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JPH0641970B2 - Method for measuring ferromagnetic resonance absorption - Google Patents
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JPH0641970B2 - Method for measuring ferromagnetic resonance absorption - Google Patents

Method for measuring ferromagnetic resonance absorption

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Publication number
JPH0641970B2
JPH0641970B2 JP61157275A JP15727586A JPH0641970B2 JP H0641970 B2 JPH0641970 B2 JP H0641970B2 JP 61157275 A JP61157275 A JP 61157275A JP 15727586 A JP15727586 A JP 15727586A JP H0641970 B2 JPH0641970 B2 JP H0641970B2
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JP
Japan
Prior art keywords
microwave
wave
sample
ferromagnetic resonance
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP61157275A
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Japanese (ja)
Other versions
JPS6312982A (en
Inventor
茂 武田
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Proterial Ltd
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Hitachi Metals Ltd
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Priority to JP61157275A priority Critical patent/JPH0641970B2/en
Publication of JPS6312982A publication Critical patent/JPS6312982A/en
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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マイクロ波における損失の小さい強磁性体の
強磁性共鳴吸収の測定方法に関するものである。
TECHNICAL FIELD The present invention relates to a method for measuring ferromagnetic resonance absorption of a ferromagnetic material having a small loss in microwaves.

〔従来の技術〕[Conventional technology]

マイクロ波における損失の小さい強磁性体の強磁性共鳴
吸収を測定する場合には、大きく分けて、(1)共振法と
(2)非共振法がある。前者の共振法は、試料を装荷する
部品がマイクロ波共振器である場合をいう。これは、強
磁性共鳴半値幅△Hが比較的大きい場合や試料寸法が小
さい場合、即ち全体としての共鳴信号が小さい場合に用
いられる。測定装置としては、第14図に示すように空
胴共振器3からの反射波を測定する装置が用いられる。
When measuring the ferromagnetic resonance absorption of a ferromagnetic material with a small loss in the microwave, it is roughly divided into (1) the resonance method and
(2) There is a non-resonant method. The former resonance method refers to the case where the component loaded with the sample is a microwave resonator. This is used when the ferromagnetic resonance half-value width ΔH is relatively large or when the sample size is small, that is, when the resonance signal as a whole is small. As the measuring device, a device for measuring the reflected wave from the cavity resonator 3 as shown in FIG. 14 is used.

マイクロ波電力はマイクロ波発振器1より導波管8aを
介してサーキュレータ7で方向を変え空胴共振器3に入
力電力Piとして入る。試料4が空胴共振器3の内部に配
される。別の方法としては共振器の側壁に設けられた結
合孔の近傍に、外部から試料4が配される。強磁性共鳴
が生じない場合は、空胴共振器3と測定系はほぼ臨界結
合の状態にあり、反射電力Prは非常に小さく、Pr≪Piが
成立する。このときマイクロ波検出器2の出力はほぼ零
となる。電磁石のポールピース5a,5bにより空胴共振器
が配された空間に必要な静磁界を発生させ、強磁性共鳴
を生じさせると、空胴共振器3からの反射電力Prが僅か
に増加する。これを信号としてマイクロ波検出器2が検
出する。実際には磁界変調コイル6により、静電界を僅
かに高周波で変動させて、その変化分として微分波形を
観測するようになっている。この構成の前提条件は、摂
動論が成立する範囲、即ち強磁性共鳴状態でPr≪Piが成
立することである。従って、この方法はPr〜Piとなる強
磁性共鳴の信号が大きい場合には適していない。
The microwave power changes its direction from the microwave oscillator 1 via the waveguide 8a by the circulator 7 and enters the cavity resonator 3 as the input power Pi. A sample 4 is placed inside the cavity resonator 3. As another method, the sample 4 is disposed from the outside in the vicinity of the coupling hole provided on the side wall of the resonator. When the ferromagnetic resonance does not occur, the cavity resonator 3 and the measurement system are in a state of substantially critical coupling, the reflected power Pr is very small, and Pr << Pi holds. At this time, the output of the microwave detector 2 becomes almost zero. When the static magnetic field necessary for the space where the cavity resonator is arranged is generated by the pole pieces 5a and 5b of the electromagnet to cause the ferromagnetic resonance, the reflected power Pr from the cavity resonator 3 slightly increases. The microwave detector 2 detects this as a signal. In practice, the magnetic field modulation coil 6 causes the electrostatic field to fluctuate slightly at high frequencies, and the differential waveform is observed as the change. The precondition for this configuration is that Pr << Pi holds in the range where the perturbation theory holds, that is, in the ferromagnetic resonance state. Therefore, this method is not suitable when the ferromagnetic resonance signals of Pr to Pi are large.

これに対して、非共振法は、第15図に示すように試料
を装荷するマイクロ波部品が通常の短絡線路9の短絡端
である。これは、強磁性共鳴半値幅△Hが比較的小さい
場合や試料寸法が大きい場合、即ち全体としての共鳴信
号が大きい場合に用いられる。但し、強磁性共鳴が生じ
ない状態での反射電力Prは入射電力Piとほぼ等しい。測
定装置としては、第15図のような構成のものを用いれ
ばよい。しかし、通常のESR(Electron Spin Resona
nce)の装置では大きな反射波を測定する構成になって
いないため、この方法をそのまま用いることは無理があ
る。又、試料とマイクロ波の結合が共振法に比較すると
かなり小さいが、短絡線路9の場合、定在波が生ずるた
め損失の小さい試料ではまだ結合が大きすぎる。
On the other hand, in the non-resonant method, the microwave component loaded with the sample is the short-circuit end of the normal short-circuit line 9 as shown in FIG. This is used when the ferromagnetic resonance half-value width ΔH is relatively small or when the sample size is large, that is, when the resonance signal as a whole is large. However, the reflected power Pr in the state where the ferromagnetic resonance does not occur is almost equal to the incident power Pi. As the measuring device, the one having the structure shown in FIG. 15 may be used. However, normal ESR (Electron Spin Resona
nce) is not configured to measure large reflected waves, it is impossible to use this method as it is. Further, the coupling between the sample and the microwave is considerably smaller than that of the resonance method, but in the case of the short-circuit line 9, the coupling is still too large in the sample with a small loss because a standing wave is generated.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

強磁性共鳴半値幅△Hが比較的小さい場合や試料寸法が
大きい場合、即ち全体としての共鳴信号が大きい場合、
上述したように短絡線路を用いた非共振法は通常のES
Rの装置に回路的に適合しないという問題点があった。
When the ferromagnetic resonance half-value width ΔH is relatively small or when the sample size is large, that is, when the overall resonance signal is large,
As mentioned above, the non-resonant method using the short-circuit line is a normal ES.
There was a problem that it was not circuit-compatible with the R device.

本発明者はこの問題を解決する方法として既に特願昭6
0−175067号で整合負荷付直導波管の方法を提案
した。この方法は非共振法にもかかわらず通常のESR
の装置に極めて良く適合する。しかし、この方法は帯磁
率の実数部と虚数部がいつも混在した形で測定される不
具合があった。また、△Hの測定精度を上げようとする
と結合度をどんどん下げる必要があるため検出感度も低
下するという現象もあった。
The present inventor has already filed a patent application 6 as a method for solving this problem.
No. 0-175067 proposed a method of a straight waveguide with a matched load. Although this method is a non-resonant method,
Fits very well with However, this method has a problem that the real part and the imaginary part of the magnetic susceptibility are always measured in a mixed form. Further, there is a phenomenon in which the detection sensitivity is lowered because it is necessary to lower the binding degree in order to increase the measurement accuracy of ΔH.

本発明の目的は、通常のESRの装置に適合する非共振
法として整合負荷付直導波管法を用い、高感度で帯磁率
の虚数部と実数部を分けて測定する方法を提供すること
である。
An object of the present invention is to provide a highly sensitive method of separately measuring an imaginary part and a real part of magnetic susceptibility by using a direct waveguide method with a matched load as a non-resonant method suitable for an ordinary ESR device. Is.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、マイクロ波伝送線路の端部に整合負荷を設
け、該マイクロ波伝送線路の側部に結合部分を設け、測
定すべき強磁性体の試料を該結合部分にマイクロ波的に
結合させ、強磁性共鳴のために外部から静磁界を印加
し、該マイクロ波伝送線路の入力部からマイクロ波電力
を入射し、その反射波を測定する方法において、マイク
ロ波発振器の出力の一部を分岐して標準波とし、該反射
波と該標準波を干渉させ、この干渉波を整流して出力信
号とし、かつ該標準波の位相を変化させることにより、
該出力信号のマイクロ波帯磁率の実数部と虚数部を分離
して求めることを特徴とする強磁性共鳴吸収の測定方法
である。
The present invention provides a matching load at an end of a microwave transmission line, a coupling portion at a side portion of the microwave transmission line, and a ferromagnetic sample to be measured is coupled to the coupling portion in a microwave manner. In the method of applying a static magnetic field from the outside for ferromagnetic resonance, injecting microwave power from the input part of the microwave transmission line, and measuring the reflected wave, a part of the output of the microwave oscillator is branched. As a standard wave, the reflected wave and the standard wave are caused to interfere with each other, and the interference wave is rectified into an output signal, and the phase of the standard wave is changed,
A method for measuring ferromagnetic resonance absorption, characterized in that the real part and the imaginary part of the microwave susceptibility of the output signal are obtained separately.

〔本発明の理論的裏付け〕[Theoretical Support of the Present Invention]

本発明の測定装置では、第1図に示すような検出方法が
用いられる。試料から反射してくる微少な反射波er e=A・cos(ωt+φ) (1) 及びマイクロ波発振器の信号の一部を方向性結合器によ
り分岐して導かれる標準波e=B・cos(ωt+φ) (2) の両者が合成されeとなり、検出器2で整流される。
通常の動作状態ではe≪eであるので、すなわちA
≪Bが成立する。
The measuring apparatus of the present invention uses the detection method shown in FIG. A small reflected from the sample reflected wave er e r = A · cos ( ωt + φ r) (1) and micro standard wave guided branched by the directional coupler the part of the wave oscillator signal e s e s = B · cos (ωt + φ s) (2) both are synthesized e t next, it is rectified by a detector 2.
Because in normal operating conditions it is e r «e s, i.e. A
<< B holds.

=e+e =cosωt(Acosφ+Bcosφ) −sinωt(Asinφ+Bsinφ) =A′cosωt−B′sinωt (3a) ただし、 A′=Acosφ+Bcosφ (3b) B′=Asinφ+Bsinφ (3c) である。 e t = e r + e s = cosωt (Acosφ r + Bcosφ s) -sinωt (Asinφ r + Bsinφ s) = A'cosωt-B'sinωt (3a) However, A '= Acosφ r + Bcosφ s (3b) B' = Asinφ r + Bsinφ s (3c).

ダイオードのような検出器2により半波整流の場合に
は、実際には実効値の半分が検出されるので出力信号は となる。(3a),(3b),(3c)を(4)式に代入してA≪Bを
考慮して計算すると を得る。この出力信号は反射波eの振幅と標準波と反
射波の位相差の関数である。
In the case of half-wave rectification by the detector 2 such as a diode, half of the effective value is actually detected, so the output signal is Becomes Substituting equations (3a), (3b), and (3c) into equation (4), and calculating A << B To get This output signal is a function of the amplitude of the reflected wave e r and the phase difference between the standard wave and the reflected wave.

(5)式において、試料の強磁性共鳴の情報を含んでいる
ものはAとφである。通常のESRの出力信号は磁界
変調されたものである。そこで、(5)式を磁界で微分す
ると となる。ここでσは(10)式で示すように外部磁界に比例
する無次元数でσ=rHo/ωである。(6)式を変形す
ると次のようになる。
In equation (5), A and φ r contain the information about the ferromagnetic resonance of the sample. The output signal of a normal ESR is magnetic field modulated. Therefore, differentiating equation (5) with the magnetic field Becomes Here, σ is a dimensionless number proportional to the external magnetic field and is σ = rHo / ω as shown in the equation (10). The transformation of Eq. (6) is as follows.

標準信号の位相φがいろいろ変化すると出力信号も上
式に従って変化する。特別な場合として次の二つについ
て計算結果を示す。
When the phase φ s of the standard signal changes variously, the output signal also changes according to the above equation. As a special case, the following two calculation results are shown.

1)φ=0。この場合は、(7)式の第2項が零とな
る。
1) φ s = 0. In this case, the second term of equation (7) becomes zero.

2)φ=π/2。この場合は、(7)式の第1項が零と
なる。
2) φ s = π / 2. In this case, the first term of equation (7) becomes zero.

δv/δσ∝(δA/δσ)sinφr +Acosφr(δφr/δσ) (8
b) ただし、上式の第2項目の微分は とも表される。
δv / δσ∝ (δA / δσ) sinφr + Acosφr (δφr / δσ) (8
b) However, the derivative of the second item of the above equation is Is also represented.

本発明において、測定すべき試料とマイクロ波伝送線路
との結合状態は第2図の等価回路で表される。Zoは伝送
線路の特性インピーダンスである。rZoは整合負荷の実
数部分の特性インピーダンスからのずれを示す。点線の
LC共振回路は整合負荷のリアクタンス部分を表す。測
定周波数をこの共振周波数に選べばこのLC共振回路は
無視できる。直列に接続されたブロック内の回路定数は
装荷された強磁性試料を示す。βは線路と試料の結合状
態を表す定数である。
In the present invention, the coupling state between the sample to be measured and the microwave transmission line is represented by the equivalent circuit in FIG. Zo is the characteristic impedance of the transmission line. rZo is the deviation from the characteristic impedance of the real part of the matched load. The dotted LC resonant circuit represents the reactance portion of the matched load. This LC resonant circuit can be ignored if the measurement frequency is selected as this resonant frequency. Circuit constants in blocks connected in series represent loaded ferromagnetic samples. β is a constant indicating the coupling state between the line and the sample.

この等価回路は、第3図に示すように、強磁性共鳴の有
効磁界Ho=0,Ho=∞で帯磁率xの実数部x′(図
中点線)と虚数部x″(図中実線)の両方が零になるこ
とを考慮している。
As shown in FIG. 3, this equivalent circuit has a real part x ′ (dotted line) and an imaginary part x ″ (solid line) of the magnetic susceptibility x at an effective magnetic field Ho = 0, Ho = ∞ of ferromagnetic resonance. Both are considered to be zero.

ここで、強磁性共鳴近傍での複素帯磁率xの実数部と虚
数部はそれぞれ次式で表される(参考文献;小西著「フ
ェライトを用いた最近のマイクロは技術」電子通信学会
編 昭和40年 pp.10)。
Here, the real part and the imaginary part of the complex magnetic susceptibility x in the vicinity of the ferromagnetic resonance are respectively expressed by the following equations (reference: Konishi, "Recent Micro Technology Using Ferrites", The Institute of Electronics and Communication Engineers, Showa 40) Year pp.10).

ただし、ω=γ4πMs,ωi=γHo,αはGilber
t型の緩和定数である。ωはマイクロ波の角周波数,4
πMsは膜の飽和磁化,HoはKittelの共鳴条件式より
得られる有効磁界,γはgyromagneticratioである。
However, ω m = γ4πMs, ωi = γHo, α is Gilber
This is a t-type relaxation constant. ω is the angular frequency of the microwave, 4
πMs is the saturation magnetization of the film, Ho is the effective magnetic field obtained from Kittel's resonance condition, and γ is the gyromagnetic ratio.

このとき上記の特定周波数で入力端からみたインピーダ
ンスZは Z=Zo(1+r+βx″+jβx′) (11) で表される。このときの反射係数Γは となる。
At this time, the impedance Z seen from the input end at the above-mentioned specific frequency is expressed by Z = Zo (1 + r + βx ″ + jβx ′) (11). The reflection coefficient Γ at this time is Becomes

これを実数部と虚数部に分けて指数表示すると(12)式は Γ=Aexp(jφ) (13) と書ける。又、入射波の振幅が1とすれば(13)式は反射
波e=Acos(ωt+φ)の指数表示でもある。こ
こで、a=r+βx″,b=βx′とすると である。
When this is divided into a real part and an imaginary part and expressed as an index, Eq. (12) can be written as Γ = Aexp (jφ r ) (13). Further, if the amplitude of the incident wave is 1, the equation (13) is also an index representation of the reflected wave e r = Acos (ωt + φ r ). Here, if a = r + βx ″ and b = βx ′ Is.

<出力信号が非常に小さい場合> ここで特殊な場合として結合が極めて弱い状態(a,b
≪1)及びoff−resonanceの整合が良好である状態(r
≪1)を考えてみよう。この条件のもとでは(14)〜(17)
式は簡単になり となる。
<When output signal is very small> Here, as a special case, the state where the coupling is extremely weak (a, b
<< 1) and off-resonance matching is good (r
Consider << 1). Under these conditions (14)-(17)
The formula becomes simple Becomes

これを用いて(8a),(8b)式を計算する。Using this, Eqs. (8a) and (8b) are calculated.

1)φ=0の場合は次のようになる。1) When φ s = 0, the following is obtained.

この場合の信号は帯磁率の虚数部にのみ関係している。 The signal in this case is only related to the imaginary part of the magnetic susceptibility.

2)φ=π/2の場合は次のようになる。2) When φ s = π / 2, the following is obtained.

この場合の信号が帯磁率の実数部にのみ関係している。 The signal in this case is only related to the real part of the susceptibility.

このように出力信号が非常に小さい場合には標準信号の
位相を変えることにより帯磁率の実数部と虚数部を分け
て測定できる。第4図はω=1,α=0.001の場
合に計算した出力信号の外部磁界依存図である。φ
0の場合にはx″の微分曲線であるが、φ=π/2の
場合にはx′の微分曲線となる。それぞれの特異点から
△Hは計算できる。
When the output signal is very small as described above, the real part and the imaginary part of the magnetic susceptibility can be separately measured by changing the phase of the standard signal. FIG. 4 is an external magnetic field dependence diagram of the output signal calculated when ω m = 1 and α = 0.001. φ s =
When it is 0, it is a differential curve of x ″, but when φ s = π / 2, it is a differential curve of x ′. ΔH can be calculated from each singular point.

すなわちφ=0の場合には、曲線の山と谷の磁界間隔
△H′から真の△Hは となる。
That is, when φ s = 0, the true ΔH is calculated from the magnetic field interval ΔH ′ between the peak and the valley of the curve. Becomes

また、φ=π/2の場合には、曲線が零を切る磁界間
隔△H″と真の△Hは △H=△H″ (21) と同じになる。
When φ s = π / 2, the magnetic field interval ΔH ″ at which the curve crosses zero and the true ΔH are the same as ΔH = ΔH ″ (21).

<一般的取り扱い> 結合が強い場合には、(14)〜(17)式は簡単にならずその
まま数値計算しなければならない。
<General treatment> When the bond is strong, the equations (14) to (17) must be numerically calculated as they are.

1)φ=0の場合、出力信号は次のようになる。1) When φ s = 0, the output signal is as follows.

2)φ=π/2の場合、出力信号は次のようになる。 2) When φ s = π / 2, the output signal is as follows.

第5図は(22)式を結合係数βと残留抵抗rをパラメータ
にして数値計算した出力信号の外部磁界依存図である。
曲線は点対称のため半分しか示していない。結合係数β
が大きくなるにつれて見かけ上の△H′が次第に大きく
なってゆくのが分かる。また、残留抵抗rの存在は△H
の測定値にはほとんど影響を与えない。第6図は結合係
数βから計算した反射電力を横軸に、縦軸に△Hの補正
係数を取った場合の曲線を示す。反射電力比が10以上
になると急激に補正係数が大きくなることがわかる。
FIG. 5 is an external magnetic field dependence diagram of the output signal obtained by numerical calculation of the equation (22) using the coupling coefficient β and the residual resistance r as parameters.
The curves are point symmetric, so only half are shown. Coupling coefficient β
It can be seen that the apparent ΔH 'gradually increases with increasing. The presence of residual resistance r is ΔH
Has almost no effect on the measured value of. FIG. 6 shows a curve when the reflected power calculated from the coupling coefficient β is taken on the horizontal axis and the correction coefficient of ΔH is taken on the vertical axis. It can be seen that the correction coefficient rapidly increases when the reflected power ratio becomes 10 or more.

〔実施例〕〔Example〕

第1図は、本発明の第2図の原理等価回路を実現するた
めの一実施例を示す測定装置のブロック図である。直導
波管10が測定腕となり、電磁石のポールピース5a,5b
の間に入る。整合負荷11が直導波管10の終端に接続
されている。試料4は、磁界分布のできるだけ均一な部
分に配され、本実施例の図では試料は結合孔を介した導
波管の外部に置かれている。当然試料4は導波管の内部
にあってもかまわない。
FIG. 1 is a block diagram of a measuring apparatus showing an embodiment for realizing the principle equivalent circuit of FIG. 2 of the present invention. The direct waveguide 10 serves as a measuring arm, and the pole pieces 5a and 5b of the electromagnet are used.
Enter between The matching load 11 is connected to the end of the direct waveguide 10. The sample 4 is arranged in a portion where the magnetic field distribution is as uniform as possible, and in the drawing of this embodiment, the sample is placed outside the waveguide through the coupling hole. Of course, the sample 4 may be inside the waveguide.

又、標準波はマイクロ波発振器の出力の一部を分岐し
て、移相器13を介して検出部2で反射波と混合され
る。
Further, the standard wave splits a part of the output of the microwave oscillator, and is mixed with the reflected wave in the detection unit 2 via the phase shifter 13.

第1図の本発明の原理ブロック図から分かるように、強
磁性共鳴を生じない場合、入射電力Piはそのまま整合
負荷11で消費されるので、反射電力Prは著しく小さ
い。即ち、Pr≪Piが成立する。ポールピース5a,5b
により磁界が発生し、試料4がマイクロ波と強磁性共鳴
状態になると、直導波管のインピーダンスが変化して反
射波が生じ、検出器の出力に信号が現れる。第7図は、
第1図の実施例で用いられた直導波管と整合負荷の実際
の寸法を示す。約6mmφの結合孔が導波管のH面に開け
られている。
As can be seen from the block diagram of the principle of the present invention in FIG. 1, when the ferromagnetic resonance does not occur, the incident power Pi is consumed by the matching load 11 as it is, and the reflected power Pr is extremely small. That is, Pr << Pi holds. Pole pieces 5a, 5b
When a magnetic field is generated by this and the sample 4 is brought into a ferromagnetic resonance state with the microwave, the impedance of the direct waveguide changes to generate a reflected wave, and a signal appears at the output of the detector. Figure 7 shows
The actual dimensions of the straight waveguide and the matching load used in the embodiment of FIG. 1 are shown. A coupling hole of about 6 mmφ is opened in the H surface of the waveguide.

試料の保持の仕方としては、治具に試料を取り付けて該
結合孔から直導波管の中に挿入することが考えられる。
又、別の方法としては第8図に示すように板状の試料4
aを結合孔12に外部から近接もしくは接触させるとい
うことも考えられる。一般のプロセスでは、LPE膜付
きウェーハーを加工することなく、できるだけ早くその
物性を調べる必要があるので第8図の方法が実用的であ
る。
As a method of holding the sample, it is possible to attach the sample to the jig and insert the sample into the straight waveguide through the coupling hole.
Alternatively, as another method, as shown in FIG.
It is also conceivable that a is brought close to or in contact with the coupling hole 12 from the outside. In a general process, it is necessary to examine the physical properties of the wafer with the LPE film as soon as possible without processing the wafer, so the method of FIG. 8 is practical.

又、他の実施例として、導波管のE面に同じような結合
孔を開けた実験を行ったが、前述の実施例のH面の場合
に比較して両者に大きな差を見いだすことができなかっ
た。
Further, as another example, an experiment was conducted in which a similar coupling hole was formed on the E-face of the waveguide, but it was possible to find a large difference between them in comparison with the case of the H-face of the above-mentioned embodiment. could not.

約1mmφのGa置換YIG球(4πMs=400G)を用
いて本方式により強磁性共鳴吸収曲線を測定した。直導
波管の結合孔の寸法は6mmφを用い、第9図のように球
状試料4bはスライドガラス16の上にセロテープ15
aで貼り付けた。第10図がこの測定結果である。主共
鳴は約3170〔Oe〕で起こる。他の吸収は、約25
〔Oe〕の低磁界側に僅かな信号が見られるだけで、それ
以外はなにも観測されなかった。
The ferromagnetic resonance absorption curve was measured by this method using a Ga-substituted YIG sphere (4πMs = 400G) of about 1 mmφ. The dimension of the coupling hole of the straight waveguide is 6 mmφ, and the spherical sample 4b is placed on the slide glass 16 with the scotch tape 15 as shown in FIG.
It was pasted with a. FIG. 10 shows the measurement result. The main resonance occurs at about 3170 [Oe]. Other absorption is about 25
Only a slight signal was observed on the low magnetic field side of [Oe], and nothing else was observed.

前述の第4図でφを変えた場合の検出波形の計算結果
を述べた。これを確認するために、このGa置換YIG球
を用いて同様な実験を行った。第11図がこの結果であ
る。装置の関係で移相器の位相変化量は数値として測定
できなかったが、図中に移相器のツマミの回転数を示
す。−1,−2,−3,−4はそれぞれ基準状態より半
時計方向に回転した数である。第4図と第12図を比較
してみると分かるように両者の変化の仕方は定性的に極
めてよく似ている。特に、測定された△H′と△H″は の違いがあり、理論的予測とほとんど同じである。この
ことは本発明の計算モデルがかなり正しいことを裏付け
ている。
The calculation result of the detected waveform when φ s is changed is described in FIG. 4 described above. To confirm this, a similar experiment was conducted using this Ga-substituted YIG sphere. FIG. 11 shows the result. The phase change amount of the phase shifter could not be measured numerically due to the device, but the number of rotations of the knob of the phase shifter is shown in the figure. -1, -2, -3, and -4 are the numbers rotated counterclockwise from the reference state, respectively. As can be seen by comparing FIGS. 4 and 12, the changes in the two are very similar qualitatively. In particular, the measured ΔH ′ and ΔH ″ are , Which is almost the same as the theoretical prediction. This confirms that the computational model of the present invention is quite correct.

第12図は、1インチの直径のGGG(Gadolunium Gal
lium Garnet)ウェーハーの上に作製された約20μm
の厚みのYIG(Yttrium Iron Garnet)のLPE(Liq
uid Phase Epitoxial)厚膜を結合孔の外側から第8図
のように接触させて9.03GHzの周波数で測定したデ
ータである。結合孔の直径は6mmφを用いた。この図か
ら見かけ上の△H′は0.42〔Oe〕と測定され、真の
△Hは し、0.73〔Oe〕となる。又、強磁性共鳴磁界が5000
〔Oe〕であることから、Kittelの共鳴条件式 ω=γ(Hext−4πMs) より、4πMsを求めると4πMs=1756〔Oe〕が
得られる。この値はYIGの飽和磁化として他の文献値
1800Gとほぼ等しい。
FIG. 12 shows a 1 inch diameter GGG (Gadolunium Gal).
Lium Garnet) Approximately 20 μm fabricated on a wafer
Thickness of YIG (Yttrium Iron Garnet) LPE (Liq
uid Phase Epitoxial) Data obtained by contacting a thick film from the outside of the coupling hole as shown in FIG. 8 at a frequency of 9.03 GHz. The diameter of the coupling hole was 6 mmφ. From this figure, the apparent ΔH 'is measured as 0.42 [Oe], and the true ΔH is It becomes 0.73 [Oe]. Also, the ferromagnetic resonance magnetic field is 5000
Since it is [Oe], 4πMs = 1756 [Oe] is obtained by calculating 4πMs from the Kittel resonance conditional expression ω = γ (Hext−4πMs). This value is almost equal to the other literature value 1800G as the saturation magnetization of YIG.

第13図は、本発明の他の実施例である該マイクロ波伝
送線路として同軸線路を用いた場合である。約2GHz以
下の周波数帯での測定に適した伝送線路である。
FIG. 13 shows another embodiment of the present invention in which a coaxial line is used as the microwave transmission line. It is a transmission line suitable for measurement in the frequency band below about 2 GHz.

なお、マイクロ波伝送線路の実施例としては、導波管と
同軸線路しか示さなかったが、マイクロストリップ線路
や誘電体導波路のような他のマイクロ波伝送線路におい
ても、本発明の効果が有効であることは、本技術に係わ
る専用家であれば、容易に理解できるであろう。
Although only the waveguide and the coaxial line are shown as examples of the microwave transmission line, the effect of the present invention is also effective in other microwave transmission lines such as a microstrip line and a dielectric waveguide. It can be easily understood by a private house related to the present technology.

〔発明の効果〕〔The invention's effect〕

本発明の測定方法によれば、従来、測定困難であった低
△Hの試料や寸法の大きい試料の強磁性共鳴吸収を比較
的簡単に測定できる。又、標準波の位相を変化させるこ
とにより強磁性体のマイクロ波帯磁率の虚数部と実数部
を分けて測定できる。
According to the measuring method of the present invention, it is possible to relatively easily measure the ferromagnetic resonance absorption of a sample of low ΔH or a sample of large size, which has been difficult to measure conventionally. Also, by changing the phase of the standard wave, the imaginary part and the real part of the microwave susceptibility of the ferromagnetic material can be measured separately.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の根幹を成す検波方法と整合負荷付直導
波管法の組み合わせブロック図、第2図は本発明に用い
た非共振法の等価回路図、第3図はマイクロ波帯磁率の
実数部と虚数部の外部磁界依存図、第4図及び第5図は
本発明による出力信号の外部磁界依存図、第6図は反射
電力比と△Hの補正係数の関係図、第7図は本発明の一
実施例を示す整合負荷付直導波管の組み立て図、第8図
及び第9図は本発明の実施例による試料の取り付け図、
第10図,第11図及び第12図は本発明による検出信
号の外部磁界依存図、第13図は本発明の他の実施例を
示す伝送線路と試料の配置図、第14図は従来技術によ
る共振法を用いた測定装置のブロック図、第15図は従
来技術による非共振法を用いた測定装置のブロック図で
ある。
FIG. 1 is a block diagram of a combination of a detection method and a direct waveguide method with a matching load, which are the basis of the present invention, FIG. 2 is an equivalent circuit diagram of the non-resonant method used in the present invention, and FIG. External magnetic field dependence diagrams of the real and imaginary parts of the ratio, FIGS. 4 and 5 are external magnetic field dependence diagrams of the output signal according to the present invention, and FIG. 6 is a relationship diagram of the reflected power ratio and the correction coefficient of ΔH, FIG. 7 is an assembly view of a direct waveguide with a matching load showing an embodiment of the present invention, FIGS. 8 and 9 are attachment views of a sample according to an embodiment of the present invention,
10, 11 and 12 are external magnetic field dependence diagrams of detection signals according to the present invention, FIG. 13 is a layout diagram of a transmission line and a sample showing another embodiment of the present invention, and FIG. 14 is a conventional technique. FIG. 15 is a block diagram of a measuring device using the resonance method according to FIG. 15, and FIG. 15 is a block diagram of a measuring device using the non-resonance method according to the related art.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】マイクロ波伝送線路の端部に整合負荷を設
け、該マイクロ波伝送線路の側部に結合部分を設け、測
定すべき強磁性体の試料を該結合部分にマイクロ波的に
結合させ、強磁性共鳴のために外部から静磁界を印加
し、該マイクロ波伝送線路の入力部からマイクロ波電力
を入射し、その反射波を測定するマイクロ波装置におい
て、マイクロ波電力を発生するマイクロ波発振器の出力
の一部を分岐して標準波として、該反射波と該標準波を
干渉させ、この干渉波を整流して出力信号とし、該標準
波の位相を変化させることにより、該出力信号からマイ
クロ波帯磁率の実数部と虚数部を分離して求めることを
特徴とする強磁性共鳴吸収の測定方法。
1. A matching load is provided at an end of a microwave transmission line, a coupling portion is provided at a side portion of the microwave transmission line, and a sample of a ferromagnetic material to be measured is microwave-coupled to the coupling portion. In a microwave device that applies a static magnetic field from the outside for ferromagnetic resonance, injects microwave power from the input portion of the microwave transmission line, and measures the reflected wave, a microwave device that generates microwave power is used. A part of the output of the wave oscillator is branched into a standard wave, the reflected wave and the standard wave are caused to interfere with each other, the interference wave is rectified into an output signal, and the phase of the standard wave is changed to output the output. A method for measuring ferromagnetic resonance absorption, characterized in that a real part and an imaginary part of a microwave magnetic susceptibility are separately obtained from a signal.
JP61157275A 1986-07-04 1986-07-04 Method for measuring ferromagnetic resonance absorption Expired - Lifetime JPH0641970B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61157275A JPH0641970B2 (en) 1986-07-04 1986-07-04 Method for measuring ferromagnetic resonance absorption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61157275A JPH0641970B2 (en) 1986-07-04 1986-07-04 Method for measuring ferromagnetic resonance absorption

Publications (2)

Publication Number Publication Date
JPS6312982A JPS6312982A (en) 1988-01-20
JPH0641970B2 true JPH0641970B2 (en) 1994-06-01

Family

ID=15646091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61157275A Expired - Lifetime JPH0641970B2 (en) 1986-07-04 1986-07-04 Method for measuring ferromagnetic resonance absorption

Country Status (1)

Country Link
JP (1) JPH0641970B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11397226B2 (en) * 2018-01-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices

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JP6660842B2 (en) * 2016-07-28 2020-03-11 国立大学法人京都大学 Relaxation time measuring method and magnetic resonance measuring apparatus
JP7380392B2 (en) * 2020-03-31 2023-11-15 横河電機株式会社 Magnetic detection device and magnetic detection method
CN113820034B (en) * 2020-12-11 2023-09-29 中冶长天国际工程有限责任公司 An online temperature measurement method in microwave field
CN118777945B (en) * 2024-06-20 2026-04-28 山东大学 A magnetic field sensitive detection device and method based on gain resonant cavity-magnetic resonance coupling

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5180284A (en) * 1975-01-09 1976-07-13 Nippon Electron Optics Lab DENSHI SUPINKYOMEISOCHI
JPS6038671A (en) * 1983-08-10 1985-02-28 Nec Corp Esr measurement automating system
JPS6235275A (en) * 1985-08-09 1987-02-16 Hitachi Metals Ltd Measuring method for ferromagnetic resonance absorption

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11397226B2 (en) * 2018-01-19 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices

Also Published As

Publication number Publication date
JPS6312982A (en) 1988-01-20

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