JPH0649950B2 - Composite comprising Ti metal layer and Ba1-xSrxTiO3 coating and method for producing the same - Google Patents
Composite comprising Ti metal layer and Ba1-xSrxTiO3 coating and method for producing the sameInfo
- Publication number
- JPH0649950B2 JPH0649950B2 JP59150430A JP15043084A JPH0649950B2 JP H0649950 B2 JPH0649950 B2 JP H0649950B2 JP 59150430 A JP59150430 A JP 59150430A JP 15043084 A JP15043084 A JP 15043084A JP H0649950 B2 JPH0649950 B2 JP H0649950B2
- Authority
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- Prior art keywords
- coating
- metal layer
- composite
- xsrxtio
- bal
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
- C01G23/006—Alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/60—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
- C23C22/64—Treatment of refractory metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Geology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Inorganic Insulating Materials (AREA)
- Laminated Bodies (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Treatment Of Metals (AREA)
Description
【発明の詳細な説明】 電子機器の小形、軽量化を実現させるための各種電子部
品の急速な発達に伴い、特に混成集積回路においては、
その小形、軽量化、高性能化、高周波化等が強く要望さ
れている。混成集積回路は、Ｒ，Ｃ，Ｌ，Tr等で構成さ
れているが、現在小形、軽量化の障害となつているのは
ＣとＬであり、高周波化が可能であればＬは小さくな
り、Ｃが問題として残ることになる。従来、混成集積回
路において使用されている固体電解コンデンサ、薄膜コ
ンデンサ等は、Al、Ta等の金属上に緻密で耐食性のある
酸化被膜を陽極酸化法により形成し、このAl2O3，Ta2O5
よりなる酸化被膜の誘電特性を利用している。DETAILED DESCRIPTION OF THE INVENTION With the rapid development of various electronic parts for realizing miniaturization and weight saving of electronic devices, particularly in a hybrid integrated circuit,
There is a strong demand for smaller size, lighter weight, higher performance, and higher frequency. The hybrid integrated circuit is composed of R, C, L, Tr, etc., but C and L are the obstacles to miniaturization and weight reduction at present, and L becomes smaller if higher frequency is possible. , C will remain as a problem. Conventionally, solid electrolytic capacitors, thin film capacitors, etc. used in hybrid integrated circuits have a dense and corrosion-resistant oxide film formed on a metal such as Al, Ta, etc. by anodization, and the Al 2 O 3 , Ta 2 O 5
The dielectric properties of the oxide film are used.
ここで酸化被膜の誘電率をε、表面積をＳ(cm2)、厚さ
ｄ(cm)とすると、静電容量Ｃ（μＦ）は次式で与えられ
る。Here, assuming that the dielectric constant of the oxide film is ε, the surface area is S (cm 2 ), and the thickness is d (cm), the electrostatic capacitance C (μF) is given by the following equation.
Ｃ＝8.855×10-8ε・Ｓ／ｄ 従つて、小形化のためには電極面積Ｓ、厚さｄには限度
があり、同体積で大きな容量を得ようとする場合、誘電
率εを大きくすることが必要になる。高い誘電率が得ら
れる酸化被膜として実用に供されている主なものが、上
述のAl2O3，Ta2O5である。更に高い誘電率を有する複合
酸化物として、例えばチタン酸バリウムストロンチウム
Bal-xSrxTiO3（０＜ｘ＜１）があり、この薄膜をスパツ
タリングにより形成する方法が試みられたことがある。
しかし、この方法による場合、所望の組成を有する薄膜
を形成することが難しいため、未だ実用化には至つてい
ない。C = 8.855 × 10 -8 ε · S / d Therefore, there is a limit to the electrode area S and thickness d for downsizing, and in order to obtain a large capacitance with the same volume, the dielectric constant ε It needs to be large. The above-mentioned Al 2 O 3 and Ta 2 O 5 are mainly used practically as an oxide film having a high dielectric constant. As a complex oxide having a higher dielectric constant, for example, barium strontium titanate is used.
There is Bal-xSrxTiO 3 (0 <x <1), and a method of forming this thin film by sputtering has been tried.
However, according to this method, it is difficult to form a thin film having a desired composition, so that it has not been put to practical use yet.
本発明は、特にコンデンサに使用して好適なBal-xSrxTi
O3を使用した複合体及びその製造方法を提供するもので
ある。The present invention is particularly suitable for use as a capacitor in Bal-xSrxTi
A composite using O 3 and a method for producing the same are provided.
本発明は、Ti金属層とこのTi金属層上に形成されたBal-
xSrxTiO3（但し、０＜ｘ＜１）が被膜とを有して成る複
合体である。この複合体は、Ti金属をBa2+が0.1mol/
以上とSr2+が0.1mol/以上含まれた強アルカリ性水溶
液中で化成処理することにより得られる。The present invention is directed to a Ti metal layer and a Bal- layer formed on the Ti metal layer.
xSrxTiO 3 (where 0 <x <1) is a composite having a coating. This composite contains Ti metal with Ba 2+ of 0.1 mol /
The above is obtained by chemical conversion treatment in a strong alkaline aqueous solution containing 0.1 mol / mol or more of Sr 2+ .
このTi金属層としては、例えば次のようにして得たもの
を使用することができる。第１図Ａに示すように各種セ
ラミツク基板又はガラス基板等の基板(1)に蒸着法、電
子ビーム蒸着法、スパツタ法等によりAu層(2)を形成し
た後、第１図Ｂに示すようにフオトレジスト（例えばＯ
ＭＲ−８３：東京応用化学社製）をマスクにしてAu層
(2)を部分的にエツチング液（ヨウ化アンモニウム：２
ｇ、ヨウ素：0.3ｇ、アルコール：10m、水：15m）
で除去する。また、この第１図Ｂに示す基板は、基板
(1)上にAuペーストのパターンをスクリーン印刷した
後、熱処理することにより、又はAuペーストをマスク蒸
着、マスクスパツタリング等で形成することにより得ら
れる。この後、第１図Ｃに示すように、この基板(1)上
に蒸着法、電子ビーム蒸着法、スパツタ法等によりTi金
属層(3)を形成し、次に第１図Ｄに示すようにフオトレ
ジストをマスクにしてエツチングによりAu層(2)上以外
のTi金属層(3)を除去して、本発明において使用するTi
金属層(3)を得る。また、このように形成されたTi金属
層(3)は、マスク蒸着法、マスクスパツタ法等により直
接得ることもできる。これを使用してコンデンサを構成
する場合には、先ず第１図Ｄの基板(1)に対して化成処
理を施して、Ti金属層(3)の全部をBal-xSrxTiO3層(4)に
化成させたもの（第１図Ｅ）、又はTi金属層(3)の一部
である表面部分だけBal-xSrxTiO3層(4)に化成させたも
の（第１図Ｆ）を得る。この後、第１図Ｇに示すように
このBal-xSrxTiO3層(4)上に対極となるAuの電極(5)を形
成する。また、第１図Ｈに示すように、Bal-xSrxTiO3層
(4)上に必要に応じてMnO2層(6)を設けるようにしてもよ
い。また、Ti金属の粉末(7)を第２図に示すようにTi棒
(8)の回りに部分的に焼結させたものを使用することが
できる。これを使用してコンデンサを構成する場合に
は、先ず焼結させた粉末(7)及びTi棒(8)上に化成処理を
してBal-xSrxTiO3被膜を形成する。次に、必要に応じて
MnO2層(9)を形成し、この上にカーボン層(10)を形成し
た後、対極となる電極(11)を設ける。(12)は、ケースで
ある。As this Ti metal layer, for example, the one obtained as follows can be used. As shown in FIG. 1A, after the Au layer (2) is formed on the substrate (1) such as various ceramic substrates or glass substrates by the vapor deposition method, the electron beam vapor deposition method, the sputtering method, etc., as shown in FIG. 1B. Photo resist (eg O
MR-83: Tokyo Applied Chemical Co., Ltd.) as a mask and Au layer
Part of (2) is an etching solution (ammonium iodide: 2
g, iodine: 0.3g, alcohol: 10m, water: 15m)
To remove. Further, the substrate shown in FIG. 1B is a substrate
(1) It is obtained by screen-printing an Au paste pattern on the surface and then heat-treating it, or by forming the Au paste by mask vapor deposition, mask sputtering, or the like. Thereafter, as shown in FIG. 1C, a Ti metal layer (3) is formed on the substrate (1) by a vapor deposition method, an electron beam vapor deposition method, a sputtering method or the like, and then as shown in FIG. 1D. Then, the Ti metal layer (3) other than on the Au layer (2) is removed by etching with a photoresist as a mask, and the Ti layer used in the present invention is removed.
A metal layer (3) is obtained. Further, the Ti metal layer (3) thus formed can be directly obtained by a mask vapor deposition method, a mask sputtering method or the like. When a capacitor is constructed using this, first, the substrate (1) shown in FIG. 1D is subjected to chemical conversion treatment so that the entire Ti metal layer (3) is converted into the Bal-xSrxTiO 3 layer (4). A chemical compound (FIG. 1E) or a chemical conversion film (FIG. 1F) of the Bal-xSrxTiO 3 layer (4) formed only on the surface part of the Ti metal layer (3) is obtained. After that, as shown in FIG. 1G, an Au electrode (5) serving as a counter electrode is formed on the Bal-xSrxTiO 3 layer (4). In addition, as shown in FIG. 1H, the Bal-xSrxTiO 3 layer
An MnO 2 layer (6) may be provided on the (4) if necessary. Also, as shown in Fig. 2, Ti metal powder (7) was added to the Ti bar.
It is possible to use a partially sintered product around (8). When a capacitor is constructed using this, first, a conversion treatment is performed on the sintered powder (7) and Ti rod (8) to form a Bal-xSrxTiO 3 coating. Then, if necessary
An MnO 2 layer (9) is formed, a carbon layer (10) is formed on the MnO 2 layer (9), and then an electrode (11) serving as a counter electrode is provided. (12) is a case.
化成溶液のBa2+濃度とSr2+濃度は、それぞれ少なくとも
0.1mol/以上が必要である。また、化成溶液のpHは12.
5以上、化成温度は55℃以上、化成時間は１分以上あれ
ばよい。なお、Ba2+は、例えばBaCl2，Ba(NO3)2，Ba(CH
3COO)2，Ba(OH)2・8H2O等の可溶性Ba塩より得られる。ま
た、Sr2+は、例えばSrO，SrCl2，Sr(NO3)2，Sr(CH3COO)
2，Sr(OH)2，Sr(OH)2・8H2O等の可溶性Sr塩より得られ
る。The Ba 2+ concentration and Sr 2+ concentration of the chemical conversion solution should be at least
0.1mol / or more is required. The pH of the chemical conversion solution is 12.
5 or more, the formation temperature is 55 ° C. or more, and the formation time is 1 minute or more. Note that Ba 2+ is, for example, BaCl 2 , Ba (NO 3 ) 2 , Ba (CH
It is obtained from soluble Ba salts such as 3 COO) 2 and Ba (OH) 2 · 8H 2 O. Sr 2+ is, for example, SrO, SrCl 2 , Sr (NO 3 ) 2 and Sr (CH 3 COO)
It is obtained from soluble Sr salts such as 2 , Sr (OH) 2 and Sr (OH) 2 · 8H 2 O.
本発明は、上述した通り、強誘電体である複合酸化物の
Bal-xSrxTiO3被膜がTi金属上に形成された複合体及びこ
の複合体が水溶液化成により初めて形成可能となつた製
造方法である。この製法により析出したBal-xSrxTiO
3は、組成上安定したペロブスカイト型であり、緻密な
粒子で構成されている。本発明の複合体を使用すること
により、コンデンサのより小形化、軽量化、大容量化等
が可能になり、例えばIC、LSI自体の内部にコンデンサ
を形成することも充分可能である。また、BaTiO3及びSr
TiO3と比較した場合、本発明によればBaとSrの比を変え
ることにより誘電率とキユリー温度を変えることができ
る。As described above, the present invention provides a ferroelectric composite oxide.
This is a composite in which a Bal-xSrxTiO 3 coating is formed on a Ti metal, and a manufacturing method in which the composite can be formed for the first time by aqueous solution formation. Bal-xSrxTiO deposited by this method
3 is a stable perovskite type composition, and is composed of dense particles. By using the composite of the present invention, it is possible to make the capacitor smaller, lighter, and have a larger capacity, and it is also possible to sufficiently form the capacitor inside, for example, the IC or LSI itself. In addition, BaTiO 3 and Sr
When compared with TiO 3 , according to the present invention, the dielectric constant and the Curie temperature can be changed by changing the ratio of Ba and Sr.
なお、本発明は、本出願人が先に提案した特願昭58-224
844「Ti金属層とBaTiO3被膜よりなる複合体及びその製
造方法」及び特願昭58-229721「Ti金属層とSrTiO3被膜
よりなる複合体及びその製造方法」の応用に係る。The present invention is based on Japanese Patent Application No. 58-224 previously proposed by the applicant.
844 relates to application of “composite composed of Ti metal layer and BaTiO 3 coating and its manufacturing method” and Japanese Patent Application No. 58-229721 “composite composed of Ti metal layer and SrTiO 3 coating and its manufacturing method”.
以下、本発明を実施例に基づいて説明する。Hereinafter, the present invention will be described based on examples.
実施例 実施例１ 先ず、トリクレンで脱脂したTi金属板（50mm×20mm×0.
3mm）を4N-HNO3溶液に浸漬した後水洗し、次にHF：15vo
l％，HNO3：20vol％，H2O：65vol％の混合溶液中、室温
で30〜60秒間表面層をエツチングし、その後水洗するこ
とにより前処理したものを用意する。次に、200ccビー
カに63.12ｇのBa(OH2)2・8H2Oと53.16ｇのSr(OH)2・8H2O
と純水を加えて200ccとした溶液（それぞれ1mol/）を
沸騰させ、この溶液中に上記前処理したTi金属板を６０
分間浸漬することにより化成処理を施す。この後、水洗
して化成溶液を除去し、乾燥させる。Examples Example 1 First, a Ti metal plate degreased with trichlene (50 mm x 20 mm x 0.
3mm) is soaked in 4N-HNO 3 solution and washed with water, then HF: 15vo
1%, HNO 3 : 20 vol%, H 2 O: 65 vol% Etching the surface layer at room temperature for 30 to 60 seconds in a mixed solution and then pre-treating by washing with water. Then, of 63.12g to 200cc beaker Ba (OH 2) of 2 · 8H 2 O and 53.16g Sr (OH) 2 · 8H 2 O
A solution (1 mol / each) made up to 200 cc by adding pure water and pure water is boiled, and the above-prepared Ti metal plate is placed in this solution at 60 mol.
A chemical conversion treatment is performed by immersing for a minute. After that, it is washed with water to remove the chemical conversion solution and dried.
上記操作により形成されたTi金属板表面部の被膜をＸ線
回折（銅ターゲツト、ニツケルフイルタにより分析した
結果を第３図に示す。このＸ線回折チヤートから、各々
の回折ピークが分岐していないので、この被膜は立方晶
系ペロブスカイト型のBal-xSrxTiO3であることが確認で
きた。また、螢光Ｘ線分析によると、この被膜中のBa：
Sr：Ti比は１：１：２であり、Ba0.5Sr0.5TiO3被膜であ
ることが確認できた。The result of X-ray diffraction analysis of the coating on the surface of the Ti metal plate formed by the above-mentioned operation by means of X-ray diffraction (copper target, nickel filter) is shown in FIG. Therefore, it was confirmed that this film was cubic perovskite type Bal-xSrxTiO 3. Further , fluorescent X-ray analysis revealed that Ba:
The Sr: Ti ratio was 1: 1: 2, and it was confirmed that the film was a Ba 0.5 Sr 0.5 TiO 3 coating.
実施例２ Ba：Sr：Ti比の異つたBal-xSrxTiO3被膜を得るため、Ti
金属板をBa(OH)2・8H2OとSr(OH)2・8H2Oとが下記表の右欄
の量含まれた200cc溶液中に浸漬して化成処理を施し
た。これらの４種類の化成被膜について螢光Ｘ線分析を
行つたところ、下記表の左欄のBa：Sr：Ti比を有するBa
l-xSrxTiO3被膜が形成されていることが確かめられた。Example 2 In order to obtain a Bal-xSrxTiO 3 coating having a different Ba: Sr: Ti ratio, Ti
The metal plate was subjected to chemical conversion treatment by immersing it in a 200 cc solution containing Ba (OH) 2 .8H 2 O and Sr (OH) 2 .8H 2 O in the amounts shown in the right column of the table below. Fluorescent X-ray analysis was performed on these four types of conversion coatings, and the Ba: Sr: Ti ratio in the left column of the table below was obtained.
It was confirmed that the l-xSrxTiO 3 coating was formed.
Ba／Sr＝４とした化成溶液より得られたBa0.8Sr0.2TiO3
被膜表面の角度を変えた２つの走査型電子顕微鏡写真を
第４図及び第５図に示す。これらの写真から、化成被膜
は一様に形成されていることがわかる。 Ba 0.8 Sr 0.2 TiO 3 obtained from the chemical conversion solution with Ba / Sr = 4
Two scanning electron micrographs with different angles of the coating surface are shown in FIGS. 4 and 5. From these photographs, it can be seen that the conversion coating is uniformly formed.
次に、化成溶液中のBa／Sr比を変え、生成した化成皮膜
の格子定数を測定した結果を第６図に示す。また、化成
溶液中のSr／(Ba+Sr)比を変え、生成した化成被膜のキ
ユリー温度Tcを測定した結果を第７図に示す。Next, FIG. 6 shows the results of measuring the lattice constant of the formed chemical conversion film while changing the Ba / Sr ratio in the chemical conversion solution. Further, FIG. 7 shows the result of measuring the Curie temperature Tc of the formed conversion film by changing the Sr / (Ba + Sr) ratio in the conversion solution.
第１図Ａ〜Ｈは本発明に基づくコンデンサの製法を示す
工程図、第２図は他のコンデンサの断面図、第３図は本
発明により化成したBa0.5Sr0.5TiO3被膜のＸ線回折パタ
ーンを示す図、第４図及び第５図はBa0.8Sr0.2TiO3被膜
の粒子構造を示す走査型電子顕微鏡写真、第６図は溶液
中のBa／Srを変えて化成した被膜の格子定数を測定した
グラフ、第７図は溶液中のSr／(Ba+Sr)を変えて化成し
た被膜のキュリー温度Tcを測定したグラフである。1A to 1H are process diagrams showing a method for producing a capacitor according to the present invention, FIG. 2 is a sectional view of another capacitor, and FIG. 3 is an X-ray diffraction of a Ba 0.5 Sr 0.5 TiO 3 coating formed by the present invention. Figures showing the pattern, Figures 4 and 5 are scanning electron micrographs showing the grain structure of the Ba 0.8 Sr 0.2 TiO 3 coating, and Figure 6 is the lattice constant of the coating formed by changing the Ba / Sr in the solution. FIG. 7 is a graph showing the Curie temperature Tc of a film formed by changing Sr / (Ba + Sr) in the solution.
Claims (2)
xSrxTiO3（但し、０＜ｘ＜１）被膜とを有してなる複合
体。1. A Ti metal layer and a Bal- formed on the Ti metal layer.
A composite body having an xSrxTiO 3 (where 0 <x <1) coating.
mol/以上含まれた強アルカリ性水溶液中で化成処理す
ることによりBal-xSrxTiO3（但し、０＜ｘ＜１）被膜を
形成させることを特徴とするTi金属層とBal-xSrxTiO3被
膜よりなる複合体の製造方法。2. A Ti metal having a Ba 2+ content of 0.1 mol / or more and a Sr 2+ content of 0.1
A composite of a Ti metal layer and a Bal-xSrxTiO 3 coating characterized by forming a Bal-xSrxTiO 3 (where 0 <x <1) coating by chemical conversion treatment in a strong alkaline aqueous solution containing mol / mol or more. Body manufacturing method.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59150430A JPH0649950B2 (en) | 1984-07-19 | 1984-07-19 | Composite comprising Ti metal layer and Ba1-xSrxTiO3 coating and method for producing the same |
| DE8484308202T DE3472420D1 (en) | 1983-11-29 | 1984-11-27 | Methods of manufacturing dielectric metal titanates |
| EP84308202A EP0146284B1 (en) | 1983-11-29 | 1984-11-27 | Methods of manufacturing dielectric metal titanates |
| US06/675,448 US4587041A (en) | 1983-11-29 | 1984-11-28 | Method for manufacturing dielectric metal titanate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59150430A JPH0649950B2 (en) | 1984-07-19 | 1984-07-19 | Composite comprising Ti metal layer and Ba1-xSrxTiO3 coating and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6130678A JPS6130678A (en) | 1986-02-12 |
| JPH0649950B2 true JPH0649950B2 (en) | 1994-06-29 |
Family
ID=15496751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59150430A Expired - Lifetime JPH0649950B2 (en) | 1983-11-29 | 1984-07-19 | Composite comprising Ti metal layer and Ba1-xSrxTiO3 coating and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0649950B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008090985A1 (en) | 2007-01-26 | 2008-07-31 | Showa Denko K.K. | Capacitor material, method for manufacturing the capacitor material, capacitor containing the capacitor material, wiring board and electronic device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2673147B2 (en) * | 1990-01-23 | 1997-11-05 | 株式会社 大真空 | Method for producing titanium metal composite material on which crystalline metal titanate thin film is formed |
| JPH0788219B2 (en) * | 1990-03-06 | 1995-09-27 | 日本電気株式会社 | Method for manufacturing high dielectric constant thin film |
| JP3225583B2 (en) * | 1992-04-10 | 2001-11-05 | 株式会社村田製作所 | Barium titanate thin film forming method |
| JP4652406B2 (en) | 2005-07-29 | 2011-03-16 | 昭和電工株式会社 | Composite oxide film and manufacturing method thereof, dielectric material including composite oxide film, piezoelectric material, capacitor, piezoelectric element, and electronic device |
| US7697267B2 (en) | 2005-12-28 | 2010-04-13 | Showa Denko K.K. | Capacitor and method for manufacturing same |
| EP1975127B1 (en) * | 2005-12-28 | 2017-03-01 | Showa Denko K.K. | Complex oxide film and method for producing same, composite body and method for producing same, dielectric material, piezoelectric material, capacitor and electronic device |
| EP1978000B1 (en) | 2005-12-28 | 2013-02-27 | Showa Denko K.K. | Composite body and method for producing same, dielectric material, piezoelectric material, capacitor, piezoelectric element and electronic device |
| JPWO2008133243A1 (en) * | 2007-04-23 | 2010-07-29 | 三井金属鉱業株式会社 | BST-based dielectric layer, capacitor layer forming material including the BST-based dielectric layer, capacitor layer constituent member with electrode circuit, and printed wiring board including a built-in capacitor circuit |
-
1984
- 1984-07-19 JP JP59150430A patent/JPH0649950B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008090985A1 (en) | 2007-01-26 | 2008-07-31 | Showa Denko K.K. | Capacitor material, method for manufacturing the capacitor material, capacitor containing the capacitor material, wiring board and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6130678A (en) | 1986-02-12 |
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Legal Events
| Date | Code | Title | Description |
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| EXPY | Cancellation because of completion of term |