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JPH0635339B2 - High dielectric constant porcelain composition - Google Patents
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JPH0635339B2 - High dielectric constant porcelain composition - Google Patents

High dielectric constant porcelain composition

Info

Publication number
JPH0635339B2
JPH0635339B2 JP62314884A JP31488487A JPH0635339B2 JP H0635339 B2 JPH0635339 B2 JP H0635339B2 JP 62314884 A JP62314884 A JP 62314884A JP 31488487 A JP31488487 A JP 31488487A JP H0635339 B2 JPH0635339 B2 JP H0635339B2
Authority
JP
Japan
Prior art keywords
dielectric constant
porcelain composition
high dielectric
temperature
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62314884A
Other languages
Japanese (ja)
Other versions
JPH01157447A (en
Inventor
博文 砂原
信介 矢野
進 西垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel and Sumikin Electronics Devices Inc
Original Assignee
Sumitomo Metal Ceramics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Ceramics Inc filed Critical Sumitomo Metal Ceramics Inc
Priority to JP62314884A priority Critical patent/JPH0635339B2/en
Publication of JPH01157447A publication Critical patent/JPH01157447A/en
Publication of JPH0635339B2 publication Critical patent/JPH0635339B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】 イ.発明の目的 産業上の利用分野 本発明は高誘電率磁器組成物、特に複合酸化物の固相反
応によって合成される低温焼結タイプの高誘電率系磁器
組成物に関するものである。
Detailed Description of the Invention a. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high dielectric constant porcelain composition, and more particularly to a low temperature sintering type high dielectric constant porcelain composition synthesized by a solid phase reaction of a complex oxide.

従来の技術 従来、高誘電率磁器組成物としては、チタン酸バリウム
を主成分とし、更にジルコン酸カルシウム(CaZrO3)、チ
タン酸カルシウム(CaTiO3)等を加えた複合誘電体磁器材
料が広く実用化されている。一方小型大容量コンデンサ
ーの要求は一般用、産業用とも従来以上の小型化大容量
化が要求され,その要求に答えるものとして、積層セラ
ミックコンデンサーが実用化されている。この積層セラ
ミックコンデンサーの場合には従来より内部電極に金(A
u),白金,パラジウム(Pd)或は白金パラジウム等の貴金
属が使用されている。これは次ぎの理由によるものであ
る。積層セラミックコンデンサーは内部電極の印刷され
たセラミックグリーンシートを重ね合わせこれを熱圧着
して空気中で1200〜1400℃で焼成した後、両端に外部電
極を設けることにより製造されている。このため内部電
極材料にはかかる高温で空気中で焼成しても誘電体セラ
ミック材料と反応せず、また酸化しない金属が要求され
これを満足するするものとしてパラジウム、白金等の貴
金属に限られるからである。
Conventional technology Conventionally, as a high dielectric constant porcelain composition, a composite dielectric porcelain material containing barium titanate as a main component and calcium zirconate (CaZrO 3 ), calcium titanate (CaTiO 3 ) and the like has been widely used. Has been converted. On the other hand, there is a demand for a small-sized large-capacity capacitor for both general use and industrial use, which requires smaller size and larger capacity than ever before, and in order to meet the demand, a monolithic ceramic capacitor has been put into practical use. In the case of this monolithic ceramic capacitor, gold (A
Noble metals such as u), platinum, palladium (Pd) or platinum palladium are used. This is due to the following reasons. A monolithic ceramic capacitor is manufactured by stacking ceramic green sheets on which internal electrodes are printed, thermocompressing them, firing them at 1200 to 1400 ° C. in air, and then providing external electrodes on both ends. Therefore, the internal electrode material is required to be a metal that does not react with the dielectric ceramic material even if it is fired in the air at such a high temperature and does not oxidize, and it is limited to noble metals such as palladium and platinum that satisfy this requirement. Is.

しかしながら、これら内部電極材料の製品価格に占める
割合は30〜50% にもなり積層セラミックコンデンサーの
低価格化の大きな障害となっていた。さらには焼成電気
炉の維持管理に伴う時間と経費のロス等の問題点が多か
った。
However, these internal electrode materials account for 30 to 50% of the product price, which is a major obstacle to lowering the price of monolithic ceramic capacitors. Furthermore, there were many problems such as loss of time and cost associated with maintenance of the firing electric furnace.

発明が解決しようとする問題点 上記の欠点を改良し、内部電極材料として高価な貴金属
を使用する必要がなく、誘電率、絶縁抵抗が大きく900
〜1100℃の低温で焼成できる誘電体磁器組成物を提供す
ることにある。
Problems to be Solved by the Invention By improving the above drawbacks, it is not necessary to use an expensive noble metal as an internal electrode material, and the dielectric constant and the insulation resistance are large.
It is to provide a dielectric ceramic composition that can be fired at a low temperature of ˜1100 ° C.

ロ.発明の構成 問題点を解決するための手段 本発明は酸化鉛、酸化マグネシウム、酸化ニオブ、酸化
インジウムからなり、一般式x pb(Mg1/3Nb2/3)O3-y(In1
/2Nb1/2)O3で表したとき(但し、x+y =1),x=0.
5〜0.9,y=0.1〜0.5の組成範囲からなるこ
とを特徴とする高誘電率磁器組成物である。
B. To achieve the construction problem of the Invention The present invention is lead oxide, magnesium oxide, niobium oxide, made of indium oxide, the general formula x pb (Mg 1/3 Nb 2/3) O 3-y (In 1
/ 2 Nb 1/2) when expressed in O 3 (where, x + y = 1), x = 0.
It is a high dielectric constant porcelain composition characterized by comprising a composition range of 5 to 0.9 and y = 0.1 to 0.5.

x pb(Mg1/3Nb2/3)O3-y(In1/2Nb1/2)O3系において、主成
分のひとつであるPb(Mg1/3Nb2/3)O3はペロブスカイト構
造を有する強誘電体で高誘電率(約20000 ),高絶縁抵
抗(>1012Ω) を有するすぐれた材料であるが、焼結温
度が高く(>1200℃) キュリー温度も−8℃と低温側に
あるので使用できない。又コンデンサー材料として使用
するには温度特性としても充分でない。発明者等は種々
研究の結果このPb(Mg1/3Nb2/3)O3系にPb(In1/2Nb1/2)O3
系を添加することによって、この2成分系材料はPb(Mg1
/3Nb2/3)O3系の高特性を維持しながら上記の燒結温度低
下、キュリー温度の低下、温度特性等の改善を解決した
優れた材料を見い出したものである。
In x pb (Mg 1/3 Nb 2/3) O 3-y (In 1/2 Nb 1/2) O 3 system, Pb (Mg 1/3 Nb 2/3) which is one of the main components O 3 Is a ferroelectric material with a perovskite structure and a high dielectric constant (approximately 20000) and high insulation resistance (> 10 12 Ω), but it has a high sintering temperature (> 1200 ° C) and a Curie temperature of -8. It cannot be used because it is on the low temperature side of ℃. Moreover, the temperature characteristics are not sufficient for use as a capacitor material. Inventors have result of various studies the Pb (Mg 1/3 Nb 2 /3) O 3 system Pb (In 1/2 Nb 1 /2) O 3
By adding the system, the binary system material is Pb (Mg 1
/ 3 Nb 2/3) O 3 above the sintering temperature drop while maintaining high characteristics of system, reduction of the Curie temperature, in which found a good material that solves improvements such as temperature characteristics.

次ぎに本発明の組成範囲の限定理由について述べる。Pb
(Mg1/3Nb2/3)O3系へのPb(In1/2Nb1/2)O3の添加して含有
量が、50%を超えると焼結性が低下し、誘電率の低下が
著しくなる。またその含有量が10% 未満では、焼結温度
が高く、キュリー温度も低くその添加の効果が得られな
い。
Next, the reasons for limiting the composition range of the present invention will be described. Pb
(Mg 1/3 Nb 2/ 3) added to the content of O 3 to system Pb (In 1/2 Nb 1 /2) O 3 is lowered sinterability and exceeds 50%, the dielectric constant Is significantly reduced. If the content is less than 10%, the sintering temperature is high and the Curie temperature is low, and the effect of the addition cannot be obtained.

実施例 本発明は出発原料として酸化鉛(PbO) 、酸化マグネシウ
ム(MgO) 、酸化ニオブ(Nb2O5) 、酸化インジウム(In
2O3) を用い第1表に示した配合比に秤量する。次いで
これをボールミル中で湿式混合した後、800 ℃で仮焼を
行った。この粉末をボールミルで湿式粉砕乾燥後、有機
バインダーを混合し3.0ton/cm2の圧力で直径約16mm、厚
さ2mm のペレットに加圧成形し900 〜1100℃で焼成し
た。その後焼結体に銀ペーストを塗布し600 ℃で焼付
け、測定試料とした。容量およびtan δは周波数1kHZ、
室温25℃の条件でインピーダンスアナライザーを用いて
測定し比誘電率εを次式により算出した。
Example The present invention uses lead oxide (PbO), magnesium oxide (MgO), niobium oxide (Nb 2 O 5 ), indium oxide (In
2 O 3 ) and weigh it to the mixing ratio shown in Table 1. Next, this was wet-mixed in a ball mill and then calcined at 800 ° C. This powder was wet pulverized and dried in a ball mill, mixed with an organic binder, pressure-molded at a pressure of 3.0 ton / cm 2 into pellets having a diameter of about 16 mm and a thickness of 2 mm, and fired at 900 to 1100 ° C. After that, silver paste was applied to the sintered body and baked at 600 ° C. to obtain a measurement sample. Capacity and tan δ are frequency 1kHZ,
The relative permittivity ε was calculated by the following equation, using an impedance analyzer at room temperature of 25 ° C.

C:容量(pF) S:電極面積(cm2) d:誘電体の厚さ(cm) 次に超絶縁抵抗計で100Vの電圧を1分間印加して絶縁抵
抗を温度25℃で測定した比抵抗を算出した。各組成に対
応する特性は各試料10点の平均より求めた。これ等の結
果を第1表に示し、このうち試料No.1〜5は実施例でN
o.は比較例である。第1表か明らかなように本発明の
磁器組成物は1100℃以下の温度で焼結し、その焼結体は
常温で誘電率が5000〜8000と高く、しかも誘電損失(tan
δ) は3%以下と小さいことがわかる。又誘電率の温度特
性を第1図に示した。図中の各番号は第1表の試料No.
に対応している。図からわかるようにxPb(Mg1/3Nb2/3)O
3に(In1/2Nb1/2)O3の添加量を増加してゆくに従い磁器
組成物のキュリー点は高温側にシフトし誘電率の温度変
化率も小さくなっていく。そして添加量を50mol%にする
ことによりキュリー点は室温(25 ℃) に一致する。
C: Capacitance (pF) S: Electrode area (cm 2 ) d: Dielectric thickness (cm) Next, a ratio of 100 V applied with a super insulation resistance meter for 1 minute and insulation resistance measured at a temperature of 25 ° C. The resistance was calculated. The characteristics corresponding to each composition were obtained from the average of 10 points of each sample. The results are shown in Table 1, of which Sample Nos. 1 to 5 are N
o is a comparative example. As is clear from Table 1, the porcelain composition of the present invention was sintered at a temperature of 1100 ° C. or lower, and the sintered body had a high dielectric constant of 5000 to 8000 at room temperature and a dielectric loss (tan
It can be seen that δ) is as small as 3% or less. The temperature characteristics of the dielectric constant are shown in FIG. Each number in the figure is the sample No. in Table 1.
It corresponds to. XPb As can be seen from FIG. (Mg 1/3 Nb 2/ 3) O
Curie point of the 3 (In 1/2 Nb 1/ 2) porcelain composition according slide into increasing the amount of O 3 becomes smaller even if the temperature change rate of the shift to the high temperature side dielectric constant. Then, the Curie point coincides with the room temperature (25 ° C.) by adding 50 mol%.

以上述べたように本発明の磁器組成物1100℃以下の温度
で焼結することができて5000〜8000の高誘電率でかつ3%
以下という低誘電損失(tanδ) を有し通常のディスクコ
ンデンサーのみならず積層コンデンサー、厚膜コンデン
サー用材料にも適している。
As described above, the porcelain composition of the present invention can be sintered at a temperature of 1100 ° C. or less and has a high dielectric constant of 5000 to 8000 and 3%.
It has the following low dielectric loss (tan δ) and is suitable not only for ordinary disk capacitors but also for multilayer capacitors and thick film capacitors.

ハ.発明の効果 従って、本発明によれば磁器組成物を焼成する焼成炉は
1100℃迄の耐熱性があればよいので安価であり、また低
温焼成のための消費エネルギーが節約でき更に積層セラ
ミックコンデンサーにおいて内部電極に高価な金、白
金、パラジウム等の金属を使用することなく低価格の銀
系の金属を使用できるので本発明の効果は大である。
C. Therefore, according to the present invention, the firing furnace for firing the porcelain composition is
Heat resistance up to 1100 ° C is all that is required, so it is inexpensive, and energy consumption for low temperature firing can be saved. Furthermore, low cost is achieved without using expensive metals such as gold, platinum, and palladium for the internal electrodes in multilayer ceramic capacitors. The effect of the present invention is great because inexpensive silver-based metals can be used.

【図面の簡単な説明】[Brief description of drawings]

第1図は高誘電率磁器組成物の誘電率の温度特性を示
し、図中1,2,4 は本発明の実施例で第1表の試料No.1,
2,4 に対応しNo.は比較例でに対応している。
FIG. 1 shows the temperature characteristics of the dielectric constant of the high dielectric constant porcelain composition. In the figure, 1, 2 and 4 are the examples of the present invention, and sample No. 1 of Table 1
Nos. 2 and 4 correspond to No. in the comparative example.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】酸化鉛、酸化マグネシウム、酸化ニオブ、
酸化インジウムからなり、一般式 x pb(Mg1/3Nb2/3)O3-y(In1/2Nb1/2)O3で表したとき(但
し、x+y =1),x=0.5〜0.9,y=0.1〜
0.5の組成範囲からなることを特徴とする高誘電率磁
器組成物。
1. Lead oxide, magnesium oxide, niobium oxide,
Made of indium oxide, when expressed by the general formula x pb (Mg 1/3 Nb 2/3) O 3-y (In 1/2 Nb 1/2) O 3 ( where, x + y = 1), x = 0.5-0.9, y = 0.1
A high dielectric constant porcelain composition characterized by comprising a composition range of 0.5.
JP62314884A 1987-12-11 1987-12-11 High dielectric constant porcelain composition Expired - Fee Related JPH0635339B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62314884A JPH0635339B2 (en) 1987-12-11 1987-12-11 High dielectric constant porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62314884A JPH0635339B2 (en) 1987-12-11 1987-12-11 High dielectric constant porcelain composition

Publications (2)

Publication Number Publication Date
JPH01157447A JPH01157447A (en) 1989-06-20
JPH0635339B2 true JPH0635339B2 (en) 1994-05-11

Family

ID=18058784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62314884A Expired - Fee Related JPH0635339B2 (en) 1987-12-11 1987-12-11 High dielectric constant porcelain composition

Country Status (1)

Country Link
JP (1) JPH0635339B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182033A (en) * 1985-10-24 1987-05-07 Stc Plc Dielectric compositions

Also Published As

Publication number Publication date
JPH01157447A (en) 1989-06-20

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