JPH0630794B2 - Ultrapure water production system for semiconductor cleaning - Google Patents
Ultrapure water production system for semiconductor cleaningInfo
- Publication number
- JPH0630794B2 JPH0630794B2 JP60229602A JP22960285A JPH0630794B2 JP H0630794 B2 JPH0630794 B2 JP H0630794B2 JP 60229602 A JP60229602 A JP 60229602A JP 22960285 A JP22960285 A JP 22960285A JP H0630794 B2 JPH0630794 B2 JP H0630794B2
- Authority
- JP
- Japan
- Prior art keywords
- water
- pure water
- membrane
- type
- ultrapure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Water Treatment By Sorption (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Treatment Of Water By Ion Exchange (AREA)
Description
【発明の詳細な説明】 本発明は超純水製造装置に関し、より詳しくは従来の装
置では除去し得なかつた低分子有機化合物をも除去し、
より理論純水に近い超純水を製造する装置に係る。The present invention relates to a device for producing ultrapure water, and more specifically, it removes low-molecular organic compounds that cannot be removed by conventional devices,
The present invention relates to an apparatus for producing ultrapure water that is closer to theoretical pure water.
一般に、超純水はLSIや超LSIの製造などに多量に使用さ
れており、今後ますます需要が増加しつつある。これら
の超純水としては17〜18MΩ・cmの比抵抗を有する
ものが製造されているが、より理論純水(H2Oのみから
なる水)の比抵抗18.24MΩ・cmに近づける努力がなさ
れている現状にある。In general, ultrapure water is used in large quantities in the manufacture of LSIs, VLSIs, etc., and the demand is increasing more and more in the future. As these ultrapure water, those having a specific resistance of 17 to 18 MΩ · cm have been manufactured, but efforts have been made to bring them closer to the specific resistance of theoretical pure water (water consisting of only H 2 O) of 18.24 MΩ · cm. The current situation is.
従来、超純水製造プロセスは、活性炭、イオン交換樹
脂、UV酸化、逆浸透膜(RO)、限外濾過膜(UF)等で構成
されている。Conventionally, the ultrapure water production process is composed of activated carbon, ion exchange resin, UV oxidation, reverse osmosis membrane (RO), ultrafiltration membrane (UF) and the like.
例えば、超純水を用いた半導体ウエーハ洗浄システムか
らの洗浄廃液回収工程を有する超純水製造プロセスは第
2図に示す通りである。第2図に示す装置においては、
半導体洗浄工程1からの廃水を、まず回収システムAの
活性炭吸着塔2において活性炭吸着処理し、イオン交換
塔3で処理して脱塩した後、更に必要なときには逆浸透
膜装置(図示せず)を介して紫外線酸化装置4で処理し
ている。紫外線酸化装置4においては、有機物をほぼ完
全に酸化分解させるために、一般に、酸化剤として過酸
化水素を添加し、過酸化水素存在下で紫外線を照射して
処理が行なわれる。For example, an ultrapure water production process including a cleaning waste liquid recovery step from a semiconductor wafer cleaning system using ultrapure water is as shown in FIG. In the device shown in FIG.
Waste water from the semiconductor washing step 1 is first subjected to activated carbon adsorption treatment in an activated carbon adsorption tower 2 of a recovery system A, treated in an ion exchange tower 3 for desalting, and then when necessary, a reverse osmosis membrane device (not shown). And is treated by the ultraviolet oxidation device 4 via. In the ultraviolet oxidation device 4, in order to almost completely oxidize and decompose organic substances, hydrogen peroxide is generally added as an oxidant, and ultraviolet rays are irradiated in the presence of hydrogen peroxide to perform the treatment.
このような活性炭吸着塔2、イオン交換塔3及び紫外線
酸化装置4からなる回収システムAからの処理水は、純
水製造システムBに戻される。この純水製造システムB
は、前処理システムC(凝集反応槽5及び二槽濾過器6
からなる。)、1次純水システムD(逆浸透膜装置7、
脱気器8及びイオン交換塔9からなる。)及びサブシス
テムE(紫外線殺菌装置10、混床式イオン交換器11
及び限外濾過装置12からなる。)から構成されてい
る。このような装置により、処理原水中のイオンはほぼ
完全に除去され、最終処理水の比抵抗は17MΩ・cm以
上の高純度となる。The treated water from the recovery system A including the activated carbon adsorption tower 2, the ion exchange tower 3, and the ultraviolet oxidation device 4 is returned to the pure water production system B. This pure water production system B
Is a pretreatment system C (coagulation reaction tank 5 and two tank filter 6
Consists of. ) Primary pure water system D (reverse osmosis membrane device 7,
It consists of a deaerator 8 and an ion exchange tower 9. ) And subsystem E (UV sterilizer 10, mixed bed type ion exchanger 11)
And an ultrafiltration device 12. ). With such a device, the ions in the treated raw water are almost completely removed, and the specific resistance of the final treated water becomes high purity of 17 MΩ · cm or more.
しかしながら、上述のような従来装置によつた場合、処
理原水中に含まれる低分子有機化合物、とりわけ有機ハ
ロゲン化合物は除去できず、サブシステムの最終処理水
中にリークし、これが全有機炭素(TOC)としてオンさ
れ、要求水質を満さないという問題点があつた。また、
トリハロメタンのような有機ハロゲン化合物は活性炭で
も除去できるが、処理容量が小さく、さらに長期通液の
際に活性炭層に菌が増殖するという問題点があつた。However, in the case of the conventional apparatus as described above, the low molecular weight organic compounds contained in the treated raw water, especially the organic halogen compounds cannot be removed, and leaks into the final treated water of the subsystem, which results in total organic carbon (TOC). There was a problem that the required water quality was not met. Also,
Organohalogen compounds such as trihalomethane can be removed by activated carbon, but there is a problem that the treatment capacity is small and that bacteria grow on the activated carbon layer during long-term liquid passage.
本発明は上記の如き従来装置の有する問題点を解消し、
従来装置では除去し得なかつた低分子有機化合物を除去
し、TOCをさらに低減化させ、論理純水により近い超純
水の製造装置を提供することを目的とするものである。The present invention solves the problems of the conventional device as described above,
It is an object of the present invention to provide a device for producing ultrapure water that is closer to logical pure water by removing low molecular weight organic compounds that could not be removed by conventional devices and further reducing TOC.
本発明者は従来装置では除去できない低分子有機化合
物、特にクロロホルム、トリクロロエタン、トリクロロ
エチレン、ブロムジクロルメタン、テトラクロロエチレ
ン、クロルジブロムメタン及びブロムホルムなどの有機
ハロゲン化合物を除去するために種々検討の結果、これ
ら低分子有機化合物が合成吸着剤によつて除去され、TO
Cが低減されることを知見し本発明を完成するに至つ
た。すなわち、本発明の超純水製造装置は濾過器などを
備えた原水の前処理システムと、逆浸透膜などの膜を内
蔵した膜処理装置などを備えた前処理システムの処理水
から純水を得る1次純水システムと、混床式イオン交換
器及び限外濾過膜などの膜を内蔵した膜処理装置などを
備えた1次純水システムの純水から超純水を得るサブシ
ステムとからなる半導体洗浄用超純水製造装置におい
て、前記1次純水システムの膜処理の下流側に樹脂基体
がスチレン−ビニルベンゼン系、メタアクリル酸エステ
ル系、ピニルピリジン系、スルホキシド系及びアミド系
から選ばれたイオン交換基をもたないに合成吸着剤を内
蔵した合成吸着剤塔を介在させたことを特徴とするもの
である。The present inventor has conducted various studies to remove organic halogen compounds such as chloroform, trichloroethane, trichloroethylene, bromodichloromethane, tetrachloroethylene, chlorodibromomethane and bromoform which cannot be removed by conventional devices, and these low molecular weight compounds have been removed. Organic compounds are removed by synthetic adsorbents and TO
The inventors have found that C is reduced and have completed the present invention. That is, the ultrapure water production system of the present invention produces pure water from treated water of a raw water pretreatment system including a filter and a pretreatment system including a membrane treatment device having a membrane such as a reverse osmosis membrane. From the primary pure water system to be obtained, and the subsystem for obtaining ultrapure water from pure water of the primary pure water system equipped with a mixed-bed type ion exchanger and a membrane treatment device incorporating a membrane such as an ultrafiltration membrane In the ultra pure water producing apparatus for semiconductor cleaning, the resin substrate is selected from styrene-vinylbenzene type, methacrylic acid ester type, pinylpyridine type, sulfoxide type and amide type downstream of the membrane treatment of the primary pure water system. In addition, a synthetic adsorbent column containing a synthetic adsorbent without an ion exchange group is interposed.
本発明で使用される合成吸着剤としては、イオン交換基
をもたないゲル型又はポーラス型などの樹脂で、基体と
してはスチレン−ジビニルベンゼン系、メタアクリル酸
エステル系、ビニルピリジン系、スルホキシド系あるい
はアミド系のものであり、予め有機溶剤と加温した苛性
ソーダを併用して洗浄し、TOC成分を除去して調製した
ものである。これら合成吸着剤を内蔵した合成吸着剤塔
の構造は一般に用いられているイオン交換塔と同じもの
を用いることができる。つまりイオン交換塔のカチオン
あるいはアニオン交換樹脂のかわりに前述のような合成
吸着剤を内蔵させればよい。すなわち、合成吸着剤は通
さないが水は通過することができる集水機構を塔下部に
設け、この上に合成吸着剤を積層させる構成とする。The synthetic adsorbent used in the present invention is a gel-type or porous-type resin having no ion-exchange group, and the substrate is styrene-divinylbenzene-based, methacrylic acid ester-based, vinylpyridine-based, sulfoxide-based resin. Alternatively, it is an amide type and is prepared by washing with an organic solvent and heated caustic soda together to remove the TOC component. The structure of the synthetic adsorbent column containing these synthetic adsorbents may be the same as that of a generally used ion exchange column. That is, instead of the cation or anion exchange resin in the ion exchange column, the above-mentioned synthetic adsorbent may be incorporated. That is, a water collecting mechanism that does not allow the synthetic adsorbent to pass but allows water to pass is provided at the lower part of the tower, and the synthetic adsorbent is laminated on this.
以下に本発明の一実施例を示す第1図を参照して本発明
をさらに詳しく説明する。Hereinafter, the present invention will be described in more detail with reference to FIG. 1 showing an embodiment of the present invention.
第1図において、原水は左側から矢印の如く凝集反応槽
5および二層濾過器6からなる前処理システムCに通水
され、前処理される。この前処理後の処理水は次いで、
逆浸透装置7、合成吸着剤塔13、脱気器8およびイオ
ン交換塔9からなる1次純水システムDに順次通水さ
れ、純水が得られる。この1次純水システムDにより得
られた純水はその後、紫外線殺菌装置10、混床式イオ
ン交換器11および限外濾過膜装置2からなるサブシス
テムEにより超純水が得られる。In FIG. 1, raw water is passed from a left side to a pretreatment system C including a coagulation reaction tank 5 and a two-layer filter 6 as indicated by an arrow, and pretreated. The treated water after this pretreatment is then
Water is successively passed through a primary pure water system D including a reverse osmosis device 7, a synthetic adsorbent tower 13, a deaerator 8 and an ion exchange tower 9 to obtain pure water. The pure water obtained by the primary pure water system D is then converted into ultrapure water by the subsystem E including the ultraviolet sterilizer 10, the mixed bed ion exchanger 11 and the ultrafiltration membrane device 2.
上記のような第1図のシステムC,D,Eからなる超純
水製造システムBでは合成吸着剤塔13を設置した点
が、第2図に示されるような従来装置と異なるところで
あり、この合成吸着剤塔13により前述したような低分
子の有機化合物がほぼ完全に除去される。なお、通水を
継続していくことにより合成吸着剤の有機化合物吸着能
力が低下してくるため、定期的に苛性ソーダなどの薬剤
により再生するようにする。The above-described ultrapure water production system B including the systems C, D, and E of FIG. 1 is different from the conventional apparatus shown in FIG. 2 in that the synthetic adsorbent tower 13 is installed. The synthetic adsorbent tower 13 almost completely removes the low-molecular organic compounds described above. In addition, since the organic compound adsorption capacity of the synthetic adsorbent decreases as the water flow continues, it is periodically regenerated with a chemical such as caustic soda.
また第1図に示したように合成吸着剤塔13を1次純水
システムDのフロー中に設置する場合は逆浸透装置7以
降に設ける。すなわち逆浸透装置7以降に設けることに
より、浮遊懸濁物(SS)が逆浸透装置7によつて除去さ
れ、合成吸着剤塔13の差圧上昇が防止できる。When the synthetic adsorbent tower 13 is installed in the flow of the primary pure water system D as shown in FIG. 1, it is provided after the reverse osmosis device 7. That is, by providing after the reverse osmosis device 7, the suspended suspension (SS) is removed by the reverse osmosis device 7, and the rise of the differential pressure of the synthetic adsorbent column 13 can be prevented.
このような超純水製造装置における処理流速としてはSV
=5〜50hr-1、好ましくはSV=10〜30hr-1とする。The processing flow rate in such an ultrapure water production system is SV
= 5 to 50 hr -1 , preferably SV = 10 to 30 hr -1 .
得られた超純水は各種の用途に供せられるが、第1図に
は半導体洗浄に使用した例を示している。すなわち本発
明装置によつて得られた超純水はLSIもしくは超LSIなど
の半導体洗浄(ユースポイント)1に用いられ、これに
より不純物などの混入した水は活性炭吸着塔2、イオン
交換塔3および紫外線酸化装置4からなる回収システム
Aにより回収され、1次純水システムDの入口に戻さ
れ、循環使用される。なお、回収システムAからの回収
水は前処理システムCの入口に戻されてもよい。The obtained ultrapure water can be used for various purposes, and FIG. 1 shows an example used for cleaning semiconductors. That is, the ultrapure water obtained by the apparatus of the present invention is used for the semiconductor cleaning (use point) 1 of LSI or VLSI, and the water mixed with impurities by this is activated carbon adsorption tower 2, ion exchange tower 3 and It is recovered by the recovery system A composed of the ultraviolet oxidation device 4, returned to the inlet of the primary pure water system D, and is recycled. The water recovered from the recovery system A may be returned to the inlet of the pretreatment system C.
次に実験例を示す。Next, an experimental example is shown.
実施例1 有機ハロゲン化合物を含んだ合成水を、スチレンとジビ
ニルベンゼンの共重合体である合成吸着剤(バイエル社
製、Lewatit(商標)E400/83)100mlにSV=10hr-1で通
水したところ表1に示すような結果を得た。すなわち処
理水の有機ハロゲンは著しく低減した。Example 1 Synthetic water containing an organic halogen compound was passed through 100 ml of a synthetic adsorbent (Lewatit (trademark) E400 / 83 manufactured by Bayer Co., Ltd.) which is a copolymer of styrene and divinylbenzene at SV = 10 hr −1 . However, the results shown in Table 1 were obtained. That is, the organic halogen of the treated water was significantly reduced.
実験例2 市水を第1図に示されるように逆浸透装置7の出口に合
成吸着剤Lewatit(商標)E400/83を100充填した
合成吸着剤塔13を設置した超純水製造装置と、第2図
に示されるように合成吸着剤13を設置しない装置とに
30日間通水し、サブシステムの処理水(ユースポイン
トで使用する超純水のTOC濃度を比較した。 Experimental Example 2 An ultrapure water production system in which city water was installed at the outlet of a reverse osmosis system 7 as shown in FIG. 1 and a synthetic adsorbent tower 13 filled with 100 of synthetic adsorbent Lewatit (trademark) E400 / 83 was installed. As shown in FIG. 2, water was passed through an apparatus in which the synthetic adsorbent 13 was not installed for 30 days, and the treated water of the subsystem (the TOC concentration of ultrapure water used at the point of use was compared.
その結果を表2に示す。The results are shown in Table 2.
以上のような本発明の超純水製造装置では超純水製造シ
ステム中の1次純水システムの膜処理の下流側にに特殊
な合成吸着剤を内蔵した合成吸着剤塔を設置したため、
従来装置では除去が困難であつた低分子有機化合物を除
去でき、TOCをさらに低減して理論水に極めて近い超純
水を得ることができるという効果を有する。 In the ultrapure water production system of the present invention as described above, the synthetic adsorbent tower containing the special synthetic adsorbent is installed on the downstream side of the membrane treatment of the primary pure water system in the ultrapure water production system.
It has the effect that low molecular weight organic compounds, which were difficult to remove with conventional equipment, can be removed, and TOC can be further reduced to obtain ultrapure water extremely close to theoretical water.
第1図は本発明の一実施例を示す超純水製造装置のシス
テムフローの概略説明図である。 第2図は従来装置のシステムフローの概略説明図であ
る。 1……半導体洗浄(ユースポイント) 2……活性炭吸着塔、3……イオン交換塔 4……紫外線酸化装置、5……凝集反応槽 6……二層濾過器、7……逆浸透装置 8……脱気器、9……イオン交換塔 10……紫外線殺菌装置、11……混床式イオン交換器 12……限外濾過装置、13……合成吸着剤塔 A……回収システム、B……超純水製造システム C……前処理システム、D……1次純水システム E……サブシステムFIG. 1 is a schematic explanatory view of a system flow of an ultrapure water production system showing an embodiment of the present invention. FIG. 2 is a schematic explanatory view of the system flow of the conventional device. 1 …… Semiconductor cleaning (use point) 2 …… Activated carbon adsorption tower 3 …… Ion exchange tower 4 …… UV oxidizer 5 …… Coagulation reaction tank 6 …… Two-layer filter, 7 …… Reverse osmosis equipment 8 ...... Deaerator, 9 …… Ion exchange tower 10 …… UV sterilizer, 11 …… Mixed bed ion exchanger 12 …… Ultrafiltration device, 13 …… Synthetic adsorbent tower A …… Collection system, B …… Ultrapure water production system C …… Pretreatment system, D …… Primary pure water system E …… Subsystem
Claims (1)
と、逆浸透膜などの膜を内蔵した膜処理装置などを備え
た前処理システムの処理水から純水を得る1次純水シス
テムと、混床式イオン交換器及び限外濾過膜などの膜を
内蔵した膜処理装置などを備えた1次純水システムの純
水から超純水を得るサブシステムとからなる半導体洗浄
用超純水製造装置において、前記1次純水システムの膜
処理装置の下流側に樹脂基体がスチレン−ジビニルベン
ゼン系、メタアクリル酸エステル系、ビニルピリジン
系、スルホキシド系及びアミド系から選ばれたイオン交
換基をもたない合成吸着剤を内蔵した合成吸着剤塔を介
在させたことを特徴とする半導体洗浄用超純水製造装
置。1. A primary pure water system for obtaining pure water from treated water of a raw water pretreatment system including a filter and the like, and a pretreatment system including a membrane treatment device including a membrane such as a reverse osmosis membrane. And a subsystem for obtaining ultrapure water from pure water of a primary pure water system equipped with a mixed-bed type ion exchanger and a membrane treatment device including a membrane such as an ultrafiltration membrane. In the water producing device, an ion exchange group whose resin substrate is selected from a styrene-divinylbenzene type, a methacrylic acid ester type, a vinylpyridine type, a sulfoxide type and an amide type is provided on the downstream side of the membrane treatment device of the primary pure water system. An ultrapure water production system for cleaning semiconductors, characterized in that a synthetic adsorbent tower containing a synthetic adsorbent without a gas is interposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229602A JPH0630794B2 (en) | 1985-10-14 | 1985-10-14 | Ultrapure water production system for semiconductor cleaning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229602A JPH0630794B2 (en) | 1985-10-14 | 1985-10-14 | Ultrapure water production system for semiconductor cleaning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6287299A JPS6287299A (en) | 1987-04-21 |
| JPH0630794B2 true JPH0630794B2 (en) | 1994-04-27 |
Family
ID=16894750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60229602A Expired - Fee Related JPH0630794B2 (en) | 1985-10-14 | 1985-10-14 | Ultrapure water production system for semiconductor cleaning |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630794B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02198687A (en) * | 1989-01-26 | 1990-08-07 | Asahi Chem Ind Co Ltd | Production of pure water |
| US5164093A (en) * | 1991-11-29 | 1992-11-17 | Motorola, Inc. | Apparatus and method for removing metallic contamination from fluids using silicon beads |
| JPH07328693A (en) * | 1994-06-10 | 1995-12-19 | Japan Organo Co Ltd | Ultrapure water producing device |
| JP3878452B2 (en) * | 2001-10-31 | 2007-02-07 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor integrated circuit device |
| JP5720122B2 (en) * | 2010-06-10 | 2015-05-20 | 岩崎電気株式会社 | Ultrapure water production system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4842550A (en) * | 1971-10-04 | 1973-06-20 | ||
| JPS5524949A (en) * | 1978-08-11 | 1980-02-22 | Hitachi Ltd | Manufacture of graphite-containing aluminium alloy |
| JPS5618427A (en) * | 1979-07-23 | 1981-02-21 | Fujitsu Ltd | Washing method for semiconductor substrate with pure water |
-
1985
- 1985-10-14 JP JP60229602A patent/JPH0630794B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6287299A (en) | 1987-04-21 |
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