JPH0664712B2 - Method of manufacturing thin film magnetic head - Google Patents
Method of manufacturing thin film magnetic headInfo
- Publication number
- JPH0664712B2 JPH0664712B2 JP60030021A JP3002185A JPH0664712B2 JP H0664712 B2 JPH0664712 B2 JP H0664712B2 JP 60030021 A JP60030021 A JP 60030021A JP 3002185 A JP3002185 A JP 3002185A JP H0664712 B2 JPH0664712 B2 JP H0664712B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- magnetic head
- magnetic
- upper magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はPCM記録再生装置等に用いられる薄膜磁気ヘッ
ドの製造方法に関し、詳細には導体薄膜または上部磁性
膜のパターニング方法に関するものである。The present invention relates to a method for manufacturing a thin film magnetic head used in a PCM recording / reproducing apparatus or the like, and more particularly to a method for patterning a conductor thin film or an upper magnetic film.
一般に、薄膜磁気ヘッドは、記録に関与するヘッド磁界
が急峻であるため記録密度の増加が可能であるととも
に、高分解能の記録ができ、さらに小型化が可能である
等、優れた特性を有している。In general, the thin-film magnetic head has excellent characteristics such that the recording density can be increased because the head magnetic field involved in recording is steep, high-resolution recording can be performed, and the size can be further reduced. ing.
また、このような薄膜磁気ヘッドは、ヘッドを構成する
導体薄膜や上部磁性膜、絶縁膜等がスパッタリング等の
真空薄膜形成技術やフォトエッチング等の手法を用いて
製造されており、上記真空薄膜形成技術の進歩と相埃っ
て上記薄膜磁気ヘッドが実用化されている。Further, in such a thin film magnetic head, the conductor thin film, the upper magnetic film, the insulating film and the like which compose the head are manufactured by using a vacuum thin film forming technique such as sputtering or a method such as photoetching. The thin-film magnetic head has been put to practical use in tandem with technological advances.
ところで、上述の薄膜磁気ヘッドは、通常、フェライト
等の下部磁性基板上にSiO２,Al２Ｏ３等の絶縁膜を被着
形成し、この絶縁膜上にCu,Al等の導体薄膜をスパッタ
リング等の真空薄膜形成技術により形成した後、この導
体薄膜をイオンエッチングの如きドライエッチングで所
定の形状にエッチングし、さらに絶縁膜を介して、Fe−
Al−Si系合金（センダスト）、Fe−Ni系合金（パーマロ
イ）等の上部磁性膜を同様の手法で被着し、所定形状に
エッチングして作製している。By the way, in the above-mentioned thin film magnetic head, an insulating film such as SiO 2 or Al 2 O 3 is usually deposited on a lower magnetic substrate such as ferrite, and a conductive thin film such as Cu or Al is sputtered on the insulating film. After forming by a vacuum thin film forming technique such as the above, this conductor thin film is etched into a predetermined shape by dry etching such as ion etching, and further, Fe-
An upper magnetic film made of Al-Si alloy (Sendust), Fe-Ni alloy (Permalloy) or the like is deposited by the same method and etched to have a predetermined shape.
しかしながら、上述のように導体薄膜や上部磁性膜、絶
縁膜をドライエッチングによりパターニングすると、こ
のエッチングに非常に時間を要するという問題がある。
特にFe−Al−Si系合金よりなる上部磁性膜のパターニン
グは、エッチング速度が遅く（１時間当り１μｍ程
度）、さらにこの上部磁性膜は磁気効率を良くするため
に比較的厚く形成されるので（通常、約10〜15μｍ）こ
のエッチング工程に膨大な加工時間を要している。However, if the conductor thin film, the upper magnetic film, and the insulating film are patterned by dry etching as described above, there is a problem that this etching takes a very long time.
In particular, the patterning of the upper magnetic film made of Fe-Al-Si alloy has a slow etching rate (about 1 μm per hour), and the upper magnetic film is formed relatively thick to improve the magnetic efficiency ( (Normally, about 10 to 15 μm) This etching process requires a huge processing time.
また、上述のイオンエッチング法によるパターニング
は、上部磁性体を残存すべき部分にフォトレジストを塗
布してから、エッチングを行っている。このフォトレジ
ストは露光・現像の前後に塗布、硬化、剥離等の作業が
必要で非常に手間がかかる工程になっている。したがっ
て、多くの作業者が必要であり、製造コストが高くなる
という問題がある。Further, in the patterning by the above-mentioned ion etching method, etching is performed after applying a photoresist to a portion where the upper magnetic body should remain. This photoresist requires a work such as coating, curing and peeling before and after exposure and development, which is a very laborious process. Therefore, many workers are required, and there is a problem that the manufacturing cost becomes high.
さらに、このイオンエッチング法においては、イオンの
入射方向によりエッチングされない、いわゆる影の部分
が生じ、上部磁性膜が完全にエッチングされず残在した
り、あるいは完全に取り除くためにエッチング時間を長
くすると、部分的に下地膜である絶縁膜がオーバーエッ
チングされ絶縁破壊される虞れがある。Furthermore, in this ion etching method, a so-called shadow portion that is not etched depending on the incident direction of ions is generated, and the upper magnetic film is not completely etched and remains, or if the etching time is lengthened to completely remove it, There is a possibility that the insulating film, which is the base film, is partially overetched and dielectric breakdown occurs.
そこで、Arガス、CO２ガス、YAG（イットリウム・アル
ミニウム・ガーネットの結晶）等を発振源とするレーザ
光線を使用して上部磁性膜をパターニングする方法が試
みられている。しかし、これらレーザ光線は、その波長
領域が赤外域にあり、いずれも円形ビームである。その
ため、パターニングにおいては、このレーザ光線の移動
が必要で、加工能力に限界があるとともにレーザ光線に
よる加工溝が滑らかでなく加工精度に劣り、したがって
磁気特性が悪くなる等の問題があった。Therefore, a method of patterning the upper magnetic film using a laser beam having an oscillation source such as Ar gas, CO 2 gas, YAG (yttrium-aluminum-garnet crystal) has been attempted. However, these laser beams have a wavelength region in the infrared region and are all circular beams. Therefore, in the patterning, there is a problem that the movement of the laser beam is required, the processing capability is limited, the processing groove by the laser beam is not smooth and the processing accuracy is poor, and the magnetic characteristics are deteriorated.
このように、イオンエッチングの如きドライエッチング
法により、上部磁性膜や導体薄膜をパターニングする
と、このパターニング工程に膨大な時間を要し、また、
この工数や人員が増加し、加工能率や加工精度に劣ると
いう問題があった。In this way, if the upper magnetic film and the conductor thin film are patterned by a dry etching method such as ion etching, a huge amount of time is required for this patterning process, and
There has been a problem that the number of man-hours and the number of personnel increase, and the processing efficiency and the processing accuracy are poor.
そこで、本考案は上述の問題点を解決するために提案さ
れたものであり、上部磁性膜や導体薄膜をパターニング
する工程において、このパターニングが瞬時に行なわ
れ、かつ加工能率及び加工精度に優れた薄膜磁気ヘッド
の製造方法を提供することを目的とするものである。Therefore, the present invention has been proposed to solve the above-mentioned problems, and in the step of patterning the upper magnetic film and the conductor thin film, this patterning is instantaneously performed, and the processing efficiency and the processing accuracy are excellent. It is an object of the present invention to provide a method for manufacturing a thin film magnetic head.
この目的を達成するために、本発明の薄膜磁気ヘッドの
製造方法は、下部磁性基板上に所定のパターン形状の導
体薄膜や上部磁性膜、絶縁膜を積層形成して薄膜磁気ヘ
ッドを製造するに際し、上記導体薄膜および／または上
部磁性膜をビームの断面形状が直鎖状になるように絞っ
た波長100〜400nmの短波長レーザ光により所定のパター
ン形状に加工することを特徴とするものである。In order to achieve this object, the method of manufacturing a thin film magnetic head of the present invention is a method for manufacturing a thin film magnetic head by laminating a conductive thin film, an upper magnetic film, and an insulating film having a predetermined pattern on a lower magnetic substrate. Characterized in that the conductor thin film and / or the upper magnetic film is processed into a predetermined pattern shape by a short-wavelength laser light having a wavelength of 100 to 400 nm which is narrowed so that the cross-sectional shape of the beam becomes linear. .
したがって本発明によれば、導体薄膜や上部磁性膜のパ
ターニングに短波長レーザ光を使用しているので、集束
レンズ等でビームの断面形状（すなわち照射面における
ビームスポットの形状）が所望の線幅の直線状になるよ
うに絞ることができ、したがって、導体薄膜や上部磁性
膜はビーム移動を行なうことなく一度に加工され、加工
精度も確保される。Therefore, according to the present invention, since the short-wavelength laser light is used for patterning the conductor thin film or the upper magnetic film, the cross-sectional shape of the beam (that is, the shape of the beam spot on the irradiation surface) is desired to be the desired line width with a focusing lens or the like. Therefore, the conductor thin film and the upper magnetic film can be processed at one time without moving the beam, and the processing accuracy can be ensured.
