JPH0658261B2 - Pyroelectric infrared array sensor and method of manufacturing the same - Google Patents
Pyroelectric infrared array sensor and method of manufacturing the sameInfo
- Publication number
- JPH0658261B2 JPH0658261B2 JP62149653A JP14965387A JPH0658261B2 JP H0658261 B2 JPH0658261 B2 JP H0658261B2 JP 62149653 A JP62149653 A JP 62149653A JP 14965387 A JP14965387 A JP 14965387A JP H0658261 B2 JPH0658261 B2 JP H0658261B2
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- thin film
- pyroelectric
- substrate
- infrared array
- array sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
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- Power Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は焦電薄膜を用いた焦電型赤外線アレイセンサに
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pyroelectric infrared array sensor using a pyroelectric thin film.
従来の技術 焦電型赤外線検出器は熱型の赤外線検出器で、常温動作
が可能で、感度の波長依存性が小さく、熱型検出器のな
かでは高感度である。2. Description of the Related Art Pyroelectric infrared detectors are thermal infrared detectors that are capable of operating at room temperature, have a small wavelength dependence of sensitivity, and have high sensitivity among thermal detectors.
焦電型検出器に使用されている材料には、ＴＧＳ系・Ｌ
iＴaＯ３系等の単結晶、ＰbＴiＯ３系・Ｐbx Ｚr1-x
ＴiＯ３系のセラミック、ＰＶＦ２系等の有機膜等があ
る。The materials used for the pyroelectric detector are TGS-L
Single crystal such as iTaO 3 system, PbTiO 3 system, Pb x Zr 1-x
Examples include TiO 3 -based ceramics, PVF 2 -based organic films, and the like.
ＰbＴiＯ３は焦電材料の性能指数であるＦv(= γ/εCv)
及び が高い。ここでγは焦電係数、εは誘電率、Cvは体積比
熱、dは厚さである。また、ＰbＴiＯ３は焦電係数の温
度変化が小さく、キュリー点が十分高い等の特長をもっ
ている。焦電型検出器には、ＰbＴiＯ３磁器が用いられ
る場合が多い。磁器は多結晶であり、結晶軸の配列に方
向性は無く、したがって自発分極Ｐｓもランダムに配列
している。焦電材料は自発分極Ｐｓの変化を出力として
取り出すため、Ｐｓが一方向に揃っているとき、最大出
力が得られる。そこで、磁器には高電界を印加してＰs
の向きを揃える分極処理が必要である。PbTiO 3 is the figure of merit of pyroelectric materials Fv (= γ / εCv)
as well as Is high. Here, γ is the pyroelectric coefficient, ε is the dielectric constant, Cv is the volume specific heat, and d is the thickness. Further, PbTiO 3 has the characteristics that the change in pyroelectric coefficient with temperature is small and the Curie point is sufficiently high. PbTiO 3 porcelain is often used for the pyroelectric detector. The porcelain is polycrystal, and there is no directivity in the arrangement of crystal axes, so that the spontaneous polarization Ps is also arranged randomly. Since the pyroelectric material takes out the change in the spontaneous polarization Ps as an output, the maximum output can be obtained when Ps is aligned in one direction. Therefore, by applying a high electric field to the porcelain, Ps
It is necessary to perform polarization processing to align the directions.
また、Ｃ軸配向したＰbＴiＯ３薄膜の配向軸方向に発生
する焦電気を利用した場合、Ｃ軸方向の誘電率が低下
し、焦電係数が増大するので、ＰbＴiＯ３磁器の約３倍
のＦvを示す高感度焦電材料を実現できることが、第30
回応用物理学関係連合講演予稿集7P-z-2に報告されてい
る。Further, when pyroelectricity generated in the orientation axis direction of the Cb-oriented PbTiO 3 thin film is used, the permittivity in the C-axis direction decreases and the pyroelectric coefficient increases, so that the Fv is about three times that of PbTiO 3 porcelain. The ability to realize high-sensitivity pyroelectric materials that exhibit
Reported at Proceedings of 7th Joint Lecture on Applied Physics 7P-z-2.
赤外線アレイセンサは光学系との関係で空間分解能をよ
くするために微細な配列にすることが望ましい。It is desirable that the infrared array sensor has a fine array in order to improve the spatial resolution in relation to the optical system.
発明が解決しようとする問題点 焦電材料の厚さが薄くなるほど、雑音が小さくなり、検
出能:Ｄ*は増大する。ＰbＴiＯ３磁器でアレイを構成す
る場合、磁器の薄膜化には限界があり、厚さを薄くして
Ｄ*を向上することは限度がある。また、各エレメント
間のクロストークが大きくなり空間分解能が低下する。
そのため各エレメントを分離することが必要となる。面
積を小さくすると電気容量が小さくなるため、外部から
の静電容量、浮遊容量の点から小形化も困難となる。Problems to be Solved by the Invention As the thickness of the pyroelectric material becomes thinner, the noise becomes smaller and the detectability: D * increases. When an array is made of PbTiO 3 porcelain, there is a limit to thinning the porcelain, and there is a limit to improving the D * by reducing the thickness. In addition, the crosstalk between each element increases and the spatial resolution decreases.
Therefore, it is necessary to separate each element. If the area is made smaller, the electric capacity becomes smaller, so it is difficult to make it smaller in terms of external electrostatic capacity and stray capacity.
さらに、焦電材料に分極処理を施すとき次のような問題
が生じる。Further, when the polarization treatment is applied to the pyroelectric material, the following problems occur.
(1) 分極処理により絶縁破壊が生じる場合がある。(1) Dielectric breakdown may occur due to polarization treatment.
(2) 高密度に配列している高分解能アレイ素子では、そ
れらを均一に分極することが困難である。(2) It is difficult to uniformly polarize high-resolution array elements arranged in high density.
(3) 半導体デバイス上に焦電薄膜を形成した集積化デバ
イスでは、分極処理そのものが不可能な場合がある。(3) In an integrated device in which a pyroelectric thin film is formed on a semiconductor device, polarization treatment itself may not be possible.
一方、焦電薄膜はスパッタリングなどにより高温で作製
されるため、基板との熱膨脹の違いによる熱応力が生じ
る。感度を向上するため焦電薄膜と接した基板の一部を
除去する構造では、この熱応力により焦電薄膜の割れが
生じた。またこれらの焦電薄膜は圧電体であるので、振
動や音による雑音も生じた。On the other hand, since the pyroelectric thin film is produced at a high temperature by sputtering or the like, thermal stress occurs due to the difference in thermal expansion from the substrate. In the structure in which a part of the substrate in contact with the pyroelectric thin film was removed to improve the sensitivity, the thermal stress caused the pyroelectric thin film to crack. Further, since these pyroelectric thin films are piezoelectric materials, noise due to vibration and sound was also generated.
問題点を解決するための手段 基板と、前記基板上に形成された焦電薄膜群と前記焦電
薄膜群上に形成された複数の分離した電極薄膜群と、前
記焦電薄膜の基板側の面に形成された第2の電極薄膜
と、前記焦電薄膜の少なくとも片面を被覆する有機薄膜
とを有し、少なくとも前記焦電薄膜と接する基板の一部
を除去した構成とする。Means for Solving Problems A substrate, a pyroelectric thin film group formed on the substrate, a plurality of separated electrode thin film groups formed on the pyroelectric thin film group, and a substrate side of the pyroelectric thin film A second electrode thin film formed on the surface and an organic thin film that covers at least one surface of the pyroelectric thin film, and at least a part of the substrate that is in contact with the pyroelectric thin film is removed.
作用 上記のような焦電薄膜及び構成を用いた赤外線アレイセ
ンサにおいては、熱拡散によるクロストークを低減しか
つ感度の向上を図ることができるばかりでなく、熱応力
による薄膜のはがれ・割れを防止できる。また有機薄膜
を用いることによりセンサ部の機械的Ｑを低減でき、振
動・音による雑音を抑制することができる。Action In the infrared array sensor using the above pyroelectric thin film and structure, not only can crosstalk due to thermal diffusion be reduced and sensitivity can be improved, but also peeling and cracking of the thin film due to thermal stress can be prevented. it can. Further, by using the organic thin film, the mechanical Q of the sensor unit can be reduced, and noise due to vibration / sound can be suppressed.
実施例 第1図及び第2図は本発明の焦電型赤外線アレイ素子の構
造及び製造方法を示す図である。Example FIG. 1 and FIG. 2 are views showing the structure and manufacturing method of a pyroelectric infrared array element of the present invention.
（100）でへき開し鏡面研摩したＭgＯ単結晶基板１上
に、高周波マグネトロンスパッタ法で焦電薄膜群２とし
て、Pb1-x Lax Ti1-0.75x O3 (PLT)４μｍ成長させた。
上記焦電薄膜は各エレメントごとにメタルマスクにより
分離されている。雰囲気ガスにはＡｒとＯ２の混合ガス
を用い、スパッタリングターゲットは、 ｛（1-Y) Pb1-x Lax Ti1-0.75x O3 +Y PbO｝ の粉末である。表１にスパッタリング条件を示す。Pb 1-x Lax Ti 1-0.75x O 3 (PLT) 4 μm was grown as a pyroelectric thin film group 2 on a MgO single crystal substrate 1 cleaved with (100) and mirror-polished by a high frequency magnetron sputtering method.
The pyroelectric thin film is separated for each element by a metal mask. A mixed gas of Ar and O 2 was used as the atmosphere gas, and the sputtering target was powder of {(1-Y) Pb 1-x Lax Ti 1-0.75x O 3 + Y PbO}. Table 1 shows the sputtering conditions.
次に、この焦電薄膜群２上に厚さ約0.2μｍの複数のＡ
ｕ電極薄膜３を蒸着により作製した。前記Ａｕ電極薄膜
３は、フォトグラフィの手法によりアレイのピッチに合
わせて格子状に分離、配列されている。次にこれらの上
に有機薄膜４を設けた。上記有機薄膜４は感光性ポリイ
ミド系樹脂をスピンナーで塗布し、紫外線に照射した後
200℃で熱処理したものである。膜厚は3.5μｍであっ
た。電極薄膜３上の一部にはコンタクトホール５を設け
て取り出し電極６と接触させた。Next, a plurality of A layers having a thickness of about 0.2 μm are formed on the pyroelectric thin film group 2.
The u electrode thin film 3 was produced by vapor deposition. The Au electrode thin film 3 is separated and arrayed in a lattice according to the pitch of the array by a technique of photography. Next, the organic thin film 4 was provided on these. The organic thin film 4 is formed by applying a photosensitive polyimide resin with a spinner and irradiating it with ultraviolet rays.
Heat treated at 200 ° C. The film thickness was 3.5 μm. A contact hole 5 was provided in a part of the electrode thin film 3 to make contact with the extraction electrode 6.
さらに、焦電薄膜群２の下部におけるＭｇＯ基板１を熱
濃燐酸によりエッチングし、開口部７を設けた。このと
きエッチング幅を焦電薄膜群２の幅より大きくして、焦
電薄膜群２はＭｇＯ基板１に接触しないようにしてい
る。上記構成において、焦電薄膜群２とＭｇＯ基板１と
の熱膨脹の違いによる熱応力を有機薄膜４は緩和してい
る。前記開口部７を通して前記焦電薄膜群２の基板側の
面にＮｉＣｒ電極薄膜８を蒸着により作製した。 Further, the MgO substrate 1 below the pyroelectric thin film group 2 was etched with hot concentrated phosphoric acid to form an opening 7. At this time, the etching width is made larger than the width of the pyroelectric thin film group 2 so that the pyroelectric thin film group 2 does not contact the MgO substrate 1. In the above structure, the organic thin film 4 relaxes the thermal stress due to the difference in thermal expansion between the pyroelectric thin film group 2 and the MgO substrate 1. A NiCr electrode thin film 8 was formed by vapor deposition on the substrate-side surface of the pyroelectric thin film group 2 through the opening 7.
ＰＬＴ焦電薄膜が分極軸の75%以上が一方向に配向して
いるとき、焦電係数:γは5×10-8C／cm2Kとなり、この
値は200℃で100kV／cm印加して分極処理を行ったＰbＴi
Ｏ３セラミクス（γ=1.8x10-8C／cm2K)とくらべかなり
大きい。配向率90%の場合焦電係数は6.8x10-8C／cm2Kで
ある。また、分極処理後の値と比べ殆ど変わらないばか
りでなく、配向率が小さい場合の分極後の値より大き
い。誘電率は、配向率90%の場合、セラミクスとほぼ同
等の値で約200である。When 75% or more of the polarization axis of the PLT pyroelectric thin film is oriented in one direction, the pyroelectric coefficient: γ is 5 × 10 -8 C / cm 2 K, and this value is 100 kV / cm at 200 ° C. Polarized PbTi
It is considerably larger than O 3 ceramics (γ = 1.8 x 10 -8 C / cm 2 K). When the orientation rate is 90%, the pyroelectric coefficient is 6.8 x 10 -8 C / cm 2 K. In addition, it is almost the same as the value after the polarization treatment, and is larger than the value after the polarization when the orientation ratio is small. When the orientation rate is 90%, the dielectric constant is about 200, which is almost the same value as that of ceramics.
このように本実施例に用いたPLT薄膜では、薄膜製作時
に十分にｃ軸に配向しておれば分極処理を行わなくても
自発分極が揃っており、特に配向率７５％以上の薄膜で
その効果が大きいことが明らかになった。また、焦電材
料としての性能指数であるＦv(=γ/εCv)の値も大きく
なる。200℃で１０分間100kV/cm印加して分極処理を行
ったＰｂＴｉＯ３セラミクスの値と比較して、ＰＬＴ薄
膜は３倍強の値を示した。As described above, in the PLT thin film used in this example, if the film is sufficiently oriented in the c-axis at the time of thin film production, spontaneous polarization is uniform even if polarization treatment is not performed. It was revealed that the effect was great. Further, the value of Fv (= γ / εCv), which is a figure of merit as a pyroelectric material, also becomes large. Compared with the value of PbTiO 3 ceramics which was subjected to polarization treatment by applying 100 kV / cm at 200 ° C. for 10 minutes, the PLT thin film showed a value slightly more than three times.
PLT焦電薄膜のｃ軸配向率は、ＭｇＯ基板に作製した下
地電極上より、直接ＭｇＯ基板上に作製した方が高く、
性能指数の点でも分極処理不要の点でも有利である。The c-axis orientation rate of the PLT pyroelectric thin film is higher when directly prepared on the MgO substrate than on the base electrode formed on the MgO substrate.
It is also advantageous in terms of the figure of merit and the point that polarization treatment is unnecessary.
焦電型赤外線アレイセンサとしての特性も、材料性能指
数のアップ及び各エレメント間の熱拡散を小さくした構
成により大幅に向上した。焦電薄膜が各エレメントで分
離されていなくてその両端で基板に接触しているセンサ
と比較して、感度及びＤ*は5倍以上増大した。また、ク
ロストークは第3図に示すように一桁低減された。The characteristics of the pyroelectric infrared array sensor have also been greatly improved by increasing the material figure of merit and by reducing the thermal diffusion between each element. The sensitivity and D * were increased by more than 5 times compared to the sensor where the pyroelectric thin film is not separated in each element and is in contact with the substrate at both ends. Also, crosstalk was reduced by an order of magnitude, as shown in Fig. 3.
さらに、振動・音波によるセンサの出力電圧も著しく低
下した。Furthermore, the output voltage of the sensor due to vibration / sound waves also dropped significantly.
以上述べたように、本発明による焦電型赤外線アレイセ
ンサは、ＭｇＯ基板への熱拡散を抑制して高感度・低ク
ロストークを実現することができる。As described above, the pyroelectric infrared array sensor according to the present invention can suppress thermal diffusion to the MgO substrate and realize high sensitivity and low crosstalk.
発明の効果 本発明による焦電型赤外線アレイセンサは、熱拡散によ
るクロストークを低減しかつ感度の向上を図ることがで
きるばかりでなく、焦電薄膜の熱応力による薄膜のはが
れ・割れを防止できる。また有機薄膜を用いる構成によ
りセンサ部の機械的Ｑを低減でき、振動・音による雑音
を抑制することができる。EFFECTS OF THE INVENTION The pyroelectric infrared array sensor according to the present invention can not only reduce crosstalk due to thermal diffusion and improve sensitivity, but also can prevent peeling and cracking of a thin film due to thermal stress of the pyroelectric thin film. . Further, the structure using the organic thin film can reduce the mechanical Q of the sensor unit and suppress noise due to vibration and sound.
