JPH0627335B2 - Photochemical vapor deposition equipment - Google Patents
Photochemical vapor deposition equipmentInfo
- Publication number
- JPH0627335B2 JPH0627335B2 JP61254313A JP25431386A JPH0627335B2 JP H0627335 B2 JPH0627335 B2 JP H0627335B2 JP 61254313 A JP61254313 A JP 61254313A JP 25431386 A JP25431386 A JP 25431386A JP H0627335 B2 JPH0627335 B2 JP H0627335B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- reaction
- reaction gas
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007740 vapor deposition Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 55
- 239000007789 gas Substances 0.000 claims description 46
- 239000012495 reaction gas Substances 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 238000010521 absorption reaction Methods 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 14
- 229910052753 mercury Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000003085 diluting agent Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光化学気相成長装置、特に紫外光を照射するこ
とによって反応ガスを励起し、化学反応を促進させ膜を
成長させる光化学気相成長装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a photochemical vapor deposition apparatus, in particular, photochemical vapor deposition in which a reaction gas is excited by irradiation with ultraviolet light to promote a chemical reaction to grow a film. It relates to the device.
光化学気相成長法は紫外光により反応ガスの分解が促進
されることから、膜形成の低温化のために必須の技術で
ある。The photochemical vapor deposition method is an essential technique for lowering the temperature of film formation because the decomposition of the reaction gas is accelerated by ultraviolet light.
この光化学気相成長法には反応ガスを分解する上で種々
の手法が知られており、例えば１９８１年Internationa
l Electran Device Meeting tech.digest の２４０頁に
記載された如く、低水銀灯から発光される253.7ｎｍの
紫外光を水銀蒸気を含む反応ガスに照射し、先ず水銀原
子を励起し、次に励起水銀原子によって反応ガス分子を
励起し膜形成を行う方法、あるいはJap.J. Applied Phy
sics Letterの第２２巻（１９８３年）７９２頁に記載
された如く、低圧水銀灯から発光される184.9ｎｍの光
によって直接的に反応ガス分子を励起し膜形成を行う方
法、あるいはAppl.phys.Lett.の第４０巻（１９８２
年）716 頁に記載された如く、ArF エキシマレーザから
放射される193ｎｍの光によって直接的に反応ガス分子
を励起し膜形成を行う方法などがある。Various methods are known in this photochemical vapor deposition method for decomposing the reaction gas, for example, 1981 Internationa.
l As described on page 240 of Electran Device Meeting tech.digest, the reaction gas containing mercury vapor is irradiated with 253.7 nm ultraviolet light emitted from a low-mercury lamp to excite mercury atoms first, and then excite mercury atoms. Excitation of reactive gas molecules to form a film, or Jap. J. Applied Phy
sics Letter, Vol. 22, 1983, p. 792, as described in Appl. phys. Lett, by directly exciting reactive gas molecules with 184.9 nm light emitted from a low-pressure mercury lamp to form a film. Volume 40 of. (1982
As described on page 716, there is a method of directly exciting reactive gas molecules with a light of 193 nm emitted from an ArF excimer laser to form a film.
上述した従来の光化学気相成長法において使用される装
置は、反応室の壁部に設けられたガス導入口から反応ガ
スおよび希釈ガスを導入し、反応室内をほぼ一様の圧力
（数Torr程度）とした状態で光を照射する構造となって
いる。このため紫外光光源と膜形成をおこすべき基板と
の空間にある反応ガスにより紫外光が吸収され、基板近
傍での紫外光強度は減衰し、その結果膜成長速度が小さ
くなるという欠点がある。さらに、従来の光化学気相成
長装置では、反応ガスおよび希釈ガスが形成するガス流
の制御が難しく、反応室内に反応ガスの停滞する領域が
形成されてしまう。ガスの停滞する領域では膜特性を劣
化させる原因となる反応副生成物が活発に生成され、こ
れが基板表面に堆積するため、高品質な膜形成が出来な
いという欠点がある。The apparatus used in the conventional photochemical vapor deposition method described above introduces a reaction gas and a diluent gas from a gas inlet provided in the wall of the reaction chamber, and the reaction chamber has a substantially uniform pressure (about several Torr). ) Has a structure that irradiates light. Therefore, the reaction gas in the space between the ultraviolet light source and the substrate on which the film is to be formed absorbs the ultraviolet light, and the intensity of the ultraviolet light in the vicinity of the substrate is attenuated. As a result, the film growth rate becomes low. Further, in the conventional photochemical vapor deposition apparatus, it is difficult to control the gas flow formed by the reaction gas and the diluent gas, and an area where the reaction gas is stagnant is formed in the reaction chamber. In a region where gas is stagnant, a reaction by-product that causes deterioration of film characteristics is actively generated and deposited on the substrate surface, so that there is a drawback that a high quality film cannot be formed.
