JPH065729B2 - One-dimensional contact type image sensor - Google Patents
One-dimensional contact type image sensorInfo
- Publication number
- JPH065729B2 JPH065729B2 JP59196556A JP19655684A JPH065729B2 JP H065729 B2 JPH065729 B2 JP H065729B2 JP 59196556 A JP59196556 A JP 59196556A JP 19655684 A JP19655684 A JP 19655684A JP H065729 B2 JPH065729 B2 JP H065729B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- photoelectric conversion
- dimensional
- substrate
- ccd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は、ファクシミリ等において送信原稿を読みと
るための、一次元密着型のイメージセンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a one-dimensional contact type image sensor for reading a transmission original in a facsimile or the like.
（従来例の構成とその問題点） 近年、一般にファクシミリの小形化、低コスト化を目指
して、送信原稿幅と略等しい読取幅をもつ、密着型の一
次元イメージセンサの研究開発が進んでいる。(Structure of Conventional Example and Problems) In recent years, research and development of a contact type one-dimensional image sensor having a reading width substantially equal to the width of a transmission document has been progressing in general, aiming at downsizing and cost reduction of a facsimile. .
第１図は、この種イメージセンサの従来例の構成を模式
的に示したもので、１は支持基板であり、この上にCCD
(Charge Coupled Devices)とフォトダイオード（以下単
にＰＤという）とによる一次元CCD型イメージセンサ２
が、市松模様状に配列され、一次元密着型イメージセン
サを構成している。このような構成では、原稿像をシャ
ープに結像するに必要な光学系、すなわち、たとえばロ
ッドレンズがセンサ列に対応して２列必要であり、従っ
て光学系が複雑になる。この欠点を排除するには、一次
元CCD型イメージセンサを一列にしてインライン型密着
型イメージセンサを構成しなければならないが、その時
のＰＤはイメージセンサ・チップ端から、数μmの位置
から配列されなければ検出像に空白を生ずることにな
る。また、最端部及び中心部のそれぞれのＰＤは光電変
換特性が同じでなければ、特性の良好なイメージセンサ
ということはできない。FIG. 1 schematically shows the configuration of a conventional example of this type of image sensor, in which 1 is a supporting substrate, and a CCD
One-dimensional CCD image sensor 2 consisting of (Charge Coupled Devices) and photodiodes (hereinafter simply referred to as PD)
Are arranged in a checkered pattern to form a one-dimensional contact image sensor. In such a configuration, an optical system necessary for sharply forming an original image, that is, for example, two rod lenses corresponding to the sensor columns are required, and thus the optical system becomes complicated. In order to eliminate this drawback, the in-line contact image sensor must be constructed by arranging the one-dimensional CCD image sensors in a row. At that time, the PDs are arranged at a position of several μm from the edge of the image sensor chip. If not, a blank will be generated in the detected image. Further, if the photoelectric conversion characteristics are not the same for the PDs at the endmost portion and the center portion, it cannot be said that the image sensor has good characteristics.
（発明の目的） 本発明は上述の欠点に鑑み、イメージセンサ・チップの
端部から数10μmの、極めて端部に近い位置からＰＤ相
当の光電変換素子を配して、検出像の空白のない、か
つ、イメージ読取幅全域にわたって光電変換特性に差異
がないようにした、小形化、低コスト化を達成できる一
次元密着型イメージセンサを提供することを目的とす
る。(Object of the Invention) In view of the above-mentioned drawbacks, the present invention arranges a photoelectric conversion element corresponding to a PD from a position of several tens of μm from the end of the image sensor chip, which is extremely close to the end, and there is no blank in the detected image. Another object of the present invention is to provide a one-dimensional contact type image sensor capable of achieving miniaturization and cost reduction in which there is no difference in photoelectric conversion characteristics over the entire image reading width.
（発明の構成） 本発明は、第１導電型のSi基板上に、直線的に複数個の
光電変換素子と、それに対応して蓄積された信号電荷を
読み出すCCDとを設け、とくに前記光電変換素子を、前
記Si基板の表面にそれぞれ独立して設けられた第２導電
型のウエルと、前記各ウエル内に形成されたSi基板と同
じ導電型の１個の高濃度層によるＰＮ接合とにより形成
させ、Si基板とウエル間に逆バイアスを印加し、ウエル
領域を単位画素ごとに分離した構造として目的を達成し
たものである。(Structure of the Invention) The present invention provides a plurality of photoelectric conversion elements linearly on a first conductivity type Si substrate and a CCD for reading out signal charges accumulated corresponding to the photoelectric conversion elements. The device comprises a well of the second conductivity type independently provided on the surface of the Si substrate, and a PN junction formed in each well by one high-concentration layer of the same conductivity type as the Si substrate. The purpose is achieved by forming a structure, applying a reverse bias between the Si substrate and the well, and separating the well region for each unit pixel.
（実施例の説明） 以下本発明を一実施例により図面を用いて詳細に説明す
る。(Description of Embodiments) The present invention will be described in detail below with reference to the drawings according to an embodiment.
第２図は本発明の一実施例を説明する模式図で、21は支
持基板、22は単結晶Si基板に作り込まれた一次元ＣＣＤ
イメージセンサであり、その光電変換素子を符号２３
で、CCDを２４で示している。本発明の一次元密着型イ
メージセンサは、Si基板の端面から数10μmの位置まで
図示のように光電変換素子２３が一次元に配列されてい
る。FIG. 2 is a schematic diagram for explaining an embodiment of the present invention, in which 21 is a support substrate and 22 is a one-dimensional CCD formed on a single crystal Si substrate.
The image sensor is a photoelectric conversion element 23
, CCD is shown by 24. In the one-dimensional contact type image sensor of the present invention, the photoelectric conversion elements 23 are arranged one-dimensionally from the end surface of the Si substrate to a position of several tens of μm as shown in the figure.
第３図は本発明に用いる一次元CCD型イメージセンサの
駆動方法を示す模式図で、３１はSi基板、３２は光電変
換素子、３３は信号線、３４はCCDによる信号読出し回
路、３５はフローティング・ディフィジョン・アンプで
あり、本発明においても従来同様に光電変換素子３２が
読んだ信号は光電変換されて信号線３３により、読出し
回路３４のCCDに転送され、各CCDから順次出力信号が送
出される。FIG. 3 is a schematic diagram showing a driving method of the one-dimensional CCD image sensor used in the present invention, 31 is a Si substrate, 32 is a photoelectric conversion element, 33 is a signal line, 34 is a signal reading circuit by CCD, and 35 is a floating circuit. In the present invention, the signal read by the photoelectric conversion element 32 is photoelectrically converted and transferred to the CCD of the read circuit 34 by the signal line 33, and the output signal is sequentially output from each CCD. To be done.
第４図は、本発明要部の光電変換素子の一実施例の構造
を説明する図で、(a)は平面図、(b)はそのＡ−A′断面
図、(c)は同じくＢ−B′断面図である。４１はＮ導電型
のSi基板、４２はＰ導電型のウエル、４３はn+層、４４
はLOCOS(local Oxidation of Silicon)領域、４５はP+
領域によるチャンネルストップ、４６は信号線であり、
とくに(c)図に示したようにＮ導電型Si基板４１とＰ導
電型ウエル４２のP+領域（チャンネルストップ）４５と
の間に、P+領域を基準にした逆バイアス電圧Ｖsubを印
加している。この構成でＮ型Si基板４１、それと反対導
電型であるＰ型ウエル４２及びその中に形成したＮ型の
高濃度層n+層４３とによって光電変換素子が構成されて
いる。4A and 4B are views for explaining the structure of an embodiment of the photoelectric conversion element of the present invention. FIG. 4A is a plan view, FIG. It is a -B 'sectional view. 41 is an N conductivity type Si substrate, 42 is a P conductivity type well, 43 is an n + layer, 44
Is LOCOS (local Oxidation of Silicon) area, 45 is P +
Channel stop by area, 46 is a signal line,
In particular, a reverse bias voltage V sub based on the P + region is applied between the N conductivity type Si substrate 41 and the P + region (channel stop) 45 of the P conductivity type well 42 as shown in FIG. is doing. In this structure, the N-type Si substrate 41, the P-type well 42 having the opposite conductivity type, and the N-type high concentration layer n + layer 43 formed therein constitute a photoelectric conversion element.
第５図は前図(c)のようにＮ導電型Si基板４１に逆バイ
アス電圧Ｖsubを印加した時の、光電変換素子の深さ方
向のポテンシャル図である。本発明に用いる光電変換素
子内では図示のように、Ｐ導電型ウエルより深い所で発
生した電子は符号Ｂで示したようにＮ型Si基板に押しだ
され、Ｐ型ウエル内で発生した電子はＡで示すようにn+
層に蓄積されて、信号電圧として取り扱われる。すなわ
ち、光電変換部分をＰ型ウエル領域内だけにすることが
可能である。従って、本発明に用いる一次元CCD型イメ
ージセンサでは、チップ（基板）の端から20μm以内ま
で光電変換素子を形成でき、かつ、単位画素に対応させ
てＰ型ウエル領域を分離することにより、最端部の光電
変換素子と中心部分のそれとの光電変換特性を同じくす
ることができる。FIG. 5 is a potential diagram in the depth direction of the photoelectric conversion element when a reverse bias voltage V sub is applied to the N-conductivity type Si substrate 41 as shown in FIG. In the photoelectric conversion element used in the present invention, as shown in the figure, electrons generated deeper than the P-conductivity type well are pushed out to the N-type Si substrate as shown by the symbol B, and electrons generated in the P-type well. Is n +
It is stored in a layer and treated as a signal voltage. That is, it is possible to make the photoelectric conversion portion only in the P-type well region. Therefore, in the one-dimensional CCD image sensor used in the present invention, the photoelectric conversion element can be formed within 20 μm from the edge of the chip (substrate), and the P-type well region is separated corresponding to the unit pixel. It is possible to make the photoelectric conversion characteristics of the end photoelectric conversion element and that of the central photoelectric conversion element the same.
第６図は光電変換素子の製造の一例を説明するもので、
まず、(a)図のようにＮ型Si基板４１にＰ型ウエル４２
を形成する。この時、ウエルの深さは２〜10μm、ま
た、不純物濃度は1014〜1016cm-3程度にする。つぎに
(b)図のようにLOCOS法で、Ｐ型ウエル４２の周囲にP+領
域４５を形成し、ウエルにバイアス電圧が印加できるよ
うにする。つぎの工程で(c)図に示すようにLOCOSを利用
して、n+層４３領域を形成させる。FIG. 6 illustrates an example of manufacturing a photoelectric conversion element.
First, as shown in (a), the P-type well 42 is formed on the N-type Si substrate 41.
To form. At this time, the well depth is set to 2 to 10 μm, and the impurity concentration is set to about 10 14 to 10 16 cm −3 . Next
As shown in (b), the P + region 45 is formed around the P-type well 42 by the LOCOS method so that a bias voltage can be applied to the well. In the next step, LOCOS is used to form the n + layer 43 region as shown in FIG.
本発明はこのように構成した光電変換素子と、CCDとに
より一次元CCD型イメージセンサ・チップを形成させ、
それを複数個１列に配列して一次元密着型イメージセン
サを構成したものである。The present invention forms a one-dimensional CCD type image sensor chip by the photoelectric conversion element thus constructed and CCD,
A plurality of them are arranged in one row to form a one-dimensional contact type image sensor.
（発明の効果） 以上説明して明らかなように、本発明を構成する一次元
CCD型イメージセンサは、チップの端部から20μm以内に
光電変換素子が形成されており、かつ、単位画素ごとに
ウエルを分離した構造であるため、それを一列に配した
本発明は、検出像に空白を生ぜず、かつ全長に亘って像
の検出特性にばらつきはない。また、構造上光学系が不
要、または単純になるため、小型簡易な一次元密着型イ
メージセンサとして、ファクシミリ等に用いれば大いに
益するところがある。(Effects of the Invention) As is apparent from the above description, the one-dimensional structure of the present invention
Since the CCD image sensor has a photoelectric conversion element formed within 20 μm from the edge of the chip and has a structure in which wells are separated for each unit pixel, the present invention in which the wells are arranged in a line Does not cause a blank and there is no variation in the image detection characteristics over the entire length. Moreover, since the optical system is structurally unnecessary or simple, there is a great advantage in using it as a compact and simple one-dimensional contact image sensor in a facsimile or the like.
第１図は従来の密着型一次元イメージセンサの模式的構
成図、第２図は本発明の一次元密着型イメージセンサの
模式的構成図、第３図は一実施例の模式的構成図、第４
図は本発明要部の光電変換素子を説明する模式的平面図
及び断面図、第５図は本発明要部の光電変換素子のポテ
ンシャル図、第６図は光電変換素子の製造工程説明図で
ある。 １，２１，３１，４１…基板、２，２２…一次元CCD型
イメージセンサ、２３，３２…光電変換素子、３３，４
６…信号線、２４，３４…CCD、３５…アンプ、４２…
ウエル、４３…n+層、４４…LOCOS領域、４５…P+領域
（チャンネルストップ）。FIG. 1 is a schematic configuration diagram of a conventional contact type one-dimensional image sensor, FIG. 2 is a schematic configuration diagram of a one-dimensional contact type image sensor of the present invention, and FIG. 3 is a schematic configuration diagram of one embodiment, Fourth
The figure is a schematic plan view and a cross-sectional view for explaining the photoelectric conversion element of the main part of the present invention, FIG. 5 is a potential diagram of the photoelectric conversion element of the main part of the present invention, and FIG. 6 is a manufacturing process explanatory view of the photoelectric conversion element. is there. 1, 21, 31, 41 ... Substrate, 2, 22 ... One-dimensional CCD image sensor, 23, 32 ... Photoelectric conversion element, 33, 4
6 ... Signal line, 24, 34 ... CCD, 35 ... Amplifier, 42 ...
Well, 43 ... N + layer, 44 ... LOCOS region, 45 ... P + region (channel stop).
Claims (2)
られた逆導電型のウエルとそのウエル内に形成された一
導電型の１個の高濃度層とのＰＮ接合によりそれぞれ構
成された複数の光電変換素子と、前記光電変換素子に蓄
積された信号電荷を読み出すＣＣＤとからなる一次元Ｃ
ＣＤ型イメージセンサのチップが、支持基板上に複数個
一直線状に配列されていることを特徴とする一次元密着
型イメージセンサ。1. A reverse conductivity type well independently provided on a single conductivity type Si substrate, and a PN junction between one high conductivity layer of one conductivity type formed in the well. One-dimensional C including a plurality of photoelectric conversion elements and a CCD for reading out signal charges accumulated in the photoelectric conversion elements
A one-dimensional contact image sensor, wherein a plurality of CD image sensor chips are arranged in a straight line on a support substrate.
縁と最端部の光電変換素子との距離が20μm以下である
ことを特徴とする特許請求の範囲第(1)項記載の一次元
密着型イメージセンサ。2. The one-dimensional contact according to claim (1), wherein the distance between the chip edge of the one-dimensional CCD image sensor and the photoelectric conversion element at the outermost end is 20 μm or less. Type image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196556A JPH065729B2 (en) | 1984-09-21 | 1984-09-21 | One-dimensional contact type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196556A JPH065729B2 (en) | 1984-09-21 | 1984-09-21 | One-dimensional contact type image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6175559A JPS6175559A (en) | 1986-04-17 |
| JPH065729B2 true JPH065729B2 (en) | 1994-01-19 |
Family
ID=16359697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59196556A Expired - Lifetime JPH065729B2 (en) | 1984-09-21 | 1984-09-21 | One-dimensional contact type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065729B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0793418B2 (en) * | 1987-02-23 | 1995-10-09 | 株式会社東芝 | Linear image sensor |
| JPS6473762A (en) * | 1987-09-16 | 1989-03-20 | Toshiba Corp | Linear image sensor |
| JP3413078B2 (en) * | 1997-10-06 | 2003-06-03 | キヤノン株式会社 | Photoelectric conversion device and contact image sensor |
| GB0507217D0 (en) | 2005-04-09 | 2005-05-18 | Rolls Royce Plc | A rotor for an electrical machine |
-
1984
- 1984-09-21 JP JP59196556A patent/JPH065729B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6175559A (en) | 1986-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |