JPH062944B2 - Diamond-like carbon film deposition system - Google Patents
Diamond-like carbon film deposition systemInfo
- Publication number
- JPH062944B2 JPH062944B2 JP60128099A JP12809985A JPH062944B2 JP H062944 B2 JPH062944 B2 JP H062944B2 JP 60128099 A JP60128099 A JP 60128099A JP 12809985 A JP12809985 A JP 12809985A JP H062944 B2 JPH062944 B2 JP H062944B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- film forming
- diamond
- anode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052799 carbon Inorganic materials 0.000 title claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 50
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010891 electric arc Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明はダイヤモンド様カーボンの成膜装置に関する。TECHNICAL FIELD The present invention relates to a film forming apparatus for diamond-like carbon.
ダイヤモンド様カーボンの製造には種々の方法が提案さ
れており、また一部実用化されている。例えばイオンプ
レーテイング法やイオンビームスパツタリング法などが
ある。イオンプレーテイングでは、気密成膜室を排気
し、メタン等の炭化水素ガスを炭素源として導入し、ま
たダングリングボンド置換用として水素ガスを導入し、
これらのガスを加熱分解して活性化し、これから基板上
に析出させてダイヤモンド様カーボンの成膜を行う。こ
の方法による成膜速度は低く、通常６００〜８００オン
グストローム／分程度であるに過ぎない。これは炭化水
素ガスの化学的に分解を利用しているためである。ま
た、装置の構造も複雑になる欠点があつた。Various methods have been proposed for producing diamond-like carbon, and some have been put into practical use. For example, there are an ion plating method and an ion beam spattering method. In ion plating, the airtight film forming chamber is evacuated, hydrocarbon gas such as methane is introduced as a carbon source, and hydrogen gas for dangling bond replacement is introduced.
These gases are thermally decomposed and activated, and then deposited on the substrate to form a diamond-like carbon film. The film formation rate by this method is low, usually only about 600 to 800 angstroms / minute. This is because the chemical decomposition of hydrocarbon gas is used. In addition, the structure of the device is complicated.
従つて、本発明の目的はダイヤモンド様カーボンの能率
の良い成膜装置を提供することにある。本発明の他の目
的は構造が単純なダイヤモンド様カーボン成膜装置を提
供することである。Therefore, it is an object of the present invention to provide a film forming apparatus with high efficiency of diamond-like carbon. Another object of the present invention is to provide a diamond-like carbon film forming apparatus having a simple structure.
本発明は、気密成膜室に水素ガス源と排気手段とを結合
し、該成膜室内には成膜基板を支持した陰極を設け、前
記基板に対向して陽極を配置し、これらの陽極及び陰極
を電源の正負側にそれぞれ接続して成る成膜装置におい
て、陽極は少くとも一対の対向した炭素体より成り、前
記炭素体にはそれらの間にアーク放電を生じさせる電源
が接続されていることを特徴とする、ダイヤモンド様カ
ーボン成膜装置である。According to the present invention, a hydrogen gas source and an exhaust unit are connected to an airtight film forming chamber, a cathode supporting a film forming substrate is provided in the film forming chamber, and an anode is arranged so as to face the substrate. In the film forming apparatus in which the cathode and the cathode are connected to the positive and negative sides of the power source, the anode is composed of at least a pair of facing carbon bodies, and the carbon body is connected to a power source that causes arc discharge. The diamond-like carbon film forming apparatus is characterized in that
本発明によると、炭化水素を炭素原料として導入しない
ため、成膜室の真空は適度に調整しうる。またアーク放
電により炭素イオンを多量に形成することができるの
で、ダイヤモンド様カーボンの成膜速度を上げることが
できる。さらに、ガスフローが少ないので膜厚分布が均
一になる。According to the present invention, since hydrocarbon is not introduced as a carbon raw material, the vacuum in the film forming chamber can be adjusted appropriately. Further, since a large amount of carbon ions can be formed by arc discharge, the film formation rate of diamond-like carbon can be increased. Further, since the gas flow is small, the film thickness distribution becomes uniform.
以下に本発明の成膜装置を実施例に関連して詳しく説明
する。Hereinafter, the film forming apparatus of the present invention will be described in detail with reference to Examples.
本明細書でダイヤモンド様カーボンとは、微小部分でダ
イヤモンド構造を有するカーボンのことであり、電気絶
縁性を表わすエネルギーギヤツプＥｇが大きく、また硬
度が高い物質である。この物質は電子素子等の電気絶縁
膜や耐摩耗性保護膜などに広く用いうる。ダイヤモンド
様カーボンはできるだけ均一な膜状に大きい成膜速度で
形成できることが望ましい。本発明者は炭素供給源とし
て炭素棒のアーク放電を利用することでこのような要請
に応えることができることを見出した。In the present specification, the diamond-like carbon is a carbon having a diamond structure in a minute portion, and is a substance having a large energy gap Eg representing electric insulation and a high hardness. This substance can be widely used as an electric insulating film for electronic devices, a wear resistant protective film, and the like. It is desirable that diamond-like carbon can be formed into a film as uniform as possible at a high film formation rate. The present inventor has found that such a requirement can be met by utilizing the arc discharge of a carbon rod as a carbon supply source.
第１図は本発明の成膜装置の概略図を示す。成膜室１は
気密に形成されており、弁２を介して水素ガス源に接続
されている。また弁３を介して排気ポンプに接続されて
いる。成膜室１の内部には陰極４が配置されており、そ
の面に成膜基板５が取付けられる。基板５に対向する位
置には炭素棒を向い合せた陽極６が配置されており、こ
れらの陽極６及び陰極４は電源７の正負側へそれぞれ接
続されている。基板５の近くにはヒータ８が設けてあ
り、基板のガス出しに用いられる。FIG. 1 shows a schematic view of a film forming apparatus of the present invention. The film forming chamber 1 is formed airtight, and is connected to a hydrogen gas source via a valve 2. Further, it is connected to an exhaust pump via a valve 3. A cathode 4 is arranged inside the film forming chamber 1, and a film forming substrate 5 is attached to the surface of the cathode 4. An anode 6 facing a carbon rod is arranged at a position facing the substrate 5, and the anode 6 and the cathode 4 are connected to the positive and negative sides of a power source 7, respectively. A heater 8 is provided near the substrate 5 and is used for gassing the substrate.
陽極６は対向して設けた炭素棒９、１０より成つてお
り、これらの炭素棒９、１０の間には電源１１が接続さ
れている。炭素棒９、１０の対向端は好ましくは一方を
尖端とし、他方を凹入端とする。炭素棒９、１０の間に
通電するとアーク放電を生じ、その熱で炭素棒９、１０
の対向端は蒸発し、イオン化する。炭素棒９、１０は消
耗性であるから、適当な送り装置で炭素棒の間隔を一定
に保つことが望ましい。The anode 6 is made up of carbon rods 9 and 10 provided opposite to each other, and a power source 11 is connected between these carbon rods 9 and 10. The opposite ends of the carbon rods 9 and 10 preferably have one pointed end and the other end recessed. When electricity is applied between the carbon rods 9 and 10, arc discharge occurs, and the heat causes the carbon rods 9 and 10 to be discharged.
The opposite end of is vaporized and ionized. Since the carbon rods 9 and 10 are consumable, it is desirable to keep the distance between the carbon rods constant with an appropriate feeding device.
炭素蒸気の量は炭素棒の数を増やすことにより増大しう
る。第２図はその１例を示すもので、金属ホルダー１
２、１３にそれぞれ同数の炭素棒９、９′、９″及び１
０、１０′、１０″を保持させ、ラツク−ビニオン１４
でそれらの距離を調整する。The amount of carbon vapor can be increased by increasing the number of carbon rods. Fig. 2 shows an example of this, and the metal holder 1
2 and 13 have the same number of carbon rods 9, 9 ', 9 "and 1 respectively
Holds 0, 10 ', 10 "and rack-vinion 14
Adjust those distances with.
