JPH0636437B2 - Infrared light emitting diode - Google Patents
Infrared light emitting diodeInfo
- Publication number
- JPH0636437B2 JPH0636437B2 JP11288986A JP11288986A JPH0636437B2 JP H0636437 B2 JPH0636437 B2 JP H0636437B2 JP 11288986 A JP11288986 A JP 11288986A JP 11288986 A JP11288986 A JP 11288986A JP H0636437 B2 JPH0636437 B2 JP H0636437B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- infrared light
- junction
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 239000002409 silicon-based active material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は新規な構成を有する赤外発光ダイオードに関す
る。The present invention relates to an infrared light emitting diode having a novel structure.
最近、光通信の急激な普及と高性能化にともなって、各
種光デバイスならびに関連電子デバイスの高性能化なら
びに低廉化が重要な課題となっている。現在の低価格の
光通信システムにあっては、ガリウム燐あるいはガリウ
ム・インジウムヒ素燐を素材とした発光ダイオードを発
光素子として使用し、これと合せてシリコンを素材とし
た電子デバイスからなる駆動回路を用いるのが一般的で
あった。この場合は当然モノリシック的な一体化は困難
であり、高々ハイブリッド的な一体化が可能になるに過
ぎなかった。最近にいたり、シリコン単結晶上に直接ガ
リウムヒ素など化合物半導体結晶を成長する試みも行わ
れているが、なお技術的に大きな問題が残されていて、
実際の光通信デバイスに使用されることは当面考えられ
ていない。しかも最近においては、光ファイバの最低損
失波長領域である1.5μｍ付近における発光素子の重要
性がますます増大するに至っている。Recently, with the rapid spread and high performance of optical communication, high performance and low cost of various optical devices and related electronic devices have become important issues. In the current low-priced optical communication system, a light emitting diode made of gallium phosphide or gallium indium arsenide phosphide is used as a light emitting element, and together with this, a drive circuit consisting of an electronic device made of silicon is used. It was common to use. In this case, of course, monolithic integration was difficult, and at most hybrid integration was only possible. Recently, attempts have been made to grow a compound semiconductor crystal such as gallium arsenide directly on a silicon single crystal, but there are still technical problems.
It is not considered to be used for an actual optical communication device for the time being. Moreover, in recent years, the importance of the light emitting element has been increasing more and more in the vicinity of 1.5 μm, which is the minimum loss wavelength region of the optical fiber.
本発明の目的は、かかる状況にかんがみ、モノリシック
の一体化が可能で、したがって低廉なコストで製作がで
き、信頼性が高い1.5μｍ波長領域の発光ダイオードを
提供することにある。In view of such circumstances, an object of the present invention is to provide a highly reliable light emitting diode in the wavelength region of 1.5 μm, which can be monolithically integrated and can be manufactured at low cost.
本発明の赤外発光ダイオードの構成は、シリコンを主要
な活性物質とし、発光に関与する活性領域が逆方向バイ
アス電圧を印加した際高電界を発生し得るＰＩＮ接合，
ＰＮ接合またはショットキー接合からなり、前記活性領
域内には３価のエルビウム原子が含有され、1.5μｍ帯
の発光波長を有することを特徴とする。The structure of the infrared light emitting diode of the present invention is such that the main junction is silicon and the active region involved in light emission can generate a high electric field when a reverse bias voltage is applied.
It is characterized by comprising a PN junction or a Schottky junction, containing trivalent erbium atoms in the active region, and having an emission wavelength of 1.5 μm band.
次に図面により本発明を詳細に説明する。 The present invention will now be described in detail with reference to the drawings.
第１図は本発明の一実施例の部分断面図である。本実施
例は、シリコン結晶からなるＰ層１，Ｉ層２，およびＮ
層３からなるＰＩＮ接合の発光ダイオードであり、ほぼ
１μｍの厚さを有するＩ領域(2)に約１wol％の３価のエ
ルビウム原子を含有する如き構造を有している。このよ
うな組成をもつＰＩＮ接合の形成は、液相エピタキシャ
ル法によっても可能であるが、イオン注入法，あるいは
分子ビーム・エピタキシャル（ＭＢＥ）法によってより
有効に成長を行わしめることが可能である。FIG. 1 is a partial sectional view of an embodiment of the present invention. In this embodiment, a P layer 1, an I layer 2, and an N layer made of silicon crystal are used.
A PIN-junction light-emitting diode consisting of layer 3, having a structure containing approximately 1 wol% of trivalent erbium atoms in the I region (2) having a thickness of approximately 1 μm. The PIN junction having such a composition can be formed by the liquid phase epitaxial method, but it can be grown more effectively by the ion implantation method or the molecular beam epitaxial (MBE) method.
かかるＰＩＮ接合に逆方向のバイアス電圧を印加し、１
０５乃至１０６Ｖ／cmの電界をＩ領域(2)に発生せしめ
ると、このＩ領域において電子なだれが発生し、その一
部のエネルギーが衝突励起によってエルビウム（Er）原
子に伝達され、さらにその一部が第２図の特性図に示す
ような発光スペクトルをもつ1.5μｍ帯の発光を示す。
その発光の効率は励起の条件などに関係するが、５０Ｖ
の電圧を印加し、１ｍＡのアバランシェ電流が流れると
き、最大１％の程度である。Applying a reverse bias voltage to the PIN junction,
When an electric field of 0 5 to 10 6 V / cm is generated in the I region (2), an electron avalanche is generated in the I region, and a part of the energy is transferred to the erbium (Er) atom by collisional excitation. Part of the emission shows emission in the 1.5 μm band having an emission spectrum as shown in the characteristic diagram of FIG.
