JPH0652178B2 - Magnetic head and manufacturing method thereof - Google Patents
Magnetic head and manufacturing method thereofInfo
- Publication number
- JPH0652178B2 JPH0652178B2 JP59046399A JP4639984A JPH0652178B2 JP H0652178 B2 JPH0652178 B2 JP H0652178B2 JP 59046399 A JP59046399 A JP 59046399A JP 4639984 A JP4639984 A JP 4639984A JP H0652178 B2 JPH0652178 B2 JP H0652178B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- conductive layer
- substrate
- insulating layer
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 35
- 238000007740 vapor deposition Methods 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 13
- 230000000873 masking effect Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Transmission And Conversion Of Sensor Element Output (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】 本発明は角度や位置の検出ができる磁気エンコーダの磁
気ヘッドに関する。The present invention relates to a magnetic head of a magnetic encoder capable of detecting an angle and a position.
磁気エンコーダは、例えば特開昭55−146007号公報等に
記載されているように円板状又は帯状の磁気媒体の周辺
部に角度コード又はリニアコードを示す磁気マークを設
けて成る磁気コード盤を回動又は相対的に摺動自在に支
承すると共に、上記回動又は相対的に摺動する磁気コー
ド盤のコード記録面に磁気ヘッドを接触又は微少距離隔
てて対向させ、上記コードを読み取る方式のものが公知
である。The magnetic encoder is, for example, as described in Japanese Patent Application Laid-Open No. 55-146007, a magnetic code disk which is provided with magnetic marks indicating an angle code or a linear code on the periphery of a disk-shaped or strip-shaped magnetic medium. A method of reading the above-mentioned code by supporting the magnetic recording head of the magnetic code board that rotates or relatively slides while contacting or facing the code recording surface of the magnetic code board that rotates or relatively slides with a slight distance. Things are known.
従来の磁気エンコーダの磁気ヘッドに於ては、磁気ヘッ
ドの基板上にＩ字形状の磁気抵抗素子を蒸着等し、その
Ｉ字形状の磁気抵抗素子の両端を端子部とし、両端の端
子部から配線等を行なうようにしていた。In a magnetic head of a conventional magnetic encoder, an I-shaped magnetoresistive element is vapor-deposited on a substrate of the magnetic head, and both ends of the I-shaped magnetoresistive element are used as terminal portions. Wiring was done.
然しながら、叙上の如き従来の構成では、配線等の煩雑
を生じていた、この問題点を改良したものが、例えば第
１図にその分解斜視図で示すようなものがある（特開昭
56−022961号公報）。However, in the conventional structure as described above, there is an improved one in which the wiring and the like are complicated, for example, as shown in its exploded perspective view in FIG.
56-022961).
第１図中、１は基板２、磁気抵抗素子３及び保護膜４か
ら成る磁気ヘッドであり、磁気抵抗素子３はリード部３
ａ、磁気検知部３ｂ及び端子部３ｃ、３ｄから成る。In FIG. 1, reference numeral 1 is a magnetic head including a substrate 2, a magnetoresistive element 3 and a protective film 4, and the magnetoresistive element 3 is a lead portion 3.
a, a magnetic detection unit 3b, and terminal units 3c and 3d.
而して、磁気ヘッド１は、通常ガラス材等の絶縁材から
成る基板２と、その上に所定のパターンの有するマスク
により、ＩｎＳｂ、ＮｉＳｂやパーマロイ等を200 Å程
度の厚さに蒸着スパッタリング又はイオンプレーティン
グやＣＶＤ法等で薄膜として形成した磁気抵抗素子３
と、その上に端子部３ｃ及び３ｄを除きカバーガラスを
50μ程度の厚さに蒸着した保護膜４とから構成している
ものである。Thus, the magnetic head 1 is formed of InSb, NiSb, Permalloy or the like by vapor deposition sputtering or sputtering with a substrate 2 usually made of an insulating material such as a glass material and a mask having a predetermined pattern thereon. Magnetoresistive element 3 formed as a thin film by ion plating or CVD
And cover glass on top of it except the terminals 3c and 3d.
The protective film 4 has a thickness of about 50 μm.
磁気抵抗素子３は、基板２の同一平面内の一辺に端子部
３ｃ及び３ｄを設け、一方の端子部３ｃから磁気検知部
３ｂ及びリード部３ａを通じて他方の端子部３ｄとした
コ字形の形状であり、磁気検知部３ｂで図示せぬ磁気コ
ード盤のコードを読み取り検出し、それぞれの端子部３
ｃ及び３ｄから信号を伝えるものである。The magnetoresistive element 3 is provided with terminal portions 3c and 3d on one side in the same plane of the substrate 2, and has a U-shaped shape from one terminal portion 3c through the magnetic detection portion 3b and the lead portion 3a to the other terminal portion 3d. Yes, the magnetic detection unit 3b reads and detects a code on a magnetic code board (not shown), and the respective terminal units 3
The signal is transmitted from c and 3d.
然しながら、このように磁気抵抗素子３のリード部３ａ
と検出部３ｂ及び両端子部３ｃ，３ｄを一平面内に形成
すると共に両端子部３ｃ，３ｄを一辺に集中させると、
リード部の抵抗によって実効感度を低下させてしまうと
云う問題点があった。However, the lead portion 3a of the magnetoresistive element 3 is
When the detection part 3b and both terminal parts 3c and 3d are formed in one plane and both terminal parts 3c and 3d are concentrated on one side,
There is a problem in that the resistance of the lead portion lowers the effective sensitivity.
本発明は叙上の観点に立ってなされたものであり、本発
明の目的とするところは、上記問題点を解決して磁気抵
抗素子のリード部の抵抗による実効感度の低下を防止す
ることができ、且つ基板の一方の側に端子を集中させ配
線等の作業を単純にした新規な磁気エンコーダの磁気ヘ
ッド及びその製造方法を提供することにある。The present invention has been made from the above viewpoint, and an object of the present invention is to solve the above problems and prevent a decrease in effective sensitivity due to the resistance of the lead portion of the magnetoresistive element. (EN) It is possible to provide a novel magnetic encoder magnetic head in which terminals can be concentrated on one side of a substrate and the work of wiring and the like can be simplified, and a method of manufacturing the same.
而して、上記目的を達成するため、本発明の磁気ヘッド
は、絶縁性の基板と、該基板上に形成される薄膜状の導
電層と、上記基板の両端部分を除く上記導電層上に形成
される薄膜状の絶縁層と、該絶縁層の形成されていない
上記記板一端部の上記導電層上と上記絶縁層上に形成さ
れる薄膜状の磁気抵抗素子と、該磁気抵抗素子上の上記
基板他端部側の端部を除く部分に形成される薄膜状の保
護膜とから成り、上記記板一端部に於ける上記導電層と
上記磁気抵抗素子とを密着した積層状態として一体の接
続関係に形成すると共に、上記基板他端部側に於て階段
状に形成される上記導電層と上記磁気抵抗素子の各端部
をコード読み取り検出の端子部として成ることを特徴と
する。In order to achieve the above object, the magnetic head of the present invention comprises an insulating substrate, a thin-film conductive layer formed on the substrate, and the conductive layer except for both end portions of the substrate. A thin-film insulating layer to be formed, a thin-film magnetoresistive element formed on the conductive layer and the insulating layer at one end of the plate without the insulating layer, and on the magnetoresistive element And a thin protective film formed on a portion of the substrate other than the end portion on the other end side, and the conductive layer and the magnetoresistive element at one end portion of the recording plate are integrated as a laminated state in close contact with each other. And the conductive layer formed stepwise on the other end side of the substrate and the respective end portions of the magnetoresistive element serve as terminal portions for code reading and detection.
又、叙上の磁気ヘッドは、絶縁性の基板を形成する工程
と、上記工程で形成した基板上に導電層を蒸着等の薄膜
形成手段により形成する工程と、上記導電層上にその端
子部及び後段の工程で形成される磁気抵抗素子のリード
部を除き絶縁層を蒸着等の薄膜形成手段により形成する
工程と、上記端子部を除く導電層上及び上記絶縁層上
に、一部分マスキングした後、磁気抵抗素子を蒸着等の
薄膜形成手段により形成する工程と、上記磁気抵抗素子
の端子部を除く磁気抵抗素子上及び磁気抵抗素子の薄膜
が形成されず露出した状態の絶縁層上に保護膜を蒸着等
の薄膜形成手段により形成する工程とによって製造され
る。Further, the above magnetic head has a step of forming an insulating substrate, a step of forming a conductive layer on the substrate formed in the above step by thin film forming means such as vapor deposition, and a terminal portion thereof on the conductive layer. And a step of forming an insulating layer by a thin film forming means such as vapor deposition except the lead portion of the magnetoresistive element formed in the subsequent step, and after partially masking on the conductive layer and the insulating layer except the terminal portion. A step of forming the magnetoresistive element by a thin film forming means such as vapor deposition, and a protective film on the magnetoresistive element excluding the terminal portion of the magnetoresistive element and on the insulating layer in an exposed state where the thin film of the magnetoresistive element is not formed. Is formed by a thin film forming means such as vapor deposition.
以下、図面により本発明の詳細を具体的に説明する。Hereinafter, the details of the present invention will be specifically described with reference to the drawings.
尚、以下の実施例に於ては、導電層、絶縁層、磁気抵抗
素子層及び保護膜の各薄膜を慣用の真空蒸着法によって
形成した場合につき説明を加えるが、各種の磁電変換素
子等の半導体デバイスの薄膜を形成する手段としての所
謂スパッタリング法、手法や価格が蒸着法に比してやゝ
複雑か幾分高価格となるイオンプレーティング法やＣＶ
Ｄ法等も適宜に適用可能なものである。In the following examples, a description will be given of the case where each thin film of a conductive layer, an insulating layer, a magnetoresistive element layer, and a protective film is formed by a conventional vacuum vapor deposition method. A so-called sputtering method as a means for forming a thin film of a semiconductor device, an ion plating method or a CV method or a method which is slightly more complicated or expensive than the vapor deposition method.
Method D and the like are also applicable as appropriate.
第２図は本発明にかかる磁気エンコーダの磁気ヘッドの
一実施例を示す断面図（第３図中のII−II断面図）、第
３図は第２図に示した磁気ヘッドの平面図、第４図及び
第５図は第１工程段階で第２図に示した基板に導電層を
蒸着して形成した状態を示す側面図及び平面図、第６図
及び第７図は更に第２工程段階で絶縁層を蒸着して形成
した状態を示す側面図及び平面図、第８図及び第９図は
更に第３工程段階で磁気抵抗素子を蒸着して形成した状
態を示す側面図及び平面図、第10図は本発明にかかる磁
気エンコーダの磁気ヘッドの他の一実施例を示す断面図
（第11図中のＸ−Ｘ断面図）、第11図は第10図に示した
磁気ヘッドの平面図、第12図及び第13図は第１工程段階
で第10図に示した基板に導電層を蒸着して形成した状態
を示す側面図及び平面図、第14図は更に導電層にカッテ
ィングを施した状態を示す平面図、第15図及び第16図は
更に第２工程段階で絶縁層を蒸着して形成した状態を示
す側面図及び平面図、第17図及び第18図は更に第３工程
段階で磁気抵抗素子を蒸着して形成した状態を示す側面
図及び平面図、第19図及び第20図は更に磁気抵抗素子に
パターニングした状態を示す拡大平面図及びその電気回
路図である。FIG. 2 is a sectional view showing an embodiment of the magnetic head of the magnetic encoder according to the present invention (II-II sectional view in FIG. 3), and FIG. 3 is a plan view of the magnetic head shown in FIG. 4 and 5 are side and plan views showing a state in which a conductive layer is formed by vapor deposition on the substrate shown in FIG. 2 in the first process step, and FIGS. 6 and 7 further show the second process. FIG. 8 is a side view and a plan view showing a state in which an insulating layer is vapor-deposited in a step, and FIGS. 8 and 9 are side views and a plan view showing a state in which a magnetoresistive element is vapor-deposited in a third step. FIG. 10 is a sectional view showing another embodiment of the magnetic head of the magnetic encoder according to the present invention (X-X sectional view in FIG. 11), and FIG. 11 is a sectional view of the magnetic head shown in FIG. FIG. 12 is a plan view, FIG. 12 and FIG. 13 are side views and plan views showing a state in which the conductive layer is formed by vapor deposition on the substrate shown in FIG. 10 in the first process step. FIG. 14 is a plan view showing a state in which the conductive layer is further cut, and FIGS. 15 and 16 are side views and a plan view showing a state in which an insulating layer is further vapor-deposited in the second process step. 17 and 18 are side and plan views showing a state in which a magnetoresistive element is formed by vapor deposition in the third process step, and FIGS. 19 and 20 are enlarged views showing a state in which a magnetoresistive element is further patterned. It is a top view and its electric circuit diagram.
第２図乃至第９図中、５は基板６、導電層７、絶縁層
８、磁気抵抗素子９及び保護膜10から成る磁気ヘッドで
ある。In FIGS. 2 to 9, reference numeral 5 denotes a magnetic head including a substrate 6, a conductive layer 7, an insulating layer 8, a magnetoresistive element 9 and a protective film 10.
而して、基板６は、ガラス及びシリコンウェハ等の材料
を用いるものであり、その他方の端面（磁気抵抗素子等
が蒸着される面と対向する裏面）で図示されていない本
体に取り付けられるものである。The substrate 6 is made of a material such as glass and silicon wafer, and is attached to the main body (not shown) at the other end surface (the back surface facing the surface on which the magnetoresistive element or the like is deposited). Is.
導電層７は、銅及びアルミニウム等の良導電性材料、望
ましくはパーマロイ等の良導電性で、更に高透磁率の材
料を用いるものであり、常法により基板６の一方の端面
の全面又は四辺の周縁部を除く略全面に蒸着する（第４
〜５図）。The conductive layer 7 is made of a material having a good conductivity such as copper and aluminum, preferably a material having a good conductivity such as permalloy and a high magnetic permeability. Is vapor-deposited on substantially the entire surface except the peripheral portion (4th
(Fig. 5).
絶縁層８は、ＳｉＯ、ＳｉＯ２及びＡｌ２Ｏ３等の材料
を用い、磁気抵抗素子９のリード部９ａに対応する導電
層７のリード部７ａ及び端子部７ｂを除く導電層７上に
蒸着する（第６〜７図）。The insulating layer 8 is made of a material such as SiO, SiO 2 and Al 2 O 3 , and is vapor-deposited on the conductive layer 7 except the lead portion 7a and the terminal portion 7b of the conductive layer 7 corresponding to the lead portion 9a of the magnetoresistive element 9. (Figs. 6 to 7).
磁気抵抗素子９は、パーマロイ等の磁気抵抗効果合金、
例えば11％Ｆｅ−残部Ｎｉ又は22％Ｆｅ−残部Ｎｉ等の
材料を用い、絶縁層８の上及び端子部７ｂを除く導電層
７上、即ち導電層７のリード部７ａの上に、適宜のマス
キングを施した後、蒸着するか、パターンマスキングは
することなく、絶縁層８上及びリード部７ａ上の略全面
に蒸着した後、ダイヤモンド等の工具による数値制御ス
クライビング加工か、レーザ光線等の粒子線による数値
制御スキャンニング加工により所定パターンを形成する
もので、図示の場合の磁気抵抗素子９のパターンはＩ字
型でリード部９ａ、磁気検知部９ｂ及び端子部９ｃから
成る（第８〜９図）。The magnetoresistive element 9 is a magnetoresistive alloy such as permalloy,
For example, a material such as 11% Fe-remainder Ni or 22% Fe-remainder Ni is used, and an appropriate amount is provided on the insulating layer 8 and on the conductive layer 7 excluding the terminal portion 7b, that is, on the lead portion 7a of the conductive layer 7. After masking, vapor deposition, or without pattern masking, vapor deposition on substantially the entire surface of the insulating layer 8 and the lead portion 7a, then numerically controlled scribing with a tool such as diamond, or particles such as laser beams A predetermined pattern is formed by a numerical control scanning process using lines, and the pattern of the magnetoresistive element 9 in the illustrated case is I-shaped and includes a lead portion 9a, a magnetic detection portion 9b, and a terminal portion 9c (eighth to ninth portions). Figure).
尚、磁気抵抗素子９のマスキング蒸着又は蒸着後のパタ
ーニング加工に当り、絶縁層８上に破線で囲まれたハッ
チング部分９ｄで示した磁気抵抗素子９ｄは、目的に応
じてマスキング蒸着の際にわざわざ形成されるか、パタ
ーニング加工の際に除去する場合とがあるが、以下の実
施例外の説明に於ては、上記何れの場合であっても、図
示及び説明が省略されている。In masking vapor deposition of the magnetoresistive element 9 or patterning processing after vapor deposition, the magnetoresistive element 9d indicated by a hatched portion 9d surrounded by a broken line on the insulating layer 8 is purposely used for masking vapor deposition depending on the purpose. It may be formed or may be removed during the patterning process, but in the following description of the implementation exceptions, illustration and description are omitted in any of the above cases.
保護膜10は、上記絶縁層８と略同様なＳｉＯ等の材料を
用い、磁気抵抗素子９の端子部９ｃを除き、絶縁層８の
露出部及び磁気抵抗素子９の表面に蒸着されているもの
である（第２〜３図）。The protective film 10 is made of a material similar to that of the insulating layer 8 such as SiO, and is deposited on the exposed portion of the insulating layer 8 and the surface of the magnetoresistive element 9 except for the terminal portion 9c of the magnetoresistive element 9. (FIGS. 2-3).
前記構成の磁気ヘッド５の製造方法に就いて説明する。A method of manufacturing the magnetic head 5 having the above structure will be described.
先ず、基板６を所望の形状に成形し、平滑な面が得られ
るようにラップ仕上を施し、洗浄した後、その面に1000
〜5000Å程度の厚さに導電層７を蒸着する。First, the substrate 6 is molded into a desired shape, lapped so as to obtain a smooth surface, washed, and then 1000
The conductive layer 7 is deposited to a thickness of about 5000Å.
然る後、導電層７のリード部７ａ及び端子部７ｂを除い
た導電層７上に1000Å程度の厚さに絶縁層８を蒸着する
か或いはスパッタ等の方法で付着させ、絶縁層８の面が
0.01μ程度以下の面粗度になるようにフォトラップ仕上
を施し、再び洗浄する。After that, the insulating layer 8 is deposited on the conductive layer 7 excluding the lead portion 7a and the terminal portion 7b of the conductive layer 7 to a thickness of about 1000 Å or attached by a method such as sputtering, and the surface of the insulating layer 8 is formed. But
Photo-lap the surface to a surface roughness of less than 0.01μ and wash it again.
然る後、絶縁層８の面及び導電層７のリード部７ａ面に
所定のマスキングを施して磁気抵抗素子９を蒸着する
か、又は上記絶縁層８とリード部７ａの全面に蒸着をし
た後磁気抵抗素子のパターニング加工を施すようにし、
次いで磁気抵抗素子９の面の端子部９ｃを除く部分及び
絶縁層８の露出部に保護膜10を蒸着する。After that, the surface of the insulating layer 8 and the surface of the lead portion 7a of the conductive layer 7 are subjected to predetermined masking to deposit the magnetoresistive element 9, or after the entire surface of the insulating layer 8 and the lead portion 7a is deposited. Patterning the magnetoresistive element,
Next, a protective film 10 is vapor-deposited on the portion of the surface of the magnetoresistive element 9 excluding the terminal portion 9c and the exposed portion of the insulating layer 8.
而して、磁気ヘッド５は、図示せぬ磁気エンコーダの本
体に取り付けられ、磁気コード盤の磁気マーク記録面と
保護膜10表面側が殆ど接する状態で常時対向し、回動又
は摺動する磁気コード盤の磁気コードを順次読み取るこ
とにより磁気エンコーダが角度又は位置の検出を行なう
ものである。Thus, the magnetic head 5 is attached to the body of a magnetic encoder (not shown), and is a magnetic code that constantly opposes, rotates or slides, with the magnetic mark recording surface of the magnetic code board and the surface side of the protective film 10 almost in contact with each other. The magnetic encoder detects the angle or position by sequentially reading the magnetic codes on the board.
而して、上記本発明によれば、リード部は、導電層７の
リード部７ａ及び磁気抵抗素子９のリード部９ａの外に
導電層７の絶縁層８が形成された部分がリード部となっ
ているものであるから、之等のリード部は従来のそれに
比べて相対的に断面積を広く形成し得ることから抵抗が
低く、従ってリード部抵抗によって実効感度が低下する
欠点を防止し得るものである。Thus, according to the present invention, the lead portion is the lead portion 7a of the conductive layer 7 and the lead portion 9a of the magnetoresistive element 9, and the insulating layer 8 of the conductive layer 7 is formed outside the lead portion. Since the lead portion can be formed to have a relatively larger cross-sectional area than that of the conventional lead portion, the resistance is low, and therefore, it is possible to prevent the defect that the lead portion resistance lowers the effective sensitivity. It is a thing.
第10図乃至第20図に本発明に係る磁気エンコーダの磁気
ヘッドの他の一実施例を示す。10 to 20 show another embodiment of the magnetic head of the magnetic encoder according to the present invention.
第10図乃至第20図中、11は前記実施例の磁気ヘッド５と
同様の目的の磁気ヘッドである。而して、磁気ヘッド11
は、前記実施例と同様の基板12、導電層13、絶縁層14、
磁気抵抗素子15及び保護膜16から成る。In FIGS. 10 to 20, 11 is a magnetic head for the same purpose as the magnetic head 5 of the above-mentioned embodiment. Thus, the magnetic head 11
Is the same substrate 12, conductive layer 13, insulating layer 14, as in the above embodiment.
It is composed of a magnetoresistive element 15 and a protective film 16.
而して、磁気ヘッド11は、基板12の一方の端面の全面又
は四辺の周縁部を除く略全面に導電層13を蒸着し、その
面を図示の如く変形マの字形13Ａに所定の幅導電層13を
除去するカッティングをし、導電層13ａ及び13ｂに分割
して設け（第12〜14図）、導電層13のリード部13ｃ、13
ｄ及び13ｅ並びに端子部13ｆ及び13ｇをマスキング等に
より除き絶縁層14を蒸着し（第15〜16図）、絶縁層14並
びに導電層13のリード部13ｃ、13ｄ及び13ｅに磁気抵抗
素子15を蒸着し（第17〜18図）、その面を磁気抵抗素子
15のリード部15ａ、15ｂ及び15ｃ並びに磁気検知部15
ｄ、15ｅ、15ｆ、15ｇ、15ｈ、15ｉ、15ｊ及び15ｋ並び
に端子部15ｌ、15ｍ、15ｎ及び15ｏにパターニングし
（第19図）、更に導電層13の端子部13ｆ及び13ｇ並びに
磁気抵抗素子15の端子部15ｌ、15ｍ、15ｎ及び15ｏを除
く部分に保護膜16を蒸着してある（第10〜11図）。Thus, in the magnetic head 11, the conductive layer 13 is vapor-deposited on the entire surface of one end surface of the substrate 12 or substantially the entire surface except the peripheral portions of the four sides, and the surface of the conductive layer 13 is formed into a deformed square shape 13A with a predetermined width as shown in the figure. The layer 13 is cut so as to be divided into conductive layers 13a and 13b (FIGS. 12 to 14), and the lead portions 13c and 13 of the conductive layer 13 are cut.
d and 13e and terminal portions 13f and 13g are removed by masking or the like to deposit an insulating layer 14 (FIGS. 15 to 16), and the magnetoresistive element 15 is deposited on the insulating layer 14 and the lead portions 13c, 13d and 13e of the conductive layer 13. (Figs. 17-18), and the surface is a magnetoresistive element.
15 lead portions 15a, 15b and 15c and the magnetic sensing portion 15
d, 15e, 15f, 15g, 15h, 15i, 15j and 15k and terminal portions 15l, 15m, 15n and 15o (FIG. 19), and further, the terminal portions 13f and 13g of the conductive layer 13 and the magnetoresistive element 15 are formed. A protective film 16 is vapor-deposited on portions other than the terminal portions 151, 15m, 15n and 15o (Figs. 10 to 11).
尚、磁気ヘッド11の各部材の材料は、前記実施例と同様
であり、又前記第14図に於ける導電層13のカッティング
及び第19図に於ける磁気抵抗素子15に対するパターニン
グ加工は、ダイヤモンド工具等による数値制御スクライ
ビング加工等であっても良いが、レーザ光線等の粒子線
を利用した数値制御加工によるものが好ましく、更に必
要ならば、マスキングを施して、フォトエッチング、ケ
ミカルエッチング又はドライエッチング等をするように
するとか、或いは又マスキングを施して、導電層及び磁
気抵抗素子の蒸着をするようにすることもできる。The material of each member of the magnetic head 11 is the same as in the above embodiment, and the cutting of the conductive layer 13 in FIG. 14 and the patterning process for the magnetoresistive element 15 in FIG. 19 are diamond. It may be numerically controlled scribing with a tool, etc., but preferably numerically controlled with a particle beam such as a laser beam. If necessary, masking is performed, and photoetching, chemical etching or dry etching is performed. Etc., or masking may be performed to deposit the conductive layer and the magnetoresistive element.
第19図及び第20図は、磁気ヘッド11の内の導電層13と磁
気抵抗素子15とから成る構成及びその電気回路を示すも
のであり、以下にその回路構成に就いて説明する。FIG. 19 and FIG. 20 show the configuration of the conductive layer 13 and the magnetoresistive element 15 in the magnetic head 11 and the electric circuit thereof. The circuit configuration will be described below.
磁気ヘッド11の端子部は、導電層13の端子部13ｆ（Ｇ）
及び13ｇ（Ｂ）並びに磁気抵抗素子15の端子部15ｌ（Ａ
１）、15ｍ（Ｂ１）、15ｎ（Ａ２）及び15ｏ（Ｂ２）と
から成る。The terminal portion of the magnetic head 11 is the terminal portion 13f (G) of the conductive layer 13.
And 13 g (B) and the terminal portion 15 l (A
1 ), 15m (B 1 ), 15n (A 2 ) and 15o (B 2 ).
