JPH0635924B2 - Position detecting method, apparatus therefor and position aligning apparatus - Google Patents
Position detecting method, apparatus therefor and position aligning apparatusInfo
- Publication number
- JPH0635924B2 JPH0635924B2 JP2101571A JP10157190A JPH0635924B2 JP H0635924 B2 JPH0635924 B2 JP H0635924B2 JP 2101571 A JP2101571 A JP 2101571A JP 10157190 A JP10157190 A JP 10157190A JP H0635924 B2 JPH0635924 B2 JP H0635924B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- diffracted light
- order
- directions
- diffraction grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 11
- 238000001514 detection method Methods 0.000 claims description 43
- 230000001427 coherent effect Effects 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 23
- 238000006073 displacement reaction Methods 0.000 claims description 18
- 238000000605 extraction Methods 0.000 claims description 11
- 230000002452 interceptive effect Effects 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 4
- 230000005469 synchrotron radiation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optical Transform (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体超微細加工や超精密測定等において
光ヘテロダイン干渉光を利用する位置検出方法及びその
装置、更にその位置検出構成を用いて2つの物体の超精
密位置合せを行なう位置合せ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention uses a position detection method and device using optical heterodyne interference light in semiconductor ultrafine processing, ultraprecision measurement, and the like, and further uses the position detection configuration. The present invention relates to an alignment device that performs ultra-precision alignment of two objects.
シンクロトロン放射光リソグラフィ用アライナやフォト
ステッパ等の精密位置検出技術では、例えば特開昭62
−261003号等のように、光ヘテロダイン位置検出
方式が試作機レベルで実用化され始めている。A precise position detecting technique such as an aligner for synchrotron radiation photolithography or a photostepper is disclosed in, for example, JP-A-62-62.
Optical heterodyne position detection methods such as No. 261003 have begun to be put to practical use at the prototype level.
第7図は上記の従来技術に示された干渉回折光を利用す
る位置検出手段の概要が示されており、まずその装置構
成としては、第1の物体となるマスクA及び第2の物体
となるウェハB上に形成された各回折格子(1a)(1b)と、
直交直線偏光のわずかに異なる2周波数の光を発生され
るレーザ装置からなる光源(2)と、後述する偏光ビーム
スプリッタ(40a)で分離した光の方向を調整して前記回
折格子(1a)(1b)の格子面法線に対して±θn〔θnは回
折の式n・λ=P・sinθn(λは光源波長、nは正の
整数)を満足する〕の角度を持つ方向から照射するミラ
ー(42a)(43a)からなる入射角調整手段と、光源(2)から
くる2偏光を分離して前記ミラー(42a)(43a)方向に夫々
分岐する偏光ビームスプリッタ(40a)及び前記回折格子
(1a)(1b)から垂直方向に取り出される各回折光を干渉せ
しめて干渉光とする偏光板(56)(57)からなる光干渉手段
と、この偏光板(56)(57)により干渉せしめて生成された
ビート信号を検出するディテクタ(60a)(62a)からなる検
出手段と、このディテクタ(60a)(62a)の夫々で検出され
たビート信号の位相ずれを検出して位相計に表示する信
号処理手段(70)とを有している。FIG. 7 shows the outline of the position detecting means utilizing the interference diffracted light shown in the above-mentioned prior art. First, the device configuration is such that a mask A and a second object which are the first object are provided. Each diffraction grating (1a) (1b) formed on the wafer B
The diffraction grating (1a) (by adjusting the direction of the light separated by a light source (2) composed of a laser device that generates two slightly different frequencies of orthogonal linearly polarized light and a polarization beam splitter (40a) described later. A mirror that irradiates from a direction having an angle of ± θn with respect to the lattice plane normal of 1b) [θn satisfies the equation of diffraction n · λ = P · sin θn (λ is the light source wavelength, n is a positive integer)] (42a) and (43a) incident angle adjusting means, a polarization beam splitter (40a) for separating two polarized lights coming from the light source (2) and branching them into the mirrors (42a) and (43a) respectively, and the diffraction grating.
(1a) (1b) to interfere with each other diffracted light in the vertical direction to make interference light, the optical interference means consisting of polarizing plates (56) (57), and these polarizing plates (56) (57) Detected by the detector (60a) (62a) for detecting the beat signal generated by the detector, and the phase shift of the beat signal detected by each of the detectors (60a) (62a) is detected and displayed on the phase meter. And a signal processing means (70).
そして前記光源(2)から発せられる光は2周波数成分f
1、f2を有しており、偏光ビームスプリッタ(40a)で
f1の周波数成分の光とf2の周波数成分の光に分離さ
れ、夫々ミラー(42a)(43a)によって回折格子(1a)(1b)に
対して±n次方向(例えば±1次方向)から入射する。
回折格子(1a)(1b)から垂直方向に回折された光f1、f
2(図中破線で示す)は、ミラー(38)及びプリズムミラ
ー(39)を通って各偏光板(56)(57)で可干渉となり、ディ
テクタ(60a)(62a)で夫々ビート信号が検出される。各デ
ィテクタ(60a)(62a)で検出されたビート信号間では、回
折格子(1a)(1b)の位置ずれ量に比例した位相差を生じ
る。この位相差を信号処理手段(70)の位相計で検出する
ことにより、2つの回折格子(1a)(1b)間の相対的位置ず
れ量を知ることになる。The light emitted from the light source (2) has two frequency components f
1 and f 2 are separated by a polarization beam splitter (40a) into light of frequency component of f 1 and light of frequency component of f 2 , and the diffraction grating (1a) is separated by mirrors (42a) and (43a), respectively. Incident from (1b) from ± nth direction (for example, ± first order).
Lights f 1 and f diffracted in the vertical direction from the diffraction gratings (1a) and (1b)
2 (indicated by a broken line in the figure) passes through the mirror (38) and the prism mirror (39) to cause interference in each polarizing plate (56) (57), and the beat signals are detected by the detectors (60a) (62a) respectively. To be done. Between the beat signals detected by the detectors (60a) and (62a), a phase difference proportional to the amount of displacement of the diffraction gratings (1a) and (1b) occurs. By detecting this phase difference with the phase meter of the signal processing means (70), the relative positional deviation amount between the two diffraction gratings (1a) and (1b) can be known.
以上の光ヘテロダイン位置検出方式では、各回折格子(1
a)(1b)に対する光の±n次の照射方向につき次数の絶対
値nが小さい程その信号検出範囲が広がり、その間の関
係は、 信号検出範囲=回折格子(1a)(1b)ピッチP/2n であつて、例えばnが1の場合、上記ピッチPの1/2
がその検出範囲となる。但し、検出分解能については全
くこの逆の関係が成り立ち、格子ピッチPを小さくしな
い限り、該次数の絶対値nが小さい程低くなる。そのた
め検出分解能を上げようとして各回折格子(1a)(1b)に対
する光の照射角度を変え、前記次の絶対値nを大きくす
ると、信号検出範囲は上記式より極端に狭くなる。
(尚、格子ピッチPを小さくして検出分解能を上げた場
合でも上記式より同様な結果となる)。In the above optical heterodyne position detection method, each diffraction grating (1
a) The signal detection range becomes wider as the absolute value n of the order in the ± nth irradiation direction of light with respect to (1b) increases, and the relationship between them is: signal detection range = diffraction grating (1a) (1b) pitch P / 2n, where n is 1, 1/2 of the pitch P
Is the detection range. However, the opposite relationship is true for the detection resolution, and unless the grating pitch P is reduced, the smaller the absolute value n of the order, the lower the resolution. Therefore, if the irradiation angle of the light to each diffraction grating (1a) (1b) is changed to increase the detection resolution and the absolute value n of the following is increased, the signal detection range becomes extremely narrower than the above expression.
(It should be noted that, even when the detection pitch is increased by decreasing the grating pitch P, similar results are obtained from the above equation).
従って転写線幅がクォータミクロンオーダになるシンク
ロトロン放射光リソグラフィ用アライナにおいてこのよ
うな光ヘテロダイン位置検出方式を用いてより高い位置
検出分解能を得ようとすると、信号検出範囲が非常に狭
いものとなり、実用化が困難であった。Therefore, when trying to obtain higher position detection resolution by using such an optical heterodyne position detection method in an aligner for synchrotron radiation lithography whose transfer line width is on the order of quarter micron, the signal detection range becomes very narrow, It was difficult to put it into practical use.
本発明は従来技術の以上のような問題点に鑑み創案され
たもので、必要な検出分解能を維持したまま検出範囲を
拡大できる位置検出方法及びその装置と、その位置検出
構成を用いた位置合せ装置を提供せんとするものであ
る。The present invention was devised in view of the above problems of the prior art, and is a position detection method and device capable of expanding the detection range while maintaining the necessary detection resolution, and position adjustment using the position detection configuration. It is intended to provide a device.
そのため本発明の位置検出方法は、マスク、ウェハ等の
第1の物体及び第2の物体に設けられた各回折格子に照
射されるコヒーレント光の±n次の照射方向につき次数
の絶対値nが異なる複数の照射方向からこれらの各回折
格子に夫々該コヒーレント光を照射し、これらの照射に
よって第1及び第2の回折格子から夫々垂直方向に生じ
る回折光を干渉せしめると共に、これにより生成された
各ビート信号を検出し、±n次方向からのコヒーレント
光の照射の結果垂直方向に取り出される回折光のうち前
記照射方向次数の絶対値nが等しい干渉回折光から最終
的に生成されるビート信号同士の位相差を夫々測定して
これらの各位相差に基づいて前記第1及び第2の物体の
変位量(相対的位置ずれ量のほか、他に基準ビート信号
を生成せしめてこれら2つの物体の夫々の変位量を知る
絶対的位置ずれ量でも良い)を検出する。Therefore, according to the position detecting method of the present invention, the absolute value n of the order is ± n for the ± nth irradiation direction of the coherent light with which the diffraction gratings provided on the first object and the second object such as the mask and the wafer are irradiated. Each of these diffraction gratings is irradiated with the coherent light from a plurality of different irradiation directions, and these irradiations interfere with the diffracted light generated in the vertical direction from the first and second diffraction gratings, respectively, and are generated thereby. Each beat signal is detected, and a beat signal finally generated from interference diffracted light having the same absolute value n of the irradiation direction order out of diffracted light extracted in the vertical direction as a result of irradiation of coherent light from the ± nth order The respective phase differences are measured, and the displacement amounts of the first and second objects (in addition to the relative positional displacement amount, other reference beat signals are generated based on the respective phase differences). (Absolute positional deviation amount that knows the displacement amount of each of the two objects) may be detected.
例えば、第1及び第2の物体に設けられる各回折格子の
ピッチPをある程度大きく採り、更にこれらの下記回折
格子に対し、夫々±1次の方向と±4次の方向から直交
直線偏光のわずかに異なる2周波数成分f1、f2を有
する光を照射して、±1次照射方向由来の第1及び第2
の物体からの各回折光と±4次照射方向由来の第1及び
第2の物体からの各回折光を夫々分離して、更に、これ
らの回折光の2周波成分f1、f2を干渉せしめて各ビ
ート信号を生成せしめる。そして±1次照射方向由来の
第1及び第2の物体からの各回折光によるビート信号間
の位相差を検出すれば、その信号波形は上記回折格子ピ
ッチPの1/2を周期とする線形信号となる。これに対
して±4次照射方向由来の第1及び第2の物体からの各
回折光によるビート信号間の位相差を検出すれば、上記
回折格子ピッチPの1/8を周期とする線形信号とな
る。このように後者の方は信号検出範囲が前者の1/4
となるが、信号検出分解能についてはその4倍となる。
従って2つの位相差を同時に求めれば、格子ピッチPの
1/2の範囲内で変位量が測定でき、しかも±4次照射
方向由来の回折光の持つ分解能を同時に達成できること
になる。For example, the pitch P of the diffraction gratings provided on the first and second objects is set to be relatively large, and the linear diffraction of the orthogonal linearly polarized light from the ± 1st order and ± 4th order is smaller than those of the following diffraction gratings. Are irradiated with light having two different frequency components f 1 and f 2 , and the
Each of the diffracted light from the object and the diffracted light from the first and second objects derived from the ± 4th irradiation directions are further separated, and the two frequency components f 1 and f 2 of these diffracted lights are interfered with each other. At the very least, each beat signal is generated. Then, if the phase difference between the beat signals due to the diffracted light from the first and second objects derived from the ± first-order irradiation directions is detected, the signal waveform is linear with a cycle of 1/2 of the diffraction grating pitch P. Become a signal. On the other hand, if the phase difference between the beat signals due to the diffracted light from the first and second objects originating from the ± 4th order irradiation directions is detected, a linear signal with a period of 1/8 of the diffraction grating pitch P is detected. Becomes In this way, the latter has a signal detection range of 1/4 that of the former.
However, the signal detection resolution is four times that.
Therefore, if the two phase differences are obtained at the same time, the displacement amount can be measured within the range of 1/2 of the grating pitch P, and the resolution of the diffracted light derived from the ± 4th order irradiation directions can be achieved at the same time.
更に上述した従来技術では開示されていない第1及び第
2の物体の変位量を検出する別の方法(光源から照射さ
れ第1及び第2の回折格子から夫々生じる回折光のうち
±n次回折光を干渉せしめると共に、これにより生成さ
れたビート信号を夫々検出し、これらのビート信号の位
相差を測定することでその変位量を検出する方法)に
も、本発明は適用できる。この場合は各回折格子から±
n次回折方向で取り出される回折光につき、その回折次
数ろ絶対値nが異なる複数の回折方向でこれを取り出し
て更に干渉せしめてビート信号となった干渉光を検出す
る。この検出により±n次回折光の次数の絶対値nが等
しいものから最終的に生成されるビート信号同士の位相
差を夫々測定し、これらの各位相差に基づいて第1及び
第2の物体の変位量を検出することになる。又、照射次
数や回折次数の絶対値が3つ以上の異なる値となる複数
の照射方向から照射したり、そのような複数の回折方向
から回折光の取り出しを行なって検出するようにしても
良いことは言うまでもない。Further, another method for detecting the amount of displacement of the first and second objects, which is not disclosed in the above-mentioned prior art (± n-order diffracted light among the diffracted light emitted from the light source and generated from the first and second diffraction gratings, respectively) The present invention can also be applied to a method of interfering with each other, detecting the beat signals generated thereby, and detecting the displacement amount by measuring the phase difference between these beat signals). In this case,
With respect to the diffracted light extracted in the nth diffraction direction, it is extracted in a plurality of diffraction directions having different absolute values n with respect to the diffraction orders and further interfered with each other to detect the interference light which has become a beat signal. By this detection, the phase differences between the beat signals finally generated from those having the same absolute value n of the orders of the ± n-order diffracted light are measured, and the displacements of the first and second objects are measured based on these respective phase differences. The amount will be detected. Also, irradiation may be performed from a plurality of irradiation directions in which the absolute values of the irradiation orders and the diffraction orders have three or more different values, or the diffracted light may be extracted and detected from such a plurality of diffraction directions. Needless to say.
