JPH0640163B2 - Optical switch - Google Patents
Optical switchInfo
- Publication number
- JPH0640163B2 JPH0640163B2 JP60083643A JP8364385A JPH0640163B2 JP H0640163 B2 JPH0640163 B2 JP H0640163B2 JP 60083643 A JP60083643 A JP 60083643A JP 8364385 A JP8364385 A JP 8364385A JP H0640163 B2 JPH0640163 B2 JP H0640163B2
- Authority
- JP
- Japan
- Prior art keywords
- optical switch
- optical
- present
- comb
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 90
- 238000010438 heat treatment Methods 0.000 claims description 19
- 229910001120 nichrome Inorganic materials 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000010365 information processing Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Optical Filters (AREA)
Description
【発明の詳細な説明】 〔発明の概要〕 本発明は誘電体多層膜光学フイルターの温度制御を行な
うことにより該誘電体多層膜光学フイルターの光学特性
を制御して光学的スイツチング動作をする光スイツチを
提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is an optical switch for performing an optical switching operation by controlling the temperature of a dielectric multilayer optical filter to control the optical characteristics of the dielectric multilayer optical filter. Is provided.
本発明は光通信や光情報処理に用いられる光スイツチに
おいて誘電体多層膜光学フイルターの光学特性を熱的に
制御することにより構造と制御の簡単な光スイツチを提
供することを目的としたものである。The present invention aims to provide an optical switch having a simple structure and control by thermally controlling the optical characteristics of a dielectric multilayer optical filter in an optical switch used for optical communication or optical information processing. is there.
本発明による光スイツチは光通信分野における光分波，
光シヤツターや光情報処理分野における光変調など多く
の応用が考えられる。The optical switch according to the present invention is an optical demultiplexer in the optical communication field.
Many applications are conceivable such as optical shutter and optical modulation in the field of optical information processing.
従来より光スイツチはミラーを電気機械的に駆動させて
光路を変える方法やLiNbO3などの電気光学結晶の光電気
効果を用いてLiNbO3基板上に形成された光導波器内での
光スイツチを行なう方法やＹＩＧなどの磁気光学結晶の
磁気光学効果を用いて光スイツチを構成する方法やＢＳ
Ｏなどの圧電結晶を振動させるときに生ずるラマンニナ
ス散乱を用いて光スイツチを構成する方法が用いられて
きた。The light switch in conventionally optical switch is electrically mechanically driven mirror optical path changing method and LiNbO 3 in electro-optical light waveguide by using the photoelectric effect formed LiNbO 3 substrate of a crystal, such as BS method for constructing optical switch using magneto-optical effect of magneto-optical crystal such as YIG and BS
A method of constructing an optical switch by using Ramanninus scattering generated when a piezoelectric crystal such as O is vibrated has been used.
しかしながら上述した従来の光スイツチはLiNbO3導波路
を用いた光スイツチ以外はすべて寸法が大きく光通信部
品，光情報処理部品の小型軽量化への要求を満足するも
のではない。またLiNbO3導波路を用いた光スイツチは小
型軽量であるが光の入出力方法が容易でなくまたその製
法上の技術も確立されていない。本発明者は、誘電体多
層膜光学フィルターが、熱的に敏感であるとの知見に基
づき本発明に至ったものであり、これにより上記問題点
を解決し小型軽量で光の入出力が容易な光スイツチを提
供するものである。However, all of the above-mentioned conventional optical switches have a large size except for the optical switch using the LiNbO 3 waveguide, and do not satisfy the demand for downsizing and weight saving of optical communication parts and optical information processing parts. Moreover, the optical switch using the LiNbO 3 waveguide is small and lightweight, but the input / output method of light is not easy and the manufacturing technology has not been established. The inventor of the present invention has arrived at the present invention based on the finding that the dielectric multilayer optical filter is thermally sensitive, which solves the above problems and makes it easy to input and output light with a small size and light weight. It provides a light switch.
本発明は、狭帯域型である誘電体多層光学フィルターに
加熱手段を設けることに特徴があり、さらに、具体的構
成を記載すれば下記のとおりである。The present invention is characterized in that a heating means is provided in the narrow-band dielectric multilayer optical filter, and the specific configuration is described below.
