a plurality of substrates to be grown so as to be stacked substantially horizontally at arbitrary intervals, and a plurality of nozzle tubes installed vertically upright in the vicinity of the substrates to be grown. A vapor phase growth apparatus comprising two groups of nozzle tubes, wherein the plurality of nozzle tubes are installed at positions closer to and farther from the substrate to be grown. A vapor-phase growth apparatus, characterized in that a plurality of holes for releasing a gas and a plurality of holes for releasing a gas opened in another group of nozzle tubes face each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24001587A JPH0626188B2 (en) | 1987-09-24 | 1987-09-24 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24001587A JPH0626188B2 (en) | 1987-09-24 | 1987-09-24 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6481311A JPS6481311A (en) | 1989-03-27 |
| JPH0626188B2 true JPH0626188B2 (en) | 1994-04-06 |
Family
ID=17053193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24001587A Expired - Lifetime JPH0626188B2 (en) | 1987-09-24 | 1987-09-24 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0626188B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335396B2 (en) | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
| US7344755B2 (en) | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
| US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
| US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
| US7282239B2 (en) | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
| US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
| KR101025323B1 (en) * | 2004-01-13 | 2011-03-29 | 가부시키가이샤 아루박 | Etching Apparatus and Etching Method |
| US20050287806A1 (en) | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
| US7966969B2 (en) * | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
| US7629256B2 (en) | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
| CN102763193B (en) | 2010-02-26 | 2016-05-11 | 株式会社日立国际电气 | The manufacture method of semiconductor devices and substrate manufacture method and lining processor |
| JP2014099427A (en) * | 2011-03-08 | 2014-05-29 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and process of manufacturing substrate |
-
1987
- 1987-09-24 JP JP24001587A patent/JPH0626188B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6481311A (en) | 1989-03-27 |
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