JPH0639187B2 - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH0639187B2 JPH0639187B2 JP59251839A JP25183984A JPH0639187B2 JP H0639187 B2 JPH0639187 B2 JP H0639187B2 JP 59251839 A JP59251839 A JP 59251839A JP 25183984 A JP25183984 A JP 25183984A JP H0639187 B2 JPH0639187 B2 JP H0639187B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording medium
- reflectance
- information recording
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、光学式のビデオディスクあるいはデジタルオ
ーディオディスク等に適する情報記録媒体に関するもの
である。Description: FIELD OF THE INVENTION The present invention relates to an information recording medium suitable for an optical video disc, a digital audio disc or the like.
従来の情報記録媒体は、特開昭57−186243号に記載のよ
うに、加熱により光学特性が変化する第１の層と書き込
み光に対して光吸収性を有する第２の層より構成されて
いた。A conventional information recording medium, as described in JP-A-57-186243, is composed of a first layer whose optical characteristics change by heating and a second layer having a light absorbing property for writing light. It was
しかし、第１の層にＳb2Ｓe3を用い、第２の層にＢｉを
用いた時の最適な膜厚の点については配慮されていなか
ったので、各膜厚について厳密に検討することにより記
録感度を向上できる可能性があった。However, no consideration was given to the optimum film thickness when Sb 2 Se 3 was used for the first layer and Bi was used for the second layer. There was a possibility that the recording sensitivity could be improved.
本発明の目的は、記録媒体の膜厚を最適にすることによ
り、記録感度を向上させた情報記録媒体を提供すること
にある。An object of the present invention is to provide an information recording medium having an improved recording sensitivity by optimizing the film thickness of the recording medium.
〔発明の概要〕 本発明は、Ｓb2Ｓe3とＢｉの２層構造情報記録媒体にお
いて、その記録前と記録後の反射率の変化と膜厚の関係
を明らかにすることにより、特にＳb2Ｓe3の膜厚を薄く
して、記録感度を向上させたことを特徴としている。SUMMARY OF THE INVENTION The present invention, Sb in 2-layer information recording medium 2 Se 3 and Bi, by clarifying the recording before the relationship between the change and the film thickness of the reflectivity after recording, in particular Sb 2 The feature is that the Se 3 film thickness is reduced to improve the recording sensitivity.
以下、本発明の実施例と比較例について説明する。 Hereinafter, examples and comparative examples of the present invention will be described.
実施例１ 第１図に示すように、アクリル基板３上に、Ｓb2Ｓe3蒸
着膜より成る第１の層１を被着し、これの上に30ｎｍの
厚さのＢｉ蒸着膜より成る第２の層２を被着した媒体を
得た。Example 1 As shown in FIG. 1, a first layer 1 made of a Sb 2 Se 3 vapor-deposited film was deposited on an acrylic substrate 3, and a first layer 1 made of a Bi vapor-deposited film having a thickness of 30 nm was formed thereon. A medium on which layer 2 of 2 was applied was obtained.
ここで、第１の層１は加熱により光学特性が変化する
層、第２の層２は書込み光に対して光吸収性を有する層
である。第１の層１の厚さを変えて８３０ｎｍの波長の
書込み光に対しての書込み前の反射率を測定した。その
結果を第２図中の曲線４に示した。Here, the first layer 1 is a layer whose optical characteristics change by heating, and the second layer 2 is a layer having a light absorbing property for writing light. The thickness of the first layer 1 was changed and the reflectance before writing with respect to writing light having a wavelength of 830 nm was measured. The result is shown by the curve 4 in FIG.
次に、基板３の方向から、８３０ｎｍ波長の半導体レー
ザにより書込み光を照射した後の反射率すなわち記録後
の反射率を測定し、第２図中の曲線５に示した。Next, the reflectance after irradiation of writing light with a semiconductor laser having a wavelength of 830 nm from the direction of the substrate 3, that is, the reflectance after recording was measured, and is shown by a curve 5 in FIG.