本発明はガラス基板の上に誘電体多層膜光学フイルター
を形成しその上にニクロムなどの金属ヒーターを形成し
て該誘電体多層膜光学フイルターを上記金属ヒーターで
加熱し上記誘電体多層膜光学フイルターの光学特性を変
化させることにより光スイツチを作製し上記問題点を解
決した。In the present invention, a dielectric multilayer optical filter is formed on a glass substrate, a metal heater such as nichrome is formed on the dielectric multilayer optical filter, and the dielectric multilayer optical filter is heated by the metal heater to obtain the dielectric multilayer optical filter. An optical switch was produced by changing the optical characteristics of the above to solve the above problems.
以下本発明による光スイツチを図面を参照しながら実施
例に沿つて説明する。第１図は本発明による光スイツチ
の構成と基本回路を示した模式図である。第１図におい
てガラス基板１は寸法が１０mm×１０mm×１mmであり両
面を光学研磨したＢＫ−７ガラスである。また本実施例
では誘電体多層膜光学フイルター２として〔HL〕5H(LL)
H〔LH〕5なる膜構造の狭帯域光学フイルターを用いた
（上記の記号でＨは膜厚６７３ÅのＺｎＳ膜，Ｌは膜厚
９９６ÅのMgF2膜を意味し、〔HL〕5はＨＬなる膜構成
を５回くり返し形成することを意味する）。すなわち本
実施例で用いた狭帯域光学フイルターの膜層数は２３層
である。第１図においてくし形電極３としては線幅１０
０μｍ，ピツチ５００μｍ，膜厚５μｍのニクロム電極
を用いた。ただし、くし形電極の線幅としては第１図中
Ｗでピツチとしては第１図中Ｐで示した長さを意味する
ものとする。膜の形成は真空蒸着法で行ない狭帯域光学
フイルターはHeNeレーザー光でガラス基板の透過率を測
定しながら作製した。また本発明による光スイツチの基
本回路は電流計４，電圧計５，定電圧電源６からなりく
し形電極３に流す電流は定電圧電源６の出力を調節する
ことによつて行なつた。Hereinafter, an optical switch according to the present invention will be described along with embodiments with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration and basic circuit of an optical switch according to the present invention. In FIG. 1, the glass substrate 1 is BK-7 glass having dimensions of 10 mm × 10 mm × 1 mm and both sides optically polished. In this embodiment, the dielectric multilayer optical filter 2 is [HL] 5 H (LL).
A narrow band optical filter having a film structure of H [LH] 5 was used (in the above symbol, H means a ZnS film having a film thickness of 673Å, L means a MgF 2 film having a film thickness of 996Å, and [HL] 5 becomes HL. It means that the film structure is repeatedly formed 5 times). That is, the number of film layers of the narrow band optical filter used in this example is 23 layers. In FIG. 1, the comb electrode 3 has a line width of 10
A nichrome electrode having a thickness of 0 μm, a pitch of 500 μm and a film thickness of 5 μm was used. However, the line width of the comb-shaped electrode means W in FIG. 1, and the pitch means the length shown by P in FIG. The film was formed by the vacuum deposition method, and the narrow band optical filter was prepared by measuring the transmittance of the glass substrate with HeNe laser light. The basic circuit of the optical switch according to the present invention is composed of the ammeter 4, the voltmeter 5, and the constant voltage power source 6 and the current flowing through the comb-shaped electrode 3 is adjusted by adjusting the output of the constant voltage power source 6.
次に本発明による光スイツチの動作を説明する。第２図
は本発明による光スイツチの動作測定法を示した図であ
る。第２図においてHeNeレーザー９から出た光は第１図
で説明した本発明の光スイツチ７の電極面に垂直に入射
した後透過して光検出器１０に入る。検出器１０からの
出力はレコーダー１１により記録される。なお、HeNeレ
ーザー９，本発明の光スイツチ７，光検出器１０は暗箱
内に設置され外光による雑音が除去されるようになつて
いる。第３図に第１図の実施例で示した本発明の光スイ
ツチのニクロムくし形電極の加熱電力と光検出出力の関
係を示す。なお第３図における光検出出力はニクロムく
し形電極に電流を流さないときの出力を１としたときの
相対値を示した。第３図からニクロムくし形電極加熱電
力が4.4Ｗを越えると本発明の光スイツチは完全なオン
オフ動作をすることがわかる。ニクロムくし形電極加熱
電力が４Ｗのとき焦電形温度計で膜温度を測定したとこ
ろ約２６０℃であつた。Next, the operation of the optical switch according to the present invention will be described. FIG. 2 is a diagram showing a method for measuring the operation of the optical switch according to the present invention. In FIG. 2, the light emitted from the HeNe laser 9 is perpendicularly incident on the electrode surface of the optical switch 7 of the present invention described in FIG. The output from the detector 10 is recorded by the recorder 11. The HeNe laser 9, the optical switch 7 of the present invention, and the photodetector 10 are installed in a dark box so that noise due to external light is removed. FIG. 3 shows the relationship between the heating power of the nichrome comb electrode of the optical switch of the present invention shown in the embodiment of FIG. 1 and the light detection output. The photodetection output in FIG. 3 shows a relative value when the output when current is not applied to the nichrome comb electrode is 1. It can be seen from FIG. 3 that when the nichrome comb electrode heating power exceeds 4.4 W, the optical switch of the present invention performs complete on / off operation. When the heating power of the nichrome comb electrode was 4 W, the film temperature was measured by a pyroelectric thermometer and found to be about 260 ° C.
次にオン時にくし形電極加熱電力が４Ｗとなるような周
期Ｔの矩形電圧を本発明の光スイツチのくし形電極に印
加しＴを変化させたときの動作特性を第４図に示す。第
４図における光検出出力は第３図で用いたのと同じ相対
値を用いた。第４図から光検出出力の立上り時間は約１
００msec，緩和時間は約１秒であることがわかり、本発
明による光スイツチはＴ＝１sec以上の周期信号によつ
て駆動することが好ましいことがわかる。Next, FIG. 4 shows operating characteristics when T is varied by applying a rectangular voltage having a period T so that the comb-shaped electrode heating power is 4 W when turned on, to the comb-shaped electrode of the optical switch of the present invention. As the light detection output in FIG. 4, the same relative value as that used in FIG. 3 was used. From Fig. 4, the rise time of the photodetection output is about 1
It can be seen that the relaxation time is 00 msec and the relaxation time is about 1 second, and it is preferable that the optical switch according to the present invention is driven by a periodic signal of T = 1 sec or more.
次に第１図で説明した本発明の光スイツチのくし形電極
の材質としてニクロム，クロム，ニツケル，窒化タンタ
ル，コバルト，タングステン，タンタルを用い、該くし
形電極に電力４Ｗとなる電圧を連続的に印加したときの
光検出器の出力を調べ第５図に示した。第５図から明ら
かなようにくし形電極用材質としてニクロムおよび窒化
タンタルが極めて良い経時特性を持つていることがわか
る。Next, nichrome, chromium, nickel, nickel, tantalum nitride, cobalt, tungsten, and tantalum are used as the material of the comb electrode of the optical switch of the present invention described in FIG. 1, and a voltage of 4 W is continuously applied to the comb electrode. The output of the photodetector when it was applied to was investigated and shown in FIG. As is clear from FIG. 5, nichrome and tantalum nitride have very good aging characteristics as the material for the comb-shaped electrode.
また第１図で示した構成の本発明の光スイツチにおいて
ニクロムくし形電極の線幅が１０μｍ以下となると光の
回折角が大きくなると同時に連続使用時の経時劣化が急
に大きくなる。しかも電極形成をフオトレジストで行な
うことを考慮すればくし形電極幅は２０μｍ以上が良
い。またくし形電極のピツチは電極幅に比べ大きくなけ
ればならなく透過光効率が５０％以上とするためには４
０μｍ以上が必要である。そしてくし形電極形成精度を
考慮すればくし形電極のピツチは５０μｍ以上が良い。Further, in the optical switch of the present invention having the structure shown in FIG. 1, when the line width of the nichrome comb-shaped electrode is 10 μm or less, the diffraction angle of light becomes large, and at the same time, the deterioration over time during continuous use rapidly increases. Moreover, considering that the electrodes are formed using photoresist, the width of the comb-shaped electrodes is preferably 20 μm or more. Also, the pitch of the comb-shaped electrode must be larger than the electrode width, and it is 4
0 μm or more is required. Considering the accuracy of forming the comb-shaped electrode, the pitch of the comb-shaped electrode is preferably 50 μm or more.
