JPH0656913B2 - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JPH0656913B2 JPH0656913B2 JP19177788A JP19177788A JPH0656913B2 JP H0656913 B2 JPH0656913 B2 JP H0656913B2 JP 19177788 A JP19177788 A JP 19177788A JP 19177788 A JP19177788 A JP 19177788A JP H0656913 B2 JPH0656913 B2 JP H0656913B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- circuit board
- glass
- sio
- bao
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は金属基体上にほうろう層を被覆してなる回路基
板、特にその基板上に厚膜印刷法にて、微細配線パター
ンを施した基板を提供できる回路基板に関する。Description: FIELD OF THE INVENTION The present invention provides a circuit board having a metal substrate coated with an enamel layer, and particularly a substrate having a fine wiring pattern formed on the substrate by a thick film printing method. A circuit board that can be used.
従来の技術 従来、厚膜ハイブリッドICやプリント基板には、アル
ミナ基板やガラスエポキシ基板が用いられていた。アル
ミナ基板の欠点は機械的強度が弱く、かつ大型の基板の
製造が困難である。他方、ガラスエポキシ基板は、安価
で大量生産に向いているが、耐熱性が悪く、回路形成に
用いられる材料(厚膜ペーストは焼成温度が800〜9
00℃の材料が多い)が低温用に限られていること、製
品の使用環境が400℃以下という制限があった。2. Description of the Related Art Conventionally, alumina substrates and glass epoxy substrates have been used for thick film hybrid ICs and printed circuit boards. The disadvantage of the alumina substrate is that it has low mechanical strength and it is difficult to manufacture a large substrate. On the other hand, the glass epoxy substrate is inexpensive and suitable for mass production, but has poor heat resistance and is a material used for circuit formation (a thick film paste has a firing temperature of 800 to 9).
However, there are restrictions that the use environment of the product is 400 ° C or less.
これらの問題点を解決する方法として、金属基材にガラ
ス質層を被覆した、いわゆるほうろう基板が提案され
た。まず第一の提案は、アルカリ金属酸化物(Na
2O,K2,Li2O)の量が比較的少ない非晶質ガラス
を被覆した基板である。このタイプの基板の欠点は(a)
繰り返し焼成すると、ほうろう層が再軟化すること、
(b)アルミナ基板に比べて、高温時の電気絶縁性に劣る
こと、(c)高温中で長時間、電圧を印加すると、アルカ
リイオンのマイグレーションによって、回路網に悪影響
を及ぼす、(d)ペースト焼成時の凝集力によって、印刷
回路の寸法が焼成前後において収縮することなど;絶縁
層の再軟化性、電気絶縁性、信頼性、回路の精度に問題
があった。As a method for solving these problems, a so-called enamel substrate in which a glass substrate is coated on a metal substrate has been proposed. The first proposal is the alkali metal oxide (Na
It is a substrate coated with amorphous glass having a relatively small amount of 2 O, K 2 , Li 2 O). The disadvantages of this type of board are (a)
When repeatedly fired, the enamel layer re-softens,
(b) Inferior in electrical insulation at high temperature compared to alumina substrate, (c) When voltage is applied for a long time at high temperature, migration of alkali ions adversely affects the network, (d) paste The size of the printed circuit shrinks before and after firing due to the cohesive force during firing. There are problems with resoftening of the insulating layer, electrical insulation, reliability, and circuit accuracy.
これに対し、第二の提案は結晶化ガラスをほうろう層と
するという試みである。例えば、特開昭56-73643号公報
に開示されているように、6〜25モル%のBaO、3
0〜60モル%の金属酸化物(MgO,ZnO,CaO
の群から選ばれる1または2以上の混合物)、13〜3
5モル%のB2O3、10〜25モル%のSiO2の組成
からなる結晶化ガラスを鋼板上に被覆したほうろう基板
は800〜900℃でペーストを印刷し繰り返し焼成し
ても、ほうろう層の再軟化が起こらず、また無アルカリ
ガラスであるため、電気絶縁性、信頼性に優れており、
第1の提案を完全に超えるものであった。On the other hand, the second proposal is an attempt to use crystallized glass as the enamel layer. For example, as disclosed in JP-A-56-73643, 6 to 25 mol% of BaO, 3
0-60 mol% of metal oxides (MgO, ZnO, CaO
1 or 2 or more mixtures selected from the group
A enamel substrate in which a crystallized glass having a composition of 5 mol% B 2 O 3 and 10 to 25 mol% SiO 2 is coated on a steel plate is a enamel layer even if paste is printed at 800 to 900 ° C. and repeatedly fired. Since it does not re-soften, and it is an alkali-free glass, it has excellent electrical insulation and reliability.
It completely exceeded the first proposal.
なお、第2の提案のモル%で表わされた範囲を実施例を
参照して重量%で表わすと、BaO=16〜50%,M
gO=16〜42%,CaO=0〜11%,ZnO=0
〜11%,CaO+ZnO=0〜11%,B2O3=12
〜34%,SiO2=10〜23%,ZrO2=0〜5
%,Al2O3=0〜5%,SnO2=0〜5%,ZrO2
+Al2O3+SnO2=0〜5%である。以下、本明細
書は重量%で統一する。When the range expressed in mol% of the second proposal is expressed in weight% with reference to the examples, BaO = 16 to 50%, M
gO = 16 to 42%, CaO = 0 to 11%, ZnO = 0
~11%, CaO + ZnO = 0~11 %, B 2 O 3 = 12
~34%, SiO 2 = 10~23% , ZrO 2 = 0~5
%, Al 2 O 3 = 0 to 5%, SnO 2 = 0 to 5%, ZrO 2
+ Al 2 O 3 + SnO 2 = 0 to 5%. Hereinafter, the present specification is unified by weight%.
発明が解決しようとする課題 第2の提案の問題点としては、(a)耐熱性に劣る、(b)耐
酸性が悪い、(c)表面粗度が大きく、微細配線用基板と
しては不適である、などがあげられる。Problems to be Solved by the Invention The problems of the second proposal are (a) poor heat resistance, (b) poor acid resistance, (c) large surface roughness, and unsuitable as a fine wiring substrate. There is, and so on.
これらの欠点(a)、(b)については、特開昭58-104042号
公報及び特開昭60-172102号公報に開示してあるよう
な、ガラス組成で改善しようとする試みもなされている
が、未だ実用には供されていない。その理由は、第2の
提案よりも極端に表面粗度が大きくなり、厚膜印刷用回
路基板としては使用できなかったからである。というの
は、このようなMgO−BaO−B2O3−SiO2系の
ガラスは800〜900℃で焼成すると、BaO・2M
gO・2SiO2,2MgO・B2O3の結晶相が析出
し、結晶粒が肥大化するために、基板の表面粗度が大き
くなるためである。第2図はその様子を示したものであ
る。Regarding these drawbacks (a) and (b), attempts have been made to improve the glass composition as disclosed in JP-A-58-104042 and JP-A-60-172102. However, it has not been put to practical use yet. The reason is that the surface roughness becomes extremely larger than that of the second proposal and it cannot be used as a circuit board for thick film printing. Because, when such MgO-BaO-B 2 O 3 -SiO 2 system glass is fired at 800 to 900 ° C., BaO · 2M
This is because the crystal phases of gO · 2SiO 2 and 2MgO · B 2 O 3 are precipitated and the crystal grains are enlarged, so that the surface roughness of the substrate is increased. FIG. 2 shows the situation.
本発明は、上記の問題点を解決したほうろう基板を提供
することを目的とする。An object of the present invention is to provide an enamel substrate that solves the above problems.
課題を解決するための手段 本発明は、上記の問題点を解決するため、ほうろう層と
して、主成分が少なくとも、重量%で、La2O3=0.5
〜3%、MgO=20〜50%,CaO=1〜25%,
BaO=0〜15%,B2O3=10〜30%,SiO2
=8〜20%,Mo2(MはTi、Zr,Snの少なく
とも1種)=0〜5%,P2O5=0〜5%のものを用い
ることを特徴とする。Means for Solving the Problems In order to solve the above problems, the present invention comprises, as an enamel layer, at least a main component of La 2 O 3 = 0.5.
~ 3%, MgO = 20-50%, CaO = 1-25%,
BaO = 0 to 15%, B 2 O 3 = 10 to 30%, SiO 2
= 8 to 20% Mo 2 (M is Ti, Zr, at least one of Sn) to = 0 to 5%, characterized in that used as the P 2 O 5 = 0-5%.
望ましくはLa2O3=0.5〜3%、MgO=20〜40
%,CaO=1〜20%,BaO=0〜15%,B2O3
=15〜25%,SiO2=10〜20%,ZrO2=0
〜5%,P2O5=0〜5%であることを特徴とする。Desirably La 2 O 3 = 0.5-3%, MgO = 20-40
%, CaO = 1-20%, BaO = 0-15%, B 2 O 3
= 15~25%, SiO 2 = 10~20 %, ZrO 2 = 0
˜5%, P 2 O 5 = 0 to 5%.
さらに望ましくはLa2O3=0.5〜3%、MgO=20
〜40%,CaO=1〜20%,B2O3=15〜25
%,SiO2=10〜20%,ZrO2=0〜5%,P2
O5=0〜5%であることを特徴とする。More preferably, La 2 O 3 = 0.5 to 3%, MgO = 20
~40%, CaO = 1~20%, B 2 O 3 = 15~25
%, SiO 2 = 10-20%, ZrO 2 = 0-5%, P 2
It is characterized in that O 5 = 0 to 5%.
作用 本発明により、第1図に示すように表面平滑性の向上し
た、かつ耐酸性、耐熱性に優れた回路基板が得られる。
その結果高密度配線パターンを形成することができる基
板として適用することが可能となる。Effects According to the present invention, as shown in FIG. 1, a circuit board having improved surface smoothness and excellent in acid resistance and heat resistance can be obtained.
As a result, it can be applied as a substrate on which a high-density wiring pattern can be formed.
実施例 本発明のほうろう層に用いられる結晶化ガラスは、原料
として各成分に相当する酸化物、炭酸塩、硝酸塩、燐酸
塩などを用い、白金または白金ロジウムルツボ中にて、
1400〜1500℃で30分〜1時間溶融後、水中急冷または
双ローラーにて急冷して製造した。Example Crystallized glass used in the enamel layer of the present invention, oxides, carbonates, nitrates, phosphates and the like corresponding to each component as a raw material, in platinum or platinum rhodium crucible,
After being melted at 1400-1500 ° C. for 30 minutes to 1 hour, it was manufactured by quenching in water or quenching with twin rollers.
表1は本発明のほうろう層を被覆したほうろう基板につ
きガラスの組成と、該ガラス粉末をボールミルにてプロ
パノールに分散させ、ステンレス基材(SUS430,大きさ
50×50×1)の全面に厚さ100μm電着し、900℃で10
分焼成した基板につき表面粗さ、うねり性、耐熱性、耐
酸性などについて調べた結果を示したものである。Table 1 shows the composition of the glass for the enamel substrate coated with the enamel layer of the present invention, and the glass powder was dispersed in propanol with a ball mill to obtain a stainless steel substrate (SUS430, size).
100μm thick electrodeposited on the entire surface of 50 × 50 × 1), 10 at 900 ℃
The results of examining the surface roughness, waviness, heat resistance, acid resistance, etc. of the substrate that has been partially fired are shown.
ここで表面粗さは中心線平均粗さRa、うねり性は目安
として最大高さRmaxで表わした。耐熱性は基板を920℃
の電気炉に10分入れ、取り出して30分室温に放置す
るサイクルを繰り返し、クラックや剥離の発生を調べ
た。クラックは基板を赤 インキ中に浸せき後、取り出して余分なインキをエアガ
ンで除去して観察した。表中の○△×は、○が10サイ
クル以上行なってもクラックや剥離の発生がなかったも
の、△は5〜9サイクル耐えたもの、×が4サイクル以
下で発生したものを示す。耐酸性は基板を、5%のくえ
ん酸水溶液中に60℃、30分浸せきして調べ、○は1
0mg/cm2以下の減量を、△が11〜20mg/cm2の
それを、×が20mg/cm2以上のそれを示し、小さい
ものほど耐酸性がよいことを示す。Here, the surface roughness is represented by the center line average roughness Ra, and the waviness is represented by the maximum height R max as a guide. Heat resistance of the substrate is 920 ℃
The cycle of putting in the electric furnace for 10 minutes, taking out, and leaving at room temperature for 30 minutes was repeated to examine the occurrence of cracks and peeling. Crack red board After soaking in the ink, it was taken out and the excess ink was removed with an air gun and observed. In the table, ◯ Δx indicates that cracks and peeling did not occur even after 10 cycles or more, Δ indicates that it survived 5 to 9 cycles, and x indicates that it occurred after 4 cycles. The acid resistance was examined by immersing the substrate in a 5% citric acid aqueous solution at 60 ° C. for 30 minutes, and ○ means 1
0 mg / cm 2 to less weight loss, it △ is 11~20mg / cm 2, × is 20 mg / cm 2 or more indicates it shows enough that acid resistance is good small.
また印刷精度の評価は、基板に印刷法、フォトレジスト
法を用いて、30μm幅の金電極をちどり状に6本/m
mの割合で形成し、さらにその上に幅300μmの酸化ル
テニウム抵抗体を形成して、サーマルヘッドを試作し、
電極間の抵抗値を測定した。そのときの電極間の抵抗ば
らつきが10%以内のものを○、10〜20%のものを
△、20%以上のものを×とした。The printing accuracy was evaluated by using a printing method and a photoresist method on the substrate, and 6 gold electrodes each having a width of 30 μm were formed in a stripe pattern / m.
m at a rate of 300 μm, and a ruthenium oxide resistor having a width of 300 μm is further formed thereon to make a thermal head as a prototype.
The resistance value between the electrodes was measured. At that time, the variation in resistance between the electrodes was within 10%, and the variation was 10 to 20%, and the variation was 20% or more.
表中の抵抗変化とは金電極の抵抗値変化をいい、電極と
ほうろう層との反応性を調べたもので、厚さ0.5μm、
大きさ1×20mmの金電極を基板上に形成したときの
抵抗値変化を、同形状の電極を石英基板上に形成したと
きの抵抗値と比較したときの変化で表わしたものであ
る。表中の○は変化が1桁以内のもの、△は2桁以内の
もの、×は3桁以上のものを示し、変化が小さいほど反
応性が少ないことを示す。The resistance change in the table refers to the change in resistance value of the gold electrode, which was obtained by examining the reactivity between the electrode and the enamel layer, and the thickness was 0.5 μm.
The change in resistance value when a gold electrode having a size of 1 × 20 mm is formed on a substrate is expressed by a change when compared with the resistance value when an electrode having the same shape is formed on a quartz substrate. In the table, ◯ indicates a change within one digit, Δ indicates a change within two digits, and x indicates a change of three digits or more. The smaller the change, the less the reactivity.
以上の評価に基づき総合評価を最下欄に、○△×で示し
た。Based on the above evaluations, the overall evaluation is shown in the bottom column as ◯ Δ ×.
No.1〜7は他の成分を一定として、SiO2/B2
O3を変化させたもの、No.8〜13はSiO2/B2
O3をほぼ一定にし、MgOを変化させたもの、No.
14〜18は同じくCaOを変化させたもの、No.1
9〜24は同じくLa2O3を変化させたもの、No.2
5〜27はBaOを、No.28〜33はZrO2,T
iO2,,SnO2,P2O5,Al2O3を添加したときの
影響である。なお比較例としてNo.34は特開昭56-7
3643号公報、No.35は特開昭58-104042号公報、N
o.36は特開昭60-172102号公報に開示されたものの
評価結果を示した。No. 1 to 7 are SiO 2 / B 2 with other components being constant.
That the O 3 is varied, No. 8 to 13 are SiO 2 / B 2
The O 3 is substantially constant, that changing the MgO, No.
Nos. 14 to 18 have the same CaO, No. 1
Nos. 9 to 24 have the same La 2 O 3 content, No. Two
5 to 27 are BaO, No. 28 to 33 are ZrO 2 , T
This is the effect of adding iO 2 , SnO 2 , P 2 O 5 , and Al 2 O 3 . As a comparative example, No. 34 is JP-A-56-7
No. 3643, No. 35 is Japanese Patent Laid-Open No. 58-104042, N
o. No. 36 shows the evaluation results of those disclosed in JP-A-60-172102.
表から明らかなように、SiO2を増加していけば、耐
熱性、耐酸性は向上するが、表面粗さが悪くなり、微細
印刷に不適となる。逆にB2O3を増加していけば、その
反対になる。従って、SiO2は8〜20%、B2O3は
10〜30%で、その比SiO2/B2O3が0.25〜1.0の
範囲が好ましい。As is clear from the table, if the SiO 2 content is increased, the heat resistance and the acid resistance are improved, but the surface roughness deteriorates, making it unsuitable for fine printing. Conversely, if B 2 O 3 is increased, the opposite is true. Therefore, it is preferable that SiO 2 is 8 to 20%, B 2 O 3 is 10 to 30%, and the ratio SiO 2 / B 2 O 3 is 0.25 to 1.0.
MgOは20%より少ないと結晶析出が不十分で、耐熱
性に劣る。50%より多いと、溶融しがたく、均質なガ
ラスを得ることが難しくなることともに、表面粗度が大
きくなり、かつ微細パターンの印刷性も悪くなる。If MgO is less than 20%, crystal precipitation is insufficient and heat resistance is poor. When it is more than 50%, it is difficult to melt, it is difficult to obtain a homogeneous glass, the surface roughness becomes large, and the printability of a fine pattern becomes poor.
CaOは1%より少ないと表面の平滑性、耐酸性を向上
させる効果がなく、25%より多いと、印刷精度が悪く
なる。第3図はガラスに含まれるBaO/(BaO+C
aO)を変化させたガラス(その組成は表2のNo.1
〜5に示した)を用いた基板の、前述のクエン酸に対す
る耐酸性を調べたものである。BaO/(BaO+Ca
O)が小さくなるにしたがい減量が小さく、耐酸性に優 れていることを意味する。また第4図はNo.1と5の
ガラスを用いた基板を、室温にて5%の王水に浸漬した
時の減量を調べたものである。No.1のほうが減量が
小さく、耐酸性に優れていることを意味する。以上より
CaOはガラスの耐酸性を向上させる働きを有し、Ba
Oにはそのような働きがないことがわかる。If CaO is less than 1%, there is no effect of improving the smoothness and acid resistance of the surface, and if it is more than 25%, printing accuracy deteriorates. Figure 3 shows BaO / (BaO + C) contained in glass.
aO) changed glass (its composition is No. 1 in Table 2)
5 shows the acid resistance to the above-mentioned citric acid of the substrate. BaO / (BaO + Ca
As O) becomes smaller, the weight loss is smaller and the acid resistance is excellent. Means that Further, FIG. The results are obtained by examining the weight loss of the substrates made of glass 1 and 5 immersed in 5% aqua regia at room temperature. No. 1 means that the weight loss is small and the acid resistance is excellent. From the above, CaO has the function of improving the acid resistance of glass,
It can be seen that O does not have such a function.
また第5図はNo.1と5のガラスを用いた基板の、焼
成温度と、表面平滑性の尺度として中心線平均粗さRa
の関係を調べたもので、No.5の場合820℃以上の
焼成でRaが極端に大きくなる。市販の厚膜ペーストの
焼成温度は810〜850℃のものが多いので、一般に
基板の焼成温度はこれ以上にしておく必要がある。例え
ば基板の焼成温度を900℃とすると、Raは0.35μm
となり、この上に厚膜ペーストを0.3μmの厚さに印刷
すると回路の断線を生じることになる。一方No.1の
場合は900℃で焼成してもRaは0.08μmであり、こ
の上に厚膜ペーストを印刷しても回路の断線を生じにく
い。この理由はNo.5ガラスでは2MgO・B2O3、BaO・2
MgO・2SiO2の2種の結晶が生成し、Raを大きくするの
に対し、No.1ガラスではBaOを含まないために2M
gO・B2O3しか生成せず、そのようなことがないためであ
る。Further, FIG. Substrates made of glass Nos. 1 and 5 had a firing temperature and a center line average roughness Ra as a measure of surface smoothness.
No. In the case of 5, Ra becomes extremely large by firing at 820 ° C. or higher. Since the firing temperature of commercially available thick film pastes is often 810 to 850 ° C., it is generally necessary to keep the firing temperature of the substrate higher than this. For example, when the baking temperature of the substrate is 900 ° C, Ra is 0.35 μm
Therefore, if a thick film paste is printed on this to a thickness of 0.3 μm, a circuit break will occur. On the other hand, No. In the case of No. 1, Ra was 0.08 μm even if it was baked at 900 ° C., and even if a thick film paste was printed on it, circuit breakage was unlikely to occur. The reason is No. 5 glass is 2MgO ・ B 2 O 3 , BaO ・ 2
While two types of crystals of MgO · 2SiO 2 are generated and Ra is increased, No. 2M because 1 glass does not contain BaO
This is because only gO · B 2 O 3 is generated and such a situation does not occur.
La2O3は基板の表面平滑性を向上させ、かつ耐熱性の
向上に大きく寄与する。耐熱性が向上する原因は、基板
とホーロ層の密着性が向上するためと思われる。ここで
アメリカほうろう協会が開発したPEI試験法によれ
ば、基材としてニッケル処理したSUS430を用いた
とき、La2O3を含まないNo.6ガラスを用いた基板
の密着性は26%、La2O3を含むNo.1の場合のそ
れは100%であった。基板とホーロ層の密着性が向上
する理由は明確ではないがLa2O3と基材に含まれるF
e2O3,NiOとの相互反応のためと考えられる。なお
このことを直接支持するものではないが、Binary Phas
e Diagrams Handbook(1981 GE Co)3/81にはLaとF
e,Niとが固溶体をつくることが記載されているが、
酸化物の場合にもなんらかの反応が起きているものと考
えられる。以上の理由からLa2O3は、少なくとも0.
5wt%以上含有することが望ましい。La 2 O 3 improves the surface smoothness of the substrate and greatly contributes to the improvement of heat resistance. The reason why the heat resistance is improved seems to be that the adhesion between the substrate and the holo layer is improved. According to the PEI test method developed by the American Enamel Society, No. 2 containing no La 2 O 3 was used when nickel-treated SUS430 was used as the base material. The adhesion of the substrate using 6 glass is 26%, and No. 6 containing La 2 O 3 is used. In case of 1, it was 100%. The reason why the adhesion between the substrate and the holo layer is improved is not clear, but La 2 O 3 and F contained in the base material
This is considered to be due to the mutual reaction with e 2 O 3 and NiO. Although this does not directly support this, Binary Phas
e Diagrams Handbook (1981 GE Co) 3/81 has La and F
Although it is described that e and Ni form a solid solution,
It is considered that some reaction is occurring even in the case of oxide. For the above reasons, La 2 O 3 is at least 0.
It is desirable to contain 5 wt% or more.
また3%より多いと耐酸性の低下、金電極の抵抗値変化
の増加を引き起こす。後者の理由としては先の文献に、
AuとLaが固溶体をつくることが示されており,またPhas
e Diagrams for Ceramists P46(1969 Am Ceram Soc)に
はAuと同じ貴金属のPdの酸化物PdOが、La2O3と化合物を
つくることが示されている。このことから金電極とほう
ろう層中のLa2O3とが反応し、抵抗値変化を引き起こ
したものと推察される。Further, if it exceeds 3%, the acid resistance is lowered and the change in the resistance value of the gold electrode is increased. For the latter reason, see
It has been shown that Au and La form a solid solution.
In e Diagrams for Ceramists P46 (1969 Am Ceram Soc), it is shown that PdO, an oxide of Pd, which is the same precious metal as Au, forms a compound with La 2 O 3 . From this, it is speculated that the gold electrode reacted with La 2 O 3 in the enamel layer to cause a change in resistance value.
BaOは本発明では必須成分ではないが、15wt%以
下であれば加えてもよい。その理由は前に述べたよう
に、耐酸性、表面平滑性を低下させるからである。BaO is not an essential component in the present invention, but may be added if it is 15 wt% or less. The reason is that the acid resistance and the surface smoothness are lowered as described above.
その他の添加可能な成分はZrO2,TiO2,Sn
O2,P2O5,Al2O3、ZnOなどがあげられるが、
5%以下までなら添加可能である。その理由は多いと表
面平滑性を劣化させるからである。Other components that can be added are ZrO 2 , TiO 2 , Sn
O 2 , P 2 O 5 , Al 2 O 3 , ZnO, etc.
Up to 5% can be added. The reason is that the surface smoothness deteriorates if there are many.
なお上記の成分以外に膨張係数を変化させたり、着色さ
せたりするため、アルカリ金属酸化物;鉄、マンガン、
ニッケル、コバルト、バナジウム、鉛、モリブデン、タ
ングステン、ビスマス、カドミウム、ストロンチウム等
の酸化物を加えることは可能であるが、アルカリ金属酸
化物は電気絶縁性を考慮して2%以下、その他の酸化物
も5%以下であることが望ましい。In addition to the above-mentioned components, alkali metal oxides; iron, manganese,
It is possible to add oxides such as nickel, cobalt, vanadium, lead, molybdenum, tungsten, bismuth, cadmium and strontium, but alkali metal oxides are 2% or less in consideration of electric insulation, and other oxides. Is also preferably 5% or less.
発明の効果 以上詳しく述べたように、本発明の基板は、表面平滑
性、耐熱性、耐酸性、微細印刷精度、金電極の安定性に
優れ、特に電気回路基板として有用 なお上記諸特性が要求されるモーター軸受け、メカニカ
ルシール、配管やタンクなどの化学用装置、エンジンカ
バーなどの自動車部品、ほうろう鍋などの家庭器具にも
用途が考えられる。EFFECTS OF THE INVENTION As described in detail above, the substrate of the present invention is excellent in surface smoothness, heat resistance, acid resistance, fine printing accuracy, and stability of gold electrodes, and is particularly useful as an electric circuit board. Applications include motor bearings, mechanical seals, chemical devices such as pipes and tanks, automobile parts such as engine covers, and household appliances such as enamel pots.
である。Is.
第1図は本発明の一実施例の回路基板の表面粗さを示す
形状図、第2図は従来例の回路基板の表面粗さを示す形
状図である。第3図、第4図は回路基板の耐酸性を示す
図、第5図は回路基板の焼成温度と表面粗さの関係を示
す図である。FIG. 1 is a shape diagram showing the surface roughness of a circuit board according to an embodiment of the present invention, and FIG. 2 is a shape diagram showing the surface roughness of a conventional circuit board. 3 and 4 are diagrams showing the acid resistance of the circuit board, and FIG. 5 is a diagram showing the relationship between the firing temperature and the surface roughness of the circuit board.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 平賀 将浩 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭63−89435(JP,A) 特開 平2−40990(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Hiraga 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-63-89435 (JP, A) JP-A-2- 40990 (JP, A)
Claims (4)
=20〜50%,CaO=1〜25%,BaO=0〜1
5%,B2O3=10〜30%,SiO2=8〜20%,
Mo2(MはTi、Zr,Snの少なくとも1種)=0
〜5%,P2O5=0〜5%を主成分とするほうろう層上
に金電極を形成したことを特徴とする回路基板。1. La 2 O 3 = 0.5-3% by weight, MgO
= 20 to 50%, CaO = 1 to 25%, BaO = 0 to 1
5%, B 2 O 3 = 10~30%, SiO 2 = 8~20%,
Mo 2 (M is at least one of Ti, Zr and Sn) = 0
5%, the circuit board, characterized in that a gold electrode was formed on the enamel layer mainly composed of P 2 O 5 = 0~5%.
で、La2O3=0.5〜3%、MgO=20〜40%,C
aO=1〜20%,BaO=0〜15%,B2O3=15
〜25%,SiO2=10〜20%,ZrO2=0〜5
%,P2O5=0〜5%であることを特徴とする請求項1
記載の回路基板。2. The main component of the enamel layer is at least% by weight.
And La 2 O 3 = 0.5-3%, MgO = 20-40%, C
aO = 1-20%, BaO = 0-15%, B 2 O 3 = 15
~25%, SiO 2 = 10~20% , ZrO 2 = 0~5
%, Claim 1, characterized in that the P 2 O 5 = 0~5%
The described circuit board.
で、La2O3=0.5〜3%、MgO=20〜40%,C
aO=1〜20%,B2O3=15〜25%,SiO2=
10〜20%,ZrO2=0〜5%,P2O5=0〜5%
であることを特徴とする請求項2記載の回路基板。3. The main component of the enamel layer is at least% by weight.
And La 2 O 3 = 0.5-3%, MgO = 20-40%, C
aO = 1 to 20%, B 2 O 3 = 15 to 25%, SiO 2 =
10-20%, ZrO 2 = 0-5%, P 2 O 5 = 0-5%
The circuit board according to claim 2, wherein
特徴とする請求項1、2または3記載の回路基板。4. The circuit board according to claim 1, 2 or 3, wherein SiO 2 / B 2 O 3 is 0.25 to 1.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19177788A JPH0656913B2 (en) | 1988-07-29 | 1988-07-29 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19177788A JPH0656913B2 (en) | 1988-07-29 | 1988-07-29 | Circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0240991A JPH0240991A (en) | 1990-02-09 |
| JPH0656913B2 true JPH0656913B2 (en) | 1994-07-27 |
Family
ID=16280362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19177788A Expired - Lifetime JPH0656913B2 (en) | 1988-07-29 | 1988-07-29 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0656913B2 (en) |
-
1988
- 1988-07-29 JP JP19177788A patent/JPH0656913B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0240991A (en) | 1990-02-09 |
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