JPH0641369B2 - Polycrystalline silicon manufacturing equipment - Google Patents
Polycrystalline silicon manufacturing equipmentInfo
- Publication number
- JPH0641369B2 JPH0641369B2 JP60120504A JP12050485A JPH0641369B2 JP H0641369 B2 JPH0641369 B2 JP H0641369B2 JP 60120504 A JP60120504 A JP 60120504A JP 12050485 A JP12050485 A JP 12050485A JP H0641369 B2 JPH0641369 B2 JP H0641369B2
- Authority
- JP
- Japan
- Prior art keywords
- bell jar
- furnace
- coating layer
- polycrystalline silicon
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は耐久性がよく、かつ加熱効率のよい多結晶シリ
コンの製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Field of Industrial Application> The present invention relates to an apparatus for producing polycrystalline silicon which has high durability and high heating efficiency.
〈従来の技術〉 半導体の原料となる高純度の多結晶シリコンは一般にベ
ースと該ベースの上面に被せられたベルジャとからなる
炉を有する装置によって製造されている。該装置のベー
スには電極が設けられており、該電極には固定孔が設け
られている。多結晶シリコンを製造する場合には電極に
固定孔に多結晶シリコンの種棒を取り付けて炉の内部に
複数本の該種棒を立設し、該種棒を１０５０℃程度に通
電加熱する一方、炉内部にクロルシランと水素との混合
ガスを導入して多結晶シリコンを種棒表面に検出、成長
させる。従って、上記製造装置の炉は出来るだけ加熱効
果の良いことが求められるが、実際には装置構成上、放
熱、伝熱による熱損失を避けることが出来ない。更に、
反応炉を形成するベルジャの材料としては石英が用いら
れて来たが、近年生産性を高めるために炉の大型化が求
められ、金属製のベルジャが用いられるようになって来
た。この場合過熱による炉の損傷を防ぐ必要から通常、
炉の外側を冷却している。このため熱損失は約５０〜９
０％にも及ぶ。一方、高品質の多結晶シリコンを製造す
るには炉内の温度分布を均壱にし、種棒の表面に多結晶
シリコンを均一に成長させる必要がある。<Prior Art> High-purity polycrystalline silicon, which is a raw material for semiconductors, is generally manufactured by an apparatus having a furnace having a base and a bell jar covering the upper surface of the base. The base of the device is provided with an electrode, and the electrode is provided with a fixing hole. When manufacturing polycrystalline silicon, a seed rod of polycrystalline silicon is attached to the fixing hole in the electrode, a plurality of seed rods are erected inside the furnace, and the seed rod is heated by heating to about 1050 ° C. A mixed gas of chlorosilane and hydrogen is introduced into the furnace to detect and grow polycrystalline silicon on the surface of the seed rod. Therefore, the furnace of the above manufacturing apparatus is required to have as good a heating effect as possible, but in reality, heat loss due to heat radiation and heat transfer cannot be avoided due to the apparatus configuration. Furthermore,
Quartz has been used as a material for a bell jar forming a reaction furnace, but in recent years, a bell jar made of metal has come to be used because of the demand for a larger furnace in order to improve productivity. In this case, because it is necessary to prevent damage to the furnace due to overheating,
Cooling the outside of the furnace. Therefore, the heat loss is about 50-9.
It reaches 0%. On the other hand, in order to manufacture high quality polycrystalline silicon, it is necessary to make the temperature distribution in the furnace uniform and to grow the polycrystalline silicon uniformly on the surface of the seed rod.
このため、従来、ベルジャの内面を鏡面にし、種棒から
の幅射熱を反射させることにより加熱効果と温度分布の
均一化を図っている。Therefore, conventionally, the inner surface of the bell jar is made to be a mirror surface, and the radiant heat from the seed rod is reflected to make the heating effect and the temperature distribution uniform.
〈発明が解決しようとする問題点〉 従来、ベルジャ内面を鏡面状態とするには、基材である
ステンレス鋼の表面にニッケル、銀、クロム等を溶射
し、又は鍍金し、或いはベルジャ内面自体を電解研摩、
バフ研摩して鏡面状態としている。ところがこのような
鏡面では耐久性に劣る欠点があり、さらにベルジャ内面
を単に研摩するものはその反射率が銀を鍍金したもの等
に比べ小さい欠点もある。<Problems to be Solved by the Invention> Conventionally, in order to make the inner surface of the bell jar a mirror surface, nickel, silver, chromium, etc. are sprayed or plated on the surface of the stainless steel which is the base material, or the inner surface of the bell jar itself is Electrolytic polishing,
Buffed to a mirror finish. However, such a mirror surface has a drawback that it is inferior in durability, and that the one in which the inner surface of the bell jar is simply polished has a smaller reflectance than the one plated with silver.
