JPH0645520B2 - Method for growing SiC single crystal - Google Patents
Method for growing SiC single crystalInfo
- Publication number
- JPH0645520B2 JPH0645520B2 JP22777286A JP22777286A JPH0645520B2 JP H0645520 B2 JPH0645520 B2 JP H0645520B2 JP 22777286 A JP22777286 A JP 22777286A JP 22777286 A JP22777286 A JP 22777286A JP H0645520 B2 JPH0645520 B2 JP H0645520B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- single crystal
- raw material
- sic single
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 9
- 239000002994 raw material Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 29
- 229910010271 silicon carbide Inorganic materials 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明はＳｉＣ（シリコン・カーバイド）単結晶の成長
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for growing a SiC (silicon carbide) single crystal.
（ロ） 従来の技術 ＳｉＣは物理的、化学的に安定であり、しかも高温、放
射線に耐える素材であるため、耐環境性半導体材料とし
ての応用が期待されている。また６Ｈ型のＳｉＣ単結晶
は、室温で約３．０ｅＶの禁制帯幅をもち、青色発光ダ
イオード用素材として用いられている。(B) Conventional Technology Since SiC is a material that is physically and chemically stable and can withstand high temperature and radiation, it is expected to be applied as an environment resistant semiconductor material. The 6H-type SiC single crystal has a band gap of about 3.0 eV at room temperature and is used as a material for blue light emitting diodes.
このようなＳｉＣ単結晶のインゴットを成長させる場合
には、主に昇華法が採用されている。この昇華法によっ
てｐ型のＳｉＣ単結晶を成長させる方法としては、従来
Ａｌ（アルミニウム）粉末をＳｉＣ結晶と混合し、これ
を原材料として１〜１０Torrの低圧下で加熱昇華させる
ことによりＳｉＣ単結晶からなる種結晶上にＳｉＣ単結
晶が成長する過程で、気化したＡｌをドープする方法が
ある（「物性」１９７０年５月号Ｐ．２６３〜Ｐ．２６
９）。When growing such a SiC single crystal ingot, a sublimation method is mainly adopted. As a method for growing a p-type SiC single crystal by this sublimation method, a conventional Al (aluminum) powder is mixed with a SiC crystal, and this is used as a raw material to heat and sublimate the SiC single crystal under a low pressure of 1 to 10 Torr. There is a method of doping vaporized Al in the process of growing a SiC single crystal on a seed crystal (see “Physical Properties” May 1970, P.263-P.26).
9).
（ハ） 発明が解決しようとする問題点 然るに上記方法では上記成長温度は２０００〜２５００
℃とＡｌの沸点（１５００〜１６００℃）に較べて非常
に高いため、上記成長温度まで昇温する間にＡｌのみが
気化してしまう。このため、ＳｉＣ単結晶の成長初期で
はＡｌのキャリア濃度が非常に高く成長が進むにつれて
Ａｌのキャリア濃度が低くなり、遂にはＡｌを含有しな
いｎ型のＳｉＣ単結晶が成長する結果となっていた。(C) Problems to be Solved by the Invention However, in the above method, the growth temperature is 2000 to 2500.
C. and the boiling point of Al (1,500 to 1,600 ° C.) are extremely high, so only Al vaporizes while the temperature is raised to the growth temperature. For this reason, the carrier concentration of Al was very high at the early stage of growth of the SiC single crystal, and the carrier concentration of Al decreased as the growth progressed, and finally the n-type SiC single crystal containing no Al was grown. .
また、成長温度達成前に気化したＡｌが種結晶表面に付
着するため、その表面に成長するＳｉＣ単結晶の結晶性
を悪化させるという問題点があった。Further, since vaporized Al adheres to the seed crystal surface before the growth temperature is reached, there is a problem that the crystallinity of the SiC single crystal growing on the surface is deteriorated.
（ニ） 問題点を解決するための手段 本発明は斯る点に鑑みてなされたものでその構成的特徴
はＳｉＣ原材料を昇華させてＳｉＣ種結晶上にＳｉＣ単
結晶を成長させる方法であって、上記原材料としてＳｉ
Ｃと不純物との混合物を１８００℃以上で熱処理したも
のを用いることにある。(D) Means for Solving the Problems The present invention has been made in view of the above problems, and its constitutional feature is a method of growing a SiC single crystal on a SiC seed crystal by sublimating a SiC raw material. , Si as the raw material
This is to use a mixture of C and impurities that has been heat-treated at 1800 ° C. or higher.
（ホ） 作 用 ＳｉＣとＡｌとの混合物を１８００℃以上で熱処理を行
なうとＳｉＣと不純物とは結晶的に結合する。従って、
高温下でも不純物が単独で気化することはない。(E) Working If the mixture of SiC and Al is heat-treated at 1800 ° C. or higher, SiC and impurities are crystallized. Therefore,
Impurities do not vaporize alone even at high temperatures.
（ヘ） 実施例 図は本発明に用いる原材料を製造するための装置であっ
て、グラファイト製るつぼ(1)と該るつぼを閉塞するグ
ラファイト製の蓋体(2)とからなる。(F) Example An apparatus is an apparatus for producing a raw material used in the present invention, which comprises a graphite crucible (1) and a graphite lid (2) for closing the crucible.