尚、上記本発明の構成中、光の干渉を行なわしめる手段
については、上述のような偏光ビームスプリッタと偏光
板を組合せて使用する方法もあるが、偏光ビームスプリ
ッタと1/2波長板を組合せて使ったり、又はビームス
プリッタ、1/2波長板及び偏光板を組合せて使うこと
も可能である。即ち、コヒーレント光の±n次方向から
の照射を行なう場合に、偏光ビームスプリッタで取り出
されたf1成分のみ又はビームスプリッタで取り出され
たf1及びf2の両成分を有する+n次光か同じく偏光
ビームスプリッタで取り出されたf2成分のみ又はビー
ムスプリッタで取り出されたf2及びf1の両成分を有
する−n次光の一方の偏光面を1/2波長板で90゜ず
らせて各回折格子に照射し、その回折の時点で干渉せし
めることも可能である(f1、f2の両成分を有する形
で照射干渉がなされた後者の場合は、水平方向又は垂直
方向の干渉光の一方を更に偏光板でカットし、残りの干
渉光を検出することになる)し、コヒーレント光を各回
折格子に垂直に入射させ、そこから発生する回折光のう
ち±n次の回折光を取り出した場合に+n次回折光又は
−n次回折光のうち、その一方を1/2波長板で同様に
処理し、±n次回折光の検出の時点前に干渉せしめると
いうこともできる。In the configuration of the present invention described above, as a means for causing light interference, there is also a method of using a combination of the polarizing beam splitter and the polarizing plate as described above, but the polarizing beam splitter and the 1/2 wavelength plate are combined. It is also possible to use a beam splitter, a half wave plate and a polarizing plate in combination. That is, when irradiating the coherent light from the ± n-order directions, the + n-order light having only the f 1 component extracted by the polarization beam splitter or both the f 1 and f 2 components extracted by the beam splitter is the same. Having only the f 2 component extracted by the polarization beam splitter or both f 2 and f 1 components extracted by the beam splitter, one polarization plane of the −n-order light is shifted by 90 ° with a 1/2 wavelength plate for each diffraction It is also possible to irradiate the grating and cause interference at the time of diffraction (in the latter case where irradiation interference is made in a form having both components of f 1 and f 2 , one of the interference light in the horizontal direction or the vertical direction). Is further cut by a polarizing plate to detect the remaining interference light), and the coherent light is made incident vertically on each diffraction grating, and the ± nth order diffracted light is extracted from the diffracted light generated from it. If the + n of order diffracted light or -n-order diffracted light, while the treated similarly with half-wave plate, it is also possible that allowed to interfere before the time of detection of ± n order diffracted light.
次に第2及び第3発明の位置検出装置は上記第1発明の
位置検出方法の実施装置に係り、第2発明装置は回折光
を垂直方向で取り出す場合の構成、及び第3発明装置は
回折光を±n次回折方向で取り出す場合の構成である。
即ち、第2発明装置は、第1の物体に設けた第1の回折
格子と、第2の物体に設けた第2の回折格子と、わずか
に異なる2周波数のコヒーレント光を発生させる光源
と、該光源から発生したコヒーレント光を前記第1及び
第2の回折格子の夫々に対して±n次の方向から入射さ
せる入射角調整手段と、各回折格子で照射光が回折する
時点で又は各回折格子から垂直方向に夫々取り出される
回折光の光路途中で2周波成分を干渉せしめてビート信
号を生成する光干渉手段と、第1及び第2の回折格子か
ら垂直方向に夫々取り出され、且つ前記光干渉手段によ
って生成されたビート信号を夫々検出する検出手段と、
これらのビート信号からその位相差を測定してこの位相
差に基づき前記第1及び第2の物体の変位量を検出する
信号処理手段を有する位置検出装置において、前記入射
角調整手段による各回折格子に対する±n次方向からの
コヒーレント光の照射につき次数の絶対値nが異なる複
数の方向からこれらの各回折格子に夫々照射できるよう
にすると共に、前記検出手段についてもこれらの照射方
向に対応させて各ビート信号の検出ができるようにし、
更に前記信号処理手段についても±n次方向からのコヒ
ーレント光の照射の結果垂直方向に取り出される回折光
のうち前記照射方向次数の絶対値nが等しい回折光から
最終的に生成されるビート信号同士の位相差を夫々測定
し、これらの各位相差に基づき前記第1及び第2の物体
の変位量を検出するようにしたことを基本的特徴として
いる。又第3発明装置では光の入射を垂直方向から行な
い、回折光の取り出しを±n次回折方向で行なう構成と
しているため、第2発明装置のような入射角調整手段は
なく、各回折格子から生じる回折光のうち±n次の回折
光を取り出すミラーや偏光ビームスプリッタ等の回折光
取り出し手段を備え、且つ光干渉手段については、回折
光の取り出し光路途中で2周波成分の干渉を行なわしめ
る装置構成としている。そしてこれらの構成を前提構成
として第3発明は回折光取り出し手段により各回折格子
から±n次回折方向で取り出される回折光につき、その
回折次数の絶対値nが異なる複数の回折方向でこれを取
り出すと共に、前記検出手段についてもこれらの回折光
取り出し方向に対応させて各ビート信号の検出ができる
ようにし、更に前記信号処理手段についても、検出手段
によりビート信号として検出された各回折光のうち次数
の絶対値nが等しいものから最終的に生成されるビート
信号同士の位相差を夫々測定し、これらの各位相差に基
づき前記第1及び第2の物体の変位量を検出するように
している。Next, the position detecting devices of the second and third inventions are related to the device for executing the position detecting method of the first invention, the second invention device is a structure for extracting diffracted light in the vertical direction, and the third invention device is a diffraction device. This is a configuration for extracting light in the ± n-order diffraction directions.
That is, the second invention device includes a first diffraction grating provided on the first object, a second diffraction grating provided on the second object, and a light source for generating coherent light of two slightly different frequencies, Incident angle adjusting means for making coherent light generated from the light source incident on the first and second diffraction gratings from the ± nth order, and at the time when the irradiation light is diffracted by each diffraction grating or each diffraction Optical interference means for generating a beat signal by interfering two frequency components in the optical paths of the diffracted light respectively extracted from the grating in the vertical direction, and the optical interference means extracted from the first and second diffraction gratings in the vertical direction, respectively. Detection means for detecting the beat signals generated by the interference means,
In a position detecting device having signal processing means for measuring the phase difference from these beat signals and detecting the displacement amount of the first and second objects based on this phase difference, each diffraction grating by the incident angle adjusting means With respect to the irradiation of coherent light from the ± n-th order with respect to, it is possible to respectively irradiate each of these diffraction gratings from a plurality of directions having different absolute values n of the order, and the detection means also corresponds to these irradiation directions. To be able to detect each beat signal,
Furthermore, regarding the signal processing means, beat signals finally generated from diffracted light having the same absolute value n of the irradiation direction order among diffracted light extracted in the vertical direction as a result of irradiation of coherent light from the ± nth order. The basic feature is that the phase differences of the first and second objects are detected based on the respective phase differences. Further, in the third invention device, since the light is incident in the vertical direction and the diffracted light is extracted in the ± n-order diffraction directions, there is no incident angle adjusting means unlike the second invention device, and each diffraction grating is used. A device provided with diffracted light extraction means such as a mirror and a polarization beam splitter for extracting ± n-order diffracted light from the generated diffracted light, and for the optical interference means, an apparatus for interfering two frequency components in the optical path of the diffracted light extraction. It is configured. Then, based on these configurations, the third invention takes out the diffracted light extracted from each diffraction grating in the ± n-order diffracting directions by the diffracted light extracting means in a plurality of diffracting directions having different absolute values n of the diffraction orders. Along with the detection means, each beat signal can be detected in correspondence with the diffracted light extraction direction. Further, the signal processing means also has an order of each diffracted light detected as a beat signal by the detection means. The phase differences between the beat signals finally generated from those having the same absolute value n are measured, and the displacement amounts of the first and second objects are detected based on the respective phase differences.
