JPH0635340B2 - Manufacturing method of ZnS sintered body and source for electron beam evaporation - Google Patents
Manufacturing method of ZnS sintered body and source for electron beam evaporationInfo
- Publication number
- JPH0635340B2 JPH0635340B2 JP63210247A JP21024788A JPH0635340B2 JP H0635340 B2 JPH0635340 B2 JP H0635340B2 JP 63210247 A JP63210247 A JP 63210247A JP 21024788 A JP21024788 A JP 21024788A JP H0635340 B2 JPH0635340 B2 JP H0635340B2
- Authority
- JP
- Japan
- Prior art keywords
- zns
- sintered body
- electron beam
- source
- zns sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、ZnS焼結体の製造法に関する。ZnSの薄膜は、
電気光学的デバイス、たとえば交流薄膜電場発光ディス
プレイの蛍光体薄膜として用いられる。本発明によるZn
S焼結体は、前記のような薄膜を形成するための電子ビ
ーム蒸着用ソースとして好適である。TECHNICAL FIELD The present invention relates to a method for producing a ZnS sintered body. ZnS thin film is
It is used as a phosphor thin film of an electro-optical device, for example, an AC thin film electroluminescent display. Zn according to the invention
The S sintered body is suitable as a source for electron beam evaporation for forming the above-mentioned thin film.
従来の技術 ZnS薄膜を形成するために電子ビーム加熱蒸着法が最も
多く利用されている。この時蒸発ソースとして用いるZn
S焼結体は、ZnS粉末を焼結したものであるが、その
焼結性が悪いために相対密度が60〜70%程度であっ
た。相対密度が60〜70%程度のZnS焼結体を電子ビ
ーム蒸着ソースとして用いると、形成されるZnS薄膜中
にZnSと同成分の1μm以上の粒径を持つツブが多数生
成する。これは電子ビームの照射によって焼結体が加熱
されると同時に帯電し、焼結体の密度が低い場合粒子が
静電的な反発力で粒子状のまま飛散して基板上に付着す
るためである。このようなツブが生成したZnS薄膜は、
たとえば交流薄膜電場発光ディスプレイの螢光体薄膜と
した場合、絶縁破壊の発生源となったり、電極パタニン
グ等のプロセス中で薬液がツブ近傍から侵入し、輝度ム
ラを生じて発光の均一性を悪くする。Conventional Technology The electron beam heating evaporation method is most widely used for forming ZnS thin films. Zn used as an evaporation source at this time
The S sintered body was obtained by sintering ZnS powder, but its relative density was about 60 to 70% because of its poor sinterability. When a ZnS sintered body having a relative density of about 60 to 70% is used as an electron beam evaporation source, a large number of tubs having the same composition as ZnS and having a grain size of 1 μm or more are generated in the formed ZnS thin film. This is because when the sintered body is heated by the electron beam irradiation, it is charged at the same time, and when the density of the sintered body is low, the particles scatter in the form of particles due to electrostatic repulsive force and adhere to the substrate. is there. The ZnS thin film produced by such a tab is
For example, when it is used as a fluorescent thin film for an AC thin film electroluminescent display, it becomes a source of dielectric breakdown or a chemical solution enters from near the tube during the process such as electrode patterning, resulting in uneven brightness and poor uniformity of light emission. To do.
そこで、焼結体の密度を上げるためにホットプレス法で
焼結した蒸着ソースを用いる試みもあるが、この方法で
は大量に焼結体を作成することに難があり、工業的でな
い。Therefore, there is an attempt to use a vapor deposition source sintered by a hot pressing method in order to increase the density of the sintered body, but this method has a difficulty in producing a large number of sintered bodies and is not industrial.
一方、高密度ZnS焼結体を得る方法として、平均粒径
0.5μmのZnS粉末にBa化合物、たとえばBaCl2を0.
03モル%以上添加し、800kg/cm2の圧力で成形し
た後H2Sを含む雰囲気中で1000℃以上の温度で焼結
すると、相対密度が90%以上の焼結体が得られること
が報告されている(The Journal of the American Ceram
ic Society,Vol.65,No.2,pp.c18〜c19(1982))。On the other hand, as a method for obtaining a high-density ZnS sintered body, a Zn compound having an average particle diameter of 0.5 μm and a Ba compound, for example, BaCl 2 are added to a ZnO powder.
Addition of 03 mol% or more, molding at a pressure of 800 kg / cm 2 and sintering at a temperature of 1000 ° C. or more in an atmosphere containing H 2 S may give a sintered body having a relative density of 90% or more. Reported (The Journal of the American Ceram
ic Society, Vol. 65, No. 2, pp. c18 to c19 (1982)).
発明が解決しようとする課題 上記の報告においては比較的小さな成形体(16mm直径,
3mm厚さ)での実験例を記載しているのにすぎない。ZnS
薄膜を形成するための焼結体は直径25mm,厚さ20mm
程度の大きさのものが通常必要である。そのため焼結前
にプレス成形によって直径30mm,厚さ25mm程度の寸
法の成形体を作成しなくてはならない。かかる寸法の成
形体を作成するために、通常の金型を用いてプレス成形
を行うと、ZnS粉末の本質的な成形性の悪さと、適当な
有機樹脂系のバインダーが用いられないため、600kg
/cm2以上の圧力でラミネーションやカケの生じない完
全な成形体を作成することは非常に困難である。600
kg/cm2以上の圧力でプレス成形しないと相対密度90
%以上の焼結体は望めないし、またたとえ部分的に高密
度であってもラミネーションの生じた焼結体を密着ソー
スに用いるとZnS薄膜中にツブが発生し易くなる。有機
樹脂系のバインダーを用いることができないのは、焼結
の熱処理雰囲気がAr(またはN2)とH2Sの非酸化性雰
囲気が必要なためであり、一般に揮発し易いと考えられ
るショウノウやアクリル系のバインダーを用いると、焼
成後焼結体中にカーボンが残存する不都合がある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In the above report, a relatively small compact (16 mm diameter,
Only the experimental examples for 3 mm thickness) are described. ZnS
The sintered body for forming a thin film has a diameter of 25 mm and a thickness of 20 mm.
Something of a size is usually required. Therefore, before sintering, it is necessary to prepare a molded body having a diameter of 30 mm and a thickness of 25 mm by press molding. When press molding is carried out using an ordinary mold in order to create a molded body of such a size, 600 kg due to the inherent poor moldability of ZnS powder and the use of a suitable organic resin-based binder.
It is very difficult to produce a complete molded body that does not cause lamination or chipping at a pressure of / cm 2 or more. 600
Relative density of 90 unless press-molded at a pressure of kg / cm 2 or more
% Or more of the sintered body is not desired, and if a sintered body having lamination even if the density is partially high is used as a contact source, a grit is likely to occur in the ZnS thin film. The reason why the organic resin-based binder cannot be used is that the heat treatment atmosphere for sintering needs to be a non-oxidizing atmosphere of Ar (or N 2 ) and H 2 S. When an acrylic binder is used, there is a disadvantage that carbon remains in the sintered body after firing.
課題を解決するための手段 本発明では、Ba成分を添加したZnS粉末を純水をバイン
ダーにして50〜200kg/cm2の圧力で金型を用いて
成形し、ついで冷間静水圧成形法により600kg/cm2
以上の圧力でプレスして最終成形体とし、これをH2S
ガスを含む不活性ガス雰囲気中で1000℃以上の温度
で焼結するものである。Means for Solving the Problems In the present invention, ZnS powder added with a Ba component is molded with a mold using pure water as a binder at a pressure of 50 to 200 kg / cm 2 , and then by cold isostatic pressing. 600 kg / cm 2
It is pressed with the above pressure to obtain a final molded body, and this is made into H 2 S.
Sintering is performed at a temperature of 1000 ° C. or higher in an inert gas atmosphere containing a gas.
作 用 Ba成分を添加したZnS粉末を純水をバインダーにして5
0〜200kg/cm2の圧力で金型を用いて成形すると、
直径30mm,厚さ25mm程度の大きさの円盤状にしても
カケやラミネーションが全く生じない。そしてこの成形
体は、簡単には破損しないので、以後の製造プロセスで
強度的に十分耐えることができる。Working ZnS powder with Ba component added, using pure water as binder 5
When molding with a mold at a pressure of 0 to 200 kg / cm 2 ,
Even if it has a disk shape with a diameter of 30 mm and a thickness of 25 mm, no chipping or lamination occurs. Since this molded body does not easily break, it can sufficiently withstand the strength in the subsequent manufacturing process.
バインダーとして添加する純水の割合はZnS粉末に対し
て5〜20重量%が適当である。5重量%未満ではラミ
ネーションやカケが生じやすく、また20重量%を超え
ると成形時に水がしみ出す。The proportion of pure water added as a binder is appropriately 5 to 20% by weight with respect to the ZnS powder. If it is less than 5% by weight, lamination and chipping are likely to occur, and if it exceeds 20% by weight, water seeps out during molding.
ZnS粉末に添加するBa成分としては、BaCl2,Ba(NO3)3,B
aCO3,Ba(OH)2,BaSなどを用いることができ、その添加割
合はZnSに対し0.03モル%以上で効果を発揮する。Ba components added to ZnS powder include BaCl 2 , Ba (NO 3 ) 3 , B
It is possible to use aCO 3 , Ba (OH) 2 , BaS and the like, and the effect is exhibited when the addition ratio thereof is 0.03 mol% or more with respect to ZnS.
次に、前記の成形体を冷間静水圧成形法により600kg
/cm2以上の圧力で成形し、これをH2Sを含む不活性
ガス中で1000℃以上の温度で焼結することにより、
相対密度90%以上の焼結体をうることができる。Next, 600 kg of the above-mentioned molded body is subjected to cold isostatic pressing.
/ Cm 2 or more pressure, and by sintering this in an inert gas containing H 2 S at a temperature of 1000 ° C. or more,
A sintered body having a relative density of 90% or more can be obtained.
以上のようにして得られる相対密度90%以上のZnS焼
結体を電子ビーム蒸着ソースにすることによって、電子
ビームによる帯電でソースから粒子状のツブが飛散する
ことを防ぐことができ、均質,平坦なZnS薄膜を作成す
ることができる。By using the ZnS sintered body having a relative density of 90% or more obtained as described above as an electron beam evaporation source, it is possible to prevent scattering of particulate particles from the source due to electrification by an electron beam. A flat ZnS thin film can be prepared.
なお、Ba成分を含んだZnS焼結体を蒸着ソースにしてZnS
薄膜を作成しても、ZnSが優先的に蒸発しBa成分はソー
スの中に残留して、ZnS薄膜中にはほとんど混入しない
ことが確認された。従ってBa成分の添加量は焼結性を
良くするために多くてもかまわないが、必要以上添加す
る必要もないので1モル%までが適当である。The ZnS sintered body containing the Ba component was used as the evaporation source for ZnS.
It was confirmed that even when the thin film was formed, ZnS was preferentially evaporated and the Ba component remained in the source, and was hardly mixed in the ZnS thin film. Therefore, the Ba component may be added in a large amount in order to improve the sinterability, but it is not necessary to add it more than necessary, so 1 mol% is appropriate.
実施例 0.03モル%のBaCl2を添加したZnS粉末に、バインダ
ーとして、純水を10重量%添加した。これを金型を用
いて、100kg/cm2圧力で、直径30mm,厚さ約25m
mの円盤状成形体を多数作成した。前記の説明のよう
に、この条件では何らラミネーションやカケが生じない
完全な成形体が得られる。ひきつづき、冷間静水圧成形
法を用いて上記成形体を400〜2000kg/cm2の各
種静水圧でプレスし、最終的な成形体を作成した。冷間
静水圧プレスを行わなかったサンプルも含めて、上記最
終成形体をH2S(20%)−Ar(80%)雰囲気中で10
00℃と1100℃の2種類の温度で1時間熱処理を行
い焼結体を作成した。各種条件で作成した焼結体の相対
密度を測定し、次表にまとめて示した。焼結体は何らラ
ミネーションやカケの無い完全なものであった。Example 10 To a ZnS powder added with 0.03 mol% of BaCl 2 , 10 wt% of pure water was added as a binder. Using a mold, pressure of 100 kg / cm 2 at a diameter of 30 mm and a thickness of about 25 m
A large number of disk-shaped molded bodies of m were prepared. As described above, under these conditions, a complete molded body without any lamination or chipping can be obtained. Subsequently, the above-mentioned molded body was pressed at various hydrostatic pressures of 400 to 2000 kg / cm 2 using the cold isostatic molding method to prepare a final molded body. The final compact including the sample which was not subjected to cold isostatic pressing was subjected to 10% H 2 S (20%)-Ar (80%) atmosphere.
Heat treatment was performed for 1 hour at two temperatures of 00 ° C. and 1100 ° C. to prepare a sintered body. The relative density of the sintered body prepared under various conditions was measured and summarized in the following table. The sintered body was perfect with no lamination or chipping.
表に示されるように、1000℃の焼結温度の場合は1
300kg/cm2以上、1100℃の焼結温度の場合は6
00kg/cm2以上の静水圧でプレスすれば相対密度90
%以上の焼結体が得られる。冷間静水圧成形の圧力効果
は2000kg/cm2でほぼ飽和傾向にある。表の実験で
はBaCl2の添加割合は0.03モル%であるが、0.1
モル%のBaCl2を添加した場合は1000℃の焼結温
度、600kg/cm2の静水圧で90%で相対密度の焼結
体が得られた。 As shown in the table, 1 at a sintering temperature of 1000 ° C.
300 kg / cm 2 or more, 6 at a sintering temperature of 1100 ° C
Relative density of 90 if pressed with hydrostatic pressure of 00 kg / cm 2 or more
% Or more of the sintered body is obtained. The pressure effect of cold isostatic pressing is 2000 kg / cm 2 and tends to be almost saturated. In the experiment of the table, the addition ratio of BaCl 2 is 0.03 mol%, but 0.1
When mol% of BaCl 2 was added, a sintered body having a relative density of 90% was obtained at a sintering temperature of 1000 ° C. and a hydrostatic pressure of 600 kg / cm 2 .
なお、焼結温度を1200℃とすると、1100℃の場
合とほとんど同じ相対密度の焼結体が得られた。またZn
S粉末に添加するBa化合物は、陰イオンの種類を問わ
ず、Ba(NO3)2,BaCO3,Ba(OH)2,BaSでも
効果があった。When the sintering temperature was 1200 ° C, a sintered body having a relative density almost the same as that at 1100 ° C was obtained. Also Zn
Ba compound to be added to the S powder, regardless of the type of anion, Ba (NO 3) had 2, BaCO 3, Ba (OH ) 2, BaS any effect.
次に、上記で得られた相対密度90%以上のZnS焼結体
を電子ビーム蒸着法の蒸着ソースにしてZnS薄膜を形成
したところ、薄膜内にツブは何ら生成しなかった。相対
密度80%前後の焼結体を用いた場合はツブが生成した
り、しなかったりした。60〜70%でほぼ確実にツブ
が生成した。Next, when a ZnS thin film was formed by using the ZnS sintered body having a relative density of 90% or more obtained above as a vapor deposition source of an electron beam vapor deposition method, no tab was formed in the thin film. When a sintered body having a relative density of about 80% was used, no bud was formed or not. At 60 to 70%, tubs were almost certainly formed.
発明の効果 本発明の製造法によると、ホットプレス法を必要とせず
に大量に高密度のZnS焼結体を得ることができる。ま
た、本発明の方法によって作成したZnS焼結体を電子ビ
ーム蒸着法の蒸着ソースにすることによって、均質,平
坦なZnS薄膜を形成することができる。EFFECTS OF THE INVENTION According to the manufacturing method of the present invention, a high density ZnS sintered body can be obtained in large quantities without the need for hot pressing. Further, by using the ZnS sintered body produced by the method of the present invention as a vapor deposition source for electron beam vapor deposition, a uniform and flat ZnS thin film can be formed.
Claims (5)
ダーにして50〜200kg/cm2の圧力で金型を用いて
プレス成形し、ついで冷間静水圧成形法により600kg
/cm2以上の圧力でプレスして成形体を作成し、この成
形体をH2Sガスを含む不活性ガス雰囲気中で1000℃
以上の温度で焼結することを特徴とするZnS焼結体の製
造法。1. A ZnS powder containing a Ba component is press-molded with pure water as a binder at a pressure of 50 to 200 kg / cm 2 using a mold, and then 600 kg by cold isostatic pressing.
Pressed at a pressure of / cm 2 or more to form a molded body, and this molded body is heated to 1000 ° C. in an inert gas atmosphere containing H 2 S gas.
A method for producing a ZnS sintered body, which is characterized by sintering at the above temperature.
3およびBaSからなるBa化合物群から選ばれた1種である
請求項1記載のZnS焼結体の製造法。2. The Ba component is BaCl 2 , Ba (NO 3 ) 2 , Ba (OH) 2 , BaCO.
The method for producing a ZnS sintered body according to claim 1, wherein the ZnS sintered body is one selected from the Ba compound group consisting of 3 and BaS.
03〜1.0モル%である請求項2記載のZnS焼結体の
製造法。3. The addition ratio of the Ba compound to the ZnS powder is 0.
The method for producing a ZnS sintered body according to claim 2, wherein the content is 03 to 1.0 mol%.
対し5〜20重量%である請求項1記載のZnS焼結体の
製造法。4. The method for producing a ZnS sintered body according to claim 1, wherein the proportion of pure water added to the binder is 5 to 20% by weight based on the ZnS powder.
90%以上のZnS焼結体からなる電子ビーム蒸着用ソー
ス。5. A source for electron beam evaporation, comprising a ZnS sintered body having a relative density of 90% or more produced by the method of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210247A JPH0635340B2 (en) | 1988-08-24 | 1988-08-24 | Manufacturing method of ZnS sintered body and source for electron beam evaporation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210247A JPH0635340B2 (en) | 1988-08-24 | 1988-08-24 | Manufacturing method of ZnS sintered body and source for electron beam evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0259463A JPH0259463A (en) | 1990-02-28 |
| JPH0635340B2 true JPH0635340B2 (en) | 1994-05-11 |
Family
ID=16586220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63210247A Expired - Lifetime JPH0635340B2 (en) | 1988-08-24 | 1988-08-24 | Manufacturing method of ZnS sintered body and source for electron beam evaporation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0635340B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009028087A1 (en) * | 2007-08-31 | 2009-03-05 | Kuraray Luminas Co., Ltd. | High-density group ii-vi compound semiconductor molding and process for producing the same |
-
1988
- 1988-08-24 JP JP63210247A patent/JPH0635340B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0259463A (en) | 1990-02-28 |
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