このように、本発明者等はＳb2Ｓe3とＢｉの２層構造記
録媒体においては、記録後の反射率はＳb2Ｓe3の膜厚に
よらずほぼ一定の反射率が得られること見い出した。し
たがって、Ｓb2Ｓe3の膜厚を２０〜６５ｎｍの範囲に選
ぶことにより、記録前と記録後の反射率の差を15％以上
大きくとることができる。なお、高い再生感度を得るた
めには反射率の差が15％以上あることが望ましい。As described above, the present inventors have found that in the two-layer structure recording medium of Sb 2 Se 3 and Bi, the reflectance after recording can be almost constant regardless of the film thickness of Sb 2 Se 3. It was Therefore, by selecting the film thickness of Sb 2 Se 3 in the range of 20 to 65 nm, the difference in reflectance between before and after recording can be increased by 15% or more. In order to obtain high reproduction sensitivity, it is desirable that the difference in reflectance is 15% or more.
一方、記録前の反射率はディスクの精密サーボ制御を行
なうために、８％以上必要である。したがって実用上の
Ｓb2Ｓe3膜厚の範囲は、範囲Ａ（２０ｎｍ〜３５ｎｍ）
と範囲Ｂ（４８ｎｍ〜６５ｎｍ）である。On the other hand, the reflectance before recording needs to be 8% or more in order to perform precise servo control of the disc. Therefore, the practical range of the Sb 2 Se 3 film thickness is range A (20 nm to 35 nm).
And the range B (48 nm to 65 nm).
第３図に範囲Ａと範囲ＢのＳb2Ｓe3の膜厚に対して記録
レーザパワーと出力レベルの関係を示した。曲線６は範
囲Ａ内でＳb2Ｓe3の膜厚を３０ｎｍとした場合、曲線７
は範囲Ｂ内でＳb2Ｓe3の膜厚を５５ｎｍとした場合であ
る。このように、記録感度を向上させるためには記録部
の膜厚は少ないことが良く、Ｓb2Ｓe3膜厚を範囲Ａに選
定することにより記録感度を大幅に高めることができ
た。FIG. 3 shows the relationship between the recording laser power and the output level with respect to the film thickness of Sb 2 Se 3 in the ranges A and B. Curve 6 is curve 7 when the film thickness of Sb 2 Se 3 is 30 nm within the range A.
In the range B, the film thickness of Sb 2 Se 3 is 55 nm. As described above, in order to improve the recording sensitivity, it is preferable that the film thickness of the recording portion be small, and by selecting the Sb 2 Se 3 film thickness in the range A, the recording sensitivity could be significantly increased.
比較例１ アクリル基板上に、Ｓb2Ｓe3蒸着膜より成る第１の層を
被着し、これの上に３０ｎｍの厚さのＴｅ蒸着膜より成
る第２の層を被着した媒体を得た。ここでは、実施例１
におけるＢｉ蒸着膜をＴｅ蒸着膜に変えている。第４図
に、実施例１で説明したと同様の半導体レーザ光の照射
前と照射後（記録後）反射率特性を測定した結果を示し
た。Comparative Example 1 A medium was obtained by depositing a first layer of Sb 2 Se 3 vapor deposited film on an acrylic substrate and then depositing a second layer of Te vapor deposited film with a thickness of 30 nm on it. It was Here, the first embodiment
The Bi vapor deposition film in is changed to a Te vapor deposition film. FIG. 4 shows the results of measuring the reflectance characteristics before and after irradiation (after recording) with the same semiconductor laser light as described in Example 1.
第４図において、曲線８は照射前、曲線９は照射後であ
る。このように、第２の層をＴｅ蒸着膜にした場合に
は、照射後の曲線は極小値を持ち、照射前後の反射率変
化を１５％以上大きくとれる範囲は３６ｎｍ〜６０ｎｍ
（範囲Ｃ）と狭くなり、反射率の変化幅も少なくなっ
た。In FIG. 4, curve 8 is before irradiation and curve 9 is after irradiation. Thus, when the second layer is a Te vapor deposition film, the curve after irradiation has a minimum value, and the range in which the reflectance change before and after irradiation can be large by 15% or more is 36 nm to 60 nm.