炭素棒の代りに他の形態の陽極を用いても良い。第３図
は円板状に形成した炭素陽極を示す。円板１５の周面は
Ｖ字形に凹入しており、これと対向する円板１６の周面
は尖つたエツジとなつている。両円板を消耗に応じて矢
印の方向に徐々に回転させると、アーク放電間隙は常に
一定に維持することができる。Other forms of anode may be used instead of the carbon rod. FIG. 3 shows a disk-shaped carbon anode. The peripheral surface of the disk 15 is recessed in a V shape, and the peripheral surface of the disk 16 facing the V shape is a sharp edge. By gradually rotating both discs in the direction of the arrow in accordance with the consumption, the arc discharge gap can be constantly maintained.
動作において、弁３を開いて成膜室１を十分に排気し、
またヒータ８により基板５のガス出しを十分に行う。次
いで、弁２を開いて所定流量でＨ2ガスを導入し、また
電極４、５間に電源７を接続して電界をかけ、また電源
１１により炭素棒９、１０間（或いは第２図または第３
図の炭素棒または炭素円板間）にアーク放電を形成す
る。炭素はアーク放電の熱で気化イオン化し、電界の作
用で加速されて基板上に移行し、水素と共に基板上にダ
イヤモンド様カーボンを成膜する。炭素蒸気は基板に到
達する間あるいは到達してから一部の炭素はＨ２ガスを
とり込み一部は炭化水素となる。基板５の上にはこうし
て微小部分でダイヤモンド構造を有するダイヤモンド様
カーボンが生成する。In operation, the valve 3 is opened to exhaust the film forming chamber 1 sufficiently,
Further, the heater 8 sufficiently discharges the gas from the substrate 5. Then, the valve 2 is opened to introduce H 2 gas at a predetermined flow rate, and the power source 7 is connected between the electrodes 4 and 5 to apply an electric field, and the power source 11 is applied between the carbon rods 9 and 10 (or FIG. Third
An arc discharge is formed between the carbon rods or carbon disks in the figure). Carbon is vaporized and ionized by the heat of arc discharge, accelerated by the action of an electric field and transferred onto the substrate, and diamond-like carbon is formed on the substrate together with hydrogen. During or after the carbon vapor reaches the substrate, some of the carbon takes in H 2 gas and some becomes hydrocarbons. Thus, diamond-like carbon having a diamond structure is formed on the substrate 5 in a minute portion.
アーク放電を用いると炭素は能率良く気化イオン化され
るから、従来のものの２〜３倍の成膜速度が得られる。
また真空度の調整により硬化及び光学的エネルギーギヤ
ツプが広範囲に調整できる。When arc discharge is used, carbon is efficiently vaporized and ionized, so that a film formation rate two to three times that of the conventional one can be obtained.
Further, by adjusting the degree of vacuum, the curing and the optical energy gap can be adjusted in a wide range.
実施例 第１図の成膜装置を用い、アーク放電電力0.2〜1.0Ｋ
Ｗ、水素圧力１０-4〜１０-2Ｐａ及びバイアス電圧６０
０Ｖの条件でダイヤモンド様カーボンの成膜実験を行つ
た。その結果を第４、５及び６図に示す。第４図から分
るようにアーク放電電力を増大すること（すなわちカー
ボンの蒸発速度を増大すること）により成膜速度を従来
の２〜３倍にしうることが分る。また第５図及び第６図
から分るように成膜室圧力（水素分圧）を１×１０-2程
度まで上げると硬度ＨＶ（ビツカース）及び光学エネル
ギーギヤツプＥｇも大きく、耐摩耗性も絶縁性も良いダ
イヤモンド様カーボン膜が得られることが分る。また炭
化水素を用いないので膜厚が均一になる。Example Using the film forming apparatus of FIG. 1, arc discharge power 0.2 to 1.0K
W, hydrogen pressure 10 −4 to 10 −2 Pa and bias voltage 60
A film-forming experiment of diamond-like carbon was conducted under the condition of 0V. The results are shown in FIGS. 4, 5 and 6. As can be seen from FIG. 4, it can be seen that the film formation rate can be increased by a factor of 2 to 3 by increasing the arc discharge power (that is, increasing the carbon evaporation rate). Further, as can be seen from FIGS. 5 and 6, when the film forming chamber pressure (hydrogen partial pressure) is increased to about 1 × 10 −2 , the hardness H V (Vickers) and the optical energy gear gap Eg are large, and the wear resistance is high. It can be seen that a diamond-like carbon film having excellent properties and insulating properties can be obtained. Further, since no hydrocarbon is used, the film thickness becomes uniform.
以上のように、本発明は陽極を炭素体で構成し且つアー
ク放電で炭素原子を生成させるようにしたから、能率及
び特性の良いダイヤモンド様カーボンを提供できる。As described above, according to the present invention, the anode is made of a carbon body and carbon atoms are generated by arc discharge, so that diamond-like carbon with good efficiency and characteristics can be provided.
第１図は本発明の成膜装置の概要図、第２図は陽極の構
成を示す拡大図、第３図は他の陽極の例を示す拡大図、
第４図はアーク放電電力と成膜速度の関係を示すグラ
フ、第５図は圧力と硬度の関係を示すグラフ及び第６図
は圧力と光学エネルギーギヤツプを示すグラフである。 １：成膜室 ２：Ｈ２ガス弁 ３：排気弁 ４：陰極 ５：基板 ６：陽極 ７：電源 ８：ヒータ ９、１０：炭素棒 １１：電源 １２、１３：ホルダ １５、１６：炭素円板FIG. 1 is a schematic view of a film forming apparatus of the present invention, FIG. 2 is an enlarged view showing the structure of an anode, and FIG. 3 is an enlarged view showing another example of the anode.
FIG. 4 is a graph showing the relationship between arc discharge power and film forming rate, FIG. 5 is a graph showing the relationship between pressure and hardness, and FIG. 6 is a graph showing pressure and optical energy gap. 1: Film forming chamber 2: H 2 gas valve 3: Exhaust valve 4: Cathode 5: Substrate 6: Anode 7: Power supply 8: Heater 9, 10: Carbon rod 11: Power supply 12, 13: Holder 15, 16: Carbon circle Board
Claims (2)
成膜室に陰極を配置して基版を支持させ前記基板に対向
させて陽極を配置し、前記陽極と陰極とを電源の正負側
にそれぞれ接続して成る成膜装置において、前記陽極は
離間した少くとも一対の炭素体より成り、前記炭素体間
にアーク放電を生じさせる電源が接続されていることを
特徴とする、ダイヤモンド様カーボン成膜装置。1. A cathode is placed in an airtight film forming chamber connected to a hydrogen gas source and an exhaust means to support a base plate, and an anode is placed to face the substrate. In a film forming apparatus connected to the positive and negative sides respectively, the anode is composed of at least a pair of carbon bodies that are separated from each other, and a power source for generating an arc discharge is connected between the carbon bodies. Like carbon film forming equipment.
端となつている前記第１項記載の成膜装置。2. The film forming apparatus according to claim 1, wherein one of the opposite ends of the carbon body is a pointed end and the other is a recessed end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60128099A JPH062944B2 (en) | 1985-06-14 | 1985-06-14 | Diamond-like carbon film deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60128099A JPH062944B2 (en) | 1985-06-14 | 1985-06-14 | Diamond-like carbon film deposition system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61288069A JPS61288069A (en) | 1986-12-18 |
| JPH062944B2 true JPH062944B2 (en) | 1994-01-12 |
Family
ID=14976368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60128099A Expired - Lifetime JPH062944B2 (en) | 1985-06-14 | 1985-06-14 | Diamond-like carbon film deposition system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062944B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63176399A (en) * | 1987-01-13 | 1988-07-20 | Nippon Soken Inc | Production of diamond film |
| JPH03122091A (en) * | 1989-09-29 | 1991-05-24 | Natl Inst For Res In Inorg Mater | Rapid synthesis method of diamond |
| DE3941202A1 (en) * | 1989-12-14 | 1990-06-07 | Fried. Krupp Gmbh, 4300 Essen | METHOD FOR PRODUCING LAYERS FROM HARD CARBON MODIFICATIONS AND DEVICE FOR IMPLEMENTING THE METHOD |
| GB0108782D0 (en) * | 2001-04-07 | 2001-05-30 | Trikon Holdings Ltd | Methods and apparatus for forming precursors |
| CN113818004A (en) * | 2021-09-22 | 2021-12-21 | 吉林大学 | Diamond growth device and method |
-
1985
- 1985-06-14 JP JP60128099A patent/JPH062944B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61288069A (en) | 1986-12-18 |
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