JPH0649391B2 - Optical recording medium for DRAW - Google Patents
Optical recording medium for DRAWInfo
- Publication number
- JPH0649391B2 JPH0649391B2 JP61255370A JP25537086A JPH0649391B2 JP H0649391 B2 JPH0649391 B2 JP H0649391B2 JP 61255370 A JP61255370 A JP 61255370A JP 25537086 A JP25537086 A JP 25537086A JP H0649391 B2 JPH0649391 B2 JP H0649391B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- recording
- substrate
- recording thin
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 21
- 239000010409 thin film Substances 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 27
- 239000010936 titanium Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011669 selenium Substances 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000002926 oxygen Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明はレーザービーム等のエネルギー線の照射によっ
て情報を記録あるいは記憶するのに用いられる光記録媒
体の改良に関するものであり、特に、光ディスク、光カ
ード、光テープ等の光学式高密度情報記録媒体に用いら
れる穴明け型の記録薄膜の組成の改良に関するものであ
る。TECHNICAL FIELD The present invention relates to an improvement of an optical recording medium used for recording or storing information by irradiating an energy ray such as a laser beam, and particularly to an optical disc, The present invention relates to an improvement in the composition of a perforated recording thin film used for an optical high density information recording medium such as an optical card and an optical tape.
(発明の背景) 光ディスク等に用いられる追記(DRAW)型の記録薄膜の
組成としてはAu、Ge等の金属、te−C,Te−S
e等のTe系組成物、シアニン等の有機物、金属酸化
物、その他が提案されている。光記録薄膜の現在の問題
点は CNR等の記録・再生特性を低下させずに、その耐久
性をいかに向上させるかという点にある。Te系組成物
よりなる記録薄膜は既に一部実用化されているが、記録
・再生特性と耐久性の両方を完全に満足させるものは少
なく、一層の改良が要求されている。(Background of the Invention) As a composition of a write-once (DRAW) type recording thin film used for an optical disc or the like, a metal such as Au or Ge, te-C or Te-S is used.
Te-based compositions such as e, organic substances such as cyanine, metal oxides, and the like have been proposed. The current problem with optical recording thin films is how to improve their durability without deteriorating recording / reproducing characteristics such as CNR. Although a recording thin film made of a Te-based composition has already been partially put into practical use, few of them completely satisfy both recording / reproducing characteristics and durability, and further improvement is required.
(従来技術) Te系の記録薄膜の中で、テルル(Te)とセレン(Se)
をベースとするTe−Se系の薄膜はピット形状が良
く、従って CNRが高く、かつ耐久性も良好である。この
記録薄膜の特性を改善するためにTe,Se以外の元
素、例えば、Cd,Zn,Al,Ga,In,Sb,B
i,Si,Sn,Pb,Ta,Cu,Ag,I,Tlを
添加することは既に提案されている(特公昭59−35
356号参照)。また、第3成分以上の添加元素として
チタン(Ti)と銀(Ag)を添加することにより耐久性を
向上させることができるという提案は特開昭60−18
4885号に記載されている。このチタンと銀の添加に
よって記録膜の耐久性は向上するが、逆に、チタンの添
加によってピット形状が悪くなって、 CNRが低下すると
いう問題が生じる。従って、 CNRを低下させずに耐久性
を向上させる記録膜組成の開発が要望されていた。本発
明はこれらの研究の延長上にある。(Prior Art) Among Te-based recording thin films, tellurium (Te) and selenium (Se) are used.
The Te-Se based thin film based on Al has a good pit shape and therefore has a high CNR and good durability. In order to improve the characteristics of this recording thin film, elements other than Te and Se, such as Cd, Zn, Al, Ga, In, Sb and B, are used.
It has already been proposed to add i, Si, Sn, Pb, Ta, Cu, Ag, I and Tl (Japanese Patent Publication No. 59-35).
356). Further, there is a proposal that the durability can be improved by adding titanium (Ti) and silver (Ag) as additional elements of the third component or more.
4885. The addition of titanium and silver improves the durability of the recording film, but on the contrary, the addition of titanium deteriorates the pit shape, resulting in a problem that the CNR is lowered. Therefore, there has been a demand for the development of a recording film composition that improves durability without lowering CNR. The present invention is an extension of these studies.
(発明の目的) 本発明の目的は上記欠点の無い DRAW型記録膜組成を提
供することにある。すなわち、耐久性の向上と記録・再
生特性の向上とをともに満足させることができるTe−
Se系の穴明け記録用薄膜組成を提供することにある。(Object of the Invention) An object of the present invention is to provide a DRAW type recording film composition which does not have the above-mentioned drawbacks. That is, it is possible to satisfy both the improvement of the durability and the improvement of the recording / reproducing characteristics.
An object is to provide a Se-based perforated recording thin film composition.
(発明の構成) 本発明の提供する基板上に形成されたテルルを主成分と
し且つセレンをさらに含む記録薄膜を有するレーザービ
ームにより情報が記録される光記録媒体は、上記記録薄
膜中の上記セレン含有量が1〜10原子%であり且つ上
記記録薄膜がさらにチタン(Ti)を0.5〜6原子%含
有することを特徴としている。(Structure of the Invention) An optical recording medium on which information is recorded by a laser beam having a recording thin film containing tellurium as a main component and further containing selenium formed on a substrate provided by the present invention is the selenium in the recording thin film. The content is 1 to 10 atom%, and the recording thin film further contains titanium (Ti) in an amount of 0.5 to 6 atom%.
上記記録薄膜はさらに銀(Ag)を3原子%以下の含有量
で含むこともできる。The recording thin film may further contain silver (Ag) in a content of 3 atomic% or less.
上記記録薄膜はガラス、プラスチックス、セラミック、
金属、その他任意の支持体上に形成することができる。
光ディスクの場合にはコスト、生産性の観点からアクリ
ル、ポリカーボネート等の透明樹脂基盤が好ましく、膜
厚は一般に200〜500Åである。The recording thin film is made of glass, plastics, ceramics,
It can be formed on a metal or any other support.
In the case of an optical disc, a transparent resin substrate such as acrylic or polycarbonate is preferable from the viewpoint of cost and productivity, and the film thickness is generally 200 to 500Å.
上記組成の中でセレン(Se)の比率はテルル(Te)に対
して1〜10原子%、好ましくは、3〜8原子%にする
必要がある。セレンの比率が1原子%未満では記録膜の
耐久性が低下し、逆に10原子%を超えると記録特性、例
えば記録感度や再生特性が低下する。このセレンの含有
量は使用する基板の種類によって異り、アクリル樹脂製
基板の場合には反射率低下すなわち耐久性低下を防ぐた
めに5原子%以上であることが必要だが、ポリカーボネ
ート製樹脂製基板の場合には1原子%以上であればよ
い。In the above composition, the ratio of selenium (Se) needs to be 1 to 10 atom%, preferably 3 to 8 atom% with respect to tellurium (Te). When the ratio of selenium is less than 1 atom%, the durability of the recording film is lowered, and conversely, when it exceeds 10 atom%, the recording characteristics such as recording sensitivity and reproducing characteristics are deteriorated. The content of this selenium differs depending on the type of substrate used, and in the case of an acrylic resin substrate, it is necessary to be 5 atom% or more to prevent a decrease in reflectance, that is, a decrease in durability. In this case, it may be 1 atomic% or more.
本発明の特性は上記テルル−セレン系記録薄膜組成にさ
らにチタン(Ti)を0.5〜6原子%添加することを特
徴としている。上記チタの含有量が0.5原子%未満で
は耐久性が悪くなり、逆に6原子%を超えるとピット形
状が悪くなって再生特性、すなわち CNRが低下する。The characteristic of the present invention is that titanium (Ti) is further added to the above tellurium-selenium recording thin film composition in an amount of 0.5 to 6 atomic%. If the titanium content is less than 0.5 atom%, the durability will be poor, while if it exceeds 6 atom%, the pit shape will be poor and the reproduction characteristics, that is, CNR will be deteriorated.
本発明の記録膜組成には反射率を増加させるために銀
(Ag)を添加することができる。この銀の添加量は3原
子%以下、好ましくは2原子%でよく、場合によっては
添加しなくてもよい。The recording film composition of the present invention contains silver to increase the reflectance.
(Ag) can be added. The amount of silver added may be 3 atomic% or less, preferably 2 atomic%, and may not be added in some cases.
本発明の他の観点により提供される光記録媒体は、基板
上に形成されたテルルを主成分とし且つセレンを含む記
録薄膜を有するレーザービームにより情報が穴明け記録
される光記録媒体において、上記セレンの含有量が1〜
10原子%であり且つ上記記録薄膜がさらにチタンを
0.5〜6原子%含有し、且つ上記記録薄膜の膜厚方向
に於る酸素濃度が記録薄膜の外側表面近傍および記録薄
膜と基板との界面近傍よりもこれら外側表面近傍と界面
近傍との間の中間帯域の方が低くなっていることを特徴
としている。An optical recording medium provided according to another aspect of the present invention is an optical recording medium in which information is punched and recorded by a laser beam having a recording thin film containing tellurium as a main component and formed on a substrate. Selenium content of 1
10 atomic%, the recording thin film further contains 0.5 to 6 atomic% of titanium, and the oxygen concentration in the thickness direction of the recording thin film is near the outer surface of the recording thin film and between the recording thin film and the substrate. It is characterized in that the intermediate band between the vicinity of the outer surface and the vicinity of the interface is lower than the vicinity of the interface.
一般に、上記のようなTe−Se系の記録薄膜はスパッ
タ法、真空蒸着法等の物理蒸着(PVD) 法で基板上に形成
される。この物理蒸着法ではチャンバーを排気して10
-3 Torr 以下の真空度にするが、基板、その他から出て
くる水分、酸素分子、モノマーに起因する酸素が存在す
るため、記録薄膜中に酸素が含まれる。特に、基板とし
てプラスチックを使用した場合にはこの酸素を完全に除
去するのは難しい。Generally, the Te—Se based recording thin film as described above is formed on a substrate by a physical vapor deposition (PVD) method such as a sputtering method or a vacuum evaporation method. In this physical vapor deposition method, the chamber is evacuated to 10
Although the degree of vacuum is set to -3 Torr or less, oxygen is contained in the recording thin film due to the presence of oxygen originating from water, oxygen molecules, and monomers coming out from the substrate and others. In particular, when plastic is used as the substrate, it is difficult to completely remove this oxygen.
この酸素はスパッタ法あるいは蒸着法で生成するTe,
Se,Tiの原子、クラスターあるいは粒子と一緒に基
板上に付着あるいは堆積される。この際、酸素はこれら
元素と反応して酸化物となって堆積されるものと考えら
れる。これら酸化物は記録膜の耐久性を向上させるが、
逆にピット形状に乱れを生じさせて再生特性すなわち C
NRを低下させる。This oxygen is Te generated by the sputtering method or the vapor deposition method,
It is attached or deposited on the substrate together with Se, Ti atoms, clusters or particles. At this time, it is considered that oxygen reacts with these elements to be deposited as an oxide. These oxides improve the durability of the recording film,
On the contrary, the pit shape is disturbed and the reproduction characteristic, that is, C
Reduce NR.
本発明者達はこの欠点を無くすべく研究を続けた結果、
記録薄膜の膜厚方向での酸素含有量分布を上記のように
制御することによって、耐久性と記録・再生特性の両方
を満足させることができることを発見し、本発明を完成
した。As a result of continued research by the present inventors to eliminate this drawback,
By controlling the oxygen content distribution in the film thickness direction of the recording thin film as described above, it was discovered that both durability and recording / reproducing characteristics can be satisfied, and the present invention was completed.
すなわち、前記のように記録薄膜の外側表面近傍および
界面近傍の酸素含有量を膜厚方向における上記外側表面
近傍と界面近傍との間の中間帯域よりも高くする。上記
酸素は記録薄膜の構成元素であるTe,SeおよびTi
のいずれかと反応してこれらの酸化物となることが考え
られるが、分析の結果、この酸素はTiと反応してチタ
ン酸化物となっている。このチタン酸化物は記録膜の耐
久性を向上させる役目をしていると考えられる。一方、
上記中間帯域ではチタンは酸化物ではないメタルとして
存在し、記録膜中に均一に分布し、アモルファスな記録
膜構造になっている。ピット形状が良好になる理由はこ
の中間帯域でメタル状チタンが均一分布にしているため
と考えられる。That is, as described above, the oxygen content in the vicinity of the outer surface and the vicinity of the interface of the recording thin film is made higher than the intermediate band between the vicinity of the outer surface and the vicinity of the interface in the film thickness direction. The oxygen is Te, Se and Ti which are the constituent elements of the recording thin film.
It is considered that these oxides react with any of these to form these oxides, but as a result of analysis, this oxygen reacts with Ti to form titanium oxides. It is considered that this titanium oxide plays a role of improving the durability of the recording film. on the other hand,
In the intermediate band, titanium exists as a metal that is not an oxide, is uniformly distributed in the recording film, and has an amorphous recording film structure. It is considered that the reason why the pit shape becomes good is that the metallic titanium has a uniform distribution in this intermediate band.
上記のようなチタン酸化物層−チタンメタル層−チタン
酸化物層(基板側)の3層構造は原理的には同一ターゲッ
トを用いて、各層のスパッタリング時に酸素濃度を変え
て基板上に形成することができる。しかし、実際には、
スパッタリング操作の前に基板を十分に真空脱気乾燥す
るだけで上記3層構造が形成される。この理由は次のよ
うに考えられる。すなわち、基板を十分に脱気乾燥する
ことにより、基板に吸着している酸素、水分、モノマー
等がほぼ完全に除去され、スパッタ時には、それでも残
っていたこれら成分からの酸素がチタンと反応してチタ
ン酸化物の層を形成する。しかし酸素は直ちに消費され
あるいは補促されて、中間帯域以上では酸素フリーなメ
タル状チタとなる。一方、外側表面近傍はスパッタリン
グ後に光ディスクをスパッタ装置から取出した時に空気
中の酸素によって酸化されたものと考えられる。The above three-layer structure of titanium oxide layer-titanium metal layer-titanium oxide layer (substrate side) is formed on the substrate by using the same target in principle and changing the oxygen concentration during sputtering of each layer. be able to. But in reality,
The above three-layer structure is formed only by sufficiently vacuum degassing and drying the substrate before the sputtering operation. The reason for this is considered as follows. That is, by sufficiently degassing and drying the substrate, oxygen, water, monomers, etc. adsorbed on the substrate are almost completely removed, and during sputtering, oxygen remaining from these components still reacts with titanium. Form a layer of titanium oxide. However, oxygen is immediately consumed or promoted to become an oxygen-free metal-like titanium above the intermediate band. On the other hand, it is considered that the vicinity of the outer surface was oxidized by oxygen in the air when the optical disk was taken out from the sputtering apparatus after sputtering.
上記外側表面近傍と界面近傍での酸化物により形成され
る各層の厚さは記録膜全体の膜厚によって異るが、膜厚
が300Åの場合、上記の各々の酸化物膜の厚さは約1
00Åか、それ以下である。The thickness of each layer formed by the oxide near the outer surface and near the interface varies depending on the film thickness of the entire recording film, but when the film thickness is 300Å, the thickness of each oxide film is about 1
It is 00Å or less.
以下、実施例を用いて本発明を説明する。Hereinafter, the present invention will be described using examples.
(実施例1) 大型真空脱気乾燥機中に90時間放置して十分脱気した
プリグルーブ付きのアクリル樹脂(PMMA) とポリカーボ
ネート樹脂(PC)製の光ディスク基板(直径130mm,
厚さ1.2mm)をスパッタリング装置(徳田製作所製)
にセットし、下記条件でスパッタリングを行った: アルゴン圧=3×10-3 Torr スパッタ出力=300W 膜 厚 =300Å ターゲットはTe−Se合金(組成比Te:Se=75
〜90:25〜10)上にTiあるいはTi−Ag合金
(Ti:Ag=3〜9:1〜5)のチップをのせたオン
チップターゲットにした。ターゲット組成と膜組成は互
いに異るため膜の組成を分析によって求めた。Example 1 An optical disk substrate (diameter 130 mm, diameter 130 mm, made of acrylic resin (PMMA) and polycarbonate resin (PC) with a pre-groove that was sufficiently deaerated by leaving it in a large vacuum deaeration dryer for 90 hours.
1.2mm thick) sputtering equipment (Tokuda Manufacturing)
And sputtering was performed under the following conditions: Argon pressure = 3 × 10 −3 Torr Sputtering power = 300 W Film thickness = 300 Å Target was Te-Se alloy (composition ratio Te: Se = 75)
~ 90: 25 ~ 10) on which a chip of Ti or Ti-Ag alloy (Ti: Ag = 3 ~ 9: 1 ~ 5) was placed. Since the target composition and the film composition are different from each other, the film composition was obtained by analysis.
得られた DRAW 型光ディスクに830nmの半導体レーザ
ーを用いて出力6 mW で1MHzの反復信号を書込み、
出力1 mW で読出して CNRを測定した(帯域=30kH
z)。さらに、ピット形状は電子顕微鏡で観察し、記録
膜の深さ方向の元素分布状態と原子価状態はオージェ電
子分析と XPS分析で調べた。Using the semiconductor laser of 830 nm, write the repetitive signal of 1 MHz with the output of 6 mW on the obtained DRAW type optical disc,
The output was read at 1 mW and the CNR was measured (band = 30 kHz
z). Furthermore, the pit shape was observed by an electron microscope, and the element distribution state and valence state in the depth direction of the recording film were examined by Auger electron analysis and XPS analysis.
表Iからわかるように、ピット形状、従って記録・再生
特性と CNR変化率、従って耐久性の両方を満足させる膜
組成は前記定義の範囲内に入っている必要がある。 As can be seen from Table I, the film composition satisfying both the pit shape, that is, the recording / reproducing characteristics and the CNR change rate, and therefore the durability must be within the range defined above.
(比較例) 比較例1の試料番号7と同じ操作を繰り返したが、基板
の真空脱気乾燥は行わなかった。Comparative Example The same operation as in Sample No. 7 of Comparative Example 1 was repeated, but the substrate was not vacuum degassed and dried.
得られた光ディスク(試料番号20)のピット形状と試
料番号7の光ディスクのピット形状の顕微鏡写真の模写
図を第2図に示す。A micrograph of the pit shape of the obtained optical disk (Sample No. 20) and the pit shape of the optical disk of Sample No. 7 is shown in FIG.
第2図から明らかなように基板の予備真空乾燥によって
ピット形状は大巾に良くなる。なお、これらの膜の初期
CNR0 は比較例(試料番号20)で50dB、試料番号7
で56dBであった。As is clear from FIG. 2, the pit shape is greatly improved by preliminary vacuum drying of the substrate. Note that the initial stage of these membranes
CNR 0 is 50 dB and sample number 7 in the comparative example (sample number 20)
Was 56 dB.
これら2つの記録膜の膜厚方向の元素分布状態と原子価
状態を XPS分析とオージェ電子分析で調べた結果を第3
図(試料番号7)と第4図(比較例(試料番号20))に示
した。これらのデータはチタンが外側表面近傍と界面近
傍では酸化物となっており、これらの中間帯域ではメタ
ル状態になっていることを示している。The results of XPS analysis and Auger electron analysis of the element distribution state and valence state in the film thickness direction of these two recording films
It is shown in the figure (Sample No. 7) and FIG. 4 (Comparative Example (Sample No. 20)). These data indicate that titanium is an oxide near the outer surface and near the interface and is in the metal state in these intermediate zones.
第1図は本発明の範囲外の記録膜のピット形状を示す顕
微鏡写真の模写図。 第2図は本発明と比較例(試料番号20)の記録膜の第1
図と同様な図。 第3,4図はそれぞれ本発明と比較例(試料番号20)の
記録膜の XPS分析およびオージェ電子分析形状を示す
図。FIG. 1 is a copy of a micrograph showing a pit shape of a recording film outside the scope of the present invention. FIG. 2 shows the first recording film of the present invention and the comparative example (sample No. 20).
The same figure as the figure. FIGS. 3 and 4 show XPS analysis and Auger electron analysis profiles of the recording film of the present invention and the comparative example (Sample No. 20).
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−184885(JP,A) 特開 昭61−98597(JP,A) 特開 昭61−204841(JP,A) ─────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-60-184885 (JP, A) JP-A-61-98597 (JP, A) JP-A-61-204841 (JP, A)
Claims (2)
にSeとTiとを含む記録薄膜を有するレーザービームによ
って情報が穴明け記録される追記型の光記録媒体におい
て、 記録薄膜中のSe含有量が1〜10原子%であり、Ti含有量
が0.5〜6原子%であり、記録薄膜の膜厚方向におけ
る酸素濃度がこの記録薄膜の外側表面近傍およびこの記
録薄膜と基板との界面近傍よりも上記外側表面近傍と上
記界面近傍との間の中間体域の方が低くなっていること
を特徴とする光記録媒体。1. A write-once type optical recording medium in which information is punched and recorded by a laser beam having a recording thin film containing Te as a main component formed on a substrate and further containing Se and Ti. The Se content is 1 to 10 atomic%, the Ti content is 0.5 to 6 atomic%, and the oxygen concentration in the film thickness direction of the recording thin film is near the outer surface of the recording thin film and the recording thin film and the substrate. The optical recording medium is characterized in that the intermediate region between the vicinity of the outer surface and the vicinity of the interface is lower than the vicinity of the interface.
膜と基板との界面近傍ではチタン酸化物として存在し、
上記の外側表面近傍と界面近傍との間の記録薄膜の膜厚
方向中間領域においては実質的に非酸化物の状態で存在
する特許請求の範囲第1項に記載の光記録媒体。2. Ti exists as titanium oxide near the outer surface of the recording thin film and near the interface between the recording thin film and the substrate.
The optical recording medium according to claim 1, wherein the optical recording medium exists in a substantially non-oxide state in the intermediate region in the thickness direction of the recording thin film between the vicinity of the outer surface and the vicinity of the interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61255370A JPH0649391B2 (en) | 1986-10-27 | 1986-10-27 | Optical recording medium for DRAW |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61255370A JPH0649391B2 (en) | 1986-10-27 | 1986-10-27 | Optical recording medium for DRAW |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63109087A JPS63109087A (en) | 1988-05-13 |
| JPH0649391B2 true JPH0649391B2 (en) | 1994-06-29 |
Family
ID=17277825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61255370A Expired - Lifetime JPH0649391B2 (en) | 1986-10-27 | 1986-10-27 | Optical recording medium for DRAW |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0649391B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0827973B2 (en) * | 1988-06-27 | 1996-03-21 | 日本電気株式会社 | Optical recording medium |
| DE69738285T2 (en) * | 1996-09-06 | 2008-02-28 | Ricoh Co., Ltd. | Optical storage medium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60184885A (en) * | 1984-03-02 | 1985-09-20 | Sanyo Electric Co Ltd | Optical recording medium |
| JPS6198597A (en) * | 1984-10-19 | 1986-05-16 | Sanyo Electric Co Ltd | Photo-recording medium |
| JPS61204841A (en) * | 1985-03-07 | 1986-09-10 | Sanyo Electric Co Ltd | Optical recording medium |
-
1986
- 1986-10-27 JP JP61255370A patent/JPH0649391B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63109087A (en) | 1988-05-13 |
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