更に、第4及び第5発明の位置合せ装置は、第2及び第
3発明の位置検出装置を基に更にその装置構成を第1の
物体と第2の物体の位置合せができるような構成まで発
展改良させたものであり、それに固有な構成は、第1の
物体及び/又は第2の物体を動かす移動機構を備えると
共に、測定された位相差から第1の物体と第2の物体の
位置検出を行なう信号処理手段を単に備えるというので
はなく、その位相差に基づき前記移動機構に制御信号を
出力し、第1の物体及び/又は第2の物体を動かして位
置合せする信号処理制御手段を備えるものであり、その
他の構成は第2発明及び第3発明の構成と同じである。Further, the positioning device of the fourth and fifth inventions is based on the position detecting device of the second and third inventions, and further has a device configuration such that the first object and the second object can be positioned. It is a development and improvement, and the structure unique to the development includes a moving mechanism for moving the first object and / or the second object, and the position of the first object and the second object based on the measured phase difference. Signal processing control means for outputting a control signal to the moving mechanism based on the phase difference and moving the first object and / or the second object for alignment, rather than simply including signal processing means for detecting The other configurations are the same as the configurations of the second invention and the third invention.
以下本発明の具体的実施例につき添付図面を基に説明す
る。Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
第1図は、シンクロトロン放射光露光装置において第1
の物体たるマスクAと第2の物体たるウェハBの位置合
せに用いられた第5発明に係る位置合せ装置構成の概略
を示すもので、図中マスク及びウェハの各移動機構につ
いては、夫々マスクステージ(8a)とウェハステージ(8b)
を示すだめでその他の構成は省略されている。FIG. 1 shows the first part of the synchrotron radiation exposure apparatus.
FIG. 3 is a schematic view of the arrangement of the alignment apparatus according to the fifth aspect of the present invention used for aligning the mask A as the object and the wafer B as the second object. Stage (8a) and wafer stage (8b)
, And other components are omitted.
本実施例では、マスクA上及びウェハB上に設けられた
マスク回折格子(1a)及びウェハ回折格子(1b)と、シリン
ダレンズ(20)及びミラー(21)を介して両回折格子(1a)(1
b)に対して垂直方向からレーザ光(2周波コヒーレント
光)を照射せしめる横ゼーマンレーザからなる光源(2)
と、前記マスクステージ(8a)及びウェハステージ(8b)の
みを示した移動機構と、この照射によって両回折格子(1
a)(1b)から生じる回折光のうち±1次回折光を取り出す
ミラー(30)(31)及び±4次回折光を取り出すミラー(32)
(33)の回折光取り出し手段と、該ミラー(31)(33)で−1
次並びに−4次方向で取り出された回折光の偏光面を9
0゜ずらす1/2波長板(50)(51)及び前記ミラー(30)(3
2)で取り出された+1次回折光と+4次回折光がこの9
0゜偏光面のずらされた−1次回折光と−4次回折光と
干渉し合い更にそこで偏光せしめられることになる偏光
ビームスプリッタ(52)(53)からなる光干渉手段と、マス
ク回折格子(1a)側から取り出されてくる±1次及び±4
次回折光の干渉光のナイフエッジミラー(34)(35)で反射
せしめて受光し、その干渉光から生じる±1次回折光由
来のビート信号と±4次回折光由来のビート信号を検出
するマスク1次光ディテクタ(60)及びマスク4次光ディ
テクタ(61)、更にウェハ回折格子(1b)側から取り出され
てくる±1次及び±4次回折光の干渉光を受光し、その
干渉光から生ずる±1次回折光由来のビート信号と±4
次回折光由来のビート信号を検出するウェハ1次光デイ
テクタ(62)及びウェハ4次光ディテクタ(63)からなる検
出手段と、これらの各検出手段で検出されたビート信号
を入力し、±1次回折光に由来するビート信号間の位相
差及び±4次回折光に由来するビート信号間の位相差を
測定し、これらの位相差に基づいて前記移動機構に制御
信号を出力する信号処理制御回路(7)とを有している。In this embodiment, the mask diffraction grating (1a) and the wafer diffraction grating (1b) provided on the mask A and the wafer B, and both diffraction gratings (1a) via the cylinder lens (20) and the mirror (21). (1
Light source (2) consisting of a transverse Zeeman laser that irradiates laser light (two-frequency coherent light) perpendicular to b)
And a moving mechanism showing only the mask stage (8a) and the wafer stage (8b), and both diffraction gratings (1
Mirrors (30) and (31) for extracting ± 1st-order diffracted light and a mirror (32) for extracting ± 4th-order diffracted light among diffracted light generated from a) and (1b)
-1 with the diffracted light extraction means of (33) and the mirrors (31) and (33)
The polarization planes of the diffracted light extracted in the second and fourth order are
1/2 wave plate (50) (51) and the mirror (30) (3)
The + 1st-order diffracted light and the + 4th-order diffracted light extracted in 2) are
Optical interference means consisting of polarization beam splitters (52) and (53) that interfere with the -1st-order diffracted light and the -4th-order diffracted light whose polarization planes are shifted by 0 ° and are polarized there, and a mask diffraction grating (1a). ) Side is taken out ± 1st order and ± 4
First-order mask for detecting beat signals derived from ± 1st-order diffracted light and beat signals derived from ± 4th-order diffracted light, which are received by reflecting the interference light of the second-order diffracted light by knife edge mirrors (34) (35) The photodetector (60), the mask fourth-order photodetector (61), and the ± 1st and ± 4th-order diffracted light extracted from the wafer diffraction grating (1b) side are received, and ± 1 generated from the interference light is received. Beat signal from the 4th order diffracted light and ± 4
± 1 next time is input by inputting the detection means including the wafer first-order photodetector (62) and the wafer fourth-order photodetector (63) for detecting the beat signal derived from the second-order diffracted light and the beat signal detected by each of these detection means. A signal processing control circuit (7) that measures the phase difference between the beat signals originating from the folded light and the phase difference between the beat signals originating from the ± 4th order diffracted light, and outputs a control signal to the moving mechanism based on these phase differences. ) And have.
尚、上記装置構成において、マスク回折格子(1a)とウェ
ハ回折格子(1b)は格子長手方向にわずかにずれている。
又、マスクA面には光透過窓(1c)が設けられており、ウ
ェハ回折格子(1b)に対する前記コヒーレント光の照射と
該回折格子(1b)からの回折光の取り出しはこの光透過窓
(1c)を介してなされている。更に前記信号処理制御回路
(7)には測定された各位相差を表示する位相計(図示な
し)も同時に設置されている。In the above device configuration, the mask diffraction grating (1a) and the wafer diffraction grating (1b) are slightly displaced in the grating longitudinal direction.
Further, a light transmission window (1c) is provided on the surface of the mask A. The irradiation of the coherent light to the wafer diffraction grating (1b) and the extraction of the diffracted light from the diffraction grating (1b) are performed by this light transmission window.
This is done via (1c). Further, the signal processing control circuit
A phase meter (not shown) that displays each measured phase difference is also installed at (7).
以上の装置構成の使用方法を次に説明する。A method of using the above device configuration will be described below.
上記光源(2)の横ゼーマンレーザは、2周波成分f1、
f2を含んだ光を発生し、このコヒーレント光を垂直方
向からマスク回折格子(1a)及びウェハ回折格子(1b)に夫
々照射する。この時、ウェハ回折格子(1b)に対しては前
記光透過窓(1c)を通って照射されることになる。この照
射によって両回折格子(1a)(1b)には第2図に示すような
各方向に回折光が生じ、そのうち±1次回折光をミラー
(30)(31)で又±4次回折光をミラー(32)(33)で偏光ビー
ムスプリッタ(52)(53)方向に反射せしめ、そこからその
一部はナイフエッジミラー(34)(35)を介してマスク1次
光ディテクタ(60)及びマスク4次光ディテクタ(61)に、
又残りはウェハ1次光ディテクタ(62)及びウェハ4次光
ディテクタ(63)に達し、そこで受光される。上記回折光
のうち、ミラー(31)(33)によって反射せしめられた−1
次回折光と−4次回折光はその途中1/2波長板(50)(5
1)によってその偏光面を90゜ずらされる(垂直成分は
水平に、又水平成分は垂直にずらされる)ため、偏光ビ
ームスプリッタ(52)(53)で夫々+1次回折光及び+4次
回折光と干渉し合い、干渉光となる。このため各ディテ
クタ(60)(61)(62)(63)では該干渉光で生成されたビート
信号が検出され、信号処理制御回路(7)にこれらビート
信号が送られる。該回路(7)では、マスク1次光ディテ
クタ(60)より送られてくるビート信号と、ウェハ1次光
ディテクタ(62)より送られてくるビート信号の位相差が
測定され、第3図(a)に示されるような信号波形が得ら
れることになる。又同じくこの信号処理制御回路(7)に
はマスク4次光ディテクタ(61)より送られてくるビート
信号とウェハ4次光ディテクタ(63)より送られてくるビ
ート信号の位相差が測定され、同図(b)に示されるよう
な信号波形が得られる。第3図(a)に示された信号波形
では、回折格子1/2ピッチを周期とする線形信号とな
り、同図(b)のそれでは、回折格子1/8ピッチを周期と
する線形信号となる。このように信号処理制御回路(7)
では、±1次回折光由来のビート信号の位相差と、±4
次回折光由来のビート信号の位相差を検出しているの
で、回折格子1/2ピッチの範囲内でマスクAとウェハ
Bの相対的な位置ずれ量が測定でき、しかも±4次回折
光の持つ分解能〔位相計分解能を1゜程度とすると、そ
の分解能は(P/8)/360゜ということになり、±1
次回折光の分解能の4倍になる〕を同時に達成できるこ
とになる。The transverse Zeeman laser of the light source (2) has a two-frequency component f 1 ,
Light including f 2 is generated, and this coherent light is applied to the mask diffraction grating (1a) and the wafer diffraction grating (1b) from the vertical direction. At this time, the wafer diffraction grating (1b) is irradiated through the light transmission window (1c). This irradiation produces diffracted light in both directions on both diffraction gratings (1a) and (1b) as shown in FIG.
At (30) and (31), the ± 4th order diffracted light is reflected by the mirrors (32) and (33) in the direction of the polarization beam splitters (52) and (53), and a part of the reflected light is knife edge mirrors (34) and (35). To the mask primary photodetector (60) and the mask quaternary photodetector (61) via
The rest reaches the wafer primary photodetector (62) and the wafer quaternary photodetector (63) and is received there. Of the diffracted light, it was reflected by the mirrors (31) (33) -1
The 1st and 2nd order diffracted light and the −4th order diffracted light are on the way.
Because the plane of polarization is shifted by 90 degrees (vertical component is horizontal and horizontal component is vertical) by 1), the polarized beam splitters (52) and (53) interfere with + first-order diffracted light and + 4th-order diffracted light, respectively. It becomes an interference light. Therefore, the detectors (60) (61) (62) (63) detect the beat signals generated by the interference light and send the beat signals to the signal processing control circuit (7). In the circuit (7), the phase difference between the beat signal sent from the mask primary photodetector (60) and the beat signal sent from the wafer primary photodetector (62) is measured, and FIG. The signal waveform as shown in a) will be obtained. Similarly, the signal processing control circuit (7) measures the phase difference between the beat signal sent from the mask quaternary photodetector (61) and the beat signal sent from the wafer quaternary photodetector (63). A signal waveform as shown in FIG. The signal waveform shown in FIG. 3 (a) is a linear signal having a period of the diffraction grating 1/2 pitch, and that of FIG. 3 (b) is a linear signal having a period of the diffraction grating 1/8 pitch. . In this way the signal processing control circuit (7)
Then, the phase difference of the beat signal derived from ± 1st order diffracted light and ± 4
Since the phase difference of the beat signal derived from the second-order diffracted light is detected, the relative positional deviation amount between the mask A and the wafer B can be measured within the range of the diffraction grating 1/2 pitch, and the resolution of the ± 4th-order diffracted light is measured. [If the phase meter resolution is about 1 °, the resolution will be (P / 8) / 360 °, ± 1
4 times the resolution of the next-order diffracted light].
第4図は同じくシンクロトロン放射光露光装置のマスク
AとウェハBの位置合せ用に使用された第4発明の位置
合せ装置の実施例構成を示している。FIG. 4 also shows an embodiment of the alignment apparatus of the fourth invention used for aligning the mask A and the wafer B of the synchrotron radiation exposure apparatus.
本実施例装置構成では、横ゼーマンレーザの光源(2)よ
り発せらた2周波成分f1、f2を有するコヒーレント
光をハーフミラー(22)によりその一部は偏光ビームスプ
リッタ(40)側に、又その残りはミラー(23)を介して別の
偏光ビームスプリッタ(41)側に進入せしめ、両偏光ビー
ムスプリッタ(40)(41)により夫々上記コヒーレント光を
f1成分とf2成分を有する光に分離し、更に夫々ミラ
ー(42)(43)とミラー(44)(45)でマスク回折格子(1a)とウ
ェハ回折格子(1b)に対して夫々±1次方向と±4次方向
より照射する。この時第5図に示されるようにf1成分
の光は1/2波長板(50)(51)によってその偏波面が90
゜ずらされ、ミラー(42)(44)により各回折格子(1a)(1b)
に対し、+1次方向及び+4次方向から照射される。又
本実施例では±1次方向からの照射で生じる回折光と±
4次方向からの照射で生じる回折光がいずれも垂直方向
に生ずることになり重なってしまうため、第5図の丁度
真横から見た状態を示す第6図に示されるように、±1
次方向の照射と±4次方向の照射を角度を異ならしめな
がら斜入射させることにより、回折光の取り出しをその
斜入射角度に対応せしめた方向で行なえる(斜方検出が
できる)ようにしている。In the device configuration of this embodiment, coherent light having two frequency components f 1 and f 2 emitted from the light source (2) of the transverse Zeeman laser is partially reflected by the half mirror (22) toward the polarization beam splitter (40). Also, the rest is made to enter the side of another polarization beam splitter (41) through the mirror (23), and both polarization beam splitters (40) and (41) respectively have the above-mentioned coherent light with f 1 component and f 2 component. The light is separated into light, and the mirrors (42) (43) and mirrors (44) (45) respectively separate the mask diffraction grating (1a) and the wafer diffraction grating (1b) from the ± 1st order and ± 4th order directions, respectively. Irradiate. At this time, as shown in FIG. 5, the light of the f 1 component has a polarization plane of 90 degrees by the half-wave plates (50) and (51).
Shifted by the mirrors (42) and (44), each diffraction grating (1a) (1b)
On the other hand, the light is emitted from the + 1st order and + 4th order. Further, in this embodiment, the diffracted light generated by irradiation from the ± first-order directions and the ±
Since all the diffracted light generated by irradiation from the fourth order is generated in the vertical direction and overlaps each other, as shown in FIG. 6 showing a state just from the side of FIG. 5, ± 1
By irradiating the second direction irradiation and the ± 4th order irradiation at different angles, the diffracted light can be extracted in the direction corresponding to the oblique incident angle (oblique detection is possible). There is.
以上のようにして照射された光は各回折格子(1a)(1b)で
回折した時点で光ヘテロダイン干渉光となってミラー(3
6)(37)及びナイフエッジミラー(34)(35)を介してマスク
1次光ディテクタ(60)及びウェハ1次光ディテクタ(62)
とマスク4次光ディテクタ(61)及びウェハ4次光ディテ
クタ(63)にビート信号として夫々検出される。The light emitted as described above becomes optical heterodyne interference light when diffracted by the diffraction gratings (1a) and (1b).
6) (37) and knife edge mirrors (34) (35) through mask primary photodetector (60) and wafer primary photodetector (62)
And the mask quaternary photodetector (61) and the wafer quaternary photodetector (63) are detected as beat signals, respectively.
更に検出された各ビート信号は信号処理制御回路(7)に
入力され、±1次照射光に由来するビート信号の位相差
と±4次照射光に由来するビート信号の位相差を夫々測
定して、マスクAとウェハB間の相対的位置ずれ量を各
々検出する。得られる位相差の信号波形は前実施例の第
3図(a)(b)に示されたものと同じになり、そのためその
詳細については省略する。Further, each detected beat signal is input to the signal processing control circuit (7), and the phase difference of the beat signal derived from the ± 1st order irradiation light and the phase difference of the beat signal derived from the ± 4th order irradiation light are measured respectively. Then, the relative positional deviation amount between the mask A and the wafer B is detected. The obtained signal waveform of the phase difference is the same as that shown in FIGS. 3 (a) and 3 (b) of the previous embodiment, and therefore its details are omitted.
尚、以上本発明で使用される回折格子のタイプは、反射
型、透過型、振幅型、位相型等種々のものが使用可能で
ある。又光源についても、横ゼーマンレーザのほか、横
ゼーマンレーザと1/4波長板の組合せ、及び安定化レ
ーザと周波数シフタの組合せ等が可能である。更に以上
の実施例で示したものはマスク回折格子とウェハ回折格
子から得られる各回折光をビート信号に変換して各ビー
ト信号の位相差を測定したものであり、これにより得ら
れるマスクとウェハの変位量は相対的なものであるが、
別に基準ビート信号の採り、これに対してマスク及びウ
ェハが夫々どの程度ずれているかを測定する絶対位置ず
れ検出方式を採用することもできる。As the type of the diffraction grating used in the present invention, various types such as a reflection type, a transmission type, an amplitude type and a phase type can be used. As for the light source, a horizontal Zeeman laser, a combination of a horizontal Zeeman laser and a 1/4 wavelength plate, a combination of a stabilizing laser and a frequency shifter, and the like are possible. Further, what is shown in the above embodiment is one in which each diffracted light obtained from the mask diffraction grating and the wafer diffraction grating is converted into a beat signal and the phase difference of each beat signal is measured. The displacement of is relative,
Alternatively, it is possible to adopt an absolute position deviation detection method in which a reference beat signal is taken and how much the mask and the wafer are respectively deviated from the reference beat signal.
以上詳述したように本発明法並びに装置によれば、光ヘ
テロダイン位置検出方式の必要な検出分解能を高く維持
したまま、この分解能とは相反する関係にある検出範囲
をこれまでとは逆に著しく拡大することができ、そのた
め第1の物体と第2の物体のクォータミクロン範囲の微
小変位の検出が可能で、且つその検出によって位置合せ
精度も飛躍的に向上せしめることができるようになる。As described above in detail, according to the method and the device of the present invention, while maintaining the required detection resolution of the optical heterodyne position detection system at a high level, the detection range having a reciprocal relationship with this resolution is conspicuously opposite to the conventional one. Therefore, it is possible to detect the minute displacement of the first object and the second object in the quarter micron range, and the detection accuracy can be remarkably improved.
第1図は第5発明の位置合せ装置の一実施例に係る構成
を示す概略図、第2図は本実施例において各回折格子で
の回折光の発生状況を示す説明図、第3図(a)(b)は本実
施例において各位相差の検出の結果得られた位相計の信
号波形を示す図、第4図は第4発明の位置合せ装置の実
施例構成を示す概略図、第5図は本実施例の装置正面か
ら見た照射光の照射状況を示す正面図、第6図は前図の
丁度真横から見た照射光の斜入射状況及び回折光の斜方
検出状況を示す側面図、第7図は従来の光ヘテロダイン
位置検出方式の説明図である。 図中、Aはマスク、Bはウェハ、(1a)はマスク回折格
子、(1b)はウェハ回折格子、(2)は光源、(30)(31)(32)
(33)(42)(42a)(43)(43a)(44)(45)はミラー、(40)(41)(5
2)(53)は偏光ビームスプリッタ、(50)(51)(54)(55)は1
/2波長板、(60)(60a)(61)(62)(62a)(63)はディテク
タ、(7)は信号処理制御回路を各示す。FIG. 1 is a schematic diagram showing a configuration according to an embodiment of an alignment apparatus of the fifth invention, FIG. 2 is an explanatory view showing a state of generation of diffracted light at each diffraction grating in this embodiment, and FIG. a) and (b) are diagrams showing signal waveforms of the phase meter obtained as a result of detection of each phase difference in the present embodiment, and FIG. 4 is a schematic diagram showing an embodiment configuration of the alignment apparatus of the fourth invention, and FIG. The figure is a front view showing the irradiation state of the irradiation light seen from the front of the apparatus of the present embodiment, and FIG. 6 is a side view showing the oblique incident state of the irradiation light and the oblique detection state of the diffracted light seen just from the side of the previous figure. FIG. 7 and FIG. 7 are explanatory views of a conventional optical heterodyne position detection method. In the figure, A is a mask, B is a wafer, (1a) is a mask diffraction grating, (1b) is a wafer diffraction grating, (2) is a light source, (30), (31) and (32).
(33) (42) (42a) (43) (43a) (44) (45) are mirrors, (40) (41) (5
2) (53) is the polarization beam splitter, (50) (51) (54) (55) is 1
/ 2 wave plate, (60) (60a) (61) (62) (62a) (63) is a detector, and (7) is a signal processing control circuit.
Claims (5)
を、第1の回折格子を有する第1の物体と第2の回折格
子を有する第2の物体に垂直方向から照射し又はこれら
第1及び第2の物体に夫々±n次の方向から照射するこ
とにより、第1及び第2の回折格子から夫々生じる±n
次回折光を取出し又はこれら各回折格子から夫々垂直方
向に生じる回折光を取出し、且つ前記回折時点で又は回
折光路途中で2周波成分を干渉せしめてビート信号を夫
々生成し、これらのビート信号の位相差を測定すること
で前記第1及び第2の物体の変位量を検出する位置検出
方法において、各回折格子から±n次回折方向で取り出
される回折光につき、その回折次数の絶対値nが異なる
複数の回折方向でこれを取り出して更に干渉せしめてこ
の干渉光を検出し、又は各回折格子に対する前記コヒー
レント光の±n次からの照射方向につき次数の絶対値n
が異なる複数の照射方向となるようにこれらの回折格子
に夫々照射してこれらの照射によって第1及び第2の回
折格子から垂直方向に夫々取り出された回折光を干渉さ
せることにより各ビート信号を生成せしめて、±n次回
折光の次数の絶対値nが等しいものから最終的に生成さ
れるビート信号同士の位相差又は±n次方向からのコヒ
ーレント光の照射の結果垂直方向に取り出されて干渉光
にされた回折光のうち前記照射方向次数の絶対値nが等
しい干渉回折光から最終的に生成されるビート信号同士
の位相差を夫々測定してこれらの各位相差に基づいて前
記第1及び第2の物体の変位量を検出する位置検出方
法。1. A first object having a first diffraction grating and a second object having a second diffraction grating are irradiated with coherent light beams having two slightly different frequencies from a vertical direction, or the first and the second objects. By irradiating the second object from the directions of ± nth order, ± n generated respectively from the first and second diffraction gratings.
The next diffracted light is taken out or the diffracted light generated in the vertical direction is taken out from each of these diffraction gratings, and two frequency components are interfered at the time of the diffraction or in the diffracted light path to generate beat signals, respectively. In the position detecting method for detecting the displacement amount of the first and second objects by measuring the phase difference, the absolute value n of the diffraction order is different for the diffracted light extracted from each diffraction grating in the ± nth diffraction direction. This is taken out in a plurality of diffraction directions and further interfered to detect the interference light, or the absolute value n of the order for each irradiation direction from the ± nth order of the coherent light to each diffraction grating.
To each of the diffraction gratings so as to have a plurality of different irradiation directions, and by interfering with the diffracted lights vertically extracted from the first and second diffraction gratings by these irradiations, each beat signal is generated. The phase difference between beat signals finally generated from those having the same absolute value n of the order of ± n-order diffracted light or the result of irradiation of coherent light from the ± n-order directions is extracted in the vertical direction and interferes. Of the diffracted light converted into light, the phase difference between the beat signals finally generated from the interference diffracted light having the same absolute value n of the irradiation direction order is measured, and the first and second phase differences are measured based on the respective phase differences. A position detecting method for detecting a displacement amount of a second object.
2の物体に設けた第2の回折格子と、わずかに異なる2
周波数のコヒーレント光を発生させる光源と、該光源か
ら照射されたコヒーレント光を前記第1及び第2の回折
格子の夫々に対して±n次の方向から入射させる入射角
調整手段と、各回折格子で照射光が回折する時点で又は
各回折格子から垂直方向に夫々取り出される回折光の光
路途中で2周波成分を干渉せしめて干渉光とする光干渉
手段と、第1及び第2の回折格子から垂直方向に夫々取
り出され、且つ前記光干渉手段によって生成されたビー
ト信号を夫々検出する検出手段と、これらのビート信号
からその位相差を測定してこの位相差に基づき前記第1
及び第2の物体の変位量を検出する信号処理手段を有す
る位置検出装置において、前記入射角調整手段による各
回折格子に対する±n次方向からのコヒーレント光の照
射につき次数の絶対値nが異なる複数の方向からこれら
の各回折格子に夫々照射できるようにすると共に、前記
検出手段についてもこれらの照射方向に対応させて各ビ
ート信号の検出ができるようにし、更に前記信号処理手
段についても±n次方向からのコヒーレント光の照射の
結果垂直方向に取り出される回折光のうち前記照射方向
次数の絶対値nが等しい回折光から最終的に生成される
ビート信号同士の位相差を夫々測定し、これらの各位相
差に基づき前記第1及び第2の物体の変位量を検出する
ようにしたことを特徴とする位置検出装置。2. A first diffraction grating provided on a first object and a second diffraction grating provided on a second object, which are slightly different from each other.
A light source for generating coherent light of a frequency, an incident angle adjusting means for causing the coherent light emitted from the light source to be incident on each of the first and second diffraction gratings from directions of ± nth order, and each diffraction grating At the time when the irradiation light is diffracted, or in the optical path of the diffracted light extracted in the vertical direction from each diffraction grating, the optical interference means for interfering the two frequency components to form the interference light, and the first and second diffraction gratings Detecting means for respectively detecting the beat signals respectively taken out in the vertical direction and generated by the optical interference means, and measuring the phase difference from these beat signals, and based on this phase difference, the first
And a position detecting device having a signal processing means for detecting the displacement amount of the second object, a plurality of different absolute values n of the orders for the irradiation of the coherent light from the ± nth directions to the diffraction gratings by the incident angle adjusting means. The respective diffraction signals can be emitted from the respective directions, and the detection means can also detect each beat signal corresponding to these irradiation directions. Further, the signal processing means can also have ± nth order. Of the diffracted light extracted in the vertical direction as a result of the irradiation of the coherent light from the direction, the phase difference between the beat signals finally generated from the diffracted light having the same absolute value n of the irradiation direction order is measured. A position detecting device, wherein the displacement amount of the first and second objects is detected based on each phase difference.
2の物体に設けた第2の回折格子と、わずかに異なる2
周波数のコヒーレント光を発生させる光源と、該光源か
ら発生したコヒーレント光を前記第1及び第2の回折格
子の夫々に照射した時にこれらの回折格子から生ずる回
折光のうち±n次回折光の取り出しを行なう回折光取り
出し手段と、前記回折光の取り出し光路途中で2周波成
分を干渉せしめて干渉光とする光干渉手段と、前記回折
光取り出し手段によって取り出され且つ光干渉手段によ
って生成されたビート信号を夫々検出する検出手段と、
これらのビート信号からその位相差を測定してこの位相
差に基づき前記第1及び第2の物体の変位量を検出する
信号処理手段を有する位置検出装置において、前記回折
光取り出し手段により各回折格子から±n次回折方向で
取り出される回折光につき、その回折次数の絶対値nが
異なる複数の回折方向でこれを取り出すと共に、前記検
出手段についてもこれらの回折光取り出し方向に対応さ
せて各ビート信号の生成ができるようにし、更に前記信
号処理手段についても、検出手段により検出された各回
折光のうち次数の絶対値nが等しいものから最終的に生
成されるビート信号同士の位相差を夫々測定し、これら
の各位相差に基づき前記第1及び第2の物体の変位量を
検出するようにしたことを特徴とする位置検出装置。3. A first diffraction grating provided on a first object and a second diffraction grating provided on a second object, which are slightly different from each other.
A light source for generating coherent light of a frequency and a ± n-order diffracted light out of the diffracted light generated by these diffraction gratings when the coherent light generated by the light source is applied to each of the first and second diffraction gratings. The diffracted light extraction means for performing, the optical interference means for interfering the two frequency components into the interference light in the optical path for extracting the diffracted light, and the beat signal extracted by the diffracted light extraction means and generated by the optical interference means Detection means for detecting each,
In a position detecting device having a signal processing means for measuring the phase difference from these beat signals and detecting the amount of displacement of the first and second objects based on this phase difference, each diffraction grating is obtained by the diffracted light extraction means. Of the diffracted light extracted in the ± n-order diffracted directions from the above, it is extracted in a plurality of diffracted directions in which the absolute values n of the diffracted orders are different, and the detection means also corresponds to these diffracted light extracted directions and each beat signal. And the signal processing means also measures the phase difference between the beat signals finally generated from the diffracted light detected by the detection means having the same absolute value n of the order. Then, the position detecting device is characterized in that the displacement amounts of the first and second objects are detected based on the respective phase differences.
2の物体に設けた第2の回折格子と、第1の物体及び/
又は第2の物体を動かす移動機構と、わずかに異なる2
周波数のコヒーレント光を発生させる光源と、該光源か
ら照射されたコヒーレント光を前記第1及び第2の回折
格子の夫々に対して±n次の方向から入射させる入射角
調整手段と、各回折格子で照射光が回折する時点で又は
各回折格子から垂直方向に夫々取り出される回折光の光
路途中で2周波成分を干渉せしめて干渉光とする光干渉
手段と、第1及び第2の回折格子から垂直方向に夫々取
り出され、且つ前記光干渉手段によって生成されたビー
ト信号を夫々検出する検出手段と、これらのビート信号
からその位相差を測定してこの位相差に基づき前記移動
機構に制御信号を出力し、第1の物体及び/又は第2の
物体を動かして位置合せする信号処理制御手段を有する
位置合せ装置において、前記入射角調整手段による各回
折格子に対する±n次方向からのコヒーレント光の照射
につき次数の絶対値nが異なる複数の方向からこれらの
各回折格子に夫々照射できるようにすると共に、前記検
出手段についてもこれらの照射方向に対応させて各ビー
ト信号の検出ができるようにし、更に前記信号処理制御
手段についても±n次方向からのコヒーレント光の照射
の結果垂直方向に取り出される回折光のうち前記照射方
向次数の絶対値nが等しい回折光から最終的に生成され
るビート信号同士の位相差を夫々測定し、これらの各位
相差に基づいて前記移動機構に対し制御信号を出力する
ようにしたことを特徴とする位置合せ装置。4. A first diffraction grating provided on a first object, a second diffraction grating provided on a second object, a first object and / or
Or slightly different from the moving mechanism that moves the second object 2
A light source for generating coherent light of a frequency, an incident angle adjusting means for causing the coherent light emitted from the light source to be incident on each of the first and second diffraction gratings from directions of ± nth order, and each diffraction grating At the time when the irradiation light is diffracted, or in the optical path of the diffracted light extracted in the vertical direction from each diffraction grating, the optical interference means for interfering the two frequency components to form the interference light, and the first and second diffraction gratings Detecting means for extracting the beat signals respectively generated in the vertical direction and detecting the beat signals generated by the optical interference means, measuring the phase difference from these beat signals, and sending a control signal to the moving mechanism based on this phase difference. In the alignment device having signal processing control means for outputting and aligning by moving the first object and / or the second object, ± n for each diffraction grating by the incident angle adjusting means With respect to the irradiation of coherent light from the next direction, each of these diffraction gratings can be irradiated from a plurality of directions having different absolute values n of the order, and the beat signal of each of the detecting means is also made to correspond to these irradiation directions. Of the diffracted light extracted in the vertical direction as a result of the irradiation of the coherent light from the ± n-order directions, the signal processing control means also determines from the diffracted light having the same absolute value n of the irradiation direction order to the final one. The alignment device is characterized in that the phase difference between the beat signals generated in this way is measured, and a control signal is output to the moving mechanism based on these phase differences.
2の物体に設けた第2の回折格子と、第1の物体及び/
又は第2の物体を動かす移動機構と、わずかに異なる2
周波数のコヒーレント光を発生させる光源と、該光源か
ら発生したコヒーレント光を前記第1及び第2の回折格
子の夫々に照射した時にこれらの回折格子から生ずる回
折光のうち±n次回折光の取り出しを行なう回折光取り
出し手段と、前記回折光の取り出し光路途中で2周波成
分を干渉せしめて干渉光とする光干渉手段と、前記回折
光取り出し手段によって取り出され且つ光干渉手段によ
って生成されたビート信号を夫々検出する検出手段と、
これらのビート信号からその位相差を測定してこの位相
差に基づき前記移動機構に制御信号を出力し、第1の物
体及び/又は第2の物体を動かして位置合せする信号処
理制御手段を有する位置合せ装置において、前記回折光
取り出し手段により各回折格子から±n次回折方向で取
り出される回折光につきその回折次数の絶対値nが異な
る複数の回折方向でこれを取り出すと共に、前記検出手
段についてもこれらの回折光取り出し方向に対応させて
各ビート信号の生成ができるようにし、更に前記信号処
理制御手段についても、検出手段により検出された各回
折光のうち次数の絶対値nが等しいものから最終的に生
成されるビート信号同士の位相差を夫々測定し、これら
の各位相差に基づいて前記移動機構に対し制御信号を出
力するようにしたこと特徴とする位置合せ装置。5. A first diffraction grating provided on a first object, a second diffraction grating provided on a second object, a first object and / or
Or slightly different from the moving mechanism that moves the second object 2
A light source for generating coherent light of a frequency and a ± n-order diffracted light out of the diffracted light generated by these diffraction gratings when the coherent light generated by the light source is applied to each of the first and second diffraction gratings. The diffracted light extraction means for performing, the optical interference means for interfering the two frequency components into the interference light in the optical path for extracting the diffracted light, and the beat signal extracted by the diffracted light extraction means and generated by the optical interference means Detection means for detecting each,
It has a signal processing control means for measuring the phase difference from these beat signals, outputting a control signal to the moving mechanism based on the phase difference, and moving and aligning the first object and / or the second object. In the alignment device, the diffracted light extracting means extracts the diffracted light from the respective diffraction gratings in the ± n-th order diffracting directions in a plurality of diffracting directions having different absolute values n of the diffracted orders, and also in the detecting means. The beat signals can be generated in correspondence with the diffracted light extraction directions, and the signal processing control means also determines from the diffracted light detected by the detection means to the final absolute value n of the same order. The phase difference between the beat signals thus generated is measured, and a control signal is output to the moving mechanism based on each phase difference. Alignment and wherein the.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2101571A JPH0635924B2 (en) | 1990-04-19 | 1990-04-19 | Position detecting method, apparatus therefor and position aligning apparatus |
| US07/688,115 US5182610A (en) | 1990-04-19 | 1991-04-19 | Position detecting method and device therefor as well as aligning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2101571A JPH0635924B2 (en) | 1990-04-19 | 1990-04-19 | Position detecting method, apparatus therefor and position aligning apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH042116A JPH042116A (en) | 1992-01-07 |
| JPH0635924B2 true JPH0635924B2 (en) | 1994-05-11 |
Family
ID=14304093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2101571A Expired - Lifetime JPH0635924B2 (en) | 1990-04-19 | 1990-04-19 | Position detecting method, apparatus therefor and position aligning apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0635924B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0981736A (en) * | 1995-09-08 | 1997-03-28 | Fuji Electric Co Ltd | Scratch inspection device |
| CN110716397B (en) | 2019-10-31 | 2020-10-13 | 清华大学 | Exposure beam phase measurement method and lithography system in laser interference lithography |
-
1990
- 1990-04-19 JP JP2101571A patent/JPH0635924B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH042116A (en) | 1992-01-07 |
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