第１図(A)、(B)は本発明の一実施例における焦電型赤外
線アレイセンサの構造を示す平面図及び断面図、第２図
(a)〜(f)は本発明の一実施例における焦電型赤外線アレ
イセンサの製造方法を示す断面図、第３図は本発明の一
実施例に於ける焦電型赤外線アレイセンサのクロストー
ク特性を示すグラフである。 １……ＭｇＯ基板、２……焦電薄膜 ３……電極薄膜、４……有機薄膜 ６……取り出し電極、７……開口部 ８……第2の電極薄膜1 (A) and 1 (B) are a plan view and a sectional view showing the structure of a pyroelectric infrared array sensor in one embodiment of the present invention, and FIG.
(a) to (f) are cross-sectional views showing a method for manufacturing a pyroelectric infrared array sensor according to an embodiment of the present invention, and FIG. 3 is a cross of a pyroelectric infrared array sensor according to an embodiment of the present invention. It is a graph which shows a talk characteristic. 1 ... MgO substrate, 2 ... Pyroelectric thin film, 3 ... Electrode thin film, 4 ... Organic thin film, 6 ... Extraction electrode, 7 ... Opening part, 8 ... Second electrode thin film
Claims (6)
群と、前記焦電薄膜群上に形成された複数の分離した電
極薄膜群と、前記焦電薄膜の基板側の面に形成された第
2の電極薄膜と、前記焦電薄膜の少なくとも片面を被覆
する有機薄膜とを有し、少なくとも前記焦電薄膜と接す
る基板の一部を除去したことを特徴とする焦電型赤外線
アレイセンサ。1. A substrate, a pyroelectric thin film group formed on the substrate, a plurality of separated electrode thin film groups formed on the pyroelectric thin film group, and a substrate-side surface of the pyroelectric thin film. Formed first
2. A pyroelectric infrared array sensor, comprising: the electrode thin film of 2; and an organic thin film covering at least one surface of the pyroelectric thin film, wherein at least a part of the substrate in contact with the pyroelectric thin film is removed.
表され、 a) 0.7≦x≦1、0.9≦x+y≦1、0.95≦z≦1、w＝0 b) x＝1、y＝0、0.45≦z≦1、z+w＝1 c) 0.83≦x≦1、x+y＝1、0.5≦z≦1、 0.96≦z+w≦1 のいずれかの組成をもち、＜００１＞方向に高度に配向
していることを特徴とする特許請求の範囲第1項記載の
焦電型赤外線アレイセンサ。2. The pyroelectric thin film is represented by the chemical formula (Pb x La y ) (Ti z Zr w ) O 3 , and a) 0.7 ≦ x ≦ 1, 0.9 ≦ x + y ≦ 1, 0.95 ≦ z ≦ 1, w = 0 b) x = 1, y = 0, 0.45 ≦ z ≦ 1, z + w = 1 c) 0.83 ≦ x ≦ 1, x + y = 1, 0.5 ≦ z ≦ 1, 0.96 ≦ z + w ≦ The pyroelectric infrared array sensor according to claim 1, wherein the pyroelectric infrared array sensor has the composition of any one of 1 and is highly oriented in the <001> direction.
表され、 a) x＝1、y＝0、0.1≦z≦0.4、z+w＝1 b) 0.92≦x≦1、x+y＝1、0.3≦z≦0.45、 0.98≦z+w≦1 のいずれかの組成をもち、＜１１１＞の方向に配向して
いることを特徴とする特許請求の範囲第1項記載の焦電
型赤外線アレイセンサ。3. The pyroelectric thin film is represented by the chemical formula (Pb x La y ) (Ti z Zr w ) O 3 , and a) x = 1, y = 0, 0.1 ≦ z ≦ 0.4, z + w = 1 b ) Patents characterized by having a composition of 0.92 ≦ x ≦ 1, x + y = 1, 0.3 ≦ z ≦ 0.45, 0.98 ≦ z + w ≦ 1 and being oriented in the <111> direction The pyroelectric infrared array sensor according to claim 1.
を介して基板に支持されることを特徴とする特許請求の
範囲第1項記載の焦電型赤外線アレイセンサ。4. The pyroelectric infrared array sensor according to claim 1, wherein the pyroelectric thin film does not directly contact the substrate and is supported by the substrate via the organic thin film.
特徴とする特許請求の範囲第1項記載の焦電型赤外線ア
レイセンサ。5. The pyroelectric infrared array sensor according to claim 1, wherein the organic thin film is a polyimide resin.
され、 a) 0.7≦x≦1、0.9≦x+y≦1、0.95≦z≦1、w＝0 b) x＝1、y＝0、0.45≦z≦1、z+w＝1 c) 0.83≦x≦1、x+y＝1、0.5≦z≦1、 0.96≦z+w≦1 のいずれかの組成をもち、＜００１＞方向に高度に配向
している焦電薄膜群、あるいは、 a) x＝1、y＝0、0.1≦z≦0.4、z+w＝1 b) 0.92≦x≦1、x+y＝1、0.3≦z≦0.45、 0.98≦z+w≦1 のいずれかの組成をもち、＜１１１＞方向に配向してい
る焦電薄膜群を形成し、前記焦電薄膜上に複数の分離し
た電極薄膜を形成し、その上に有機薄膜を被覆し、前記
有機薄膜上に前記電極薄膜と接触した取り出し電極を作
製し、少なくとも前記焦電薄膜と接触する前記基板の一
部をエッチング等により取り除いて前記有機薄膜を介し
て支持した後、前記基板側から蒸着等により第2の電極
薄膜を作製することを特徴とする焦電型赤外線アレイセ
ンサの製造方法。6. A chemical formula (Pb x La y ) (Ti z Zr w ) O 3 on the substrate, a) 0.7 ≦ x ≦ 1, 0.9 ≦ x + y ≦ 1, 0.95 ≦ z ≦ 1, w = 0 b) x = 1, y = 0, 0.45 ≦ z ≦ 1, z + w = 1 c) 0.83 ≦ x ≦ 1, x + y = 1, 0.5 ≦ z ≦ 1, 0.96 ≦ z + w ≦ 1 Or a pyroelectric thin film group highly oriented in the <001> direction, or a) x = 1, y = 0, 0.1 ≦ z ≦ 0.4, z + w = 1 b) 0.92 Forming a pyroelectric thin film group having a composition of ≦ x ≦ 1, x + y = 1, 0.3 ≦ z ≦ 0.45, 0.98 ≦ z + w ≦ 1 and oriented in the <111> direction, A plurality of separated electrode thin films are formed on a pyroelectric thin film, an organic thin film is coated thereon, and a take-out electrode that is in contact with the electrode thin film is formed on the organic thin film. After removing a part of the substrate by etching or the like and supporting it through the organic thin film, a second electrode thin film is formed from the substrate side by vapor deposition or the like. Pyroelectric infrared array manufacturing method of the sensor, characterized by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62149653A JPH0658261B2 (en) | 1987-06-16 | 1987-06-16 | Pyroelectric infrared array sensor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62149653A JPH0658261B2 (en) | 1987-06-16 | 1987-06-16 | Pyroelectric infrared array sensor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63313023A JPS63313023A (en) | 1988-12-21 |
| JPH0658261B2 true JPH0658261B2 (en) | 1994-08-03 |
Family
ID=15479925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62149653A Expired - Fee Related JPH0658261B2 (en) | 1987-06-16 | 1987-06-16 | Pyroelectric infrared array sensor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0658261B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2584124B2 (en) * | 1990-11-01 | 1997-02-19 | 松下電器産業株式会社 | Pyroelectric infrared detector and method of manufacturing the same |
| US5558905A (en) * | 1994-03-08 | 1996-09-24 | The United States Of America As Represented By The Secretary Of The Army | Method of making a pyroelectric film sensing device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180180A (en) * | 1984-02-27 | 1985-09-13 | Matsushita Electric Ind Co Ltd | Infrared detection element |
-
1987
- 1987-06-16 JP JP62149653A patent/JPH0658261B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63313023A (en) | 1988-12-21 |
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