JPH0641399B2 - Vapor phase epitaxial growth method - Google Patents
Vapor phase epitaxial growth methodInfo
- Publication number
- JPH0641399B2 JPH0641399B2 JP24969189A JP24969189A JPH0641399B2 JP H0641399 B2 JPH0641399 B2 JP H0641399B2 JP 24969189 A JP24969189 A JP 24969189A JP 24969189 A JP24969189 A JP 24969189A JP H0641399 B2 JPH0641399 B2 JP H0641399B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- single crystal
- vapor phase
- growth method
- disilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 235000012771 pancakes Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 イ）発明の目的 〔産業上の利用分野〕 本発明は、Ｓｉ単結晶基板上に、Ｓｉ単結晶膜を成長す
る気相エピタキシャル成長法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Object of the invention [Industrial application] The present invention relates to a vapor phase epitaxial growth method for growing a Si single crystal film on a Si single crystal substrate.
半導体集積回路（ＩＣ）の製造において、Ｓｉ気相エピ
タキシャル成長法は重要なプロセスの１つである。この
方法は、通常１０００℃以上の高温で行われるため、Ｓ
ｉ単結晶基板中の不純物（ドーパント）が、オートドー
ピング、固相拡散により、エピタキシャル成長した単結
晶膜中に入り込む等の問題点があった。この問題を解決
するために、種々の低温化方法が開発されている。The Si vapor phase epitaxial growth method is one of important processes in the manufacture of semiconductor integrated circuits (ICs). Since this method is usually performed at a high temperature of 1000 ° C. or higher, S
There is a problem that impurities (dopants) in the i single crystal substrate enter the epitaxially grown single crystal film by autodoping or solid phase diffusion. In order to solve this problem, various methods for reducing the temperature have been developed.
代表的なものの１つが、分解し易いガスを原料として、
用いるというもので、ジシラン（Si2H6）を原料とした
場合、常圧では７００℃までエピタキシャル成長するこ
とが明らかになっている。One of the typical ones is gas that decomposes easily,
Since it is used, it has been clarified that when disilane (Si 2 H 6 ) is used as a raw material, it grows epitaxially up to 700 ° C. under normal pressure.
従来の方法では、低温下例えば７００℃で得られた膜
は、単結晶ではあっても、欠陥が１０４ケ／cm2以上あ
り、工業的に使用できる膜ではなかつた。又、膜の堆積
速度（成長速度）も0.01μｍ／minと遅かった。According to the conventional method, the film obtained at a low temperature, for example, 700 ° C., has a defect of 10 4 / cm 2 or more even though it is a single crystal, and it is not a film that can be industrially used. Further, the deposition rate (growth rate) of the film was as low as 0.01 μm / min.
一方、エピタキシャル成長温度を高くすれば、欠陥が減
少することが判っているが、９００℃以上では低温化の
効果が薄くなり、９００℃における堆積速度は0.8μｍ
／min位であり、十分とは言えない。On the other hand, it is known that the defects are reduced by increasing the epitaxial growth temperature, but the effect of lowering the temperature becomes low at 900 ° C or higher, and the deposition rate at 900 ° C is 0.8 μm.
/ Min, which is not enough.
ロ）発明の構成 〔問題点を解決する手段〕 本発明は、希釈したジシランを用いてＳｉ単結晶基板上
に、Ｓｉ単結晶膜をエピタキシャル成長させる際に、基
板温度を５００℃〜１，２００℃とし、かつジシラン濃
度が０．００１〜１ｖｏｌ％である希釈ガス（以下、原
料ガスともいう）を用い、その線速を５〜１００cm/min
とすることを特徴とする気相エピタキシャル成長方法で
ある。(B) Configuration of the Invention [Means for Solving the Problems] The present invention employs diluted disilane to epitaxially grow a Si single crystal film on a Si single crystal substrate, and the substrate temperature is 500 ° C. to 1,200 ° C. And a disilane concentration of 0.001 to 1 vol% (hereinafter, also referred to as raw material gas) is used, and the linear velocity is 5 to 100 cm / min.
The vapor phase epitaxial growth method is characterized in that
本発明においてジシランは高純度のものが好ましい。原
料ガスにおけるジシランの濃度は、０．００１〜１ｖｏ
ｌ％である。該ジシランの濃度は上記範囲内で必要とす
る堆積速度に応じて適宜変えることが出来るが、０．０
０２〜０．５ｖｏｌ％が好ましい。In the present invention, disilane is preferably highly pure. The concentration of disilane in the raw material gas is 0.001 to 1 vo.
1%. The concentration of the disilane can be appropriately changed within the above range depending on the required deposition rate.
02-0.5 vol% is preferable.
原料ガスにおける希釈ガスとしては、Ｈ２およびＨｅ、
Ａｒ等の不活性ガスを用いることが出来るが、安価なＨ
２が好ましい。The dilution gas in the feed gas, H 2 and H e,
It can be used an inert gas such as A r, but inexpensive H
2 is preferred.
原料ガスの線速は、５〜１００cm／min、好ましくは１
０〜５０cm／minである。５cm／min未満では結晶成長に
充分な量を供給する事が出来ず、１００cm／minを超え
ると得られる結晶膜に堆積欠陥が生じる。The linear velocity of the raw material gas is 5 to 100 cm / min, preferably 1
It is 0 to 50 cm / min. If it is less than 5 cm / min, a sufficient amount for crystal growth cannot be supplied, and if it exceeds 100 cm / min, a deposition defect occurs in the obtained crystal film.
エピタキシャル成長させる際の基板温度は、５００℃か
ら１２００℃、好ましくは６００℃から１０００℃であ
る。The substrate temperature during the epitaxial growth is 500 ° C to 1200 ° C, preferably 600 ° C to 1000 ° C.
反応器の形状は、本発明の線速を実現できるものであれ
ばよいが、通常、横型、縦型、バレル型、パンケーキ型
（竪型）を用いることが出来る。The reactor may have any shape as long as it can realize the linear velocity of the present invention, but generally, a horizontal type, a vertical type, a barrel type, and a pancake type (vertical type) can be used.
好ましくは、パンケーキ型である。The pancake type is preferred.
Ｓｉ単結晶基板は、ガス流に対して、平行、垂直あるい
はその中間（傾斜）等、種々の置き方、並べ方をとるこ
とが可能である。平行以外の置き方が好ましい。The Si single crystal substrate can be placed in various ways such as parallel, perpendicular or in the middle (tilt) with respect to the gas flow, and can be arranged in various ways. A placement other than parallel is preferred.
実施例１ ２″両方位（１００）、Ｎ型（Ｓｂドープ）のＳｉ単結
晶基板を、ＳｉＣコートしたカーボン製サセプター（支
持台）上に載せ、竪型円筒状石英製反応管中に設置し
た。常圧下で、Ｈ２を１５００cc/minで流し、高周波加
熱によりＳｉ基板を１０５０℃まで昇温し、この状態で
１０分間加熱を続けた。Example 1 A 2 ″ biaxial (100), N-type (Sb-doped) Si single crystal substrate was placed on a SiC-coated carbon susceptor (supporting base) and placed in a vertical cylindrical quartz reaction tube. Under normal pressure, H 2 was flowed at 1500 cc / min, the Si substrate was heated to 1050 ° C. by high frequency heating, and heating was continued for 10 minutes in this state.
この後、基板温度を７００℃まで下げた後、Ｈ２1,500c
c/minとジシラン２cc/minの原料ガスを６０分間流し
た。この時の原料ガスの線速は３０cm／minであった。After that, the substrate temperature is lowered to 700 ° C. and then H 2 1,500c
A source gas of c / min and disilane of 2 cc / min was flowed for 60 minutes. The linear velocity of the raw material gas at this time was 30 cm / min.
得られた膜は、完全な鏡面であり、反射電子線回折の結
果、菊地線が見られ、完全な単結晶であることが判っ
た。Seccoエッチしたところ、積層欠陥等の欠陥は見ら
れなかった。堆積速度は０．０４μｍ／minと十分大き
な値であった。なお、この膜の光学顕微鏡写真及び反射
電子回折は第１図及び第２図の通りであった。The obtained film had a perfect mirror surface, and as a result of backscattered electron diffraction, Kikuchi rays were observed, and it was found that the film was a perfect single crystal. When Secco was etched, no defects such as stacking faults were found. The deposition rate was 0.04 μm / min, which was a sufficiently large value. Optical micrographs and backscattered electron diffraction of this film were as shown in FIGS. 1 and 2.
実施例２ エピタキシャル成長させる際の基板温度を９００℃、ジ
シランの流量を６cc/min（原料ガス線速３０cm／min）
とした以外は、実施例１と同様の実験を行った。Example 2 The substrate temperature at the time of epitaxial growth was 900 ° C., and the flow rate of disilane was 6 cc / min (raw material gas linear velocity 30 cm / min).
The same experiment as in Example 1 was carried out except that
得られた膜は、欠陥のない完全な単結晶であった。堆積
速度は、1.3μｍ／minと非常に大きな値となった。The obtained film was a perfect single crystal without defects. The deposition rate was 1.3 μm / min, which was a very large value.
比較例１〜６ エピタキシャル成長させる際の基板温度、原料ガスのジ
シラン濃度および原料ガスの線速を表１の通りとした以
外は、実施例１と同様の実験を行った。Comparative Examples 1 to 6 The same experiment as in Example 1 was performed except that the substrate temperature, the disilane concentration of the source gas, and the linear velocity of the source gas during epitaxial growth were as shown in Table 1.
その結果は表１に示す通り、いずれも満足の出来ないも
のであった。As shown in Table 1, the results were all unsatisfactory.
ハ）発明の効果 本発明は、基板温度を５００℃〜１，２００℃とし、か
つジシランの濃度が０．００１〜１ｖｏｌ％である希釈
ガスの線速を５〜１００cm／minとすることにより、欠
陥のない完全性の高いＳｉ単結晶膜をＳｉ単結晶基板上
に低温下かつ大きな堆積速度で堆積させることが出来、
工業的に非常に有用なエピタキシャル成長方法である。 C) Effect of the Invention In the present invention, the substrate temperature is set to 500 ° C. to 1,200 ° C., and the linear velocity of the diluting gas having a disilane concentration of 0.001 to 1 vol% is set to 5 to 100 cm / min. It is possible to deposit a defect-free and highly complete Si single crystal film on a Si single crystal substrate at low temperature and at a high deposition rate.
It is an industrially very useful epitaxial growth method.
第１図は実施例１で得られたＳｉ単結晶膜の光学顕微鏡
写真であり、第２図は同結晶膜の反射電子線回折であ
る。FIG. 1 is an optical microscope photograph of the Si single crystal film obtained in Example 1, and FIG. 2 is a backscattered electron diffraction pattern of the same crystal film.
Claims (1)
上に、Ｓｉ単結晶膜をエピタキシャル成長させる際に、
基板温度を５００℃〜１，２００℃とし、かつジシラン
の濃度が０．００１〜１ｖｏｌ％である希釈ガスを用
い、その線速を５〜１００cm/minとすることを特徴とす
る気相エピタキシャル成長方法。1. When epitaxially growing a Si single crystal film on a Si single crystal substrate using diluted disilane,
A vapor phase epitaxial growth method characterized in that a substrate temperature is set to 500 ° C. to 1,200 ° C., a disilane concentration is 0.001 to 1 vol%, and a linear velocity is set to 5 to 100 cm / min. .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24969189A JPH0641399B2 (en) | 1989-09-26 | 1989-09-26 | Vapor phase epitaxial growth method |
| US07/588,220 US5221412A (en) | 1989-09-26 | 1990-09-26 | Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24969189A JPH0641399B2 (en) | 1989-09-26 | 1989-09-26 | Vapor phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03112890A JPH03112890A (en) | 1991-05-14 |
| JPH0641399B2 true JPH0641399B2 (en) | 1994-06-01 |
Family
ID=17196770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24969189A Expired - Fee Related JPH0641399B2 (en) | 1989-09-26 | 1989-09-26 | Vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0641399B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975074A (en) * | 2021-02-19 | 2022-08-30 | 中国科学院微电子研究所 | Method for manufacturing polysilicon film and method for manufacturing semiconductor device |
-
1989
- 1989-09-26 JP JP24969189A patent/JPH0641399B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03112890A (en) | 1991-05-14 |
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