炉内で多結晶シリコンを製造する場合、種棒の表面にシ
リコンが析出するだけでなくベルジャ内面にもシリコン
化合物が付着する。種棒に通電中は炉内部に原料ガスま
たはアルゴン等の不活性ガスが供給され、炉内の酸化を
防止しているが、製造後、成長した多結晶シリコンを炉
外に取り出すためベルジャを開けると外部の空気が流入
し、上記ベルジャ内面に付着したシリコン化合物を酸化
分解する。或いは残留するクロルシランが酸化し、これ
らに起因する塩酸を生じ、これがベルジャ内面を侵す。
このため、ベルジャ内面を研摩して鏡面としたものは直
接その研摩面が腐食され、或いは銀等を鍍金したものは
その鍍金面が侵れて剥離し、鏡面が損なわれる問題があ
る。When manufacturing polycrystalline silicon in a furnace, not only silicon is deposited on the surface of the seed rod, but also silicon compound is deposited on the inner surface of the bell jar. While the seed rod is energized, a raw material gas or an inert gas such as argon is supplied to the inside of the furnace to prevent oxidation in the furnace, but after manufacturing, the bell jar is opened to take out the grown polycrystalline silicon to the outside of the furnace. External air flows in and oxidatively decomposes the silicon compound attached to the inner surface of the bell jar. Alternatively, the residual chlorosilane is oxidized to generate hydrochloric acid due to these, which attacks the inner surface of the bell jar.
For this reason, there is a problem in that the inner surface of the bell jar is polished to a mirror surface, the polished surface is directly corroded, or the plated surface of silver or the like is corroded and peeled off to damage the mirror surface.
〈問題点を解決するための手段〉 本発明はベルジャ内面を化学的に極めて安定な金の被覆
層を設けて鏡面とすることにより、従来の問題を解決し
たものである。<Means for Solving the Problems> The present invention solves the conventional problems by providing the inner surface of the bell jar with a chemically very stable gold coating layer to form a mirror surface.
〈発明の構成〉 本発明によれば、ベースとベルジャからなる炉の内部に
多結晶シリコンの種棒を配設して該種棒の多結晶シリコ
ンを成長させる製造装置において、上記ベルジャ内面に
金被覆層を設けて鏡面にしたことを特徴とする多結晶シ
リコンの製造装置が提供される。<Structure of the Invention> According to the present invention, in a manufacturing apparatus for arranging a seed rod of polycrystalline silicon inside a furnace composed of a base and a bell jar and growing the polycrystalline silicon of the seed rod, gold is formed on the inner surface of the bell jar. Provided is an apparatus for producing polycrystalline silicon, which is characterized in that a coating layer is provided to make it a mirror surface.
又、好ましくは、上記金被覆層がベルジャ内面に金を溶
射、蒸着、あるいは鍍金して形成されることを特徴とす
る製造装置、あるいは、上記金被覆層がベルジャ内面に
金被覆板を張設して形成されることを特徴とする製造装
置が提供される。Preferably, the gold coating layer is formed by spraying, vapor depositing, or plating gold on the inner surface of the bell jar, or the gold coating layer is formed by stretching a gold coating plate on the inner surface of the bell jar. A manufacturing apparatus is provided which is characterized by being formed as follows.
本発明はベルジャ内面に金の被覆層を形成し、該内面を
鏡面化する。金被覆層の形成方法は、直接ベルジャ内面
に被覆層を形成しても良く、又、金めっき板を該内面に
張設して形成してもよい。ベルジャ内面に直接、金被覆
層を形成するには、金を該内面に溶射し、蒸着し、或い
は鍍金などの手段によって形成する。尚、大型の装置に
は上記被覆層の形成手段としては溶射、蒸着あるいは筆
めっきによる方法が好適に実施される。勿論これらの手
段に限らない。In the present invention, a gold coating layer is formed on the inner surface of the bell jar, and the inner surface is mirror-finished. As a method of forming the gold coating layer, the coating layer may be directly formed on the inner surface of the bell jar, or a gold plated plate may be stretched on the inner surface. To form the gold coating layer directly on the inner surface of the bell jar, gold is sprayed on the inner surface, vapor-deposited, or formed by a method such as plating. Incidentally, in a large-sized apparatus, a method such as thermal spraying, vapor deposition or brush plating is preferably carried out as a means for forming the coating layer. Of course, it is not limited to these means.