以下、本発明の実施例について図面を参照しながら説明
する。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
まず、第１図（Ａ）及び第１図（Ｂ）に示すように、例
えばMn−Zn系フェライトやNi−Zn系フェライト等で形成
される基板、あるいはセラミックス等の非磁性材上にFe
−Ni系合金（パーマロイ）やFe−Al−Si系合金（センダ
イト）等を積層した複合基板等の下部磁性基板１上に、
SiO２やAl２Ｏ３等よりなる第１絶縁膜２をスパッタリ
ング等により被着形成する。なお、上記下部磁性基板１
としてNi−Zn系フェライトを用いた場合には、絶縁抵抗
が大きいので、この第１絶縁膜２は不要である。First, as shown in FIGS. 1 (A) and 1 (B), Fe is formed on a substrate formed of, for example, Mn-Zn ferrite or Ni-Zn ferrite, or on a non-magnetic material such as ceramics.
-Ni-based alloy (Permalloy), Fe-Al-Si-based alloy (Sendite), etc. are laminated on the lower magnetic substrate 1 such as a composite substrate.
The first insulating film 2 made of SiO 2 , Al 2 O 3 or the like is deposited by sputtering or the like. The lower magnetic substrate 1
When Ni-Zn type ferrite is used as this, since the insulation resistance is large, the first insulating film 2 is unnecessary.
次いで、上記基板１上全面にCu,Al等をスパッタリング
等で形成し、第２図（Ａ）及び第２図（Ｂ）に示すよう
に、フォトエッチング技術等により所定形状にパターニ
ングして導体薄膜３を形成し、さらにこの上にＳ１Ｏ２
等の第２絶縁膜４を積層する。なお、第２図（Ａ）にお
いては、この第２絶縁膜４は省略してある。Then, Cu, Al, etc. are formed on the entire surface of the substrate 1 by sputtering or the like, and as shown in FIGS. 2A and 2B, a conductor thin film is formed by patterning into a predetermined shape by a photoetching technique or the like. 3 on top of which S 1 O 2
And the second insulating film 4 is laminated. The second insulating film 4 is omitted in FIG. 2 (A).
次いで、バックギャップ部となる部分の第２絶縁膜４を
エッチングにより取り除いた後、第３図に示すように、
上記基板１上に形成された導体薄膜３の接続端子部3a,3
aを除いて、マスクスパッタリングの手法でCuやAl等よ
りなるダミー膜７を膜厚３μｍ程度に形成し、さらにこ
のダミー膜７上に同様にマスクスパッタリングの手法で
センダストやパーマロイ等の上部磁性膜８を所定の領域
に被着形成する。その後、この基板１上に例えばCrやSi
O２よりなる保護膜９を形成し、真空アニール処理を施
して、上部磁性膜８の透磁率を確保する。Then, after removing the second insulating film 4 in the portion to be the back gap portion by etching, as shown in FIG.
Connection terminal portions 3a, 3 of the conductor thin film 3 formed on the substrate 1
Except for a, a dummy film 7 made of Cu, Al or the like is formed to a film thickness of about 3 μm by a mask sputtering method, and an upper magnetic film such as sendust or permalloy is similarly formed on the dummy film 7 by a mask sputtering method. 8 is deposited on a predetermined area. After that, on this substrate 1, for example, Cr or Si
A protective film 9 made of O 2 is formed and vacuum annealing is performed to secure the magnetic permeability of the upper magnetic film 8.
次いで、上記基板１の保護膜９側より短波長レーザ光L,
Lを矩形の集束レンズ11,11で上記上部磁性膜８の形成領
域の幅ｘと略一致する長さの直線的ビーム（断面形状が
直線状のビーム）に絞って照射し、所定のトラック幅TW
になるように上部磁性膜８及び保護膜９を切断しパター
ニングを行う。このパターニングにおいて、第２絶縁膜
４は、ダミー膜７によりレーザ光Ｌから保護され絶縁破
壊等の虞れはない。Next, from the protective film 9 side of the substrate 1, the short wavelength laser light L,
L is focused by a rectangular focusing lens 11, 11 into a linear beam (a beam having a linear cross section) having a length substantially matching the width x of the formation region of the upper magnetic film 8, and a predetermined track width is applied. TW
Then, the upper magnetic film 8 and the protective film 9 are cut so as to be patterned. In this patterning, the second insulating film 4 is protected from the laser light L by the dummy film 7, and there is no fear of dielectric breakdown or the like.
上記短波長レーザ光Ｌとしては、紫外線領域の波長（レ
ーザ波長が100〜400nm、実用範囲は150〜350nm）の光を
発するレーザ光であれば良く、例えば波長308nmのXeCl
エキシマレーザが挙げられる。また、この短波長レーザ
光Ｌは波長が短いので、円筒レンズ等の集束レンズ11に
より断面形状が直線状の直線ビームに絞ることが可能で
あり、さらには集束レンズ11の形状等を変えることによ
り線幅を自由に変えることができる。したがって、この
短波長レーザ光Ｌにより切断される切断溝幅ｌは、隣接
トラック間のクローストークを考慮して設定することが
できる。The short-wavelength laser light L may be any laser light that emits light having a wavelength in the ultraviolet region (laser wavelength is 100 to 400 nm, practical range is 150 to 350 nm), for example, XeCl having a wavelength of 308 nm.
An excimer laser is mentioned. Since the short-wavelength laser light L has a short wavelength, it can be focused into a linear beam having a linear cross section by a focusing lens 11 such as a cylindrical lens. Furthermore, by changing the shape of the focusing lens 11 or the like. The line width can be changed freely. Therefore, the cutting groove width 1 cut by the short wavelength laser light L can be set in consideration of the crosstalk between the adjacent tracks.
したがって、本実施例によれば、従来のように照射光を
移動する必要がなく瞬時にて加工でき、このため加工時
間の短縮等加工能率が向上し、またこの加工溝エッジが
シャープなものとなり、加工精度が向上するとともに、
磁気特性や信頼性の優れた薄膜磁気ヘッドとなる。さら
に、高出力・高効率の短波長レーザ光で加工するので消
費電力を抑えることができる。Therefore, according to the present embodiment, it is possible to perform processing instantly without the need to move the irradiation light as in the conventional case, and therefore, the processing efficiency is improved such as the reduction of the processing time, and the processing groove edge becomes sharp. , While improving the processing accuracy,
The thin film magnetic head has excellent magnetic characteristics and reliability. Further, since the processing is performed with a high-output, high-efficiency short-wavelength laser light, power consumption can be suppressed.
一方、上述の如くパターニングすれば従来の煩雑な工程
が必要であったエッチング工程が僅か１工程で加工で
き、作業者を削減でき、また露光装置等が不要となり設
備投資を大幅に軽減できる。On the other hand, if the patterning is performed as described above, the etching process, which has conventionally required a complicated process, can be processed in only one process, the number of workers can be reduced, and an exposure apparatus or the like is not required, so that capital investment can be significantly reduced.
最後に、第５図に示すようにガラスセラミック等の非磁
性材よりなる保護板12を融着ガラス13により融着接合し
て薄膜磁気ヘッドを完成する。Finally, as shown in FIG. 5, a protective plate 12 made of a non-magnetic material such as glass ceramic is fusion bonded with a fusion glass 13 to complete a thin film magnetic head.
本発明は上記実施例に限定されるものではなく、導体薄
膜のパターニングにも短波長レーザを使用しても良い。The present invention is not limited to the above embodiment, and a short wavelength laser may be used for patterning the conductor thin film.
すなわち、上記実施例において、第１絶縁膜を形成した
下部磁性基板上全面にAl,Cu等の導体を被着形成した
後、短波長レーザで上記導体を切断し、所定形状の導体
薄膜を形成するようにしても良い。That is, in the above-described embodiment, after a conductor such as Al or Cu is formed on the entire surface of the lower magnetic substrate on which the first insulating film is formed, the conductor is cut by a short wavelength laser to form a conductor thin film having a predetermined shape. It may be done.
以上の説明のように、本発明の薄膜磁気ヘッドの製造方
法によれば、上部磁性膜や導体薄膜のパターニングに短
波長レーザ光を使用しているので、直線的ビームをもっ
て所望形状に一度に加工することができるとともに、こ
の短波長レーザ光での加工溝エッジがシャープなものと
なり、加工精度が向上し、したがって磁気特性に優れた
薄膜磁気ヘッドが得られる。As described above, according to the method for manufacturing a thin film magnetic head of the present invention, since short wavelength laser light is used for patterning the upper magnetic film and the conductive thin film, a linear beam is processed into a desired shape at a time. In addition, the processing groove edge with this short wavelength laser light becomes sharp, the processing accuracy is improved, and a thin film magnetic head having excellent magnetic characteristics can be obtained.
また、従来のエッチング方法では煩雑な工程が必要であ
ったものが、僅か１工程で加工でき、このパターニング
工程の作業人員を削減でき、さらに露光装置等が不要と
なって設備投資の軽減が可能となって製造コストの低減
が図れる。In addition, the conventional etching method required complicated steps, but it can be processed in only one step, reducing the number of workers in this patterning step, and reducing the equipment investment by eliminating the need for exposure equipment. Therefore, the manufacturing cost can be reduced.
第１図ないし第５図は本発明の薄膜磁気ヘッドの製造方
法をその工程順序に従って示すものであり、第１図
（Ａ）は第１絶縁膜被着工程を示す概略的な斜視図、第
１図（Ｂ）は第１図（Ａ）のａ−ａ線における断面図、
第２図（Ａ）は導体薄膜形成工程を示す概略的な斜視
図、第２図（Ｂ）は第２図（Ａ）のｂ−ｂ線における断
面図、第３図（Ａ）は上部磁性膜被着工程を示す概略的
な斜視図、第３図（Ｂ）は第３図（Ａ）のｃ−ｃ線にお
ける断面図、第４図（Ａ）は上記磁性膜のパターニング
工程を示す概略的な斜視図、第４図（Ｂ）は第４図
（Ａ）のｄ−ｄ線における断面図、第５図は保護板の融
着工程を示す断面図である。 １……下部磁性基板 2,4……絶縁膜 ３……導体薄膜 ８……上部磁性膜 Ｌ……短波長レーザ光1 to 5 show a method of manufacturing a thin film magnetic head according to the present invention in the order of steps thereof, and FIG. 1 (A) is a schematic perspective view showing a step of depositing a first insulating film, 1 (B) is a cross-sectional view taken along the line aa in FIG. 1 (A),
2 (A) is a schematic perspective view showing a conductor thin film forming step, FIG. 2 (B) is a sectional view taken along line bb of FIG. 2 (A), and FIG. 3 (A) is an upper magnetic field. 3B is a schematic perspective view showing a film deposition step, FIG. 3B is a sectional view taken along line cc of FIG. 3A, and FIG. 4A is a schematic view showing the patterning step of the magnetic film. 4B is a cross-sectional view taken along the line d-d of FIG. 4A, and FIG. 5 is a cross-sectional view showing the step of fusing the protective plate. 1 ... Lower magnetic substrate 2,4 ... Insulating film 3 ... Conductor thin film 8 ... Upper magnetic film L ... Short wavelength laser light
Claims (1)
体薄膜や上部磁性膜、絶縁膜を積層形成して薄膜磁気ヘ
ッドを製造するに際し、上記導体薄膜および／または上
部磁性膜をビームの断面形状が直線状になるように絞っ
た波長100〜400nmの短波長レーザ光により所定のパター
ン形状に加工することを特徴とする薄膜磁気ヘッドの製
造方法。1. When manufacturing a thin film magnetic head by laminating a conductive thin film, an upper magnetic film, and an insulating film having a predetermined pattern on a lower magnetic substrate, the conductive thin film and / or the upper magnetic film are cross-sectioned in a beam. A method of manufacturing a thin-film magnetic head, characterized by processing into a predetermined pattern shape with a short-wavelength laser light having a wavelength of 100 to 400 nm which is narrowed so that the shape is linear.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030021A JPH0664712B2 (en) | 1985-02-18 | 1985-02-18 | Method of manufacturing thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030021A JPH0664712B2 (en) | 1985-02-18 | 1985-02-18 | Method of manufacturing thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188713A JPS61188713A (en) | 1986-08-22 |
| JPH0664712B2 true JPH0664712B2 (en) | 1994-08-22 |
Family
ID=12292178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60030021A Expired - Lifetime JPH0664712B2 (en) | 1985-02-18 | 1985-02-18 | Method of manufacturing thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0664712B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4877480A (en) * | 1986-08-08 | 1989-10-31 | Digital Equipment Corporation | Lithographic technique using laser for fabrication of electronic components and the like |
| US4985985A (en) * | 1987-07-01 | 1991-01-22 | Digital Equipment Corporation | Solenoidal thin film read/write head for computer mass storage device and method of making same |
| US5221422A (en) * | 1988-06-06 | 1993-06-22 | Digital Equipment Corporation | Lithographic technique using laser scanning for fabrication of electronic components and the like |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5880116A (en) * | 1981-11-04 | 1983-05-14 | Hitachi Ltd | Thin film wiring magnetic head chip |
-
1985
- 1985-02-18 JP JP60030021A patent/JPH0664712B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61188713A (en) | 1986-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |