JPH0663101B2 - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH0663101B2 JPH0663101B2 JP11158688A JP11158688A JPH0663101B2 JP H0663101 B2 JPH0663101 B2 JP H0663101B2 JP 11158688 A JP11158688 A JP 11158688A JP 11158688 A JP11158688 A JP 11158688A JP H0663101 B2 JPH0663101 B2 JP H0663101B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma
- grounded
- grounded electrode
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 description 31
- 239000004744 fabric Substances 0.000 description 18
- 238000004804 winding Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010073 coating (rubber) Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- -1 CF 2 Cl 2 Chemical class 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、長尺物体の連続的プラズマ処理装置に関す
る。更に詳しくは、膜、フイルム、シート、布、繊維等
の長尺物体、特に平面状あるいは比較的厚さが小さく、
幅の大きい長尺被処理物(以下処理布帛ということがあ
る)のプラズマ処理を連続的に行なうための装置に関す
る。Description: TECHNICAL FIELD The present invention relates to a continuous plasma processing apparatus for an elongated object. More specifically, a long object such as a film, a film, a sheet, a cloth, and a fiber, particularly a flat object or a relatively small thickness,
The present invention relates to an apparatus for continuously performing a plasma treatment on a long object to be treated (hereinafter sometimes referred to as treated cloth) having a large width.
(従来の技術) プラズマ処理装置、特に平面状アート状物や長尺物のプ
ラズマ処理装置としては、従来数多くの提案がなされて
いる。例えば、特公昭60−11,149号、同60−31,939号各
公報には、大面積の一対の対向電極の間に布帛を通して
処理するプラズマ処理装置が提案さており、また特開昭
60−134,061号、同61−228,028号、特公昭60−59,251
号、同61−36,862号各公報には、複数個の非接地電極を
円筒状接地電極の周りに配設したプラズマ処理装置が提
案されている。さらに特公昭60−11,150号、同60−54,4
28号各公報には、多層化平行平板電極を有するプラズマ
処理装置の提案がある。(Prior Art) Many proposals have hitherto been made as a plasma processing apparatus, particularly a plasma processing apparatus for a planar art-like object or a long object. For example, Japanese Patent Publication Nos. 60-11,149 and 60-31,939 each propose a plasma processing apparatus in which a cloth is processed between a pair of counter electrodes having a large area.
60-134,061, 61-228,028, Japanese Patent Sho 60-59,251
JP-A-61-36,862 and JP-A-61-36,862 propose a plasma processing apparatus in which a plurality of non-grounded electrodes are arranged around a cylindrical grounded electrode. Furthermore, Japanese Patent Publications Sho 60-11,150, and Sho 60-54,4
Each of the 28 publications proposes a plasma processing apparatus having a multilayer parallel plate electrode.
(本発明が解決しようとする課題) しかし乍ら、上記特公昭60−11,149号、同60−31,939号
各公報の提案は、大面積の電極面における処理程度の局
部的バラツキによる不均一処理や、電極の上下、左右空
間にプラズマ放電が発生することによる処理効率の低下
等の問題がある。また前記特開昭60−134,061号公報そ
の他の提案においては、電極の処理面積を余り大きくす
ることができず、また非接地電極周りでの放電ロスが避
けられない。前記特公昭60−11,150号、同60−54,428号
各公報の提案では、多層化した各電極上で高周波等の位
相にズレを生じ、電極間で相互干渉して、安定した運転
および品質を得る上に問題がある。(Problems to be solved by the present invention) However, the proposals of the above Japanese Patent Publication Nos. 60-11,149 and 60-31,939 disclose the non-uniform treatment due to local variations in the degree of treatment on an electrode surface of a large area. However, there is a problem that the processing efficiency is lowered due to the generation of plasma discharge in the upper and lower spaces of the electrodes and the left and right spaces. Further, in the above-mentioned Japanese Patent Application Laid-Open No. 60-134,061 and other proposals, the treated area of the electrode cannot be made too large, and discharge loss around the non-grounded electrode cannot be avoided. According to the proposals of Japanese Patent Publication Nos. 60-11,150 and 60-54,428, a phase shift of high frequency occurs on each of the multi-layered electrodes, mutual interference between the electrodes, and stable operation and quality are obtained. I have a problem above.
このように従来公知のプラズマ処理装置の、いずにも運
転の安定性、品質の均一性、および投入電力に対する処
理効率のすべてを充分満足し得るものはない。As described above, none of the conventionally known plasma processing apparatuses can sufficiently satisfy all of the operation stability, the quality uniformity, and the processing efficiency with respect to the input power.
本発明者等は、こら従来提案された装置の欠点を解消す
べく、真空容器とその中に配設された平面状処理表面を
有する複数個の非接地電極と該非接地電極処理表面に対
向して設けられた接地電極とよりなり、被処理物を上記
非接地電極と接地電極との間に通すための案内手段を具
備したプラズマ処理装置を曩に特願昭62−33,442号とし
て提案した。この提案になる装置は従来公知の装置に付
帯する種々の技術的課題の多くを解決することに成功し
たが、引続き研究を重ねた結果、装置のコンパクト化、
処理効率の向上等の面において尚改良の必要を見出し、
本発明を完成するに至った。In order to solve the drawbacks of the conventionally proposed device, the present inventors have opposed a non-grounded electrode having a vacuum container and a planar processed surface disposed in the vacuum container and the non-grounded electrode processed surface. As a Japanese Patent Application No. 62-33,442, there was proposed a plasma processing apparatus comprising a grounding electrode provided as a reference numeral and provided with a guiding means for passing an object to be processed between the non-grounding electrode and the grounding electrode. The proposed device succeeded in solving many of the various technical problems associated with the conventionally known device, but as a result of continued research, the device was made compact.
Finding the need for further improvement in terms of improving processing efficiency,
The present invention has been completed.
本発明の目的とするところは、複数個の電極を有しなが
ら、各電極間でプラズマの相互干渉が発生せず、かつ電
極周辺部の不用有害なプラズマ放電を極力抑えたプラズ
マ処理装置を提供するにある。また別の目的は、より安
定した運転ができ、かつ高品位で均一な被処理物をより
効率よく製造できる装置を提供するにある。An object of the present invention is to provide a plasma processing apparatus that has a plurality of electrodes, does not cause mutual interference of plasma between the electrodes, and suppresses unnecessary and harmful plasma discharge in the electrode peripheral portion as much as possible. There is. Another object is to provide an apparatus which can be operated more stably and which can efficiently produce a high-quality and uniform object to be treated.
(課題を解決するための手段) 本発明は、真空容器とその中に放射状に配設された平面
状処理表面を有する複数個の非接地電極と該非接地電極
処理表面に対向して設けられた接地電極とよりなり、被
処理物を上記非接地電極と接地電極との間に通すための
案内手段を具備したプラズマ処理装置において、外気と
連通し且つ電力導入部を内蔵する制限空間を上記非接地
電極群の中央部に配し、かつ前記非接地電極はその一端
を上記制限空間を画する壁を貫いて前記電力導入部にそ
れぞれ連結したことを特徴とするプラズマ処理装置であ
る。(Means for Solving the Problem) The present invention is provided with a vacuum container, a plurality of non-grounded electrodes having a planar processed surface radially arranged therein, and a non-grounded electrode facing each other. In a plasma processing apparatus comprising a ground electrode and having a guide means for passing an object to be processed between the non-ground electrode and the ground electrode, a limited space communicating with the outside air and having a built-in power introduction unit is provided. In the plasma processing apparatus, the non-ground electrode is arranged in the center of the ground electrode group, and one end of the non-ground electrode is connected to the power introducing unit through the wall defining the restricted space.
本発明で適用される被処理物として膜、フイルム、シー
トおよび布あるいは繊維、糸等の長尺状、平面状あるい
は比較的厚さが薄い物であれば特に限定されない。The object to be treated according to the present invention is not particularly limited as long as it is a film, a film, a sheet and a cloth, a fiber, a thread or the like having a long shape, a flat shape or a relatively thin thickness.
以下添付図面に示す実施態様について本発明を詳述す
る。The present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings.
第1図は本発明装置の一具体例の要部を示す概要正面
図、第2図はその全体を示す概要正面図、また第3図は
第2図の概要側面図である。FIG. 1 is a schematic front view showing a main part of a specific example of the device of the present invention, FIG. 2 is a schematic front view showing the whole thereof, and FIG. 3 is a schematic side view of FIG.
第1図および第2図において、プラズマ処理室を画する
真空容器1中には、非接地電極9群の中心に匣体または
筒体28で区画された制限空間4が設けられる。制限空間
4は真空容器1の前後またはそれらのいずれかにおいて
外気と連通し、電力導入部6を内蔵する。In FIG. 1 and FIG. 2, a restricted space 4 defined by a box or cylinder 28 is provided at the center of a group of non-grounded electrodes 9 in a vacuum container 1 that defines a plasma processing chamber. The restricted space 4 communicates with the outside air either before or after the vacuum container 1 or in any of them, and incorporates a power introduction unit 6.
該電力導入部より延びる複数個の電極連結部材7は、制
限空間4を画する匣体または筒体28の壁を貫いて、その
貫通端8が放射状に配置された複数個の非接地電極9を
支持するとともに電力導入部6と各非接地電極とを電気
的に接続する。電極連結部材7は、絶縁材11により匣体
または筒体28の壁に電気的に絶縁し且つ気密に支承され
るとともに、電力導入部6は高周波電源からの端子5と
カップリングされる。A plurality of electrode connecting members 7 extending from the power introducing portion penetrate a wall of the box or cylinder 28 that defines the restricted space 4, and a plurality of non-ground electrodes 9 whose penetrating ends 8 are radially arranged. And electrically connect the power introducing unit 6 and each non-grounded electrode. The electrode connecting member 7 is electrically insulated and airtightly supported on the wall of the box or cylinder 28 by the insulating material 11, and the power introduction part 6 is coupled to the terminal 5 from the high frequency power supply.
電力導入部6は匣体または筒体28によって画される制限
空間4の中心に位置し、該電力導入部6から延びて匣体
または筒体の壁に達する電極連結部材7はすべて等長で
等角度放射状配置にあることが最も好ましい。また匣体
または筒体の壁より各非接地電極9へ至る貫端8の長さ
を極力短くし、それぞれ等しくすること、それらの表面
を絶縁被覆すること、および非接地電極9を等角度放射
状配置にすることが同様に最も好ましい。前記制限空間
31の大きさおよび長さ、即ち、匣体、筒体の寸法は、上
記貫通端8の長さを極力短く保持する限り、装置の目
的、形状およびプラズマ処理室内へ導入するガス、水そ
の他の配管の種類、数により任意に設定し得る。The power introduction part 6 is located at the center of the restricted space 4 defined by the box or cylinder 28, and the electrode connecting members 7 extending from the power introduction part 6 and reaching the wall of the box or cylinder are all of equal length. Most preferably it is in an equiangular radial arrangement. Further, the lengths of the penetrating ends 8 extending from the wall of the box or the cylindrical body to the respective non-grounded electrodes 9 should be made as short as possible, and the lengths should be equal to each other, the surfaces thereof should be insulated and covered, and the non-grounded electrodes 9 should be formed in an equal angle radial pattern. The arrangement is also most preferred. The restricted space
The size and length of 31, that is, the dimensions of the box and the cylinder, as long as the length of the penetrating end 8 is kept as short as possible, the purpose of the apparatus and the shape of gas, water, etc. to be introduced into the plasma processing chamber. It can be set arbitrarily depending on the type and number of pipes.
非接地電極9は平面状処理表面を有し、表裏両面のなす
角度は特に限定されないが、後述の案内手段によって案
内される走行処理布帛を電極面に平行となし易い適宜な
角度とする。電極連結部材7と非接地電極9とは必ずし
も同軸上にあるを要しない。しかしながら、電極連結部
材7から各非接地電極9までの電気抵抗および距離を等
しくすることが電力配分のバランスという点で好まし
い。The non-grounded electrode 9 has a planar treated surface, and the angle formed between the front and back surfaces is not particularly limited, but the traveling treated cloth guided by the guide means described later is set at an appropriate angle so as to be easily parallel to the electrode surface. The electrode connecting member 7 and the non-grounded electrode 9 do not necessarily have to be coaxial. However, it is preferable that the electric resistance and the distance from the electrode connecting member 7 to each non-grounded electrode 9 are equal in terms of balance of power distribution.
平面状接地電極10は、非接地電極9の両面に、それぞれ
対向して装設される。接地電極10と非接地電極9とは互
いに平行に、等距離はなれて設置する方が好ましい。電
極間距離は、入力エネルギー、電極形状、真空度、処理
速度およびプラズマエッチングか、プラズマ重合か、プ
ラズマCVDか、という処理方法により異なるが、一般的
に真空度が小さく、入力エネルギーが小さい場合は狭く
する方がよく、通常10cm以下、好ましくは5cmである。
例えば酸素プラズマの場合で真空度が1mmHg程度では、
0.5〜3cm程度が効果的である。非接地電極9および接地
電極10の材質は導電性の高い金属、例えばアルミニウ
ム、銅、鉄、ステンレス銅およびそれらの各種金属メッ
キ物などが好ましい。形状としては平板、パンチング板
あるいはメッシュ(金網)等使用できるが、入力電力が
0.1W/cm2以上では、孔、凹凸のない平板が好ましい。The planar ground electrodes 10 are provided on both surfaces of the non-ground electrode 9 so as to face each other. It is preferable to install the ground electrode 10 and the non-ground electrode 9 in parallel with each other at equal distances. The distance between the electrodes varies depending on the input energy, electrode shape, degree of vacuum, processing speed, and processing method such as plasma etching, plasma polymerization, or plasma CVD, but generally when the degree of vacuum is small and the input energy is small, It is better to narrow it, and it is usually 10 cm or less, preferably 5 cm.
For example, in the case of oxygen plasma, if the vacuum degree is about 1 mmHg,
0.5 to 3 cm is effective. The material of the non-grounded electrode 9 and the grounded electrode 10 is preferably a metal having high conductivity, such as aluminum, copper, iron, stainless copper and various metal plated products thereof. The shape can be flat plate, punching plate or mesh (wire mesh), but the input power is
At 0.1 W / cm 2 or more, a flat plate having no holes or irregularities is preferable.
非接地電極9および接地電極10は内部に温調用媒体の通
路を設けて温調可能、殊に冷却可能にすることが好まし
い。媒体としては流動性のあるものならばすべて使用し
うるが、電気的に絶縁物である純水、有機溶媒や各種熱
交換用のガス、蒸気が好ましい。また温調装置あるいは
冷却装置としては、第3図に示すように路24,25を経て
冷媒の通った蛇管あるいはジャケットを電極に設置する
のが好ましい。非接地電極を温調することにより、各種
プラズマ処理(例えばプラズマ重合、プラズマCVD、プ
ラズマエッチング等)に応じた最も適切な温度に基板温
度を設定できる。こうして非接地電極の温度を任意に設
定できることと、それによって処理試料を非接地電極上
に接触できることにより長時間にわたって安定な処理が
可能となる。It is preferable that the non-grounded electrode 9 and the grounded electrode 10 are provided with a passage for a temperature adjusting medium therein so that the temperature can be adjusted, and in particular, they can be cooled. Any medium can be used as long as it has fluidity, but pure water, which is an electrically insulating material, an organic solvent, various heat exchange gases, and steam are preferable. As the temperature control device or the cooling device, it is preferable to install a flexible pipe or a jacket through which the refrigerant passes through the channels 24 and 25 as shown in FIG. By controlling the temperature of the non-grounded electrode, the substrate temperature can be set to the most appropriate temperature according to various plasma treatments (eg plasma polymerization, plasma CVD, plasma etching, etc.). In this way, the temperature of the non-grounded electrode can be arbitrarily set and the sample to be treated can be brought into contact with the non-grounded electrode, so that stable treatment can be performed for a long time.
第2図および第3図に示すように、この具体例において
は、真空容器1は通路15,15′を介してそれぞれ真空容
器2,3と連通し、真空容器1は、その中に上述のように
電極を配設したプラズマ処理室となし、真空容器2,3内
には処理布帛供給ローラー18と巻取りローラー19とを個
別に収納する。このようにして供給ローラー18と巻取り
ローラー19の各占有空間を真空容器1の外部に設けるこ
とによって真空容器1内に配設する電極の数を増加し、
プラズマ処理能力を増大させることができる。As shown in FIGS. 2 and 3, in this embodiment, the vacuum vessel 1 communicates with the vacuum vessels 2 and 3, respectively, via passages 15 and 15 ', the vacuum vessel 1 having the above-mentioned structure therein. Thus, the plasma processing chamber is provided with electrodes, and the processing cloth supply roller 18 and the winding roller 19 are separately housed in the vacuum containers 2 and 3. In this way, by providing the respective occupied spaces of the supply roller 18 and the winding roller 19 outside the vacuum container 1, the number of electrodes arranged in the vacuum container 1 is increased,
Plasma throughput can be increased.
供給ローラー18と巻取りローラー19とは電動機26の連結
機構を適宜双方間で反転駆動可能となすことにより、リ
バーシブルとすることは好ましいことである。It is preferable that the supply roller 18 and the take-up roller 19 are reversible by appropriately enabling the connection mechanism of the electric motor 26 to be reversed between them.
真空容器1内にはまた、供給ローラー18から供給される
布帛12を接地電極と非接地電極との間の空隙へ順次導
き、巻取りローラー19へ送り出すための案内手段、例え
ばガイドバー、ガイドローラー等13,14が、各電極基部
および先端部近傍の適宜な位置に配設される。これら案
内手段は固定ロール、従動ロール、駆動ロールあるいは
それらの組合せを布帛の目付け、走行速度、テンション
等の条件により適宜に用いることができ、処理布帛が非
接地電極または接地電極面に極力近接し、好ましくは摺
接して走行し得るよう調整して配設することがよい。In the vacuum container 1, guide means for guiding the cloth 12 supplied from the supply roller 18 sequentially to the gap between the ground electrode and the non-ground electrode and sending it to the winding roller 19, for example, a guide bar or a guide roller. Etc. 13 and 14 are arranged at appropriate positions in the vicinity of each electrode base and the tip. As these guide means, a fixed roll, a driven roll, a drive roll or a combination thereof can be appropriately used depending on the conditions such as fabric weight, running speed, tension, etc., and the treated fabric should be as close as possible to the non-grounded electrode or the grounded electrode surface. It is preferable to arrange them so that they can run in sliding contact.
処理布帛をプラズマ空間を走行させるためのローラー1
3,14の材質は、処理布帛に比べてエッチング性の小さ
い、耐熱性にすぐれた、例えば金属、セラミック、金属
コーティングセラミックあるいはNBR、シリコーン等の
ゴムコーティング等がよい。またローラーは接地されて
いる方がよい。ローラーの表面は、処理布帛のスリップ
を防止する為に、鏡面加工のものが好ましい。更に好ま
しくは、被処理物の走行安定性、加熱防止の為に、シリ
コーンゴム、NBRゴム、SBRゴム、フッ素ゴム等、ゴムコ
ーティングあるいはゴムチューブで被覆したものがよ
い。Roller for running treated fabric in plasma space 1
The material of 3,14 is preferably a metal, a ceramic, a metal-coated ceramic, or a rubber coating such as NBR or silicone, which has a smaller etching property than the treated cloth and is excellent in heat resistance. Also, the rollers should be grounded. The surface of the roller is preferably mirror-finished in order to prevent the treated cloth from slipping. More preferably, a silicone rubber, NBR rubber, SBR rubber, fluororubber, or the like coated with a rubber coating or a rubber tube is preferable for the running stability of the object to be treated and prevention of heating.
真空容器内の非接地電極、接地電極、処理布帛案内手
段、電力導入部等の主要構成部材は、フレーム27に支承
されるとともに、接地電極を相互に結んだカバーにより
被覆して一体となすことができ、また供給ローラー18、
巻取りローラー19はそれぞれフレーム20,20′に支承さ
れ、ガイドレール17を走行して真空容器に装脱可能とな
し得る。Main components such as the non-grounded electrode, grounded electrode, processing cloth guiding means, and power introduction section in the vacuum container are supported by the frame 27, and the grounded electrodes are covered with a cover that connects them to each other to be integrated. Can also supply roller 18,
The take-up roller 19 is supported by the frames 20 and 20 ', respectively, and can run on the guide rail 17 so as to be detachable from the vacuum container.
前記カバーの材質は絶縁物でも導電性物質でもよいが、
好ましくは電極材料と同質のもの、例えばステンレス、
アルミニウム、銅板等であり、更に好ましくは中央部に
プラズマ空間を監視できる透視窓を有するのがよい。透
視窓の材質は、透視可能ならば有機物でも無機物でもよ
いが、耐プラズマ性、耐熱性にすぐれた無機質、例えば
ガラス、無機結晶等がよい。またカバーは接地されてい
る方がよく、この場合カバーと非接地電極4の間隔は、
プラズマの安定性、均一性の点で、接地電極と非接地電
極の間隔より大きい方がよい。The material of the cover may be an insulating material or a conductive material,
Preferably the same material as the electrode material, such as stainless steel,
The plate is made of aluminum, copper plate, or the like, and more preferably has a see-through window in the center for monitoring the plasma space. The material of the see-through window may be an organic substance or an inorganic substance as long as it can be seen through, but an inorganic substance having excellent plasma resistance and heat resistance, such as glass or inorganic crystal, is preferable. The cover is preferably grounded, and in this case, the distance between the cover and the non-grounded electrode 4 is
In terms of plasma stability and uniformity, it is preferable that the distance between the grounded electrode and the non-grounded electrode is larger than that.
真空容器は、内外圧差少なくとも1気圧に耐えるもので
あればその形状・寸法は特に限定されないが、ガス導入
孔23と真空ポンプに通ずる排気孔22とを具え、上記主要
構成部材等の内容物を装脱するための開閉装置を有し、
好ましくは内容物モニタリング用の透視窓を具備する。
ガス導入孔23のガス吹出し口の形状は、細長いスリツト
状か小孔を多数有するものが、またガス吹出し口は電極
の全幅に亘って存在することが導入ガスと分解ガスの比
率にムラがなくなり、安定した処理効果が得られ好まし
い。ガス導入配管の材質は、プラスチック等有機物も使
用しうるが、長期に亘り安定して使用するためには、化
学的に安定で耐プラズマ性が高く、高温に耐える金属、
例えばステンレス管、銅管、アルミニウム管あるいはガ
ラス管等が好ましい。The shape and size of the vacuum container are not particularly limited as long as it can withstand an internal / external pressure difference of at least 1 atm. However, the vacuum container is provided with a gas introduction hole 23 and an exhaust hole 22 communicating with a vacuum pump. It has a switchgear for loading and unloading,
It preferably comprises a see-through window for monitoring the contents.
The shape of the gas outlet of the gas introduction hole 23 is elongated slit-like or has a large number of small holes, and the fact that the gas outlet exists over the entire width of the electrode eliminates unevenness in the ratio of the introduced gas and the decomposed gas. A stable treatment effect is obtained, which is preferable. As the material of the gas introduction pipe, an organic substance such as plastic may be used, but in order to use it stably for a long period of time, it is chemically stable, has high plasma resistance, and a metal that can withstand high temperatures,
For example, a stainless tube, a copper tube, an aluminum tube or a glass tube is preferable.
真空容器2,3は合体して単一の容器となし、布帛供給ロ
ーラー18と巻取りローラー19とを一緒に収容し、真空容
器1と1個の通路で連通させることも出来る。The vacuum containers 2 and 3 may be combined to form a single container, and the cloth supply roller 18 and the winding roller 19 may be housed together, and the vacuum container 1 and the vacuum container 1 may be communicated with each other through a single passage.
真空容器1は更に処理布帛の供給ローラーと、電動機な
どによって駆動される巻取りローラーとを放射状電極対
間の空間に具えるよう設計することができる。The vacuum vessel 1 can be further designed to include a supply roller for the treated cloth and a winding roller driven by an electric motor or the like in the space between the radial electrode pairs.
(作用) 本発明装置の図示の例にあっては、真空容器2の布帛は
供給ローラー18から、ガイドローラー16で走行経路を規
制され、通路15を通って真空容器1へ入り、電極間隙を
通過した後、通路15′よりガイドローラ17に案内されて
巻取りローラー19に巻取られる。(Operation) In the illustrated example of the device of the present invention, the cloth of the vacuum container 2 has its travel route regulated from the supply roller 18 by the guide roller 16 and enters the vacuum container 1 through the passage 15 so that the electrode gap is maintained. After passing, it is guided by the guide roller 17 through the passage 15 'and wound up by the winding roller 19.
プラズマ用の電力の導入は、電力導入部6により集中的
に行なう。各非接地電極9へは電力導入部6より電極連
結部材7および貫通端8を通じて電力の導入を行なう。
又、電源は電力導入部が1ケ所であるために、単一の電
源を使用でき複数個の電源を使った時の各電源間の発振
周波数等のズレによる高周波の相互干渉、プラズマのア
ンバランスは殆どなくなる。The introduction of electric power for plasma is intensively performed by the electric power introduction unit 6. Electric power is introduced to each non-grounded electrode 9 from the electric power introducing portion 6 through the electrode connecting member 7 and the penetrating end 8.
In addition, since there is only one power supply in the power supply, a single power supply can be used, and when multiple power supplies are used, mutual interference of high frequencies due to deviation of the oscillation frequency between each power supply, plasma imbalance, etc. Is almost gone.
非接地電極9には、プラズマ発生用の50Hz、60Hzの商業
用周波数、キロヘルツの低周波数およびメガヘルからギ
ガヘルツ領域の高周波数の電力を導入して、接地電極と
の間で低温ガスプラズマを発生させる。The non-grounded electrode 9 is supplied with plasma commercial frequencies of 50 Hz and 60 Hz, low frequency of kilohertz and high frequency power of megahertz to gigahertz region to generate low temperature gas plasma between the non-grounded electrode 9 and the ground electrode. .
低温ガスプラズマの安定した発生のためには、数KHzか
ら数百KHzの低周波あるいは高周波が好ましいが、13.56
MHzの高周波が処理効率、処理コスト等の点で特に好ま
しい。又、低周波あるいは高周波の入力エネルギーは電
極形状、電極間距離、真空度、処理速度等によって変化
するが、通常単位面積当り0.01W/cm2以上、好ましく
は0.2〜10W/cm2、更に好ましくは0.1〜1W/cm2であ
る。For stable generation of low-temperature gas plasma, a low frequency or high frequency of several KHz to several hundred KHz is preferable.
A high frequency of MHz is particularly preferable in terms of processing efficiency and processing cost. Further, low frequency or high frequency input energy electrode shape, distance between the electrodes, the degree of vacuum, will vary with the processing speed, etc., per normal unit area 0.01 W / cm 2 or more, preferably 0.2~10W / cm 2, more preferably Is 0.1 to 1 W / cm 2 .
低温ガスプラズマを発生させるガスとしては、酸素、窒
素、アルゴン、ヘリウム、水素等の非重合性ガスやメタ
ン、エタン、プロパン、ブタンあるいはベンゼン、アク
リル酸、スチレン等の重合性有機モノモーガスを用いる
ことが出来、目的に応じて選択する。As the gas for generating the low-temperature gas plasma, a non-polymerizable gas such as oxygen, nitrogen, argon, helium, or hydrogen, or a polymerizable organic monomeric gas such as methane, ethane, propane, butane, benzene, acrylic acid, or styrene may be used. You can choose it according to your purpose.
ポリエステル繊維等のプラズマエッチングには、酸素、
空気、窒素、アルゴン、水素、炭酸ガス、ヘリウムやCF
4,CF2Cl2,CFCl3,CHF3等のハロゲン化炭化水素およ
び誘導体の単独あるいは混合ガスが使用できる。For plasma etching of polyester fiber etc., oxygen,
Air, nitrogen, argon, hydrogen, carbon dioxide, helium and CF
4 , halogenated hydrocarbons such as CF 2 Cl 2 , CFCl 3 and CHF 3 and derivatives thereof can be used alone or as a mixed gas.
プラズマ空間の真空度は、低温ガスプラズマが安定して
発生する領域、すなわち常0.01〜10mmHg、好ましくは0.
1〜5mmHg、更に好ましくは0.2〜1mmHgに調整する。真空
度の調整は排気速度と共にガスあるいはモノマーガスの
導入により行なう事が出来るが、目的とする処理を好ま
しく行なう為には、導入ガスの調整による。The degree of vacuum of the plasma space is a region where low-temperature gas plasma is stably generated, that is, 0.01 to 10 mmHg, preferably 0.
It is adjusted to 1 to 5 mmHg, more preferably 0.2 to 1 mmHg. The degree of vacuum can be adjusted by introducing a gas or a monomer gas together with the evacuation rate, but in order to preferably perform the intended treatment, the introduced gas is adjusted.
ガスの導入は、ガス導入管23を通じて、被処理物の処理
面側に吹き出すことが好ましい。このことにより、被処
理物の処理面には常に新しい導入ガスが接触し、さらに
プラズマ処理により発生した分解ガスは、効率的にプラ
ズマ空間より排出される。導入ガスの分解ガスに対する
比は少なくとも1、好ましくは2以上、更に好ましくは
4以上である。プラズマ処理の効率化および異種反応の
防止には導入ガスをいかに効率よくプラズマ化し被処理
物表面に当てるかおよび分解ガスをいかに効率よく被処
理物表面より除去・排出するかに大きく影響される。接
地電極相互間を結だカバーは導入ガスおよび分解ガスを
効率よく置換する作用をなす。The gas is preferably introduced through the gas introduction pipe 23 to the processing surface side of the object to be processed. As a result, the new introduced gas is always in contact with the treated surface of the object to be treated, and the decomposed gas generated by the plasma treatment is efficiently discharged from the plasma space. The ratio of introduced gas to decomposed gas is at least 1, preferably 2 or more, and more preferably 4 or more. In order to improve the efficiency of plasma treatment and prevent different kinds of reactions, how efficiently the introduced gas is made into plasma and applied to the surface of the object to be treated and how efficiently the decomposed gas is removed and discharged from the surface of the object to be treated are greatly influenced. The cover connecting the ground electrodes mutually functions to efficiently replace the introduced gas and the decomposed gas.
本発明において処理布帛12は接地電極10と非接地電極9
の間、好ましくは接地電極あるいは非接地電極表面の近
傍に、更に好ましくは接地電極あるいは非接地電極の表
面に接触させ、特に好ましくは非接地電極表面に接触さ
せる。被処理物を非接地電極に接触させた場合、プラズ
マエッチング効果が大きくなるがこれは次のような理由
と思われる。In the present invention, the treated cloth 12 includes the ground electrode 10 and the non-ground electrode 9
In between, preferably in contact with the surface of the ground electrode or the non-ground electrode, more preferably in contact with the surface of the ground electrode or the non-ground electrode, particularly preferably in contact with the surface of the non-ground electrode. When the object to be processed is brought into contact with the non-grounded electrode, the plasma etching effect is increased, which is considered to be due to the following reason.
プラズマ特に低周波および高周波電位の印加による低温
プラズマにおいては、プラズマ空間にセルフバイアスが
発生するが、そのセルフバイアスの生成領域では質量の
大きなイオンの運動エネルギーが極めて大きく、従って
その空間で処理することによって極めて処理速度、処理
効果を増大させ得る。Plasma, especially in low temperature plasma due to application of low-frequency and high-frequency potential, self-bias is generated in the plasma space, but the kinetic energy of large-mass ions is extremely large in the self-bias generation region, and therefore processing must be performed in that space. The processing speed and processing effect can be extremely increased by the above.
被処理物を連続的に処理することも、走行、ストップ処
理の繰り返しも可能である。It is possible to continuously process the object to be processed, or to repeat running and stop processing.
本発明装置の好適な実施態様を整理して、以下に記す。A preferred embodiment of the device of the present invention will be summarized and described below.
(イ)接地電極表面が平面状である請求項記載の装置。(A) The device according to claim 1, wherein the ground electrode surface is flat.
(ロ)非接地電極表面と接地電極表面が等距離に対向す
る請求項記載の装置。(B) The device according to claim 1, wherein the surface of the non-grounded electrode and the surface of the grounded electrode face each other at an equal distance.
(ハ)非接地電極表面及び/又は接地電極表面が温調可
能である請求項記載の装置。(C) The device according to claim 1, wherein the surface of the non-grounded electrode and / or the surface of the grounded electrode can be temperature-controlled.
(ニ)被処理物が非接地電極の表面に接触するよう案内
手段を配設する請求項記載の装置。(D) The apparatus according to claim 1, wherein the guide means is arranged so that the object to be processed comes into contact with the surface of the non-grounded electrode.
(ホ)被処理物が接地電極の表面に接触するよう案内手
段を配設する請求項記載の装置。(E) The apparatus according to claim 1, wherein the guide means is arranged so that the object to be processed comes into contact with the surface of the ground electrode.
(発明の効果) 本発明によるプラズマ処理装置では、電力導入部から非
接地電極までの距離を等しくとることが出来るために、
複数個の非接地電極に各々同一位相の電力を導入するこ
とが出来るようになった。(Effects of the Invention) In the plasma processing apparatus according to the present invention, since the distance from the power introducing portion to the non-grounded electrode can be made equal,
It has become possible to introduce electric power of the same phase to a plurality of non-grounded electrodes.
又、各電極への電力導入部を統一出来たために単一の電
源で済むようになった。従って、従来の多層化電極を有
するプラズマ処理装置に見られた複数の電極間でのプラ
ズマの相互干渉および複数の電源間での相互干渉が防止
でき、安定した運転、安定した品質が得られるようにな
った。特にプラズマ処理室内部に配した制限空間内の電
力導入部から非接地電極に電極連結部材の貫通端を経て
最短距離を以って電力を投入できるために、必要なプラ
ズマ処理空間以外における不用放電、例えば電極連結部
材間の放電、それによる機材の損傷等、従来経験された
不都合が極端に減少する。Also, since the power supply to each electrode can be unified, a single power supply is required. Therefore, it is possible to prevent the mutual interference of the plasma between the plurality of electrodes and the mutual interference between the plurality of power sources, which are seen in the plasma processing apparatus having the conventional multi-layered electrode, so that stable operation and stable quality can be obtained. Became. In particular, since unnecessary power can be supplied to the non-grounded electrode from the power introduction part in the restricted space inside the plasma processing chamber to the non-grounded electrode through the penetrating end of the electrode connecting member, unnecessary discharge in other than the required plasma processing space. In the meantime, the inconveniences experienced in the past, such as discharge between the electrode connecting members and damage to equipment due to the discharge, are significantly reduced.
又、非接地電極周囲の空間が従来のものよりずっと狭く
なっておりこの部分での不用なプラズマ放電が低減で
き、投入電力がより効率的に使用されるようになった。Further, the space around the non-grounded electrode is much narrower than the conventional one, and unnecessary plasma discharge in this portion can be reduced, so that the input power can be used more efficiently.
以上述べたように、本発明装置により従来の装置に比べ
て大幅なコストダウン、高品質、高安定なプラズマ処理
装置およびプラズマ処理物が提供出来る。As described above, the apparatus of the present invention can provide a plasma processing apparatus and a plasma processing product that are significantly cost-effective, high-quality, and highly stable as compared with the conventional apparatus.
第1図は本発明装置の一具体例の要部を示す概要正面
図、 第2図はその全体を示す概要正面図、また 第3図は第2図の概要側面図である。 1,2,3……真空容器、4……制限空間 5……端子、6……電力導入部 7……電極連結部材、8……貫通端 9……非接地電極、10……接地電極 11……絶縁材、12……布帛 13,14……ガイドロール、15,15′……通路 16,17……ガイドロール、18……供給ローラー 19……巻取りローラー、20,20′……フレーム 21……ガイドレール、22……排気孔 23……ガス導入孔、24,25……温調用媒体通路 26……電動機、27……フレーム 28……匣体または筒体FIG. 1 is a schematic front view showing a main part of a specific example of the device of the present invention, FIG. 2 is a schematic front view showing the whole thereof, and FIG. 3 is a schematic side view of FIG. 1,2,3 ... Vacuum container, 4 ... Restricted space 5 ... Terminal, 6 ... Power introduction part 7 ... Electrode connecting member, 8 ... Penetration end 9 ... Ungrounded electrode, 10 ... Grounded electrode 11 ... Insulation material, 12 ... Cloth 13,14 ... Guide roll, 15,15 '... Passage 16,17 ... Guide roll, 18 ... Supply roller 19 ... Winding roller, 20, 20' ... … Frame 21 …… Guide rail, 22 …… Exhaust hole 23 …… Gas inlet hole, 24,25 …… Medium passage for temperature control 26 …… Electric motor, 27 …… Frame 28 …… Box or cylinder
Claims (1)
面状処理表面を有する複数個の非接地電極と該非接地電
極処理表面に対向して設けられた接地電極とよりなり、
被処理物を上記非接地電極と接地電極との間に通すため
の案内手段を具備したプラズマ処理装置において、外気
と連通し且つ電力導入部を内蔵する制限空間を上記非接
地電極群の中央部に配し、かつ前記非接地電極はその一
端を上記制限空間を画する壁を貫いて前記電力導入部に
それぞれ連結したことを特徴とするプラズマ処理装置。1. A vacuum container, a plurality of non-grounded electrodes having a planar processing surface radially arranged therein, and a ground electrode provided facing the non-grounding electrode processing surface,
In a plasma processing apparatus having a guide means for passing an object to be processed between the non-grounded electrode and the grounded electrode, a restricted space communicating with the outside air and containing a power introduction part is provided in the central part of the non-grounded electrode group. And the one end of the non-grounded electrode penetrates a wall defining the restricted space and is connected to the power introduction unit, respectively.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11158688A JPH0663101B2 (en) | 1988-05-10 | 1988-05-10 | Plasma processing device |
| US07/214,179 US4968918A (en) | 1987-07-06 | 1988-07-01 | Apparatus for plasma treatment |
| EP88110707A EP0298420B1 (en) | 1987-07-06 | 1988-07-05 | Apparatus for plasma treatment |
| DE3887933T DE3887933T2 (en) | 1987-07-06 | 1988-07-05 | Plasma processing device. |
| KR1019880008345A KR950001541B1 (en) | 1987-07-06 | 1988-07-06 | Plasma treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11158688A JPH0663101B2 (en) | 1988-05-10 | 1988-05-10 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01283360A JPH01283360A (en) | 1989-11-14 |
| JPH0663101B2 true JPH0663101B2 (en) | 1994-08-17 |
Family
ID=14565126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11158688A Expired - Lifetime JPH0663101B2 (en) | 1987-07-06 | 1988-05-10 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0663101B2 (en) |
-
1988
- 1988-05-10 JP JP11158688A patent/JPH0663101B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01283360A (en) | 1989-11-14 |
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