前記目的を達成するため、本発明に係る光化学気相成長
装置は、反応室と、基板載置部と、光源と、ガス供給部
と、反応ガス供給系とを有し、光照射により反応ガスを
励起して、その化学反応を促進させ基板の成長面に膜を
成長させる光化学化相成長装置であって、 反応室は、内部に基板載置部を収納するものであり、 基板載置部は、基板を支持するものであり、 光源は、反応室外から基板載置部上の基板の成長面に光
照射を行うものであり、 ガス供給部は、光源と基板載置部との間に、反応ガスと
反応せずしかも光源よりの光の吸収係数が小さいガスを
供給するものであり、 反応ガス供給系は、基板載置部上の成長面に反応ガスを
供給するものであり、複数のガス噴出口を有し、 複数のガス噴出口は、基板載置部上の基板成長面の真上
に配置され、該基板成長面に向けて反応ガスを高速噴出
するものである。In order to achieve the above-mentioned object, the photochemical vapor deposition apparatus according to the present invention has a reaction chamber, a substrate mounting part, a light source, a gas supply part, and a reaction gas supply system, and the reaction gas is irradiated by light irradiation. Is a photochemical chemical phase growth apparatus for exciting a chemical reaction to accelerate the chemical reaction to grow a film on the growth surface of the substrate, and the reaction chamber accommodates the substrate mounting part inside. Is for supporting the substrate, the light source is for irradiating the growth surface of the substrate on the substrate mounting portion with light from outside the reaction chamber, and the gas supply portion is between the light source and the substrate mounting portion. , A gas that does not react with the reaction gas and has a small absorption coefficient of light from the light source, and the reaction gas supply system supplies the reaction gas to the growth surface on the substrate mounting part. The gas outlets are located above the substrate growth surface on the substrate platform. It is arranged, in which the reaction gas is fast ejected toward the substrate growth surface.
基板表面に材料ガスを高速に噴出させるため、常に新し
い反応ガスを基板に供給できることから、反応室内の反
応ガスの停滞により生成す反応副生成物の堆積も防止で
きるため、良質の膜が形成できる。Since the material gas is ejected onto the surface of the substrate at a high speed, a new reaction gas can be constantly supplied to the substrate. Therefore, the deposition of reaction by-products generated due to the stagnation of the reaction gas in the reaction chamber can also be prevented, and a high quality film can be formed. .
また、基板載置部及び反応ガス噴出口と光源との間が反
応ガスで充満することなく、光源より照射される光の吸
収係数が小さいガスが主に存在するため、反応ガスによ
る紫外光吸収を低減でき、また噴出ノズルにより基板に
集中的に反応ガスを供給できるため膜成長速度を高める
ことができる。In addition, the space between the substrate mounting part and the reaction gas outlet and the light source is not filled with the reaction gas, and there is mainly a gas with a small absorption coefficient of the light emitted from the light source. And the reactive gas can be concentratedly supplied to the substrate by the jet nozzle, so that the film growth rate can be increased.
次に本発明を図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例の断面図である。反応室
１０２の左右上端近傍に希釈ガス導入口１１０がそれぞ
れ設けられ、反応室１０２の最上部には、合成石英から
なる光照射窓１０３により分離された光源室１０１を設
ける。この光源室１０１内には低圧水銀灯１０４と、そ
の上部に反射板１０５が設けられる。反応室１０２内の
下部には基板１０６とこの基板１０６を加熱するヒータ
１０７が設けられる。反応室１０２の最下部には、排気
部１１１を設ける。反応ガス噴出ノズル108,109はその
噴出口が基板１０６近傍となるように設けられる。この
反応ガス噴出ノズル１０８，１０９は、断面が円型の管
を用いても、あるいは箱型の管を用いても選択は自由で
ある。噴出ノズル108,109は、反応ガスを基板１０６の
表面に高速で噴出するために、噴出口を細く絞ったり噴
出口に小さい穴を多数設けたり、あるいは狭いスリット
状の穴を設けるのが好ましい。FIG. 1 is a sectional view of the first embodiment of the present invention. Dilution gas inlets 110 are provided near the upper left and right ends of the reaction chamber 102, and a light source chamber 101 separated by a light irradiation window 103 made of synthetic quartz is provided at the top of the reaction chamber 102. In the light source chamber 101, a low pressure mercury lamp 104 and a reflecting plate 105 are provided above the low pressure mercury lamp 104. A substrate 106 and a heater 107 for heating the substrate 106 are provided in the lower part of the reaction chamber 102. An exhaust unit 111 is provided at the bottom of the reaction chamber 102. The reactive gas ejection nozzles 108 and 109 are provided so that the ejection ports thereof are near the substrate 106. The reaction gas ejection nozzles 108 and 109 can be selected freely even if a tube having a circular cross section or a box tube is used. In order to eject the reaction gas onto the surface of the substrate 106 at high speed, it is preferable that the ejection nozzles 108 and 109 have a narrow outlet, a large number of small holes, or a narrow slit-like hole.
本装置を用いて常圧下で高品質なシリコン酸化膜を形成
する場合を例にとり膜形成の手順を説明する。反応ガス
としてモノシラン（SiH4）を５cc／min、酸素（O2）を
１００cc／minを反応ガス噴出ノズル108,109からそれぞ
れ導入する。同時に、希釈ガスとしてアルゴン（Ar）を
５０００cc／min希釈ガス導入口１１０から導入する。
反応室に導入されたこれらガスは、排気部１１１から排
出され、反応室１０２内が常圧に保たれる。基板１０６
及び反応ガス噴出ノズル１０９と低圧水銀灯１０４との
間は、紫外光の吸収の少ないＡr が主に存在し、反応ガ
スはほとんど存在しないため、基板近傍においても紫外
線強度はほとんど減衰しない。この時、基板１０６の温
度はヒーター１０７により２５０℃に保たれ、また、低
圧水銀灯１０４により波長185ｎｍの紫外光が、基板１
０６の表面に垂直に照射され、膜が堆積される。The film forming procedure will be described by taking the case of forming a high quality silicon oxide film under normal pressure using this apparatus as an example. 5 cc / min of monosilane (SiH 4 ) and 100 cc / min of oxygen (O 2 ) are introduced as reaction gases from the reaction gas ejection nozzles 108 and 109, respectively. At the same time, argon (Ar) as a diluent gas is introduced from the 5000 cc / min diluent gas inlet 110.
These gases introduced into the reaction chamber are exhausted from the exhaust unit 111 and the inside of the reaction chamber 102 is maintained at normal pressure. Board 106
Also, since Ar, which absorbs a small amount of ultraviolet light, is mainly present between the reactive gas ejection nozzle 109 and the low-pressure mercury lamp 104, and the reactive gas is scarcely present, the ultraviolet intensity is hardly attenuated even in the vicinity of the substrate. At this time, the temperature of the substrate 106 is kept at 250 ° C. by the heater 107, and ultraviolet light having a wavelength of 185 nm is emitted by the low-pressure mercury lamp 104.
The surface of 06 is illuminated perpendicularly and a film is deposited.
上記の条件でシリコン酸化膜成長を行うと、成長速度は
約80ｎｍ／minと従来の光化学気相成長装置を用いた場
合に比べ約５倍大きい値が得られた。また、形成された
シリコン酸化膜のバッファードフッ酸によるエッチング
速度は約40ｎｍ／min、ピンホール密度は約０．１個／c
m2であり、いずれの値も従来の光化学気相成長法により
形成したシリコン酸化膜に比べ小さい値でありよりち密
な膜が形成できている。When the silicon oxide film was grown under the above conditions, the growth rate was about 80 nm / min, which was about 5 times as large as that when the conventional photochemical vapor deposition apparatus was used. The etching rate of the formed silicon oxide film by buffered hydrofluoric acid is about 40 nm / min, and the pinhole density is about 0.1 holes / c.
m 2 and both values are smaller than the silicon oxide film formed by the conventional photochemical vapor deposition method, and a denser film can be formed.
本実施例では常圧下における膜成長について述べたが、
排気部１１１から真空排気し反応室102 内を減圧するこ
とによっても、反応ガスを基板表面に噴出することで高
品質な膜を高速成長することができる。また、本実施例
で述べたシリコン酸化膜成長のように２種類の反応ガス
を用いて膜形成する場合、それぞれの反応ガスについて
反応ガス、導入ノズルを別々にし、例えばノズル１０８
からはモノシランを、ノズル１０９からは酸素を導入す
れば、反応ガス導入ノズル内での反応ガスの気相成長を
低減できるため、より高品質な膜が形成できる。さら
に、これら反応ガス導入ノズル108,109をそれぞれ複数
本用意し、各ノズルから単一のガスを噴出させ、基板１
０６表面でガスを混合しても良い結果を得る。In this example, the film growth under normal pressure was described.
Also by evacuating the exhaust chamber 111 to reduce the pressure in the reaction chamber 102, a high-quality film can be grown at high speed by ejecting the reaction gas onto the substrate surface. Further, in the case of forming a film by using two kinds of reaction gases as in the silicon oxide film growth described in the present embodiment, the reaction gas and the introduction nozzle for each reaction gas are made different, and for example, the nozzle 108 is used.
Introducing monosilane and oxygen from the nozzle 109 can reduce the vapor phase growth of the reaction gas in the reaction gas introduction nozzle, so that a higher quality film can be formed. Further, a plurality of these reaction gas introduction nozzles 108 and 109 are prepared respectively, and a single gas is ejected from each nozzle so that the substrate 1
Mixing the gas at the 06 surface gives good results.
第２図は本発明の第２の実施例の断面図である。反応室
１０２の上端近傍に一つの希釈ガス導入口１１０が設け
られ、反応室１０２の最上部には合成石英から成る光照
射窓１０３により分離された光源室１０１を設ける。こ
の光源室１０１内には低圧水銀灯１０４が設けられる。
反応室１０２の最下部には排気部１１１を設ける。反応
室１０２内の下部には基板加熱用のヒータ１０７を内蔵
した基板支持台２０７が設けられ、この基板支持台２０
７上に基板１０６が設置される。反応ガス噴出管２０８
は基板１０６の表面上方に基板表面と平行に設置され、
基板１０６に対向する側の反応ガス噴出管２０８の管壁
にガス噴出口２０９が設けられ、反応ガスが基板１０６
表面へ垂直に噴出される。ガス噴出口２０９は、円型の
小穴が複数設けられても、あるいはスリット状の穴が複
数設けられても良く、その選択は自由である。FIG. 2 is a sectional view of the second embodiment of the present invention. One dilution gas inlet 110 is provided near the upper end of the reaction chamber 102, and a light source chamber 101 separated by a light irradiation window 103 made of synthetic quartz is provided at the top of the reaction chamber 102. A low pressure mercury lamp 104 is provided in the light source chamber 101.
An exhaust unit 111 is provided at the bottom of the reaction chamber 102. A substrate support 207 having a built-in heater 107 for heating the substrate is provided in the lower part of the reaction chamber 102.
