JPH0630342B2 - Vertical furnace - Google Patents
Vertical furnaceInfo
- Publication number
- JPH0630342B2 JPH0630342B2 JP59271855A JP27185584A JPH0630342B2 JP H0630342 B2 JPH0630342 B2 JP H0630342B2 JP 59271855 A JP59271855 A JP 59271855A JP 27185584 A JP27185584 A JP 27185584A JP H0630342 B2 JPH0630342 B2 JP H0630342B2
- Authority
- JP
- Japan
- Prior art keywords
- cap
- reaction tube
- vertical furnace
- ring
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造用のＣＶＤ（気相成長）炉
に関するものである。Description: TECHNICAL FIELD The present invention relates to a CVD (vapor phase growth) furnace for manufacturing a semiconductor device.
〔従来の技術〕 従来より基板に単結晶半導体やSiO2，Si3N4，Al2O3など
の絶縁膜を成長させるためにＣＶＤ炉が用いられてい
る。第３図は縦型のＣＶＤ炉の概略を示す図である。こ
れは、ウェハを収容したバスケット１をキャップ２の上
に固定して反応管３の下方より装入し、キャップ２をＯ
リング４を介して下部マニホールド５に押し当て、その
状態で上部のガス供給孔６から反応ガスを供給しながら
反応管３の温度を上げ、反応ガスを分解させてウェハ上
に所定の物質を気相成長させるようになっている。な
お、キャップ２は全周が平均した力で下部マニホールド
５に押圧できるように、その支持部分７は自在接手とな
っている。[Prior Art] Conventionally, a CVD furnace has been used to grow a single crystal semiconductor or an insulating film such as SiO 2 , Si 3 N 4 , or Al 2 O 3 on a substrate. FIG. 3 is a schematic view of a vertical CVD furnace. This is because the basket 1 containing the wafer is fixed on the cap 2 and is inserted from below the reaction tube 3, and the cap 2 is closed.
It is pressed against the lower manifold 5 via the ring 4, and in that state, the temperature of the reaction tube 3 is raised while supplying the reaction gas from the upper gas supply hole 6 to decompose the reaction gas and vaporize a predetermined substance on the wafer. It is designed to grow in phases. The support portion 7 of the cap 2 is a universal joint so that the cap 2 can be pressed against the lower manifold 5 by an average force over the entire circumference.
上記の構成のものにあっては、キャップ２が自在接手７
で押圧されるようになっているため、処理が終り、反応
管内からバスケット１を取出すときにキャップ２を下げ
ると該キャップはＯリング４とのくっつきにより平行に
下がらない。そのためキャップ２に固定されているバス
ケット１は斜になり反応管内壁に接触し、バスケット類
の破損，接触による異物の発生等が生ずるという問題が
あった。In the case of the above configuration, the cap 2 is the universal joint 7
Since the processing is completed and the cap 2 is lowered when the basket 1 is taken out from the reaction tube, the cap does not move in parallel due to the sticking with the O-ring 4. Therefore, there is a problem that the basket 1 fixed to the cap 2 is inclined and comes into contact with the inner wall of the reaction tube, causing damage to the baskets and generation of foreign matter due to the contact.
本発明は、上記問題点を解消した半導体装置の製造装置
を提供するもので、その手段は、反応管の下方よりＯリ
ングを介してキャップを気密に装着する構造を有する縦
型炉において、反応管の下部に伸縮性をもった壁を設け
たことを特徴とする縦型炉によってなされる。The present invention provides an apparatus for manufacturing a semiconductor device that solves the above-mentioned problems, and its means is a vertical furnace having a structure in which a cap is airtightly attached from below a reaction tube through an O-ring. It is made by a vertical furnace characterized by having a stretchable wall at the bottom of the tube.
また反応管の下方よりＯリングを介してキャップを気密
に装着する構造を有する縦型炉において、キャップを二
層構造とし、その上層板と下層板の中心を自由接手を有
する連結棒で連結すると共に、外周を多数個のばねで接
続したことを特徴とする縦型炉によってなされる。Further, in a vertical furnace having a structure in which a cap is airtightly attached from below the reaction tube through an O-ring, the cap has a two-layer structure, and the centers of the upper and lower plates are connected by a connecting rod having a free joint. At the same time, the vertical furnace is characterized in that the outer circumference is connected by a large number of springs.
上記縦型炉は、反応管の下方よりＯリングを介してキャ
ップを気密に装着する構造を有する縦型炉において、反
応管の下部に伸縮性をもった壁を設け且つキャップを平
行移動する構造としたことにより、キャップの反応管に
対する押圧力を平均させ、且つキャップの平行移動によ
りその上に固定されたバスケットが傾くことはなく、反
応管内壁との接触は防止される。またキャップを二重構
造とし、その上下層部間を多数個のばねで接続すること
により下層部に対する上層部の傾きを制限し、その上に
固定されたバスケットの傾きを防止し、且つ反応管に対
する押圧力を平均化することができる。The vertical furnace has a structure in which a cap is hermetically attached from below the reaction tube via an O-ring, and a structure in which a stretchable wall is provided at the bottom of the reaction tube and the cap moves in parallel As a result, the pressing force of the cap on the reaction tube is averaged, and the basket fixed on the cap does not tilt due to the parallel movement of the cap, and contact with the inner wall of the reaction tube is prevented. In addition, the cap has a double structure, and the upper and lower layers are connected by a number of springs to limit the inclination of the upper layer with respect to the lower layer and prevent the basket fixed on the upper portion from tilting. The pressing force on can be averaged.
以下、図面を参照して本発明の実施例を詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図に本発明の第１の実施例の要部を断面図として示
す。同図において、１０は炉の反応管、１１は下部マニ
ホールド、１２は伸縮性を有する壁、１３はＯリング、
１４はキャップ、１５はキャップ支持アーム、１６はキ
ャップガイド棒をそれぞれ示している。FIG. 1 is a sectional view showing a main part of a first embodiment of the present invention. In the figure, 10 is a reactor reaction tube, 11 is a lower manifold, 12 is a stretchable wall, 13 is an O-ring,
14 is a cap, 15 is a cap support arm, and 16 is a cap guide rod.
本実施例は、図に示す如く反応管１０下部に設けられた
下部マニホールド１１の下部に伸縮性のある壁１２を設
け、その下端を、ガイド棒を上下に摺動できるキャップ
支持アーム１５に固定されたキャップ１４によりＯリン
グ１３を介して封止できるようにしている。In this embodiment, as shown in the figure, a stretchable wall 12 is provided at the lower part of a lower manifold 11 provided at the lower part of the reaction tube 10, and its lower end is fixed to a cap support arm 15 capable of sliding a guide rod up and down. The cap 14 is formed so that it can be sealed via the O-ring 13.
このように構成された本実施例は、キャップ１４が反応
管１０を封止するときは、伸縮性のある壁１２が撓み、
Ｏリング１３にかかる力を平均化させ、密封を確実にす
ることができる。またキャップ１４を開放するときは、
キャップ１４はガイド棒１６上を摺動するキャップ支持
アーム １５に固定であるので傾きに対する自由度はな
く、従ってキャップ１４上に固定したバスケット等が傾
くことはない。In the present embodiment configured as described above, when the cap 14 seals the reaction tube 10, the elastic wall 12 bends,
The force exerted on the O-ring 13 can be averaged to ensure sealing. Also, when opening the cap 14,
Since the cap 14 is fixed to the cap support arm 15 that slides on the guide rod 16, there is no freedom for tilting, so that the basket or the like fixed on the cap 14 does not tilt.
次に本発明の第２の実施例を第２図により説明する。同
図において、２０は反応管、２１は下部マニホールド、
２２はＯリング、２３は２層構造のキャップ、２４はそ
の上層板、２５は下層板、２６は自由接手、２７は連結
棒、２８はばね、２９はキャップ支持アーム、３０はガ
イド棒をそれぞれ示している。Next, a second embodiment of the present invention will be described with reference to FIG. In the figure, 20 is a reaction tube, 21 is a lower manifold,
22 is an O-ring, 23 is a two-layer cap, 24 is an upper plate, 25 is a lower plate, 26 is a free joint, 27 is a connecting rod, 28 is a spring, 29 is a cap support arm, and 30 is a guide rod. Shows.
本実施例は第２図に示す如く、反応管２０の下部に設け
られた下部マニホールド２１にＯリング２２を介して押
圧封止するキャップ２３を上層板２５と下層板２６とよ
りなる二層構造とし、両層板の中心を自由接手２６を有
する連結棒２７で連結すると共に外周を多数本のばね２
８で連結し、下層板２５を、ガイド棒３０を上下に摺動
できるキャップ支持アーム２９に固定している。In this embodiment, as shown in FIG. 2, a cap 23 for pressing and sealing a lower manifold 21 provided at the lower portion of the reaction tube 20 through an O-ring 22 has a two-layer structure including an upper layer plate 25 and a lower layer plate 26. The center of both layer plates is connected by a connecting rod 27 having a free joint 26, and the outer circumference is made up of a large number of springs 2.
The lower plate 25 is fixed to the cap support arm 29 which can slide the guide rod 30 up and down.
このように構成された本実施例は、キャップ２３が開放
の際に上層板２４がＯリング２２のくっつきにより傾こ
うとしても連結棒２７が中心として対向するばね２８の
一方が延び、他方が圧縮されるようになるため、その傾
きは制限される。従ってばね２８の強さを適当に設定し
ておけば反応管内壁に対するバスケットの接触は防止さ
れる。In this embodiment configured as described above, even if the upper plate 24 is inclined by the sticking of the O-ring 22 when the cap 23 is opened, one of the opposing springs 28 with the connecting rod 27 as the center extends and the other compresses. Therefore, the inclination is limited. Therefore, if the strength of the spring 28 is set appropriately, the contact of the basket with the inner wall of the reaction tube is prevented.
以上説明したように本発明によれば、反応管の下部に伸
縮性を有する壁を設けるか、またはキャップを二層構造
とし、その上下層板を自由接手を有する連結棒及び多数
個のばねで連結することにより、キャップ開放時のキャ
ップの傾きを抑えることができ、反応管内壁に対するバ
スケットの接触を防止可能にした効果大なるものであ
る。As described above, according to the present invention, an elastic wall is provided at the bottom of the reaction tube, or the cap has a two-layer structure, and the upper and lower layer plates thereof are a connecting rod having a free joint and a large number of springs. By connecting the caps, the inclination of the caps when the caps are opened can be suppressed, and the contact of the basket with the inner wall of the reaction tube can be prevented.
第１図は本発明の縦型炉の第１の実施例を示す要部断面
図、第２図は本発明の第２の実施例を示す要部断面図、
第３図は従来の縦型炉を示す要部断面図である。 図中、10，20は反応管、11，21は下部マニホールド、１
２は伸縮性を有する壁、13，22はＯリング、14，23はキ
ャップ、15，29はキャップ支持アーム、16，30はガイド
棒、２４はキャップの上層板、２５はキャップの下層
板、２７は連結棒、２８はばねをそれぞれ示す。FIG. 1 is a sectional view of a main part showing a first embodiment of a vertical furnace of the present invention, and FIG. 2 is a sectional view of a main part showing a second embodiment of the present invention.
FIG. 3 is a cross-sectional view of essential parts showing a conventional vertical furnace. In the figure, 10 and 20 are reaction tubes, 11 and 21 are lower manifolds, and 1
2 is a stretchable wall, 13 and 22 are O-rings, 14 and 23 are caps, 15 and 29 are cap support arms, 16 and 30 are guide rods, 24 is a cap upper layer plate, 25 is a cap lower layer plate, Reference numeral 27 indicates a connecting rod, and 28 indicates a spring.
Claims (2)
キャップを気密に装着する構造を有する縦型炉におい
て、反応管の下部に伸縮性をもった壁を設けたことを特
徴とする縦型炉。1. A vertical furnace having a structure in which a cap is airtightly mounted from below a vertical reaction tube via an O-ring, wherein a stretchable wall is provided at the bottom of the reaction tube. Vertical furnace to do.
プを気密に装着する構造を有する縦型炉において、キャ
ップを二層構造とし、その上層板と下層板の中心を自由
接手を有する連結棒で連結すると共に、外周を多数個の
ばねで接続したことを特徴とする縦型炉。2. A vertical furnace having a structure in which a cap is airtightly mounted from below a reaction tube through an O-ring, and the cap has a two-layer structure, and the center of the upper plate and the lower plate is connected with a free joint. A vertical furnace characterized by being connected by rods and connecting the outer circumference by a number of springs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59271855A JPH0630342B2 (en) | 1984-12-25 | 1984-12-25 | Vertical furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59271855A JPH0630342B2 (en) | 1984-12-25 | 1984-12-25 | Vertical furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61150320A JPS61150320A (en) | 1986-07-09 |
| JPH0630342B2 true JPH0630342B2 (en) | 1994-04-20 |
Family
ID=17505817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59271855A Expired - Lifetime JPH0630342B2 (en) | 1984-12-25 | 1984-12-25 | Vertical furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630342B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55102224A (en) * | 1979-01-31 | 1980-08-05 | Hitachi Ltd | Heat treatment apparatus |
| JPS567440A (en) * | 1979-06-29 | 1981-01-26 | Mitsubishi Electric Corp | Heat treatment device |
| JPS5691417A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Heating treatment device for wafer |
| JPS6311719Y2 (en) * | 1981-03-09 | 1988-04-05 | ||
| JPS58138334U (en) * | 1982-03-12 | 1983-09-17 | 富士通株式会社 | Wafer automatic material feeding mechanism |
-
1984
- 1984-12-25 JP JP59271855A patent/JPH0630342B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61150320A (en) | 1986-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4499354A (en) | Susceptor for radiant absorption heater system | |
| US4125390A (en) | Method of vacuum-sealing vacuum articles | |
| US3705567A (en) | Device for indiffussing dopants into semiconductor wafers | |
| KR19980063270A (en) | Low pressure CVD system | |
| JPH0630342B2 (en) | Vertical furnace | |
| KR930004238B1 (en) | Vertical type vapor phase growth apparatus and method thereof | |
| JP2774748B2 (en) | Metal vacuum double container and method of manufacturing the same | |
| JP3791647B2 (en) | High pressure annealing equipment | |
| JP3473263B2 (en) | Low pressure CVD equipment | |
| JP2837333B2 (en) | Semiconductor heat treatment equipment | |
| JP2650307B2 (en) | Manufacturing method of semiconductor pressure sensor | |
| JP3056240B2 (en) | Heat treatment equipment | |
| JP3072659B2 (en) | Semiconductor heat treatment equipment | |
| JPH0539625Y2 (en) | ||
| JPH0124926Y2 (en) | ||
| JPS61289623A (en) | Vapor-phase reaction device | |
| JPH07161645A (en) | Low pressure CVD equipment | |
| JP3601926B2 (en) | Semiconductor manufacturing equipment | |
| JP3116339B2 (en) | Quartz ampoule for diffusion | |
| JPS6125246Y2 (en) | ||
| JPH02215416A (en) | Manufacture of metallic thermos bottle | |
| JP2002305152A (en) | Semiconductor substrate processing equipment | |
| JPH0648827Y2 (en) | Vertical vapor deposition equipment | |
| JP2502929Y2 (en) | Vertical heat treatment device with heat insulation cylinder | |
| JPH1167678A (en) | Vertical furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |