JPH0642455B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPH0642455B2 JPH0642455B2 JP59243765A JP24376584A JPH0642455B2 JP H0642455 B2 JPH0642455 B2 JP H0642455B2 JP 59243765 A JP59243765 A JP 59243765A JP 24376584 A JP24376584 A JP 24376584A JP H0642455 B2 JPH0642455 B2 JP H0642455B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- heat
- phase growth
- infrared lamp
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
Landscapes
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、気相成長装置、特に半導体工業で利用される
Ｓｉ（シリコン）ウエハへの気相成長装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus, and more particularly to an apparatus for vapor phase growth on a Si (silicon) wafer used in the semiconductor industry.
従来の技術 半導体工業においては、シリコン基板上に反応ガスを供
給して、その基板表面上に反応物の膜を形成する工程が
ある。その中でも特に減圧気相成長工程では、減圧状態
で基板を適当な温度に加熱し、その表面に、モノシラン
またはジクロルシランとヘリウムの混合ガスに、アンモ
ニアあるいはホスフィンあるいは、酸素を添加すること
により、シリコン窒化膜、ポリシリコン、シリコン酸化
膜を生成する。この減圧気相成長方法は、反応ガス、キ
ャリヤガスの平均自由行程、拡散定数が大となり、常圧
気相成長方法に比べ、膜厚、比抵抗の均一性がよく最近
この減圧気相成長方法が主流になってきている。2. Description of the Related Art In the semiconductor industry, there is a step of supplying a reaction gas onto a silicon substrate to form a reactant film on the surface of the substrate. Among them, particularly in the reduced pressure vapor phase growth step, the substrate is heated to a suitable temperature in a reduced pressure state, and ammonia or phosphine or oxygen is added to the mixed gas of monosilane or dichlorosilane and helium on the surface of the substrate, so that silicon nitriding is performed. A film, polysilicon, and a silicon oxide film are formed. This reduced pressure vapor phase growth method has a large mean free path of reaction gas and carrier gas and a large diffusion constant, and is more uniform in film thickness and specific resistance than the atmospheric pressure vapor phase growth method. It is becoming mainstream.
以下図面を参照しながら、上述した従来の減圧気相成長
装置の一例について説明する。第３図は従来の減圧気相
成長装置を示すものである。第３図において、１は石英
反応管、２は半導体基板で石英ボート３によって固定さ
れている。４はガスの排出口、５はガスの供給口であ
る。６はヒーター、７は半導体基板２を出し入れするた
めの蓋である。An example of the above-described conventional reduced pressure vapor phase growth apparatus will be described below with reference to the drawings. FIG. 3 shows a conventional reduced pressure vapor phase growth apparatus. In FIG. 3, 1 is a quartz reaction tube and 2 is a semiconductor substrate fixed by a quartz boat 3. Reference numeral 4 is a gas discharge port, and 5 is a gas supply port. Reference numeral 6 is a heater, and 7 is a lid for loading and unloading the semiconductor substrate 2.
以上のように構成された減圧気相成長装置について、以
下その動作について説明する。The operation of the low pressure vapor phase growth apparatus configured as described above will be described below.
まず、半導体基板２を載置した石英ボート３を蓋７から
挿入し、蓋７を閉め0.8Torrまで真空に引きヒーター６
で昇温し、６００℃に保って、ヘリウムガスをリャリヤ
としてモノシランを流し、ポリシリコン膜を生成させ
る。半導体基板２を取り出すときは、ヒーター６を切り
降温し、常圧に戻して蓋７から取り出す。First, the quartz boat 3 on which the semiconductor substrate 2 is placed is inserted from the lid 7, the lid 7 is closed, and the heater 6 is evacuated to 0.8 Torr.
The temperature is raised at 600 ° C. and the temperature is maintained at 600 ° C., and monosilane is caused to flow using helium gas as a carrier to form a polysilicon film. When the semiconductor substrate 2 is taken out, the heater 6 is turned off, the temperature is lowered, the pressure is returned to normal pressure, and the semiconductor substrate 2 is taken out from the lid 7.
しかしながら上記のような構成では、ヒーターを使用し
ているため昇降温に時間がかかる。However, in the above configuration, since the heater is used, it takes time to raise and lower the temperature.
次に従来の技術として、上記加熱方法の他に減圧で単結
晶膜を形成する手段として使用されている急速・急冷が
可能な赤外線ランプによる加熱方法がある。この赤外線
ランプ加熱法をポリシリコン膜形成に応用した気相成長
装置の一例について説明する。第４図は赤外線ランプを
使用した気相成長装置を示すものである。第４図におい
て、赤外線透過容器としての石英ベルジャー８とベース
板９とによって完全に外気を遮断することができるよう
になっており、ベース板９には反応ガスを供給するため
のガス供給管１０と、反応ガスを排出するためのガス排
出口１１が取り付けられている。またベース板９には、
半導体基板１２を載置する基台１３（以下サセプタと呼
ぶ。）が設置されている。また石英ベルジャー８の上部
外側には、半導体基板１２を加熱するための赤外線ラン
プ１４と、赤外線ランプ１４の光線を効率よくベルジャ
ー８内の半導体基板１２に照射するための反射鏡１５が
取り付けられている。Next, as a conventional technique, there is a heating method using an infrared lamp capable of rapid and rapid cooling, which is used as a means for forming a single crystal film under reduced pressure, in addition to the above heating method. An example of a vapor phase growth apparatus in which this infrared lamp heating method is applied to form a polysilicon film will be described. FIG. 4 shows a vapor phase growth apparatus using an infrared lamp. In FIG. 4, a quartz bell jar 8 serving as an infrared ray transmitting container and a base plate 9 can completely block the outside air, and a gas supply pipe 10 for supplying a reaction gas to the base plate 9 is provided. And a gas discharge port 11 for discharging the reaction gas is attached. Also, the base plate 9
A base 13 (hereinafter referred to as a susceptor) on which the semiconductor substrate 12 is placed is installed. An infrared lamp 14 for heating the semiconductor substrate 12 and a reflecting mirror 15 for efficiently irradiating the semiconductor substrate 12 in the bell jar 8 with the light rays of the infrared lamp 14 are attached to the outer side of the upper part of the quartz bell jar 8. There is.
以上のように構成された減圧気相成長装置について、以
下その動作を説明する。The operation of the low pressure vapor phase growth apparatus configured as described above will be described below.
まず赤外線ランプ１４によってサセプタ１３及び半導体
基板１２は６００℃程度の温度に加熱される。一方図示
されていないガス供給装置で、ヘリウムをキャリヤガス
としてモノシランとの混合ガスがガス供給管１０から供
給される。この混合ガスは、排出口１１に向かって流
れ、この時サセプタ１３および半導体基板１２に接触し
て熱を奪い所定温度以上に達した反応ガス分子が分解析
出して膜を形成する。（例えば最新ＬＳＩプロセス技術
（工業調査会）Ｐ208〜Ｐ229） 発明が解決しようとする問題点 しかしながら上記の構成では、加熱方法として赤外線ラ
ンプ１４を使用しているため、赤外線ランプ１４直下の
半導体基板１２上の点と、赤外線ランプ１４間の直下の
半導体基板１２上の点とでは、半導体基板１２上で温度
が異なる。また赤外線ランプ１の軸方向の直下について
も、半導体基板１２上で温度が異なってくる。このた
め、半導体基板１２上で、温度のバラツキが大きく、そ
のため、気相成長させた膜の膜厚は、均一性が悪いとい
う欠点を有していた。First, the infrared lamp 14 heats the susceptor 13 and the semiconductor substrate 12 to a temperature of about 600 ° C. On the other hand, in a gas supply device (not shown), a mixed gas of monosilane and helium is supplied from the gas supply pipe 10. This mixed gas flows toward the outlet 11, and at this time contacts the susceptor 13 and the semiconductor substrate 12 to remove heat and the reactive gas molecules that have reached a predetermined temperature or higher are decomposed and deposited to form a film. (For example, latest LSI process technology (Industry Research Group) P208 to P229) Problems to be Solved by the Invention However, in the above configuration, since the infrared lamp 14 is used as the heating method, the semiconductor substrate 12 immediately below the infrared lamp 14 is used. The temperature on the semiconductor substrate 12 is different between the above point and the point on the semiconductor substrate 12 directly below the infrared lamp 14. Further, the temperature is different on the semiconductor substrate 12 immediately below the infrared lamp 1 in the axial direction. For this reason, there is a large temperature variation on the semiconductor substrate 12, and therefore the film thickness of the vapor-grown film has a drawback that the uniformity is poor.
本発明は上記問題点に鑑み、昇温、降温が速くかつ膜厚
の均一性の良い気相成長装置を提供するものである。In view of the above-mentioned problems, the present invention provides a vapor phase growth apparatus capable of quickly raising and lowering the temperature and having good film thickness uniformity.
問題点を解決するための手段 上記問題点を解決するために本発明は、ガスを供給する
ガス供給管とガスを排気するガス排出口とを有する光透
過及び耐熱性容器と、前記耐熱性容器内にあって、半導
体基板を載置させる基台と、前記基台を前記耐熱性容器
の外部から加熱するための赤外線ランプと、前記赤外線
ランプと前記基台の間に位置し、前記赤外線ランプの光
線を吸収し二次光源となって前記基台を輻射加熱する中
間板とから構成されたものである。Means for Solving the Problems To solve the above problems, the present invention provides a light-transmitting and heat-resistant container having a gas supply pipe for supplying gas and a gas outlet for discharging gas, and the heat-resistant container. A base on which a semiconductor substrate is placed, an infrared lamp for heating the base from the outside of the heat resistant container, and the infrared lamp located between the infrared lamp and the base. And an intermediate plate that absorbs the above-mentioned light rays and serves as a secondary light source to radiatively heat the base.
作用 本発明は上記した構成によって、赤外線ランプから輻射
された光は、中間板に一部吸収される。そのため中間板
自体が熱源となり、半導体基板は、中間板からも均一な
熱輻射を受け、温度の均一性が良くなり、ひいては、気
相成長したときの膜厚分布の均一性が向上する。Action According to the present invention, the light radiated from the infrared lamp is partially absorbed by the intermediate plate by the above-described configuration. For this reason, the intermediate plate itself serves as a heat source, the semiconductor substrate receives uniform heat radiation from the intermediate plate, the temperature uniformity is improved, and the uniformity of the film thickness distribution upon vapor phase growth is improved.
実施例 以下本発明の一実施例の気相成長装置について、図面を
参照しながら説明する。Example A vapor phase growth apparatus according to an example of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例における気相成長装置の断面
図を示すものである。従来例と同一部品については、同
一番号とする。FIG. 1 is a sectional view of a vapor phase growth apparatus in one embodiment of the present invention. The same parts as those in the conventional example have the same numbers.
第１図において、８は石英ベルジャー、９はベース板、
１０はガス供給管、１１はガス排出口、１２は半導体基
板、１３はサセプタ、１４は赤外線ランプ、１５は反射
鏡、１６は、上面がシリコン薄膜を形成した石英ガラス
からなる中間板である。第２図は、第１図１６の斜視図
である。In FIG. 1, 8 is a quartz bell jar, 9 is a base plate,
Reference numeral 10 is a gas supply pipe, 11 is a gas outlet, 12 is a semiconductor substrate, 13 is a susceptor, 14 is an infrared lamp, 15 is a reflecting mirror, and 16 is an intermediate plate made of quartz glass having a silicon thin film formed on its upper surface. FIG. 2 is a perspective view of FIG.
以上のように構成された気相成長装置について、以下第
１図を用いて説明する。The vapor phase growth apparatus configured as described above will be described below with reference to FIG.
赤外線透過率が約９０％程度である石英ベルジャー８
は、赤外線ランプ１４からの光を透過し、さらにその透
過した光は、上面がシリコン薄膜を形成した石英ガラス
からなる中間板１６に到達する。シリコン薄膜を形成し
た石英ガラスは、石英ガラスに比べて光の透過率が６０
〜７０％と低くそのため逆に中間板１６に吸収される割
合が増える。そのため中間板１６も二次光源となり、輻
射熱によって、赤外線ランプとともに、半導体基板１２
を、約６００℃の温度に加熱する。このように赤外線ラ
ンプ１４の光線だけでなく、中間板１６からの熱輻射が
加わって、半導体基板１２を加熱する。一方図示されて
いないガス供給装置で、ヘリウムをキャリヤガスとして
モノシランとの混合ガスがガス供給管１０から供給され
る。この混合ガスは排出口１１に向かって流れ、この時
サセプタ１３および半導体基板１２に接触して熱を奪い
所定温度以上に達した反応ガス分子が分解析出して膜を
形成する。Quartz bell jar 8 with infrared transmittance of about 90%
Transmits the light from the infrared lamp 14, and the transmitted light reaches the intermediate plate 16 made of quartz glass having an upper surface formed with a silicon thin film. Quartz glass on which a silicon thin film is formed has a light transmittance of 60 compared to quartz glass.
Since it is as low as 70%, the ratio absorbed by the intermediate plate 16 is increased. Therefore, the intermediate plate 16 also serves as a secondary light source, and the radiant heat causes the semiconductor substrate 12 together with the infrared lamp.
Is heated to a temperature of about 600 ° C. Thus, not only the light rays of the infrared lamp 14 but also the heat radiation from the intermediate plate 16 is applied to heat the semiconductor substrate 12. On the other hand, in a gas supply device (not shown), a mixed gas of monosilane and helium is supplied from the gas supply pipe 10. The mixed gas flows toward the exhaust port 11, and at this time, the reactive gas molecules contacting the susceptor 13 and the semiconductor substrate 12 to remove heat and reach a predetermined temperature or higher are decomposed and deposited to form a film.
以上のように本実施例によれば、ガスを供給するガス供
給管とガスを排気するガス排気口とを有する光透過及び
耐熱性容器と、前記耐熱性容器内にあって、半導体基板
を載置させる基台と、前記基台を前記耐熱性容器の外部
から加熱するための赤外線ランプを有した気相成長装置
において、前記赤外線ランプと前記基台の間に、シリコ
ン薄膜を形成した石英ガラスからなる中間板を設けるこ
とにより、前記中間板は二次光源となり、その光源は板
状であるため均一は輻射源となって前記赤外線ランプと
ともに半導体基板を輻射加熱することになる。As described above, according to the present embodiment, a light-transmitting and heat-resistant container having a gas supply pipe for supplying gas and a gas exhaust port for exhausting gas, and a semiconductor substrate mounted in the heat-resistant container. In a vapor phase growth apparatus having a base to be placed and an infrared lamp for heating the base from the outside of the heat resistant container, quartz glass having a silicon thin film formed between the infrared lamp and the base. By providing the intermediate plate consisting of, the intermediate plate becomes a secondary light source, and since the light source is plate-shaped, it uniformly serves as a radiation source to radiatively heat the semiconductor substrate together with the infrared lamp.
そのため、前記赤外線ランプとともに均一な輻射源が加
わることになり、半導体基板上の温度均一性が向上し、
堆積した膜の膜厚分布の均一性が向上する。また熱光源
として赤外線ランプを使用しているため、急熱急冷も同
時に可能となる。Therefore, a uniform radiation source is added together with the infrared lamp, improving the temperature uniformity on the semiconductor substrate,
The uniformity of the film thickness distribution of the deposited film is improved. Moreover, since an infrared lamp is used as a heat source, rapid heating and rapid cooling are possible at the same time.
なお、本実施例において、石英ベルジャー８は石英とし
たが、石英ベルジャー８は耐熱性かつ光透過性で、堆積
する膜を形成するために流す反応ガスと非反応の物質で
あればよい。In this embodiment, the quartz bell jar 8 is made of quartz, but the quartz bell jar 8 may be made of any material that is heat-resistant and light-transmissive and does not react with the reaction gas flowing to form the deposited film.
また、中間板１６は、石英ガラスにシリコン薄膜を形成
したものとしたが、堆積する膜を形成するために流す反
応ガスと非反応の物質でかつ耐熱性であればどのような
物質でもよい。また、形成物質はシリコン薄膜とした
が、加熱光線を吸収する膜性能を有するものであれば良
く、特にシリコン薄膜に限定するものではない。Further, although the intermediate plate 16 is formed by forming a silicon thin film on quartz glass, any substance may be used as long as it is a substance that does not react with the reaction gas flowing to form the deposited film and is heat resistant. Further, although the silicon thin film was used as the forming material, any substance having a film performance of absorbing a heating ray may be used, and the material is not particularly limited to the silicon thin film.
また、本実施例では、ポリシリコンに適用したが、シリ
コン窒化膜、シリコン酸化膜等の気相成長に適用できる
ことはいうまでもない。In addition, although the present embodiment is applied to polysilicon, it goes without saying that it can be applied to vapor phase growth of a silicon nitride film, a silicon oxide film, or the like.
発明の効果 以上のように本発明は、ガスを供給するガス供給管とガ
スを排気するガス排気口とを有する光透過及び耐熱性容
器と、前記耐熱性容器内にあって、半導体基板を載置さ
せる基台と、前記基台を前記耐熱性容器の外部から加熱
するための赤外線ランプを有した気相成長装置におい
て、前記赤外線ランプと前記基台の間に、シリコン薄膜
を形成した石英ガラスからなる中間板を設けることによ
り、急速加熱、急速冷却を可能としかつ膜厚の均一性の
良い膜を形成することができる。Effects of the Invention As described above, the present invention provides a light-transmitting and heat-resistant container having a gas supply pipe for supplying gas and a gas exhaust port for exhausting gas, and a semiconductor substrate mounted in the heat-resistant container. In a vapor phase growth apparatus having a base to be placed and an infrared lamp for heating the base from the outside of the heat resistant container, quartz glass having a silicon thin film formed between the infrared lamp and the base. By providing the intermediate plate consisting of, it is possible to form a film which enables rapid heating and rapid cooling and has a good film thickness uniformity.
第１図は本発明の一実施例における気相成長装置の説明
図、第２図は中間板の斜視図、第３図は従来の気相成長
装置を示す説明図、第４図は従来の他の気相成長装置を
示す説明図である。 ８……石英ベルジャー、９……ベース板、１０……ガス
供給管、１１……排出口、１２……半導体ウエハ、１３
……サセプタ、１４……赤外線ランプ、１５……反射
鏡、１６……中間板。FIG. 1 is an explanatory view of a vapor phase growth apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of an intermediate plate, FIG. 3 is an explanatory view showing a conventional vapor phase growth apparatus, and FIG. It is explanatory drawing which shows another vapor phase growth apparatus. 8 ... Quartz bell jar, 9 ... Base plate, 10 ... Gas supply pipe, 11 ... Discharge port, 12 ... Semiconductor wafer, 13
... Susceptor, 14 ... Infrared lamp, 15 ... Reflector, 16 ... Intermediate plate.
Claims (3)
るガス排出口とを有する光透過及び耐熱性容器と、前記
耐熱性容器内にあって、半導体基板を載置させる基台
と、前記基台を前記耐熱性容器の外部から加熱するため
の赤外線ランプと、前記赤外線ランプと前記基台の間に
位置し、前記赤外線ランプの光線を吸収し二次光源とな
って前記基台を輻射加熱する耐熱性物質からなる中間板
とを備えたことを特徴とする気相成長装置。1. A light-transmissive and heat-resistant container having a gas supply pipe for supplying gas and a gas outlet for exhausting gas, and a base for mounting a semiconductor substrate in the heat-resistant container. An infrared lamp for heating the base from the outside of the heat-resistant container, is located between the infrared lamp and the base, absorbs the light of the infrared lamp, and serves as a secondary light source for the base. A vapor phase growth apparatus comprising: an intermediate plate made of a heat-resistant substance that is heated by radiation.
て、前記半導体基板上に堆積させる膜と同じ物質からな
る特許請求の範囲第１項記載の気相成長装置。2. The vapor phase growth apparatus according to claim 1, wherein the intermediate plate is made of the same material as the film to be deposited on the semiconductor substrate in the heat resistant container.
て、シリコン薄膜を片面又は両面に形成した石英ガラス
板である特許請求の範囲第１項記載の気相成長装置。3. The vapor phase growth apparatus according to claim 1, wherein the intermediate plate is a quartz glass plate in which the silicon thin film is formed on one side or both sides in the heat resistant container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59243765A JPH0642455B2 (en) | 1984-11-19 | 1984-11-19 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59243765A JPH0642455B2 (en) | 1984-11-19 | 1984-11-19 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61121431A JPS61121431A (en) | 1986-06-09 |
| JPH0642455B2 true JPH0642455B2 (en) | 1994-06-01 |
Family
ID=17108644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59243765A Expired - Lifetime JPH0642455B2 (en) | 1984-11-19 | 1984-11-19 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0642455B2 (en) |
-
1984
- 1984-11-19 JP JP59243765A patent/JPH0642455B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61121431A (en) | 1986-06-09 |
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