Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0664086B2 - Probe card - Google Patents
[go: Go Back, main page]

JPH0664086B2 - Probe card - Google Patents

Probe card

Info

Publication number
JPH0664086B2
JPH0664086B2 JP20208189A JP20208189A JPH0664086B2 JP H0664086 B2 JPH0664086 B2 JP H0664086B2 JP 20208189 A JP20208189 A JP 20208189A JP 20208189 A JP20208189 A JP 20208189A JP H0664086 B2 JPH0664086 B2 JP H0664086B2
Authority
JP
Japan
Prior art keywords
transparent plate
card
plate
probe card
stylus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20208189A
Other languages
Japanese (ja)
Other versions
JPH0365659A (en
Inventor
憲二郎 坂東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Takeda Sangyo Co Ltd
Original Assignee
Takeda Sangyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Takeda Sangyo Co Ltd filed Critical Takeda Sangyo Co Ltd
Priority to JP20208189A priority Critical patent/JPH0664086B2/en
Publication of JPH0365659A publication Critical patent/JPH0365659A/en
Publication of JPH0664086B2 publication Critical patent/JPH0664086B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Description

【発明の詳細な説明】 <産業上の利用分野> 本発明は多ピン化される半導体チップの触針による電気
的測定に替り、バンプによる接触により電気的測定を行
うプローブカードに関するものである。
DETAILED DESCRIPTION OF THE INVENTION <Industrial field of application> The present invention relates to a probe card for performing electrical measurement by bump contact instead of electrical measurement by a stylus of a semiconductor chip having multiple pins.

<従来の技術> 半導体製品の制作の際に導通状態などの電気的特性の測
定が行われており、例えば半導体製品のウェーハ状態で
のチェック、或いは抵抗アレイ、ダイオードアレイ、液
晶の表示板などの各種ICにおける電気的チェック等が行
なわれいる。
<Prior Art> The electrical characteristics such as the conduction state are measured at the time of manufacturing a semiconductor product. For example, the wafer state of the semiconductor product is checked, or a resistor array, a diode array, a liquid crystal display panel, etc. Electrical checks, etc. on various ICs are performed.

この様な測定器として、各半導体製品毎に交換して使用
するカード状のプローブカードが知られており、これは
例えば、第5図に示されるように、カード基板aが、そ
れと接続されるコネクタbによりテスタcに接続されて
いる。
As such a measuring instrument, a card-shaped probe card which is used by replacing each semiconductor product is known. For example, as shown in FIG. 5, a card substrate a is connected to the probe card. It is connected to the tester c by the connector b.

このカード基板aの中心部には複数の触針dが設けら
れ、この触針dの先端は下側に突出する構造となってい
る。
A plurality of stylus d is provided at the center of the card board a, and the tip of the stylus d has a structure protruding downward.

一方、半導体のウェーハ・チップeの可動台fの所定位
置に載置されており、この可動台fを移動させてウェー
ハ・チップeを順次触針dの下側位置にセッティングす
る。そして、この触針dによりウェーハ・チップeの電
気的測定が行われている。
On the other hand, the semiconductor wafer chip e is placed at a predetermined position on the movable table f, and the movable table f is moved to sequentially set the wafer chips e to the lower position of the stylus d. The probe tip d is used to electrically measure the wafer chip e.

上記カード基板aに取付けられる触針dは、第6図に示
されるように、ウェーハ・チップeのパッド数に応じ
て、カード基板aにエポキシ樹脂材等の絶縁体gによっ
て取り付けられている。
As shown in FIG. 6, the stylus d attached to the card substrate a is attached to the card substrate a by an insulator g such as an epoxy resin material according to the number of pads of the wafer chip e.

<発明が解決しようとする課題> しかし乍ら近年、液晶TV付VTRやワードプロセッサー等
の普及により高密度集積回路(多ピン回路)の受容が増
大している。そこでこれに対応する為には、触針の数が
多くするしか無い、しかし上記触針の太さが200μm〜2
50μmを有し、高密度に触針を並べるのに限界があり、
又高密度になる程、触針は簡単に位置ずれが生じ易くな
り、更に曲ったり、他の触針とショートする等の問題が
生起し易くなる。しかもウェーハ・チップのパッドに触
針の先端のみを接触させることで、その接触力の可減に
よって、触針先端がパッドに突き刺って損傷を与える事
も多々あるのが現状である。
<Problems to be Solved by the Invention> However, in recent years, the acceptance of high-density integrated circuits (multi-pin circuits) has increased due to the spread of VTRs with liquid crystal TVs and word processors. Therefore, in order to deal with this, there is no choice but to increase the number of stylus, but the thickness of the stylus is 200 μm to 2 μm.
It has a size of 50 μm, and there is a limit to how to arrange the stylus in high density
Further, as the density becomes higher, the stylus is more likely to be displaced, and problems such as further bending and short-circuiting with other stylus are likely to occur. In addition, by contacting only the tip of the stylus with the pad of the wafer chip, the tip of the stylus often pierces the pad and is damaged due to the reduction of the contact force.

本発明では上記諸問題を解消する為に、触針を使用せず
に、グラス板等の絶縁板状に配置したバンプ群によっ
て、ウェーハ・チップのパッドに接触させる機構とした
プローブ・カードを提供することを目的とするものであ
る。
In order to solve the above problems, the present invention provides a probe card having a mechanism for contacting a pad of a wafer chip with a group of bumps arranged in an insulating plate shape such as a glass plate without using a stylus. The purpose is to do.

<課題を解決するための手段> 本発明の上記目的は次の如き構成のプローブ・カードに
よって達成できる。即ちその要旨はテスタに着脱自在な
コネクタを備えたカード基板において、該カード基板の
略中央に貫設される中心孔と、該中心孔を上記カード基
板下面より覆設する絶縁体からなる透明板と、該透明板
を中心孔に覆設する際に、上記カード基板との間に介在
させる補助板及び転質ゴム等からなる緩衝用部材と、そ
の先端が上記補助板に自在に圧接される如き上記中心孔
同縁部に設けられる平行調整用ネジと、上記透明板下面
に、ウェーハ・チップのパッドに対応する如く配線され
るバンプとから構成され、更に上記バンプに振動を付与
する手段を設けたことを特徴とするプローブカードであ
る。
<Means for Solving the Problems> The above object of the present invention can be achieved by a probe card having the following configuration. That is, the gist thereof is, in a card board provided with a detachable connector on a tester, a transparent plate consisting of a central hole penetrating substantially in the center of the card board and an insulator covering the central hole from the lower surface of the card board. When the transparent plate is covered with the central hole, an auxiliary plate interposed between the transparent plate and the card substrate and a cushioning member made of a converted rubber and the tip thereof are freely pressed against the auxiliary plate. A parallel adjusting screw provided on the same edge portion of the center hole as described above, and a bump arranged on the lower surface of the transparent plate so as to correspond to a pad of a wafer chip, and means for applying vibration to the bump. The probe card is characterized by being provided.

<実施例並びに作用> 以下本発明に係るプローブ・カードを、その実施例を示
す図面を参酌し乍ら詳述する。
<Examples and Functions> The probe card according to the present invention will be described in detail below with reference to the drawings showing the examples.

第1図は本発明のプローブ・カードAの側面説明図、第
2図は同平面説明図である。
FIG. 1 is a side view of the probe card A of the present invention, and FIG. 2 is a plan view of the same.

即ちプローブ・カードAは、その中央に中心孔(1)が
貫設されるエポキシ樹脂等から成るカード基板(2)
と、上記中心孔(1)を覆設する如く設けられる石英ガ
ラス等より成る透明板(3)と、同透明板(3)上面
に、プリント配線化したパンブ(4)群から構成される
ものである。そこで第3図に示すように、透明板(3)
は、カード基板(2)下面に対して、補助板(5)及び
軟質ゴム等の緩衝用部材(6)を介して粘着されるもの
である。そして上記補助板(5)上のカード基板(2)
に、その先端が上記補助板(5)に当接する平行調整用
ネジ(7),(7),…が、設けられるものであり、同
平行調整用ネジ(7)を左右回転させることで、その先
端が上記補助板(5)に当接され、その強弱によって、
上記透明板(3)を上記緩衝用部材(6)を介して平行
状に微調整する機構とするものである。即ち上記補助板
(5)を粘着させることでミクロン単位の調整が可能と
なるものである。又上記中心孔(1)内内壁面上に、そ
の先端が上記透明板(3)に当接する如き振動板(8)
を設けるものである。
That is, the probe card A has a card substrate (2) made of epoxy resin or the like having a central hole (1) formed in the center thereof.
And a transparent plate (3) made of quartz glass or the like provided so as to cover the central hole (1), and a group of bumps (4) having printed wiring formed on the upper surface of the transparent plate (3). Is. Therefore, as shown in FIG. 3, the transparent plate (3)
Is adhered to the lower surface of the card substrate (2) via an auxiliary plate (5) and a cushioning member (6) such as soft rubber. And the card substrate (2) on the auxiliary plate (5)
Is provided with parallel adjusting screws (7), (7), ..., whose tip abuts on the auxiliary plate (5). By rotating the parallel adjusting screw (7) left and right, The tip is brought into contact with the auxiliary plate (5), and depending on its strength,
The transparent plate (3) is a mechanism for finely adjusting the transparent plate (3) in parallel through the cushioning member (6). That is, by adhering the above-mentioned auxiliary plate (5), adjustment in units of micron becomes possible. Further, on the inner wall surface of the center hole (1), a vibrating plate (8) whose tip is in contact with the transparent plate (3).
Is provided.

次に上記透明板(3)は、第4図に示すように、透明板
(3)下面に薄膜ハイブリッドICのプロセスを用いて、
伝送路、電源回路用の電送路(9),(9)…を形成す
る。この電送路(9),(9)…先端上に、ウェーハ・
チップのパッド位置と同位置上に、バンプ(4)
(4)、…を突設するものである。このバンプ(4)
は、通電性、かつ耐摩耗性の優れた材料で形成するもの
である。
Next, as shown in FIG. 4, the transparent plate (3) is formed on the lower surface of the transparent plate (3) using a thin film hybrid IC process.
Transmission lines, power transmission lines (9), (9), ... For power supply circuits are formed. These electric wires (9), (9) ...
Bump (4) on the same position as the chip pad position
(4), ... Are projected. This bump (4)
Is made of a material having excellent electrical conductivity and wear resistance.

更に上記透明板(3)に形成された電送路(9)の基端
(10)には、カード基板(2)下面に配線されるパター
ン(図示せず)に一体的に接続されるものである。
Further, the base end (10) of the transmission path (9) formed on the transparent plate (3) is integrally connected to a pattern (not shown) wired on the lower surface of the card substrate (2). is there.

なお上記透明板(3)の材質は、石英グラスの他に、ホ
ワイトサファイヤ・グラス等のように硬質かつ絶縁性の
優れた透明物質であればよく、できる限り薄板状に形成
できる材質が望ましいものである。
The material of the transparent plate (3) is not limited to quartz glass, and may be a transparent material having a hard and excellent insulating property such as white sapphire glass, and a material that can be formed into a thin plate as much as possible is desirable. Is.

なお上記振動板(8)に振動を付与し、透明板(3)を
介してバンプ(4)に振動を与える機構の他に、バンプ
(4)に直接に高周波を与え振動させる機構を考えられ
るものであり、状況に応じて最も適した振動機構を採用
することが望ましいものである。
In addition to the mechanism for applying vibration to the vibrating plate (8) and vibrating the bumps (4) through the transparent plate (3), a mechanism for directly applying a high frequency to the bumps (4) to vibrate can be considered. It is desirable to adopt the most suitable vibration mechanism according to the situation.

以上の構成より成る本発明では、ウェーハ・チップのパ
ッド(図示せず)に対し、バンプ(4)、(4)、…を
上方から押圧するように接触させるものであり、その際
にカード基板(2)の中心孔(1)より、透明板(3)
を通して、接地状態を観察する。そして上記パッドとバ
ンプ(4)、(4)、…が一様に接触していない場合に
は、平行調整用ネジ(7)、(7)、…によって、調整
する。この様にして目視によってパッドとバンプ
(4)、(4)、…を一様に接触させた後に、振動板
(8)に対し高周波による振動を与えたら、電気特性試
験を行うものであり、上記振動板(8)の振動によっ
て、透明板(3)自体に振動が伝達され、バンプ
(4)、(4)、…が振動する。従ってパッド面に形成
される酸化皮膜に対し微妙な剥離が行われることで通電
性が向上し、良好な電気特性試験を行うことが可能とな
る。又微少な傷を付けることで試験後に、目視による接
触状況を確認することができるものである。
According to the present invention having the above-described structure, the bumps (4), (4), ... Are brought into contact with the pads (not shown) of the wafer chip so as to be pressed from above. From the central hole (1) of (2), the transparent plate (3)
Through and observe the ground condition. If the pads and the bumps (4), (4), ... Are not in uniform contact with each other, adjustment is performed by the parallel adjusting screws (7), (7) ,. In this way, after the pads and the bumps (4), (4), ... Are brought into contact with each other by visual observation evenly and then the vibration (8) is applied with a high frequency, an electrical characteristic test is conducted. By the vibration of the vibrating plate (8), the vibration is transmitted to the transparent plate (3) itself, and the bumps (4), (4), ... Vibrate. Therefore, since the oxide film formed on the pad surface is slightly delaminated, the electrical conductivity is improved, and a good electrical characteristic test can be performed. Further, it is possible to visually confirm the contact state after the test by making a slight scratch.

<発明の効果> 以上述べて来た如く本発明によれば、触針に替えて、透
明板上にプリント配線化したバンプを設けることによっ
て、ウェーハ・チップのパッドに対する接触圧が、触針
機構の場合12〜20g/mmに対し、本発明では4g/mm
と極端に小さくなり、パッドに損傷を与えることが殆ど
無くなる。又透明板により接触状況が観察できると共
に、平行調整用ネジによって簡単に接触調整が行われ、
更に透明板に対し、LCI設計のパッドレイアウトのCADを
用いることができる為に、接地回路及びバンプの微細化
が可能となり、多ピン化への対応が充分に行なえるもの
である。しかも振動板によるバンプの振動を生起させる
ことで通電特性を向上させ、よりよい電気特性試験を行
なうことが可能となる等、種々の効果を奏するものであ
る。
<Effects of the Invention> As described above, according to the present invention, the contact pressure to the pad of the wafer chip is changed by providing the bumps with printed wiring on the transparent plate instead of the stylus. In the case of 12 to 20 g / mm 2 , the present invention is 4 g / mm 2
It becomes extremely small and damage to the pad is almost eliminated. In addition, the contact status can be observed with the transparent plate, and the contact adjustment can be easily performed with the parallel adjustment screw.
Furthermore, since the CAD of the pad layout of the LCI design can be used for the transparent plate, the grounding circuit and bumps can be miniaturized, and it is possible to sufficiently cope with the increase in the number of pins. In addition, by vibrating the bumps by the diaphragm, the current-carrying characteristics can be improved, and a better electrical characteristic test can be performed.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明のプローブ・カードAの全体側面図、第
2図は同平面図、第3図は本発明の要部拡大断面図、第
4図は本発明の要部拡大平面図、第5図及び第6図は従
来例を示す説明図である。 図中(1);中心孔 (2);カード基板 (3);透明板 (4);バンプ (5);補助板 (6);緩衝用部材 (7);平行調整用ネジ (8);振動板
1 is an overall side view of the probe card A of the present invention, FIG. 2 is a plan view of the same, FIG. 3 is an enlarged sectional view of an essential part of the present invention, and FIG. 4 is an enlarged plan view of an essential part of the present invention. 5 and 6 are explanatory views showing a conventional example. In the figure, (1); center hole (2); card substrate (3); transparent plate (4); bump (5); auxiliary plate (6); buffer member (7); parallel adjustment screw (8); Diaphragm

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】テスタに着脱自在なコネクタを備えたカー
ド基板において、該カード基板の略中央に貫設される中
心孔と、該中心孔を上記カード基板下面より覆設する絶
縁体からなる透明板と、該透明板を中心孔に覆設する際
に、上記カード基板との間に介在させる補助板及び転質
ゴム等からなる緩衝用部材と、その先端が上記補助板に
自在に圧接される如き上記中心孔同縁部に設けられる平
行調整用ネジと、上記透明板下面に、ウェーハ・チップ
のパッドに対応する如く配線されるバンプとから構成さ
れ、更に上記バンプに振動を付与する手段を設けたこと
を特徴とするプローブカード。
1. A card board having a detachable connector on a tester, comprising a center hole penetrating substantially in the center of the card board, and a transparent body comprising an insulator covering the center hole from the lower surface of the card board. A plate, an auxiliary plate interposed between the transparent plate and the card substrate when the transparent plate is covered with the card substrate, and a cushioning member made of a converted rubber or the like, and its tip freely pressed against the auxiliary plate. And a bump arranged on the lower surface of the transparent plate so as to correspond to a pad of a wafer chip, and means for applying vibration to the bump. A probe card characterized by being provided with.
JP20208189A 1989-08-02 1989-08-02 Probe card Expired - Lifetime JPH0664086B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20208189A JPH0664086B2 (en) 1989-08-02 1989-08-02 Probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20208189A JPH0664086B2 (en) 1989-08-02 1989-08-02 Probe card

Publications (2)

Publication Number Publication Date
JPH0365659A JPH0365659A (en) 1991-03-20
JPH0664086B2 true JPH0664086B2 (en) 1994-08-22

Family

ID=16451648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20208189A Expired - Lifetime JPH0664086B2 (en) 1989-08-02 1989-08-02 Probe card

Country Status (1)

Country Link
JP (1) JPH0664086B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05340964A (en) * 1992-06-05 1993-12-24 Mitsubishi Electric Corp Tester for wafer and chip
US5378982A (en) * 1993-02-25 1995-01-03 Hughes Aircraft Company Test probe for panel having an overlying protective member adjacent panel contacts
US6246247B1 (en) 1994-11-15 2001-06-12 Formfactor, Inc. Probe card assembly and kit, and methods of using same
US7064566B2 (en) 1993-11-16 2006-06-20 Formfactor, Inc. Probe card assembly and kit
US6483328B1 (en) 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
US6456099B1 (en) 1998-12-31 2002-09-24 Formfactor, Inc. Special contact points for accessing internal circuitry of an integrated circuit
US6468098B1 (en) 1999-08-17 2002-10-22 Formfactor, Inc. Electrical contactor especially wafer level contactor using fluid pressure
US7262611B2 (en) 2000-03-17 2007-08-28 Formfactor, Inc. Apparatuses and methods for planarizing a semiconductor contactor

Also Published As

Publication number Publication date
JPH0365659A (en) 1991-03-20

Similar Documents

Publication Publication Date Title
TW548417B (en) Probe contact system having planarity adjustment mechanism
EP0681186A2 (en) Method for probing a semiconductor wafer
JPS63313832A (en) Wafer probe
JP2002062315A (en) Contact structure
JP2006032593A (en) Probe cassette, semiconductor tester and method for manufacturing semiconductor device
US6759860B1 (en) Semiconductor device package substrate probe fixture
US6433360B1 (en) Structure and method of testing failed or returned die to determine failure location and type
JPH0664086B2 (en) Probe card
US6566899B2 (en) Tester for semiconductor device
CN109786265B (en) A packaged device, preparation method and signal measurement method
US6486688B2 (en) Semiconductor device testing apparatus having a contact sheet and probe for testing high frequency characteristics
JPH0810234B2 (en) Inspection equipment
JPH0348171A (en) Leadless probe card of in-circuit tester for hybrid integrated circuit
JPS612338A (en) Inspection equipment
JP2585811B2 (en) Probe card
JPS6276733A (en) Wafer probe head
JP2533431Y2 (en) IC wafer test probe
JPS62238633A (en) Probe for measuring electric characteristic of semiconductor wafer
JPH09159694A (en) Lsi test probe
JP2001144149A (en) Semiconductor measurement jig
JPH0823013A (en) Prober for wafer
JP2679684B2 (en) Anisotropic conductive film and semiconductor wafer measuring jig using anisotropic conductive film
JPH09113538A (en) Bump probe device
KR100274556B1 (en) Inspection system of devices on wafer
JPH03159146A (en) Probing card