The substrate 106 is installed on the substrate 7. Reactant gas ejection pipe 208
Is installed above the surface of the substrate 106 in parallel with the surface of the substrate,
A gas ejection port 209 is provided on the tube wall of the reaction gas ejection pipe 208 on the side facing the substrate 106, and the reaction gas is supplied to the substrate 106.
Ejects perpendicular to the surface. The gas ejection port 209 may be provided with a plurality of circular small holes or a plurality of slit-shaped holes, and the selection thereof is free.
本装置を用いて減圧下でシリコン窒化膜を形成する場合
を例にとり、膜形成の手順を述べる。反応ガスとしてモ
ノシラン（SiH4）とアンモニア（NH3）とを体積比１：
５の混合ガスとして、反応ガス噴出管２０８に導入しガ
ス噴出口２０９より基板１０６の表面に垂直に噴出す
る。また、希釈ガスとしてアルゴン（Ar）を希釈ガス導
入口１１０より反応ガスと同程度導入する。排気部１１
１を通して真空排気系によりガスを排気し、反応室内を
減圧状態に保つ。この時に、基板１０６の温度はヒータ
１０７により約２００℃に保たれ、また、低圧水銀灯１
０４により波長185ｎｍ、光強度10mＷ／cm2の紫外光が
照射される。The procedure of film formation will be described by taking the case of forming a silicon nitride film under reduced pressure using this apparatus as an example. Volume ratio of monosilane (SiH 4 ) and ammonia (NH 3 ) as reaction gas is 1:
The mixed gas of No. 5 is introduced into the reaction gas ejection pipe 208 and ejected perpendicularly to the surface of the substrate 106 from the gas ejection port 209. Argon (Ar) is introduced as a diluent gas through the diluent gas inlet 110 to the same extent as the reaction gas. Exhaust part 11
The gas is exhausted through the vacuum evacuation system through 1 to keep the inside of the reaction chamber under reduced pressure. At this time, the temperature of the substrate 106 is maintained at about 200 ° C. by the heater 107, and the low pressure mercury lamp 1
UV light having a wavelength of 185 nm and a light intensity of 10 mW / cm 2 is irradiated by 04.
上記の条件で形成したシリコン窒化物は、バッファード
フッ酸に対するエッチング速度が約３０ｎｍ／min、膜
の絶縁耐圧は約12ＭＶ／cmあり、従来の光化学気相成長
装置により形成したシリコン窒化膜に比べエッチング速
度は小さく、絶縁耐圧は大きく、膜特性はより優れてい
る。また、成長速度も40ｎｍ／minと従来の光化学気相
成長装置での値に比べ数倍大きい。The silicon nitride formed under the above conditions has an etching rate of about 30 nm / min for buffered hydrofluoric acid and a withstand voltage of about 12 MV / cm, which is higher than that of a silicon nitride film formed by a conventional photochemical vapor deposition apparatus. The etching rate is low, the dielectric strength is high, and the film characteristics are better. Also, the growth rate is 40 nm / min, which is several times higher than the value in the conventional photochemical vapor deposition apparatus.
さらに、本発明になる光化学気相成長装置では、基板１
０６及びガス噴出口２０９と低圧水銀灯１０４及び光照
射窓１０３との間に紫外線吸収の少ないＡr を供給し、
反応ガスをガス噴出口２０９より基板表面に強制噴出さ
せると共に基板１０６の下部に設けた排気部１１１から
真空排気を行っているため、基板近傍における紫外線強
度はほとんど減衰せずしかも光照射窓１０３近傍の反応
ガス濃度は低くなるため、光照射窓１０３に付着するシ
リコン窒化膜の形成を防止でき、従って当該シリコン窒
化膜による紫外光吸収という従来の光化学気相成長装置
のかかえていた問題も解消される。Further, in the photochemical vapor deposition apparatus according to the present invention, the substrate 1
06 and the gas ejection port 209 and the low-pressure mercury lamp 104 and the light irradiation window 103 are supplied with Ar having a small ultraviolet absorption,
Since the reactive gas is forcibly ejected from the gas ejection port 209 to the substrate surface and the vacuum exhaust is performed from the exhaust unit 111 provided in the lower portion of the substrate 106, the ultraviolet intensity near the substrate is hardly attenuated and the vicinity of the light irradiation window 103 is also achieved. Since the concentration of the reaction gas becomes low, it is possible to prevent the formation of the silicon nitride film adhering to the light irradiation window 103, and therefore, the problem of ultraviolet light absorption by the silicon nitride film, which is a problem of the conventional photochemical vapor deposition apparatus, is solved. It
以上、２つの実施例ではシリコン酸化膜およびシリコン
窒化膜を、それぞれモノシランと酸素、モノシランとア
ンモニアとを反応ガスとして使用し、成長させた結果を
示したが、本発明は光化学気相成長法により形成される
あらゆる種類の膜例えばシリコン半導体層の成長に対し
て適用できる。また、上記２つの実施例では光源を低圧
水銀灯としたが、300ｎｍ以下の波長の紫外光を照射す
る光源ならばいかなる種類のものでもかまわず、例えば
重水素灯、高圧水銀灯、エキシマ・レーザ等を光源とし
て用いることが可能である。In the above two examples, the results of growing the silicon oxide film and the silicon nitride film by using monosilane and oxygen as the reaction gas and monosilane and ammonia as the reaction gas are shown. However, the present invention is based on the photochemical vapor deposition method. It is applicable to the growth of all types of films formed, for example silicon semiconductor layers. Although the low pressure mercury lamp is used as the light source in the above two embodiments, any kind of light source may be used as long as it emits ultraviolet light having a wavelength of 300 nm or less, such as deuterium lamp, high pressure mercury lamp, excimer laser, It can be used as a light source.
以上説明したように本発明は基板表面に反応ガスを強制
噴出させ、光照射窓近傍から希釈ガスを導入し基板表面
近傍にのみ高濃度の反応ガスを供給することにより、基
板表面上には、常に新しい反応ガスを供給することがで
き、かつ反応副生成物が停滞せず、高品質な膜を形成す
ることができるという効果がある。As described above, the present invention forcibly ejects the reaction gas onto the substrate surface, introduces the diluent gas from the vicinity of the light irradiation window, and supplies the high-concentration reaction gas only to the vicinity of the substrate surface. There is an effect that a new reaction gas can always be supplied, a reaction by-product does not stagnate, and a high-quality film can be formed.
第１図は本発明の第１の実施例の断面図、第２図は本発
明の第２の実施例の断面図である。 １０１……光源室、１０２……反応室、１０３……光照
射窓、１０４……低圧水銀灯、１０５……反射板、１０
６……基板、１０７……ヒータ、１０８，１０９……反
応ガス噴出ノズル、１１０……希釈ガス導入口、１１１
……排気部、２０７……基板支持台、２０８……反応ガ
ス噴出管、２０９……ガス噴出口。FIG. 1 is a sectional view of a first embodiment of the present invention, and FIG. 2 is a sectional view of a second embodiment of the present invention. 101 ... Light source room, 102 ... Reaction room, 103 ... Light irradiation window, 104 ... Low-pressure mercury lamp, 105 ... Reflector plate, 10
6 ... Substrate, 107 ... Heater, 108, 109 ... Reactant gas ejection nozzle, 110 ... Diluting gas inlet, 111
...... Exhaust section, 207 ...... Substrate support, 208 ...... Reaction gas ejection pipe, 209 ...... Gas ejection port
Claims (1)
給部と、反応ガス供給系とを有し、光照射により反応ガ
スを励起して、その化学反応を促進させ基板の成長面に
膜を成長させる光化学気相成長装置であって、 反応室は、内部に基板載置部を収納するものであり、 基板載置部は、基板を支持するものであり、 光源は、反応室外から基板載置部上の基板の成長面に光
照射を行うものであり、 ガス供給部は、光源と基板載置部との間に、反応ガスと
反応せずしかも光源よりの光の吸収係数が小さいガスを
供給するものであり、 反応ガス供給系は、基板載置部上の成長面に反応ガスを
供給するものであり、複数のガス噴出口を有し、 複数のガス噴出口は、基板載置部上の基板成長面の真上
に載置され、該基板成長面に向けて反応ガスを高速噴出
するものであることを特徴とする光化学気相成長装置。1. A reaction chamber, a substrate mounting portion, a light source, a gas supply portion, and a reaction gas supply system, which excite the reaction gas by light irradiation to accelerate the chemical reaction of the reaction gas. A photochemical vapor deposition apparatus for growing a film on a growth surface, wherein a reaction chamber accommodates a substrate mounting portion therein, the substrate mounting portion supports a substrate, and a light source comprises: The growth surface of the substrate on the substrate mounting part is irradiated with light from outside the reaction chamber, and the gas supply part does not react with the reaction gas between the light source and the substrate mounting part and does not emit light from the light source. It supplies a gas with a small absorption coefficient, and the reaction gas supply system supplies a reaction gas to the growth surface on the substrate mounting part and has a plurality of gas ejection ports. Is placed directly above the substrate growth surface on the substrate mounting portion, and the reaction gas is rapidly sent toward the substrate growth surface. Photochemical vapor deposition apparatus, characterized in that it is intended to be out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61254313A JPH0627335B2 (en) | 1986-10-24 | 1986-10-24 | Photochemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61254313A JPH0627335B2 (en) | 1986-10-24 | 1986-10-24 | Photochemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63109173A JPS63109173A (en) | 1988-05-13 |
| JPH0627335B2 true JPH0627335B2 (en) | 1994-04-13 |
Family
ID=17263259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61254313A Expired - Fee Related JPH0627335B2 (en) | 1986-10-24 | 1986-10-24 | Photochemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0627335B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3919538A1 (en) * | 1989-06-15 | 1990-12-20 | Asea Brown Boveri | COATING DEVICE |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050168A (en) * | 1983-08-29 | 1985-03-19 | Yoshihiro Hamakawa | Production of thin solid film by photo cvd method |
-
1986
- 1986-10-24 JP JP61254313A patent/JPH0627335B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63109173A (en) | 1988-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910004039B1 (en) | Gas treatment method and apparatus for removing thin film from substrate | |
| EP1148150B1 (en) | Method and apparatus for processing semiconductor substrates with hydroxyl radicals | |
| US4749440A (en) | Gaseous process and apparatus for removing films from substrates | |
| US5710079A (en) | Method and apparatus for forming dielectric films | |
| US6507031B1 (en) | Apparatus and method of irradiating ultraviolet light | |
| US5863327A (en) | Apparatus for forming materials | |
| US5217559A (en) | Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing | |
| KR970703445A (en) | Method and apparatus for producing thin films | |
| US4986214A (en) | Thin film forming apparatus | |
| US5018479A (en) | Remote plasma enhanced CVD method and apparatus for growing an epitaxial semconductor layer | |
| US5096740A (en) | Production of cubic boron nitride films by laser deposition | |
| CA2306568C (en) | Deposition of coatings using an atmospheric pressure plasma jet | |
| KR20050044248A (en) | Surface wave excitation plasma cvd system | |
| KR20070048210A (en) | Closed loop gas purification method and system | |
| JPH0573050B2 (en) | ||
| JPH1098032A (en) | Thin film forming method and thin film forming apparatus | |
| US4645684A (en) | Method for forming deposited film | |
| JPH0627335B2 (en) | Photochemical vapor deposition equipment | |
| US7763551B2 (en) | RLSA CVD deposition control using halogen gas for hydrogen scavenging | |
| KR20070029085A (en) | Gas mixture and method of using the same for removing photoresist and post etch residue from low dielectric constant dielectric material | |
| JPH0149004B2 (en) | ||
| US6264749B1 (en) | Process and apparatus for making composite films | |
| KR20020084616A (en) | Reaction chamber for atomic layer deposition | |
| US5990006A (en) | Method for forming materials | |
| JP2003045862A (en) | Photo-excited film forming apparatus and photo-excited film forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |