JPH0654539B2 - Magnetic memory - Google Patents
Magnetic memoryInfo
- Publication number
- JPH0654539B2 JPH0654539B2 JP60024757A JP2475785A JPH0654539B2 JP H0654539 B2 JPH0654539 B2 JP H0654539B2 JP 60024757 A JP60024757 A JP 60024757A JP 2475785 A JP2475785 A JP 2475785A JP H0654539 B2 JPH0654539 B2 JP H0654539B2
- Authority
- JP
- Japan
- Prior art keywords
- silicone
- magnetic
- head
- coated
- lubricating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920001296 polysiloxane Polymers 0.000 claims description 31
- 230000001681 protective effect Effects 0.000 claims description 16
- 125000000524 functional group Chemical group 0.000 claims description 13
- 239000000314 lubricant Substances 0.000 claims description 13
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001050 lubricating effect Effects 0.000 description 22
- -1 Fe 2 O 4 Chemical compound 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 229920000570 polyether Polymers 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 235000014113 dietary fatty acids Nutrition 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229930195729 fatty acid Natural products 0.000 description 6
- 239000000194 fatty acid Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000004665 fatty acids Chemical class 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910001566 austenite Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- BOSAWIQFTJIYIS-UHFFFAOYSA-N 1,1,1-trichloro-2,2,2-trifluoroethane Chemical compound FC(F)(F)C(Cl)(Cl)Cl BOSAWIQFTJIYIS-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910020705 Co—Rh Inorganic materials 0.000 description 1
- 229910020710 Co—Sm Inorganic materials 0.000 description 1
- 229910020516 Co—V Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000006367 bivalent amino carbonyl group Chemical group [H]N([*:1])C([*:2])=O 0.000 description 1
- ABDBNWQRPYOPDF-UHFFFAOYSA-N carbonofluoridic acid Chemical class OC(F)=O ABDBNWQRPYOPDF-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- FPVKHBSQESCIEP-JQCXWYLXSA-N pentostatin Chemical compound C1[C@H](O)[C@@H](CO)O[C@H]1N1C(N=CNC[C@H]2O)=C2N=C1 FPVKHBSQESCIEP-JQCXWYLXSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Lubricants (AREA)
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は磁気的記憶装置(磁気ディスク装置または磁気
ドラム装置など)に用いられる磁気記憶体およびその製
造方法に関する。The present invention relates to a magnetic memory used in a magnetic memory (such as a magnetic disk device or a magnetic drum device) and a method for manufacturing the same.
(従来技術とその問題点) 一般に記録再生磁気ヘッド(以下ヘッドと呼ぶ)と磁気
記憶体とを構成部とする磁気記憶装置の記録再生方法に
は次のような方法がある。すなわち操作開始時にヘッド
と磁気記憶体面とを接触状態でセットした後、磁気記憶
体に所要の回転を与えることによりヘッドと磁気記憶体
面との間に空気層分の空間を作り、この状態で記録再生
をする方法である(コンタクト・スタート・ストップ方
式。以下CSS方式と呼ぶ)。この方法では操作終了時
に磁気記憶体の回転が止まり、この時ヘッドと磁気記憶
体面は操作開始時と同様に接触摩擦状態にある。(Prior Art and Problems Thereof) There are the following methods for recording / reproducing in a magnetic storage device that generally includes a recording / reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body. That is, after the head and the magnetic memory surface are set in contact with each other at the start of the operation, a space corresponding to an air layer is created between the head and the magnetic memory surface by applying a required rotation to the magnetic memory, and recording is performed in this state. This is a method of reproducing (contact start / stop method; hereinafter referred to as CSS method). In this method, the rotation of the magnetic storage body is stopped at the end of the operation, and at this time, the head and the surface of the magnetic storage body are in the contact friction state as at the start of the operation.
これらの接触摩擦状態におけるヘッドと磁気記憶体の間
に生じる摩擦力は、ヘッドおよび磁気記憶体を摩耗させ
ついにはヘッドおよび磁性媒体に傷を生じせしめること
がある。また前記接触摩擦状態においてヘッドのわずか
な姿勢の変化がヘッドにかかる荷重を不均一にさせヘッ
ドおよび磁気記憶体表面に傷を作ることもある。The frictional force generated between the head and the magnetic storage body in these contact frictional states may wear the head and the magnetic storage body and eventually cause damage to the head and the magnetic medium. Further, in the contact friction state, a slight change in the posture of the head may make the load applied to the head non-uniform, and may scratch the surface of the head and the magnetic memory.
さらに長時間のヘッドと磁気記憶体とは接触により互い
に吸着し、離れにくくなる。この傷の発生及び吸着を防
ぐために従来から特開昭52-49805号公報に示される様な
以下に示す構造の側鎖パーフロロアルキルポリエーテル
又は、直鎖パーフロロアルキルポリエーテルを例とする
種々の潤滑剤が提案されてきたが、いずれもCSSによ
り除々に潤滑層が除去され多数回のCSSの繰り返しに
おいて磁気記憶体の傷の発生を防ぐことができなかっ
た。また除去された潤滑剤が接触摺動面に厚く局在し、
ヘッドとの吸着を生じるという欠点もあった。Further, the head and the magnetic memory body for a long time are contacted with each other and are attracted to each other, and are hard to separate from each other. In order to prevent the generation of scratches and adsorption, various side chain perfluoroalkyl polyethers or straight chain perfluoroalkyl polyethers having the structures shown below as shown in JP-A-52-49805 have been conventionally used. The above lubricants have been proposed, but none of them have been able to prevent the generation of scratches on the magnetic memory body by repeating the CSS many times because the lubricant layer is gradually removed by CSS. Also, the removed lubricant is thickly localized on the contact sliding surface,
There is also a drawback that it causes adsorption to the head.
(発明の目的) 本発明の目的は潤滑特性に優れかつ、ヘッド吸着が少な
くしかも磁気記憶体表面との密着性の良い(すなわちヘ
ッドの浮陽特性を悪化させない)潤滑剤を有する磁気記
憶体を提供することにある。 (Object of the Invention) An object of the present invention is to provide a magnetic memory device having a lubricant having excellent lubricating properties, less head adsorption, and good adhesion to the surface of the magnetic memory device (that is, not deteriorating the head floating characteristic). To provide.
(発明の構成) 上記目的を達成するために、本発明は、下地体の上に磁
性媒体が被覆し、更に、前記磁性媒体の上に直接又は保
護膜を介してパーフロロアルキルポリマー構造を分子鎖
中に含むシリコーンもしくは前記シリコーンと潤滑剤の
混合物を被覆してなる構造を有するようにしたものであ
る。(Structure of the Invention) In order to achieve the above-mentioned object, the present invention provides that a magnetic medium is coated on an underlayer, and a perfluoroalkyl polymer structure is molecularly formed on the magnetic medium directly or through a protective film. It has a structure formed by coating the silicone contained in the chain or the mixture of the silicone and the lubricant.
また、上記目的を達成するために、本発明は、下地体の
上に磁性媒体が被覆し、更に、前記磁性媒体の上に直接
又は保護膜を介してパーフロロアルキルポリマー構造と
シリコーン鎖が2価官能基で結ばれてなるシリコーンも
しくは前記シリコーンと潤滑剤の混合物を被覆してなる
構造を有するようにしたものである。In order to achieve the above-mentioned object, the present invention provides that a magnetic medium is coated on a base material, and further, a perfluoroalkyl polymer structure and a silicone chain are formed on the magnetic medium directly or through a protective film. It has a structure formed by coating a silicone bound with a divalent functional group or a mixture of the silicone and a lubricant.
(作 用) 次に図面を参照して本発明を詳細に説明する。第1図は
本発明の磁気記憶体の部分断面図で、下地体1はアルミ
合金又は、陽極酸化アルマイト、Ni−Pメッキ膜、Cr,
FeNi,Mo またはW等を被覆のアルミ合金、又はポリエス
テル、ポリイミド、ポリアミドイミド,ポリサルフォ
ン,芳香族ポリエーテルなどのプラスチック、又はCr,F
e Ni,Mo,W などの金属、又はガラス板である。次にこの
下地体1の上に磁性媒体2としてFe2O4,γ−Fe2O3 な
どの鉄酸化物又はCo-Ni,Co-Ni-P,Co-Mn-P,Co-Ni-Mn-P,C
o-Re,Co-Mn-Re-P,Co-Cr,Co-V,Co-Pt,Co-Ni-Pt,Co-Pt-C
r,Co-Pt-V,Co-Rh,Co-Ni-Mo又はCo-Smなどの金属又は合
金を被覆する。さらに該磁性媒体2の上にパーフロロア
ルキルポリマー構造を分子鎖中に1つ以上含むシリコー
ンもしくは該シリコーンと潤滑剤の混合物またはパーフ
ロロアルキルポリマーとシリコーン鎖が2価官能基で結
ばれてなるシリコーンもしくは前記シリコーンと潤滑剤
の混合物からなる潤滑層4が被覆されている。(Operation) Next, the present invention will be described in detail with reference to the drawings. FIG. 1 is a partial cross-sectional view of a magnetic memory body of the present invention. The base body 1 is made of aluminum alloy or anodized alumite, Ni-P plated film, Cr,
Aluminum alloy coated with FeNi, Mo or W, or plastic such as polyester, polyimide, polyamide-imide, polysulfone, aromatic polyether, or Cr, F
e Metal such as Ni, Mo, W, or glass plate. Next, iron oxide such as Fe 2 O 4 , γ-Fe 2 O 3 or Co-Ni, Co-Ni-P, Co-Mn-P, Co-Ni- is used as the magnetic medium 2 on the underlayer 1. Mn-P, C
o-Re, Co-Mn-Re-P, Co-Cr, Co-V, Co-Pt, Co-Ni-Pt, Co-Pt-C
Coating with a metal or alloy such as r, Co-Pt-V, Co-Rh, Co-Ni-Mo or Co-Sm. Further, a silicone containing one or more perfluoroalkyl polymer structures in the molecular chain on the magnetic medium 2 or a mixture of the silicone and a lubricant, or a silicone in which the perfluoroalkyl polymer and the silicone chain are bound by a divalent functional group. Alternatively, it is covered with a lubricating layer 4 made of a mixture of the silicone and the lubricant.
本発明で用いられるパーフロロアルキルポリマー構造を
分子鎖中に1つ以上含むシリコーンの例としては次式の
様な構造の化合物がある。Examples of the silicone containing one or more perfluoroalkyl polymer structure used in the present invention in the molecular chain include compounds having a structure represented by the following formula.
ただしRf,Rf *はClx2l+1(lは1以上の整数、Xは
H,F,Cl,Br,I)m,m′又はnは1以上の整数 Rf′はふっ素化炭化水素で−Ch(ChF2k+1)2h−
(hは1以上の整数,kは0又は1以上の整数であ
る。) m又はnは1以上の整数 RR*はCiX2i+1(iは1以上の整数、XはH又はF又
はCl,Br,I)Jは−O−,−S−, NHCO−,−NHCOO−,−NH−, 又などの2価官能基又はその異種同士の組み合わせであ
る。 Where R f and R f * are Clx 2l + 1 (l is an integer of 1 or more, X is H, F, Cl, Br, I) m, m ′ or n is an integer of 1 or more R f ′ is a fluorinated carbon. hydrogen -C h (C h F 2k + 1) 2h-
(H is an integer of 1 or more, k is 0 or an integer of 1 or more.) M or n is an integer of 1 or more RR * is C i X 2i + 1 (i is an integer of 1 or more, X is H or F) Or Cl, Br, I) J is -O-, -S-, NHCO-, -NHCOO-, -NH-, Further, it is a divalent functional group such as or a combination of different kinds thereof.
本発明で用いられるパーフロロアルキルポリマーとシリ
コーン鎖が2価官能基で結ばれてなるシリコーンの例と
しては次式の様な構造が有る。An example of the silicone in which the perfluoroalkyl polymer used in the present invention and the silicone chain are bound by a divalent functional group has a structure represented by the following formula.
各記号は,式で表わしたものと同様である。J″は
J又はJ′と同様の2価官能基である。 Each symbol is the same as that expressed by the formula. J ″ is a divalent functional group similar to J or J ′.
J′はJと同種の2価官能基を除く前記2価官能基であ
る。J'is the above-mentioned divalent functional group excluding the same divalent functional group as J.
また〜式の中に官能基を含んでいても良い。Also, a functional group may be included in the formula.
有効な官能基は −NCO,−SH,−SO3H,−SO3M(MはN
a,K,Li), (jは1以上の整数)、−CiH2iOH(iは0又は
1以上の整数)、NH2,−CH2=CH2,−Si
(ChH2 h+1)gX3−g(hは1以上の整数、gは
0,1又は2、XはCl又は−OH又はOCfH2f+1(f
は1以上の整数))、または −A−Si(ChH2 h+1)gX3=g (h,g,Xは上記と同様。又AはC,H,N,O,S
の1つ以上の元素からなる有機物)である。Valid functional groups -NCO, -SH, -SO 3 H, -SO 3 M (M is N
a, K, Li), (J is an integer of 1 or more), - CiH 2 iOH (i is 0 or an integer of 1 or more), NH 2, -CH 2 = CH 2, -Si
(ChH 2 h + 1 ) gX 3 −g (h is an integer of 1 or more, g is 0, 1 or 2, X is Cl or —OH or OC f H 2f + 1 (f
As with the integer of 1 or more)), or -A-Si (ChH 2 h + 1) gX 3 = g (h, g, X is described above. The A is C, H, N, O, S
Of one or more elements).
例えば などである。For example And so on.
上記一般式中官能基Gは磁性媒体2又は、第2図に示す
ような磁性媒体2上に形成された保護膜3の上に強固に
反応して固着するため、ヘッドの摺動によって除去され
ない。Since the functional group G in the above general formula reacts strongly and adheres to the magnetic medium 2 or the protective film 3 formed on the magnetic medium 2 as shown in FIG. 2, it is not removed by the sliding of the head. .
この効果は官能基の中でも−Si(ChH2h+1)gX3-g(h
は1以上の整数、gは0、1又は2、XはCl又は−OH
又はOCfH2f+1(fは1以上の整数))で表わされる
シランが最も効果が有る。Among the functional groups, this effect is --Si (ChH 2h + 1 ) gX 3-g (h
Is an integer of 1 or more, g is 0, 1 or 2, X is Cl or -OH
Alternatively, silane represented by OC f H 2f + 1 (f is an integer of 1 or more) is most effective.
この様な強い固着能と底表面エネルギーの為にヘッドと
の摺動に対し傷を防止する潤滑性の持続効果とヘッド・
ディスク間への潤滑層の集積を防止し、ヘッドとディス
クの吸着を防止する効果の2つの効果が同時に得られ
る。また上記シリコーンの粘度は分子鎖長および官能基
の種類により10〜1000000cstまで変化させることが出来
る。Due to such strong fixing ability and bottom surface energy, the effect of sustaining the lubricity that prevents scratches against sliding with the head and the head
Two effects, that is, an effect of preventing accumulation of the lubricating layer between the disks and an attraction of the head and the disk, can be obtained at the same time. The viscosity of the silicone can be changed from 10 to 100,000 cst depending on the molecular chain length and the type of functional group.
〜式に示された前記シリコンと混合する潤滑剤の一
例としては や−(−CF2CF2−O−)−(−CF2−O−)−か
らなるパーフロロアルキルポリエーテル、ポリテトラフ
ロロエチレン、ポリテトラフロロエチレンテロマー、パ
ーフロロカルボン酸、パーフロロアルコール、パーフロ
ロカルボン酸エステル、パーフロロアルコールの脂肪酸
エステル、パーフロロアルキルアルコキシシラン、フロ
ロシリコーン、パーフロロアルキルスルホン酸、パーフ
ロロアルキルスルホン酸アンモニウム、脂肪族アルキル
アルコキシシラン、高級脂肪酸、高級脂肪酸アルコー
ル、高級脂肪酸エステル、高級脂肪酸アミド脂肪アミ
ン、不飽和高級脂肪酸、長鎖脂肪族炭化水素、ポリアル
キレングリコール,シリコーンオイル,ポリオキシェチ
レン,ネオペンチルポリオールエステル,ポリフェニル
エーテルなどがある。~ As an example of the lubricant mixed with the silicon represented by the formula, And - (- CF 2 CF 2 -O -) - (- CF 2 -O -) - perfluoroalkyl polyether consisting of polytetrafluoroethylene, polytetrafluoroethylene telomer perfluoro carboxylic acids, perfluoroalkyl alcohol, Perfluorocarboxylic acid ester, fatty acid ester of perfluoroalcohol, perfluoroalkylalkoxysilane, fluorosilicone, perfluoroalkylsulfonic acid, ammonium perfluoroalkylsulfonate, aliphatic alkylalkoxysilane, higher fatty acid, higher fatty acid alcohol, higher fatty acid Ester, higher fatty acid amide fatty amine, unsaturated higher fatty acid, long chain aliphatic hydrocarbon, polyalkylene glycol, silicone oil, polyoxyethylene, neopentyl polyol ester, polyphenyl ether, etc.
第2図は、本発明の別の磁気記憶体の部分断面図であ
る。第2図において、下地体1、および磁性媒体2、潤
滑層4は第1図と同じであるが磁性媒体2と前記潤滑層
4の間に保護膜が被覆されている。該保護膜3はSiO2,S
i3N4,SiC又はケイ酸重合物などのケイ素化合物またはCo
O,Co3O4,Co2O3,α−Fe2O3,Cr2O3,CrO3,TiO2,又はZrO2
などの金属酸化物またはTiN,ZrN,CrN又はTaN などの金
属窒化物またはTiC,ZrC,CrC又はTaCなどの金属炭化物ま
たはW,Cr,Ir,NiP,Ru,Rh,Mn,Mo,OsまたはTa 又はそれら
の合金などの金属又は合金が用いられる。FIG. 2 is a partial sectional view of another magnetic memory body of the present invention. In FIG. 2, the base 1, the magnetic medium 2 and the lubricating layer 4 are the same as those in FIG. 1, but a protective film is coated between the magnetic medium 2 and the lubricating layer 4. The protective film 3 is made of SiO 2 , S
Silicon compounds such as i 3 N 4 , SiC or silicic acid polymer or Co
O, Co 3 O 4 , Co 2 O 3 , α−Fe 2 O 3 , Cr 2 O 3 , CrO 3 , TiO 2 , or ZrO 2
Or metal oxide such as TiN, ZrN, CrN or TaN or metal carbide such as TiC, ZrC, CrC or TaC or W, Cr, Ir, NiP, Ru, Rh, Mn, Mo, Os or Ta Alternatively, a metal or alloy such as an alloy thereof is used.
いずれも前記潤滑剤4と良く反応し、強固に該潤滑層4
を保持することが出来る。特にニッケル酸化物またはコ
バルト酸化物またはSiO2はその効果が著るしい。Both of them react well with the lubricant 4 and firmly adhere to the lubricant layer 4
Can hold. Particularly, nickel oxide, cobalt oxide, or SiO 2 has a remarkable effect.
なお前記潤滑層4を被覆後、100〜300℃で焼成し
ても良い。After coating the lubricating layer 4, it may be baked at 100 to 300 ° C.
次に実施例により本発明を詳細に説明する。Next, the present invention will be described in detail with reference to examples.
実施例1 ニッケル−燐めっき膜が被覆され表面租さ0.02μmに鏡
面仕上げされた下地体1の上に磁性媒体2としてコバル
ト−ニッケル−燐合金を0.05μmの厚さにめっきした。
次にこの磁性媒体2の上に保護膜3として特開昭52-208
04号公報に示された様なポリ珪酸(珪酸重合物)を回転
塗布法により被覆する。次にこの保護膜3の上に潤滑層
4として下記に示すシリコーン ここでm=10,n=10である。Example 1 A cobalt-nickel-phosphorus alloy as a magnetic medium 2 was plated to a thickness of 0.05 .mu.m on a base body 1 which was coated with a nickel-phosphorus plating film and had a surface finish of 0.02 .mu.m and mirror-finished.
Next, a protective film 3 is formed on the magnetic medium 2 as a protective film 3 of JP-A-52-208.
The polysilicic acid (silicic acid polymer) as shown in Japanese Patent Publication No. 04 is coated by a spin coating method. Next, a silicone shown below as a lubricating layer 4 is formed on the protective film 3. Here, m = 10 and n = 10.
の0.1重量%トリフロロトリクロルエタン(以下フレオ
ンと称する)溶液を回転塗布法により被覆して、磁気デ
ィスクを作った。この磁気ディスクを後述の評価法によ
り評価したところ、優れた耐久性を有することが確認さ
れた。Was coated with a 0.1 wt% trifluorotrichloroethane (hereinafter referred to as Freon) solution by a spin coating method to prepare a magnetic disk. When this magnetic disk was evaluated by the evaluation method described below, it was confirmed that it had excellent durability.
実施例2 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 2 A magnetic disk was prepared in the same manner as in Example 1 except that the lubricating layer 4 was made of silicone having the following structure.
ここでm=10,n=10である。 Here, m = 10 and n = 10.
実施例3 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 3 A magnetic disk was prepared in the same manner as in Example 1 except that the lubricating layer 4 was made of silicone having the following structure.
ここでm=10,n=20である。 Here, m = 10 and n = 20.
実施例4 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 4 A magnetic disk was prepared in the same manner as in Example 1 except that the lubricating layer 4 was made of silicone having the following structure.
ここでm=10,n=50である。 Here, m = 10 and n = 50.
実施例5 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 5 A magnetic disk was manufactured in the same manner as in Example 1 except that silicone having the following structure was used as the lubricating layer 4.
ここでm=10,n=20である。 Here, m = 10 and n = 20.
実施例6 実施例1と同様にして但し潤滑層4として保護膜3とし
てNiPを500Åめっきし、後280℃で焼成して表面にNiOを
形成させて磁気ディスクを作った。Example 6 A magnetic disk was prepared in the same manner as in Example 1, except that 500 L of NiP was plated as the protective film 3 as the lubricating layer 4 and then baked at 280 ° C. to form NiO on the surface.
実施例7 実施例3と同様にして但し保護膜3としてSiO2を200Å
スパッタリングにより被覆して磁気ディスクを作った。Example 7 Same as Example 3, except that SiO 2 is 200Å as the protective film 3.
A magnetic disk was prepared by coating by sputtering.
実施例8 実施例1と同様にして但し磁性媒体2としてCoCr 合金
をスパッタリング法により被覆しその上に潤滑層4とし
て実施例7と同様の潤滑層を被覆して磁気ディスクを作
った。Example 8 A magnetic disk was prepared in the same manner as in Example 1, except that a CoCr alloy was coated as the magnetic medium 2 by the sputtering method and a lubricating layer similar to that in Example 7 was coated thereon as the lubricating layer 4.
実施例9 実施例16と同様にして但し磁性媒体2としてγ−Fe2O3
をスパッタリング法により被覆して磁気ディスクを作っ
た。Example 9 Same as Example 16 except that γ-Fe 2 O 3 was used as the magnetic medium 2.
Was coated by a sputtering method to prepare a magnetic disk.
実施例10 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 10 A magnetic disk was manufactured in the same manner as in Example 1 except that silicone having the following structure was used as the lubricating layer 4.
ここでmは15である。 Here, m is 15.
実施例11 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 11 A magnetic disk was prepared in the same manner as in Example 1 except that silicone having the following structure was used as the lubricating layer 4.
ここでmは10 実施例12 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。 Here, m is 10 Example 12 A magnetic disk was manufactured in the same manner as in Example 1 except that silicone having the following structure was used as the lubricating layer 4.
ここでmは5である。 Here, m is 5.
実施例13 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。Example 13 A magnetic disk was prepared in the same manner as in Example 1 except that the lubricating layer 4 was made of silicone having the following structure.
実施例14 実施例1と同様にして但し潤滑層4として下記の構造の
シリコーンを用いて磁気ディスクを作った。 Example 14 A magnetic disk was manufactured in the same manner as in Example 1 except that the lubricating layer 4 was made of silicone having the following structure.
比較例1 実施例と同様にして但し保護膜3の上に潤滑層4として
下記の構造を有するパーフロロアルキルポリエーテルを
被覆して磁気ディスクを作った。 Comparative Example 1 A magnetic disk was prepared in the same manner as in Example 1 except that the protective film 3 was coated with perfluoroalkylpolyether having the following structure as the lubricating layer 4.
n=30〜50 比較例2 実施例1と同様にして但し保護膜3の上に潤滑層4とし
て下記の構造を有するパーフロロアルキルポリエーテル
を被覆して磁気ディスクを作った。 n = 30 to 50 Comparative Example 2 A magnetic disk was prepared in the same manner as in Example 1, except that the protective film 3 was coated with perfluoroalkyl polyether having the following structure as the lubricating layer 4.
F3CC2F4OmCF2−OnCF3 m=n=20〜30 実施例11〜14及び比較例1,2で示した磁気ディスクを
用いて荷重150gのAl2O3・TiC 製コアを有するヘッドス
ライダを用いて多数回のコンタクト・スタート・ストッ
プ(CSS)の繰り返し摩耗試験と、ヘッド吸着の始ま
る臨界膜厚を測定したところ次表の結果を得た。 F 3 CC 2 F 4 O m CF 2 -O n CF 3 m = n = 20~30 Al 2 O 3 · TiC load 150g by using the magnetic disk shown in Examples 11-14 and Comparative Examples 1 and 2 Using a head slider having a core made of a material, a contact wear stop (CSS) repeated wear test was repeated many times, and the critical film thickness at which head adsorption started was measured. The results shown in the following table were obtained.
上表の結果より比較例1,2のパーフロロアルキルポリ
エーテルに比べ実施例1〜14のシリコーンの耐久性が格
段に向上することが分った。 From the results in the above table, it was found that the durability of the silicones of Examples 1 to 14 was remarkably improved as compared with the perfluoroalkyl polyethers of Comparative Examples 1 and 2.
実施例8,9は保護膜を有しない為、他の実施例より耐
久性は悪いが、比較例よりは優れた耐久性を有している
また臨界膜厚についても比較例1,2のパーフロロアル
キルポリエーテルは極くわずかの膜厚でもヘッド吸着が
始まるが、実施例1〜14のシリコーンは50〜120Åとよ
り厚い膜厚までヘッド吸着を生じず、大きなマージンを
有していることが分った。Since Examples 8 and 9 have no protective film, they have poorer durability than the other Examples, but they have better durability than the Comparative Examples, and the critical film thickness of the Comparative Examples Fluoroalkyl polyether starts head adsorption even with a very small film thickness, but the silicones of Examples 1 to 14 do not cause head adsorption up to a larger film thickness of 50 to 120Å, and have a large margin. I understand.
(発明の効果) 以上の様に本発明の磁気記憶体は耐久性に優れまたヘッ
ド吸着を生じにくく、磁気ディスク装置の信頼性を飛躍
的に向上出来ることが分った。(Effects of the Invention) As described above, it has been found that the magnetic memory body of the present invention is excellent in durability, is less likely to cause head adsorption, and can dramatically improve the reliability of the magnetic disk device.
なお本発明の実施例では磁気ディスクについて述べたが
フロッピーディスク、磁気テープ、磁気カードにも本発
明が有効であることは明らかである。Although the magnetic disk is described in the embodiments of the present invention, it is obvious that the present invention is also effective for a floppy disk, a magnetic tape, and a magnetic card.
第1図及び第2図は本発明を示す部分断面図である。 1……下地体、2……磁性媒体、3……保護膜、4……
潤滑層である。1 and 2 are partial sectional views showing the present invention. 1 ... Substrate, 2 ... Magnetic medium, 3 ... Protective film, 4 ...
It is a lubricating layer.
Claims (2)
前記磁性媒体の上に直接又は保護膜を介してパーフロロ
アルキルポリマー構造を分子鎖中に含むシリコーンもし
くは前記シリコーンと潤滑剤の混合物が被覆されてなる
構造を有すること特徴とする磁気記憶体。1. A magnetic medium is coated on a substrate, and further,
A magnetic memory having a structure in which a silicone containing a perfluoroalkyl polymer structure in the molecular chain or a mixture of the silicone and a lubricant is coated on the magnetic medium directly or through a protective film.
前記磁性媒体の上に直接又は保護膜を介してパーフロロ
アルキルポリマー構造とシリコーン鎖が2価官能基で結
ばれてなるシリコーンもしくは前記シリコーンと潤滑剤
の混合物が被覆されてなる構造を有することを特徴とす
る磁気記憶体。2. A magnetic medium is coated on the underlayer, and further,
The magnetic medium has a structure in which a perfluoroalkyl polymer structure and a silicone chain bonded to a silicone chain with a divalent functional group or a mixture of the silicone and a lubricant is coated directly or through a protective film. Characteristic magnetic memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60024757A JPH0654539B2 (en) | 1985-02-12 | 1985-02-12 | Magnetic memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60024757A JPH0654539B2 (en) | 1985-02-12 | 1985-02-12 | Magnetic memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61184720A JPS61184720A (en) | 1986-08-18 |
| JPH0654539B2 true JPH0654539B2 (en) | 1994-07-20 |
Family
ID=12147016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60024757A Expired - Lifetime JPH0654539B2 (en) | 1985-02-12 | 1985-02-12 | Magnetic memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0654539B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5930243A (en) * | 1982-08-12 | 1984-02-17 | Hitachi Condenser Co Ltd | Magnetic recording medium |
| JPS59203239A (en) * | 1983-05-04 | 1984-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Production of magnetic disc |
-
1985
- 1985-02-12 JP JP60024757A patent/JPH0654539B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61184720A (en) | 1986-08-18 |
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