JPH0629819B2 - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0629819B2 JPH0629819B2 JP60286939A JP28693985A JPH0629819B2 JP H0629819 B2 JPH0629819 B2 JP H0629819B2 JP 60286939 A JP60286939 A JP 60286939A JP 28693985 A JP28693985 A JP 28693985A JP H0629819 B2 JPH0629819 B2 JP H0629819B2
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- Prior art keywords
- pressure sensor
- diaphragm
- pressure
- main body
- sensor main
- Prior art date
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- Expired - Lifetime
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Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、ピエゾ抵抗効果を利用して圧力を検出する半
導体圧力センサに係わり、特にダイアフラムの保護およ
び電気信号の安定化を図った半導体圧力センサに関す
る。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor pressure sensor that detects pressure by utilizing a piezoresistive effect, and particularly to a semiconductor pressure sensor that protects a diaphragm and stabilizes an electric signal. Regarding
半導体圧力センサは、シリコン等の半導体で構成された
ダイアフラムの表面側周辺部に拡散抵抗による感圧抵抗
部が形成され、この拡散抵抗のひずみによる抵抗変化，
すなわちピエゾ抵抗効果を利用して圧力を電気信号に変
換して出力するものである。In a semiconductor pressure sensor, a pressure sensitive resistance portion due to diffusion resistance is formed in the peripheral portion on the front surface side of a diaphragm made of a semiconductor such as silicon, and resistance change due to strain of this diffusion resistance,
That is, the pressure is converted into an electric signal and output by utilizing the piezoresistive effect.
第３図は上記半導体圧力センサの断面図であって、凹状
に形成された外体１の中央部分に挿通された圧力導入路
２を持ったＴ字状負圧導入体３の上部に、該圧力導入路
２と連通する圧力導入路４を形成した基体５が前記外体
１の内壁面と所定の隙間を有して載置固定され、さらに
この基体５の前面側には断面逆凹字状部に形成され、そ
の中央部分の薄肉部分をダイアフラム６として構成し、
かつこのダイアフラム６の裏側の空間部分を負圧側室７
として構成した圧力センサ本体部８が設けられている。
９は圧力センサ本体部８の前面側に拡散抵抗層を施して
ピエゾ抵抗効果を利用して圧力を検出する感圧抵抗部で
あって、この感圧抵抗部９の圧力検出信号出力端はアル
ミニューム等の信号取出し用リードワイヤー１０を介し
て外体１の外周部に挿通されたリードピン１１に接続さ
れている。さらに、外体１前面および圧力センサ本体部
８前面は所定の空間をもった高圧側室１２を形成するよ
うにキャップ１３が被せられている。１４は正圧力導入
口である。FIG. 3 is a cross-sectional view of the semiconductor pressure sensor, showing a T-shaped negative pressure introducing body 3 having a pressure introducing passage 2 inserted through a central portion of an outer body 1 formed in a concave shape. A base body 5 having a pressure introducing passage 4 communicating with the pressure introducing passage 2 is placed and fixed on the inner wall surface of the outer body 1 with a predetermined gap, and the front surface side of the base body 5 has an inverted concave cross section. Is formed in a cylindrical shape, and the thin-walled portion of the central portion is configured as the diaphragm 6,
Moreover, the space on the back side of the diaphragm 6 is connected to the negative pressure side chamber 7
The pressure sensor body 8 configured as is provided.
Reference numeral 9 denotes a pressure-sensitive resistor portion which is provided with a diffusion resistance layer on the front surface side of the pressure sensor main body portion 8 to detect pressure by utilizing a piezoresistive effect, and the pressure detection signal output end of the pressure-sensitive resistor portion 9 is made of aluminum. It is connected to a lead pin 11 inserted through the outer peripheral portion of the outer body 1 via a lead wire 10 for taking out a signal such as a num. Further, the front surface of the outer body 1 and the front surface of the pressure sensor main body portion 8 are covered with a cap 13 so as to form a high-pressure side chamber 12 having a predetermined space. 14 is a positive pressure inlet.
ところで、以上のような半導体圧力センサは、シリコン
等の半導体の持つ脆い性質のために、圧力が急激に変化
して弾性限界を越えるとダイアフラム６が破損してしま
う。By the way, in the semiconductor pressure sensor as described above, the diaphragm 6 is damaged when the pressure abruptly changes and exceeds the elastic limit due to the brittle nature of the semiconductor such as silicon.
そこで、従来の半導体圧力センサにおいては、前記キャ
ップ１３の内側面部に前記ダイアフラム６と向き合うよ
うにバックアッププレート１５が取り付けられ、負圧に
よるダイアフラム６の変位量を制限するように構成して
いる。従来、このような構成とすることにより、負圧が
測定許容以上の圧力になったとき、ダイアフラム６が上
方にたわんでバックアッププレート１５に接触し、破損
変位量に達する前にダイアフラム６のたわみが止まり、
過大圧力のときでも安定に差圧を測定できると考えられ
ていた。Therefore, in the conventional semiconductor pressure sensor, a backup plate 15 is attached to the inner side surface of the cap 13 so as to face the diaphragm 6, and the displacement amount of the diaphragm 6 due to negative pressure is limited. Conventionally, with such a configuration, when the negative pressure exceeds a measurement allowable pressure, the diaphragm 6 bends upward and comes into contact with the backup plate 15, and the deflection of the diaphragm 6 is reached before the displacement amount of damage is reached. Stop,
It was thought that the differential pressure could be measured stably even when the pressure was excessive.
しかし、上記バックアッププレート１５は、ダイアフラ
ム６のふくらみ具合等を考慮する必要があるために形状
が複雑で製造コストが高くなり、かつその位置設定が非
常に難しいために過大圧力によるダイアフラム６の破損
保護には十分なものではなかった。また、感圧抵抗部９
の上部側に導電性のバックアッププレート１５を設けた
ことにより、ダイアフラム６の電位とバックアッププレ
ート１５の電位（通常零ボルト）が圧力印加時もしくは
動作時に絶えず異なってくるので、ダイアフラム６の上
部表面に形成された感圧抵抗部９および前記機能回路に
影響を与えて静電誤差を生じる問題がある。また、ダイ
アフラム６の電位とバップアッププレート１５の電位が
異なると、高圧側室１２内に満たされるシリコンオイル
内の不純物イオンや半導体中に捕獲されているイオンが
活性化し、ＰＮ接合部や圧力センサ本体部８表面の伝導
率が変化する原因となり、動作が不安定になって信頼性
に欠ける問題がある。However, since the backup plate 15 needs to take into consideration the degree of bulging of the diaphragm 6 and the like, the shape is complicated and the manufacturing cost is high, and the position setting thereof is very difficult. Therefore, damage to the diaphragm 6 due to excessive pressure is protected. Was not enough for. In addition, the pressure sensitive resistor 9
Since the conductive backup plate 15 is provided on the upper side of the diaphragm 6, the potential of the diaphragm 6 and the potential of the backup plate 15 (usually zero volt) constantly change when pressure is applied or during operation, so that the upper surface of the diaphragm 6 is There is a problem that the formed pressure-sensitive resistor 9 and the functional circuit are affected to cause an electrostatic error. Further, when the potential of the diaphragm 6 and the potential of the backup plate 15 are different, the impurity ions in the silicon oil filled in the high pressure side chamber 12 and the ions trapped in the semiconductor are activated, and the PN junction portion and the pressure sensor main body are activated. There is a problem that the conductivity of the surface of the portion 8 is changed, the operation becomes unstable, and the reliability is poor.
本発明は上記実情に鑑みてなされたもので、構造簡単に
して過大圧力に対し変位量を確実に制限してダイアフラ
ムの破損を防止し得るとともに、感圧抵抗部その他の機
能回路が外部電磁場の影響を受けずに長期にわたって安
定に動作し得る半導体圧力センサを提供することにあ
る。The present invention has been made in view of the above circumstances, and the structure can be simplified to reliably limit the displacement amount against excessive pressure to prevent the diaphragm from being damaged. It is to provide a semiconductor pressure sensor that can operate stably for a long period of time without being affected.
本発明は、裏側を所定の深さにくり抜いてダイアフラム
として構成された圧力センサ本体部を、前記ダイアフラ
ムに相当する部分を除いて圧力導入路を持った導電性材
料の基体と導電性材料のキャップとで挟み込むように接
合することにより、過大な正圧および負圧によるダイア
フラムの変位量を前記基体およびキャップ自体で制限す
るとともに、前記基体，キャップと前記ダイアフラムを
同電位となるように構成した半導体圧力センサである。According to the present invention, a pressure sensor main body formed as a diaphragm by hollowing out the back side to a predetermined depth has a base of a conductive material and a cap of a conductive material having a pressure introducing passage except a portion corresponding to the diaphragm. And a semiconductor configured such that the displacement of the diaphragm due to excessive positive pressure and negative pressure is limited by the base body and the cap itself, and the base body, the cap and the diaphragm have the same potential. It is a pressure sensor.
以下、本発明の一実施例について第１図および第２図を
参照して説明する。第１図は本発明半導体圧力センサの
断面図であって、２０はＮ型でかつ（１００）面を持つ
単結晶シリコンウェーハを用いて構成された圧力センサ
本体部である。この圧力センサ本体部２０はその裏面側
がエッチングもしくは機械的手段により所定深さで円形
状もしくは矩形状にくり抜かれ、これによりその円形も
しくは矩形部分の薄肉ダイアフラム２１とそれ以外の部
分である厚肉の周縁部２２とで構成されている。前記ダ
イアフラム２１の上側周辺部にはＰ型拡散抵抗のひずみ
による抵抗変化，すなわちピエゾ抵抗効果を利用して圧
力を検出して電気信号に変換する感圧抵抗部２３が設け
られ、さらに厚肉の周縁部２２には機能回路等のパター
ンが形成されている。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional view of the semiconductor pressure sensor of the present invention, in which 20 is a pressure sensor main body formed by using a single crystal silicon wafer of N type and having a (100) plane. The pressure sensor main body 20 is hollowed out at its predetermined depth into a circular or rectangular shape by etching or mechanical means on the back surface side thereof, whereby the circular or rectangular thin diaphragm 21 and the thick wall diaphragm 21 other than that are formed. It is composed of a peripheral portion 22. A pressure sensitive resistance portion 23 is provided in the upper peripheral portion of the diaphragm 21 to detect a pressure using a resistance change due to strain of a P-type diffusion resistance, that is, a piezoresistive effect and convert it into an electric signal. A pattern such as a functional circuit is formed on the peripheral portion 22.
さらに、前記圧力センサ本体部２０を挟み込むように、
そのセンサ本体部２０の裏面側に基体２４が接着層２５
により接合され、またセンサ本体部２０の上側にキャッ
プ２６が同じく接着層により接合されている。接着層２
５は例えばＡｕ−Ｓｕ半田法、接着層２７は例えばＡｌ
とＳｉの合金法等を用いて形成されている。Further, so as to sandwich the pressure sensor body 20,
The base 24 is provided with an adhesive layer 25 on the back side of the sensor body 20.
And the cap 26 is also joined to the upper side of the sensor body 20 by an adhesive layer. Adhesive layer 2
5 is, for example, the Au-Su solder method, and the adhesive layer 27 is, for example, Al.
And a Si alloy method or the like.
前記基体２４は、前記圧力センサ本体部２０と同一もし
くはそれに近い導電性材料を用いて前記センサ本体部２
０と導通して同電位となるように構成され、その形状は
内部に負圧力導入路２８が形成され、また前記ダイアフ
ラム２１に相当する位置にダイアフラム１６のくり抜き
深さによりも低く、かつ幅を小さくした凸状部２９が形
成されている。このような構造とすることにより、正側
圧力によりたわむダイアフラム２１の変位量を所定の変
位量となるように制限し、また負側の油量を調整する機
能を持っている。The base body 24 is made of a conductive material which is the same as or close to that of the pressure sensor body 20, and the sensor body 2 is made of the same material.
It is configured so as to be electrically connected to 0 to have the same electric potential, and the shape thereof has a negative pressure introducing passage 28 formed therein, and is lower than the diaphragm 16 at a position corresponding to the diaphragm 21 and has a width smaller than that of the diaphragm 16. A reduced convex portion 29 is formed. With such a structure, it has a function of limiting the amount of displacement of the diaphragm 21 that is deflected by the positive pressure to a predetermined amount of displacement, and adjusting the amount of oil on the negative side.
一方、前記キャップ２６は、前記圧力センサ本体部２０
と同一もしくはそれに近い導電性材料を用いて前記セン
サ本体部２０と導通して同電位となるように構成され、
その形状は内部に正圧力導入路３０が形成され、また前
記ダイアフラム２１に相当する位置にダイアフラム１６
および前記機能回路と設置しないようにエッチング等に
より凹状部３１が形成されている。この凹状部３１の深
さすなわちエッチング量は負側圧力に対してダイアフラ
ム２１の変位量を所定の変位量に制限する機能を持って
いる。On the other hand, the cap 26 includes the pressure sensor body 20.
And a conductive material that is the same as or close to that of the sensor main body 20 and is electrically connected to the same potential.
The shape is such that a positive pressure introducing passage 30 is formed inside, and the diaphragm 16 is provided at a position corresponding to the diaphragm 21.
Further, the concave portion 31 is formed by etching or the like so as not to be installed in the functional circuit. The depth of the concave portion 31, that is, the etching amount has a function of limiting the displacement amount of the diaphragm 21 to a predetermined displacement amount with respect to the negative pressure.
次に、第２図は、圧力センタ本体部２０への基体２４お
よびキャップ２６の接合部分を拡大して示した図であ
る。同図中４１は高濃度Ｐ層、４２は感圧素子２３等の
表面を覆うように施された絶縁層、４３は電極取出し部
を示す。Next, FIG. 2 is an enlarged view showing a joint portion of the base body 24 and the cap 26 to the pressure center main body portion 20. In the figure, 41 is a high-concentration P layer, 42 is an insulating layer provided so as to cover the surface of the pressure sensitive element 23, and 43 is an electrode lead-out portion.
従って、以上のような構成によれば、正側圧力が測定許
容範囲以上に上昇すると、圧力センサ本体部２０のダイ
アフラム２１の中央部分が下方にたわんで基体２４の凸
状部２９の面部に触れる。さらに、圧力が上昇すると、
ダイアフラム２１のたわみが増加するが、凸状部２９に
触れ始めた以降に凸状部２９に阻止されてそれ以上たわ
まない。よって、ダイアフラム２１の周辺部に発生する
応力はダイアフラム２１が凸状部２９に接触し始めた時
点から飽和し始め、ダイアフラム２１の破損する限界が
上昇する。Therefore, according to the above configuration, when the positive pressure rises above the allowable measurement range, the central portion of the diaphragm 21 of the pressure sensor body 20 bends downward and touches the surface of the convex portion 29 of the base 24. . Furthermore, as the pressure increases,
Although the deflection of the diaphragm 21 increases, the diaphragm 21 is blocked by the convex portion 29 after the convex portion 29 starts to be touched and does not bend further. Therefore, the stress generated in the peripheral portion of the diaphragm 21 starts to be saturated when the diaphragm 21 starts to contact the convex portion 29, and the limit of damage to the diaphragm 21 increases.
逆に、負側の圧力のときも測定許容範囲以上になると、
ダイアフラム２１が前記キャップ２６の凹状部３１の面
部に接触し、ダイアフラム２１の変位量が所定の変位量
となるように制限され、これによりダイアフラム２１が
破損からまぬがれる。しかも、ダイアフラム２１を持っ
た圧力センサ本体部２０が導電性材料の基体２３および
キャップ２５によりサンドイッチする構造としたので、
従来不可能とされていた差圧計であっても簡単な対称構
造物として実現することができ、キャップ２６の形状を
変えることにより例えば絶対圧計としても使用可能であ
り、応用範囲の広いものが実現できる。また、接着層２
５および２７は合金法やハンダ法により圧力センサ本体
部２０のｎ型基板と電気的に接続されており、かつ基体
２４およびキャップ２６が圧力センサ本体部２０と同一
もしくはそれに近い導電性材料で形成されているので、
圧力センサ本体部２０の電位が基体２４およびキャップ
２６にそのまま与えることができ、その結果、圧力を検
出する拡散抵抗層の感圧抵抗部２３や温度静圧等を感じ
るその他の機能回路は電気的にシールドされ、外界から
の電磁場等の影響を受けることがなく、長期間にわたっ
て動作の安定を確保できる。また、圧力センサ本体部２
０は、シリコンオイル等によって封入する際、基体２４
の凸状部２９やキャップ２６の凹状部３１の形状によ
り、正側および負側の圧力媒体（シリコンオイル）の油
量調整を行うことができ、とりわけ初期ドリフトの原因
となる油量を極力少なくすることができる。On the other hand, if the pressure is on the negative side and exceeds the allowable measurement range,
The diaphragm 21 contacts the surface of the concave portion 31 of the cap 26, and the displacement amount of the diaphragm 21 is limited to a predetermined displacement amount, which prevents the diaphragm 21 from being damaged. Moreover, since the pressure sensor main body 20 having the diaphragm 21 is sandwiched by the base body 23 of conductive material and the cap 25,
Even a differential pressure gauge that has been impossible in the past can be realized as a simple symmetrical structure, and can be used as, for example, an absolute pressure gauge by changing the shape of the cap 26, and a wide range of applications can be realized. it can. Also, the adhesive layer 2
5 and 27 are electrically connected to the n-type substrate of the pressure sensor main body 20 by an alloy method or a soldering method, and the base 24 and the cap 26 are made of a conductive material which is the same as or close to the pressure sensor main body 20. Since it has been
The electric potential of the pressure sensor main body 20 can be directly applied to the base body 24 and the cap 26, and as a result, the pressure sensitive resistance portion 23 of the diffusion resistance layer for detecting pressure and other functional circuits for sensing the static temperature and the like are electrically connected. It is shielded by and is not affected by electromagnetic fields from the outside and stable operation can be secured for a long period of time. In addition, the pressure sensor body 2
0 is the base 24 when sealed with silicone oil or the like.
The shape of the convex portion 29 of the cap 26 and the concave portion 31 of the cap 26 makes it possible to adjust the oil amount of the pressure medium (silicon oil) on the positive side and the negative side, and particularly to reduce the amount of oil that causes the initial drift as much as possible. can do.
なお、上記実施例は、差圧力計として説明したが、キャ
ップ２６の形状を変えることにより、絶対圧計としても
利用できるものである。また、キャップ２６の形状を変
えることにより、センサ本体部２０とハーメチック化し
ないで一方向もしくは２方向を接着しなくても、同様な
効果が得られる。但し、このときは従来のように圧力室
と電気導入室が形成されることになる。その他、本発明
はその要旨を逸脱しない範囲で種々変形して実施でき
る。Although the above embodiment has been described as a differential pressure gauge, it can also be used as an absolute pressure gauge by changing the shape of the cap 26. Further, by changing the shape of the cap 26, the same effect can be obtained even if the sensor body 20 is not hermetically bonded in one direction or in two directions. However, at this time, the pressure chamber and the electric introduction chamber are formed as in the conventional case. In addition, the present invention can be modified in various ways without departing from the scope of the invention.
以上詳記したように本発明によれば、圧力センサ本体部
を導電性材料の基体およびキャップによりサンドイッチ
状としたので、基体およびキャップで圧力によるダイア
フラムの変位量を所定の変位量に確実に制限できてダイ
アフラムの破損を防止し得、基体およびキャップが圧力
センサ本体部と同電位となっているので、電気的シール
ド機能により感圧抵抗部等が長期間にわたって安定に動
作し得る半導体圧力センサを提供できる。As described in detail above, according to the present invention, since the pressure sensor main body is sandwiched by the base body and the cap made of a conductive material, the displacement amount of the diaphragm due to the pressure is surely limited to a predetermined displacement amount by the base body and the cap. Since it is possible to prevent the diaphragm from being damaged and the base and the cap have the same potential as the pressure sensor main body, a semiconductor pressure sensor in which the pressure-sensitive resistor etc. can operate stably for a long period of time by the electric shield function is provided. Can be provided.
第１図および第２図は本発明の一実施例を説明するため
に示したもので、第１図は半導体圧力センサの断面図、
第２図は圧力センサ本体部に対する基体とキャップの接
合部分の拡大図、第３図は従来の半導体圧力センサの断
面図である。 ２０……圧力センサ本体部、２１……ダイアフラム、２
３……感圧抵抗部、２４……基体、２５、２７……接着
層、２６……キャップ、２９……凸状部、３１……凹状
部。1 and 2 are shown for explaining one embodiment of the present invention, and FIG. 1 is a sectional view of a semiconductor pressure sensor,
FIG. 2 is an enlarged view of a joint portion of the base and the cap with respect to the pressure sensor main body, and FIG. 3 is a sectional view of a conventional semiconductor pressure sensor. 20 ... Pressure sensor main body, 21 ... Diaphragm, 2
3 ... Pressure-sensitive resistance part, 24 ... Substrate, 25, 27 ... Adhesive layer, 26 ... Cap, 29 ... Convex part, 31 ... Concave part.
Claims (3)
にピエゾ抵抗効果を利用して圧力を検出する感圧抵抗部
が形成された薄肉のダイアフラムおよびこのダイアフラ
ム以外の部分に機能回路が形成された厚肉周辺部とを有
する圧力センサ本体部と、この圧力センサ本体部の前記
裏面周縁部側に接合され、前記ダイアフラムに相当する
位置に当該ダイアフラムの正側圧力による変位量を制限
する凸状部が形成された前記圧力センサ本体部と同一も
しくはそれに近い導電性材料を用いて当該圧力センサ本
体部と同電位に設定された基体と、前記圧力センサ本体
部表面の前記ダイアフラムを除く面部側に接合され、前
記ダイアフラムに相当する位置に少なくとも前記ダイア
フラムの負側圧力による変位量を制限する凹状部が形成
された前記圧力センサ本体部と同一もしくはそれに近い
導電性材料を用いて当該圧力センサ本体部と同電位に設
定されたキャップとを備え、 前記圧力センサ本体部の感圧抵抗部およびその他の機能
回路を電気的にシールドすることを特徴とする半導体圧
力センサ。1. A thin-walled diaphragm having a pressure-sensitive resistance portion for hollowing out a back surface to a predetermined depth and detecting pressure using a piezoresistive effect on the front surface side, and a functional circuit in a portion other than this diaphragm. A pressure sensor main body portion having a formed thick peripheral portion and a back surface peripheral edge portion of the pressure sensor main body portion are joined together, and the displacement amount of the diaphragm due to the positive pressure is limited to a position corresponding to the diaphragm. A base body set to the same potential as the pressure sensor main body portion using a conductive material that is the same as or close to the pressure sensor main body portion on which the convex portion is formed, and a surface portion of the pressure sensor main body portion surface excluding the diaphragm. And a concave portion that is joined to the side of the diaphragm and limits the amount of displacement of the diaphragm due to the negative pressure at least at a position corresponding to the diaphragm. The pressure sensor body is provided with a cap that is set to the same potential as that of the pressure sensor body using a conductive material that is the same as or close to that of the body of the pressure sensor. A semiconductor pressure sensor characterized by being shielded.
するとともに、前記圧力センサ本体部を挟むように接合
して圧力室と電気信号取出し部分とを分離したことを特
徴とする特許請求の範囲第１項記載の半導体圧力セン
サ。2. The base and the cap are made of a conductive material, and are joined so as to sandwich the pressure sensor main body so as to separate the pressure chamber and the electric signal extracting portion. The semiconductor pressure sensor according to item 1.
り、前記ダイアフラムにおける正側圧力による変位量を
制限する機能もしくは圧力媒体量の調節機能を有するも
のである特許請求の範囲第１項記載の半導体圧力セン
サ。3. The base body has a function of limiting the displacement amount of the diaphragm due to the positive pressure or a function of adjusting the pressure medium amount, depending on the shape and height of the convex portion. The semiconductor pressure sensor according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286939A JPH0629819B2 (en) | 1985-12-20 | 1985-12-20 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286939A JPH0629819B2 (en) | 1985-12-20 | 1985-12-20 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62145130A JPS62145130A (en) | 1987-06-29 |
| JPH0629819B2 true JPH0629819B2 (en) | 1994-04-20 |
Family
ID=17710908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60286939A Expired - Lifetime JPH0629819B2 (en) | 1985-12-20 | 1985-12-20 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0629819B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0319940U (en) * | 1989-07-07 | 1991-02-27 | ||
| US5189777A (en) * | 1990-12-07 | 1993-03-02 | Wisconsin Alumni Research Foundation | Method of producing micromachined differential pressure transducers |
| FR2982023B1 (en) * | 2011-10-26 | 2015-03-06 | Auxitrol Sa | MICROMECHANICAL STRUCTURE WITH DEFORMABLE MEMBRANE AND PROTECTION AGAINST STRONG DEFORMATIONS |
| US9963340B2 (en) | 2015-12-03 | 2018-05-08 | Honeywell International Inc. | Pressure sensor die over pressure protection for high over pressure to operating span ratios |
| US10197462B2 (en) * | 2016-05-25 | 2019-02-05 | Honeywell International Inc. | Differential pressure sensor full overpressure protection device |
| KR102021949B1 (en) * | 2017-08-23 | 2019-09-17 | 전자부품연구원 | Ceramic pressure sensor and manufacturing method thereof |
| WO2023037699A1 (en) * | 2021-09-10 | 2023-03-16 | 株式会社村田製作所 | Pressure sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105787B2 (en) * | 1983-02-25 | 1994-12-21 | 株式会社日立製作所 | High pressure resistant pressure sensor |
-
1985
- 1985-12-20 JP JP60286939A patent/JPH0629819B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62145130A (en) | 1987-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |