JPH0643270B2 - Low temperature sintered porcelain composition for multilayer substrate - Google Patents
Low temperature sintered porcelain composition for multilayer substrateInfo
- Publication number
- JPH0643270B2 JPH0643270B2 JP63057724A JP5772488A JPH0643270B2 JP H0643270 B2 JPH0643270 B2 JP H0643270B2 JP 63057724 A JP63057724 A JP 63057724A JP 5772488 A JP5772488 A JP 5772488A JP H0643270 B2 JPH0643270 B2 JP H0643270B2
- Authority
- JP
- Japan
- Prior art keywords
- low temperature
- weight
- multilayer substrate
- temperature sintered
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 title claims description 23
- 229910052573 porcelain Inorganic materials 0.000 title claims description 19
- 229910052878 cordierite Inorganic materials 0.000 claims description 16
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000010304 firing Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Si O 2 Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】 (a)産業上の利用分野 この発明は多層基板用低温焼結磁器組成物に関し、特
に、複数の磁器層が積層され、磁器間に回路が形成され
てなる多層磁器基板に適した多層基板用低温焼結磁器組
成物に関するものである。Description: (a) Field of Industrial Application This invention relates to a low temperature sintered porcelain composition for a multilayer substrate, and more particularly to a multilayer porcelain in which a plurality of porcelain layers are laminated and a circuit is formed between the porcelains. The present invention relates to a low temperature sintered porcelain composition for a multilayer substrate suitable for a substrate.
(b)従来の技術 一般に、電子機器の小型化にともない、電子回路を構成
する各種電子部品を実装する基板として磁器基板が用い
られ、最近では、実装密度をさらに高めるため、表面に
導電材料のペーストで回路パターンを形成した未焼成の
磁器シートを複数枚積層し、これを焼成して一体化した
多層磁器基板が開発されている。この種の多層磁器基板
として従来はアルミナが用いられていた。(b) Conventional Technology In general, with the miniaturization of electronic devices, a porcelain substrate is used as a substrate for mounting various electronic components that make up an electronic circuit.Recently, in order to further increase the packaging density, a conductive material A multilayer porcelain substrate has been developed in which a plurality of unfired porcelain sheets having a circuit pattern formed by a paste are laminated and fired to be integrated. Alumina has been conventionally used as this kind of multilayer ceramic substrate.
(c)発明が解決しようとする問題点 しかしながら、アルミナはその焼結温度が1500〜1
600℃と高温であるため、まず焼結のために多量のエ
ネルギーを必要とし、コスト高になる。また、基板内部
に形成される内部回路の導電材料としては、高温の焼成
温度に耐え得るWやMoなどの高融点金属に限定される
ため、回路パターンそのものの抵抗値が高くなるという
欠点がある。さらに、アルミナの熱膨張係数はアルミナ
基板の表面に搭載されるシリコンチップよりも大きいた
め、シリコンチップにサーマルストレスが加わり、シリ
コンチップにクラックを発生させる原因となる。加え
て、アルミナそのものの誘電率が比較的高いため、回路
内部を伝播する信号の遅延時間が増大するなどの問題が
あった。(c) Problems to be Solved by the Invention However, alumina has a sintering temperature of 1500 to 1
Since the temperature is as high as 600 ° C., a large amount of energy is required for sintering and the cost becomes high. Further, the conductive material of the internal circuit formed inside the substrate is limited to refractory metals such as W and Mo that can withstand a high firing temperature, so that the resistance value of the circuit pattern itself becomes high. . Furthermore, since the coefficient of thermal expansion of alumina is larger than that of the silicon chip mounted on the surface of the alumina substrate, thermal stress is applied to the silicon chip, which causes cracks in the silicon chip. In addition, since the dielectric constant of alumina itself is relatively high, there is a problem that the delay time of a signal propagating inside the circuit increases.
この発明は低温で焼結可能な多層基板用低温焼結磁器組
成物を提供することを目的とする。An object of the present invention is to provide a low temperature sintered porcelain composition for a multilayer substrate which can be sintered at a low temperature.
また、この発明は熱膨張係数が小さく、かつ誘電率が小
さく、さらに誘電損失が小さく比抵抗が高い多層基板用
低温焼結磁器組成物を提供することを目的とする。Another object of the present invention is to provide a low temperature sintered porcelain composition for a multilayer substrate, which has a small thermal expansion coefficient, a small dielectric constant, a small dielectric loss and a high specific resistance.
(d)問題点を解決するための手段 この発明の多層基板用低温焼結磁器組成物は次の材料よ
りなる。(d) Means for Solving Problems The low temperature sintered porcelain composition for a multilayer substrate of the present invention comprises the following materials.
すなわち、コージェライトが50〜95重量%、B2O
3が5〜20重量%、SiO2が1〜46重量%からな
る。That is, cordierite is 50 to 95% by weight, B 2 O
3 is 5 to 20% by weight, and SiO 2 is 1 to 46% by weight.
また、前記主成分に対して、添加物としてニッケルおよ
び/または銅の酸化物の1種以上がそれぞれNiOおよ
び/またはCuOに換算して15重量%以下添加含有さ
れたものからなる。In addition, one or more kinds of oxides of nickel and / or copper are added and added to the main component in an amount of 15% by weight or less in terms of NiO and / or CuO.
なお、ここでコージェライトとは、2MgO・2A2
O3・5SiO2の他、E.N.Levin et a1.による“Pha
se Diagrams for Ceramists",The American Ceramic So
ciety,Columbus,1964,P.246(Fig.72)に開示されている
組成範囲から構成されるものである。第1図にコージェ
ライトの組成領域を示しておく。同図において領域Aが
コージェライトの組成範囲である。但し、このコージェ
ライトには、その特性を損なわない範囲でMgO−A
2O3−SiO2系のコージェライト周辺の組成域にあ
る結晶構造(例えばムライト,フォルステライト,スピ
ネル,トリジマイトなどを主成分の20重量%まで含め
ることができる。The cordierite here is 2MgO.2A 2
In addition to O 3 .5SiO 2 , ENLevin et a1. By “Pha
se Diagrams for Ceramists ", The American Ceramic So
ciety, Columbus, 1964, P.246 (Fig. 72). FIG. 1 shows the composition region of cordierite. In the figure, region A is the composition range of cordierite. However, in this cordierite, MgO-A is used as long as the characteristics are not impaired.
A crystal structure (for example, mullite, forsterite, spinel, tridymite, etc.) in the composition region around the 2 O 3 —SiO 2 type cordierite can be contained up to 20% by weight of the main component.
また、上記主成分には、ニッケルおよび銅の酸化物を1
5重量%まで含むことができる。In addition, nickel and copper oxides are included in the above main component as 1
It can be included up to 5% by weight.
さらに、この発明に係る多層基板用低温焼結磁器組成物
を得るに当たっては、通常の窯業技術が適用される。す
なわち、コージェライトおよびB(ホウ素)の酸化物ま
たは化合物、さらにSiO2の各粉末を所定の割合で秤
量、調合し、その原料混合物を仮焼したのち粉砕し、こ
の粉末にバインダを加えてスラリーを作成し、さらにド
クターブレード法などのシート成形法によりセラミック
グリーンシートを作成し、セラミックグリーンシートの
積層体を焼結することにより多層磁器基板が得られる。
したがって、上記の工程によればガラス化の工程がない
ため、焼成時の脱バインダが容易であり、エネルギー消
費が少ない。Further, in obtaining the low temperature sintered porcelain composition for a multilayer substrate according to the present invention, ordinary ceramics technology is applied. That is, cordierite and B (boron) oxides or compounds, and SiO 2 powders are weighed and mixed at a predetermined ratio, the raw material mixture is calcined and then crushed, and a binder is added to this powder to form a slurry. Is produced, a ceramic green sheet is produced by a sheet forming method such as a doctor blade method, and a laminated body of the ceramic green sheets is sintered to obtain a multilayer porcelain substrate.
Therefore, according to the above process, since there is no vitrification process, binder removal during firing is easy and energy consumption is low.
さらには、上記の工程により作成されたセラミックグリ
ーンシートの上には、導電パターンを形成するための導
電材料を含むペーストパターンが印刷・塗布などの方法
により形成されるが、セラミックグリーンシートの焼成
に当たっては、これらの導電材料の手段に応じて焼成雰
囲気を設置すれば良い。導電材料としては、例えばC
u、Ag、Ag−Pd、Niなどがあるが、Ag、Ag
−Pdについては酸化性雰囲気、Cu、Niについては
窒素などの非酸化性雰囲気で焼成すれば良い。Furthermore, a paste pattern containing a conductive material for forming a conductive pattern is formed on the ceramic green sheet formed by the above process by a method such as printing or coating. The firing atmosphere may be set according to the means of these conductive materials. As the conductive material, for example, C
u, Ag, Ag-Pd, Ni, etc., but Ag, Ag
-Pd may be fired in an oxidizing atmosphere, and Cu and Ni may be fired in a non-oxidizing atmosphere such as nitrogen.
この発明の多層基板用低温焼結磁器組成物を用いて、基
板そのものを製造する場合、原料を秤量、混合し、この
原料混合物を800〜900℃で仮焼した後、粉砕し、
その粉末をバインダと混練してからフイルム上に成形
し、次いで得られたセラミックグリーンシートを酸化性
雰囲気あるいは非酸化性もしくは還元雰囲気中で焼成す
れば良い。When the substrate itself is manufactured using the low temperature sintered porcelain composition for a multilayer substrate of the present invention, raw materials are weighed and mixed, and the raw material mixture is calcined at 800 to 900 ° C. and then pulverized,
The powder may be kneaded with a binder, formed on a film, and then the obtained ceramic green sheet may be fired in an oxidizing atmosphere or a non-oxidizing or reducing atmosphere.
また、多層回路基板を製造する場合、セラミックグリー
ンシートの上にAg、Ag−Pd、Cn、Niなどの導
電材料からなる導電性ペーストで回路パターンを印刷
し、それらを複数枚積層してから、導電性ペーストに応
じた雰囲気で焼成すれば良い。導電材料としてCuやN
iなどの卑金属を使用する場合、それらの酸化を防止す
るため、非酸化性もしくは還元性の雰囲気で焼成するこ
とが好ましい。例えば、窒素をキャリアガスとして水蒸
気中を通過させ、酸素および水素を微量含有させた窒素
−水蒸気雰囲気(通常、N299.7〜99.8%)
中、950〜1020℃で焼成することが好ましい。な
お、酸素を微量含有させるのは、セラミックグリーンシ
ートの形成に使用するバインダを仮焼段階で完全に燃焼
させて、炭素として残存させずに除去するためである。When manufacturing a multilayer circuit board, a circuit pattern is printed on a ceramic green sheet with a conductive paste made of a conductive material such as Ag, Ag-Pd, Cn, or Ni, and a plurality of them are laminated, It suffices to fire in an atmosphere suitable for the conductive paste. Cu or N as conductive material
When using a base metal such as i, it is preferable to perform firing in a non-oxidizing or reducing atmosphere in order to prevent the oxidation thereof. For example, a nitrogen-steam atmosphere (usually N 2 99.7 to 99.8%) in which a small amount of oxygen and hydrogen is contained by passing through steam using nitrogen as a carrier gas.
It is preferable to bake at 950 to 1020 ° C. It should be noted that a small amount of oxygen is contained so that the binder used for forming the ceramic green sheet is completely burned in the calcination stage and is removed without remaining as carbon.
(e)実施例 先ず、コージェライトの原料を準備した。原料として
は、SiO2、MgOまたはMgCO3あるいはタルク
(3MgO・4SiO2・H2O)、A2O3を秤量
し、混合した。この混合物を1350〜1400℃で仮
焼した。このようにしてすでに第1図に示したコージェ
ライト組成物を得た。さらにこのコージェライト仮焼物
を粉砕して新たにコージェライト原料として準備した。(e) Example First, a raw material for cordierite was prepared. As raw materials, SiO 2 , MgO or MgCO 3 or talc (3MgO.4SiO 2 .H 2 O) and A 2 O 3 were weighed and mixed. This mixture was calcined at 1350-1400 ° C. Thus, the cordierite composition shown in FIG. 1 was already obtained. Further, this cordierite calcined product was crushed and newly prepared as a cordierite raw material.
次に、このコージェライト原料と、その他の構成材料、
すなわちB2O3またはBNあるいはB4C、Si
O2、NiO、CuOを準備し、第1表に示す組成の磁
器が得られるように秤量、混合した。この混合物を80
0〜900℃の温度で仮焼し、粉砕した。この粉砕した
粉末に有機バインダを加えて混練し、得られたスラリを
ドクターブレード法にて厚さ1mmのシート状に成形し
た。このセラミックグリーンシートを縦30mm、横10
mmの大きさにカットし、水蒸気中に通過させた窒素をキ
ャリアガスとする窒素−水蒸気の還元性もしくは非酸化
性雰囲気中900℃の温度でバインダー成分を燃焼さ
せ、これを第1表に示す各温度で1時間焼成して磁器を
得た。Next, this cordierite raw material and other constituent materials,
That is, B 2 O 3 or BN or B 4 C, Si
O 2 , NiO and CuO were prepared and weighed and mixed so that a porcelain having the composition shown in Table 1 was obtained. 80 this mixture
It was calcined at a temperature of 0 to 900 ° C. and pulverized. An organic binder was added to the pulverized powder and kneaded, and the obtained slurry was formed into a sheet having a thickness of 1 mm by a doctor blade method. This ceramic green sheet is 30 mm in length and 10 in width.
The binder component is burned at a temperature of 900 ° C. in a nitrogen-steam reducing or non-oxidizing atmosphere using nitrogen passed through water vapor as a carrier gas, which is cut into a size of mm, and is shown in Table 1. A porcelain was obtained by firing at each temperature for 1 hour.
また、このセラミックグリーンシートを縦3mm、横20
mmの各板状にカットし、これを3枚積層して2000Kg
/cm2で加圧し、角柱状にした。そして、これを上記の
方法で焼成し、熱膨張係数測定用の試料とした。In addition, this ceramic green sheet is 3 mm in length and 20 in width.
Cut into mm-shaped plates, stack 3 sheets, and 2000 kg
It was pressed at a pressure of / cm 2 to form a prism. Then, this was fired by the above method to obtain a sample for measuring the thermal expansion coefficient.
これらの試料について次の通り各特性をそれぞれの条件
や測定方法で測定し、第1表に示す結果を得た。The characteristics of these samples were measured under the respective conditions and measuring methods as follows, and the results shown in Table 1 were obtained.
誘電率:周波数1MHzで測定した値。Dielectric constant: A value measured at a frequency of 1 MHz.
誘電体損失:周波数1MHzで測定した値。Dielectric loss: A value measured at a frequency of 1 MHz.
比抵抗:試料に直流100Vを印加したときの値。Specific resistance: A value when 100 V DC is applied to the sample.
熱膨張係数:次式より算出した値。Thermal expansion coefficient: A value calculated from the following formula.
α=ΔL/L(T2−T1)+αSiO2 式中α:熱膨張係数 ΔL:加熱による試料の見掛けの伸び(mm) L:室温での試料の長さ(mm) T1:室温 T2:500℃ αSiO2:石英ガラスの熱膨張係数 である。α = ΔL / L (T 2 −T 1 ) + αSiO 2 where α: coefficient of thermal expansion ΔL: apparent elongation of sample due to heating (mm) L: length of sample at room temperature (mm) T 1 : room temperature T 2 : 500 ° C. αSiO 2 : the coefficient of thermal expansion of quartz glass.
第1表の結果は次の基準にしたがって判定した。The results in Table 1 were judged according to the following criteria.
焼結温度:1020℃以下(Cu,Ag,Ag−Pd,
Niなどの使用可能な温度) 誘電率(ε):1MHzの条件下で5以下 誘電損失(tanδ):1MHzの条件下で0.2%以下 比抵抗:直流電圧100Vの条件下で1012Ω・cm以
上 熱膨張係数:25〜500℃の平均値で4×10−6/
℃以下 なお、第1表において*印を付したものはこの発明の範
囲外であり、それ以外は全てこの発明の範囲内のもので
ある。Sintering temperature: 1020 ° C or less (Cu, Ag, Ag-Pd,
Dielectric constant (ε): 5 or less under the condition of 1MHz Dielectric loss (tan δ): 0.2% or less under the condition of 1MHz Specific resistance: 10 12 Ω under the condition of DC voltage 100V・ Cm or more Thermal expansion coefficient: 4 × 10 −6 / with an average value of 25 to 500 ° C.
C. or less In addition, those marked with * in Table 1 are outside the scope of the present invention, and all other items are within the scope of the present invention.
第1表から明らかなように、この発明の多層基板用低温
焼結磁器組成物における組成範囲を限定した理由は次の
通りである。As is clear from Table 1, the reason why the composition range of the low temperature sintered ceramic composition for a multilayer substrate of the present invention is limited is as follows.
(1)コージェライトが95重量%を越えると焼結温度が
1020℃より高くなるので好ましくない(試料番号
1)。一方、コージェライトが50重量%未満では熱膨
張係数が4×10−6/℃より大きくなり、またεが5
より大きくなるので好ましくない(試料番号3,1
0)。(1) When the cordierite content exceeds 95% by weight, the sintering temperature becomes higher than 1020 ° C, which is not preferable (Sample No. 1). On the other hand, if the cordierite content is less than 50% by weight, the coefficient of thermal expansion will be greater than 4 × 10 −6 / ° C., and ε will be 5
It is not preferable because it becomes larger (Sample No. 3, 1
0).
(2)B2O3が30重量%を越えると、tanδが0.
2%より大きくなり、また、焼成時に発泡しやすくなる
ので好ましくない(試料番号5,6)。一方、B2O3
が4重量%未満では焼成温度が1020℃より高くなり
好ましくない(試料番号1,8,10)。(2) When B 2 O 3 exceeds 30% by weight, tan δ is 0.
It becomes larger than 2% and foaming is likely to occur during firing, which is not preferable (Sample Nos. 5 and 6). On the other hand, B 2 O 3
Is less than 4% by weight, the firing temperature is higher than 1020 ° C., which is not preferable (Sample Nos. 1, 8, 10).
(3)SiO2が46重量%を越えると熱膨張係数が4×
10−6/℃より大きくなり、また、焼成時の基板の湾
曲も大きくなるので好ましくない(試料番号10)。一
方、SiO2が1重量%未満では焼成温度が1020℃
より高くなり、好ましくない(試料番号12)。(3) If the SiO 2 content exceeds 46% by weight, the coefficient of thermal expansion is 4 ×
It is not preferable because it is higher than 10 −6 / ° C. and the curvature of the substrate during firing also becomes large (Sample No. 10). On the other hand, if SiO 2 is less than 1% by weight, the firing temperature is 1020 ° C.
It becomes higher and is not preferable (Sample No. 12).
(4)CuO,NiOの一種以上からなる成分を添加する
ことによって焼結温度が低下し、メタライズ強度が向上
する(試料番号20,22,24)。(4) By adding a component composed of one or more of CuO and NiO, the sintering temperature is lowered and the metallization strength is improved (Sample Nos. 20, 22, 24).
しかし、15重量%以上添加すると、比抵抗が1012
Ω・cmより小さくなり好ましくない(試料番号19,2
1,23)。However, when added in an amount of 15% by weight or more, the specific resistance becomes 10 12
It is less than Ω · cm, which is not desirable (Sample Nos. 19 and 2)
1, 23).
(f)発明の効果 この発明に係る多層基板用低温焼結磁器組成物は次のよ
うな効果を有している。(f) Effects of the Invention The low temperature sintered porcelain composition for a multilayer substrate according to the present invention has the following effects.
(1)1020℃以下の温度で焼結可能であり、回路パタ
ーンを形成するための導電材料としてAg,Ag−Pd
などの比較的安価な貴金属が使用できる。また、非酸化
性の雰囲気で焼成できるため、回路パターンの導電材料
として安価なCu,Niなどの卑金属が使用できる。さ
らには、内部に抵抗パターンを形成する際サーメット材
料が使用できる。(1) Ag, Ag-Pd as a conductive material for forming a circuit pattern, which can be sintered at a temperature of 1020 ° C or less
A relatively inexpensive precious metal such as can be used. Further, since it can be fired in a non-oxidizing atmosphere, inexpensive base metals such as Cu and Ni can be used as the conductive material of the circuit pattern. Furthermore, a cermet material can be used when forming a resistance pattern inside.
(2)熱膨張係数が4×10−6/℃以下と小さく、シリ
コンの熱膨張係数と略等しくすれば、この基板の上にシ
リコンチップを搭載しても、サーマルストレスによって
シリコンチップにクラックが発生するおそれがない。(2) If the thermal expansion coefficient is as small as 4 × 10 −6 / ° C. or less and is approximately equal to the thermal expansion coefficient of silicon, even if a silicon chip is mounted on this substrate, the silicon chip will crack due to thermal stress. There is no danger of this occurring.
(3)比誘電率が5以下とアルミナの値よりも小さく、信
号遅延時間はアルミナの3/4以下に短縮できる。(3) The relative permittivity is 5 or less, which is smaller than that of alumina, and the signal delay time can be shortened to 3/4 or less of that of alumina.
第1図はコージェライトの組成範囲を示す図である。 FIG. 1 is a diagram showing the composition range of cordierite.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 米田 康信 京都府長岡京市天神2丁目26番10号 株式 会社村田製作所内 (72)発明者 坂部 行雄 京都府長岡京市天神2丁目26番10号 株式 会社村田製作所内 (72)発明者 万代 治文 京都府長岡京市天神2丁目26番10号 株式 会社村田製作所内 (56)参考文献 特開 昭58−95643(JP,A) 特開 昭63−151645(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasunobu Yoneda 2-26-10 Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd. (72) Inventor Yukio Sakabe 2-26-10 Tenjin, Nagaokakyo, Kyoto Stock Company Murata Manufacturing Co., Ltd. (72) Inventor Harufumi Bandai, 2-10-10 Tenjin, Nagaokakyo City, Kyoto Prefecture Murata Manufacturing Co., Ltd. (56) References JP 58-95643 (JP, A) JP 63-151645 (JP) , A)
Claims (2)
O3が5〜20重量%、SiO2が1〜46重量%から
なる多層基板用低温焼結磁器組成物。1. 50 to 95% by weight of cordierite, B 2
A low temperature sintered porcelain composition for a multi-layer substrate, comprising O 3 in an amount of 5 to 20% by weight and SiO 2 in an amount of 1 to 46% by weight.
ルおよび/または銅の酸化物の1種以上がそれぞれNi
Oおよび/またはCuOに換算して15重量%以下添加
含有されている請求項(1)記載の多層基板用低温焼結磁
器組成物。2. One or more nickel and / or copper oxides as additives are Ni based on the main component.
The low temperature sintered porcelain composition for a multilayer substrate according to claim (1), which contains 15% by weight or less of O and / or CuO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63057724A JPH0643270B2 (en) | 1988-03-10 | 1988-03-10 | Low temperature sintered porcelain composition for multilayer substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63057724A JPH0643270B2 (en) | 1988-03-10 | 1988-03-10 | Low temperature sintered porcelain composition for multilayer substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01230463A JPH01230463A (en) | 1989-09-13 |
| JPH0643270B2 true JPH0643270B2 (en) | 1994-06-08 |
Family
ID=13063885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63057724A Expired - Fee Related JPH0643270B2 (en) | 1988-03-10 | 1988-03-10 | Low temperature sintered porcelain composition for multilayer substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0643270B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895643A (en) * | 1981-12-02 | 1983-06-07 | 株式会社日立製作所 | Sintered body having coefficient of thermal expansion approximating to silicon |
| JPS63151645A (en) * | 1986-12-16 | 1988-06-24 | Fujitsu Ltd | Porcelain composition for circuit boards |
-
1988
- 1988-03-10 JP JP63057724A patent/JPH0643270B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01230463A (en) | 1989-09-13 |
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