The range became narrower (range C), and the width of change in reflectance also decreased.
さらに、Ｓb2Ｓe3膜厚が３５ｎｍ以下の範囲では反射率
の変化が少なく、良好な出力が得られない。第３図の曲
線１０に、範囲Ｃ内でＳb2Ｓe3膜厚を５５ｎｍとした場
合の記録レーザパワーと出力レベルの関係を示す。この
ように、Ｓb2Ｓe3とＴｅを用いた２層構造記録媒体で
は、実施例１に比べてＳb2Ｓe3の膜厚が厚いために、記
録感度が低下し、さらに反射率の変化幅が少ないために
出力レベルも低下した。Further, when the Sb 2 Se 3 film thickness is in the range of 35 nm or less, the change in reflectance is small and a good output cannot be obtained. A curve 10 in FIG. 3 shows the relationship between the recording laser power and the output level when the Sb 2 Se 3 film thickness is 55 nm within the range C. As described above, in the two-layer structure recording medium using Sb 2 Se 3 and Te, since the film thickness of Sb 2 Se 3 is thicker than that in Example 1, the recording sensitivity is lowered and the change width of the reflectance is further increased. The output level also decreased due to the small number.
実施例２ アクリル基板３上に、３０ｎｍの厚さのＳb2Ｓe3蒸着膜
より成る第１の層を被着し、これの上にＢｉ蒸着膜より
成る第２の層を被着した。今度は、Ｂｉ蒸着膜の厚さを
変えて、実施例１で説明したと同様の半導体レーザ光の
照射前と照射後の反射率特性を測定した。その結果を第
５図に示す。Example 2 A first layer of a 30 nm thick Sb 2 Se 3 vapor deposited film was deposited on an acrylic substrate 3, and a second layer of a Bi vapor deposited film was deposited thereon. This time, the thickness of the Bi vapor deposition film was changed, and the reflectance characteristics before and after irradiation with the semiconductor laser light similar to that described in Example 1 were measured. The result is shown in FIG.
ここで、曲線１１は照射前、曲線１２は照射後である。
Ｂｉ膜厚を変えた場合も実施例１と同様に、照射後の反
射率はほぼ一定の値となった。Ｂｉの膜厚を厚くすると
照射前の反射率が増加し、照射前後の反射率変化が少な
くなるとともに、膜厚増加に伴ない記録感度が低下する
ため、Ｂｉ膜厚は５０ｎｍ以下が良い。一方、Ｂｉ膜厚
を１５ｎｍ以下にすると信頼性が悪くなる。そこで、Ｂ
ｉの膜厚を範囲Ｄ（１５ｎｍ〜５０ｎｍ）に選定するの
が良い。Here, the curve 11 is before irradiation and the curve 12 is after irradiation.
Even when the Bi film thickness was changed, the reflectance after irradiation had a substantially constant value, as in Example 1. When the thickness of Bi is increased, the reflectance before irradiation is increased, the change in reflectance before and after irradiation is reduced, and the recording sensitivity is reduced as the thickness is increased. Therefore, the Bi thickness is preferably 50 nm or less. On the other hand, if the Bi film thickness is 15 nm or less, the reliability deteriorates. So B
It is preferable to select the film thickness of i in the range D (15 to 50 nm).
なお、上述した本発明による情報記録媒体において、Ｓ
b2Ｓe3は化学量論的組成に限定されず、Ｓｅに対するＳ
ｂの混入量は１０〜８０原子％の範囲であれば、半導体
レーザ光照射により大きな化学特性の変化が得られた。
また、ＢｉはＢｉ単体に限定されず、Ｂｉが７０％以上
含まれる合金あるいは化合物であれば、２層構造記録膜
構造とした時に半導体レーザ光照射により大きな反射率
変化が得られた。In the information recording medium according to the present invention described above, S
b 2 Se 3 is not limited to the stoichiometric composition, and S to Se
When the amount of b mixed is in the range of 10 to 80 atomic%, a large change in the chemical properties was obtained by the irradiation with the semiconductor laser light.
Further, Bi is not limited to Bi alone, and if it is an alloy or compound containing 70% or more of Bi, a large change in reflectance was obtained by irradiation with semiconductor laser light when a two-layer recording film structure was formed.
また、上述した実施例においては、Ｓb2Ｓe3の上にＢｉ
層を形成した場合であるが、反応に、Ｂｉ層の上にＳb2
Ｓe3層を形成し、Ｓb2Ｓe3層側より情報の書込みを行な
うこともできる。Further, in the above-described embodiment, Bi is added on Sb 2 Se 3.
When a layer is formed, Sb 2 is formed on the Bi layer during the reaction.
It is also possible to form an Se 3 layer and write information from the Sb 2 Se 3 layer side.
本発明によれば、Ｓb2Ｓe3層の膜厚を薄くすることがで
きるので、記録感度が向上する効果がある。According to the present invention, the film thickness of the Sb 2 Se 3 layer can be reduced, so that the recording sensitivity is improved.
第１図は本発明による一実施例としての情報記録媒体の
断面図、第２図および第５図は本発明による反射率の測
定結果を示す特性図、第４図は本発明と比較される例の
反射率の測定結果を示す特性図、第３図は、記録レーザ
パワーと出力レベルの関係を示す特性図である。 １……Ｓb2Ｓe3層、 ２……Ｂｉ層、 ３……アクリル基板。FIG. 1 is a sectional view of an information recording medium as one embodiment according to the present invention, FIGS. 2 and 5 are characteristic diagrams showing the results of measurement of reflectance according to the present invention, and FIG. 4 is compared with the present invention. FIG. 3 is a characteristic diagram showing the measurement result of the reflectance of the example, and FIG. 3 is a characteristic diagram showing the relationship between the recording laser power and the output level. 1 ... Sb 2 Se 3 layer, 2 ... Bi layer, 3 ... Acrylic substrate.
Claims (2)
第１の層と書き込み光に対して光吸収性を有する第２の
層とを形成してなる情報記録媒体において、前記第１層
はＳｅとＳｂを主体とする層、第２層はＢｉを主体と
し、Ｂｉ含有量を70原子％以上とする層より成ることを
特徴とする情報記録媒体。1. An information recording medium comprising a substrate, on which a first layer whose optical characteristics change by heating and a second layer having a light absorbing property for writing light are formed. Is a layer mainly composed of Se and Sb, and the second layer is mainly composed of Bi and is composed of a layer having a Bi content of 70 atomic% or more.
において、前記第１層の膜厚が20nm〜35nmの範囲にあ
り、第２層の膜厚が15nm〜50nmの範囲にあることを特徴
とする情報記録媒体。2. The information recording medium according to claim 1, wherein the thickness of the first layer is in the range of 20 nm to 35 nm and the thickness of the second layer is in the range of 15 nm to 50 nm. An information recording medium characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251839A JPH0639187B2 (en) | 1984-11-30 | 1984-11-30 | Information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59251839A JPH0639187B2 (en) | 1984-11-30 | 1984-11-30 | Information recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61130093A JPS61130093A (en) | 1986-06-17 |
| JPH0639187B2 true JPH0639187B2 (en) | 1994-05-25 |
Family
ID=17228689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59251839A Expired - Lifetime JPH0639187B2 (en) | 1984-11-30 | 1984-11-30 | Information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0639187B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5268254A (en) * | 1989-02-28 | 1993-12-07 | Fuji Xerox Co., Ltd. | Optical recording medium |
| JP3400832B2 (en) * | 1992-12-03 | 2003-04-28 | 株式会社日立製作所 | Information recording medium and information recording / reproducing system using the same |
-
1984
- 1984-11-30 JP JP59251839A patent/JPH0639187B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61130093A (en) | 1986-06-17 |
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