JPH0652269B2 - Acceleration detection device - Google Patents
Acceleration detection deviceInfo
- Publication number
- JPH0652269B2 JPH0652269B2 JP62101267A JP10126787A JPH0652269B2 JP H0652269 B2 JPH0652269 B2 JP H0652269B2 JP 62101267 A JP62101267 A JP 62101267A JP 10126787 A JP10126787 A JP 10126787A JP H0652269 B2 JPH0652269 B2 JP H0652269B2
- Authority
- JP
- Japan
- Prior art keywords
- acceleration
- resistance
- resistance element
- semiconductor substrate
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000001133 acceleration Effects 0.000 title claims description 44
- 238000001514 detection method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 description 20
- 230000035882 stress Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-BJUDXGSMSA-N lead-206 Chemical compound [206Pb] WABPQHHGFIMREM-BJUDXGSMSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
Landscapes
- Pressure Sensors (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は加速度検出装置、特に三次元座標系における加
速度を検出することができる加速度検出装置に関する。The present invention relates to an acceleration detecting device, and more particularly to an acceleration detecting device capable of detecting acceleration in a three-dimensional coordinate system.
ロボットをはじめとする運動を伴う種々の産業機器で
は、三次元座標系における加速度の検出が必要になる。
すなわち、ＸＹＺの３軸で表現される三次元座標系にお
いて、加速度の各軸方向成分を独立して検出する必要が
生じる。従来、一般に用いられている加速度検出装置
は、加速度に起因する応力歪みをストレーンゲージなど
で電気量に変換することによって検出を行っている。通
常は片持梁の構造体にストレーンゲージを貼り付け、こ
の片持梁の応力歪みによって特定の方向の加速度検出を
行うことが多い。Various industrial devices involving movement such as robots need to detect acceleration in a three-dimensional coordinate system.
That is, in the three-dimensional coordinate system represented by the three axes of XYZ, it becomes necessary to independently detect each axial component of acceleration. Conventionally, generally used acceleration detection devices perform detection by converting stress strain caused by acceleration into an electric quantity with a strain gauge or the like. Usually, a strain gauge is attached to the structure of the cantilever, and acceleration of a specific direction is often detected by the stress strain of the cantilever.
しかしながら、前述した従来の加速度検出装置には、構
造が複雑で量産性に適さないという問題点がある。たと
えば、片持梁の構造体を用いた装置では、３軸方向成分
を検出するために３組の片持梁を立体的に組合わせなけ
ればならない。したがって、量産に適さずコスト高にな
るという問題が生じるのである。また、従来装置はスト
レーンゲージなどのセンサを用いているため、測定精度
が低いという問題もある。However, the above-described conventional acceleration detection device has a problem that the structure is complicated and is not suitable for mass production. For example, in a device using a cantilever structure, three sets of cantilevers must be combined three-dimensionally in order to detect components in the three axial directions. Therefore, there is a problem that it is not suitable for mass production and the cost becomes high. Further, since the conventional device uses a sensor such as a strain gauge, there is a problem that the measurement accuracy is low.
そこで、本発明は構造が単純で量産に適し、しかも高精
度の測定を行うことができる加速度検出装置を提供する
ことを目的とする。Therefore, an object of the present invention is to provide an acceleration detecting device having a simple structure, suitable for mass production, and capable of performing highly accurate measurement.
本発明は、機械的変形によって電気抵抗が変化する抵抗
素子が少なくとも一面に形成された半導体基板に、支持
部と作用部とを有する起歪体を連接し、この作用部の支
持部に対する変位に基づいて抵抗素子に機械的変形を生
じさせるようにし、しかも起歪体の作用部にその加速度
に応じた変位を生じさせる垂錘体を連接させ加速度検出
装置を構成したものである。The present invention connects a strain element having a supporting portion and an acting portion to a semiconductor substrate having a resistance element whose electric resistance is changed by mechanical deformation on at least one surface, and displaces the acting portion with respect to the supporting portion. Based on this, the acceleration detecting device is configured such that the resistance element is mechanically deformed on the basis of the resistance element, and a hanging body that causes a displacement according to the acceleration is connected to the acting portion of the strain generating element.
本発明に用いる抵抗素子は、ピエゾ抵抗効果を有し半導
体基板の一面に形成されている。垂錘体に加速度が生じ
ると、これに応じた変位が起歪体に生じ、結局、半導体
基板上の抵抗素子に機械的変形が生じることになる。し
たがって、ピエゾ抵抗効果によりこの機械的変形に基づ
く電気抵抗の変化が起こり、垂錘体の加速度を検出する
ことができる。抵抗素子はすべて半導体基板上の一面に
形成されているため、構造は非常に簡単になり、量産に
適したものとなる。また、ピエゾ抵抗効果を有する抵抗
素子をセンサとして用いているため、測定精度も向上す
る。The resistance element used in the present invention has a piezoresistive effect and is formed on one surface of a semiconductor substrate. When acceleration is generated in the hanging body, displacement corresponding to the acceleration is generated in the strain generating body, and eventually mechanical deformation occurs in the resistance element on the semiconductor substrate. Therefore, the piezoresistive effect causes a change in the electrical resistance based on this mechanical deformation, and the acceleration of the pendulum can be detected. Since all the resistance elements are formed on one surface of the semiconductor substrate, the structure is very simple and suitable for mass production. Further, since the resistance element having the piezoresistive effect is used as the sensor, the measurement accuracy is also improved.
以下本発明を図示する実施例に基づいて説明する。 The present invention will be described below based on illustrated embodiments.
装置の構成 第１図(a)は本発明の一実施例に係る加速度検出装置の
側断面図、同図(b)は同装置の上面図である。ここで、
Ｘ軸，Ｙ軸，Ｚ軸を図の方向に定義するものとする。第
１図(a)は同図(b)に示す装置をＸ軸に沿って切断した断
面図に相当する。Device Configuration FIG. 1A is a side sectional view of an acceleration detecting device according to an embodiment of the present invention, and FIG. 1B is a top view of the device. here,
The X-axis, Y-axis, and Z-axis are defined in the directions of the figure. FIG. 1 (a) corresponds to a sectional view of the device shown in FIG. 1 (b) taken along the X-axis.
この装置において、シリコンの単結晶基板１０上には、
合計１２個の抵抗素子Ｒが形成されている。抵抗素子Rx
1〜Rx4はＸ軸上に配されＸ軸方向の加速度検出に用いら
れ、抵抗素子Ry1〜Ry4はＹ軸上に配されＹ軸方向の加速
度検出に用いられ、抵抗素子Rz1〜Rz4はＸ軸に平行でこ
の近傍にある軸上に配されＺ軸方向の加速度検出に用い
られる。各抵抗素子Ｒの具体的な構造およびその製造方
法について後に後述するが、これら抵抗素子Ｒは機械的
変形によってその電気抵抗が変化するピエゾ抵抗効果を
有する素子である。In this device, on the silicon single crystal substrate 10,
A total of 12 resistance elements R are formed. Resistance element Rx
1 to Rx 4 is used for acceleration detection in the X-axis direction is arranged on the X-axis, the resistance element Ry 1 to Ry 4 is used for acceleration detection in the Y-axis direction is arranged on the Y-axis, the resistance elements Rz 1 ~ Rz 4 is parallel to the X-axis and is arranged on an axis in the vicinity of this, and is used for acceleration detection in the Z-axis direction. Although a specific structure of each resistance element R and a method of manufacturing the resistance element R will be described later, these resistance elements R are elements having a piezoresistive effect in which the electric resistance changes due to mechanical deformation.
この単結晶基板１０は起歪体２０に接着されている。本
実施例に係る装置では、起歪体２０は円盤状のフランジ
部２１と、可撓性をもたせるために肉厚を薄くした可撓
部２２と、中心に突出した突出部２３とから構成され
る。この起歪体２０の材質としてはコバール（鉄、コバ
ルト、ニッケル合金）が用いられている。コバールはシ
リコン単結晶基板１０とほぼ同程度の熱膨張率を有する
ため、単結晶基板１０に接着されていても、温度変化に
よって生じる熱応力が極めて小さいという利点を有す
る。起歪体２０の材質、形状は、上述のものに限定され
るわけではなく、ここに示す実施例は最適な一態様にす
ぎない。なお、この起歪体２０は取付孔２４によって加
速度の測定対象物に固着される。The single crystal substrate 10 is adhered to the flexure element 20. In the device according to the present embodiment, the flexure element 20 is composed of a disk-shaped flange portion 21, a flexible portion 22 having a thin wall thickness to have flexibility, and a protruding portion 23 protruding in the center. It Kovar (iron, cobalt, nickel alloy) is used as the material of the flexure element 20. Since Kovar has a coefficient of thermal expansion almost the same as that of the silicon single crystal substrate 10, even if it is adhered to the single crystal substrate 10, there is an advantage that thermal stress caused by temperature change is extremely small. The material and shape of the flexure element 20 are not limited to those described above, and the embodiment shown here is only one optimum mode. The flexure element 20 is fixed to the object whose acceleration is to be measured by the mounting hole 24.
起歪体２０の突出部２３の先端には垂錘体３０が取付け
られている。本実施例では、この垂錘体３０は金属塊で
構成されている。この垂錘体３０の機能は、加わる加速
度に応じた応力歪みを起歪体２０に生じさせることであ
り、この機能を果たすものであればどのような材質のも
のをどのような位置に設けてもかまわない。The hanging body 30 is attached to the tip of the projecting portion 23 of the strain body 20. In the present embodiment, the weight 30 is made of a metal block. The function of the hanging body 30 is to generate a stress strain in the flexure element 20 according to the applied acceleration. What kind of material is provided at any position as long as it fulfills this function? I don't care.
起歪体２０の上部には、単結晶基板１０を保護するため
の保護カバー４０が取付けられている（第１図(b)では
図示省略）。保護カバー４０は、保護の機能を有するも
のであればどのようなものでもよく、この装置の使用態
様によっては設けなくてもかまわない。A protective cover 40 for protecting the single crystal substrate 10 is attached to the upper portion of the flexure element 20 (not shown in FIG. 1B). The protective cover 40 may be of any type as long as it has a protective function, and may not be provided depending on the usage of the device.
各抵抗素子には第２図に示すような配線がなされる。す
なわち、抵抗素子Rx1〜Rx4は第２図(a)に示すようなブ
リッジ回路に組まれ、抵抗素子Ry1〜Ry4は第２図(b)に
示すようなブリッジ回路に組まれ、抵抗素子Rz1〜Rz4は
第２図(c)に示すようなブリッジ回路に組まれる。各ブ
リッジ回路には電源５０から所定の電圧または電流が供
給され、各ブリッジ電圧は電圧計５１〜５３によって測
定される。各抵抗素子Ｒに対してこのような配線を行う
ため、第１図に示すように単結晶基板１０上で各抵抗素
子Ｒに電気的に接続されているボンディングパッド１１
と外部配線用の電極１３とが、ボンディングワイヤ１２
で接続される。電極１３は配線孔２５を通して外部に導
出されている。Wiring as shown in FIG. 2 is formed in each resistance element. That is, the resistance elements Rx 1 to Rx 4 are assembled in a bridge circuit as shown in FIG. 2 (a), and the resistance elements Ry 1 to Ry 4 are assembled in a bridge circuit as shown in FIG. 2 (b). The resistance elements Rz 1 to Rz 4 are assembled in a bridge circuit as shown in FIG. 2 (c). A predetermined voltage or current is supplied from the power supply 50 to each bridge circuit, and each bridge voltage is measured by the voltmeters 51-53. Since such wiring is performed for each resistance element R, the bonding pad 11 electrically connected to each resistance element R on the single crystal substrate 10 as shown in FIG.
And the electrode 13 for external wiring, the bonding wire 12
Connected by. The electrode 13 is led out through the wiring hole 25.
装置の基本原理 第１図(a)において、装置全体を運動させると、この運
動によって垂錘体３０に加速度がかかり、起歪体２０に
この加速度に応じた応力歪みが生じることになる。前述
のように可撓部２２は肉厚が薄く可撓性を有するため、
起歪体の中心部（以下作用部という）と周辺部（以下支
持部という）との間に変位が生じ、各抵抗素子Ｒが機械
的に変形することになる。この変形によって各抵抗素子
Ｒの電気抵抗が変化し、結局装置全体の運動加速度は第
２図に示す各ブリッジ電圧の変化として検出される。Basic Principle of Device In FIG. 1 (a), when the entire device is moved, this motion causes an acceleration to be applied to the hanging body 30, and a strain strain corresponding to this acceleration is generated in the flexure element 20. As described above, since the flexible portion 22 is thin and flexible,
Displacement occurs between the central portion (hereinafter referred to as the action portion) and the peripheral portion (hereinafter referred to as the support portion) of the flexure element, and each resistance element R is mechanically deformed. Due to this deformation, the electrical resistance of each resistance element R changes, and eventually the motion acceleration of the entire device is detected as a change in each bridge voltage shown in FIG.
第３図に、応力歪みと抵抗素子Ｒの電気抵抗の変化との
関係を示す。ここでは、説明の便宜上、単結晶基板１０
と起歪体２０の突出部２３のみを図示し、図の左から右
に４つの抵抗素子Ｒ１〜Ｒ４が形成されている場合を考
える。まず、第３図(a)に示すように、装置全体が静止
しているときは、単結晶基板１０に応力歪みは加わら
ず、すべての抵抗素子の抵抗変化は０である。ところが
下方向の加速度が加わると、垂錘体の運動によって作用
部に第３図(b)に示すような下向きの力Ｆ１がかかり、
単結晶基板１０が図のように機械的に変形することにな
る。いま、抵抗素子の導電型をＰ型とすれば、この変形
によって、抵抗素子Ｒ１およびＲ４は伸びて抵抗が増え
（＋記号で示すことにする）、抵抗素子Ｒ２およびＲ３
は縮んで抵抗が減る（−記号で示すことにする）ことに
なる。また、右方向の加速度が加わると、垂錘体の運動
によって作用部に第３図(c)に示すような右向きの力Ｆ
２がかかり、単結晶基板１０が図のように機械的に変形
することになる。この変形によって、抵抗素子Ｒ１およ
びＲ３は伸びて抵抗が増え、抵抗素子Ｒ２およびＲ４は
縮んで抵抗が減ることになる。なお、各抵抗素子Ｒは図
の横方向を長手方向とする抵抗素子であるため、図の紙
面に垂直な方向に力を加えた場合は、各抵抗素子ともに
抵抗値の変化は無視できる。このように、本装置では加
わる力の方向によって抵抗素子の抵抗変化特性が異なる
ことを利用して、各方向の加速度を独立して検出するの
である。FIG. 3 shows the relationship between the stress strain and the change in electric resistance of the resistance element R. Here, for convenience of description, the single crystal substrate 10 is used.
And only the protrusion 23 of the flexure element 20 is illustrated, and a case is considered in which four resistance elements R1 to R4 are formed from left to right in the drawing. First, as shown in FIG. 3A, when the entire device is stationary, no stress strain is applied to the single crystal substrate 10, and the resistance change of all the resistance elements is zero. However, when a downward acceleration is applied, a downward force F1 as shown in FIG.
The single crystal substrate 10 is mechanically deformed as shown in the figure. Now, assuming that the conductivity type of the resistance element is P-type, this deformation causes the resistance elements R1 and R4 to expand and increase the resistance (denoted by a + sign), and the resistance elements R2 and R3.
Will shrink and the resistance will decrease (we will show it with a minus sign). In addition, when a rightward acceleration is applied, a rightward force F as shown in FIG.
2, and the single crystal substrate 10 is mechanically deformed as shown in the figure. By this deformation, the resistance elements R1 and R3 expand and the resistance increases, and the resistance elements R2 and R4 contract and the resistance decreases. Since each resistance element R is a resistance element whose longitudinal direction is in the horizontal direction of the drawing, when a force is applied in a direction perpendicular to the paper surface of the drawing, the change in resistance value of each resistance element can be ignored. In this way, in this device, the acceleration in each direction is detected independently by utilizing the fact that the resistance change characteristics of the resistance element differ depending on the direction of the applied force.
装置の動作 以下、第４図〜第６図を参照して本装置の動作を説明す
る。第４図はＸ軸方向に加速度が生じた場合、第５図は
Ｙ軸方向に加速度が生じた場合、第５図はＺ軸方向に加
速度が生じた場合、の各抵抗素子に加わる応力（伸びる
方向を＋、縮む方向を−、変化なしを０で示す）をそれ
ぞれ示したものである。各図では、第１図に示す装置を
Ｘ軸に沿って切った断面を(a)、Ｙ軸に沿って切った断
面を(b)、そしてＸ軸に平行で素子Rz1〜Rz4に沿って切
った断面を(c)として示すことにする。Operation of the Device Hereinafter, the operation of the device will be described with reference to FIGS. 4 to 6. FIG. 4 shows the stress applied to each resistance element when acceleration is generated in the X-axis direction, FIG. 5 is the case where acceleration is generated in the Y-axis direction, and FIG. The direction of extension is +, the direction of contraction is −, and no change is indicated by 0). In each figure, a cross section taken along the X axis of the device shown in FIG. 1 is (a), a cross section taken along the Y axis (b), and elements Rz 1 to Rz 4 parallel to the X axis are shown. The section taken along the line is shown as (c).
まず、Ｘ軸方向に加速度が生じた場合、第４図(a),(b),
(c)の矢印Ｆｘ（第４図(b)では紙面に垂直な方向）で示
す方向に力が加わり、それぞれ図示する極性の応力が発
生する。この応力の極性は第３図の説明から容易に理解
できよう。各抵抗素子Ｒには、この応力に対応した抵抗
変化が生じる。たとえば、抵抗素子Rx1の抵抗は減り
（−）、抵抗素子Rx2の抵抗は増え（＋）、抵抗素子Ry1
の抵抗は変化しない（０）。また、Ｙ軸方向およびＺ軸
方向に加速度が生じた場合は、それぞれ第５図および第
６図に示すような矢印ＦｙおよびＦｚで示す方向に力が
加わり、図示するような応力が発生する。First, when acceleration occurs in the X-axis direction, as shown in FIG. 4 (a), (b),
A force is applied in a direction indicated by an arrow Fx (c) (a direction perpendicular to the paper surface in FIG. 4 (b)) in FIG. 4C, and stresses of the polarities shown in the drawing are generated. The polarity of this stress can be easily understood from the explanation of FIG. A resistance change corresponding to this stress occurs in each resistance element R. For example, the resistance of the resistance element Rx 1 decreases (-), the resistance of the resistance element Rx 2 increases (+), the resistance element Ry 1
Does not change (0). When acceleration is generated in the Y-axis direction and the Z-axis direction, forces are applied in the directions indicated by arrows Fy and Fz as shown in FIGS. 5 and 6, respectively, and the stress shown in the figure is generated.
結局、加わる力と各抵抗素子の変化の関係を表にまとめ
ると、表１のようになる。After all, the relationship between the applied force and the change of each resistance element is summarized in a table as shown in Table 1.
ここで、各抵抗素子Ｒが第２図に示すようなブリッジを
構成していることを考慮に入れると、加わる力と各電圧
計５１〜５３の変化の有無は表２のような関係になる。 Here, considering that each resistance element R constitutes a bridge as shown in FIG. 2, the relationship between the applied force and the presence or absence of change in each of the voltmeters 51 to 53 is as shown in Table 2. .
抵抗素子Rz1〜Rz4は抵抗素子Rx1〜Rx4とほぼ同じ応力変
化を受けるが、第２図に示すようにブリッジ構成が両者
異なるため、電圧計５１と５３とは異なった応答をする
点に注意されたい。結局、電圧計５１、５２、５３は、
それぞれＸ軸、Ｙ軸、Ｚ軸方向の力に応答することにな
る。なお、表２では変化の有無だけを示したが、加わる
力の方向によって変化の極性が支配され、また加わる力
の大きさによって変化量が支配されることになる。前述
のように、これらの力は垂錘体３０の加速度に応じて生
じる力であるため、結局、Ｘ軸、Ｙ軸、Ｚ軸について独
立して加速度の向きと大きさを測定することができる。 Although the resistance elements Rz 1 to Rz 4 undergo substantially the same stress change as the resistance elements Rx 1 to Rx 4 , the voltmeters 51 and 53 respond differently because the bridge configurations are different as shown in FIG. Please note that. After all, the voltmeters 51, 52, 53
It will respond to forces in the X-axis, Y-axis, and Z-axis directions, respectively. Although only the presence or absence of the change is shown in Table 2, the polarity of the change is controlled by the direction of the applied force, and the change amount is controlled by the magnitude of the applied force. As described above, since these forces are generated according to the acceleration of the weight body 30, the direction and magnitude of the acceleration can be measured independently for the X axis, the Y axis, and the Z axis. .
ピエゾ抵抗効果を有する抵抗素子の製造 以下、本発明に用いる抵抗素子の製造方法の一例を簡単
に述べる。この抵抗素子はピエゾ抵抗効果を有し、半導
体基板上に半導体プレーナプロセスによって形成される
ものである。まず、第７図(a)に示すように、Ｎ型のシ
リコン基板１０１を熱酸化し、表面に酸化シリコン層１
０２を形成する。続いて同図(b)に示すように、この酸
化シリコン層１０２を写真蝕刻法によってエッチングし
て、開口部１０３を形成する。続いて同図(c)に示すよ
うに、この開口部１０３からほう素を熱拡散し、Ｐ型拡
散領域１０４を形成する。なお、この熱拡散の工程で、
開口部１０３には酸化シリコン層１０５が形成されるこ
とになる。次に同図(d)に示すように、ＣＶＤ法によっ
窒化シリコンを堆積させ、窒化シリコン層１０６を保護
層として形成する。そして同図(e)に示すように、この
窒化シリコン層１０６および酸化シリコン層１０５に写
真蝕刻法によってコンタクトホールを開口した後、同図
(f)に示すように、アルミニウム配線層１０７を蒸着形
成する。そして最後にこのアルミニウム配線層１０７を
写真蝕刻法によってパターニングし、同図(g)に示すよ
うな構造を得る。Manufacture of Resistance Element Having Piezoresistive Effect An example of a method of manufacturing the resistance element used in the present invention will be briefly described below. This resistance element has a piezoresistive effect and is formed on a semiconductor substrate by a semiconductor planar process. First, as shown in FIG. 7A, the N-type silicon substrate 101 is thermally oxidized to form a silicon oxide layer 1 on the surface.
02 is formed. Then, as shown in FIG. 3B, the silicon oxide layer 102 is etched by photolithography to form an opening 103. Then, as shown in FIG. 3C, boron is thermally diffused from the opening 103 to form a P-type diffusion region 104. In this heat diffusion process,
A silicon oxide layer 105 is formed in the opening 103. Next, as shown in FIG. 3D, silicon nitride is deposited by the CVD method to form the silicon nitride layer 106 as a protective layer. Then, as shown in FIG. 7E, after a contact hole is opened in the silicon nitride layer 106 and the silicon oxide layer 105 by photoetching,
As shown in (f), an aluminum wiring layer 107 is formed by vapor deposition. Finally, the aluminum wiring layer 107 is patterned by photolithography to obtain a structure as shown in FIG.
なお、上述の製造工程は一例として示したものであり、
本発明は要するにピエゾ抵抗効果を有する抵抗素子であ
ればどのようなものを用いても実現可能である。The above manufacturing process is shown as an example,
The present invention can be realized by using any resistive element having a piezoresistive effect.
一体形成した実施例 上述の実施例では、半導体基板、起歪体、および垂錘体
がそれぞれ別個の部材から成り、これらを接着すること
によって全体の装置を構成していたが、これらをすべて
同一材料で一体形成することも可能である。第８図は、
シリコン単結晶から成る１チップで一体形成した実施例
の断面図である。シリコンチップ２００は図のような形
状をしており、抵抗素子が形成されている基板部２０
１、支持部２０２、作用部２０３、および垂錘部２０４
から構成されている。垂錘部２０４は結局、シリコンと
しての自重により垂錘としての働きをする。各抵抗素子
はボンディングワイヤ２０５によってリード２０６に接
続される。このシリコンチップ２００はモールド樹脂２
０７で封止され、上方には蓋板２０８が接着される。モ
ールド樹脂２０７および蓋板２０８には通気孔２０９が
設けられている。これは、密封してしまうと、温度変化
による密封圧の影響が検出結果に表われてしまうためで
ある。Example of Forming Integrally In the above-described example, the semiconductor substrate, the flexure element, and the weight body are each formed of separate members, and the entire device is configured by bonding them, but they are all the same. It is also possible to integrally form the material. Figure 8 shows
It is sectional drawing of the Example integrally formed by 1 chip which consists of a silicon single crystal. The silicon chip 200 has a shape as shown in the figure, and has a substrate portion 20 on which a resistance element is formed.
1, support portion 202, action portion 203, and hanging weight portion 204
It consists of After all, the hanging weight portion 204 functions as a hanging weight due to its own weight as silicon. Each resistance element is connected to a lead 206 by a bonding wire 205. This silicon chip 200 is molded resin 2
It is sealed with 07 and a lid plate 208 is adhered to the upper side. Vent holes 209 are provided in the mold resin 207 and the cover plate 208. This is because if sealed, the influence of the sealing pressure due to the temperature change will appear in the detection result.
なお、第８図に示すようなシリコンチップ２００を製造
するには、第７図(g)に示す状態から更に、裏面に堆積
された窒化シリコン層１０６をパターニングし、これを
マスクとしてアルカリ等のエッチング液を用いてエッチ
ングを行えばよい。In order to manufacture the silicon chip 200 as shown in FIG. 8, the silicon nitride layer 106 deposited on the back surface is further patterned from the state shown in FIG. 7 (g), and this is used as a mask to remove alkali or the like. Etching may be performed using an etching solution.
このように本発明に係る装置は、半導体基板上で面状に
形成された抵抗素子を用いるため、構造が非常に単純に
なる。また、上述のようなプロセスで製造を行うことが
できるため量産に適し、コストダウンを図ることができ
る。しかも抵抗素子は単結晶からなる素子であり、応力
に基づいた高精度の抵抗変化を得ることができるため、
高精度の測定が可能になる。As described above, the device according to the present invention uses the resistance element formed in a planar shape on the semiconductor substrate, and thus has a very simple structure. Further, since the manufacturing can be performed by the above-described process, it is suitable for mass production, and the cost can be reduced. Moreover, since the resistance element is an element made of a single crystal, a highly accurate resistance change based on stress can be obtained,
Highly accurate measurement is possible.
以上のとおり本発明によれば、機械的変形によって電気
抵抗が変化する抵抗素子を半導体基板上に形成し、この
半導体基板に起歪体を連接し、この起歪体に垂錘体を連
接して加速度に応じた応力を抵抗素子に与え、この抵抗
素子の抵抗変化によって加速度の検出を行うように加速
度検出装置を構成したため、構造が単純になり、量産に
適するようになり、しかも高精度の測定をを行うとがで
きるようになる。As described above, according to the present invention, a resistance element whose electric resistance is changed by mechanical deformation is formed on a semiconductor substrate, a strain element is connected to this semiconductor substrate, and a weight body is connected to this strain element. Since the acceleration detecting device is configured to apply a stress according to the acceleration to the resistance element and detect the acceleration by the resistance change of the resistance element, the structure is simplified, suitable for mass production, and highly accurate. You will be able to make measurements.
第１図(a)および(b)は本発明に係る加速度測定装置のそ
れぞれ側断面図および上面図、第２図は第１図に示す装
置の抵抗素子のブリッジ構成を示す回路図、第３図は第
１図に示す装置における応力歪みと抵抗素子の抵抗変化
との関係を示す原理図、第４図、第５図、第６図は、第
１図に示す装置において、それぞれＸ軸、Ｙ軸、Ｚ軸方
向に力がかかったときに発生する応力を示す図、第７図
は第１図に示す装置に用いる抵抗素子を単結晶基板上に
形成するプロセスの工程図、第８図は本発明に係わる加
速度測定装置の別な実施例の断面図である。 １０…シリコン単結晶基板、１１…ボンディングパッ
ド、１２…ボンディングワイヤ１３…電極、２０…起歪
体、２１…フランジ部、２２…可撓部、２３…突出部、
２４…取付孔、２５…配線孔、３０…垂錘体、４０…保
護カバー、５０…電源、５１〜５３…電圧計、１０１…
Ｎ型シリコン基板、１０２…酸化シリコン層、１０３…
開口部、１０４…Ｐ型拡散領域、１０５…酸化シリコン
層、１０６…窒化シリコン層、１０７…アルミニウム配
線層、Ｒ…抵抗素子、２００…シリコンチップ、２０１
…基板部、２０２…支持部、２０３…作用部、２０４…
垂錘部、２０５…ボンディングワイヤ、２０６…リー
ド、２０７…モールド樹脂、２０８…蓋板、２０９…通
気孔。1 (a) and 1 (b) are a side sectional view and a top view, respectively, of an acceleration measuring device according to the present invention, and FIG. 2 is a circuit diagram showing a bridge configuration of a resistance element of the device shown in FIG. The drawings are principle diagrams showing the relationship between stress strain and resistance change of the resistance element in the device shown in FIG. 1, FIG. 4, FIG. 5, and FIG. 6 are X-axis, respectively, in the device shown in FIG. FIG. 7 is a diagram showing a stress generated when a force is applied in the Y-axis and Z-axis directions. FIG. 7 is a process chart of a process of forming a resistance element used in the device shown in FIG. 1 on a single crystal substrate, FIG. FIG. 7 is a sectional view of another embodiment of the acceleration measuring device according to the present invention. 10 ... Silicon single crystal substrate, 11 ... Bonding pad, 12 ... Bonding wire 13 ... Electrode, 20 ... Strain element, 21 ... Flange section, 22 ... Flexible section, 23 ... Projection section,
24 ... Mounting hole, 25 ... Wiring hole, 30 ... Pendant, 40 ... Protective cover, 50 ... Power supply, 51-53 ... Voltmeter, 101 ...
N-type silicon substrate, 102 ... Silicon oxide layer, 103 ...
Openings, 104 ... P-type diffusion region, 105 ... Silicon oxide layer, 106 ... Silicon nitride layer, 107 ... Aluminum wiring layer, R ... Resistor element, 200 ... Silicon chip, 201
... substrate part, 202 ... support part, 203 ... acting part, 204 ...
Hanging weight portion, 205 ... Bonding wire, 206 ... Lead, 207 ... Mold resin, 208 ... Lid plate, 209 ... Vent hole.
Claims (3)
た薄肉構造とし、該中心部と周辺部のどちらか一方を支
持部とし、他方を作用部として形成して、機械的変形に
よって電気抵抗が変化する抵抗素子を少なくとも一面に
形成した半導体基板を上記薄肉部に対応する面に接着形
成し、更に前記作用部の先端部には垂錘体を一体に取付
けてなり、前記垂錘体に加えられた力に応じて前記作用
部が前記支持部に対して変位し、前記変位に基づいて前
記抵抗素子に機械的変形を生じさせるようにしたことを
特徴とする加速度検出装置。1. A mechanical structure in which a central portion and a peripheral portion of a flexure element have a continuous thin wall structure, one of the central portion and the peripheral portion serves as a supporting portion, and the other serves as an acting portion. A semiconductor substrate having a resistance element whose electric resistance changes due to deformation is formed on at least one surface of the semiconductor substrate by adhesion, and a hanging body is integrally attached to the tip of the acting portion. An acceleration detecting device characterized in that the acting portion is displaced with respect to the supporting portion in response to a force applied to the hanging body, and the resistance element is mechanically deformed based on the displacement. .
上に抵抗素子を半導体プレーナプロセスによって形成
し、その後、前記起歪体の作用部に接着したことを特徴
とする特許請求の範囲第１項記載の加速度検出装置。2. The semiconductor substrate according to claim 1, wherein a resistance element is formed on a silicon single crystal substrate by a semiconductor planar process, and then bonded to the acting portion of the strain generating body. The acceleration detection device according to the item.
おける加速度を検出することができ、各軸方向の加速度
を検出するためにそれぞれ少なくとも４つの抵抗素子が
設けられ、この４つの抵抗素子によってそれぞれブリッ
ジが形成されていることを特徴とする特許請求の範囲第
１項または第２項のいずれかに記載の加速度検出装置。3. Acceleration in a three-dimensional coordinate form represented by three axes of XYZ can be detected, and at least four resistance elements are provided to detect acceleration in each axis direction, and these four resistances are provided. 3. The acceleration detecting device according to claim 1, wherein each element forms a bridge.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62101267A JPH0652269B2 (en) | 1987-04-24 | 1987-04-24 | Acceleration detection device |
| EP94201910A EP0625701A1 (en) | 1987-04-24 | 1988-04-22 | Force detector using piezoresistive elements |
| EP19880903393 EP0312605A4 (en) | 1987-04-24 | 1988-04-22 | Detector for force, acceleration and magnetism using resistor element |
| US07/295,210 US4967605A (en) | 1987-04-24 | 1988-04-22 | Detector for force and acceleration using resistance element |
| PCT/JP1988/000395 WO1988008522A1 (en) | 1987-04-24 | 1988-04-22 | Detector for force, acceleration and magnetism using resistor element |
| US07/559,381 US5182515A (en) | 1987-04-24 | 1990-07-25 | Detector for magnetism using a resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62101267A JPH0652269B2 (en) | 1987-04-24 | 1987-04-24 | Acceleration detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63266358A JPS63266358A (en) | 1988-11-02 |
| JPH0652269B2 true JPH0652269B2 (en) | 1994-07-06 |
Family
ID=14296115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62101267A Expired - Lifetime JPH0652269B2 (en) | 1987-04-24 | 1987-04-24 | Acceleration detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0652269B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01136313U (en) * | 1988-02-26 | 1989-09-19 | ||
| JPH0581717U (en) * | 1992-04-14 | 1993-11-05 | 富士電気化学株式会社 | Acceleration sensor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5780532A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor load converter |
| US4373399A (en) * | 1981-02-05 | 1983-02-15 | Beloglazov Alexei V | Semiconductor strain gauge transducer |
| JPS61223626A (en) * | 1985-03-29 | 1986-10-04 | Nec Corp | Sensor |
| JPS6372536U (en) * | 1986-10-30 | 1988-05-14 | ||
| JPS63169078A (en) * | 1987-01-06 | 1988-07-13 | Nippon Denso Co Ltd | Semiconductor vibration and acceleration sensor |
-
1987
- 1987-04-24 JP JP62101267A patent/JPH0652269B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63266358A (en) | 1988-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0333872B1 (en) | Gripper for a robot | |
| US5263375A (en) | Contact detector using resistance elements and its application | |
| US5182515A (en) | Detector for magnetism using a resistance element | |
| US4967605A (en) | Detector for force and acceleration using resistance element | |
| EP0311695B1 (en) | Force and moment detector using resistor | |
| US6716253B2 (en) | Force detector | |
| US5035148A (en) | Force detector using resistance elements | |
| JP2575939B2 (en) | Semiconductor acceleration sensor | |
| JP2607096B2 (en) | Force / moment detector | |
| JP2663144B2 (en) | Robot gripper | |
| JPH0617834B2 (en) | Force detector | |
| KR102398725B1 (en) | Semiconductor full bridge strain gauge module and load cell using the same | |
| JPH0652269B2 (en) | Acceleration detection device | |
| JPS63266359A (en) | Acceleration and gradient detecting device | |
| JPH01263576A (en) | Magnetic detection apparatus | |
| Kaneta et al. | Redesigned microcantilevers for sensitivity improvement of microelectromechanical system tactile sensors | |
| JPH0821721B2 (en) | Force detection device | |
| JP2596759B2 (en) | Force detection device | |
| JPH03202778A (en) | Acceleration detector | |
| KR100829165B1 (en) | 3-axis MEMS acceleration sensor | |
| JPH07260820A (en) | Multi-axis acceleration sensor | |
| JPH0320635A (en) | Force detecting device | |
| JPH01201103A (en) | Contacting detection device | |
| JPH02228532A (en) | Force detector and application thereof | |
| JPS6312930A (en) | Force detecting element |