上記磁気抵抗素子15の端子部15ｌ（Ａ１）は磁気検知部
15ｄ（ａ２）及び15ｅ（ａ１）に導通し、又端子部15ｍ
（Ｂ１）は磁気検知部15ｆ（ｂ１）及び15ｇ（ｂ２）に
導通し、又端子部15ｎ（Ａ２）は磁気検知部15ｈ
（ａ３）及び15ｉ（ａ４）に導通し、又端子部15ｏ（Ｂ
２）は磁気検知部15ｊ（ｂ４）及び15ｋ（ｂ３）に導通
している。The terminal portion 15l (A 1 ) of the magnetoresistive element 15 is a magnetic detection portion.
Conductive to 15d (a 2 ) and 15e (a 1 ), and terminal part 15m
(B 1 ) is electrically connected to the magnetic detectors 15f (b 1 ) and 15g (b 2 ), and the terminal portion 15n (A 2 ) is magnetic detector 15h.
(A 3 ) and 15i (a 4 ) are conducted, and the terminal portion 15o (B
2 ) is electrically connected to the magnetic detectors 15j (b 4 ) and 15k (b 3 ).
更に上記磁気検知部15ｄ（ａ２）、15ｇ（ｂ２）、15ｈ
（ａ３）及び15ｋ（ｂ３）はリード部15ａ（Ｇ）に導通
し、又磁気検知部15ｅ（ａ１）及び15ｆ（ｂ１）はリー
ド部15ｂ（Ｂ）に導通し、又磁気検知部15ｉ（ａ４）及
び15ｊ（ｂ４）はリード部15ｃ（Ｂ）に導通している。Further, the magnetic detectors 15d (a 2 ), 15g (b 2 ), 15h
(A 3 ) and 15k (b 3 ) are conducted to the lead portion 15a (G), and the magnetic detection portions 15e (a 1 ) and 15f (b 1 ) are conducted to the lead portion 15b (B), and magnetic detection is performed. The parts 15i (a 4 ) and 15j (b 4 ) are electrically connected to the lead part 15c (B).
更に上記リード部15ａ（Ｇ）は導電層13のリード部13ｃ
に接触して導通し、更に導電層13ａを通じて端子部13ｆ
（Ｇ）に導通しており、又リード部15ｂ（Ｂ）及び15ｃ
（Ｂ）は導電層13のリード部13ｄ及び13ｅに接触して導
通し、更に導電層13ｂを通じて端子部13ｇ（Ｂ）に導通
している。Further, the lead portion 15a (G) is the lead portion 13c of the conductive layer 13.
To the terminal 13f through the conductive layer 13a.
Conductive to (G) and lead parts 15b (B) and 15c
(B) is in contact with the lead portions 13d and 13e of the conductive layer 13 to be conductive, and further is conductive to the terminal portion 13g (B) through the conductive layer 13b.
依って第20図に示す電気回路の如く、ホイートストンブ
リッジの並列回路、即ち２相出力ブリッジ型の磁気抵抗
素子磁気ヘッドとなり精度の高い測定ができるものであ
る。Therefore, as in the electric circuit shown in FIG. 20, it becomes a parallel circuit of Wheatstone bridge, that is, a two-phase output bridge type magnetoresistive element magnetic head, which enables highly accurate measurement.
前記構成の磁気ヘッド11の製造方法に就いて説明する。A method of manufacturing the magnetic head 11 having the above structure will be described.
先ず、基板12を所望の形状に成形し、平滑な面が得られ
るようにラップ仕上を施し、洗浄した後、その面に1000
〜5000Å程度の厚さに導電層13を蒸着し、その面をカッ
ティング幅10〜30μ程度でカッティングし導電層13ａ及
び13ｂに分割する。First, the substrate 12 is formed into a desired shape, subjected to lapping so that a smooth surface is obtained, washed, and then 1000
The conductive layer 13 is vapor-deposited to a thickness of about 5000 Å, and the surface thereof is cut with a cutting width of about 10 to 30 μ to divide it into conductive layers 13a and 13b.
然る後、導電層13のリード部13ｃ、13ｄ及び13ｅ並びに
端子部13ｆ及び13ｇを除いた導電層13上に1000Å程度の
厚さに絶縁層14を蒸着するか或いはスパッタ等の方法で
付着させ、絶縁層14の面が0.01μ程度以下の面粗度にな
るようにフォトラップ仕上げを施し、再び洗浄する。After that, the insulating layer 14 is deposited on the conductive layer 13 excluding the lead portions 13c, 13d and 13e and the terminal portions 13f and 13g of the conductive layer 13 to a thickness of about 1000Å or deposited by a method such as sputtering. The surface of the insulating layer 14 is photolapped so that the surface roughness is about 0.01 μ or less, and the surface is cleaned again.
然る後、絶縁層14の面及び導電層13のリード部13ｃ、13
ｄ及び13ｅ面に磁気抵抗素子15を蒸着し、更に磁気抵抗
素子15をリード部15ａ、15ｂ及び15ｃ並びに磁気検知部
15ｄ、15ｅ、15ｆ、15ｇ、15ｈ、15ｉ、15ｊ及び15ｋ並
びに端子部15ｌ、15ｍ、15ｎ及び15ｏにパターニング
し、然る後、導電層13の面の端子部13ｆ及び13ｇ並びに
磁気抵抗素子15の面の端子部15ｌ、15ｍ、15ｎ及び15ｏ
を除く部分並びに絶縁層14の露出部に保護膜16を蒸着し
て完成する。After that, the surface of the insulating layer 14 and the lead portions 13c, 13 of the conductive layer 13 are formed.
The magnetoresistive element 15 is vapor-deposited on the surfaces d and 13e, and the magnetoresistive element 15 is further attached to the lead portions 15a, 15b and 15c and the magnetic sensing portion.
15d, 15e, 15f, 15g, 15h, 15i, 15j and 15k and terminal portions 15l, 15m, 15n and 15o are patterned, and thereafter, the terminal portions 13f and 13g on the surface of the conductive layer 13 and the magnetoresistive element 15 are formed. Surface terminals 15l, 15m, 15n and 15o
The protective film 16 is vapor-deposited on the part except the part and the exposed part of the insulating layer 14 to complete.
本発明は叙上の如く構成されるから、本発明によるとき
は、充分な断面積があって低抵抗に形成された導電層を
リード部として用いるので磁気抵抗素子のリード部の抵
抗による実効感度の低下が防止され、且つ基板の一方の
側に、電源や信号入出力端子を集中させ得るので配線等
の作業が簡単となり、且つ磁気抵抗素子を自由にパター
ニングし得るので設計上の如何なる要求にも応じ得る新
規な磁気エンコーダの磁気ヘッドを提供し得るものであ
る。Since the present invention is configured as described above, according to the present invention, since the conductive layer having a sufficient cross-sectional area and low resistance is used as the lead portion, the effective sensitivity due to the resistance of the lead portion of the magnetoresistive element is used. Is prevented, and the power supply and signal input / output terminals can be concentrated on one side of the substrate, which simplifies the work such as wiring and allows free patterning of the magnetoresistive element to meet any design requirements. It is possible to provide a magnetic head of a novel magnetic encoder that can also comply with the above.
尚、本発明の構成は叙上の実施例に限定されるものでは
なく、各構成要素の形状、寸法等は本発明の目的の範囲
内で自由に設計変更できるものであり、本発明はそれら
の総てを包摂するものである。The configuration of the present invention is not limited to the above embodiments, and the shape, dimensions, etc. of each constituent element can be freely designed and changed within the scope of the object of the present invention, and the present invention It includes all of the above.
第１図は従来の磁気エンコーダの磁気ヘッドの分解斜視
図、 第２図は本発明にかかる磁気エンコーダの磁気ヘッドの
一実施例を示す断面図（第３図中のII−II断面図）、 第３図は第２図に示した磁気ヘッドの平面図、 第４図及び第５図は第１工程段階で第２図に示した基板
に導電層を蒸着した状態を示す側面図及び平面図、 第６図及び第７図は更に第２工程段階で絶縁層を蒸着し
た状態を示す側面図及び平面図、 第８図及び第９図は更に第３工程段階で磁気抵抗素子を
蒸着した状態を示す側面図及び平面図、 第10図は本発明にかかる磁気エンコーダの磁気ヘッドの
他の一実施例を示す断面図（第11図中のＸ−Ｘ断面
図）、 第11図は第10図に示した磁気ヘッドの平面図、 第12図及び第13図は第１工程段階で第10図に示した基板
に導電層を蒸着した状態を示す側面図及び平面図、 第14図は更に導電層にカッティングを施した状態を示す
平面図、 第15図及び第16図は更に第２工程段階で絶縁層を蒸着し
た状態を示す側面図及び平面図、 第17図及び第18図は更に第３工程段階で磁気抵抗素子を
蒸着した状態を示す側面図及び平面図、 第19図及び第20図は更に磁気抵抗素子にパターニングし
た状態を示す拡大平面図及びその電気回路図である。 １……磁気ヘッド ２……基板 ３……磁気抵抗素子 ３ａ……リード部 ３ｂ……磁気検知部 ３ｃ、３ｄ……端子部 ４……保護膜 ５……磁気ヘッド ６……基板 ７……導電層 ７ａ……リード部 ７ｂ……端子部 ８……絶縁層 ９……磁気抵抗素子 ９ａ……リード部 ９ｂ……磁気検知部 ９ｃ……端子部 10……保護膜 11……磁気ヘッド 12……基板 13……導電層 13ａ〜13ｅ……リード部 13ｆ、13ｇ……端子部 14……絶縁層 15……磁気抵抗素子 15ａ〜15ｃ……リード部 15ｄ〜15ｋ……磁気検知部 15ｌ〜15ｏ……端子部 16……保護膜FIG. 1 is an exploded perspective view of a magnetic head of a conventional magnetic encoder, and FIG. 2 is a sectional view showing an embodiment of a magnetic head of a magnetic encoder according to the present invention (II-II sectional view in FIG. 3), 3 is a plan view of the magnetic head shown in FIG. 2, and FIGS. 4 and 5 are side and plan views showing a state in which a conductive layer is deposited on the substrate shown in FIG. 2 in the first process step. 6 and 7 are side and plan views showing a state in which an insulating layer is further deposited in the second process step, and FIGS. 8 and 9 are diagrams in which a magnetoresistive element is further deposited in the third process step. FIG. 10 is a side view and a plan view showing the same, FIG. 10 is a sectional view showing another embodiment of the magnetic head of the magnetic encoder according to the present invention (XX sectional view in FIG. 11), and FIG. FIG. 12 is a plan view of the magnetic head shown in FIGS. 12 and 13 and a conductive layer is deposited on the substrate shown in FIG. 10 in the first process step. Fig. 14 is a side view and a plan view showing a state, Fig. 14 is a plan view showing a state in which the conductive layer is further cut, and Figs. 15 and 16 are side faces showing a state in which an insulating layer is further vapor-deposited in the second process step. Figures and plan views, FIGS. 17 and 18 are side views and plan views showing a state in which a magnetoresistive element is vapor-deposited in the third process step, and FIGS. 19 and 20 are states in which a magnetoresistive element is further patterned. FIG. 3 is an enlarged plan view showing an electric circuit diagram of FIG. 1 ... Magnetic head 2 ... Substrate 3 ... Magnetoresistive element 3a ... Lead section 3b ... Magnetic detection section 3c, 3d ... Terminal section 4 ... Protective film 5 ... Magnetic head 6 ... Substrate 7 ... Conductive layer 7a ... Lead section 7b ... Terminal section 8 ... Insulating layer 9 ... Magnetic resistance element 9a ... Lead section 9b ... Magnetic detection section 9c ... Terminal section 10 ... Protective film 11 ... Magnetic head 12 ...... Substrate 13 ...... Conductive layer 13a to 13e ...... Lead part 13f, 13g ...... Terminal part 14 ...... Insulating layer 15 ...... Magnetic resistance element 15a to 15c ...... Lead part 15d to 15k ...... Magnetic detection part 15l to 15o …… Terminal part 16 …… Protective film
Claims (2)
読み取る磁気ヘッドに於て、 絶縁性の基板と、該基板上に形成される薄膜状の導電層
と、上記基板の両端部分を除く上記導電層上に形成され
る薄膜状の絶縁層と、該絶縁層の形成されていない上記
基板一端部の上記導電層上と上記絶縁層上に形成される
薄膜状の磁気抵抗素子と、該磁気抵抗素子上の上記基板
他端部側の端部を除く部分に形成される薄膜状の保護膜
とから成り、上記基板一端部に於ける上記導電層と上記
磁気抵抗素子とを密着した積層状態として一体の接続関
係に形成すると共に、上記基板他端部側に於て階段状に
形成される上記導電層と上記磁気抵抗素子の各端部をコ
ード読み取り検出の端子部として成ることを特徴とする
磁気ヘッド。1. In a magnetic head for reading a code on a magnetic code board of a magnetic encoder, an insulating substrate, a thin film-like conductive layer formed on the substrate, and the conductive material excluding both end portions of the substrate. A thin film-shaped insulating layer formed on the insulating layer, a thin film magnetoresistive element formed on the conductive layer and the insulating layer at one end of the substrate where the insulating layer is not formed, and the magnetoresistive element A thin protective film formed on a portion of the element other than the end portion on the other end side of the substrate, in a laminated state in which the conductive layer and the magnetoresistive element at the one end portion of the substrate are in close contact with each other. It is characterized in that it is formed in an integral connection relationship, and that each end portion of the conductive layer and the magnetoresistive element formed stepwise on the other end side of the substrate serves as a terminal portion for code reading detection. Magnetic head.
ことを特徴とする磁気ヘッドの製造方法。 (a)絶縁性の基板を形成する工程。 (b)上記工程で形成した基板上に導電層を蒸着等の薄膜
形成手段により形成する工程。 (c)上記導電層上にその端子部及び後段の工程で形成さ
れる磁気抵抗素子のリード部を除き絶縁層を蒸着等の薄
膜形成手段により形成する工程。 (d)上記端子部を除く導電層上及び上記絶縁層上に、一
部分マスキングした後、磁気抵抗素子を蒸着等の薄膜形
成手段により形成する工程。 (e)上記磁気抵抗素子の端子部を除く磁気抵抗素子上及
び磁気抵抗素子の薄膜が形成されず露出した状態の絶縁
層上に保護膜を蒸着等の薄膜形成手段により形成する工
程。2. A method of manufacturing a magnetic head, comprising the steps described in the following items (a) to (e). (a) A step of forming an insulating substrate. (b) A step of forming a conductive layer on the substrate formed in the above step by a thin film forming means such as vapor deposition. (c) A step of forming an insulating layer on the conductive layer except a terminal portion and a lead portion of a magnetoresistive element formed in a subsequent step by a thin film forming means such as vapor deposition. (d) A step of forming a magnetoresistive element by thin film forming means such as vapor deposition after partially masking on the conductive layer excluding the terminal portion and the insulating layer. (e) A step of forming a protective film on the magnetoresistive element excluding the terminal portion of the magnetoresistive element and on the insulating layer in a state where the thin film of the magnetoresistive element is not formed and is exposed by thin film forming means such as vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59046399A JPH0652178B2 (en) | 1984-03-13 | 1984-03-13 | Magnetic head and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59046399A JPH0652178B2 (en) | 1984-03-13 | 1984-03-13 | Magnetic head and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60192211A JPS60192211A (en) | 1985-09-30 |
| JPH0652178B2 true JPH0652178B2 (en) | 1994-07-06 |
Family
ID=12746071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59046399A Expired - Lifetime JPH0652178B2 (en) | 1984-03-13 | 1984-03-13 | Magnetic head and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0652178B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2682928B2 (en) * | 1992-02-13 | 1997-11-26 | 株式会社三協精機製作所 | Magnetoresistive element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045804B2 (en) * | 1978-02-28 | 1985-10-12 | 日本電気株式会社 | angle detector |
-
1984
- 1984-03-13 JP JP59046399A patent/JPH0652178B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60192211A (en) | 1985-09-30 |
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