斯る装置を用いて、例えば不純物としてＡｌを含むｐ型
ＳｉＣ原材料を製造する一例としては、まずるつぼ(1)
中に粒径約８０μｍのＳｉＣ粉末４０ｇと０．５ａｔ％
とＡｌとを収納し、Ａｒガス圧７ｍｂａｒ中で２２００
℃、約４時間熱処理を行なう。このようにして得られた
ｐ型ＳｉＣ原材料(3)はＡｌ濃度が約３８０ppmと偏在が
なく、かつＳｉＣとＡｌとが結晶的に結合したものとな
っていた。As an example of producing a p-type SiC raw material containing Al as an impurity using such an apparatus, first, a crucible (1)
40g of SiC powder with a particle size of about 80μm and 0.5at%
2200 in Ar gas pressure 7 mbar
Heat treatment at ℃ for about 4 hours. The p-type SiC raw material (3) thus obtained had an Al concentration of about 380 ppm and was not unevenly distributed, and SiC and Al were crystallinely bonded.
次いで斯るｐ型ＳｉＣ原材料を用い、種結晶温度２２０
０Ｃ〜２４００℃、原材料温度２３００〜２５００℃、
種結晶として原材料との間の温度勾配５〜２０℃／cm、
反応系内のガス圧１〜１０Torrという条件下で原材料を
昇華させ、種結晶表面にｐ型ＳｉＣ単結晶を成長させ
た。Then, using such p-type SiC raw material, a seed crystal temperature of 220
0C to 2400 ° C, raw material temperature 2300 to 2500 ° C,
5 to 20 ° C./cm temperature gradient between raw materials as seed crystals,
The raw material was sublimated under the conditions of a gas pressure of 1 to 10 Torr in the reaction system to grow a p-type SiC single crystal on the seed crystal surface.
このようにして得られた単結晶はその成長層厚が大とな
ってもｎ型に反転することなく、キャリア濃度２×１０
17／cm3、比抵抗２．３４Ω・cm、キャリア移動度２
４．４cm3／Ｖ・Ｓの均一な特性を示した。The single crystal thus obtained does not invert to the n-type even if the growth layer has a large thickness, and has a carrier concentration of 2 × 10
17 / cm 3 , specific resistance 2.34 Ω · cm, carrier mobility 2
It exhibited a uniform property of 4.4 cm 3 / V · S.
尚、本実施例ではｐ型ＳｉＣ製造時の熱処理温度を２２
００℃としたが、斯る温度はＳｉＣの分解しはじめる温
度である１８００℃以上とすれば良い。In this embodiment, the heat treatment temperature at the time of manufacturing p-type SiC is set to 22.
Although the temperature is set to 00 ° C., the temperature may be set to 1800 ° C. or higher at which SiC starts to decompose.
また、本実施例で得られた単結晶のキャリア濃度は原材
料の不純物濃度に略比例し、また原材料の不純物濃度は
ｐ型ＳｉＣ原材料製造時の反応系内のガス圧に略比例す
る。従って単結晶のキャリア濃度は原材料製造時のガス
圧により調整できる。Further, the carrier concentration of the single crystal obtained in this example is approximately proportional to the impurity concentration of the raw material, and the impurity concentration of the raw material is approximately proportional to the gas pressure in the reaction system during the production of the p-type SiC raw material. Therefore, the carrier concentration of the single crystal can be adjusted by the gas pressure at the time of manufacturing the raw material.
更に、本実施例ではｐ型不純物としてＡｌを用いたが、
他のＢ（ホウ素）、Ｇａ（ガリウム）等を用いても同様
な結果が得られる。Further, although Al is used as the p-type impurity in this embodiment,
Similar results can be obtained by using other B (boron), Ga (gallium) or the like.
（ト） 発明の効果 本発明によれば、特性が均一なＳｉＣ単結晶を得ること
ができる。(G) Effect of the Invention According to the present invention, a SiC single crystal having uniform properties can be obtained.
図は本発明のＳｉＣ原材料製造に用いる装置を示す断面
図である。 (3)……（Ｐ型）ＳｉＣ原材料The drawing is a cross-sectional view showing an apparatus used for producing the SiC raw material of the present invention. (3) …… (P type) SiC raw material
Claims (1)
にＳｉＣ単結晶を成長させる方法であって、上記原材料
としてＳｉＣと不純物との混合物を１８０℃以上で熱処
理したものを用いることを特徴とするＳｉＣ単結晶の成
長方法。1. A method for sublimating a SiC raw material to grow a SiC single crystal on a SiC seed crystal, wherein a mixture of SiC and impurities is heat-treated at 180 ° C. or higher as the raw material. Method for growing SiC single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22777286A JPH0645520B2 (en) | 1986-09-25 | 1986-09-25 | Method for growing SiC single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22777286A JPH0645520B2 (en) | 1986-09-25 | 1986-09-25 | Method for growing SiC single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6385097A JPS6385097A (en) | 1988-04-15 |
| JPH0645520B2 true JPH0645520B2 (en) | 1994-06-15 |
Family
ID=16866139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22777286A Expired - Lifetime JPH0645520B2 (en) | 1986-09-25 | 1986-09-25 | Method for growing SiC single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645520B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5994248B2 (en) * | 2011-12-26 | 2016-09-21 | 住友電気工業株式会社 | Ingot, substrate and group of substrates |
-
1986
- 1986-09-25 JP JP22777286A patent/JPH0645520B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6385097A (en) | 1988-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |