JPH0649940B2 - Vacuum processing device - Google Patents
Vacuum processing deviceInfo
- Publication number
- JPH0649940B2 JPH0649940B2 JP61283316A JP28331686A JPH0649940B2 JP H0649940 B2 JPH0649940 B2 JP H0649940B2 JP 61283316 A JP61283316 A JP 61283316A JP 28331686 A JP28331686 A JP 28331686A JP H0649940 B2 JPH0649940 B2 JP H0649940B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- pressure
- reaction chamber
- vacuum
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005259 measurement Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は予備室と反応室が仕切弁によって仕切られてい
る真空処理装置に関し、特に仕切弁の開く機構に関す
る。TECHNICAL FIELD The present invention relates to a vacuum processing apparatus in which a preparatory chamber and a reaction chamber are partitioned by a sluice valve, and more particularly to a mechanism for opening the sluice valve.
従来この種の真空処理装置は、第２図に示す様に反応室
１の圧力と予備室２の圧力をそれぞれ真空センサー３，
４で測定し予備室２の圧力が反応室１と同圧か、又はそ
れに近いある設定した圧力になったことを真空センサー
３が感知し、真空センサー３からの信号で仕切弁５が開
くという機構になっていた。In the conventional vacuum processing apparatus of this type, as shown in FIG. 2, the pressure in the reaction chamber 1 and the pressure in the preliminary chamber 2 are respectively measured by a vacuum sensor 3,
It is said that the vacuum sensor 3 detects that the pressure in the preliminary chamber 2 measured at 4 is the same as the pressure in the reaction chamber 1 or has reached a set pressure close to that of the reaction chamber 1, and a signal from the vacuum sensor 3 opens the gate valve 5. It was a mechanism.
上述した従来の機構では、予備室２が反応室１と同圧に
なった時に、真空センサー３が仕切弁を開ける信号を出
すことにしても、真空センサー３，４の精度及び零点の
ずれなどから両処理室には微妙な圧力差があり、この様
な圧力差の下で仕切弁５が開くと、反応室１と予備室２
の間に気体の流れが生じてしまう。この気体の流れは真
空処理には悪影響を及ぼすパーティクル発生の原因とな
るという欠点があった。In the above-mentioned conventional mechanism, even if the vacuum sensor 3 outputs a signal to open the sluice valve when the pre-chamber 2 has the same pressure as the reaction chamber 1, the precision of the vacuum sensors 3 and 4 and the shift of the zero point, etc. Therefore, there is a delicate pressure difference between the two processing chambers. When the sluice valve 5 is opened under such a pressure difference, the reaction chamber 1 and the auxiliary chamber 2
A gas flow occurs between the two. This gas flow has a drawback in that it causes the generation of particles which adversely affects the vacuum processing.
本発明は上記欠点を解釈し反応室１と予備室２に圧力差
が無い状態で、仕切弁５が開き、パーティクル発生を防
ぐことを提供するものである。The present invention interprets the above-mentioned drawbacks and provides a method for preventing the generation of particles by opening the sluice valve 5 in a state where there is no pressure difference between the reaction chamber 1 and the auxiliary chamber 2.
本発明の真空処理装置は、反応室と予備室が仕切弁によ
って仕切られ、上記反応室と上記予備室の圧力を等しく
してから上記仕切弁を開く真空処理装置において、上記
反応室の圧力を測定する第１の真空センサー、上記予備
室の圧力を測定する第２の真空センサー、上記反応室と
上記予備室とに共通に接続され、上記第１の真空センサ
ーによる測定結果の読みと上記第２の真空センサーによ
る測定結果の読みとがほぼ等しくなったときに上記反応
室と上記予備室との差圧を測定する圧力センサー、及び
上記圧力センサーの測定結果に応じて働き上記反応室と
上記予備室の圧力を等しくするように調整する圧力調整
器とを有することを特徴としている。In the vacuum processing apparatus of the present invention, the reaction chamber and the auxiliary chamber are partitioned by a sluice valve, and the pressure in the reaction chamber is controlled by opening the sluice valve after equalizing the pressures in the reaction chamber and the auxiliary chamber. A first vacuum sensor for measurement, a second vacuum sensor for measuring the pressure in the spare chamber, a reaction chamber and a spare chamber, which are commonly connected to each other, and read the measurement result by the first vacuum sensor and the first vacuum sensor. The pressure sensor for measuring the differential pressure between the reaction chamber and the auxiliary chamber when the readings of the measurement results by the vacuum sensor of 2 become almost equal, and the pressure sensor works according to the measurement result of the pressure sensor. And a pressure regulator for adjusting the pressures of the preliminary chambers to be equal.
次に本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の一実施例である。反応室１と予備室２
を圧力センサー７で結び、圧力センサー７と両室の間に
バルブ８を設ける。仕切弁６を閉じ、予備室２の真空排
気を行なう。反応室１は真空に保たれており、両室は真
空センサー３，４で測定する。FIG. 1 shows an embodiment of the present invention. Reaction chamber 1 and spare chamber 2
Are connected by a pressure sensor 7, and a valve 8 is provided between the pressure sensor 7 and both chambers. The gate valve 6 is closed and the preliminary chamber 2 is evacuated. The reaction chamber 1 is kept in a vacuum, and both chambers are measured by vacuum sensors 3 and 4.
真空センサー３で予備室２の圧力が真空センサー４での
反応室１の圧力と同程度になったことが検知されると、
この信号によってバルブ８が開き両室の差圧が圧力セン
サー７によって測定される。圧力センサー７の構造は、
２つの固定電極９間に隔膜１０が張られており、圧力変
化で隔膜間の静電容量の変化が電圧計１１に出力される
というものである。電圧計１１の出力電圧に応じて、圧
力調整器１２が働き、反応室１と予備室２の圧力の微調
整を行ない、出力電圧が零になると、この信号が仕切弁
５に送られ、これが開く。When the vacuum sensor 3 detects that the pressure in the auxiliary chamber 2 has reached the same level as the pressure in the reaction chamber 1 by the vacuum sensor 4,
The valve 8 is opened by this signal, and the pressure difference between the two chambers is measured by the pressure sensor 7. The structure of the pressure sensor 7 is
A diaphragm 10 is stretched between two fixed electrodes 9, and a change in capacitance between the diaphragms is output to a voltmeter 11 due to a pressure change. The pressure regulator 12 operates according to the output voltage of the voltmeter 11 to finely adjust the pressures of the reaction chamber 1 and the auxiliary chamber 2. When the output voltage becomes zero, this signal is sent to the sluice valve 5, which open.
次に、被処理物の半導体基板に化学気相成長を行う真空
処理装置を用いた場合を例にとり、効果を説明する。反
応室１が２．１Ｔｏｒｒ、予備室２が２．０Ｔｏｒｒと
いうような圧力差のもとで仕切弁５をあけた場合、反応
室１から予備室２へ向かう気流の流れが生じ、この気流
は化学気相成長によって発生した反応室１内に存在する
塵埃を浮遊、流動させ半導体基板に粒径が０．３μｍ以
上のパーティクルを数千個のレベルで付着させるという
問題を生じる。これに対し、本願によれば、圧力差がな
い状態で、仕切弁５を開くことが可能になるので、半導
体基板へのパーティクル付着数は粒径が０．３μｍ以上
のもので数十個レベルへ激減できることが確認された。Next, the effects will be described by taking as an example the case where a vacuum processing apparatus for performing chemical vapor deposition on a semiconductor substrate of an object to be processed is used. When the sluice valve 5 is opened under a pressure difference such as 2.1 Torr in the reaction chamber 1 and 2.0 Torr in the auxiliary chamber 2, a flow of air flow from the reaction chamber 1 to the auxiliary chamber 2 occurs, and this air flow is Dust existing in the reaction chamber 1 generated by the chemical vapor deposition floats and flows to cause a problem that particles having a particle diameter of 0.3 μm or more adhere to the semiconductor substrate at a level of several thousands. On the other hand, according to the present application, the sluice valve 5 can be opened in the state where there is no pressure difference, so that the number of particles adhering to the semiconductor substrate is several tens of particles with a particle size of 0.3 μm or more It has been confirmed that it can be dramatically reduced.
以上説明したように本発明は反応室と予備室に圧力差が
無い状態で仕切弁を開けることにより、両室間に生ずる
気体の流れを防ぐことができ、真空処理工程におけるパ
ーティクルの発生を激減できる効果がある。As described above, according to the present invention, by opening the sluice valve in a state where there is no pressure difference between the reaction chamber and the auxiliary chamber, the flow of gas generated between the two chambers can be prevented, and the generation of particles in the vacuum processing step is drastically reduced. There is an effect that can be done.
第１図は本発明の一実施例を示す図、第２図は従来の真
空処理装置の概念図である。 １…反応室、２…予備室、３，４…真空センサー、５，
６…仕切弁、７…圧力センサー、８…バルブ、９…電
極、１０…隔膜、１１…電圧計、１２…圧力調整器。FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a conceptual diagram of a conventional vacuum processing apparatus. 1 ... Reaction chamber, 2 ... Preliminary chamber, 3, 4 ... Vacuum sensor, 5,
6 ... Gate valve, 7 ... Pressure sensor, 8 ... Valve, 9 ... Electrode, 10 ... Diaphragm, 11 ... Voltmeter, 12 ... Pressure regulator.
Claims (1)
れ、前記反応室と前記予備室の圧力を等しくしてから前
記仕切弁を開く真空処理装置において、前記反応室の圧
力を測定する第１の真空センサー、前記予備室の圧力を
測定する第２の真空センサー、前記反応室と前記予備室
とに共通に接続され、前記第１の真空センサーによる測
定結果の読みと前記第２の真空センサーによる測定結果
の読みとがほぼ等しくなったときに前記反応室と前記予
備室との差圧を測定する圧力センサー、前記圧力センサ
ーの測定結果に応じて働き前記反応室と前記予備室の圧
力を等しくするように調整する圧力調整器とを有するこ
とを特徴とする真空処理装置。1. A vacuum processing apparatus in which a reaction chamber and a preparatory chamber are partitioned by a sluice valve, and the pressure in the reaction chamber is measured in a vacuum processing apparatus in which the sluice valve is opened after equalizing the pressures in the reaction chamber and the preparatory chamber. No. 1 vacuum sensor, a second vacuum sensor for measuring the pressure in the preliminary chamber, the reaction chamber and the preliminary chamber are commonly connected, and the reading of the measurement result by the first vacuum sensor and the second vacuum A pressure sensor that measures the differential pressure between the reaction chamber and the auxiliary chamber when the readings of the measurement results by the sensor become substantially equal, and the pressure of the reaction chamber and the auxiliary chamber that operates according to the measurement result of the pressure sensor And a pressure regulator for adjusting the pressures to be equal to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283316A JPH0649940B2 (en) | 1986-11-27 | 1986-11-27 | Vacuum processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283316A JPH0649940B2 (en) | 1986-11-27 | 1986-11-27 | Vacuum processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63137169A JPS63137169A (en) | 1988-06-09 |
| JPH0649940B2 true JPH0649940B2 (en) | 1994-06-29 |
Family
ID=17663882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61283316A Expired - Lifetime JPH0649940B2 (en) | 1986-11-27 | 1986-11-27 | Vacuum processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0649940B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0557170A (en) * | 1991-08-29 | 1993-03-09 | Nec Corp | Vacuum treatment apparatus |
| JPH10270164A (en) * | 1997-03-26 | 1998-10-09 | Idemitsu Kosan Co Ltd | Method and apparatus for manufacturing organic electroluminescence element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487477A (en) * | 1977-12-23 | 1979-07-11 | Kokusai Electric Co Ltd | Device for etching and stripping semiconductor wafer |
-
1986
- 1986-11-27 JP JP61283316A patent/JPH0649940B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63137169A (en) | 1988-06-09 |
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