次に本発明の光スイツチの連続使用時の経時劣化を小さ
くするために第１図の実施例で示した本発明の光スイツ
チのくし形電極上にSiO2保護膜を形成しその連続使用時
の経時劣化を調べた。第６図はくし形電極材質としてニ
クロムを用い種々の膜厚のSiO2保護膜を形成した本発明
の光スイツチの連続使用時の経時特性である。第６図中
の曲線に付与された数値はSiO2保護膜の膜厚を示す。第
６図より本発明による光スイツチのSiO2保護膜の膜厚は
５μｍ以上であるのが良いことがわかる。また膜厚５μ
ｍのSiO2保護膜を形成した本発明の光スイツチにオン時
にニクロムくし形電極加熱電力が４Ｗとなるような周期
Ｔの矩形電圧を印加しＴを変化させたときの動作特性を
第７図に示す。第７図より膜厚５μｍのSiO2保護膜を形
成した本発明の光スイツチは立上り時間約２５ｍsec，
緩和時間５０ｍsecとなりSiO2保護膜を形成しない本発
明の光スイツチに比べ応答速度が４倍以上速くなつてい
ることがわかる。また第７図においてＴ＝２secの場合
の緩和時間が第４図の緩和時間と差が認められないのは
本発明の光スイツチに対する蓄熱量がＴ＝２secでは大
きすぎるからであると考えられる。保護膜材質としては
SiO2以外にもZnS,AlN,TiO2,ZrO2などの誘電体であれば
上記と同じ効果が得られることがわかつている。Next, in order to reduce deterioration with time of continuous use of the optical switch of the present invention, a SiO 2 protective film is formed on the comb-shaped electrode of the optical switch of the present invention shown in the embodiment of FIG. The deterioration with time was examined. FIG. 6 shows the characteristics over time of the continuous use of the optical switch of the present invention in which nichrome is used as the material of the comb-shaped electrode and SiO 2 protective films of various thicknesses are formed. The numerical value given to the curve in FIG. 6 shows the film thickness of the SiO 2 protective film. It can be seen from FIG. 6 that the thickness of the SiO 2 protective film of the optical switch according to the present invention is preferably 5 μm or more. Also the film thickness 5μ
FIG. 7 shows the operation characteristics when a rectangular voltage having a period T such that the nichrome comb electrode heating power is 4 W is applied and T is changed when the optical switch of the present invention having a SiO 2 protective film of m is formed. Shown in. As shown in FIG. 7, the optical switch of the present invention having a SiO 2 protective film with a thickness of 5 μm has a rise time of about 25 msec.
It can be seen that the relaxation time is 50 msec, and the response speed is four times faster than that of the optical switch of the present invention in which the SiO 2 protective film is not formed. In FIG. 7, the relaxation time when T = 2 sec does not differ from the relaxation time in FIG. 4 because the amount of heat stored in the optical switch of the present invention is too large at T = 2 sec. As the material of the protective film
ZnS Besides SiO 2, AlN, that if the dielectric such as TiO 2, ZrO 2 the same effect as above is obtained and divide.
また第１図における誘電体多層膜光学フイルターとして
〔ＨＬ〕ｎＨ（ＬＬ）Ｈ〔ＬＨ〕ｎなる膜構成の狭帯域
フイルターを用い、ｎを３，４，５，６と変化させたと
きのSiO2保護膜を形成しない本発明の光スイツチのニク
ロムくし形電極加熱電力と光検出器出力の関係を示した
のが第８図である（上記の記号でＨは膜厚６７３ÅのＺ
ｎＳ膜、Ｌは膜厚９９６ÅのMgF2膜を意味し、 〔ＨＬ〕ｎはＨＬなる膜構成をｎ回くり返し形成するこ
とを意味する）。第８図よりｎ＝３の場合はニクロムく
し形電極加熱電力を５Ｗ以上としても光検出器出力は相
対値で0.3以下にならないことがわかる。またｎ＝４の
場合光検出器出力がほぼゼロとなるニクロムくし形電極
加熱電力５Ｗとなる電圧を本発明の光スイツチに印加し
たときの膜温度を焦電形温度計で測定したところ約３４
０℃であり、連続使用時の経時劣化はニクロムくし形電
極加熱電力が４Ｗのときに比べて約３倍悪くなつた。以
上のことから本発明の実施例における光スイッチ〔Ｈ
Ｌ〕ｎＨ（ＬＬ）Ｈ〔ＬＨ〕ｎなる狭帯域光学フイルタ
ーを用いる場合はｎ＝５以上であることが良いことがわ
かる。これは膜層数では23層以上に当たるが、狭帯域光
学フィルターには種々の膜構成があり、本発明による光
スイッチによる狭帯域光学フィルターの膜層数は、一般
的には21層以上で有効である。Further, when a narrow band filter having a film constitution of [HL] n H (LL) H [LH] n is used as the dielectric multilayer optical filter in FIG. 1 and n is changed to 3, 4, 5, 6 FIG. 8 shows the relationship between the nichrome comb electrode heating power of the optical switch of the present invention in which the SiO 2 protective film is not formed and the output of the photodetector (in the above symbols, H is Z of 673Å film thickness).
nS film, L means a MgF 2 film having a film thickness of 996Å, and [HL] n means that a film structure of HL is repeatedly formed n times. From FIG. 8, it can be seen that in the case of n = 3, the relative output of the photodetector does not become 0.3 or less even if the nichrome comb electrode heating power is 5 W or more. Further, when n = 4, the film temperature when a voltage which gives a nichrome comb electrode heating power of 5 W at which the photodetector output becomes almost zero is applied to the optical switch of the present invention is about 34 when measured by a pyroelectric thermometer.
The temperature was 0 ° C., and deterioration with time during continuous use was about 3 times worse than when the nichrome comb electrode heating power was 4 W. From the above, the optical switch [H
It is understood that when using a narrow band optical filter of L] n H (LL) H [LH] n, it is preferable that n = 5 or more. Although this corresponds to 23 or more film layers, the narrow band optical filter has various film configurations, and the number of film layers of the narrow band optical filter by the optical switch according to the present invention is generally 21 or more. Is.
以上述べたように本発明による光スイツチは誘電体多層
膜光学フイルターに加熱手段を付与することによつて小
型軽量で光の入出力が容易な光スイツチを構成すること
ができ光通信や光情報処理分野における光スイツチの小
型軽量化に対する効果は大きい。また本発明による光ス
イツチは高価な電気光学結晶や磁気光学結晶を用いない
ため光スイツチの低価格化に対する効果も大きい。As described above, the optical switch according to the present invention can form an optical switch that is small and lightweight and is easy to input and output light by providing heating means to the dielectric multilayer optical filter, and thus optical communication and optical information can be configured. The effect of reducing the size and weight of the optical switch in the processing field is great. Further, the optical switch according to the present invention does not use an expensive electro-optic crystal or magneto-optic crystal, so that it has a great effect on the cost reduction of the optical switch.
第１図は本発明による光スイツチの構成と基本回路を示
した模式図であり、第２図は本発明による光スイツチの
動作測定法を示したブロツク図であり、第３図は本発明
による光スイツチのニクロムくし形電極加熱電力と光検
出器出力の関係を示した特性図であり、第４図はオン時
にくし形電極加熱電力が４Ｗになるような周期Ｔの矩形
電圧を本発明のくし形電極に印加しＴを変化させたとき
の動作特性を示した図であり、第５図は種々の電極材質
を本発明の光スイツチのくし形電極に用いた場合の該く
し形電極の加熱電力を４Ｗとなる電圧を印加して連続使
用したときの経時特性を示した図であり、第６図は種々
の膜厚のSiO2保護膜を形成した本発明の光スイツチのニ
クロムくし形電極に加熱電力４Ｗとなる電圧を印加して
連続使用したときの経時特性を示した図であり、第７図
はSiO2保護膜を膜厚５μｍだけ形成した本発明の光スイ
ツチにオン時にくし形電極加熱電力が４Ｗになるような
周期Ｔの矩形電圧を印加しＴを変化させたときの動作特
性を示した図であり、第８図は〔ＨＬ〕ｎＨ（ＬＬ）Ｈ
〔ＬＨ〕ｎ形の狭帯域光学フイルターを用いｎを変化さ
せたときの本発明の光スイツチのニクロムくし形電極加
熱電力と光検出器出力の関係を示した図である。 １…ガラス基板 ２…誘電体多層膜光学フイルター ３…くし形電極 ４…電流計 ５…電圧計 ６…定電圧電源 ７…本発明の光スイツチ ８…レーザー電源 ９…HeNeレーザー １０…光検出器 １１……レコーダーFIG. 1 is a schematic diagram showing a configuration and a basic circuit of an optical switch according to the present invention, FIG. 2 is a block diagram showing an operation measuring method of the optical switch according to the present invention, and FIG. 3 is according to the present invention. FIG. 4 is a characteristic diagram showing the relationship between the nichrome comb electrode heating power of the optical switch and the photodetector output. FIG. 4 shows the rectangular voltage of the period T such that the comb electrode heating power is 4 W when the switch is on. FIG. 5 is a diagram showing operating characteristics when T is applied to a comb-shaped electrode and FIG. 5 shows various comb-shaped electrodes when various electrode materials are used for the comb-shaped electrode of the optical switch of the present invention. FIG. 6 is a diagram showing the characteristics over time when the heating power is applied continuously with a voltage of 4 W applied, and FIG. 6 is a nichrome comb shape of the optical switch of the present invention having SiO 2 protective films of various thicknesses formed thereon. When the electrode is continuously used by applying a voltage of 4 W of heating power Is a diagram that shows the time characteristic, FIG. 7 is applied a rectangular voltage of period T, such as comb electrode heating power when on the optical switch of the present invention the formation of the SiO 2 protective film only thickness 5μm is 4W FIG. 8 is a diagram showing operating characteristics when T is changed, and FIG. 8 shows [HL] n H (LL) H.
Is a diagram showing the relationship of nichrome comb electrode heating power and the photodetector output light switch of the present invention when changing the n using narrow-band optical filter of [LH] n type. DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Dielectric multilayer optical filter 3 ... Comb type electrode 4 ... Ammeter 5 ... Voltmeter 6 ... Constant voltage power supply 7 ... Optical switch 8 of the present invention 8 ... Laser power supply 9 ... HeNe laser 10 ... Photodetector 11 ... Recorder
Claims (4)
帯域光学フィルターに加熱手段を設けてなる光スイッ
チ。1. An optical switch comprising a narrow band optical filter made of a dielectric multilayer film having 23 or more film layers and provided with heating means.
ターである特許請求の範囲第１項記載の光スイッチ。2. The optical switch according to claim 1, wherein the heating means is a comb-shaped metal thin film heater.
たは窒化タンタルであり、くし形の線幅が20μｍ以上、
ピッチが50μｍ以上である特許請求の範囲第２項記載の
光スイッチ。3. The metal thin film heater is made of nichrome or tantalum nitride and has a comb-shaped line width of 20 μm or more,
The optical switch according to claim 2, wherein the pitch is 50 μm or more.
形成した特許請求の範囲第２項記載の光スイッチ。4. The optical switch according to claim 2, wherein a dielectric protective film is formed on the metal thin film heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60083643A JPH0640163B2 (en) | 1985-04-19 | 1985-04-19 | Optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60083643A JPH0640163B2 (en) | 1985-04-19 | 1985-04-19 | Optical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61241735A JPS61241735A (en) | 1986-10-28 |
| JPH0640163B2 true JPH0640163B2 (en) | 1994-05-25 |
Family
ID=13808129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60083643A Expired - Lifetime JPH0640163B2 (en) | 1985-04-19 | 1985-04-19 | Optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0640163B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0634925A (en) * | 1992-07-20 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | Optical waveguide circuit device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3834793A (en) | 1973-06-21 | 1974-09-10 | Advance Technology Center Inc | Dichromic mirror having multilayer thin films including vanadium dioxide |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4957850A (en) * | 1972-09-30 | 1974-06-05 |
-
1985
- 1985-04-19 JP JP60083643A patent/JPH0640163B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3834793A (en) | 1973-06-21 | 1974-09-10 | Advance Technology Center Inc | Dichromic mirror having multilayer thin films including vanadium dioxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61241735A (en) | 1986-10-28 |
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