次に、金被覆を有する板（金被覆板）を上記ベルジャ内
面に張り付けて鏡面化してもよい。該金被覆板を用いる
場合には、電気めっき等により下地の板に金被覆を施し
易いので上記被覆層の形成が容易になる利点がある。勿
論下地の板に金被覆を施すには上記電気めっきに限らず
他の適宜な方法のよってもなされる。尚、下地の板は炉
内が約１０００℃前後に加熱されるので耐熱性の大きい
鋼板などが用いられる。因に上記金被覆層の厚さは格別
制限されない。Next, a plate having a gold coating (gold-coated plate) may be attached to the inner surface of the bell jar to make it a mirror surface. When the gold-coated plate is used, it is easy to form a gold coating on the underlying plate by electroplating or the like, which has the advantage of facilitating the formation of the coating layer. Of course, the gold coating on the base plate is not limited to the electroplating described above, and may be performed by any other suitable method. Since the inside of the furnace is heated to about 1000 ° C., a steel plate having high heat resistance is used as the base plate. Incidentally, the thickness of the gold coating layer is not particularly limited.
上記金被覆層をベルジャ内面に張設するには、ベルジャ
内面を覆うように相隣接する該金被覆板を隙間なく張合
わせ、該金被覆板の両端をビス止め等により固定すれば
よい。尚、ベルジャ内面が湾曲しているのに対し、真直
な金被覆板を張合わせると、この金被覆板裏側に僅かな
隙間を生ずるが、炉内の副射熱は金被覆面で反射され、
また熱伝導性のよい固定ビスを用いれば該固定ビスを介
しての放熱及び外部からの冷却も効果的になされるので
格別支障無い。In order to stretch the gold coating layer on the inner surface of the bell jar, the gold coating plates adjacent to each other may be tightly attached so as to cover the inner surface of the bell jar, and both ends of the gold coating plate may be fixed with screws or the like. While the inner surface of the bell jar is curved, when a straight gold-coated plate is attached, a slight gap is created on the back side of this gold-coated plate, but the secondary heat in the furnace is reflected by the gold-coated surface,
Further, if a fixing screw having good thermal conductivity is used, heat dissipation through the fixing screw and cooling from the outside can be effectively performed, so that there is no particular problem.
次に、ベルジャ内面に直接、金被覆層を形成する場合お
よび金被覆板を用いる場合、いずれにおいても、ベルジ
ャ内面の天井面を除く内側面のみに上記金被覆層を形成
してもよい。一般に発熱体である種棒は細長い棒状部材
であり、炉内に立設されるので、側面への幅射熱が大き
く、天井面への幅射は側面ほど大きくはない。従ってベ
ルジャの内側面に金被覆層を設ければ天井面を除いても
加熱効果を高め、炉内温度の均一化を充分に達成でき
る。Next, in both cases of directly forming the gold coating layer on the inner surface of the bell jar and using the gold coating plate, the gold coating layer may be formed only on the inner surface of the bell jar inner surface excluding the ceiling surface. In general, the seed rod, which is a heating element, is an elongated rod-shaped member and is erected in the furnace. Therefore, the side surface has a large radiant heat and the ceiling surface does not have a large radiant heat. Therefore, if the gold coating layer is provided on the inner side surface of the bell jar, the heating effect can be enhanced even if the ceiling surface is removed, and the temperature inside the furnace can be made sufficiently uniform.
第１図に本発明に係る炉の一例を示す。図示するように
炉１０はベース１１と該ベース１１の上面を覆うベルジ
ャ１２から形成され、該ベース１１には種棒１３を保持
する電極１４が適数設けられている。更にベース１１に
は原料ガスであるクロルシランと水素との混合ガスを炉
内に供給するための導入口１５と反応後のガスを排出す
る排気口１６とが設けられている。尚、図にはこれら電
極等の一部が示され他は省略されている。FIG. 1 shows an example of the furnace according to the present invention. As shown, the furnace 10 is composed of a base 11 and a bell jar 12 covering the upper surface of the base 11, and the base 11 is provided with an appropriate number of electrodes 14 for holding a seed rod 13. Further, the base 11 is provided with an inlet 15 for supplying a mixed gas of chlorosilane, which is a raw material gas, and hydrogen into the furnace, and an exhaust port 16 for discharging the gas after the reaction. Incidentally, some of these electrodes and the like are shown in the drawing, and others are omitted.
上記ベルジャ１２の内面に金被覆層１７が形成されてい
る。該金被覆層１７は多数の金めっき板１７ａをベルジ
ャ内面にビス止めして形成される。A gold coating layer 17 is formed on the inner surface of the bell jar 12. The gold coating layer 17 is formed by screwing a large number of gold-plated plates 17a on the inner surface of the bell jar.
多結晶シリコンを製造する場合、上記電極１４に種棒１
３を保持させて炉内に適数本の種棒を立設し、該種棒に
通電して約１０５０℃〜１１５０℃に加熱する。一方、
導入口１５を通じて炉内にクロルシランと水素との混合
ガスを供給する。該クロルシランは水素によって還元、
分解しシリコン単体となって種棒の表面に析出し、堆積
する。一方、反応後の気体は排気口１６から外部に排出
される。When manufacturing polycrystalline silicon, a seed rod 1 is attached to the electrode 14.
While holding No. 3, an appropriate number of seed rods are erected in the furnace, and the seed rods are energized and heated to about 1050 ° C to 1150 ° C. on the other hand,
A mixed gas of chlorosilane and hydrogen is supplied into the furnace through the inlet 15. The chlorosilane is reduced by hydrogen,
It decomposes and becomes a simple substance of silicon, which is deposited and deposited on the surface of the seed rod. On the other hand, the gas after the reaction is discharged to the outside through the exhaust port 16.
〈発明の効果〉 本発明においては、炉内面が金被覆層によって鏡面化さ
れているのでベルジャを通じての放熱が抑制される。そ
の結果、炉内での温度勾配が小さくなり、多結晶シリコ
ンが太く成長しても外縁部と中心部との温度差が許容範
囲にとどまり、クラックなどの破損が起こらないだけで
なく、従来約５０〜９０％にも及ぶ放射伝熱による熱損
失が軽減され著しい省エネルギー効果がもたらされる。
因に放熱の際における金属の係数は、バフ研摩のＳＵＳ
は約０．２前後であり、一方金（Au）は0.018〜0.035で
ある。従って熱損失の大幅な改善を図ることができる。<Effects of the Invention> In the present invention, since the inner surface of the furnace is mirror-finished by the gold coating layer, heat dissipation through the bell jar is suppressed. As a result, the temperature gradient in the furnace is reduced, and even if the polycrystalline silicon grows thick, the temperature difference between the outer edge and the center remains within the allowable range, and not only damage such as cracks does not occur, but the conventional Heat loss due to radiative heat transfer of 50 to 90% is reduced, and a remarkable energy saving effect is brought about.
Because of this, the coefficient of metal during heat dissipation is SUS for buffing.
Is about 0.2, while gold (Au) is 0.018 to 0.035. Therefore, the heat loss can be significantly improved.
更に、ベルジャ内面が金被覆層によって鏡面化されてい
るので化学的に極めて安定であり、開炉後、外部の空気
が炉内に流入しても、残留ガスや付着するシリコン化合
物に起因する塩酸などによっても該鏡面が侵されず、長
期間、良好な鏡面状態を維持することが出来る。Furthermore, since the inner surface of the bell jar is mirror-finished by the gold coating layer, it is chemically extremely stable, and even if external air flows into the furnace after the furnace is opened, hydrochloric acid caused by residual gas or attached silicon compounds is generated. The mirror surface is not attacked by the above, and a good mirror surface state can be maintained for a long time.
〈実施例および比較例〉 直径200mmφ高さ300mmφかつ、内壁を５μの厚みにＡｕ
メッキした反応炉内に長さ200mmのシリコン棒２本を逆
Ｕ字型に連結して設置し、Ｈ２100／min、SiHCl360cc
/minの流量の混合ガスを供給し、反応表面温度1100℃で
反応させ、シリコン棒の直径を28mmφとした。この場
合、シリコン１Kg当りの電力使用量は161KWHであった。<Examples and Comparative Examples> Diameter 200 mm φ Height 300 mm φ and inner wall 5 μm thick Au
Two silicon rods with a length of 200 mm are installed in an inverted U shape in a plated reaction furnace, and H 2 100 / min, SiHCl 3 60cc
The mixed gas was supplied at a flow rate of / min and the reaction was performed at a reaction surface temperature of 1100 ° C., and the diameter of the silicon rod was 28 mmφ. In this case, the amount of electric power used per 1 kg of silicon was 161 KWH.
実施例２ 実施例１と同様の条件で反応後、反応炉内壁に付着した
クロルシラン重合物及び、その加水分解生成物を純水で
洗い流し、再度同条件で反応しシリコン棒の直径を28mm
φとした。この場合、シリコン１Kg当りの電力使用量は
159KWHであった。Example 2 After the reaction under the same conditions as in Example 1, the chlorosilane polymer adhering to the inner wall of the reaction furnace and its hydrolysis product were washed away with pure water, and reacted again under the same conditions to give a silicon rod having a diameter of 28 mm.
It was φ. In this case, the power consumption per 1 kg of silicon is
It was 159 KWH.
比較例 １ 直径200mmφ高さ300mmφかつ内壁がSUS 304でバフ研摩
施工した反応炉内に長さ200mmのシリコン棒２本を逆Ｕ
字型に連結して設置し、Ｈ２100／min、SiHCl3 60cc/
minの流量で混合ガスを供給し、反応表面温度1100℃で
反応させ、シリコン棒の直径を28mmφとした。この場
合、シリコン１Kg当りの電力使用量は210KWHであった。Comparative Example 1 Two 200 mm long silicon rods were inverted U inside a reactor with a diameter of 200 mm φ, a height of 300 mm φ and an inner wall buffed with SUS 304.
Installed by connecting in a letter shape, H 2 100 / min, SiHCl 3 60cc /
The mixed gas was supplied at a flow rate of min and the reaction was performed at a reaction surface temperature of 1100 ° C., and the diameter of the silicon rod was set to 28 mmφ. In this case, the amount of electric power used per 1 kg of silicon was 210 KWH.
比較例 ２ 直径200mmφ高さ300mmφかつ内壁をＡｇでメッキしたし
た反応炉内に長さ200mmのシリコン棒２本を逆Ｕ字型に
連結して設置し、Ｈ２100／min、SiHCl3 60cc/minの
流量で混合ガスを供給し、反応表面温度1100℃で反応さ
せ、シリコン棒の直径を28mmφとした。この場合、シリ
コン１Kg当りの電力使用量は160KWHであった。Comparative Example 2 Two 200 mm long silicon rods were connected in an inverted U shape in a reaction furnace having a diameter of 200 mmφ, a height of 300 mmφ and an inner wall plated with Ag. H 2 100 / min, SiHCl 3 60cc / The mixed gas was supplied at a flow rate of min and the reaction was performed at a reaction surface temperature of 1100 ° C., and the diameter of the silicon rod was set to 28 mmφ. In this case, the amount of electric power used per 1 kg of silicon was 160 KWH.
比較例 ３ 比較例２の反応後、反応炉内壁に付着したクロルシラン
重合物及びその加水分解生成物を純水で洗い流し再度同
条件で反応させ、シリコン棒の直径を28mmφとした。こ
の場合、シリコン１Kg当りの電力使用量は168KWHであっ
た。Comparative Example 3 After the reaction in Comparative Example 2, the chlorosilane polymer adhering to the inner wall of the reaction furnace and its hydrolysis product were washed away with pure water and reacted again under the same conditions, and the diameter of the silicon rod was 28 mmφ. In this case, the amount of electric power used per 1 kg of silicon was 168 KWH.
第１図は本発明に係る炉の概略を示す部分切欠斜視図で
ある。図面中、 １０……炉、１１−ベース １２……ベルジャ、１３−種棒 １４……電極、１５−導入口 １６……排気口、１７−金被覆層 である。FIG. 1 is a partially cutaway perspective view showing the outline of a furnace according to the present invention. In the drawing, 10 ... Furnace, 11-base 12 ... Belger, 13-seed rod 14 ... Electrode, 15-inlet port 16 ... Exhaust port, 17-Gold coating layer.
Claims (3)
晶シリコンの種棒を配設して該種棒の多結晶シリコンを
成長させる製造装置において、上記ベルジャ内面に金被
覆層を設けて鏡面にしたことを特徴とする多結晶シリコ
ンの製造装置。1. A manufacturing apparatus for arranging a polycrystalline silicon seed rod inside a furnace comprising a base and a bell jar to grow the polycrystalline silicon of the seed rod, wherein a gold coating layer is provided on the inner surface of the bell jar to provide a mirror surface. An apparatus for producing polycrystalline silicon, characterized in that
蒸着あるいは鍍金して形成されることを特徴とする特許
請求の範囲第１項の製造装置。2. The gold coating layer sprays gold onto the inner surface of the bell jar,
The manufacturing apparatus according to claim 1, wherein the manufacturing apparatus is formed by vapor deposition or plating.
張設して形成されることを特徴とする特許請求の範囲第
１項の製造装置。3. The manufacturing apparatus according to claim 1, wherein the gold coating layer is formed by stretching the gold coating layer on the inner surface of the bell jar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60120504A JPH0641369B2 (en) | 1985-06-05 | 1985-06-05 | Polycrystalline silicon manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60120504A JPH0641369B2 (en) | 1985-06-05 | 1985-06-05 | Polycrystalline silicon manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61281009A JPS61281009A (en) | 1986-12-11 |
| JPH0641369B2 true JPH0641369B2 (en) | 1994-06-01 |
Family
ID=14787830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60120504A Expired - Lifetime JPH0641369B2 (en) | 1985-06-05 | 1985-06-05 | Polycrystalline silicon manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0641369B2 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001294416A (en) * | 2000-04-07 | 2001-10-23 | Mitsubishi Materials Polycrystalline Silicon Corp | Polycrystalline silicon manufacturing equipment |
| EP1772429A4 (en) | 2004-06-22 | 2010-01-06 | Shin Etsu Film Co Ltd | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR A SOLAR CELL PRODUCED BY THE METHOD |
| JP4941631B2 (en) * | 2005-11-21 | 2012-05-30 | 三菱マテリアル株式会社 | Silicon seed and manufacturing method thereof |
| JP5509578B2 (en) * | 2007-11-28 | 2014-06-04 | 三菱マテリアル株式会社 | Polycrystalline silicon manufacturing apparatus and manufacturing method |
| JP5428303B2 (en) * | 2007-11-28 | 2014-02-26 | 三菱マテリアル株式会社 | Polycrystalline silicon manufacturing method |
| RU2010143546A (en) | 2008-03-26 | 2012-05-10 | ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) | GOLD-COATED REACTOR SYSTEM FOR DEPOSIT OF POLYCRYSTAL SILICON AND METHOD |
| JP5444860B2 (en) | 2008-06-24 | 2014-03-19 | 三菱マテリアル株式会社 | Polycrystalline silicon production equipment |
| KR101620635B1 (en) * | 2008-06-24 | 2016-05-12 | 미쓰비시 마테리알 가부시키가이샤 | Apparatus for producing polycrystalline silicon |
| US20110318909A1 (en) * | 2010-06-29 | 2011-12-29 | Gt Solar Incorporated | System and method of semiconductor manufacturing with energy recovery |
| DE102011115782B4 (en) * | 2011-10-12 | 2013-04-25 | Centrotherm Sitec Gmbh | Reactor with coated reactor vessel and coating process |
| JP2012056841A (en) * | 2011-10-18 | 2012-03-22 | Mitsubishi Materials Corp | Silicon seed, and processing method and processing apparatus of the same |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| US10450649B2 (en) | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
| CN112938985B (en) * | 2021-03-01 | 2024-12-31 | 江苏鑫华半导体科技股份有限公司 | Polycrystalline silicon reduction furnace and polycrystalline silicon chemical vapor deposition method |
| CN116102018B (en) * | 2022-11-11 | 2024-06-04 | 石河子大学 | Method for separating hexachlorodisilane from polysilicon byproduct oligomeric chlorosilane |
| JP7843825B1 (en) * | 2024-12-12 | 2026-04-10 | 株式会社トクヤマ | Polycrystalline silicon manufacturing equipment |
-
1985
- 1985-06-05 JP JP60120504A patent/JPH0641369B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61281009A (en) | 1986-12-11 |
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