The luminous efficiency is related to the conditions of excitation, etc.
When a voltage of 1 is applied and an avalanche current of 1 mA flows, the maximum is about 1%.
また、ＰＩＮ接合に代えて、ＰＮ接合あるいはショット
キー接合を利用しても、ほぼ同様な効果を期待し得る
が、しかしＰＩＮ接合が幅の広い均一な電界を実現し得
るため有利である。なお、エルビウムに代えてホルニウ
ム（Ho）あるいはツリウム（Tm）原子を使用しても同様
な赤外発光ダイオードの製作が可能であるが、その発光
波長はいずれの場合も1.8μｍ付近となり、通常の光検
出手段で光電変換を行うことは若干困難となる。Also, if a PN junction or a Schottky junction is used instead of the PIN junction, almost the same effect can be expected, but the PIN junction is advantageous because it can realize a wide and uniform electric field. A similar infrared light emitting diode can be manufactured by using holnium (Ho) or thulium (Tm) atom instead of erbium, but the emission wavelength is about 1.8 μm in all cases, and It becomes a little difficult to perform photoelectric conversion with the light detecting means.
かかる赤外発光ダイオードは、一般に応答速度が遅く、
早いものでも数10μSEC程度であり、しかも応答速度を
向上させると発光効率の低下を伴う不利がある。かかる
理由から光通信機器のモニタリングなどの用途により適
合しているといえる。Such an infrared light emitting diode generally has a slow response speed,
Even the fastest one is about several tens of μSEC, and improving the response speed has the disadvantage of lowering the luminous efficiency. For this reason, it can be said that it is more suitable for applications such as monitoring of optical communication equipment.
かかる赤外発光ダイオードに周知の光学的共振器構造、
たとえばへき開面によるミラー構造をもたらしめること
によってレーザ発振を起させることが可能である。また
かかる赤外発光ダイオードあるいはレーザとしての特性
は全体の温度を冷却、たとえば液体窒素温度にもたらす
ことによって格段に増進される。An optical resonator structure known to such an infrared light emitting diode,
For example, it is possible to cause laser oscillation by providing a mirror structure with a cleavage plane. Further, the characteristics of the infrared light emitting diode or the laser are greatly improved by cooling the entire temperature, for example, by bringing the temperature into liquid nitrogen.
かかる赤外発光ダイオードは周知の方法によりシリコン
電子回路と一体化して、廉価でかつ信頼性の高い光電一
体化回路を形成することができる。Such an infrared light emitting diode can be integrated with a silicon electronic circuit by a well-known method to form an inexpensive and highly reliable photoelectric integrated circuit.
以上説明したように、本発明によれば、かかる赤外発光
ダイオードによって、シリコン集積回路と一体化可能で
製作容易な1.5μｍ光源を得ることができる。As described above, according to the present invention, a 1.5 μm light source that can be integrated with a silicon integrated circuit and is easy to manufacture can be obtained by the infrared light emitting diode.
第１図は本発明の一実施例の赤外発光ダイオードの構造
の模式的断面図、第２図は第１図の赤外発光ダイオード
の発光スペクトルの一例を示すスペクトル図である。 １…Ｐ型層、２…エルビウム原子を含有するＩ型層、３
…Ｎ型層。FIG. 1 is a schematic sectional view of the structure of an infrared light emitting diode according to an embodiment of the present invention, and FIG. 2 is a spectrum diagram showing an example of an emission spectrum of the infrared light emitting diode of FIG. 1 ... P-type layer, 2 ... I-type layer containing erbium atom, 3
... N-type layer.
Claims (1)
与する活性領域が逆方向バイアス電圧を印加した際高電
界を発生し得るＰＩＮ接合，ＰＮ接合またはショットキ
ー接合からなり、前記活性領域内には３価のエルビウム
原子が含有され、1.5μｍ帯の発光波長を有することを
特徴とする赤外発光ダイオード。1. A silicon-based active material, wherein the active region involved in light emission comprises a PIN junction, a PN junction or a Schottky junction capable of generating a high electric field when a reverse bias voltage is applied. An infrared light-emitting diode characterized by containing a trivalent erbium atom in and having an emission wavelength in the 1.5 μm band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11288986A JPH0636437B2 (en) | 1986-05-16 | 1986-05-16 | Infrared light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11288986A JPH0636437B2 (en) | 1986-05-16 | 1986-05-16 | Infrared light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62268169A JPS62268169A (en) | 1987-11-20 |
| JPH0636437B2 true JPH0636437B2 (en) | 1994-05-11 |
Family
ID=14598051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11288986A Expired - Lifetime JPH0636437B2 (en) | 1986-05-16 | 1986-05-16 | Infrared light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0636437B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU5645096A (en) * | 1995-03-29 | 1996-10-16 | Octrooibureau Kisch N.V. | Indirect bandgap semiconductor optoelectronic device |
| KR100377716B1 (en) | 1998-02-25 | 2003-03-26 | 인터내셔널 비지네스 머신즈 코포레이션 | Electric pumping of rare-earth-doped silicon for optical emission |
| JP4922611B2 (en) * | 2005-12-26 | 2012-04-25 | 学校法人東京理科大学 | Zinc oxide optical device, method for manufacturing zinc oxide optical device, and method for using zinc oxide optical device |
| JP5689832B2 (en) * | 2012-02-10 | 2015-03-25 | 日本電信電話株式会社 | Method for manufacturing silicon light emitting device |
-
1986
- 1986-05-16 JP JP11288986A patent/JPH0636437B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62268169A (en) | 1987-11-20 |
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